HASEGAWA Fumio 長谷川文夫

… Alternative Names

長谷川文夫ハセガワフミオ

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Researcher Number	70143170
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2009 – 2010: 工学院大学, 工学部, 教授 2005 – 2007: 工学院大学, 工学部, 教授 1999 – 2003: University of Tsukuba, Institute of Applied Physics, Professor, 物理工学系, 教授 1997 – 1998: 筑波大学, 物質工学系, 教授 1988 – 1993: 筑波大学, 物質工学系, 教授 1986 – 1987: 筑波大学, 物質工学系, 助教授 1985: 筑波大学, 物質工, 助教授
Review Section/Research Field	Principal Investigator Applied materials / 電子材料工学 / Electronic materials/Electric materials / Applied materials science/Crystal engineering / 電子デバイス・機器工学 Except Principal Investigator Applied materials science/Crystal engineering / Electron device/Electronic equipment / Science and Engineering / Electronic materials/Electric materials
Keywords	Principal Investigator AlGaAs / 分子線エピタキシ- / 三塩化物 / GaAs / 塩化物法 / シリサイド / 原子層エピタキシー / ALE / 気相成長 / MBE … More / β-FeSi_2 / ジャ-マナイド / 赤外イメ-ジセンサ- / 結晶成長機構 / AlAs / 化合物半導体 / ダブルヘテロ構造 / MOMBE / Si-MBE / SiGe / PtSi / HBO_2 / 分子線エピタキシー / 鉄シリサイド / 移動度 / 太陽電池 / GaN / HVPE / BaSi_2 / Si_<1-x>Gex / Si_<1ーx>Ge_x / 原子層エピタキシ- / 生長機構 / 混晶半導体 / AlN / AlAsN / プラズマCVD / クロライドVPE / 原子層エピキタシ- / 塩化物気相成長 / クロライド法 / ヘテロ構造 / ヘテロエピタキシ- / エビタキシャル成長 / ヘテロ接合 / 塩化物気相成長法 / ホトルミネッセンス / SAセンター / 有機金属 / カーボン汚染 / クラッキング / ディメチルアミンガラン / 水素化物 / カ-ボン汚染 / Molecular Beam Epitaxy / Organo-Metallic Compound / Carbon Contamination / Cracking / Dimethylamine Gallan / Hydride / 歪超格子 / サーファクタント / 表面偏析 / HB0_2 / Si / Ge歪超格子 / B吸着 / 超格子 / 金属・半導体接触 / Super Lattice / Surfactant / Segregation / 発光ダイオード / 赤外線 / 光配線 / フォトルミネッセンス / エレクトロルミネッセンス / シリコン / 光接続 / 凝集 / IC / light-emitting diode / mobility / infrared / optical interconnection / GaN基板 / バルクGaN / GaAs基板 / 紫外レーザ / ハライド気相成長 / 青色レーザ・ダイオード / 六方晶GaN / ナイトライド / 立方晶GaN / 青色レーザー・ダイオード / 厚膜エピタキシャル成長 / bulk GaN / GaAs substrate / free standing GaN / halide vapor phase epitaxy / ultra violet laser diode / MBE成長 / 伝導型制御 / エネルギー・バンド構造 / エネルギーバンド構造 / 多層膜法 / 同時蒸着法 / solar battery / silicide / beta-FeSi2 / MBE growth / control of conduction type / energy band structure … More Except Principal Investigator 鉄シリサイド / 希薄磁性半導体 / 磁気輸送特性 / 異常ホール効果 / SQUID / シリコン / 窒化物半導体 / 深紫外半導体レーザ / 量子井戸 / ワイドギャップ / エピタキシャル成長 / クロライド法 / 負の磁気抵抗 / オーミックコンタクト / Mn / 移動度 / アニ-ル / 多層膜 / 半導体シリサイド / BaSi_2 / 分子線エピタキシー / 熱反応堆積法 / 分子線エピタキシー法 / 半導体レーザ / 深紫外域 / 量子井戸構造 / 超格子 / 窒化物半導体' / ワイドギヤツプ / 深紫外 / 室化物半導体 / 光学異方性 / 発振モード / p型不純物 / 炭素 / AlGaN / 交互供給法 / p型半導体 / ドーピング材料 / エピタキシル成長 / 歪み制御 / バッフア層 / バッファ層 / エビタキシャル成長 / 有効質量 / ホット・ルミネッセンス / 表面準位密度 / レーザーCVD / 欠陥分布 / 混晶半導体表面安定化 / 広バンド・ギャップ化合物半導体 / 表面保護膜 / 2次元電子ガス / ホット・エレクトロン輸送 / EL2欠陥 / ヘテロ接合界面・表面層原子配列 / フォトルミネッセンス / エレクトロルミネッセンス / 発光ダイオード / 透過型電子顕微鏡 / 電流注入 / Iron disilicide / photoluminescence / light-emitting diode / electroluminescence Less

