UESUGI Katsuhiro 植杉克弘

Researcher Number	70261352
Other IDs
External Links
Affiliation (Current)	2022: 室蘭工業大学, 大学院工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2012: 室蘭工業大学, 工学(系)研究科(研究院), 准教授 2012: 室蘭工業大学, 工学研究科, 准教授 2010 – 2011: 室蘭工業大学, 大学院・工学研究科, 准教授 2007 – 2011: 室蘭工業大学, 工学部, 准教授 2006: 室蘭工業大学, 工学部, 助教授 1994 – 2005: Research Institute for Electronic Science, Hokkaido University Research Associat, 電子科学研究所, 助手
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Electron device/Electronic equipment / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Science and Engineering / Electronic materials/Electric materials / 電子材料工学
Keywords	Principal Investigator II-VI族半導体 / ZnSe / 量子井戸箱 / MgS / GaNAs / MOMBE / 量子ドット / CdSe / ナノリソグラフィ / DBR … More / MOVPE / 電子・電気材料 / 電子デバイス機器 / 結晶成長 / MBE・エピタキシャル / 量子井戸 / GaAs / GaAsNSe / 光通信 / 歪補償 / III-V-N窒化物半導体 / InAs / GaAsN / GaNAsSe / GaInNAs / 多重量子井戸 / 負性抵抗 / ダイオード / 薄膜 / 量子構造 / 自己組織化 / 選択成長 / エピタキシャル … More Except Principal Investigator 量子ドット / 選択成長 / 微小光共振器 / II-VI族半導体 / 励起子 / 光ドット / AFM / MOCVD / 自然放出光 / ピラミッド / quantum dots / selective growth / エキシトン / ZnSe / MgS / ナノリソグラフィ / 短波長化 / 発光素子 / 荷電励起子 / 光子相関測定 / MOMBE / 超格子 / フォトン / 歪み超格子 / 閃亜鉛鉱構造 / X線回折 / 青色発光素子 / FDTD / ZnS / 円偏光 / 半導体量子ドット / 単一量子ドット / 偏光相関 / 単一光子 / フォトニック結晶 / 光子アンチバンチング / 原子間力顕微鏡 / MOVPE / blue semiconductor lasers / nanolithography / 3次元微小光共振器 / カーボンマスク / photonic quantum confinement / microcavity / spontaneous emission / semiconductor pyramid / フォノン / エキシトン束縛エネルギー / 量子閉じこめ効果 / H-VI族半導体 / MaS / 光集積化 / 高速発光素子 / 量子位相 / 量子位相ゲート / ソリッドイマルジョンレンズ / 共振器 / コヒーレンス / スピン反転 / 光子 / 位相緩和時間 / 量子情報処理 / スピン反転時間 / 円偏光状態 / 微小共振器 / 励起子状態 / フォトニックナノ共振器 / 準共鳴励起 / 円偏光励起 / 円偏光度 / ラビ振動 / コヒーレント制御 / 単一光子源 / 単一光子検出器 / 量子状態変換 / 電子スピン / 量子鍵配送 / 光ファイバー通信波長帯 / InAs量子ドット / 量子リング / 単一光子発生 / 量子暗号通信 / III-V-N系 / ひずみ補償 / ひずみ超格子 / 量子もつれ合い / 光ファイバー通信 / InAs / 窒化物混晶 / 量子暗号 / 金属埋め込み / 単一光子光源 / 2次相関関数 / オンデマンド / 青色レーザ / ΙΙ-VΙ半導体 / II-VI半導体 / Blue Laser / II-VI Semiconductor / Exciton / Superlattice / Atomic Force Microscope / 束縛エネルギー / II-VI semiconductor / excitons / strained superlattice / zincblende structure / x-ray diffraction / 青色半導体レーザ / p型伝導度制御 / 窒素プラズマ / バンド不連続 / ハンド不連続 / p-type conductivity / Nitrogen plasma / band offset / ブルーシフト / blue-shift / 電子ビームリソグラフィ / ナノ構造 / 光電子集積化 / SEM / carbonaceousfilm / フォトニックドット / 面発光電子 / 面発光素子 / Purcell effect Less

