MACHIDA Nobuya 町田信也

Researcher Number	70313335
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2007: 東工大, 理工学研究科, 助手 2006: Tokyo Institute of Technology, Department of Physical Electronics, Assistant Prof., 大学院理工学研究科, 助手 2000 – 2005: Graduate School of Science and Engineering TOKYO INSTITUTE OF TECHNOLOGY Research Assistant, 大学院・理工学研究科, 助手 1999: 東京工業大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 Except Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Electronic materials/Electric materials
Keywords	Principal Investigator ホットエレクトロン / 半導体 / semiconductor / quantum effect device / electron interference / phase correlation function / structural inhomogeneity / phase coherence / resonant tunneling diode / hot electron … More / 構造不均一 / 量子効果デバイス / 電子波干渉 / 位相相関法 / 構造不均一性 / 位相コヒーレンス / 共鳴トンネルダイオード / silicon on glass / oxide interface / silicon / large grain size / thinfilm transistors / re-crystallization / polycrystalline silicon / excimer laser annealing / phase shift / エキシマレーザ / Siグレイン / TFT / ELA / Re-crystallization / Poly-Si / Excimer laser / Phase Shift / 電子波回析 / エミッタ充電時間 / ヘテロ接合バイポーラトランジスタ / ホットエレクトロトランジスタ / バリスティック伝導 / 弾道電子放出顕微鏡 / 走査型トンネル顕微鏡 / 量子構造 / BEEM / 位相シフタ / 回折 / 時間領域 / 数値シミュレーション / 電子波 … More Except Principal Investigator InP / Double Barrier Resonant Emitter / Attractive Potential / OMVPE Embedding Tungsten / Lateral Coherence / Coherent Emitter / Biprism / Electron Wave / Tungsten Wire / ホットエレクトロン / 引力ポテンシャル / コヒーレントエミッタ / Kirk effect / Collector transit time / Narrow emitter / Collector capacitance / Ballistic electron / Electron beam lithography / Heterojunction bipolar transistor / ヘテロ接合バイポーラトランジスタ / カーク効果 / コレクタ走行時間 / 極小エミッタ / コレクタ容量 / バリステック電子走行 / 電子線リソグラフィー / ヘテロ接合バイポーラトランジ / FDTD method for quantum mechanics / Fourier Transformation by electron wave / quantum effect device / reciprocity principle / BEEM / electron diffraction / hot electron / scanning probe / 半導体 / バリシティック電子輸送 / 位相シフタ / 波面 / 量子相反性 / 弾道電子放出顕微鏡 / 電子波フーリエ変換デバイス / 相反原理 / 電子波回折 / 量子FDTD法 / 電子波フーリエ交換デバイス / 量子効果デバイス / 相反性 / 弾道電子放出顕微鏡(BEEM) / 電子波回析 / 走査プローブ / コヒーレンス性 / 微細タングステン細線 / 量子干渉デバイス / 電子波バイプリズム / GaAs MOVPE / タングステンパック / 埋め込みタングステン細線 / free-standing wire / タングステンスパッタ / OMVPE / 埋め込み金属ホットエレクトロントランジスタ / 固体バイプリズム / タングステン細線埋込 / ステンシルリフトオフ法 / 電子波干渉 / 埋め込み金属細線 / メタルステンシル法 / ホットエレクトロンエミッタ / 量子ビーム伝搬法 / 引力ポテンシャル場 / ダブルバリア共鳴電子エミッタ / OMVPEタングステン埋込 / 横コヒーレンス / バイプリズム / 電子波 / タングステン細線 Less

走査型トンネル顕微鏡によるバリスティックホットエレクトロンデバイスの基礎研究Principal Investigator
- Principal Investigator
  
  町田信也
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Research for ultra-fast operation of InP HBT by ballistic transportation in collector
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Separate Evaluation of Electron Coherence Influence Factors in Quantum Device by Resonant Tunneling StructuresPrincipal Investigator
- Principal Investigator
  
  MACHIDA Nobuya
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
固体中電子波面変換機能の時間領域シミュレーションPrincipal Investigator
- Principal Investigator
  
  町田信也
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Twin Grain Thin Film TransistorsPrincipal Investigator
- Principal Investigator
  
  MACHIDA Shinya, 松村正清
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Quantum Interference Devices Controlled by Metals Buried in Semiconductors
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY

All 2006 2005 2004 2003

All Journal Article Patent

[Journal Article] Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into account2006
- Author(s)
  N.Machida et al.
- Journal Title
  
  Surface Science 600
  
  Pages: 4843-4847
- Data Source
  KAKENHI-PROJECT-18560328
[Journal Article] Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism2006
- Author(s)
  Nobuya Machida
- Journal Title
  
  Jpn.J.Appl.Phys. 45・35
- NAID
  210000062057
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism2006
- Author(s)
  Nobuya Machida
- Journal Title
  