Growth of High Quality AlGaN and its Application to Deep UV LED and LD
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kogakuin University
Research on Deep-UV Semiconductor Laser Lasing in 205～250nm Region
- Principal Investigator
  
  KAWANISHI Hideo
- Project Period (FY)
  2005 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kogakuin University
アルカリ土類金属を用いた新しいシリコン系半導体の探探
- Principal Investigator
  
  末益崇
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Tsukuba
Investigation of a solar battery using the environmentally friendly semiconductor : beta-FeSi_2Principal Investigator
- Principal Investigator
  
  HASEGAWA Fumio
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tsukuba
Fabrication of Si-based room temperature infrared light-emitting diodes using β-FeSi_2
- Principal Investigator
  
  SUEMASU Takashi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
シリコン系スピン制御半導体の創成と光磁気特性の研究
- Principal Investigator
  
  末益崇
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  University of Tsukuba
シリコン系スピン制御半導体の創成と光磁気特性の研究
- Principal Investigator
  
  末益崇
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  University of Tsukuba
シリコン系スピン制御半導体の創成と光磁気特性の研究
- Principal Investigator
  
  SUEMASU Takashi
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tsukuba
Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystalsPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Fumio
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystalsPrincipal Investigator
- Principal Investigator
  
  HASEGAWA Fumio
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Tsukuba Grant-in-Aid for Scientific Research (B)(2)
塩化物法によるAlGaAs原子層エピタキシーの成長機構Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tsukuba
塩化物法によるAlGaAs原子層エピタキシーの成長機構Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tsukuba
Preparation and properties of Hetero-junctions between PtSi or p-Si and p-Si/Ge strained superlatticePrincipal Investigator
- Principal Investigator
  
  HASEGAWA Fumio
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  University of Tsukuba
塩化物法によるAlGaAs原子層エピタキシ-の成長機構Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tsukuba
金属シリサイド/pーSi_<1ーx>Ge_x界面の作製とその制御Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tsukuba
Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.Principal Investigator
- Principal Investigator
  
  HASEGAWA Fumio
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  University of Tsukuba
金属シリサイド/p-Si_<1-x>Gex界面の作製とその制御Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Tsukuba
塩化物法によるAlGaAsの原子層エピタキシ-Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  University of Tsukuba
金属Alを用いたAlGaAs/GaAsヘテロ構造・クロライド気相成長法の開発Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  Applied materials
- Research Institution
  University of Tsukuba
混晶の物性とその制御・設計に関する研究
- Principal Investigator
  
  犬石嘉雄
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Special Project Research
- Research Institution
  Kinki University
混晶の物性とその制御・設計に関する研究
- Principal Investigator
  
  犬石嘉雄
- Project Period (FY)
  1986
- Research Category
  
  Grant-in-Aid for Special Project Research
- Research Institution
  Kinki University
高エネルギー,ギャップ混晶半導体の成長と物性Principal Investigator
- Principal Investigator
  
  長谷川文夫
- Project Period (FY)
  1985
- Research Category
  
  Grant-in-Aid for Special Project Research
- Research Institution
  University of Tsukuba

All 2008 2007 2006 2002 2001 2000 Other

All Journal Article Presentation Book

[Book] Mechanical and Thermal Properties of Wide Semiconductors(Wide Bandgap Semiconductor(2.2.4節及び6.2.8節を分担))2007
- Author(s)
  Takahashi, Yoshikawa, Hasegawa
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069009
[Book] Wide Bandgap Semiconductor(Mechanical and Thermal Properties of Wide Semiconductors)2007
- Author(s)
  Takahashi, Yoshikawa, Hasegawa
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-17106005
[Book] ワイドギャップ半導体光・電子デバイス((2.2.4節)(及び5.2.7節を分担))2006
- Author(s)
  高橋、吉川、長谷川
- Publisher
  共立出版
- Data Source
  KAKENHI-PLANNED-18069009
[Book] ワイドギャップ半導体光・電子デバイス2006
- Author(s)
  高橋、吉川、長谷川
- Publisher
  共立出版
- Data Source
  KAKENHI-PROJECT-17106005
[Book] ワイドギャップ半導体光・電子デバイス(第二章編集、2.2.4節、5.2.7節執筆)2006
- Author(s)
  監修・高橋清, 編著/長谷川文夫, 吉川昭彦
- Total Pages
  421
- Publisher
  森北出版
- Data Source
  KAKENHI-PLANNED-18069009
[Book] ワイドキャップ半導体光・電子デバイス(第二章編集、2.2.4節、5.2.7節執筆)2006
- Author(s)
  監修・高橋清, 編著/長谷川文夫, 吉川昭彦
- Total Pages
  421
- Publisher
  森北出版
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Investigation on Conductivity at the Gan/ATN/SiC Subsrate interface for Vertical Nitraide Power FETs2008
- Author(s)
  Yuu Wakamiya, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Physics Status Solidi, (C) No.6
  
