KAGESHIMA Hiroyuki 影島博之

… Alternative Names

影島博之カゲシマヒロユキ

Less

Researcher Number	70374072
Other IDs
Affiliation (Current)	2025: 島根大学, 学術研究院理工学系, 教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 島根大学, 学術研究院理工学系, 教授 2018: 島根大学, 学術研究院理工学系, 教授 2016 – 2017: 島根大学, 総合理工学研究科, 教授 2014 – 2016: 島根大学, 総合理工学研究科(研究院), 教授 2012: 日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 主任研究員 … More 2012: 日本電信電話株式会社ＮＴＴ物性科学基礎研究所, 量子電子物性研究部, 主任研究員 2007 – 2012: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主任研究員 2009: 日本電信電話株式会社 NTT物性科学基礎研究所, 量子電子物性研究部, 主任研究員 2008: 日本電信電話株式会社, NTT物性科学基礎研究所・量子電子物性研究部, 主任研究員 2007 – 2008: 日本電信電話株式会社NTT物性・科学基礎研究所, 量子電子物性研究部, 主任研究員 2006: 日本電信電話株式会社, NTT物性科学基礎研究所量子電子物性研究部, 主任研究員 Less
Review Section/Research Field	Principal Investigator Nanostructural science Except Principal Investigator Nanomaterials/Nanobioscience / Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 28030:Nanomaterials-related / Nanostructural physics / Electron device/Electronic equipment / Microdevices/Nanodevices / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator シュタルク効果 / ELスペクトル / 不純物準位 / IV族半導体 / 谷分離効果 / ＥＬスペクトル / 第一原理計算 / ナノキャパシタ / 誘電率 / ＩＶ族半導体 / ナノ構造 / ナノ構造物性 … More Except Principal Investigator … More グラフェン / ナノ材料 / マイクロ・ナノデバイス / 低エネルギー電子顕微鏡 / 計測工学 / 磁気異方性制御 / 磁性制御 / 表面・界面物性 / 遠赤外線 / プラズモン / 負性微分抵抗 / SiC / 積層接合 / SiC基板 / テラヘルツ / 平坦バンド / MOSトランジスタ / ２次元超格子 / 超流動 / 超伝導 / シリコン / 結晶成長 / 二次元物質 / 二硫化モリブデン / 第一原理計算 / ヘテロ構造 / 化学気相成長 / 六方晶窒化ホウ素 / Pd超薄膜 / 超薄膜 / 非磁性遷移金属超薄膜 / 磁気機能制御 / 量子井戸構造 / 磁性 / 遷移金属 / 磁化制御 / Pd, Pt超薄膜 / 磁化の歪みによる制御 / 磁化の電気的制御 / 歪みによる磁化制御 / 電場による磁化制御 / 強磁性発現 / Pt薄膜 / Pd薄膜 / 配向超薄膜 / 量子井戸 / 電子デバイス・機器 / ナノコンタクト / 異種機能集積化 / 電子デバイス / 環境制御チャンバー / 表面構造制御 / 赤外線加熱 / 集積化デバイス / トランジスタ / 成長機構 / バンドギャップ / ホール素子 / インターカレーション / キャリア移動度 / 量子ホール効果 / 電気伝導特性 / シリコンカーバイド / ナノ構造物性 / ナノギャップ電極 / フリースタンディングナノ粒子 / 軌道角運動量 / ナノワイヤー / バンド計算 / ESR測定 / XMCD測定 / 5d遷移金属ナノ粒子 / 強磁性スイッチイング / 常磁性 / 第1原理計算 / 電気二重層 / 不均一ひずみ / ナノ磁性体 / 光誘起強磁性 / 電界印加誘起強磁性 / 金属ナノ粒子 / 電子構造計算 / 非磁性-強磁性転移 / 5d遷移金属 / 4d / 強磁性誘起 / ナノ多機能材料 / マイクロ・ナのデバイス / 自己拡散 / シリコン酸窒化 / 計算物理 Less

Superconductivity based on Si MOS structure
- Principal Investigator
  
  小野行徳
- Project Period (FY)
  2022 – 2026
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Shizuoka University
Design of 2D heterostructures by crystal growth
- Principal Investigator
  
  Hibino Hiroki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 28030:Nanomaterials-related
- Research Institution
  Kwansei Gakuin University
エピタキシャルグラフェンを用いた高出力テラヘルツLEDの実現
- Principal Investigator
  
  永瀬雅夫
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  The University of Tokushima
Induction of magnetic function on two-dimensional metal thin film based on quantum well structure and its application
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nanostructural physics
- Research Institution
  Keio University
Study on heterogeneous integration of graphene device
- Principal Investigator
  
  Nagase Masao
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokushima
Control of dielectric function by making nano-scale structure of IV-group semiconductorPrincipal Investigator
- Principal Investigator
  
  KAGESHIMA Hiroyuki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanostructural science
- Research Institution
  NTT Basic Research Laboratories
Controlling of local electro-mechanical properties of few-layer graphen
- Principal Investigator
  
  NAGASE Masao
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  The University of Tokushima
Creation of single-crystal graphene substrate through surface structure control on a wafer scale
- Principal Investigator
  
  HIBINO Hiroki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories
Appearance of ferromagnetism in nanoscaled 4d/5d transition metal induced by electrical, optical and dynamical techniques
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Keio University
Investigation of nano-scale conductance properties of few layer graphene films
- Principal Investigator
  
  NAGASE Masao
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  NTT Basic Research Laboratories
Control of Silicon Nanostructure Oxidation by Nitrogen Doping
- Principal Investigator
  
  UEMATSU Masashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Keio University

