Matsuda Toshihiro 松田敏弘

… Alternative Names

MATSUDA Toshihiro 松田敏弘

Less

Researcher Number	70326073
Other IDs
Affiliation (based on the past Project Information) *help	2013 – 2019: 富山県立大学, 工学部, 教授 2008 – 2010: Toyama Prefectural University, 工学部, 教授 2005 – 2006: 富山県立大学, 工学部, 教授 2004: Toyama Prefectural University, Faculty of Engineering, Associate Professor, 工学部, 助教授 2003: 富山県立大学, 工学部・電子情報工学科, 助教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 発光 / 透明電極 / イオン・ビーム・スパッタ / エレクトロルミネッセンス / MOS容量 / イオン注入 / MOS / シリコン / Transparent electrode / Ion beam sputtering … More / Electroluminescence / MOS capacitor / Ion implantation / 希土類 / 半導体 / 電気・電子材料 / ＭＯＳ / Light emission / Lieht emission Less

Research on ultraviolet and blue light emitting MOS device with rare earth oxide compatible with LSI processPrincipal Investigator
- Principal Investigator
  
  Matsuda Toshihiro
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyama Prefectural University
Visible and ultraviolet light emitting MOS device with rare earth oxide layerPrincipal Investigator
- Principal Investigator
  
  Matsuda Toshihiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyama Prefectural University
MOS Structure with Si-Implanted Oxide for Light Emitting Device Embedded in LSIPrincipal Investigator
- Principal Investigator
  
  MATSUDA Toshihiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyama Prefectural University
Blue electroluminescence device by MOS structure with Si-implanted SiO_2Principal Investigator
- Principal Investigator
  
  MATSUDA Toshihiro
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyama Prefectural University
Visible electroluminescence device by MOS structure with Si-implanted SiO_2Principal Investigator
- Principal Investigator
  
  MATSUDA Toshihiro
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyama Prefectural University

[Journal Article] Electroluminescence of Si Based MOS Device with Ternary Rare Earth Doped Oxide2020
- Author(s)
  T. Tomita, T. Matsuda, H. Iwata, and T. Ohzone
- Journal Title
  
  Proc. IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
  
  Volume: 2020 Pages: 705-707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06270
[Journal Article] Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon2018
- Author(s)
  Matsuda Toshihiro、Hattori Fumihiro、Iwata Hideyuki、Ohzone Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FH05-04FH05
- DOI
  10.7567/jjap.57.04fh05
- NAID
  210000148943
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06270
[Journal Article] Electroluminescence Color Tuning between Green and Red in MOS Devices Fabricated by Spin-coating of (Tb + Eu) Organic Compounds on Si2017
- Author(s)
  T. Matsuda, F. Hattori, H. Iwata, and T. Ohzone
- Journal Title
  
  Ext. Abst. International Conference on Solid State Devices and Materials
  
  Volume: 2017 Pages: 99-100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06270
[Journal Article] Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon2016
- Author(s)
  T. Ohzone, T. Matsuda, R. Fukuoka, F. Hattoriand and H. Iwata
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 8 Pages: 082102-1
- DOI
  10.7567/jjap.55.082102
- NAID
  210000146933
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06270
[Journal Article] Ultraviolet and white electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of gadolinium organic compounds on silicon2014
- Author(s)
  T. Ohzone, T. Matsuda, S. Saito, and H. Iwata
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 1 Pages: 014101-014101
- DOI
  10.7567/jjap.53.014101
- NAID
  210000143239
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420293
[Journal Article] UV and Visible range Electroluminescence from MOS Devices Fabricated by Spin-Coating of Gd/Dy Organic Compound Films on Silicon2013
- Author(s)
  T. Matsuda, S. Saito, H. Iwata, and T. Ohzone
- Journal Title
  
  Ext. Abst. International Conference on Solid State Devices and Materials
  
  Volume: 2013 Pages: 228-229
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420293
[Journal Article] Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide2009
- Author(s)
  T. Matsuda, S. Ishimaru, S. Nohara, H. Iwata, K. Komoku, T. Morishita, T. Ohzone
- Journal Title
  
  IEICE Transactions on Electronics vol.E92-C, no.12
  
  Pages: 1523-1530
- NAID
  10026824021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560307
[Journal Article] Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide2009
- Author(s)
  松田敏弘
- Journal Title
  
  IEICE Transactions on Electronics E92
  
  Pages: 1523-1530
- NAID
  10026824021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560307
[Journal Article] Electric Characteristics of MOS capacitors with Si-implanted SiO_22006
- Author(s)
  T.Matsuda
- Journal Title
  
