YODO Tokuo 淀徳男

Researcher Number	70288752
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2012 – 2015: 大阪工業大学, 工学部, 教授 2004: Osaka Institute of Technology, Faculty of Engineering, Professor, 工学部, 教授 1997 – 2003: 大阪工業大学, 工学部, 助教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials Except Principal Investigator Inorganic materials/Physical properties
Keywords	Principal Investigator ECRプラズマ / InN / ECR plasma / OEIC / 光電子集積回路 / Si基板 / 六方晶 / 窒化物混晶 / 結晶性 / lattice matching … More / GaAsN alloy / galium nitride / エピタキシャル成長 / 格子不整合 / 格子整合 / residual oxygen concentration / low temperature growth / cubic InN / band gap energy / Optical Electric Integrated Circuits / Nitride alloy / 窒化物混晶半導体 / 酸素不純物 / 残留酸素濃度 / 低温成長 / 立方晶InN / バンドギャップ / Anneal / Crystalline quality / Hexagonal crystal / Nitride alloy crystal / Si substrate / 立方晶 / PL発光 / アニール / プラズマ発光 / Si基盤 / Crystal structure / InGaAsN alloy / As doping / 窒化ガリウムインジウム砒素 / 立方晶窒化ガリウム / プラズマダメージ / シリコン基板表面 / シリコン基板上窒化ガリウム / 窒化インジウム / 窒化インジウムガリウム砒素 / シリコン / ガリウム砒素 / nitride semiconductor / galium arsenide on silicon / epitaxial growth / GaAs_<1-x>N_x / 窒化物 / Gabs_<1-X>N_Y / エピタヤンヤル成長 / 界面電荷整合性 / GaAs on Si / 窒化的半導体 / エピタキシカル砒素 / 窒化カリウム砒素 / 窒化カリウム / シリコン基板上ガリウム砒素 … More Except Principal Investigator ナノインプリント / 表面ナノ修飾基板 / 超機能創出 / 組織制御 / 結晶構造 / 酸化物 / 層状構造 / 固相結晶成長 / 酸化モリブデン / 酸化バナジウム / エピタキシャル成長 / 固相結晶化 / 酸化物薄膜 / 一軸圧縮 / 結晶構造制御 Less

Solid-phase crystallization of oxide thin films on nanoscale-controlled substrates via post-annealing under uniaxial compression for exploring the novel functionalities
- Principal Investigator
  
  Yoshimoto Mamoru
- Project Period (FY)
  2012 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Tokyo Institute of Technology
Five-dimensional alloy growth of AlInGaNAs and fundamental investigation for realizing Opto-Electronic Integurated CircuitsPrincipal Investigator
- Principal Investigator
  
  YODO Tokuo
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka Institute of Technology
Crystal growth of AlInGaNAs 5-alloy nitrides and fundamental investigation for fabricating optoelectronic integration circuitPrincipal Investigator
- Principal Investigator
  
  YODO Tokuo
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka Institute of Technology
Crystal growth of InGaAsN alloy using ECR plasma and basic investigation for realizing OEICPrincipal Investigator
- Principal Investigator
  
  YODO Tokuo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka Instizute of Technology
Crystal growth of GaAsN alloy using ECR plasma and basic investigation for realizing OEICPrincipal Investigator
- Principal Investigator
  
  YODO Tokuo
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka Institute of Technology

All 2004 2003 2002

All Journal Article

[Journal Article] Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer2004
- Author(s)
  Atsushi Sasaki, Jin Liu, Wakana Hara, Shusaku Akiba, Keisuke Saito, Tokuo Yodo
- Journal Title
  
  J Mater.Res. Vol.19, No.9
  
  Pages: 2725-2729
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Influences of In2O3 crystal grains formed by anneal on characteristics of hexagonal InN crystalline films grown on Si(111) substrates2004
- Author(s)
  Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki Harada
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43, No.2A
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Influences of In2O3 crystal grains formed by anneal on characteristics of hexagonal InN crystalline films grown on Si(111) substrates2004
- Author(s)
  Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki Harada
- Journal Title
  
  Jpn.J.Appl.Phys. 43,2A
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] ECR-assisted MBE growth of In1-xGaxN heteroepitaxial films on Si2004
- Author(s)
  Tokuo Yodo, Yasunari Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki Harada
- Journal Title
  
  Superlattices and Microstrucures Vol.36
  
  Pages: 547-561
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer2004
- Author(s)
  Atsushi Sasaki, Jin Liu, Wakana Hara, Shusaku Akiba, Keisuke Saito, Tokuo Yodo, Mamoru Yohimoto
- Journal Title
  
  J Mater.Res. 19,9
  
  Pages: 2725-2729
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer2004
- Author(s)
  Atsushi Sasaki, Jin Liu, Wakana Hara, Shusaku Akiba, Keisuke Saito, Tokuo Yodo, Mamoru Yoshimoto
- Journal Title
  
  J Mater.Res. 19,9
  
  Pages: 2725-2729
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Visible Emissions Near 1.9-2.2 eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy2004
- Author(s)
  Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki, Harada, Kathryn E.Prince, K.Scott A.Butcher
- Journal Title
  
  J.Cryst.Growth 269
  
  Pages: 145-154
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Visible Emissions Near 1.9-2.2 eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy2004
- Author(s)
  Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuld, Harada, Kathryn E.Prince, K.Scott A.Butcher
- Journal Title
  