Development of InGaSb hole localized quantum dot structure for quantum communicationPrincipal Investigator
- Principal Investigator
  
  UESUGI Katsuhiro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Muroran Institute of Technology
Study on Electron-photon Quantum-state Conversion in Quantum Dots Embedded in Meta Microcavities
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Single-Photon Generation and Detection and Its Conversion to Electron Spin States for Quantum Information Applications
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Study on coherent control of exciton states in quantum dots embeddedin pyramidal microcavities
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  2004 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
半導体3次元微小光共振器を用いた単一光子による量子位相変調の研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
新しいGaNAsSe半導体混晶による波長1.5μm帯広帯域光通信用光源の開発Principal Investigator
- Principal Investigator
  
  植杉克弘
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hokkaido University
可視・赤外波長域での多波長同時発光デバイスとその集積化の研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Study of Large Purcell Effect in Three-dimensional microcavities
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
可視・赤外波長域での多波長同時発光デバイスとその集積化の研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Control of Spontaneous Emission from Selectively Grown Semiconductor Photonic Dots
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
ワイドギャップ半導体を用いた単電子ナノ構造の作製とその集積化に関する基礎研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Hokkaido University
ワイドギャップ半導体光強閉じ込め系での励起子-フォトン相互作用の研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Development of AFM-SEM Coupled Lithography for Fabricating Nano Optical Devices
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
ワイドギャップ半導体を用いた単電子ナノ構造の作製とその集積化に関する基礎研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hokkaido University
MOVPE法によるZnSe/MgS量子井戸箱の試作研究Principal Investigator
- Principal Investigator
  
  植杉克弘
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido University
Fabrication of quantum dots with visible light emission and study of its stimulated emission
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
ZnSe量子井戸箱の作製技術の開発Principal Investigator
- Principal Investigator
  
  植杉克弘
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido University
室温エキシトンによる青色微小光共振器の研究
- Principal Investigator
  
  末宗幾夫
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Excitonic optical transition in a new II-VI semiconductor superlattice
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Research on Blue Semiconductor Lasers Based on MOCVD
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
量子化された場におけるエキシトン・フォノン、エキシトン・フォトン相互作用の研究
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hokkaido University
Study of High-Performance Blue Semiconductor Lasers Based on Localized Excitons
- Principal Investigator
  
  SUEMUNE Ikuo
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  Hokkaido University
  Hiroshima University