[Journal Article] Twist angle dependence of graphene-stacked junction characteristics2024
- Author(s)
  Murakami Hayate、Fukunaga Fumiya、Ohi Motoki、Kubo Kosuke、Nakagawa Takeru、Kageshima Hiroyuki、Ohno Yasuhide、Nagase Masao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 4 Pages: 04SP56-04SP56
- DOI
  10.35848/1347-4065/ad364f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K20960
[Journal Article] Polarized Raman scattering spectroscopy of array of embedded graphene ribbons grown on 4H-SiC(0001)2023
- Author(s)
  Yoshiaki Sekine、Katsuya Oguri、Hiroki Hibino、Hiroyuki Kageshima、Yoshitaka Taniyasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 6 Pages: 065001-065001
- DOI
  10.35848/1882-0786/acd0f1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05670, KAKENHI-PROJECT-21H01768
[Journal Article] Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces2023
- Author(s)
  Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono
- Journal Title
  
  Communications Physics
  
  Volume: 6 Issue: 1
- DOI
  10.1038/s42005-023-01428-1
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K18294, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
[Journal Article] Resistive-switching behavior in stacked graphene diode2023
- Author(s)
  Ohi Motoki、Fukunaga Fumiya、Murakami Hayate、Kageshima Hiroyuki、Ohno Yasuhide、Nagase Masao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SG Pages: SG1031-SG1031
- DOI
  10.35848/1347-4065/acbbd4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K20960
[Journal Article] CVD Growth Mechanism of hBN-Graphene Heterostructure2023
- Author(s)
  影島博之、Shengnan Wang、日比野浩樹
- Journal Title
  
  Journal of the Japanese Association for Crystal Growth
  
  Volume: 50 Issue: 1 Pages: n/a
- DOI
  10.19009/jjacg.50-1-01
- ISSN
  0385-6275, 2187-8366
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05670, KAKENHI-PROJECT-21H01768
[Journal Article] Carbonization-driven motion of Si islands on epitaxial graphene2023
- Author(s)
  Hibino Hiroki、Kageshima Hiroyuki
- Journal Title
  
  Physical Review Materials
  
  Volume: 7 Issue: 5 Pages: 054003-054003
- DOI
  10.1103/physrevmaterials.7.054003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05670, KAKENHI-PROJECT-21H01768
[Journal Article] Theoretical Study on Origin of CVD Growth Direction Difference in Graphene/hBN Heterostructures2023
- Author(s)
  Kageshima Hiroyuki、Wang Shengnan、Hibino Hiroki
- Journal Title
  
  e-J. Surf. Sci. Nanotechnol.
  
  Volume: 21 Issue: 4 Pages: 251-256
- DOI
  10.1380/ejssnt.2023-031
- ISSN
  1348-0391
- Year and Date
  2023-04-15
- Language
  English
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H05670, KAKENHI-PROJECT-21H01768
[Journal Article] Correlation between structures and vibration properties of germanene grown by Ge segregation2021
- Author(s)
  S. Mizuno, A. Ohta, T. Suzuki, H. Kageshima, J. Yuhara, and H. Hibino
- Journal Title
  
  Applied Physic Express
  
  Volume: 14 Issue: 12 Pages: 125501-125501
- DOI
  10.35848/1882-0786/ac3185
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05670, KAKENHI-PROJECT-21H01768, KAKENHI-PROJECT-21K04879
[Journal Article] Theoretical study on role of edge termination for growth direction selectivity in chemical vapor deposition of hBN/graphene heterostructure on Cu surface2021
- Author(s)
  H. Kageshima, S. Wang, and H. Hibino
- Journal Title
  
  Applied Physic Express
  
  Volume: 14 Issue: 8 Pages: 085502-085502
- DOI
  10.35848/1882-0786/ac0ece
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H05670, KAKENHI-PROJECT-21H01768
[Journal Article] Spontaneous Distortion via the Appearance of Ferromagnetism in Pd Ultrathin Films: Observation of an Inverse Mechanism for the Stoner Criterion2018
- Author(s)
  Shunsuke Sakuragi, Hiroo Tajiri, Hiroyuki Kageshima, and Tetsuya Sato
- Journal Title
  
  Physical Review B
  
  Volume: 97 Issue: 21
- DOI
  10.1103/physrevb.97.214421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H01998
[Journal Article] Change in magnetization of ferromagnetic Pd(001) ultrathin films induced by the strain effect of BaTiO32018
- Author(s)
  Yusuke Ban, Katsuyoshi Komatsu, Shunsuke Sakuragi, Tomoyasu Taniyama, Hiroyuki Kageshima, and Tetsuya Sato
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Issue: 14 Pages: 142409-142409
- DOI
  10.1063/1.5020956
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15J00298, KAKENHI-PROJECT-16K14381, KAKENHI-PROJECT-15H01998, KAKENHI-PROJECT-17H03377
[Journal Article] 金微粒子によるSiC上グラフェンの表面増強ラマン散乱2014
- Author(s)
  関根佳明, 日比野浩樹, 小栗克弥, 岩本篤, 永瀬雅夫, 影島博之, 佐々木健一, 赤崎達志
- Journal Title
  
  レーザー研究
  
  Volume: 42 Pages: 652-657
- NAID
  130007897554
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289107
[Journal Article] Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio2013
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Journal Title
  
  Appl. Phys. Expres
  
  Volume: 6 Issue: 5 Pages: 055101-055101
- DOI
  10.7567/apex.6.055101
- NAID
  10031174336
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] First-principles study of silicon-based nanocapacitors2012
- Author(s)
  H. Kageshima and A. Fujiwara
- Journal Title
  
  Phys. Rev. B
  
  Volume: Vol. 85 Issue: 20
- DOI
  10.1103/physrevb.85.205304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Growth and electronic transport properties of epitaxial graphene on SiC(0001)2012
- Author(s)
  H. Hibino, S. Tanabe, S. Mizuno, and H. Kageshima
- Journal Title
  
  J. Phys. D : Appl. Phys.
  
  Volume: 45 Issue: 15 Pages: 154008-154008
- DOI
  10.1088/0022-3727/45/15/154008
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310086
[Journal Article] Physics of epitaxial graphene on SiC(0001)2012
- Author(s)
  H. Kageshima, H. Hibino, and S. Tanabe
- Journal Title
  