  J.Cryst.Growth Vol.269
  
  Pages: 145-154
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] ECR-assisted MBE growth of In1-xGaxN heteroepitaxial films on Si2004
- Author(s)
  Tokuo Yodo, Yasunari Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki Harada
- Journal Title
  
  Superlattices and Microstrucures 36
  
  Pages: 547-561
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Visible Emissions Near 1.9-2.2eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy2004
- Author(s)
  Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki, Harada, Kathryn E.Prince, K.Scott A.Butcher
- Journal Title
  
  J.Cryst.Growth 269
  
  Pages: 145-154
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] ECR-assisted MBE growth of In1-xGaxN heteroepitaxial films on Si2004
- Author(s)
  Tokuo Yodo, Yasunari Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki
- Journal Title
  
  Superlattices and Microstrucures 36
  
  Pages: 547-561
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Visible emissions near 2.2eV from InN films grown on Si(111) and sapphire(0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy2003
- Author(s)
  T.Yodo, H.Yona, Y.Harada, A.Sasaki, M.Yoshimoto
- Journal Title
  
  phys.state.sol. (c)0,No.7
  
  Pages: 2802-2805
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma2003
- Author(s)
  H.Yona, Y.Harada, T.Yodo
- Journal Title
  
  phys.state.sol. (c)0,No.7
  
  Pages: 2545-2548
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Low temperature growth of GaN films on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy2003
- Author(s)
  T.Yodo, R.Fujita, M.Yamada, Y.Harada
- Journal Title
  
  22th Electronic Materials Symposium, Laforet Biwako, Moriyama, Shiga, Extended Abstracts 22
  
  Pages: 191-192
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Characterization of polycrystalline GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma2003
- Author(s)
  T.Yodo, T.Hirano, Y.Harada
- Journal Title
  
  Polycrystalline Semiconductors VII, Solid State Phenomena (edited by T.Fuyuki et.al.) 93
  
  Pages: 307-312
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Low temperature growth of GaN films on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy2003
- Author(s)
  T.Yodo, R.Fujita, M.Yamada, Y.Harada
- Journal Title
  
  22th Electronic Materials Symposium, Laforet Biwako, Moriyama, Shiga, Extended Abstracts F14
  
  Pages: 191-192
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Visible emissions near 2.2 eV from InN films grown on Si(111) and sapphire(0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy2003
- Author(s)
  T.Yodo, H.Yona, Y.Harada, A.Sasaki, M.Yoshimoto
- Journal Title
  
  phys.state.sol. (c)0,No.7
  
  Pages: 2802-2805
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy2003
- Author(s)
  T.Yodo, H.Yona, Y.Harada, A.Sasaki, M.Yoshimoto
- Journal Title
  
  phys.state.sol.(c) 0,No.7
  
  Pages: 2802-2805
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma2003
- Author(s)
  H.Yona, Y.Harda, T.Yodo
- Journal Title
  
  phys.state.sol.(c) 0,No.7
  
  Pages: 2545-2548
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma2003
- Author(s)
  H.Yona, Y.Harda, T.Yodo
- Journal Title
  
  phys.state.sol. (c)0,No.7
  
  Pages: 2545-2548
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Characterization of polycrystalline GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma2002
- Author(s)
  T.Yodo, T.Hirano, Y.Harada
- Journal Title
  
  Polycrystalline Semiconductors VII, Solid State Phenomena (edited by T.Fuyuki et al.) Vol.93
  
  Pages: 307-312
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560284
[Journal Article] Characterization of polycrystalline GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma2002
- Author(s)
  T.Yodo, T.Hirano, Y.Harada
- Journal Title
  
  Polycrystalline Semiconductors VII, Solid State Phenomena (edited by T.Fuyuki et al.) 93
  
  Pages: 307-312
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560284

1. Yoshimoto Mamoru (20174998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. MATSUDA Akifumi (80621698)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

YODO Tokuo 淀 徳男

Research Projects

Research Products

Co-Researchers

Solid-phase crystallization of oxide thin films on nanoscale-controlled substrates via post-annealing under uniaxial compression for exploring the novel functionalities

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Five-dimensional alloy growth of AlInGaNAs and fundamental investigation for realizing Opto-Electronic Integurated CircuitsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth of AlInGaNAs 5-alloy nitrides and fundamental investigation for fabricating optoelectronic integration circuitPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth of InGaAsN alloy using ECR plasma and basic investigation for realizing OEICPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth of GaAsN alloy using ECR plasma and basic investigation for realizing OEICPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Influences of In2O3 crystal grains formed by anneal on characteristics of hexagonal InN crystalline films grown on Si(111) substrates2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Influences of In2O3 crystal grains formed by anneal on characteristics of hexagonal InN crystalline films grown on Si(111) substrates2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] ECR-assisted MBE growth of In1-xGaxN heteroepitaxial films on Si2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer2004

Author(s)

Journal Title

Data Source

[Journal Article] Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Visible Emissions Near 1.9-2.2 eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy2004

Author(s)

Journal Title

Data Source

[Journal Article] Visible Emissions Near 1.9-2.2 eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] ECR-assisted MBE growth of In1-xGaxN heteroepitaxial films on Si2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Visible Emissions Near 1.9-2.2eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy2004

Author(s)

Journal Title

YODO Tokuo 淀徳男