All 2012 2011 2010 2008 2007 2006 2005 2004

All Journal Article Presentation Book

[Book] "Dilute Nitride Semiconductors" Chapter 4 "MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum Dots"(edited by M.Henini)2005
- Author(s)
  I.Suemune, K.Uesugi, S.Ganapathy
- Total Pages
  630
- Publisher
  Elsevier Ltd.
- Data Source
  KAKENHI-PROJECT-16106005
[Book] Dilute Nitride Semiconductors (edited by M.Henini(4章執筆))2005
- Author(s)
  I.Suemune, K.Uesugi, S.Ganapathy
- Total Pages
  630
- Publisher
  Elsevier Ltd.
- Data Source
  KAKENHI-PROJECT-15656077
[Book] Dilute Nitride Semiconductors2005
- Author(s)
  Ikuo Suemune, Katsuhiro Uesugi, SasikalaGanapathy
- Publisher
  Edited by M. Henini, 2005 Elsevier Ltd. Chapter
- Data Source
  KAKENHI-PROJECT-16106005
[Book] "Dilute Nitride Semiconductors"Edited by M.Henini, Chapter 4 "MOMBE Growth and Characterization of III-V-N Compounds and Application to InAs Quantum Dots" pp.137-156.2005
- Author(s)
  I.Suemune, K.Uesugi, S.Ganapathy
- Total Pages
  630
- Publisher
  Elsevier Science Ltd
- Data Source
  KAKENHI-PROJECT-15760232
[Book] "Dilute Nitride Semiconductors" Chapter 4 "MOMBE- Growth and Characterization of III-V-N Compounds and Application to InAs Quantum Dots"(edited by M.Henini)2005
- Author(s)
  I.Suemune, K.Uesugi, S.Ganapathy
- Total Pages
  630
- Publisher
  Elsevier Ltd.
- Data Source
  KAKENHI-PROJECT-17068001
[Book] Dilute Nitride Semiconductors(edited by M.Henini)(4章執筆)2004
- Author(s)
  I.Suemune, K.Uesugi, S.Ganapathy
- Total Pages
  630
- Publisher
  Elsevier Ltd.
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Electron Effective Mass and Mobility in Heavily Dopedn-Ga(AsN) Probed by Raman Scattering2008
- Author(s)
  J. Ibanez, R. Cusco, E. Alarcon-Llado, L. Artus, A.Patane, D. Fowler, L. Eaves, K. Uesugi, and I. Suemune
- Journal Title
  
  Journal of Applied Physics Vol.103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Electron EffectiveMassandMobilityinHeavilyDopedn-Ga(AsN)Probed by Raman Scattering2008
- Author(s)
  J.Ibanez,R.Cusco,E.Alarcon-Llado,L.Artus,A.Patane, D. Fowler, L. Eaves, K. Uesugi, and I. Suemune
- Journal Title
  
  Journal of Applied Physics Vol. 103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Role of Cooper Pairs for the Generation of Entangled Photon Pairs from Single Quantum Dots2008
- Author(s)
  I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo, H. Kumano, E. Hanamura
- Journal Title
  
  Microelectronics Journal Vol.39
  
  Pages: 344-347
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Role of Cooper Pairs for theGenerationofEntangledPhotonPairsfromSingleQuantum Dots2008
- Author(s)
  I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo, H. Kumano, and E. Hanamura
- Journal Title
  
  MicroelectronicsJournal Vol.39
  
  Pages: 344-347
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Application ofInGaAs/GaAsN Strain-compensated Superlattice to InAsQuantumDots2006
- Author(s)
  W. Zhang, K. Uesugi, and I. Suemune
- Journal Title
  
  J. Appl. Phys Vol.99, No.10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Superconductor-based Quantum-dot Light-emitting Diodes (SQ-LED) : Role of Cooper-pairs to Generate Entangled Photon Pairs2006
- Author(s)
  I.Suemune, T.Akazaki, K.Tanaka, M.Jo, K.Uesugi, M.Endo, H.Kumano, E.Hanamura, H.Takayanagi, M.Yamanishi, H.Kan
- Journal Title
  
  Japan. J. Appl. Phys Vol. 45, No. 12
  
  Pages: 9264-9271
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Superconductor-based Quantum-dot Light-emitting Diodes (SQ-LED) : Role of Cooper-pairs to Generate Entangled Photon Pairs2006
- Author(s)
  I.Suemune, I.Akazaki, K.Ianaka, M.Jo, K.Uesugi, M.Endo, H.Kumano, E.Hanamura, H.Takayanagi, M.Yamanishi, H.Kan
- Journal Title
  
  Japan. J. Appl. phys Vol. 45, No.12
  
  Pages: 9264-9271
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Application of InGaAs/GaAsN Strain-compensated Superlattice to InAs Quantum Dots2006
- Author(s)
  W.Zhang,K.Uesugi,and I.Suemune
- Journal Title
  
  J. Appl. Phys Vol. 99, No.10
  
  Pages: 1031031-7
- NAID
  120000954316
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Role of a NitrogenPrecursorSuppliedonInAs QuantumDotsSurfacesin TheirEmissionWavelengths2006
- Author(s)
  I.Suemune,G.Sasikala,H.Kumano,K.Uesugi,Y.Nabetani, T. Matsumoto, J.-T. Maeng, and T.-Y. Seong
- Journal Title
  
