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nakashima hiroshi  中島 寛

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NAKASHIMA HIROSHI  中島 寛

NAKASHIMA Hiroshi  中島 寛

中島 寛

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Researcher Number 70172301
Other IDs
External Links
Affiliation (Current) 2022: 佐世保工業高等専門学校, その他, 校長
Affiliation (based on the past Project Information) *help 2016 – 2019: 九州大学, グローバルイノベーションセンター, 教授
2013 – 2016: 九州大学, 産学連携センター, 教授
2003 – 2011: Kyushu University, Art, Science and Technology Center for Cooperative Research, Professor, 産学連携センター, 教授
2001 – 2002: 九州大学, 先端科学技術共同研究センター, 教授
1995 – 1998: 九州大学, 先端科学技術共同研究センター, 助教授
1994: 九州大学, 先端科学技術共同研究所センター, 助教授
1988: 九州大学, 工学部, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Science and Engineering / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Applied materials science/Crystal engineering
Except Principal Investigator
Electronic materials/Electric materials
Keywords
Principal Investigator
シリコン / 絶縁膜 / Silicon / 高誘電率絶縁膜 / Ge / チャネル / GOI / 結晶性 / 電子・電気材料 / スパッタリング … More / 酸化膜 / 窒化膜 / 電子サイクロトロン共鳴プラズマ / 省電力LSI / Hf酸化膜 / High permittivity insulating film / TaN / 介面準位 / DLTS / Ge-MOS / Ge構造 / 界面準位 / SGOI / 結晶欠陥 / 半導体物性 / 結晶工学 / 先端機能デバイス / Ge半導体 / 高性能デバイス / 電子材料 / 金属/半導体コンタクト / 界面 / 低電子障壁 / Si, SiC / パワーデバイス / Si / SiC / SOI(Silicon on Insulator) / 欠陥 / 接合過渡電流法 / 電流DLTS / SOI(Silicon on lnsulator) / SOI (Silicon on Insulator) / Defects / Juncution Current Spectroscopy / Current DLTS / 極薄絶縁膜 / ECRプラズマ / 低温形成 / 電気的機能性 / 低温薄膜形成 / SILICON / VERY THIN FILM / ECR PLASMA / LOW TEMPERATURE FORMATION OF THIN FILM / ELECTRICAL FUNCTIONALITY / SPUTTERING / 電子サイクロトロンプラズマ / 積層構造 / 電子サイクロトロンプ共鳴ラズマ / electron cyclotron resonance plasma / Sputtering / high permittivity insulating film / silicon oxide film / sislicon nitride film / stack structure / High-k膜 / Electron cyclotron resonance plasma / High-k film / Silicon oxide film / Low consumption LSI / Hf Oxide Film / HF酸化膜 / メタルゲート / 仕事関数 / 省電カLSI / silicon / Electron cyclotron resonance / Low-power-consumption LSI / Hf oxide / Metal gate / Effective work function … More
Except Principal Investigator
金属/半導体コンタクト / Ge-光素子 / 局所歪み / Ge光素子 / Siフォトニクス / CMOS / 電子・電気材料 / 電子密度 / GOI / 局所歪 / プラズマCVD / アモルファスシリコン膜 / シランガス / 矩形波振幅変調高周波放電 / ラジカル種の寿命 / Ge-On-Insulator / Ge/絶縁膜界面 / 横方向発光・受光 / チップ内光配線 / 金属/半導体コンタクト Less
  • Research Projects

    (13 results)
  • Research Products

    (327 results)
  • Co-Researchers

    (15 People)
  •  Performance enhancement for Ge optical devices by applying local strain to Ge-On-Insulator substrates

    • Principal Investigator
      Wang Dong
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices

    • Principal Investigator
      Wang Dong
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  Development of basic technology for achievement of metal source/drain Ge-CMOS devicePrincipal Investigator

    • Principal Investigator
      NAKASHIMA HIROSHI
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  creation of contacts with ultralow electron barrier height by nano structure control of metal-nitride/group-IV semiconductor interfacesPrincipal Investigator

    • Principal Investigator
      NAKASHIMA HIROSHI
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Kyushu University
  •  Formation of Strained Ge Channel and Material Evaluation for High performance ULSIPrincipal Investigator

    • Principal Investigator
      NAKASHIMA Hiroshi
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  絶縁膜上のGeチャネルに於ける結晶・界面の総合評価Principal Investigator

    • Principal Investigator
      中島 寛
    • Project Period (FY)
      2008 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Kyushu University
  •  絶縁膜上のGeチャネルに於ける結晶・界面の総合評価Principal Investigator

    • Principal Investigator
      中島 寛
    • Project Period (FY)
      2007
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Kyushu University
  •  Establishment of scaling technique of high-k gate dielectrics for low-power-consumption LSIPrincipal Investigator

    • Principal Investigator
      NAKASHIMA Hiroshi
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  Development of Self Aligned Fabrication Process of High-Permittivity Gate Insulating Film for Low Consumption LSIPrincipal Investigator

    • Principal Investigator
      NAKASHIMA Hiroshi
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYUSHU UNIVERSITY
  •  Low Temperature Fabrication of High-Permittivity Gate Insulating Film and Its Functional Evaluation for Next Generation LSI.Principal Investigator

    • Principal Investigator
      NAKASHIMA Hiroshi
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  STUDY ON LOW TEMPERATURE FORMATION OF VERY THIN AND HIGH-QUALITY Si-BASED INSULATING FILMS AND ITS FUNCTIONAL EVALUATIONPrincipal Investigator

    • Principal Investigator
      NAKASHIMA Hiroshi
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYUSHU UNIVERSITY
  •  Evaluation of Defects in Crystal Silicon Film with SOI (Silicon on Insulator) StructurePrincipal Investigator

    • Principal Investigator
      NAKASHIMA Hiroshi
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      KYUSHU UNIVERSITY
  •  パルス放電希ガス希釈プロセシングプラズマの反応促進機構の解明と応用に関する研究

    • Principal Investigator
      渡辺 征夫
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyushu University

All 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

  • [Journal Article] High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis2020

    • Author(s)
      Oka Ryusei、Yamamoto Keisuke、Akamine Hiroshi、Wang Dong、Nakashima Hiroshi、Hishiki Shigeomi、Kawamura Keisuke
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59

    • DOI

      10.35848/1347-4065/ab6862

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18KK0134, KAKENHI-PROJECT-17H03237
  • [Journal Article] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019

    • Author(s)
      Keisuke Yamamoto, Kohei Nakae, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Md. M Alam, Kentarou Sawano, Zhongying Xue, Miao Zhang, Zengfeng Di
    • Journal Title

      The Electrochemical Society Transactions

      Volume: 93 Pages: 73-77

    • DOI

      10.1149/09301.0073ecst

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
  • [Journal Article] Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate2019

    • Author(s)
      Maekrua Takayuki、Goto Taiki、Nakae Kohei、Yamamoto Keisuke、Nakashima Hiroshi、Wang Dong
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SB Pages: SBBE05-SBBE05

    • DOI

      10.7567/1347-4065/aafb5e

    • NAID

      210000135344

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Journal Article] (Keynote) Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
    • Journal Title

      The Electrochemical Society Transactions

      Volume: 92 Pages: 3-10

    • DOI

      10.1149/09204.0003ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
  • [Journal Article] Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation2019

    • Author(s)
      Yamamoto Keisuke、Nakae Kohei、Wang Dong、Nakashima Hiroshi、Xue Zhongying、Zhang Miao、Di Zengfeng
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SB Pages: SBBA14-SBBA14

    • DOI

      10.7567/1347-4065/ab02e3

    • NAID

      210000155626

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Journal Article] Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy2018

    • Author(s)
      Wen Wei-Chen、Yamamoto Keisuke、Wang Dong、Nakashima Hiroshi
    • Journal Title

      Journal of Applied Physics

      Volume: 124

    • DOI

      10.1063/1.5055291

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Journal Article] Wide range control of Schottky barrier heights at metal/Ge interfaces with nitrogen-contained amorphous interlayers formed during ZrN sputter deposition2018

    • Author(s)
      Yamamoto K、Noguchi R、Mitsuhara M、Nishida M、Hara T、Wang D、Nakashima H
    • Journal Title

      Semiconductor Science and Technology

      Volume: 33

    • DOI

      10.1088/1361-6641/aae4bd

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Journal Article] (Invited) Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer2017

    • Author(s)
      Nakashima Hiroshi、Okamoto Hayato、Yamamoto Keisuke、Wang Dong
    • Journal Title

      ECS transactions

      Volume: 80 Pages: 97-106

    • DOI

      10.1149/08004.0097ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Journal Article] Electrical properties of epitaxial Lu- or Y-doped La 2 O 3 /La 2 O 3 /Ge high- k gate-stacks2017

    • Author(s)
      T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, and K. Hamaya
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: - Pages: 260-264

    • DOI

      10.1016/j.mssp.2016.11.016

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289090, KAKENHI-PROJECT-16H02333
  • [Journal Article] Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes2017

    • Author(s)
      Maekura T、Tanaka K、Motoyama C、Yoneda R、Yamamoto K、Nakashima H、Wang D
    • Journal Title

      Semiconductor Science and Technology

      Volume: 32

    • DOI

      10.1088/1361-6641/aa827f

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Journal Article] Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure2017

    • Author(s)
      Y. Nagatomi, T. Tateyama, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      Semiconductor Science and Technology

      Volume: 32

    • DOI

      10.1088/1361-6641/32/3/035001

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016

    • Author(s)
      T. Maekura, K. Yamamoto, H. Nakashima, and D. Wang
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55(4S) Issue: 4S Pages: 04EH08-04EH08

    • DOI

      10.7567/jjap.55.04eh08

    • NAID

      210000146355

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Direct band gap light emission and detection at roomtemperature in bulk germanium diodes with HfGe/Ge/TiN structure2016

    • Author(s)
      D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: 602 Pages: 43-47

    • DOI

      10.1016/j.tsf.2015.09.074

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack2016

    • Author(s)
      Y. Nagatomi, T. Tateyama, S. Tanaka, W.-C. Wen, T. Sakaguchi, K. Yamamoto, L. Zhao, D. Wang, and H. Nakashima
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: -