  Pages: 1505-1507
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Investigation on Conductivity at the Gan/AIN/SiC Subsrate interface for Vertical2008
- Author(s)
  Yuu Wakamiya, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Physica Status Solidi No.6
  
  Pages: 1505-1507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy2007
- Author(s)
  Ken-ichi Isono, Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan J.Appl.Phys. Vol.46, No.9A
  
  Pages: 5711-5714
- NAID
  40015602574
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Koichiro Murakawa, EIichiro Nikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46・6A(掲載確定、ページ未定)
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 345-345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN Yuu Wakamiya*, Fumio Hasegawa, /GaN) Multi-buffer-layer Structure2007
- Author(s)
  Kouichi Murakawa*, Eiichiro Niikura, Fumio Hasegawa, and Hideo Kawanishi
- Journal Title
  
  Japan.J.Appl.Phys. Vol.46
  
  Pages: 3301-3304
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Kouichi Murakawa, Eiichiro Niikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan.J.Appl.Phys. Vol.46, No.6A
  
  Pages: 3301-3304
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] I mprovement of crystal quality of AIN and AiGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  E.Niikura, K.Murakawa, F.Hasegawa, H.Kawanishi
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 345-348
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Kouichi Murakawa, Eiichiro Niikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46,No.6A
  
  Pages: 3301-3304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Koichiro Murakawa, EIichiro Nikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46・6A(掲載確定、ページ未定)
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] I mprovement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  E.Niikura, K.Murakawa, F.Hasegawa, H.Kawanishi
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 345-348
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  Eiichiro Niikura*, Kouichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 345-348
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Improvement of crystal quality of AIN and AlGaN epitaxial layers by controlling the strain with the (AIN/GaN) multi-buffer layer2007
- Author(s)
  Eiichiro Niikura, Kouichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 345-348
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Reduction of Threading Dislocations in AlGaN/AIN/SiC Epitaxial Layers by Controlled Strain with (AIN/GaN) Multibuffer-layer Structure2007
- Author(s)
  Kouichiro Murakawa, Eiichiro Nikura, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Japan. J. Appl. Phys 46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17106005
[Journal Article] Improvement of Crystal Quality of n-AlGaN by Alternate-Source-Feeding Metal Organic Vapor Phase Epitaxy2007
- Author(s)
  Ken-ichi Isono*, Eiichiro Niikura, Koichi Murakawa, Fumio Hasegawa, and Hideo Kawanishi
- Journal Title
  
  Japan J. Appl. Phys. Vol.46
  
  Pages: 5711-5714
- NAID
  40015602574
- Data Source
  KAKENHI-PLANNED-18069009
[Journal Article] Investigation of the energy band structure of orthorhombic BaSi_2 by optical and electrical measurements and theoretical calculations.2002
- Author(s)
  T.Nakamura, T.Suemasu, K.Takakura, F.Hasegawa
- Journal Title
  
  Applied Physics Letters Vol.81, No.6
  
  Pages: 1032-1034
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Journal Article] Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi_2 films grown by molecular-beam epitaxy.2002
- Author(s)
  K.Takakura, N.Hiroi, T.Suemasu, S.F.Chichibu, F.Hasegawa
- Journal Title
  
  Applied Physics Letters Vol.80, No.4
  
  Pages: 556-558
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Journal Article] Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi_2 on light emission from p-Si/β-FeSi_2 particles/n-Si light-emitting diodes.2001
- Author(s)
  T.Suemasu, Y.Negishi, K.Takakura, F.Hasegawa
- Journal Title
  
  Applied Physics Letters Vol.79, No.12
  
  Pages: 1804-1806
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Journal Article] Donor and Acceptor Levels in Undoped 8-FeSi2 Films Grown on Si(001) Substrates.2001
- Author(s)
  K.Takakura, T.Suemasu, F.Hasegawa
- Journal Title
  
  Japanese Journal of Applied Physics Vol.40, No.38
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Journal Article] 鉄シリサイドβ-FeSi_2を活性領域とするSi系LEDの室温発光2001
- Author(s)
  長谷川文夫
- Journal Title
  