  J. Phys. Condens. Matter
  
  Volume: Vol. 24 Issue: 31 Pages: 314215-314215
- DOI
  10.1088/0953-8984/24/31/314215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062, KAKENHI-PROJECT-22310086
[Journal Article] Electrical characterization of bilayer graphene formed by hydrogen intercalation of monolayer graphene on SiC(0001)2012
- Author(s)
  S. Tanabe, Y. Sekine, H. Kageshima, and H. Hibino
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2S Pages: 02BN02-02BN02
- DOI
  10.1143/jjap.51.02bn02
- NAID
  210000140297
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface2011
- Author(s)
  H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 9R Pages: 381-386
- DOI
  10.1143/jjap.50.095601
- NAID
  40019010403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310062, KAKENHI-PROJECT-22310086
[Journal Article] Observation of bandgap in epitaxial bilayer graphene field effect transistor2011
- Author(s)
  S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 4S Pages: 04DN04-04DN04
- DOI
  10.1143/jjap.50.04dn04
- NAID
  210000070405
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310086
[Journal Article] Theoretical study on magnetoelectric and thermoelectric properties for graphene devices2011
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 7R Pages: 95601-95601
- DOI
  10.1143/jjap.50.070115
- NAID
  210000070798
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310062, KAKENHI-PROJECT-22310086
[Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: Vol. 98 Issue: 11
- DOI
  10.1063/1.3360224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Electronic transport properties of top-gated monolayer and bilayer graphene devices on Si2011
- Author(s)
  S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, H. Hibino
- Journal Title
  
  Mater. Res. Soc. Symp. Proc
  
  Volume: 1283 Pages: 675-680
- DOI
  10.1557/opl.2011.675
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC2011
- Author(s)
  S.Tanabe, Y.Sekine, H.Kageshima, M.Nagase, H.Hibino
- Journal Title
  
  MRS Proceedings
  
  Volume: 1283
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Carrier transport mechanism in graphene on SiC(0001)2011
- Author(s)
  S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
- Journal Title
  
  Phys. Rev. B
  
  Volume: 94 Issue: 11 Pages: 115458-115458
- DOI
  10.1103/physrevb.84.115458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310086
[Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] SiC(0001)面上エピタキシャルグラフェンの構造と形成2011
- Author(s)
  影島博之
- Journal Title
  
  信学技報
  
  Volume: 111 Pages: 41-100
- NAID
  110008800057
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Epitaxial graphene growth studied by low-energy electron microscopy and first-principles2011
- Author(s)
  H. Kageshima, H. Hibino, and M. Nagase
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 645-648 Pages: 597-602
- DOI
  10.4028/www.scientific.net/msf.645-648.597
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects2011
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y. Sekine and H. Yamaguchi
- Journal Title
  
  AIP Conf. Proc.
  
  Volume: 1399 Pages: 755-756
- DOI
  10.1063/1.3666596
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310062, KAKENHI-PROJECT-22310086
[Journal Article] Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC2011
- Author(s)
  S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
- Journal Title
  
  MRS Proc.
  
  Volume: 1283
- URL
  http://dx.doi.org/10.1557/opl.2011.675
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Effective Dielectric Constant of Si-nanofilm Channel in the Full Inversion Regime under Field Effect due to Symmetric Double Gat2011
- Author(s)
  H. Kageshima and A. Fujiwara
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: Vol. 1399 Pages: 197-198
- DOI
  10.1063/1.3666323
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] グラフェン2011
- Author(s)
  影島博之
- Journal Title
  
  機能材料
  
  Volume: 32 Pages: 56-62
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Contact conductance measurement of locally suspended graphene on SiC2010
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027014343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Epitaxial few-layer graphene: toward single crystal growth2010
- Author(s)
  H. Hibino, H. Kageshima, M. Nagase
- Journal Title
  
  J. Phys. D (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] SiC 上エピタキシャルグラフェン成長の理論検討2010
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 37 Pages: 190-195
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Contact conductance measurement of locally suspended graphene on SiC2010
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3 Issue: 4 Pages: 045101-045101
- DOI
  10.1143/apex.3.045101
- NAID
  10027014343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices2010
- Author(s)
  S.Tanabe, Y.Sekine, H.Kageshima, M.Nagase, H.Hibino
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10026495507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Study on Thermoelectric Properties of Graphene2010
- Author(s)
  Hiroyuki Kageshima
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  40017341194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] シリコンカーバイド上に成長したエピタキシャルグラフェン2010
- Author(s)
  H.Hibino, S.Tanabe, H.Kageshima
- Journal Title
  
  NEW DIAMOND
  
  Volume: 26(4) Pages: 23-27
- NAID
  40017373901
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Epitaxial few-layer graphene : toward single crystal growth2010
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Journal Title
  
  Journal of Physics D : Applied Physics
  
  Volume: 43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] シリコンカーバイド上のグラフェン成長2010
- Author(s)
  日比野浩樹、影島博之、永瀬雅夫
- Journal Title
  
  NTT技術ジャーナル
  
  Volume: 21(6) Pages: 18-21
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] SiC上エピタキシャルグラフェンの成長と評価2010
- Author(s)
  日比野浩樹、影島博之、田邉真一、永瀬雅夫、水野清義
- Journal Title
  
  固体物理
  
  Volume: 45 Pages: 645-655
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] SiC上エピタキシャルグラフェン成長の理論検討2010
- Author(s)
  影島博之, 他
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 37 Pages: 190-195
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices2010
- Author(s)
  S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, and H. Hibino
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3 Issue: 7 Pages: 075102-075102
- DOI
  10.1143/apex.3.075102
- NAID
  10026495507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310086
[Journal Article] SiC上エピタキシャルグラフェン成長の理論検討2010
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 37 Pages: 190-195
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces2010
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3 Issue: 11 Pages: 115103-115103
- DOI
  10.1143/apex.3.115103
- NAID
  10027442141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006, KAKENHI-PROJECT-22310062
[Journal Article] Epitaxial graphene growth studied by low-energy electron microscopy and first-principles2010
- Author(s)
  H.Kageshima, H.Hibino, M.Nagase
- Journal Title
  