  Jpn. J. Appl.Phys Vol. 45,No.21
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Role of a NitrogenPrecursorSuppliedonInAs QuantumDotsSurfacesin Their Emission Wavelengths2006
- Author(s)
  I. Suemune, G. Sasikala, H. Kumano, K. Uesugi, Y. Nabetani, T. Matsumoto, J.-T. Maeng, and T. -Y. Seong
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45, No.21
  
  Pages: 529-532
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Improved structural and luminescence homogeneities of InAs quantum dots with nitrogen-precursor supplies on their surfaces2005
- Author(s)
  G.Sasikala, I.Suemune, P.Thilakan, H.Kumano, K.Uesugi, N.Shimoyama, H.Machida
- Journal Title
  
  Jpn.J.Appl.Phys.Lett. 44・50
- Data Source
  KAKENHI-PROJECT-15760232
[Journal Article] Structural and Luminescence Properties of InAs Quantum Dots: Effect of NitrogenExposureonDotSurfaces2005
- Author(s)
  G. Sasikala, I. Suemune, P. Thilakan, H. Kumano, and K. Uesugi,Y.Nabetani,T.MatsumotoandH.Machida
- Journal Title
  
  Jpn.J.Appl.Phys.Lett Vol. 44, No. 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Improved Structural and Luminescence Homogeneities of InAs Quantum Dots with Nitrogen-precursor Supplies on Their Surfaces2005
- Author(s)
  S.Sasikala, I.Suemune, P.Thilakan, H.Kumano, K.Uesugi, Y.Nabetani, T.Matsumoto, H.Machida
- Journal Title
  
  Jpn.J.Appl.Phys.Lett. Vol.44, No.50
- Data Source
  KAKENHI-PROJECT-17068001
[Journal Article] Improved Structural and Luminescence Homogeneities of InAs Quantum Dots with Nitrogen-precursor Supplies on Their Surfaces2005
- Author(s)
  G.Sasikala, I.Suemune, P.Thilakan, H.Kumano, K.Uesugi, Y.Nabetani, T.Matsumoto, H.Machida
- Journal Title
  
  Jpn.J.Appl.Phys.Lett. Vol.44, No.5
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Formation of ohmic contacts to p-type ZnO2004
- Author(s)
  M.Kurimoto, A.B.M.A.Ashrafi, M.Ebihara, K.Uesugi, H.Kumano, I.Suemune
- Journal Title
  
  phys.stat.sol.(b) Vol.241, No.3
  
  Pages: 635-639
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Observation of Clear Negative Differential Resistance Characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs Multiple Quantum Wells at Room Temperature2004
- Author(s)
  K.Uesugi, M.Kurimoto, I.Suemune
- Journal Title
  
  Physica E Vol.21
  
  Pages: 727-731
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures2004
- Author(s)
  S.Ganapathy, P.Thilakan, M.Kurimoto, K.Uesugi, I.Suemune, N.Shimoyama
- Journal Title
  
  Physica E : Low-dimensional Systems and Nanostructures 21・2-4
  
  Pages: 756-760
- Data Source
  KAKENHI-PROJECT-15760232
[Journal Article] Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures2004
- Author(s)
  G.Sasikala, P.Thilakan, M.Kurimoto, H.Kumano, K.Uesugi, I.Suemune
- Journal Title
  
  Physica E Vol.21
  
  Pages: 756-760
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Observation of clear negative diffraction resistance characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs multiple quantum wells at room temperature2004
- Author(s)
  K.Uesugi, M.Kurimoto, I.Suemune, M.Yamamoto, T.Uemura, H.Machida, N.Shimoyama
- Journal Title
  