    • DOI

      10.1016/j.mssp.2016.11.014

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction2016

    • Author(s)
      K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: -

    • DOI

      10.1016/j.mssp.2016.09.024

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015

    • Author(s)
      S. Tanaka, Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015)

      Volume: なし Pages: 28-29

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Journal Article] Electrical properties of pseudo-single-crystalline germanium thin-film-transistor fabricated on glass substrates2015

    • Author(s)
      K. Kasahara, Y. Nagatomi, K. Yamamoto, H. Higashi, M. Nakano, S. Yamada, D. Wang, H. Nakashima, and K. Hamaya
    • Journal Title

      Applied Physics Letters

      Volume: 107

    • DOI

      10.1063/1.4932376

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246020, KAKENHI-PROJECT-25249035
  • [Journal Article] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure2015

    • Author(s)
      D. Wang, T. Maekura, S. Kamezawa, K. Yamamoto, and H. Nakashima
    • Journal Title

      Applied Physics Letters

      Volume: 106(7)

    • DOI

      10.1063/1.4913261

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/MetalDdiodes2015

    • Author(s)
      T. Maekura, D. Wang, K. Yamamoto, and H. Nakashima
    • Journal Title

      Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM2015)

      Volume: なし Pages: 606-607

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Journal Article] Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge2015

    • Author(s)
      K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
    • Journal Title

      Journal of Applied Physics

      Volume: 118(11)

    • DOI

      10.1063/1.4930573

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Journal Title

      ECS Transactions

      Volume: 69(10) Pages: 55-66

    • DOI

      10.1149/06910.0055ecst

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs2015

    • Author(s)
      Y. Nagatomi, S. Tanaka, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54(7) Issue: 7 Pages: 070306-070306

    • DOI

      10.7567/jjap.54.070306

    • NAID

      210000145332

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Journal Title

      Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)

      Volume: なし Pages: 10-11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
    • Journal Title

      ECS Transactions

      Volume: 64 Pages: 261-266

    • DOI

      10.1149/06406.0261ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
  • [Journal Article] Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method2014

    • Author(s)
      D. Wang, Y. Nagatomi, S. Kojima, K. Yamamoto, H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: 557 Pages: 288-291

    • DOI

      10.1016/j.tsf.2013.10.065

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
  • [Journal Article] Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height2014

    • Author(s)
      K. Yamamoto, K. Asakawa, D. Wang, and H. Nakashima
    • Journal Title

      The Electrochemical Society Transactions

      Volume: 58 (9) Pages: 53-59

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Journal Article] Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method2014

    • Author(s)
      K. Yamamoto, M. Mitsuhara, K. Hiidome, R. Noguchi, M. Nishida, D. Wang, and H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: 104 Pages: 132109-132109

    • DOI

      10.1063/1.4870510

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
  • [Journal Article] Effect of Kr/O2 ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)

      Volume: なし Pages: 10-11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Journal Article] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      The Electrochemical Society Transactions

      Volume: 64(6) Pages: 261-266

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Journal Article] Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack2013

    • Author(s)
      K. Yamamoto, T. Sada, D. Wang, and H. Nakashima
    • Journal Title

      Applied Physics Letters

      Volume: 103

    • DOI

      10.1063/1.4821546

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Journal Article] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts2013

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Journal Title

      The Electrochemical Society Transactions

      Volume: 58(9) Pages: 167-178

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Journal Article] Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors2012

    • Author(s)
      K.Yamamoto, T.Yamanaka, R.Ueno, K.Hirayama, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Thin Solid Films

      Volume: Vol.520, No.8 Pages: 3382-3386

    • DOI

      10.1016/j.tsf.2011.10.047

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054, KAKENHI-PROJECT-23760017
  • [Journal Article] Ohmic contact formation on n-type Ge by direct deposition of TiN2011

    • Author(s)
      M.Iyota, K.Yamamoto, D.Wang, H.Yang, H.Nakashima
    • Journal Title

      Appl.Phys.Lett

      Volume: Vol.98, No.19

    • DOI

      10.1063/1.3590711

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique2011

    • Author(s)
      H. Yang, D. Wang, H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: Vol.520, No.8 Pages: 3283-3287

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Influence of SiGe layer thickness and Ge fraction on compressive strain and holemobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique2011

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Thin Solid Films

      Volume: Vol.520,No.8 Pages: 3283-3287

    • DOI

      10.1016/j.tsf.2011.10.078

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-09F09271, KAKENHI-PROJECT-21246054
  • [Journal Article] 極薄GeO_2界面層を有するZr系high-k/Geゲートスタック構造の形成2011

    • Author(s)
      平山佳奈、岩村義明、上野隆二、楊海貴、王冬、中島寛
    • Journal Title

      九州大学大学院総合理工学報告

      Volume: 第32巻 Pages: 5-11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO<sub>2</sub>/GeO<sub>2</sub> Bilayer Passivation and Postmetallization Annealing Effect of Al2011

    • Author(s)
      K.Hirayama, R.Ueno, Y.Iwamura, K.Yoshino, D.Wang, H.Yang, H.Nakashima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol.50 Issue: 4S Pages: 04DA10-04DA10

    • DOI

      10.1143/jjap.50.04da10

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al_2O_3 deposition and subsequent post-annealing2011

    • Author(s)
      H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
    • Journal Title

      Solid State Electronics

      Volume: (印刷中)

    • NAID

      120004951622

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2 Bilayer Passivation2011

    • Author(s)
      K.Yamamoto, R.Ueno, T.Yamanaka,K.Hirayama, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Applied Physics Express

      Volume: Vol.4, No.5 Issue: 5 Pages: 051301-051301

    • DOI

      10.1143/apex.4.051301

    • NAID

      10028210109

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054, KAKENHI-PROJECT-23760017
  • [Journal Article] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO_2/GeO_2 Bilayer by Nitrogen Incorporation2011

    • Author(s)
      K.Sakamoto, Y.Iwamura, K.Yamamoto, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011)

      Pages: 885-886

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation2011

    • Author(s)
      H.Nakashima, Y.Iwamura, K.Sakamoto, D.Wang, K.Hirayama, K.Yamamoto, H.Yang
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.98, No.25

    • DOI

      10.1063/1.3601480

    • NAID

      120004979402

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054, KAKENHI-PROJECT-23760017
  • [Journal Article] Effect of Al_2O_3 Deposition and Subsequent Annealing on Passivation of Defectsin Ge-rich SiGe-on-Insulator2011

    • Author(s)
      H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
    • Journal Title

      Key Engineering Material

      Volume: Vol.470 Pages: 79-84

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO_2/GeO_2 bi-layer passivation combined with the subsequent SiO_2-depositions using magnetron sputtering2011

    • Author(s)
      K.Hirayama, K.Yoshino, R.Ueno, Y.Iwamura, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Solid State Electronics

      Volume: (印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate2011

    • Author(s)
      T.Yamanaka, K.Yamamoto, K.Sakamoto, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials (SSDM2011)

      Pages: 889-890

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing2010

    • Author(s)
      H.Yang, M.Iyota, S.Ikeura, D.Wang, H.Nakashima
    • Journal Title

      Applied Physics Express

      Volume: Vol.3 Pages: 71302-3

    • NAID

      10026495131

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Defect evaluation and control of SiGe-on-insulator substrate fabricated by the Gecondensation technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Proceeding of The Forum on the Science and Technology of Silicon Materials 2010

      Pages: 438-448

    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeoO_2 interlayers2010

    • Author(s)
      K.Hirayama, W.Kira, K.Yoshino, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Thin Solid Films Vol.518

      Pages: 2505-2508

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-ThinSiO_2/GeO_2 Bi-Layer Passivation2010

    • Author(s)
      K.Hirayama, R.Ueno, Y.Iwamura, K.Yoshino, D.Wang, H.Yang, H.Nakashima
    • Journal Title

      Extended Abstracts of the 2010 Interational Conference on Solid State Devices and Materials (SSDM2010)

      Pages: 205-206

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Defect characterization and control for Site-on-insulator2010

    • Author(s)
      D.Wang, H.Yang, H.Nakashima
    • Journal Title

      Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)

      Volume: I12_08(Invited) Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO_2 interlayers2010

    • Author(s)
      K.Hirayama, W.Kira, K.Yoshino, H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Thin Solid Films Vol. 518

      Pages: 2505-2508

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima, K.Hiravama, S.Kojima, S.Ikeura
    • Journal Title

      Thin Solid Films Vol. 518

      Pages: 2342-2345

    • NAID

      120005289466

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima, K.Hirayama, S.Kojima, S.Ikeura
    • Journal Title

      Thin Solid Films Vol.518

      Pages: 2342-2345

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3 Deposition and Subsequent Post-Deposition Annealing2010

    • Author(s)
      H. Yang, M. Iyota, S. Ikeura, D. Wang, H. Nakashima
    • Journal Title

      App. Phys. Express

      Volume: Vol.3 Pages: 71302-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Hole-Mobility Enhancement in Ultrathin Strained Si_<0.5>Ge_<0.5>-on-Insulator Fabricated by Ge Condensation Technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Proceeding of 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)

      Volume: O05_06 Pages: 1-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Optical and Electrical Characterization of Defects in SiGe-on-Insulator2009

    • Author(s)
      H.Nakashima, D.Wang, H.Yang
    • Journal Title

      The Electrochemical Society Transactions Vol.25, No.7

      Pages: 99-114

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation techniaue2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Applied Physics Letters Vol. 95, No.12

      Pages: 122103-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Optical and Electrical Characterization of Defects in SiGe-on-Insulator2009

    • Author(s)
      H.Nakashima, D.Wang, H.Yang
    • Journal Title

      The Electrochemical Society Transactions Vol. 25, No.7

      Pages: 99-114

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation2009

    • Author(s)
      D.Wang, H.Nakashima
    • Journal Title

      Solid-State Electronics Vol. 53, No.8

      Pages: 841-849

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Defect-Induced Deep Levels in SiGe-On-Insulator Substrate Fabricated using Ge Condensation Technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials

      Pages: 396-397

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation2009

    • Author(s)
      D.Wang, H.Nakashima
    • Journal Title

      Solid-State Electronics Vol.53, No.8

      Pages: 841-849

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Applied Physics Letters Vol.95, No.12

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Defect-Induced Deep Levels in SiGe-On-Insulator Substrate Fabricated using Ge Condensation Technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Journal Title

      Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials

      Pages: 396-397

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Journal Article] Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge Condensation by dry oxidation2008

    • Author(s)
      H. Nakashima, D. Wang
    • Journal Title

      Abstract of 4^<th> Intemational SiGe Technology and Device Meeting (招待講演)

      Pages: 125-126

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Electrical and Structural Evaluations of Ultrathin SiGe and Ge-on-insulator Fabricated Using Ge Condensation by Dry Oxidation2008

    • Author(s)
      H. Yang, D. Wang, H. Gao, K. Hirayama, K. Ikeda, S. Hata, H. Nakashima, H. Nakashima
    • Journal Title

      Extended Abstracts of the 2008 International ronference on Solid State Devices and Materials

      Pages: 438-439

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Dependences of effective work functions of TaN on HfO_2 and SiO_2 on post-metallization anneal2008

    • Author(s)
      Y. Sugimoto, K. Yamamoto, M. Kajiwara, Y. Suehiro, D. Wang. H. Nakashima
    • Journal Title

      Thin Solid Films 517

      Pages: 204-206

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe-and Ge-on-insulator2008

    • Author(s)
      H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata. H. Nakashima
    • Journal Title

      Applied Physics Letters 93

      Pages: 72104-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Electrical and structural evaluations of high-k gate dielectrics using plasma oxidation and the subsequent annealing of Hf/Si02/Si structure2008

    • Author(s)
      H. Nakashima, Y. Sugimoto, Y Suehiro, K. Yamamoto, M. Kajiwara, K. Hirayama, D. Wang
    • Journal Title

      Semiconductor Science and Technology 23

      Pages: 125020-6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO_2/Si structure2008

    • Author(s)
      H. Nakashima, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kaiiwara, K. Hirayama, D. Wang
    • Journal Title

      Proceeding of 9th International Conference on Solid-State and Integrated-Circuit Technology C5.7

      Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer : wafer ramping process2008

    • Author(s)
      S. Ii, Y. Takata, K. Ikeda, H. Nakashima, H. Nakashima
    • Journal Title

      Thin Solid Films 517

      Pages: 38-40

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Journal Article] Microstructural change of dislocation structure around SiGe/Si Interface in SGOI wafer: wafer ramping process,2007

    • Author(s)
      S., Ii・Y., Takata・K., Ikeda・H., Nakashima・H., Nakashima
    • Journal Title

      5th International Conference on Silicon Epitaxy and Heterostructures, Extended Abstract

      Pages: 32-33

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Journal Article] Dependences of effective work functions of TaN on HfO_2 and SiO_2 on post-metalization anneal2007

    • Author(s)
      Y., Sugimoto・K., Yamamoto・M., Kajiwara・Y., Suchiro・D., Wang・H., Nakashima
    • Journal Title

      5th International Conference on Silicon Epitaxy and Heterostructures, Extended Abstract

      Pages: 194-195

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Journal Article] Tan/Hf系high-k/Siゲートスタック構造め電気特性2007

    • Author(s)
      杉本 陽平、山本 圭介、梶原 誠生、末廣 雄策、中島 寛
    • Journal Title

      九州大学大学院総合理工学報告 第29巻第4号

      Pages: 371-378

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Fabrication of High-k Gate Dielectrics Using Plazma Oxidization and Post Deposition Anneal of Hf/S_1O_2 Si Structure2007

    • Author(s)
      H., Nakashima, Y., Sugimoto, Y., Suehiro, M., Kajiwara, K., Yamamoto, D. Wang
    • Journal Title

      The 6th Int. Conf. Thin Film Physics and Application

      Pages: 185-185

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Dependences of effective work functions of TaN on HfO_2 and SiO_2 on post-metalization anneal2007

    • Author(s)
      Y.Sugimoto, K.Yamamoto, M.Kajiwara, Y.Suehiro, D.Wang, H.Nakashima
    • Journal Title

      5th Int.Conf.Silicon Epitaxy and Heterostructures, Extended Abstract

      Pages: 194-195

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Effective work function modulation of TaN metal gate on HfO_2 after postmetalization annealing2007

    • Author(s)
      Y., Sugimoto・K., Yamamoto・M., Kajiwara・Y., Suchiro・D., Wang・H., Nakashima
    • Journal Title

      Applied Physics Letters Vol.91,No.11

      Pages: 112105-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Journal Article] Dependences of effective work functions of TaN on HfO_2 and S_1O_2 on post-metalization anneal2007

    • Author(s)
      Y., Sugimoto, K., Yamamoto, M., Kajiwara, Y., Suehiro, D., Wang, H., Nakashima
    • Journal Title

      5th Int. Conf. Silicon Epitaxy and Heterostructures

      Pages: 194-195

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_40H/H_2O_2 Solution and Hf Metal Hard Mask2007

    • Author(s)
      Y.Sugimoto, K.Yamamoto, H.Nakashima
    • Journal Title

      Japanese Journal of Apply Physics Vol.46,No.9

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] TaN/Hf系high-k/Siゲートスタック構造の電気特性2007

    • Author(s)
      杉本 陽平, 山本 圭介, 梶原 誠生, 末廣 雄策, 中島 寛
    • Journal Title

      九州大学大学院総合理工学報告 (印刷中)

    • NAID

      120001280766

    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Dependences of effective work functions of TaN on HfO_ 2 and SiO_2 0n post-metalization anneal2007

    • Author(s)
      Y.Sugimoto, K.Yamamoto, M. Kajiwara, Y.Suehiro, D.Wang, H. Nakashima
    • Journal Title

      5th Int.Conf.on Silicon Epitaxy and Heterostructures, Extended Abstract

      Pages: 194-195

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Effective work function modulation of TaN metal gate on HfO_2 after post-metalization annealing2007

    • Author(s)
      Y., Sugimoto, M., Kajiwara, K., Yamamoto, Y., Suehiro, D., Wang, H., Nakashima
    • Journal Title

      Applied Physics Letters Vol. 91, No. 11

      Pages: 112105-3

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Fabrication of High-k Gate Dielectrics Using Plazma Oxidizatin and Post Depasiotion Anneal of Hf/SiO_2 Si Structure2007

    • Author(s)
      H.Nakashima, Y.Sugimoto, Y.Suehiro, M.Kajiwara, K.Yamamoto, D.Wang
    • Journal Title

      6th Int.Conf.on Thin Film Physics and Application, Abstract

      Pages: 185-185

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Fabdcation of High-k Gate Didectrics Using Plazma Oxidizatin and Post Deposition Anneal of Hf/SiO_2 Si Structure2007

    • Author(s)
      H.Nakashima, Y.Sugimoto, Y.Suehiro, M.Kajiwara, K.Yamamoto, D.Wang
    • Journal Title

      6th Int.Conf.Thin Film Physics and Application, Abstract

      Pages: 185-185

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] TaN/Hf系high-k/Siゲートスタック構造の電気特性2007

    • Author(s)
      杉本 陽平, 山本 圭介, 梶原 誠生, 末慶 雄策, 中島 寛
    • Journal Title

      九州大学大学院総合理工学報告 29巻(4号)

      Pages: 371-378

    • NAID

      120001280766

    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Optical and Electrical Ebaluations of Defects in SiGe Thin Layer2007

    • Author(s)
      H., Nakashima・D., Wang
    • Journal Title

      5th International Conference on Silicon Epitaxy and Heterostructures, Extended Abstract

      Pages: 33-34

    • Data Source
      KAKENHI-PROJECT-19026012
  • [Journal Article] Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_4OH/H_2O_2 Solution and Hf Metal Hard Mask2007

    • Author(s)
      Y., Sugimoto, K., Yamamoto, H., Nakashima
    • Journal Title

      Japanese Journal of Apply Physics Vol. 46, No. 9

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_4OH/H_2O_2 Solution and Hf Metal Hard Mask2007

    • Author(s)
      Y.Sugimoto, K.Yamamoto, H.nakashima
    • Journal Title

      Japanese Journal of Applied Physics 46/7

    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Electrical Properties of TaN/Hf based-high-k/Si Gate Stack Structure2007

    • Author(s)
      Y., Sugimoto, K., Yamamoto, M., Kajiwara, Y., Suehiro, H., Nakashima
    • Journal Title

      Engineering Sciences Reports Vol. 28, No. 4

      Pages: 371-378

    • NAID

      120001280766

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Effective work function modulation of TaN metal gate on HfO_2 after post-metalization annealing2007

    • Author(s)
      Y.Sugimoto, M.Kajiwara, K.Yamamoto, Y.Suehiro, D.Wang, H.Nakashima
    • Journal Title

      Applied Physics Letters Vol.91(NO.11)

      Pages: 112105-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Fabrication of High-k Gate Dielectrics Using Plazma Oxidization and Post Deposiotion Anneal of Hf/SiO_2 Si Structure2007

    • Author(s)
      H., Nakashima・Y., Sugimoto・Y., Suehiro・M., Kajiwara・K., Yamamoto・D., Wang
    • Journal Title

      6th International Conference on Thin Film Physics and Application, abstract

      Pages: 185-185

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Journal Article] Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post deposition annealing of Hf/SiO_2/Si structure2006

    • Author(s)
      Y.Sugimoto, H.Adachi, K.Yamamoto, D.Wang, H.Nakashima, H.Nakashima
    • Journal Title

      Abstract of the European Materials Research Society 2006 Spring Meeting E-MRS (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and Post-deposition annealing of a Hf/S_1O_2/Si structure2006

    • Author(s)
      Y., Sugimoto, H., Adachi, K., Yamamoto, D., Wang, H., Nakashima, H., Nakashima
    • Journal Title