  Materials Science Forum 645-648
  
  Pages: 597-602
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001)surfaces2010
- Author(s)
  H.Kageshima, H.Hibino, M.Nagase, Y.Sekine, H.Yamaguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027442141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Contact Conductance Measurement of Locally Suspended Graphene on SiC2010
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
- Journal Title
  
  Appl. Phys. Express 3
  
  Pages: 45101-45101
- NAID
  10027014343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] 単結晶グラフェン基板の創製に向けたSiC上エピタキシャル少数層グラフェンの層数解析2010
- Author(s)
  日比野浩樹、影島博之、永瀬雅夫
- Journal Title
  
  Journal of the Vacuum Society of Japan 53
  
  Pages: 101-108
- NAID
  10026292473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Atomic Structure and Physical Properties of Epitaxial Graphene Islands embedded in SiC(0001)Surfaces2010
- Author(s)
  Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, Hiroshi Yamaguchi
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 3
- NAID
  10027442141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310062
[Journal Article] Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles2010
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
- Journal Title
  
  Materials Science Forum
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Graphene growth on silicon carbide2010
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Journal Title
  
  NTT Technical Review
  
  Volume: 18(8) Pages: 1-6
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces2010
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y.Sekine, and H. Yamaguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 3 Pages: 115103-115103
- NAID
  10027442141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Contact Conductance Measurement of Locally Suspended Graphene on SiC2010
- Author(s)
  Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi
- Journal Title
  
  Appl.Phys.Express 3
- NAID
  10027014343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] SiC 上エピタキシャルグラフェンの成長と評価2010
- Author(s)
  日比野浩樹, 影島博之, 田邉真一, 永瀬雅夫
- Journal Title
  
  固体物理
  
  Volume: 45 Pages: 645-655
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces2010
- Author(s)
  Hiroyuki Kageshima, et al.
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 3
- NAID
  10027442141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Epitaxial few-layer graphene : toward single crystal growth2010
- Author(s)
  H. Hibino, H. Kageshima, and M. Nagase
- Journal Title
  
  J. Phys. D : Appl. Phys.
  
  Volume: 43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Study on Thermoelectric Properties of Graphene2010
- Author(s)
  H. Kageshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 49 Issue: 10R Pages: 100207-100207
- DOI
  10.1143/jjap.49.100207
- NAID
  40017341194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310086
[Journal Article] Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles2010
- Author(s)
  Hiroyuki Kageshima, Hitoki Hibino, Masao Nagase, Hiroshi Yamaguchi
- Journal Title
  
  Materials Science Forum 645-648
  
  Pages: 597-602
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Stacking domains of epitaxial few-layer graphene on SiC(0001)2009
- Author(s)
  H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, H. Yamaguchi
- Journal Title
  
  Phys. Rev. B 80
  
  Pages: 85406-85406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Local Conductance Measurement of Double-layer Graphene on SiC Substrate2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
- Journal Title
  
  Nanotechnology 20
  
  Pages: 445704-445704
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Number-of-layers dependence of electronic properties of epitaxial few-layer graphene investigated by photoelectron emission microscopy2009
- Author(s)
  H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F. -Z. Guo, Y. Watanabe
- Journal Title
  
  Phys. Rev. B 79
  
  Pages: 125437-125437
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Theoretical Study of Epitaxial Graphene Growth on SiC(0001)Surfaces2009
- Author(s)
  Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Hiroshi Yamaguchi
- Journal Title
  
  Appl.Phys.Express 2
- NAID
  10025086838
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Local conductance measurements of double-layer graphene on SiC substrate2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Journal Title
  
  Nanotechnology 20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Number-of-layers dependence of electronic properties of epitaxial few-layer graphene investigated by photoelectron emission microscopy2009
- Author(s)
  H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo, Y. Watanabe
- Journal Title
  
  Phys. Rev. B 79
  
  Pages: 125437-125437
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Stacking domains of epitaxial few-layer graphene on SiC(0001)2009
- Author(s)
  H.Hibino, S.Mizuno, H.Kageshima, M.Nagase, H.Yamaguchi
- Journal Title
  
  Phys.Rev.B 80
  
  Pages: 85406-85406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Metrology of microscopic properties of graphene on SiC2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Journal Title
  
  信学技報ED2009-61 SDM2009-56
  
  Pages: 47-52
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces2009
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
- Journal Title
  
  Appl. Phys. Express 2
  
  Pages: 65502-65502
- NAID
  10025086838
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Local Conductance Measurement of Double-layer Graphene on SiC Substrate2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Journal Title
  
  Nanotechnology 20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Local conductance measurements of double-layer graphene on SiC substrate2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
- Journal Title
  
  Nanotechnology
  
  Volume: 20 Issue: 44 Pages: 445704-445704
- DOI
  10.1088/0957-4484/20/44/445704
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] グラフェンの基礎物性とその理論-デバイス応用の観点から2009
- Author(s)
  影島博之
- Journal Title
  
  応用物理学会応用電子物性分科会誌 15
  
  Pages: 97-102
- Data Source
  KAKENHI-PROJECT-21246006
[Journal Article] Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire2008
- Author(s)
  Satoru Ohno, Yojiro Oba, Shin Yabuuchi, Tetsuya Sato, Hiroyuki Kageshima
- Journal Title
  
  Journal of Physical Society Japan Vol.77,No.10
- NAID
  110006969309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310077
[Journal Article] Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO_2/Si(100) interface2008
- Author(s)
  T. Akiyama, T. Ito, H. Kageshima, and M. Uematsu
- Journal Title
  