  Physica E : Low-dimensional Systems and Nanostructures 21・2-4
  
  Pages: 727-731
- Data Source
  KAKENHI-PROJECT-15760232
[Journal Article] Formation of ohmic contacts to p-type ZnO2004
- Author(s)
  M.Kurimoto, A.B.M.A.Ashrafi, M.Ebihara, K.Uesugi, H.Kumano, I.Suemune
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.3
  
  Pages: 635-639
- Data Source
  KAKENHI-PROJECT-15656077
[Journal Article] Observation of Clear Negative Differential Resistance Characteristics in GaAsNSe/GaAs and GaAsNSb/GaAs Multiple Quantum Wells at Room Temperature2004
- Author(s)
  K.Uesugi, M.Kurimoto, I.Suemune
- Journal Title
  
  Physica E Vol.21
  
  Pages: 727-731
- Data Source
  KAKENHI-PROJECT-15656077
[Journal Article] Formation of ohmic contacts to p-type ZnO2004
- Author(s)
  Makoto Kurimoto, A. B. M. Almamun Ashrafi, Masato Ebihara, Katsuhiro Uesugi, Hidekazu Kumano, Ikuo Suemune
- Journal Title
  
  phys. stat. sol.(b) Vol.241, No.3
  
  Pages: 635-639
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106005
[Journal Article] Observation of reflection high-energy electron diffraction oscillation during MOMBE growth of AlAs and related modulated semiconductor structures2004
- Author(s)
  G.Sasikala, P.Thilakan, M.Kurimoto, H.Kumano, K.Uesugi, I.Suemune
- Journal Title
  