  真空ジャーナル 75号
  
  Pages: 5-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-12555084
[Journal Article] Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios.2000
- Author(s)
  K.Takakura, T.Sueamsu, Y.Ikura, F.Hasegawa
- Journal Title
  
  Japanese Journal of Applied Physics Vol.39, No.8A
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Journal Article] Improvement of the Electrical Properties of 8-FeSi_2 Films on Si(001) by High-Temperature Annealing.2000
- Author(s)
  K.Takakura, T.Suemasu, N.Hiroi, F.Hasegawa
- Journal Title
  
  Japanese Journal of Applied Physics Vol.39, No.3A/B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Journal Article] Invesigation on Conductivity at the Gan/AIN/SiC Subsrate interface for Vertical Nitraide Power FETs
- Author(s)
  Yuu Wakamiya*, Fumio Hasegawa, Hideo Kawanishi
- Journal Title
  
  Physica Status Solidi (to be published)
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] Crystal quality control of AlN template grown on SiC substrate using (AlN/GaN) multi-buffer layer and alternate source-Feeding Mo-VPE2008
- Author(s)
  Hideo Kawanishi, Tomohito Takeda, Yusuke Tsutagawa, Fumio Hasegawa
- Organizer
  2nd International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Shuzenji, Shizuoka, Japan
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Crystal quality control of AlN template grown on SiC substrate using (AlN/GaN) multi-buffer layer and alternate source-Feeding Mo-VPE2008
- Author(s)
  Hideo Kawanishi, Tomohito Takeda, Yusuke Tsutagawa, Fumio Hasegawa
- Organizer
  2^<nd> International Symposium on Growth of III-Nitrides (ISGN-2), Mo-49
- Place of Presentation
  Shuzenji, Shizuoka, Japan
- Data Source
  KAKENHI-PLANNED-18069009
[Presentation] 7th International Conference of Nitride semiconductors, MP322007
- Author(s)
  Eiichiro Niikura, Koichi Murakawa, Shoichiro Takeda, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  MP32, MGM Grand Hotel, Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Reduction of Point Defects in N-AlGaN by an Altenate Source Feeding Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  Kenichi Isono, Eiichiro Niikura, Kouichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  he 3rd Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  PO-13, Jeoniju Core Riviera hotel, Jeonju, Korea
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Reduction of Threading Dislocations in AlGan/AIN/SiC Epitxial Layers by Tensile Strain in a-Axis Induced with the (AIN/GaN) Multi-Buffer-Layer2007
- Author(s)
  Kouichi Murakawa, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  MP29, MGM Grand Hotel, Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-17106005
[Presentation] Dislocation Reduction in AIN Template grown on SiC by Tensile Strain induced by (AIN/GaN) Multi-Buffer-Layer2007
- Author(s)
  Kouichi Murakawa, Eiichiro Niikura, Fumio Hasegawa, Hideo Kawanishi
- Organizer
  The 3rd Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  PO-9, Jeoniju Core Riviera hotel, Jeonju, Korea
- Data Source
  KAKENHI-PROJECT-17106005

1. SUEMASU Takashi (40282339)

# of Collaborated Projects: 8 results

# of Collaborated Products: 5 results
2. SHIGEKAWA Hidemi (20134489)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. HONDA Tooru (20251671)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. KAWANISHI Hideo (70016658)

# of Collaborated Projects: 2 results

# of Collaborated Products: 22 results
5. 井上正嵩 (20029325)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. 犬石嘉雄 (90028902)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. 白藤純嗣 (70029065)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. 新井夫差子 (10010927)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. 赤崎勇 (20144115)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. SAKAMOTO Tesuo (20313067)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. CHICHIBU Shigefusa (80266907)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
12. 関寿 (70015022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 南日康夫 (10133026)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SAKAMOTO Kunihiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. USUI Akira

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 村井重夫

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

HASEGAWA Fumio 長谷川 文夫

長谷川 文夫 ハセガワ フミオ

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Investigation of a solar battery using the environmentally friendly semiconductor : beta-FeSi_2Principal Investigator

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Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystalsPrincipal Investigator

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Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystalsPrincipal Investigator

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塩化物法によるAlGaAs原子層エピタキシーの成長機構Principal Investigator

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塩化物法によるAlGaAs原子層エピタキシーの成長機構Principal Investigator

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Preparation and properties of Hetero-junctions between PtSi or p-Si and p-Si/Ge strained superlatticePrincipal Investigator

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塩化物法によるAlGaAs原子層エピタキシ-の成長機構Principal Investigator

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金属シリサイド/pーSi_<1ーx>Ge_x界面の作製とその制御Principal Investigator

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HASEGAWA Fumio 長谷川文夫

長谷川文夫ハセガワフミオ