  Phys. Rev. B77, 115356
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Stress Dependence of Oxidation Reaction at SiO_2/Si Interfaces during Silicon Thermal Oxidation2008
- Author(s)
  T. Akiyama, H. Kageshima, M. Uematsu, and T. Ito
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7089-7093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy2008
- Author(s)
  H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, H. Yamaguchi
- Journal Title
  
  e-J. Surf. Sci. Nanotech. 6
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Journal Title
  
  Nanotechnology 19
  
  Pages: 495701-495701
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] In-plane conductance measurement of graphene nanoislands using an integrated nanogapprobe2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Journal Title
  
  Nanotechnology 19
  
  Pages: 495701-495701
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Journal Title
  
  J. Phys: Conf. Series 100
  
  Pages: 52006-52006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
- Journal Title
  
  J. Phys : Conf. Series 100
  
  Pages: 52006-52006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310085
[Journal Article] Theoretical study on emission of Si-related species at Si-oxide/Si interfaces2006
- Author(s)
  Hiroyuki Kageshima
- Journal Title
  
  Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
  
  Pages: 45-46
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation2006
- Author(s)
  Hiroyuki Kageshima
- Journal Title
  
  Extended Abstracts of 2006 International Conference on Solid State Devices and Materials
  
  Pages: 446-447
- NAID
  10022545685
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Metrology of microscopic properties of graphene on SiC
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Journal Title
  