  Physica E Vol.21
  
  Pages: 756-760
- Data Source
  KAKENHI-PROJECT-15656077
[Presentation] Growth of self-organized GaAsSb submicron dots on GaAs by metal-organic molecular beam epitaxy2012
- Author(s)
  Takanari Yumi, Kohei Miyazawa, Masataka Sato, and Katsuhiro Uesugi
- Organizer
  International Union of Material Research Society-International Conference in Asia 2012
- Place of Presentation
  BEXCO(韓国,プサン)
- Year and Date
  2012-08-28
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Growth of self-organized GaAsSb submicron dots on GaAs by metal-organic molecular beam epitaxy2012
- Author(s)
  Takanari Yumi, Kohei Miyazawa, Masataka Sato, and Katsuhiro Uesugi
- Organizer
  International Union of Materials Research Society-International Conference in Asia 2012 (IUMRS-ICA 2012)
- Place of Presentation
  BEXCO, Busan, Korea
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Hetero-epitaxial growth process of type-II GaSb/GaAs quantum dot system by metal-organic molecular beam epitaxy2012
- Author(s)
  Katsuhiro Uesugi, Masataka Sato, Kohei Miyazawa, Takanari Yumi, and Hisashi Fukuda
- Organizer
  2012 Materials Research Society Fall Meeting & Exhibit
- Place of Presentation
  Hynes Convention Center, Boston, Massachusetts
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Hetero-epitaxial growth process of type-II GaSb/GaAs quantum dot system by metal-organic molecular beam epitaxy2012
- Author(s)
  Katsuhiro Uesugi, Masataka Sato, Kohei Miyazawa, Takanari Yumi and Hisashi Fukuda
- Organizer
  2012 Material Research Society Fall Meeting & Exhibit
- Place of Presentation
  ハインズコンベンションセンター(アメリカ,ボストン)
- Year and Date
  2012-11-27
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Fabrication of GaSb submicron islands on GaAs using trisdimethylamin oantimony2011
- Author(s)
  植杉克弘
- Organizer
  International Conference on Materials for Advanced Technologies 2011
- Place of Presentation
  サンテックシンガポール国際会議場(シンガポール)
- Year and Date
  2011-06-28
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Fabrication of GaSb submicron islands on GaAs using trisdimethylaminoantimony2011
- Author(s)
  Katsuhiro Uesugi, Tsuyoshi Usui, Takanari Yumi and Afishah Alias
- Organizer
  International Conference on Materials for Advanced Technologies 2011
- Place of Presentation
  サンテックシンガポール国際会議場(シンガポール)
- Year and Date
  2011-06-28
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] MOMBE法によるサブミクロンサイズのGaSbメサ構造の作製2011
- Author(s)
  植杉克弘
- Organizer
  第46回応用物理学会北海道支部学術講演会
- Place of Presentation
  室蘭工業大学(北海道)
- Year and Date
  2011-01-08
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Selective Growth of GaSb Quantum Dots on GaAs Nano-ring Structures by Metalorganic Molecular Beam Epitaxy2011
- Author(s)
  Katsuhiro Uesugi, Takanari Yumi, Tsuyoshi Usui, and Afishah Alias
- Organizer
  12th IUMRS International Conference in Asia
- Place of Presentation
  台北世界貿易中心南港展覧館(台湾)
- Year and Date
  2011-09-20
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] MOMBE法によるサブミクロンサイズのGaSbメサ構造の作製2011
- Author(s)
  臼井強志,弓貴成,植杉克弘
- Organizer
  第46回応用物理学会北海道支部学術講演会
- Place of Presentation
  室蘭工業大学 (北海道)
- Year and Date
  2011-01-08
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Self-limiting growth of submicron-sized GaSb dots on GaAs(001) surface by metalorganic molecular-beam epitaxy2010
- Author(s)
  Katsuhiro Uesugi, Tsuyoshi Usui and Afishah Alias
- Organizer
  The 16th International Conference on Crystal Growth
- Place of Presentation
  北京国際会議場 (中国,北京)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Self-limiting growth of submicron-sized GaSb dots on GaAs(001)surface by metalorganic molecular-beam epitaxy2010
- Author(s)
  植杉克弘
- Organizer
  The 16th International Conference on Crystal Growth
- Place of Presentation
  北京国際会議場(中国,北京)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PROJECT-22656070
[Presentation] Growth ProcessofGaAsCapLayersonGaSb/GaAsQuantumDotSurfaces2007
- Author(s)
  K. Uesugi, M. Sato, Y. Idutsu, and I. Suemune
- Organizer
  19th International Conference on Indium Phosphide and Related Materials (IPRM'07)
- Place of Presentation
  Matsue, Japan
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] Surface Passivation Effect of Electron-beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency2007
- Author(s)
  Y. Idutsu, M. Endo, K. Uesugi, I. Suemune
- Organizer
  19thInternational Conference on Indium Phosphide and Related Materials (IPRM'07)(PB21, Conference Proceedings)
- Place of Presentation
  Matsue, Japan
- Data Source
  KAKENHI-PROJECT-16106005
[Presentation] Role of Cooper Pairs for theGenerationofEntangledPhotonPairsfromSingleQuantum Dots2007
- Author(s)
  I. Suemune, T. Akazaki, K. Tanaka, M. Jo, K. Uesugi, M. Endo, H. Kumano, and E. Hanamura