      Materials Science in Semiconductor Processing No. 9

      Pages: 1031-1036

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Electrical characterization of high-k gate dielectrics fabricated using Plasma oxidation and Post-deposition annealing of a Hf/SiO_2/Si structure2006

    • Author(s)
      Y.Sugimoto, H, Adachi, K.Yamamoto, D.Wang, H.Nakashima, H.Nakashima
    • Journal Title

      Materials Science in Semiconductor Processing No.9

      Pages: 1031-1036

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO_2/Si structure2006

    • Author(s)
      Y.Sugimoto, H.Adaci, K.Yamamoto, D.Wang, H.Nakashima, H.nakashima
    • Journal Title

      Materials Science in Semiconductor Processing No.9

      Pages: 1031-1036

    • Data Source
      KAKENHI-PROJECT-18360152
  • [Journal Article] Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post deposition annealing of Hf/SiO_2/Si Structure2006

    • Author(s)
      Y.Sugimoto, H.Adachi, K.Yamamoto, D.Wang, H.Nakashima, H.Nakashima
    • Journal Title

      Abstract of European Materials Research Society 2006 Spring Meeting E-MRS (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface2005

    • Author(s)
      Y.Sugimoto, N.Takata, T.Hirota, K.Ikeda, F.Yoshida, H.Nakashima, H.nakashima
    • Journal Title

      Jpn. J. Appl. Phys. Vol.44, No.7A

      Pages: 4770-4775

    • NAID

      10016608177

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Fabrication of High-k Gate Dielectrics using Plasma Oxidization and Post Deposition Annealing of Hf/SiO_2/Si Structure2005

    • Author(s)
      Y.Sugimoto, H.Adachi, Y.Yoshimura, H.Nakashima, H.Nakashima
    • Journal Title

      Proc. of the 7th Cross Straits Symposium on Materials, Energy and Environmental Sciences

      Pages: 79-80

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering2005

    • Author(s)
      J.Wang, L.Zhao, N.H.Luu, D.Wang, H.Nakashima
    • Journal Title

      Appl.Phys. A (Materials Science & Processing) Vol.80,No.8

      Pages: 1781-1787

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering2005

    • Author(s)
      J.Wang, L.Zhao, N.H.Luu, D.Wang, H.Nakashima
    • Journal Title

      Apple. Phys. A(materials Science & Processing) Vol. 80, No.8

      Pages: 1781-1787

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface2005

    • Author(s)
      Y.Sugimoto, N.Takata, T.Hirota, K.Ikeda, F.Yoshida, H.Nakashima, H.Nakashima
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44,No.7A

      Pages: 4770-4775

    • NAID

      10016608177

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Optimization of Ar-diluted N_2 electron cyclotron resonance plasma for high-quality SiN film growth at low temperature2004

    • Author(s)
      N.H.Luu, L.Zhao, D.Wang, Y.Sugimoto, K.Ikeda, H.Nakashima, H.Nakashima
    • Journal Title

      Engineering Sciences Reports, Kyushu University Vol.26,No.1

      Pages: 1-8

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Optimization of Ar-diluted N_2 electron cyclotron resonance plasma for high-quality SiN film growth at low temperature2004

    • Author(s)
      N.H.Luu, L.Zhao, D.Wang, Y.Sugimoto, K.Ikeda, H.Nakashima, H.Nakashima
    • Journal Title

      九州大学院総合理工学報告 Vol.26, No.1

      Pages: 1-8

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Optimization of Ar-diluted N_2 electron cyclotron resonance plasma for high-quality SiN film2004

    • Author(s)
      N.H.Luu, L.Zhao, D.Wang, Y.Sugimoto, K.Ikeda, H.Nakashima, H.Nakashima
    • Journal Title

      九州大学大学院総合理工学報告 26・1

      Pages: 1-8

    • Data Source
      KAKENHI-PROJECT-16360156
  • [Journal Article] Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using Electron cyclotron resonance plasma spattering

    • Author(s)
      Junli Wang, Liwei Zhao, Nam Hoai Luu, Dong Wang, Hiroshi Nakashima
    • Journal Title

      Applied Physics A (印刷中)

    • Data Source
      KAKENHI-PROJECT-16360156
  • [Presentation] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019

    • Author(s)
      K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di
    • Organizer
      2nd Joint ISTDM / ICSI 2019 Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] 3C-SiC MOSFETの閾値電圧制御に向けたSiO2/Al2O3ゲートスタック中の固定電荷・界面ダイポールの解析2019

    • Author(s)
      岡 龍誠、山本 圭介、王 冬、中島 寛、菱木 繁臣、川村 啓介
    • Organizer
      第11回半導体材料・デバイスフォーラム
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang
    • Organizer
      236th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Low temperature (<300oC Fabrication of Ge MOS Structure for Advanced Electronic Devices2019

    • Author(s)
      K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      2019 International Conference on Solid State Devices and Materials (SSDM2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      H. Nakashima(Invited), W.-C. Wen, K. Yamamoto, D. Wang
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタとn-MOSFET動作2019

    • Author(s)
      山本 圭介、岡 龍誠、王 冬、中島 寛、菱木 繁臣、川村 啓介
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Demonstration of n-MOSFET operation and charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC2019

    • Author(s)
      R. Oka, K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura
    • Organizer
      2019 International Conference on Solid State Devices and Materials (SSDM2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成2019

    • Author(s)
      井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Enhancement of direct band gap electroluminescence in asymmetric metal/Ge/metal diodes2019

    • Author(s)
      D. Wang, T. Maekura, K. Yamamoto, H. Nakashima
    • Organizer
      TACT 2019 International Thin Film Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] SiO2/Al2O3絶縁膜を有する3C-SiC n-MOSキャパシタの固定電荷と界面ダイポール解析2019

    • Author(s)
      岡 龍誠、山本 圭介、王 冬、中島 寛、菱木 繁臣、川村 啓介
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy2019

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      2nd Joint ISTDM / ICSI 2019 Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] 遷移金属窒化物を用いた金属/Geコンタクトの障壁制御2018

    • Author(s)
      山本 圭介、光原 昌寿、王 冬、中島 寛
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks2018

    • Author(s)
      H. Nakashima, W.-C. Wen, K. Yamamoto and D. Wang
    • Organizer
      11th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator2018

    • Author(s)
      K. Yamamoto, K. Nakae, D. Wang, H. Nakashima, Z. Xue, M. Zhang, Z. Di
    • Organizer
      2018 International Conference on Solid State Devices and Materiaals (SSDM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Evaluation of border-traps in GeO2/Ge gate stacks grown by thermal oxidation and plasma oxidation2018

    • Author(s)
      W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang and H. Nakashima
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Low-temperature fabrication of Ge MOS capacitors for spintronics and flexible electronics application2018

    • Author(s)
      Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] GOI基板を用いた非対称ー金属/Ge/金属構造光素子の作製・特性評価2018

    • Author(s)
      後藤 太希、前蔵 貴行、仲江 航平、山本 圭介、中島 寛、王 冬、Miao Zhang、Zhongying Xue、Zenfeng Di
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] 電子ビーム蒸着によるGe上へのY酸化物系ゲート絶縁膜形成2018

    • Author(s)
      秋山 健太郎、井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Smart-Cut法を用いて作製したGe-on-Insulatorの極性変化2018

    • Author(s)
      仲江 航平、薛 飛達、山本 圭介、王 冬、中島 寛、Miao Zhang、Zhongying Xue、Zenfeng Di
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-Insulator substrate2018

    • Author(s)
      T. Maekura, T. Goto, K. Nakae, K. Yamamoto, H. Nakashima, D. Wang
    • Organizer
      2018 International Conference on Solid State Devices and Materiaals (SSDM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks2018

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      12th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Impact of Al2O3 interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application2018

    • Author(s)
      K. Yamamoto, D. Wang, H. Nakashima, S. Hishiki, K. Kawamura
    • Organizer
      2018 International Conference on Solid State Devices and Materiaals (SSDM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Direct band gap electroluminescence and photo detection in asymmetric metal/Ge/metal diodes2018

    • Author(s)
      D. Wang, T. Maekura, K. Yamamoto, H. Nakashima
    • Organizer
      Collaborative Conference on Materials Research (CCMR) 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Fabrication of Ge MOS Capacitor by Metal Yttrium Oxidation2018

    • Author(s)
      K. Yamamoto, K. Akiyama, K. Iseri, W.-C. Wen, D. Wang, and H. Nakashima
    • Organizer
      12th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Border trap characterization using deep-level transient spectroscopy for GeO2/Gegate stacks grown by thermal oxidation and plasma oxidation2018

    • Author(s)
      Wei-Chen Wen、Keisuke Yamamoto、Dong Wang、Hiroshi Nakashima
    • Organizer
      シリコン材料の科学と技術フォーラム2018
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy2017

    • Author(s)
      W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2017年第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy2017

    • Author(s)
      W. -C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2017 International Conference on Solid State Devices and Materiaals (SSDM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Achievement of Ultralow Contact Resistivity of Metal/n+-Ge Contacts with Zr-N-Ge Amorphous Interlayer2017

    • Author(s)
      H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
    • Organizer
      232nd ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構2017

    • Author(s)
      永冨 雄太、織田 知輝、坂口 大成、山本 圭介、王 冬、中島 寛
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調(Ⅱ)2017

    • Author(s)
      板屋 航、仲江 航平、山本 圭介、王 冬、中島 寛
    • Organizer
      2017年第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes2017

    • Author(s)
      T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
    • Organizer
      The 10th International Conference on Silicon Epitaxy and heterostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks2017

    • Author(s)
      W.-C. Wen, T. Sakaguchi, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      The 10th International Conference on Silicon Epitaxy and heterostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] メタルS/D型 Ge n-MOSFET のチャネル移動度の基板濃度依存性2017

    • Author(s)
      坂口 大成、秋山 健太郎、山本 圭介、王 冬、中島 寛
    • Organizer
      2017年第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2017

    • Author(s)
      K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
    • Organizer
      10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Year and Date
      2017-02-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Dependence of Channel Mobility on Substrate Impurity Concentration for Metal Source/Drain Ge MOSFETs2017