  信学技報 SDM2009-56
  
  Pages: 47-52
- Data Source
  KAKENHI-PROJECT-19310085
[Patent] 半導体発光素子2011
- Inventor(s)
  登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
- Industrial Property Rights Holder
  登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
- Industrial Property Number
  2011-051146
- Filing Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-22310062
[Patent] 半導体発光素子2011
- Inventor(s)
  登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
- Industrial Property Rights Holder
  登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
- Industrial Property Number
  2011-051146
- Filing Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-22310062
[Patent] 抵抗可変電子素子2008
- Inventor(s)
  永瀬雅夫、日比野浩樹、影島博之、山口浩司
- Industrial Property Rights Holder
  日本電信電話株式会社
- Industrial Property Number
  2008-226923
- Filing Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19310085
[Patent] 抵抗可変電子素子2008
- Inventor(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Industrial Property Rights Holder
  日本電信電話(株)
- Industrial Property Number
  2008-226923
- Filing Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] グラフェン/hBNヘテロ構造CVD成長における前駆体の理論検討2024
- Author(s)
  影島博之、Wang Shengnan、日比野浩樹
- Organizer
  日本物理学会2024年春季大会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Ag(111)薄膜上でのゲルマネン偏析のその場LEEM観察2023
- Author(s)
  日比野浩樹、大田晃生、影島博之、柚原淳司
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Cu表面上グラフェン・hBNヘテロ構造CVD成長におけるエッジ終端起源の理論探求2023
- Author(s)
  影島博之、Wang Shengnan、日比野浩樹
- Organizer
  日本物理学会2023年春季大会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Twist angle dependence of graphene-stacked junction characteristics2023
- Author(s)
  Murakami Hayate, Fumiya Fukunaga, Ohi Motoki, KUBO Kohsuke, Nakagawa Takeru, Kageshima Hiroyuki, Yasuhide Ohno and Masao Nagase
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K20960
[Presentation] hBN/グラフェンヘテロ構造CVD成長におけるエッジ終端機構2023
- Author(s)
  影島博之、Wang Shengnan、日比野浩樹
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Growth mechanism and vibrational properties of germanene fabricated through Ge segregation2023
- Author(s)
  Hiroki Hibino, Akio Ohta, Hiroyuki Kageshima, Junji Yuhara
- Organizer
  Annual Meeting of the Japan Society of Vacuum and Surface Science 2023
- Invited
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] 高電圧印加によるグラフェン積層接合の抵抗変化2023
- Author(s)
  大井基暉, 村上隼瑛, 久保倖介, 中川剛瑠, 大野恭秀, 永瀬雅夫, 影島博之
- Organizer
  第15回「集積化MEMSシンボジウム」
- Data Source
  KAKENHI-PROJECT-23K20960
[Presentation] hBN/グラフェンヘテロ構造CVD成長におけるエッジ終端の起源2022
- Author(s)
  影島博之、Wang Shengnan、日比野浩樹
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Cu表面上グラフェンリボン・hBNリボンのエッジH終端とファンデルワールス力補正効果2022
- Author(s)
  影島博之、Wang Shengnan、日比野浩樹
- Organizer
  日本物理学会2022年秋季大会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Controlled growth of heterostructures of graphene and hexagonal boron nitride2022
- Author(s)
  H. Hibino, S. Wang, and H. Kageshima
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Resistive switching behavior in graphene-stacked junction2022
- Author(s)
  M. Ohi, F. Fukunaga, H. Murakami, H. Kageshima, Y. Ohno and M. Nagase
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC2022),
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K20960
[Presentation] hBN/グラフェンヘテロ構造CVD 成長におけるエッジ終端の役割2022
- Author(s)
  影島博之、Shengnan Wang、日比野浩樹
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Theoretical study on origin of CVD growth direction difference in graphene/hBN heterostructures2022
- Author(s)
  H. Kageshima, S. Wang, and H. Hibino
- Organizer
  14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22 (ALC'22)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Theoretical Study of hBN/Graphene Heterostructure CVD Growth2021
- Author(s)
  H. Kageshima, S. Wang, and H. Hibino
- Organizer
  The International Symposium on Novel maTerials and quantum Technologies 2011 (ISNTT2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Controlled Growth of Hexagonal Boron Nitride and Heterostructures with Graphene2021
- Author(s)
  H. Hibino, S. Wang, and H. Kageshima
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] 単原子層物質の成長機構と構造制御2021
- Author(s)
  日比野浩樹、Shengnan Wang、影島博之
- Organizer
  第82回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] CVD におけるhBN/グラフェン積層ヘテロ構造成長の起源2021
- Author(s)
  影島博之、Shengnan Wang、日比野浩樹
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] グラフェン/Cu およびhBN/Cu 表面C 吸着におけるファンデルワールス力補正効果2021
- Author(s)
  影島博之、Shengnan Wang、日比野浩樹
- Organizer
  日本物理学会2021年秋季大会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Growth mechanism and structural control of hexagonal boron nitride and its heterostructures with graphene2021
- Author(s)
  H. Hibino, S. Wang, and H. Kageshima
- Organizer
  Global Summit and Expo on Graphene and 2D Materials (2DMAT2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] hBN/グラフェンヘテロ構造のCVDにおける成長方向選択性の起源2021
- Author(s)
  影島博之、Wang Shengnan、日比野浩樹
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] Theoretical Study on Role of Edge Termination in CVD Growth of hBN/Graphene Heterostructure on Cu Surface2021
- Author(s)
  H. Kageshima, S. Wang, and H. Hibino
- Organizer
  The 9th International Symposium on Surface Science (ISSS-9)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01768
[Presentation] BaTiO3を用いた歪み印加によるPd(100)薄膜の強磁性変調2018
- Author(s)
  坂裕介,小松克伊,櫻木俊輔,谷山智康,影島博之,佐藤徹哉
- Organizer
  日本物理学会　第73回年次大会
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] 遷移金属の吸着に伴う量子井戸バンドの変調を用いたPd(100)超薄膜の磁性制御2018
- Author(s)
  櫻木俊輔,影島博之,佐藤徹哉
- Organizer
  日本物理学会　2018年秋季大会
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] 表面の格子歪みを用いた金属の量子井戸状態の変調による磁性スイッチング2017
- Author(s)
  櫻木俊輔,影島博之,佐藤徹哉
- Organizer
  日本物理学会　2017年秋季大会
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] Magneto-elastic effect on ferromagnetism induced by quantum-well states in Pd thin film2017
- Author(s)
  Y. Ban, K. Komatsu, S. Sakuragi, T. Taniyama, H. Kageshima, T. Sato
- Organizer
  International Conference on Magnetism and Magnetic Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] BaTiO3が誘導する歪みを利用した電界印加によるPd薄膜の強磁性制御2017
- Author(s)
  坂裕介,小松克伊,櫻木俊輔,谷山智康,影島博之,佐藤徹哉
- Organizer
  日本物理学会　2017年秋季大会
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] 遷移金属超薄膜中に量子井戸状態に起因して生じた自発歪みと強磁性2016
- Author(s)
  櫻木俊輔, 田尻寛男, 佐藤龍，青木舜平，糸谷良，浦崎柊，岡田克也，影島博之, 佐藤徹哉
- Organizer
  日本物理学会　第71回年次大会
- Place of Presentation
  宮城県・仙台市・東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] 遷移金属超薄膜中に量子井戸状態に起因して生じた自発歪みと強磁性II2016
- Author(s)
  櫻木俊輔, 影島博之, 田尻寛男, 糸谷良, 佐藤徹哉
- Organizer
  日本物理学会　2016年秋季大会
- Place of Presentation
  金沢大学角間キャンパス（石川県・金沢市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] ショットキー障壁を用いたPd(100)超薄膜の量子井戸変調2016
- Author(s)
  糸谷良，櫻木俊輔，浦崎柊，岡田克也，影島博之，佐藤徹哉
- Organizer