  2007 Joint conference of Hokuriku chapter of Electrical Societies
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560289
[Journal Article] SiドープMOS容量の電気的特性2006
- Author(s)
  松田敏弘他
- Journal Title
  
  電気関係学会北陸支部連合大会論文集
- Data Source
  KAKENHI-PROJECT-17560289
[Journal Article] SiドープMOS容量の電気的特性2006
- Author(s)
  松田敏弘他
- Journal Title
  
  電気関係学会北陸支部連合大会論文集
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560289
[Journal Article] Electrolumineseence from MOS capacitors with Si implanted oxide on p-type and n-type Si substrate2005
- Author(s)
  T.Matsuda
- Journal Title
  
  International Conference on Solid State Devices and Materials
  
  Pages: 328-329
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560289
[Journal Article] Electroluminescence from MOS capacitors with Si implanted oxide on p-type and n-type Si substrate2005
- Author(s)
  T.Matsuda
- Journal Title
  
  International Conference on Solid State Devices and Materials
  
  Pages: 328-329
- NAID
  10022541835
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560289
[Journal Article] Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_22004
- Author(s)
  Matsuda, T.
- Journal Title
  
  Solid-State Electronics 48-10・11
  
  Pages: 1933-1941
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Blue electroluminescence from MOS capacitors with Si-implanted SiO_22004
- Author(s)
  T.Matsuda
- Journal Title
  
  Solid-State Electronics 48-10・11
  
  Pages: 1933-1941
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_22003
- Author(s)
  T.Matsuda
- Journal Title
  
  Proc. International Semiconductor Device Research Symposium
  
  Pages: 94-95
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Blue Electroluminescence from MOS Capacitors with Si-Implanted SiO_22003
- Author(s)
  Matsuda, T.
- Journal Title
  
  Proc. International Semiconductor Device Research Symposium
  
  Pages: 94-95
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_22002
- Author(s)
  Matsuda, T.
- Journal Title
  
  IEICE Transactions on Electronics E85-C
  
  Pages: 1985-1904
- NAID
  110003223390
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_22002
- Author(s)
  T.Matsuda
- Journal Title
  
  IEICE Transactions on Electronics E85-C
  
  Pages: 1895-1904
- NAID
  110003223390
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_2 under dynamic operation2001
- Author(s)
  Matsuda, T.
- Journal Title
  
  IEEE International Electron Devices Meeting (IEDM) Tech. Dig.
  
  Pages: 167-170
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Journal Article] Visible electroluminescence from MOS capacitors with Si-implanted SiO_2 under dynamic operation2001
- Author(s)
  T.Matsuda
- Journal Title
  
  IEEE International Electron Devices Meeting (IEDM) Tech.Dig.
  