    • Author(s)
      T. Sakaguchi, K. Akiyama, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2017 International Conference on Solid State Devices and Materiaals (SSDM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03237
  • [Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2017

    • Author(s)
      岡本 隼人、山本 圭介、王 冬、中島 寛
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-17
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価2017

    • Author(s)
      前蔵 貴行、本山 千里、田中 健太郎、山本 圭介、中島 寛、王 冬
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes2017

    • Author(s)
      T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
    • Organizer
      10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Year and Date
      2017-02-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2016

    • Author(s)
      岡本 隼人、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年秋季第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ:新潟コンベンションセンター
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価2016

    • Author(s)
      山本 圭介、岡本 隼人、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks2016

    • Author(s)
      Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2016-01-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価2016

    • Author(s)
      山本 圭介、岡本 隼人、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016

    • Author(s)
      Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2016-01-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al/SiO2/GeO2/Geゲートスタックに於ける界面ダイポールの生成と消失2016

    • Author(s)
      永冨 雄太、建山 知輝、坂口 大成、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年秋季第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ:新潟コンベンションセンター
    • Year and Date
      2016-09-15
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016

    • Author(s)
      H. Okamoto, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2016 International Conference on Solid State Devices and Materiaals (SSDM2016)
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Japan
    • Year and Date
      2016-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2gate stacks2016

    • Author(s)
      Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
    • Place of Presentation
      Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
    • Year and Date
      2016-06-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 反応性スパッタリングで形成したZrN 物性とGe とのコンタクト特性2016

    • Author(s)
      板屋 航, 岡本 隼人, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上2016

    • Author(s)
      永冨 雄太、田中 慎太郎、建山 知輝、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] La2xA2(1-x)O3(A=Lu, Y)/La2O3/Ge(111) MIS構造におけるC-V特性の改善2016

    • Author(s)
      金島 岳、銭高 真人、山本 圭介、山城 陸、只野 純平、野平 博司、中島 寛、山田 晋也、浜屋 宏平
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN-source/drain structure2016

    • Author(s)
      T. Tateyama, Y. Nagatomi, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減2016

    • Author(s)
      建山 知輝、永冨 雄太、田中 慎太郎、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Ge 光素子における基板キャリア密度と伝導型が及ぼす発光特性への影響2016

    • Author(s)
      田中 健太郎, 前蔵 貴行, 本山 千里, 王 冬, 山本 圭介, 中島 寛
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-04
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks2016

    • Author(s)
      Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Sendai
    • Year and Date
      2016-01-11
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Characterization of Ge Tunnel FET with Metal/Ge Junction2016

    • Author(s)
      K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
    • Organizer
      7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
    • Place of Presentation
      Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
    • Year and Date
      2016-06-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上2016

    • Author(s)
      永冨 雄太、田中 慎太郎、建山 知輝、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減2016

    • Author(s)
      建山 知輝、永冨 雄太、田中 慎太郎、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] ゲートスタック中へのAl 導入によるp-MOSFET の移動度向上機構2016

    • Author(s)
      坂口 大成, 建山 知輝, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation2016

    • Author(s)
      W.-C. Wen, Y. Nagatomi, L. Zhao, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016

    • Author(s)
      H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
    • Organizer
      JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration"
    • Place of Presentation
      Forschungszentrum J&uuml;lich, Germany
    • Year and Date
      2016-11-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016

    • Author(s)
      T. Maekura, C. Motoyama, K. Yamamoto, H. Nakashima, and D. Wang
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Sendai
    • Year and Date
      2016-01-11
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes2016

    • Author(s)
      C. Motoyama, T. Maekura, K. Tanaka, D. Wang, K. Yamamoto, H. Nakashima
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      American Vacuum Society (AVS) Shanghai Thin Film Conference
    • Place of Presentation
      Fuxuan Hotel, Shanghai, China
    • Year and Date
      2015-10-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      228th ECS Meeting
    • Place of Presentation
      Phoenix, AZ, USA
    • Year and Date
      2015-10-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] SiO2/GeO2/GeゲートスタックにおけるAl導入効果2015

    • Author(s)
      田中 慎太郎、建山 知輝、永冨 雄太、山本 圭介、王 冬、中島 寛
    • Organizer
      2015年応用物理学会九州支部学術講演会
    • Place of Presentation
      琉球大学
    • Year and Date
      2015-12-05
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用2015

    • Author(s)
      永冨 雄太, 田中 慎太郎, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-19
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015

    • Author(s)
      Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
    • Place of Presentation
      Sapporo Convention Center, Japan
    • Year and Date
      2015-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] nウェルの形成のためのGe基板上へのSb拡散2015

    • Author(s)
      米田 亮太、山本 圭介、中島 寛
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-14
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015

    • Author(s)
      K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Sendai
    • Year and Date
      2015-01-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御2015

    • Author(s)
      永冨 雄太、長岡 裕一、田中 慎太郎、山本 圭介、王 冬、中島 寛
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-14
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack2015

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2015-01-30
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015

    • Author(s)
      K Yamamoto, R. Noguchi, ,M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
    • Organizer
      9th Int. Conf. on Si Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用2015

    • Author(s)
      永冨 雄太、田中 慎太郎、長岡 裕一、山本 圭介、王 冬、中島 寛
    • Organizer
      シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-19
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      The 2nd International Conference & Exhibition for Nanopia
    • Place of Presentation
      Changwon Exhibition Convention Center, Gyeongsangnam-do, Korea
    • Year and Date
      2015-11-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure2015

    • Author(s)
      Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
    • Place of Presentation
      The University of Montreal, Quebec, Canada
    • Year and Date
      2015-05-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非対称-金属/Ge/金属構造を有する光素子の試作と特性評価2015

    • Author(s)
      前蔵 貴行, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes2015

    • Author(s)
      Takayuki Maekura, Dong Wang, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
    • Place of Presentation
      Sapporo Convention Center, Japan
    • Year and Date
      2015-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Organizer
      228th ECS Meeting
    • Place of Presentation
      Phoenix, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes2015

    • Author(s)
      D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
    • Organizer
      American Vacuum Society (AVS) Shanghai Thin Film Conference
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2015-10-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack2015

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Sendai
    • Year and Date
      2015-01-30
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015

    • Author(s)
      H. Nakashima, K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, and M. Nishida
    • Organizer
      9th Int. Conf. on Si Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
    • Place of Presentation
      The University of Montreal, Quebec, Canada
    • Year and Date
      2015-05-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure2015

    • Author(s)
      D. Wang, T. Maekura,K. Yamamoto, and H. Nakashima
    • Organizer
      9th Int. Conf. on Si Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation2015

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Organizer
      American Vacuum Society (AVS) Shanghai Thin Film Conference
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2015-10-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic Devices2015

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Organizer
      The 2nd International Conference & Exhibition for Nanopia
    • Place of Presentation
      Changwon, Korea,
    • Year and Date
      2015-11-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減の検討2015

    • Author(s)
      建山 知輝、田中 慎太郎、永冨 雄太、山本 圭介、王 冬、中島 寛
    • Organizer
      2015年応用物理学会九州支部学術講演会
    • Place of Presentation
      琉球大学
    • Year and Date
      2015-12-05
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] 非対称金属構造を有するGeダイオードの発光特性および受光特性2015

    • Author(s)
      本山 千里、前蔵 貴行、王 冬、山本 圭介、中島 寛
    • Organizer
      2015年応用物理学会九州支部学術講演会
    • Place of Presentation
      琉球大学
    • Year and Date
      2015-12-05
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] 非対称金属構造を有するGeダイオードの金属コンタクトおよび表面パッシベーション方法の違いによる発光特性・受光特性の改善2015

    • Author(s)
      前蔵 貴行、本山 千里、王 冬、山本 圭介、中島 寛
    • Organizer
      2015年応用物理学会九州支部学術講演会
    • Place of Presentation
      琉球大学
    • Year and Date
      2015-12-05
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015

    • Author(s)
      Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2015-01-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御2015

    • Author(s)
      永冨 雄太, 長岡 裕一, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-14
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015

    • Author(s)
      Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
    • Place of Presentation
      The University of Montreal, Quebec, Canada
    • Year and Date
      2015-05-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes2015

    • Author(s)
      T. Maekura, D. Wang, K. Yamamoto, and H. Nakashima
    • Organizer
      2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
    • Place of Presentation
      Hokaido
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] 極薄EOTを有するn-Ge上high-kゲートスタックの形成と評価2015

    • Author(s)
      岡本 隼人、山本 圭介、王 冬、中島 寛
    • Organizer
      2015年応用物理学会九州支部学術講演会
    • Place of Presentation
      琉球大学
    • Year and Date
      2015-12-05
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes2015

    • Author(s)
      Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      American Vacuum Society (AVS) Shanghai Thin Film Conference
    • Place of Presentation
      Fuxuan Hotel, Shanghai, China
    • Year and Date
      2015-10-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015

    • Author(s)
      S. Tanaka, Y. Nagatomi,Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2015 International Conference on Solid State Devices and Materials (SSDM2015)
    • Place of Presentation
      Hokaido
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge2014

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
    • Organizer
      JSPS Core-to-Core Program,“Atomically Controlled Processsing for Ultralarge Scale Integration”
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2014-11-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調2014

    • Author(s)
      山本 圭介、王 冬、中島 寛
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      226th ECS Meeting
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2014-10-07
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] n形3C-SiCへのゲートスタックの低温形成2014

    • Author(s)
      山本 裕介, 村山 亮介, 山本 圭介, 王 冬, 中島 寛, 菱木 繁臣, 川村 啓介
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2 ECRプラズマ酸化2014

    • Author(s)
      長岡 裕一、永冨 雄太、山本 圭介、王 冬、中島 寛
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] TiN/Geコンタクトにおける低電子障壁発現機構の解明(II)2014

    • Author(s)
      山本 圭介、光原 昌寿、吹留 佳祐、野口 竜太郎、西田 稔、王 冬、中島 寛
    • Organizer
      2014年第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] 原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性2014