  日本物理学会　第71回年次大会
- Place of Presentation
  宮城県・仙台市・東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H01998
[Presentation] SiC(0001) Si 面上第一層目グラフェン成長における [1-100]ステップの役割,2014
- Author(s)
  影島博之, 日比野浩樹, 山口浩司, 永瀬雅夫
- Organizer
  第75回応用物理学会秋季学術講演会(応物2014秋)
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-26289107
[Presentation] Theoretical studies of graphene on SiC2014
- Author(s)
  Kageshima Hiroyuki, Hiroki Hibino, Hiroshi Yamaguchi and Masao Nagase
- Organizer
  The 6th IEEE International Nanoelectronics Conference (INEC2014)
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-07-30
- Invited
- Data Source
  KAKENHI-PROJECT-26289107
[Presentation] 金微粒子によるSiC上グラフェンの表面増強ラマン散乱2014
- Author(s)
  関根佳明, 日比野浩樹, 小栗克弥, 岩本篤, 永瀬雅夫, 影島博之, 赤崎達志
- Organizer
  第75回応用物理学会秋季学術講演会(応物2014秋)
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-26289107
[Presentation] SiC 上グラフェンの形成と構造に関する第一原理計算2013
- Author(s)
  影島博之
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会「グラフェンの精密な界面制御とナノデバイス応用」
- Place of Presentation
  東北大学(仙台市)(招待講演)
- Year and Date
  2013-02-07
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 第一原理計算からみたSiC 上グラフェンの形成と構造2013
- Author(s)
  影島博之
- Organizer
  九州大学応用力学研究所主催第5回九州大学グラフェン研究会
- Place of Presentation
  九州大学(福岡市)(招待講演)
- Year and Date
  2013-01-18
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(11-20)a 面上エピタキシャルグラフェンの電子状態2013
- Author(s)
  影島博之、日比野浩樹
- Organizer
  2013 年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(厚木市)
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 第一原理計算で見たSiC(0001)上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会「次世代デバイス応用を企図したグラフェン形成機構の解明及び制御の研究」
- Place of Presentation
  東北大学(仙台市)(招待講演)
- Year and Date
  2012-02-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 第一原理計算で見たSiC(0001)上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会「次世代デバイス応用を企図したグラフェン形成機構の解明及び制御の研究」
- Place of Presentation
  東北大学(宮城県)(招待講演)
- Year and Date
  2012-02-23
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC 表面におけるグラフェン形成の理論検討2012
- Author(s)
  影島博之
- Organizer
  精密工学会超精密加工専門委員会第63回研究会「計算科学を利用したマテリアル・プロセスデザイン」
- Place of Presentation
  大阪ガーデンパレス(大阪市)(招待講演)
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 産業界での応用事例紹介-半導体電子材料研究への応用-2012
- Author(s)
  影島博之
- Organizer
  スーパーコンピューティング技術産業応用協議会,HPC産業利用スクール-ナノテクコース
- Place of Presentation
  東京大学(柏市)(招待講演)
- Year and Date
  2012-02-08
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] シリコン量子井戸におけるトンネル電流注入発光2012
- Author(s)
  登坂仁一郎、西口克彦、影島博之、藤原聡
- Organizer
  電子情報通信学会ED-SDM 研究会「機能ナノデバイス及び関連技術」
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2012-02-07
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 半導体デバイス材料研究への応用2012
- Author(s)
  影島博之
- Organizer
  第4回「イノベーション基盤シミュレーションソフトウェアの研究開発」シンポジウム
- Place of Presentation
  東京大学生産技術研究所(東京都)(招待講演)
- Year and Date
  2012-07-05
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 産業界での応用事例紹介.半導体電子材料研究への応用2012
- Author(s)
  影島博之
- Organizer
  スーパーコンピューティング技術産業応用協議会HPC 産業利用スクール-ナノコース
- Place of Presentation
  東京大学(柏市)(招待講演)
- Year and Date
  2012-02-08
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 第一原理計算で見たSiC(0001)上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会「次世代デバイス応用を企図したグラフェン形成機構の解明及び制御の研究」
- Place of Presentation
  東北大学(仙台市)
- Year and Date
  2012-02-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上第0 層グラフェン成長初期過程とステップの役割2012
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  2012 年秋季第73回応用物理学学術講演会
- Place of Presentation
  愛媛大学(松山市)
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之, 他
- Organizer
  日本物理学会2012年春季第67回年次大会
- Place of Presentation
  関西学院大学(兵庫県)
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC(0001)面上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之, 他
- Organizer
  日本物理学会2012年春季第67回年次大会
- Place of Presentation
  関西学院大学(西宮市)
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC表面におけるグラフェン形成の理論検討2012
- Author(s)
  影島博之
- Organizer
  精密工学会超精密加工専門委員会第63回研究会「計算科学を利用したマテリアル・プロセスデザイン」
- Place of Presentation
  大阪ガーデンパレス(大阪市)(招待講演)
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之
- Organizer
  日本物理学会第67回年次大会
- Place of Presentation
  関西学院大学(兵庫県)
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theory of graphene on SiC(11-20)a substrate2012
- Author(s)
  H. Kageshima and H. Hibino
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都国際会議場(京都市)
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 電子状態計算による半導体デバイス材料の研究2012
- Author(s)
  影島博之
- Organizer
  日本機械学会第25回計算力学講演会
- Place of Presentation
  神戸大学(神戸市)(招待講演)
- Year and Date
  2012-10-08
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上エピタキシャルグラフェン成長の初期過程2012
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  日本物理学会2012 年春季第67回年次大会
- Place of Presentation
  関西学院大学(西宮市)
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(11-20)a 面上エピタキシャルグラフェンの理論2012
- Author(s)
  影島博之、日比野浩樹
- Organizer
  日本物理学会2012 年秋季大会
- Place of Presentation
  横浜国立大学(横浜市)
- Year and Date
  2012-09-19
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Role of step in initial stage of graphene growth on SiC(0001)2012
- Author(s)
  H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
- Organizer
  31st International Conference on Physics of Semiconductors
- Place of Presentation
  スイス工科大学(スイス、チューリッヒ)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Growth, structure, and transport properties of epitaxial graphene on SiC2011
- Author(s)
  H. Hibino, S. Tanabe, and H. Kageshima
- Organizer
  8th International Symposium on Atomic Level Characterizations for New Materials and Devices' 11(ALC' 11)[invited]
- Place of Presentation
  Seoul, South Korea
- Year and Date
  2011-05-24
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] エピタキシャルグラフェン成長とLEEM評価技術2011
- Author(s)
  日比野浩樹、田邉真一、影島博之、前田文彦
- Organizer
  第58回応用物理学関連連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Growth and characterization of graphene on SiC. Graphene Workshop in Tsukuba[invited]2011
- Author(s)
  H. Hibino, S. Tanabe, and H. Kageshima
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2011-01-17
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theoretical study on epitaxial graphene growth on SiC(0001)surface2011
- Author(s)
  Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology(IWDTF2011)
- Place of Presentation
  東京都
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] トレンチモデルを用いたSiC(0001)上グラフェン成長の検討2011
- Author(s)
  影島博之, 他
- Organizer
  日本物理学会2011年秋季大会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2011-09-22
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Theoretical study on epitaxial graphene growth on SiC(0001)surface2011
- Author(s)
  H.Kageshima, H.Hibino, H.Yamaguchi, M.Nagase