  Pages: 167-170
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560280
[Presentation] Electroluminescence of Si Based MOS Device with Ternary Rare Earth Doped Oxide2020
- Author(s)
  T. Tomita, T. Matsuda, H. Iwata, and T. Ohzone
- Organizer
  IEEE Electron Devices Technology and Manufacturing Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06270
[Presentation] 複数の元素を導入した希土類MOS型発光素子の特性解析2018
- Author(s)
  冨田匠、服部史空、松田敏弘、岩田栄之、大曽根隆志
- Organizer
  2018年度電気関係学会北陸支部連合大会
- Data Source
  KAKENHI-PROJECT-16K06270
[Presentation] Electroluminescence Characteristics of Rare Earth Doped Silicon Based Light Emitting Device2017
- Author(s)
  F. Hattori, H. Iwata, T. Matsuda and T. Ohzone
- Organizer
  IEEE Electron Devices Technology and Manufacturing Conference
- Place of Presentation
  Toyama, Japan
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06270
[Presentation] Electroluminescence Color Tuning between Green and Red in MOS Devices Fabricated by Spin-coating of (Tb + Eu) Organic Compounds on Si2017
- Author(s)
  T. Matsuda, F. Hattori, H. Iwata, and T. Ohzone
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06270
[Presentation] Tb/Eu とGd を導入した酸化膜を持つシリコン系発光素子の発光特性解析2016
- Author(s)
  服部史空，福岡涼平，松田敏弘，岩田栄之，大曽根隆志
- Organizer
  電気関係学会北陸支部連合大会
- Place of Presentation
  福井工業大学（福井市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K06270
[Presentation] Tb系酸化膜を持つシリコン系発光素子の発光特性解析2015
- Author(s)
  福岡涼平, 服部史空, 松田敏弘, 岩田栄之, 大曽根隆志
- Organizer
  電気関係学会北陸支部連合大会
- Place of Presentation
  金沢工業大学
- Year and Date
  2015-09-12
- Data Source
  KAKENHI-PROJECT-25420293
[Presentation] UV and Visible range Electroluminescence from MOS Devices Fabricated by Spin-Coating of Gd/Dy Organic Compound Films on Silicon2013
- Author(s)
  T. Matsuda
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-25420293
[Presentation] Siイオン注入型発光素子の電気的および発光特性2010
- Author(s)
  野原慎吾, 松田敏弘, 岩田栄之
- Organizer
  電気関係学会北陸支部連合大会
- Place of Presentation
  福井工業高等専門学校
- Year and Date
  2010-09-11
- Data Source
  KAKENHI-PROJECT-20560307
[Presentation] Siイオンを注入したMOS型発光素子の電気的および発光特性2009
- Author(s)
  野原慎吾, 松田敏弘, 岩田栄之
- Organizer
  電気関係学会北陸支部連合大会
- Place of Presentation
  北陸先端科学技術大学院大学
- Year and Date
  2009-09-12
- Data Source
  KAKENHI-PROJECT-20560307
[Presentation] Spectrum Analysis of Electroluminescence from MOS Capacitors with Si-Implanted SiO22009
- Author(s)
  松田敏弘
- Organizer
  International Semiconductor Device Research Symposium(ISDRS)
- Place of Presentation
  University of Maryland(米国)
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-20560307
[Presentation] Spectrum Analysis of Electroluminescence from MOS Capacitors with Si-ImplantedSiO22009
- Author(s)
  T.Matsuda, S.Nohara, S. Hase, H.Iwata, T. Ohzone
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  University of Maryland
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-20560307
[Presentation] Siイオンを注入したMOS 型発光素子の電気的および発光特性2008
- Author(s)
  石丸真佑, 松田敏弘, 岩田栄之
- Organizer
  電気関係学会北陸支部連合大会
- Place of Presentation
  富山大学
- Year and Date
  2008-09-13
- Data Source
  KAKENHI-PROJECT-20560307
[Presentation] Electroluminescence from MOS Devices with (Tb + Ba) Doped Oxide under DC and Pulse Voltage
- Author(s)
  R. Fukuoka, T. Matsuda, H. Iwata, and T. Ohzone
- Organizer
  19th International Conference on Ternary and Multinary Compounds
- Place of Presentation
  Niigata, Japan
- Year and Date
  2014-09-01 – 2014-09-05
- Data Source
  KAKENHI-PROJECT-25420293
[Presentation] 希土類を導入したMOS型発光素子の直流および交流発光特性解析
- Author(s)
  福岡涼平，松田敏弘，岩田栄之，大曽根隆志
- Organizer
  電気関係学会北陸支部連合大会
- Place of Presentation
  富山高等専門学校（冨山県射水市）
- Year and Date
  2014-09-11 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420293

1. IWATA Hideyuki (80223402)

# of Collaborated Projects: 5 results

# of Collaborated Products: 19 results
2. IWATSUBO Satoshi (30416127)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. OHZONE Takashi (60223822)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Matsuda Toshihiro 松田 敏弘

MATSUDA Toshihiro 松田 敏弘

Research Projects

Research Products

Co-Researchers

Research on ultraviolet and blue light emitting MOS device with rare earth oxide compatible with LSI processPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Visible and ultraviolet light emitting MOS device with rare earth oxide layerPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

MOS Structure with Si-Implanted Oxide for Light Emitting Device Embedded in LSIPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Blue electroluminescence device by MOS structure with Si-implanted SiO_2Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Visible electroluminescence device by MOS structure with Si-implanted SiO_2Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Electroluminescence of Si Based MOS Device with Ternary Rare Earth Doped Oxide2020

Author(s)

Journal Title

Data Source

[Journal Article] Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Electroluminescence Color Tuning between Green and Red in MOS Devices Fabricated by Spin-coating of (Tb + Eu) Organic Compounds on Si2017

Author(s)

Journal Title

Data Source

[Journal Article] Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon2016

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Ultraviolet and white electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of gadolinium organic compounds on silicon2014

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] UV and Visible range Electroluminescence from MOS Devices Fabricated by Spin-Coating of Gd/Dy Organic Compound Films on Silicon2013

Author(s)

Journal Title

Data Source

[Journal Article] Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Electric Characteristics of MOS capacitors with Si-implanted SiO_22006

Author(s)

Journal Title

Description

Data Source

Matsuda Toshihiro 松田敏弘

MATSUDA Toshihiro 松田敏弘