    • Author(s)
      田中 慎太郎, 長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学
    • Year and Date
      2014-12-06
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ZrN, Hf/Geコンタクトの電気特性と界面微細構造解析2014

    • Author(s)
      野口 竜太郎、光原 昌寿、山本 圭介、西田 稔、中島 寛、原 徹
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Effect of Kr/O2 ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2014 International Conference on Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba
    • Year and Date
      2014-09-10
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Fabrication of Ge MOS and Ge Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights2014

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Organizer
      7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”
    • Place of Presentation
      Sendai
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces2014

    • Author(s)
      K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-02
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2ECRプラズマ酸化効果2014

    • Author(s)
      長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性2014

    • Author(s)
      田中 慎太郎、長岡 裕一、永冨 雄太、山本 圭介、王 冬、中島 寛
    • Organizer
      2014年応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学
    • Year and Date
      2014-12-06
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge2014

    • Author(s)
      H. Nakashima, K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, and M. Nishida
    • Organizer
      JSPS Core-to Core Program
    • Place of Presentation
      Lueven Belgium
    • Year and Date
      2014-11-13
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      226th ECS Meeting
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2014-10-07
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調2014

    • Author(s)
      山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] バルクGe発光素子のデバイス構造による発光効率の変化2014

    • Author(s)
      前蔵 貴行, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学
    • Year and Date
      2014-12-07
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査2014

    • Author(s)
      永冨 雄太、長岡 裕一、山本 圭介、 王 冬、 中島 寛
    • Organizer
      シリコン材料・デバイス(SDM)研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces2014

    • Author(s)
      Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査2014

    • Author(s)
      永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会, シリコンテクノロジー分科会との合同開催)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al2O3/Ge形成後のプラズマ酸化によるゲートスタックの低温形成2014

    • Author(s)
      永冨 雄太、長岡 裕一、山本 圭介、王 冬、中島 寛
    • Organizer
      2014年第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure2014

    • Author(s)
      Dong Wang, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] n形3C-SiCへのゲートスタックの低温形成2014

    • Author(s)
      山本 裕介、村山 亮介、山本 圭介、王 冬、中島 寛、菱木 繁臣、川村 啓介
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Presentation] Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and2014

    • Author(s)
      K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar, “Atomically Controlled Processsing for Ultralarge Scale Integration”
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2014 International Conference on Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba International Congress Center
    • Year and Date
      2014-09-10
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ゲートスタックへのHf導入によるメタル・ソース/ドレイン Ge p-MOSFETの高移動度化2013

    • Author(s)
      山本 圭介、 佐田隆宏、王 冬、 中島 寛
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] An accurate characterization of metal-insulator-semiconductor interface-state by deep-level transient spectroscopy and its application on Y2O3/Ge gate stacks with ultrathin GeOx interlayer2013

    • Author(s)
      D. Wang, Y. Nagatomi, S. Kojima, S. Kamezawa, K. Yamamoto, and H. Nakashima
    • Organizer
      8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Al2O3/Ge構造形成後のECRプラズマ酸化による固定電荷密度の制御2013

    • Author(s)
      長岡 裕一、永冨 雄太、山本 圭介、王 冬、中島 寛
    • Organizer
      2013年応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET2013

    • Author(s)
      K. Yamamoto, K. Asakawa, D. Wang, and H. Nakashima
    • Organizer
      8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Presentation] Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn2013

    • Author(s)
      K. Hatayama, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Presentation] Fabrication of Metal-Nitride/Si Contacts with Low Electron Barrier Height2013

    • Author(s)
      K. Yamamoto, K. Asakawa, D. Wang, and H. Nakashima
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Presentation] 4族金属窒化膜を用いたSiへの低障壁・低抵抗コンタクトの形成2013

    • Author(s)
      山本 祐介、村山 亮介、山本 圭介、王 冬、中島 寛
    • Organizer
      2013年応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Presentation] 高温動作CMOS実現に向けた3C-SiC上へのゲート絶縁膜形成2013

    • Author(s)
      村山 亮介、山本 圭介、王 冬、中島 寛
    • Organizer
      2013年応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-25600101
  • [Presentation] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge Contacts2013

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Y2O3ゲートTiNメタル・ソース/ドレイン型Ge n-MOSFETの作製2013

    • Author(s)
      亀沢 翔、山本 圭介、王 冬、中島 寛
    • Organizer
      2013年応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact2013

    • Author(s)
      K. Yamamoto, T. Sada, H. Yang, D. Wang, and H. Nakashima
    • Organizer
      8th Int. Conf. on Si Epitaxy and Heterostructures & 6th Int. Symp. on Control of Semiconductor Interfaces
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] TiN/Ge, Ti/Ge接触界面の微細構造解析2013

    • Author(s)
      野口 竜太郎、吹留 佳祐、光原 昌寿、西田 稔、山本圭介、中島 寛
    • Organizer
      2013年応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-25249035
  • [Presentation] ショットキーソース/ドレインGe p-MOSFETの作製と電気的特性2011

    • Author(s)
      佐田隆宏、楊海貴、山本圭介、王冬、中島寛
    • Organizer
      2011年応用物理学会九州支部学術講演会
    • Place of Presentation
      鹿児島大学
    • Year and Date
      2011-11-26
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Ge-MOSキャパシタに於けるTiNメタルゲート形成後の熱処理効果2011

    • Author(s)
      岩村義明、坂本敬太、平山佳奈、山本圭介、楊海貴、王冬、中島寛
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 2層パッシベーション法で作製したGe-MOSFETの電気特性2011

    • Author(s)
      山本圭介、上野隆二、山中武、平山佳奈、楊海貴、王冬、中島寛
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate2011

    • Author(s)
      T.Yamanaka,K.Yamamoto, K.Sakamoto, H.Yang, D.Wang, H.Nakashima
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM2011)
    • Place of Presentation
      WINC AICHI (Nagoya)
    • Year and Date
      2011-09-28
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Ge上へのZrとSiO_2堆積によるhigh-k/Geゲートスタックの形成2011

    • Author(s)
      小島秀太、坂本敬太、山本圭介、楊海貴、王冬、中島寛
    • Organizer
      2011年応用物理学会九州支部学術講演会
    • Place of Presentation
      鹿児島大学
    • Year and Date
      2011-11-26
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] High-quality gate-stack formation on Ge and defect termination at the interface2011

    • Author(s)
      H.Nakashima, K.Hirayama, K.Yamamoto, H.Yang, D.Wang
    • Organizer
      E-MRS 2011 Spring Meeting, Symposium I, Transport and photonics in Si-based nanodevices, 17-6
    • Place of Presentation
      Nice, France(招待講演)
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] TiNゲートGe-MOSキャパシタのPMAによる窒素導入効果2011

    • Author(s)
      坂本敬太、岩村義明、山本圭介、楊海貴、王冬、中島寛
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 1.0nm EOTを有するhigh-k/Geゲートスタックの形成2011

    • Author(s)
      小島秀太、坂本敬太、山本圭介、王冬、中島寛
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Mobility and strain evaluations of SiGe-on-insulator substrates with different SiGelayer thickness and Ge fraction2011

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      7^<th> Int.Conf.on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-29
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 極薄ゲート絶縁膜を有するGe-MOSFET作製のための表面保護プロセスの検討2011

    • Author(s)
      高橋涼介、山中武、山本圭介、楊海貴、王冬、中島寛
    • Organizer
      2011年応用物理学会九州支部学術講演会
    • Place of Presentation
      鹿児島大学
    • Year and Date
      2011-11-26
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] "Mobility and strain evaluations of SiGe-on-insulator substrates with different SiGe layer thickness and Ge fraction2011

    • Author(s)
      H. Yang, D. Wang, H. Nakashima
    • Organizer
      7^<th> Int. Conf. on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-29
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Alleviation of Fermi-level pinning at metal/Ge interface by direct deposition of TiN on Ge surface2011

    • Author(s)
      M.Iyota, K.Yamamoto, D.Wang, H.Yang, H.Nakashima
    • Organizer
      7^<th> Int.Conf.on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO_2/GeO_2 Bilayer by Nitrogen Incorporation2011

    • Author(s)
      K.Sakamoto, Y.Iwamura, K.Yamamoto, H.Yang, D.Wang, H.Nakashima
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM2011)
    • Place of Presentation
      WINC AICHI (Nagoya)
    • Year and Date
      2011-09-28
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] High Performance Ge MOSFETS with Bilayer-Passivated MOS interface2011

    • Author(s)
      K.Yamamoto, R.Ueno, T.Yamanaka, K.Hirayama, H.Yang, D.Wang, H.Nakashima
    • Organizer
      7^<th> Int.Conf.on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] TiN/SiO_2/GeO_2/Geゲートスタックを有するGe n-MOSFETの電気的特性2011

    • Author(s)
      山中武、山本圭介、上野隆二、坂本敬太、楊海貴、王冬、中島寛
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 低障壁TiN/n-Geコンタクトの形成とコンタクト抵抗評価2011

    • Author(s)
      山本圭介、原田健司、楊海貴、王冬、中島寛
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2011-03-18
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] TiNショットキー・ソース/ドレインGe n-MOSFETの作製2011

    • Author(s)
      山本圭介、山中武、原田健司、佐田隆宏、坂本敬太、小島秀太、王冬、中島寛
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] TiN堆積によるn-Ge基板へのオーミックコンタクトの形成2011

    • Author(s)
      井餘田昌俊、楊海貴、王冬、中島寛
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] HfGe_xショットキー・ソース/ドレインGe p-MOSFETの作製2011

    • Author(s)
      山本圭介、佐田隆宏、山中武、坂本敬太、小島秀太、楊海貴、王冬、中島寛
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] High-quality gate-stack formation on Ge and defect termination at the interface2011

    • Author(s)
      H. Nakashima, K. Hirayama, K. Yamamoto, H. Yang, D. Wang
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Defect characterization and control for Site-on-insulator2010

    • Author(s)
      D.Wang, H.Yang, H.Nakashima
    • Organizer
      The 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
    • Place of Presentation
      Shanghai, China(Invited)
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 2層パッシベーションで作製したMOS界面を有するGe-nMOSFETの電気的特性2010