  Jpn. J. Appl. Phys. 45・35
- NAID
  210000062057
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism2006
- Author(s)
  N.Machida et al.
- Journal Title
  
  Japanese Journal of Applied Physics 45・35
- NAID
  210000062057
- Data Source
  KAKENHI-PROJECT-18560328
[Journal Article] Minimum emitter charging time for heterojunction bipolar transistors2006
- Author(s)
  N.Machida et al.
- Journal Title
  
  The 18th Indium Phosphide and Related Materials Conference (IPRM2006)
- Data Source
  KAKENHI-PROJECT-18560328
[Journal Article] Minimum Emitter Charging Time for Heterojunction Bipolar Transistors2006
- Author(s)
  Nobuya Machida
- Journal Title
  
  International Conference on Indium Phoshide and Related (発表予定)
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope2004
- Author(s)
  N.Machida, H.Kanoh, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.43, no.11A
  
  Pages: 7390-7394
- NAID
  10014029694
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560291
[Journal Article] Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope2004
- Author(s)
  N.Machida et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7390-7394
- NAID
  10014029694
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Numerical Foundation of Hot-Electron Diffraction Experiment2004
- Author(s)
  N.Machida et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43・11A
  
  Pages: 7390-7394
- Data Source
  KAKENHI-PROJECT-15560291
[Journal Article] Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope2004
- Author(s)
  N.Machida, H.Kanoh, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.43, no.11A
  
  Pages: 7390-7394
- NAID
  110003175542
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope2004
- Author(s)
  N.Machida et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43・11A
  
  Pages: 7390-7394
- NAID
  10014029694
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscone2004
- Author(s)
  N.Machida, et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7390-7394
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560291
[Journal Article] Young's double-slit interference experiment of hot electron in semi-conductors(invited talk)2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  Japan-UK 10+10 Meeting
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  6th International Conference on New Phenomena in Mesoscopic Systems & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices,1.6,Hawaii
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560291
[Journal Article] Young's Double-Slit Interference Observation of Hot Electrons in semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  Physical Review Letters vol.19, no.21
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560291
[Journal Article] InP Hot Electron Transistors with a Buried Metal Gate2003
- Author(s)
  Y.Miyamoto, R.Yamamoto, H.Maeda, K.Takeuchi, N.Machida, L.Wernersson, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.42, no.12
  
  Pages: 7221-7226
- NAID
  10011839800
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560291
[Journal Article] Young's Double-Slit Interference of Hot Electron in Semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  13th International Conference on Non-equilibrium Carrier Dynamics in Semiconductors (HCIS 13), Th11.17, Modena
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  6th International Conference on New Phenomena in Mesoscopic Systems & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, 1.6, Hawaii
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Patent] ホットエレクトロントランジスタ2005
- Inventor(s)
  宮本, 古屋, 浅田, 町田
- Industrial Property Rights Holder
  東工大
- Industrial Property Number
  2005-334326
- Filing Date
  2005-11-18
- Data Source
  KAKENHI-PROJECT-16360170
[Patent] ホットエレクトロントランジスタ2005
- Inventor(s)
  宮本, 古屋, 浅田, 町田
- Industrial Property Rights Holder
  東工大
- Industrial Property Number
  2005-334326
- Filing Date
  2005-11-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170

1. MIYAMOTO Yasuyuki (40209953)

# of Collaborated Projects: 4 results

# of Collaborated Products: 3 results
2. FURUYA Kazuhito (40092572)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
3. SUHARA Michihiko (80251635)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. UCHIDA Yasutaka (80134823)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. ODA Shunri (50126314)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 松村正清 (30110729)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 畑谷成郎 (90302942)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. MIMURA Akio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

MACHIDA Nobuya 町田 信也

Research Projects

Research Products

Co-Researchers

走査型トンネル顕微鏡によるバリスティックホットエレクトロンデバイスの基礎研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research for ultra-fast operation of InP HBT by ballistic transportation in collector

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Separate Evaluation of Electron Coherence Influence Factors in Quantum Device by Resonant Tunneling StructuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

固体中電子波面変換機能の時間領域シミュレーションPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Twin Grain Thin Film TransistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Quantum Interference Devices Controlled by Metals Buried in Semiconductors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Transfer efficiency in ballistic electron emission microscopy taking diffraction of emitted hot electrons into account2006

Author(s)

Journal Title

Data Source

[Journal Article] Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism2006

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism2006

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism2006

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Minimum emitter charging time for heterojunction bipolar transistors2006

Author(s)

Journal Title

Data Source

[Journal Article] Minimum Emitter Charging Time for Heterojunction Bipolar Transistors2006

Author(s)

Journal Title

MACHIDA Nobuya 町田信也

[Patent] ホットエレクトロントランジスタ2005