ISHIDA Shuichi 石田修一

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ISHIDA Shuuichi 石田修一

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Researcher Number	70127182
Other IDs
Affiliation (based on the past Project Information) *help	2014: 山口投稿理科大学, 工学部, 嘱託教授 2012 – 2014: 山口東京理科大学, 工学部, 嘱託教授 1988 – 1989: Yamaguchi Junior College, Science University of Tokyo Professor, 山口短期大学, 教授 1986 – 1987: 大阪大学, 理学部, 教務職員
Review Section/Research Field	Except Principal Investigator Thin film/Surface and interfacial physical properties / Applied materials / 固体物性
Keywords	Except Principal Investigator 量子井戸 / キャリア密度 / 移動度 / バンド構造 / バンドダイアグラム / InSb / InAsSb / 分子線エピタキシー / ホールセンサ / スピン軌道相互作用 … More / スピンポンピング / バンドアライメント / ホールセンサー / ナノメートル加工 / メゾスコピック現象 / アハラノフ / ボーム効果 / 量子干渉効果 / 電子波エレクトロニクス / アハラノフ・ボーム効果 / 弱局在効果 / 磁気抵抗効果 / Nanofabrication / Mesoscopic Phenomena / Aharanov-Bohm Effect / Quantum Interference Effect / メゾスコピック / 超伝導 / バリステック伝導 / アハラノフ・ボ-ム効果 / アンダ-ソン局在 / シュブニコフ・ド・ハ-ス効果 / 極微細線、リング / GaAs@AlGaAsヘテロ構造 / 極微細線 / 非局所的伝導率 / ジュブニコフ・ド・ハ-ス効果 / アハラノフーボーム効果 / アンダーソン局在 / プラチナ・シリサイド / GaAs / GaAlAsヘテロ構造 / Mesoscopic / Quantum Wire / Ballistic Transport / Superconductivity / Anderson Localization / Shubnikov-de Haas Effect / Aharonov-Bohm Effect / GaAs-AlGaAs Heterostructure Less

Transport and spin properties in narrow gap compound semiconductors
- Principal Investigator
  
  MANAGO Takashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Fukuoka University
Investigation of Quantum Conductance Fluctuation in Mesoscopic Structure of Degenerate Semiconductor
- Principal Investigator
  
  MURASE Kazuo
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  固体物性
- Research Institution
  Osaka University
Study on Nanofabrication and One-Dimensional Quantum Effects
- Principal Investigator
  
  GAMO Kenji
- Project Period (FY)
  1986 – 1988
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  Osaka University,

All 2015 2013 Other

All Journal Article Presentation

[Journal Article] Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE2015
- Author(s)
  I Shibasaki, S. Ishida, H. Geka, T. Manago
- Journal Title
  
  J. Crystal Growth
  
  Volume: 415
- DOI
  10.1016/j.jcrysgro.2015.02.072
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560034
[Journal Article] Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells2015
- Author(s)
  T. Manago, S. Ishida, H. Geka, I Shibasaki
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 117
- DOI
  10.1063/1.4907806
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560034
[Journal Article] 超高感度磁気センサーのためのInSb系量子井戸の研究2013
- Author(s)
  柴崎一郎、眞砂卓史、石田修一、外賀寛崇
- Journal Title
  
  電気学会フィジカルセンサ研究会資料
  
  Volume: PHS-13 Pages: 23-25
- NAID
  10031193597
- Data Source
  KAKENHI-PROJECT-24560034
[Presentation] Comparative Study of Transport Properties in AlInSb/InSb and AlInSb/InAsSb Quantum Wells2013
- Author(s)
  T. Manago, S. Ishida, H. Geka, I. Shibasaki
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE17)
- Place of Presentation
  Warsaw
- Data Source
  KAKENHI-PROJECT-24560034
[Presentation] 超高感度磁気センサーのためのInSb系量子井戸の研究2013
- Author(s)
  柴崎一郎、眞砂卓史、石田修一、外賀寛崇
- Organizer
  フィジカルセンサ研究会
- Place of Presentation
  東京工科大学
- Data Source
  KAKENHI-PROJECT-24560034
[Presentation] InSbおよびInAsSb量子井戸のバンドダイアグラムの検討2013
- Author(s)
  眞砂卓史、石田修一、外賀寛崇、柴崎一郎
- Organizer
  第74回応用物理学関係連合講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560034
[Presentation] Mobility Improvement at Low Temperature by Intentionally Doping in InSb/AlInSb Quantum Wells
- Author(s)
  T. Manago, S. Ishida, H. Geka, I. Shibasaki
- Organizer
  International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2014)
- Place of Presentation
  Savannah, USA
- Year and Date
  2014-08-03 – 2014-08-08
- Data Source
  KAKENHI-PROJECT-24560034
[Presentation] Low temperature transport property of the InSb and InAsSb quantum wells with AlInSb Barrier layers grown by MBE
- Author(s)
  I. Shibasaki, S. Ishida, H. Geka, T. Manago
- Organizer
  The 18th International Conference on Molecular Beam Epitaxy (MBE 2014)
- Place of Presentation
  Arizona, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-24560034
[Presentation] InSb量子井戸における電気伝導性のAs置換効果
- Author(s)
  眞砂卓史、石田修一、外賀寛崇、柴崎一郎
- Organizer
  九州表面・真空研究会
- Place of Presentation
  福岡大学
- Invited
- Data Source
  KAKENHI-PROJECT-24560034

1. GAMO Kenji (70029445)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. MANAGO Takashi (50358058)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
3. SHIBASAKI Ichiro (10557250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
4. YUBA Yoshihiko (30144447)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. TAKAI Mikio (90142306)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. MURASE Kazuo (50028164)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. TAKAOKA Sadao (50135654)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ISHIDA Shuichi 石田 修一

ISHIDA Shuuichi 石田 修一

Research Projects

Research Products

Co-Researchers

Transport and spin properties in narrow gap compound semiconductors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Investigation of Quantum Conductance Fluctuation in Mesoscopic Structure of Degenerate Semiconductor

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on Nanofabrication and One-Dimensional Quantum Effects

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 超高感度磁気センサーのためのInSb系量子井戸の研究2013

Author(s)

Journal Title

NAID

Data Source

[Presentation] Comparative Study of Transport Properties in AlInSb/InSb and AlInSb/InAsSb Quantum Wells2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] 超高感度磁気センサーのためのInSb系量子井戸の研究2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] InSbおよびInAsSb量子井戸のバンドダイアグラムの検討2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Mobility Improvement at Low Temperature by Intentionally Doping in InSb/AlInSb Quantum Wells

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Low temperature transport property of the InSb and InAsSb quantum wells with AlInSb Barrier layers grown by MBE

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] InSb量子井戸における電気伝導性のAs置換効果

Author(s)

Organizer

Place of Presentation

Data Source

ISHIDA Shuichi 石田修一

ISHIDA Shuuichi 石田修一