- Organizer
  Sixth International Conference on Low Dimensional StructuresandDevices(LDSD2007)
- Place of Presentation
  SanAndres,Columbia
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] Surface Passivation Effect of Electron-beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency2007
- Author(s)
  Y. Idutsu, M. Endo, K. Uesugi, and I. Suemune
- Organizer
  19th International Conference on Indium Phosphide and Related Materials (IPRM'07)
- Place of Presentation
  Matsue, Japan
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] LO Photon-Plasmon Coupled Modes and Carrier Mobilities in Heavily Se-doped Ga(As, N) Thin Films2007
- Author(s)
  J.Ibanez,E.Alarcon-Llado,R.Cusco,L.Artus,D.Fowler, A. Patane, K. Uesugi, and I. Suemune
- Organizer
  The International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA2007)
- Place of Presentation
  London
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] Growth Process of GaAs Cap Layers on GaSb/GaAs Quantum Dot Surfaces2007
- Author(s)
  K. Uesugi, M. Sato, Y. Idutsu, I. Suemune
- Organizer
  19th International Conference on Indium Phosphide and Related Materials (IPRM'07)(ThA1-4)
- Place of Presentation
  Matsue, Japan
- Data Source
  KAKENHI-PROJECT-16106005
[Presentation] Influence ofStrain Modulations in CappingLayersof InAsQuantum Dots withCompressive-InGaAsandTensile-GaAsNLayerStructures2006
- Author(s)
  WeiZhang,KatsuhiroUesugi,andIkuoSuemune
- Organizer
  TMS2006ElectronicMaterialsConference
- Place of Presentation
  PennsylvaniaState University, PA, USA
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] Strain-compensation of InAs Quantum Dots: Dot Size Dependence2005
- Author(s)
  W.Zhang, K.Uesugi, N.Matsumura, and I.Suemune
- Organizer
  InternationalConferenceonQuantumElectronics 2005 and the Pacific Rim Conference on Lasers and Electro-Optics2005(IQEC/CLEO-PR2005)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] Bright Luminescence from InAs/GaAs Open Quantum Dots at Room Temperature : Dependence on GaAs Surface Reconstructions2005
- Author(s)
  K. Uesugi, W. Zhang, I. Suemune
- Organizer
  The 23rd International Conference onDefects in Semiconductors (ICDS-23)
- Place of Presentation
  Awaji Island, Hyogo, Japan
- Data Source
  KAKENHI-PROJECT-16106005
[Presentation] BrightLuminescence from InAs/GaAs Open Quantum Dots at Room Temperature : Dependence on GaAs Surface Reconstructions2005
- Author(s)
  K.Uesugi,W.Zhang,andI.Suemune
- Organizer
  The 23rd International Conference on Defects in Semiconductors(ICDS-23)
- Place of Presentation
  Awaji Island, Hyogo
- Data Source
  KAKENHI-PROJECT-17068001
[Presentation] Role of Nitrogen onEmission Wavelength of InAs Quantum Dots : InAs/GaAs Interfaces and Strain-compensating GaAsN Burying Layers2005
- Author(s)
  I. Suemune, G. Sasikala, K. Uesugi, N. Matsumura,Y. Nabetani, T. Matsumoto
- Organizer
  Symposium on Dilute Nitride Semiconductors : from Atomsto Devices.
- Place of Presentation
  APS March Meeting(LA)
- Data Source
  KAKENHI-PROJECT-16106005
[Presentation] Improved Structural Homogeneities and Luminescence Efficiencies of InAs Quantum Dots with Nitridation on Dots Surfaces2005
- Author(s)
  G. Sasikala, I. Suemune,H. Kumano, K. Uesugi, Y.Nabetani, T. Matsumoto
- Organizer
  8th International Symposium on Contemporary Photonics Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-16106005

1. SUEMUNE Ikuo (00112178)

# of Collaborated Projects: 18 results

# of Collaborated Products: 37 results
2. KUMANO Hidekazu (70292042)

# of Collaborated Projects: 11 results

# of Collaborated Products: 16 results
3. NUMAI Takahiro (60261351)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. INOUE Shuichiro (30307798)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SASAKURA Hirotaka (90374595)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. TANAKA Satoru (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 李英根 (70240405)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 山西正道 (30081441)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KURIHARA Kei

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. MACHIDA Hideaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

UESUGI Katsuhiro 植杉 克弘

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Development of InGaSb hole localized quantum dot structure for quantum communicationPrincipal Investigator

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新しいGaNAsSe半導体混晶による波長1.5μm帯広帯域光通信用光源の開発Principal Investigator

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MOVPE法によるZnSe/MgS量子井戸箱の試作研究Principal Investigator

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UESUGI Katsuhiro 植杉克弘