    • Author(s)
      山中武、山本圭介、上野隆二、平山佳奈、岩村義明、楊海貴、王冬、中島寛
    • Organizer
      2010年応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学
    • Year and Date
      2010-11-28
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Ge-MOS構造に於ける高品質界面層の形成2010

    • Author(s)
      上野隆二、平山佳奈、岩村義明、吉野圭介、楊海貴、王冬、中島寛
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Effect of Al_2O_3 deposition and the subsequent annealing on passivation of defectsin Ge-rich Site-on-insulator2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      International Symposium on Technology Evolution for Silicon Nano-Electronics
    • Place of Presentation
      東京工業大学
    • Year and Date
      2010-06-03
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] TiN/ZrSiO_x/GeO_2/Geゲートスタックの形成2010

    • Author(s)
      岩村義明、平山佳奈、上野隆二、楊海貴、王冬、中島寛
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Fabrication of high quality Ge-MOS capasitor by ultra-thin SiO_2/GeO_x bi-layer passivation combined with ECR SiO_2-deposition2010

    • Author(s)
      K.Hirayama, K.Yoshino, R.Ueno, Y.Iwamura, H.Yang, D.Wang, H.Nakashima
    • Organizer
      5^<th> International SiGe Technology and Device Meeting
    • Place of Presentation
      Stockholm, Sweden
    • Year and Date
      2010-05-25
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Defect evaluation and control of Site-on-insulator substrate fabricated by the Gecondensation technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      The Forum on the Science and Technology of Silicon Materials
    • Place of Presentation
      岡山大学
    • Year and Date
      2010-11-15
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Effective Passivation of defects in Ge-rich SiGe-on-insulator substrates by Al_2O_3 deposition and the subsequent post-annealing2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      5^<th> International SiGe Technology and Device Meeting
    • Place of Presentation
      Stockholm, Sweden
    • Year and Date
      2010-05-25
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO_2/GeO_2 Bi-Layer Passivation2010

    • Author(s)
      K.Hirayama, R.Ueno, Y.Iwamura, K.Yoshino, D.Wang, H.Yang, H.Nakashima
    • Organizer
      2010 International Conference on Solid State Devices and Materials (SSDM2010)
    • Place of Presentation
      東京大学
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Hole-Mobility Enhancement in Ultrathin Strained Si_<0.5>Ge_<0.5>-on-Insulator Fabricated by Ge Condensation Technique2010

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      The 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010)
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 酸化濃縮Site-On-Insulator基板の欠陥評価と制御2010

    • Author(s)
      中島寛、楊海貴、王冬
    • Organizer
      日本学術振興会「結晶加工と評価技術第145委員会」第124回研究会
    • Place of Presentation
      明治大学
    • Year and Date
      2010-10-19
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Ge上への極薄SiO_2/GeO_2界面層の形成2010

    • Author(s)
      平山佳奈、吉野圭介、岩村義明、上野隆二、楊海貴、王冬、中島寛
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Ge上への極薄SiO_2/GeO_2界面層の形成2010

    • Author(s)
      平山佳奈、吉野圭介、岩村義明、上野隆二、楊海貴、王冬、中島寛
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Al/TiN/ZrSiO_x/GeO_2/Geゲートスタックの形成2010

    • Author(s)
      坂本敬太、平山佳奈、岩村義明、上野隆二、楊海貴、王冬、中島寛
    • Organizer
      2010年応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学
    • Year and Date
      2010-11-28
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Al_2O_3PDAによる酸化濃縮SiGe-On-Insulator基板中の欠陥制御2010

    • Author(s)
      井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Al_2O_3PDAによる酸化濃縮SiGe-On-Insulator基板中の欠陥制御2010

    • Author(s)
      井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO_2 interlayers2009

    • Author(s)
      K.Hirayama, W.Kira, K.Yoshino, H.Yang, D.Wang, H.Nakashima
    • Organizer
      European Materials Research Society 2009 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-11
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Defect Control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima, K.Hirayama, S.Kojima, S.Ikeura
    • Organizer
      European Materials Research Society 2009 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-08
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] GeO_2/Ge界面のDLTS法による評価2009

    • Author(s)
      上野隆二、平山佳奈、吉野圭介、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      2009 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2009-10-08
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Electrical characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO_2 interlayers2009

    • Author(s)
      K.Hirayama, W.Kira, K.Yoshino, H.Yang, D.Wang, H.Nakashima
    • Organizer
      European Materials Research Society 2009 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-11
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] 酸化濃縮法で作成したSiGe-On-Insulator基板中の欠陥制御2009

    • Author(s)
      井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] ZrSiO_x/GeO_2/Ge MIS構造の形成と電気的評価2009

    • Author(s)
      吉野圭介、平山佳奈、上野隆二、楊海貴、王冬、中島寛
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-11
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] ZrSiO_x/GeO_2/Ge MIS構造の形成と電気的評価2009

    • Author(s)
      吉野圭介、平山佳奈、上野隆二、楊海貴、王冬、中島寛
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-11
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] 酸化濃縮法で作成したSiGe-On-Insulator基板中の欠陥生成機構2009

    • Author(s)
      池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 酸化濃縮法で作成したSiGe-On-Insulator基板中の欠陥生成機構2009

    • Author(s)
      池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Optical and Electrical Characterizations of Defects in SiGe-on-Insulator(Invited)2009

    • Author(s)
      H.Nakashima, D.Wang, H.Yang
    • Organizer
      216^<th> Electrochemical Society Meeting
    • Place of Presentation
      Vienna, Austria
    • Year and Date
      2009-10-06
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] GeO_2/Ge界面のDHS法による評価2009

    • Author(s)
      上野隆二、平山佳奈、吉野圭介、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] 酸化濃縮法で作成したSiGe-On-lnsulator基板中の欠陥制御2009

    • Author(s)
      井餘田昌俊、池浦奨悟、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] ZrSiO_x/GeO_2/Ge MIS構造の形成と電気的評価2009

    • Author(s)
      岩村義明、平山佳奈、吉野圭介、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] SiGe-on-Insulator基板形成時に発生する欠陥の電気・光学的評価2009

    • Author(s)
      中島寛、楊海貴、王冬
    • Organizer
      日本物理学会領域10格子欠陥・ナノ構造分科、第19回格子欠陥フォーラム「半導体格子欠陥の最前線」
    • Place of Presentation
      九州大学
    • Year and Date
      2009-09-24
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] 界面層にHfGeNおよびGeO_2を有するhigh-k膜/Ge構造の形成と電気的評価2009

    • Author(s)
      中島寛、平山佳奈、楊海貴、王冬
    • Organizer
      応用物理学会分科会シリコンテクノロジー : 「ゲートスタック研究の進展 Ge系材料を中心に」
    • Place of Presentation
      東京大学
    • Year and Date
      2009-06-19
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] ZrSiO_x/GeO_2/Ge MIS構造の形成と電気的評価2009

    • Author(s)
      岩村義明、平山佳奈、吉野圭介、楊海貴、王冬、中島寛
    • Organizer
      2009年応用物理学会九州支部学術講演会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-11-22
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Optical and Electrical Characterizations of Defects in SiGe-on-Insulator(Invited)2009

    • Author(s)
      H.Nakashima, D.Wang, H.Yang
    • Organizer
      216^<th> Electrochemical Society Meeting
    • Place of Presentation
      Vienna, Austria
    • Year and Date
      2009-10-06
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] 界面層にHfGeNおよびGeO_2を有するhigh-k膜/Ge構造の形成と電気的評価2009

    • Author(s)
      中島寛、平山佳奈、楊海貴、王冬
    • Organizer
      応用物理学会分科会 シリコンテクノロジー:「ゲートスタック研究の進展Ge系材料を中心に」
    • Place of Presentation
      東京大学
    • Year and Date
      2009-06-19
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] SiGe-on-Insulator基板形成時に発生する欠陥の電気・光学的評価2009

    • Author(s)
      中島寛、楊海貴、王冬
    • Organizer
      日本物理学会領域10格子欠陥・ナノ構造分科、第19回格子欠陥フォーラム「半導体格子欠陥の最前線」
    • Place of Presentation
      九州大学
    • Year and Date
      2009-09-24
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Defect Control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima, K.Hirayama, S.Kojima, S.Ikeura
    • Organizer
      European Materials Research Society 2009 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-08
    • Data Source
      KAKENHI-PROJECT-21246054
  • [Presentation] Defect-Induced Deep Levels in SiGe-on-Insulator Substrate Fabricated using Ge Condensation Technique2009

    • Author(s)
      H.Yang, D.Wang, H.Nakashima
    • Organizer
      2009 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2009-10-08
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Ge基板上へのpn接合形成2008

    • Author(s)
      真栄田祐、楊海貴、王冬、中島寛
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      宮崎大学
    • Year and Date
      2008-11-29
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Ge上へのhigh-kゲート絶縁膜形成2008

    • Author(s)
      吉野圭介、吉良渉、平山佳奈、楊海貴、王冬、中島寛
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      宮崎大学
    • Year and Date
      2008-11-29
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Al/Hf_3N_4/Ge MIS構造の形成と電気的評価2008

    • Author(s)
      平山 佳奈、吉良 渉、末廣 雄策、王 冬、中島 寛
    • Organizer
      2008年春季第55回応用物理学会関係連合講演会
    • Place of Presentation
      日本大学理工学部(船橋キヤンパス)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] Electrical and Structural Evaluations of Ultrathin SiGe and Ge-on-insulator Fabricated Using Ge Condensation by Dry Oxidation2008

    • Author(s)
      H. Yang, D. Wang, H. Gao, K. Hirayama, K. Ikeda, S. Hata, H. Nakashima, H. Nakashima
    • Organizer
      2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2008-09-25
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] SOI構造に於けるチャネル層の移動度評価2008

    • Author(s)
      池浦奨悟、小嶋慧、楊海貴、王冬、中島寛
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      宮崎大学
    • Year and Date
      2008-11-29
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Hf_xGe_<1-x>N_y界面層を有する絶縁膜NGe構造の形成2008

    • Author(s)
      平山佳奈、吉良渉、楊海貴、王冬、中島寛
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-04
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge Condensation by dry oxidation (Invited)2008

    • Author(s)
      H. Nakashima, D. Wang
    • Organizer
      4^<th> International SiGe Technology and Device Meeting
    • Place of Presentation
      Hchinchu, Taiwan
    • Year and Date
      2008-05-14
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of HVSiO_2/Si structure2008

    • Author(s)
      H. Nakashima, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kaiiwara, K. Hiravama, D. Wang
    • Organizer
      9th International Conference on Solid-State and Integrated-Circuit Technology
    • Place of Presentation
      Beijing, China
    • Year and Date
      2008-10-23
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] 薄膜SiGe-及びGe表On-Insulatorのバックチャネル移動度に与える表面パッシベーションの影響2008

    • Author(s)
      楊海貴、王冬、中島寛、高紅叶、平山佳奈、池田賢一、波多聰、中島英治
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] SOI構造に於けるチャネル層の移動度評価2008

    • Author(s)
      小嶋慧、王冬、中島寛
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Data Source
      KAKENHI-PROJECT-20035011
  • [Presentation] Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metalization anneal2007

    • Author(s)
      Y., Sugimoto・K., Yamamoto・M., Kajiwara・Y., Suehiro・D., Wang・H., Nakashima
    • Organizer
      5th International Conference on Silicon Epitaxy And Heterostructure
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-25
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] Dependences of effective work functions of TaN on HfO_2 and SiO_2 on post-metalization anneal2007

    • Author(s)
      Y., Sugimoto, K., Yamamoto, M., Kajiwara, Y., Suehiro, D., Wang, H., Nakashima
    • Organizer
      5th Int. Conf. Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-25
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Fabrication of Hight-k Gate Dielectrics Using Plazma Oxidization and Post Deposition Anneal of Hf/SiO_2 Si Structure2007

    • Author(s)
      H., Nakashima・Y., Sugimoto・Y., Suehiro・M., Kajiwara・K., Yamamoto・D., Wang
    • Organizer
      The 6th Int. Conf. Thin Film Physics and Application
    • Place of Presentation
      上海交通大学,中国
    • Year and Date
      2007-09-27
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] Fabrication of High-k gate dielectrics using plasma oxidation and subsequent PDA treatment of Hf/S_1O_2/Si structure2007

    • Author(s)
      Y., Suehiro, Y., Sugimoto, M., Kajiwara, D., Wang, H., Nakashima
    • Organizer
      The 68th Meeting, Japan Society of Applied Physics
    • Place of Presentation
      Hokkaido Institute of Technology
    • Year and Date
      2007-09-05
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Dependences of effective work functions of TaN on HfO_2 and SiO_2 0n post-metalization anneal2007

    • Author(s)
      Y.Sugimoto, K.Yamamoto, M.Kajiwara, Y.Suehiro, D.Wang, H.Nakashima
    • Organizer
      5^<th> Int.Couf.on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-25
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Hf/SiO_2/Si構造のプラズマ酸化とPDAを用いたhigh-kゲート絶縁膜の形成2007

    • Author(s)
      末廣 雄策、杉本 陽平、梶原 誠生、王 冬、中島 寛
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-05
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Optical and Electrical Evaluations of Defects in SiGe Thin Layer2007

    • Author(s)
      H., Nakashima・D., Wang
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces
    • Place of Presentation
      首都大学東京、八王子
    • Year and Date
      2007-11-13
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] Fabrication of High-k Gate Dielectrics Using Plazma Oxidization and Post Deposition Anneal of Hf/SiO_2/Si Structure2007

    • Author(s)
      H., Nakashima, Y., Sugimoto, Y., Suehiro, M., Kajiwara, K., Yamamoto, D., Wang
    • Organizer
      The 6th Int. Conf. Thin Film Physics and Application
    • Place of Presentation
      Shanghai, JiaotongUniv., China
    • Year and Date
      2007-09-27
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Fabrication of High-k Gate Dielectrics Using Plazma Oxidization and Post Deposition Anneal of Hf/SiO_2/Si Structure2007

    • Author(s)
      H.Nakashima, Y.Sugimoto, Y.Suehiro, M.Kajiwara, K.Yamamoto, D.Wang
    • Organizer
      6th Int.Conf.Thin Film Physics and Application
    • Place of Presentation
      上海交通大学、中国
    • Year and Date
      2007-09-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Hf/SiO2/Si構造のプラズマ酸化とPDAを用いたhigh-kゲート絶縁膜の形成2007

    • Author(s)
      末慶 雄策、杉本 陽平、梶原 誠生、王 冬、中島 寛
    • Organizer
      第68回応用物理学会学術構演会 5a-ZQ-7
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-05
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] Ge上へのSiO_2ゲート絶縁膜形成2007

    • Author(s)
      平山 佳奈、吉良 渉、末廣 雄策、王 冬、中島 寛
    • Organizer
      2007年(2007度)応用物理学会九州支部学術構演会
    • Place of Presentation
      九州工業大学工学部
    • Year and Date
      2007-12-01
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] Modulation of effective work function of Tae on HfO_2 and S_1O_2 by PDA treatments2007

    • Author(s)
      M., Kajiwara, Y., Suehiro, Y., Sugimoto, D., Wang, H., Nakashima
    • Organizer
      The 68th Meeting, Japan Society of Applied Physics
    • Place of Presentation
      Hokkaido Institute of Technology
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Microstructrual chage of disolcation structure around SiGe/Si interface in SGOI wager wafer ramping process2007

    • Author(s)
      S., Ii・Y., Takata・K., Ikeda・H., Nakashima・H., Nakashima
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-21
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] 絶縁膜上の半導体薄膜の結晶性評価:歪Si-SGOIウェーバ開発から2007

    • Author(s)
      中島 寛、王 冬
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバ化ス第162委員会, 第53回研究会
    • Place of Presentation
      佐賀県、唐津市
    • Year and Date
      2007-07-14
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] PMA処理によるHfO_2及びSiQ_2上のTaNメタルゲートの実効仕事関数変調2007

    • Author(s)
      据原 誠生、末農 雄策、杉本 陽平、王 冬、中島 寛
    • Organizer
      第68回応用物理学会学術講演会 6p-ZM-2
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PROJECT-19026012
  • [Presentation] PMA処理によるHfO_2及びSiO_2上のTaNメタルゲートの実効仕事関数変調2007

    • Author(s)
      梶原 誠生、末廣 雄策、杉本 陽平、王 冬、中島 寛
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Fabrication of High-k Gate Dielectrics Using Plazma Oxidizatin and Post Deposiotion Anneal of Hf/SiO_2 Si Strucre2007

    • Author(s)
      H.Nakashima, Y.Sugimoto, Y.Suehiro, M.Kajiwara, K.Yamamoto, D.Wang
    • Organizer
      6^<th> Int. Conf. on Thin Film Physics and Application
    • Place of Presentation
      上海交通大学、中国
    • Year and Date
      2007-09-27
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Dependences of effective work functions of TaN on HfO_2 and SiO_2 on post-metalization anneal2007

    • Author(s)
      Y.Sugimoto, K.Yamamoto, M.Kajiwara, Y.Suehiro, D.Wang, H.Nakashima
    • Organizer
      5th Int.Conf.Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille,France
    • Year and Date
      2007-05-25
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] TaN gate fabrication by sputtering for MOSFET and its device characteristics2006

    • Author(s)
      K., Yamamoto, Y., Sugimoto, H., Nakashima
    • Organizer
      Annual Meeting 2006, Japan Society of Applied Physics, Kyushu Chapter
    • Place of Presentation
      Oita Univ
    • Year and Date
      2006-11-26
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] スパッタ法によるMOSFET用TaNゲートの形成とデバイス特性2006

    • Author(s)
      山本 圭介、杉本 陽平、中島 寛
    • Organizer
      平成18年度応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学工学部
    • Year and Date
      2006-11-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Electrical Characterization of High-k Gate Dielectrics Fabricated Using Plasma Oxidization and Post Deposition Annealing of Hf/SiO_2/Si Structure2006

    • Author(s)
      Y., Sugimoto, H., Adachi, K., Yamamoto, H., Nakashima, D., Wang, H., Nakashima
    • Organizer
      Characterization of High-k Dielectric Materials
    • Place of Presentation
      Nice, France
    • Year and Date
      2006-06-01
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] Electrical Chazacterization of High-k Gate Dielectrics,Fabricated Using Plasma Oxidization and Post Deposition Annealing of Hf1SiO_2/Si Structure2006

    • Author(s)
      Y.Sugimoto, H.Adachi, K.Yamamoto, H.Nakashima, D.Wang, H.Nakashima
    • Organizer
      E-MRS IUMRS ICEM 2006 Sping Meeting, SYMPOSIUM L, Characterization of High-k Dielectric Materials
    • Place of Presentation
      Nice,France
    • Year and Date
      2006-06-01
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360152
  • [Presentation] GeO_2界面層を有する上へのhigh-k膜/Ge構造の形成

    • Author(s)
      平山佳奈、吉野圭介、吉良渉、楊海貴、王冬、中島寛
    • Organizer
      第56回応用物理学関係連合講演会
    • Data Source
      KAKENHI-PROJECT-20035011
  • 1.  WANG Dong (10419616)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 223 results
  • 2.  NISHIDA MINORU (90183540)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 3.  FURUKAWA Katsuhiko (40264121)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  MITSUHARA MASATOSHI (10514218)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 9 results
  • 5.  HAMAMOTO Kiichi (70404027)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  YAMAMOTO Keisuke (20706387)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 64 results
  • 7.  NAKASHIMA Hideharu (80180280)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 11 results
  • 8.  渡辺 征夫 (80037902)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  小城 左臣 (80108654)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  白谷 正治 (90206293)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  YANG Haigui
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 67 results
  • 12.  HAMAYA Kohei
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 13.  SAWANO Kentarou
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 14.  YANG H
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results
  • 15.  赤嶺 大志
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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