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology(IWDTF-11)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001)surface2011
- Author(s)
  H.Kageshima, H.Hibino, M.Nagase, Y.Sekine, H.Yamaguchi
- Organizer
  International Symposium on Nanoscale Transport and Technology(ISNTT)
- Place of Presentation
  Atsugi, Japan
- Year and Date
  2011-01-12
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)2011
- Author(s)
  Kageshima H, et al
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  愛知県産業労働センター(愛知県)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] Carrier transport in epitaxial graphene grown on SiC(0001)2011
- Author(s)
  H. Hibino, S. Tanabe, and H. Kageshima
- Organizer
  The Third International Symposium on the Surface and Technology of Epitaxial Graphene(STEG3)[invited]
- Place of Presentation
  Saint Augustine, USA
- Year and Date
  2011-10-25
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)2011
- Author(s)
  H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター(名古屋市)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Role of steps and edges in epitaxial graphene growth on SiC (0001)2011
- Author(s)
  H.Kageshima
- Organizer
  6th International Symposium on Surface Science (ISSS-6)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2011-12-14
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] グラフェンの基礎物性2011
- Author(s)
  影島博之
- Organizer
  日本学術振興会光電相互変換第125委員会第214回研究会『グループIVフォトニクス』
- Place of Presentation
  静岡大学(浜松市)(招待講演)
- Year and Date
  2011-10-14
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface2011
- Author(s)
  Hiroyuki Kageshima, et al.
- Organizer
  The International Symposium on Nanoscale Transport and Technology (ISNTT2011)
- Place of Presentation
  Atsugi, Japan
- Year and Date
  2011-01-12
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] エピタキシャルグラフェンのHall移動度評価2011
- Author(s)
  田邉真一、関根佳明、影島博之、永瀬雅夫、日比野浩樹
- Organizer
  第58回応用物理学関連連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)面上エピタキシャルグラフェンの構造と形成2011
- Author(s)
  影島博之, 他
- Organizer
  応用物理学会シリコンテクノロジー分科会第137回研究集会
- Place of Presentation
  名古屋大学(愛知県)(招待講演)
- Year and Date
  2011-07-03
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC上グラフェンの表面増強ラマン散乱2011
- Author(s)
  関根佳明、日比野浩樹、小栗克弥、赤崎達志、影島博之、永瀬雅夫、山口浩司
- Organizer
  日本物理学会第66回年次大会
- Place of Presentation
  新潟
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Role of steps and edges in epitaxial graphene growth on SiC(0001)2011
- Author(s)
  Kageshima H, et al
- Organizer
  International Symposium on Surface Science -Towards Nano-, Bio-, and Green Innovation-
- Place of Presentation
  タワーホール船堀(東京都)
- Year and Date
  2011-12-14
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC(0001)上エピタキシャルグラフェン成長におけるSi脱離とC吸着の効果の比較2011
- Author(s)
  影島博之, 他
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] トレンチモデルを用いたSiC(0001)上グラフェン成長の検討2011
- Author(s)
  影島博之, 他
- Organizer
  日本物理学会2011年秋季大会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2011-09-22
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] Electroluminescence study of phosphorous ionization in silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
- Organizer
  The International Symposium on Nanoscale Transport and Technology(ISNTT2011)
- Place of Presentation
  厚木市
- Year and Date
  2011-01-11
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上エピタキシャルグラフェンの構造と形成2011
- Author(s)
  影島博之, 他
- Organizer
  応用物理学会シリコンテクノロジー分科会第137回研究集会「ゲートスタック技術の進展-半導体機能界面の特性評価を中心に」
- Place of Presentation
  名古屋大学(名古屋市)(招待講演)
- Year and Date
  2011-07-03
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上でのSi脱離とグラフェン形成2011
- Author(s)
  影島博之, 他
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC(0001)面上エピタキシャルグラフェンの構造と形成2011
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  応用物理学会シリコンテクノロジー分科会第137回研究集会「ゲートスタック技術の進展.半導体機能界面の特性評価を中心に」
- Place of Presentation
  名古屋大学(名古屋市)(招待講演)
- Year and Date
  2011-07-04
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(ooo1)面上でのSi脱離とグラフェン形成2011
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  第58回応用物理学関連連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)面上エピタキシャルグラフェンの構造と形成2011
- Author(s)
  影島博之
- Organizer
  応用物理学会シリコンテクノロジー分科会第137回研究集会「ゲートスタック技術の進展-半導体機能界面の特性評価を中心に」
- Place of Presentation
  名古屋大学(愛知県)(招待講演)
- Year and Date
  2011-07-04
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Electroluminescence study of phosphorous ionization in silicon-on- insulator metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
- Organizer
  The International Symposium on Nanoscale Transport and Technology
- Place of Presentation
  NTT 厚木研究開発センタ(厚木市)
- Year and Date
  2011-01-11
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上でのSi 脱離とグラフェン形成2011
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  2011 年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(厚木市)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] グラフェンの基礎物性2011
- Author(s)
  影島博之
- Organizer
  日本学術振興会光電相互変換第125 委員会第214回研究会『グループIV フォトニクス』
- Place of Presentation
  静岡大学(浜松市)(招待講演)
- Year and Date
  2011-10-14
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上でのSi脱離とグラフェン形成2011
- Author(s)
  影島博之, 日比野浩樹, 山口浩司, 永瀬雅夫
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001)surface2011
- Author(s)
  Hiroyuki Kageshima, Hiroki, Hibino, Masao Nagase, Yoshiaki Sekine, Hiroshi Yamaguchi
- Organizer
  The International Symposium on Nanoscale Transport and Technology(ISNTT2011)
- Place of Presentation
  厚木市
- Year and Date
  2011-01-12
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)上エピタキシャルグラフェン成長におけるSi脱離とC吸着の効果の比較2011
- Author(s)
  影島博之
- Organizer
  第72回応用物理学学術講演
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] トレンチモデルを用いたSiC(0001)上グラフェン成長の検討2011
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  日本物理学会2011 年秋季大会
- Place of Presentation
  富山大学(富山市)
- Year and Date
  2011-09-22
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Growth and chracterization of graphene on SiC2011
- Author(s)
  H.Hibino, S.Tanabe, H.Kageshima
- Organizer
  Graphene Workshop in Tsukuba
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2011-01-17
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] 水素をインターカレートしたエピタキシャルグラフェンのLEEM観察2011
- Author(s)
  日比野浩樹、桐生貢、田邉真一、影島博之
- Organizer
  第58回応用物理学関連連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theoretical study on epitaxial graphene growth on SiC(0001) surface2011
- Author(s)
  Hiroyuki Kageshima, et al.
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology (IWDTF2011)
- Place of Presentation
  Tokyo, Japan(Invited)
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] Theoretical study on magnetoelectric effects of embedded graphene nanoribbons on SiC(0001) surface2011
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
- Organizer
  The International Symposium on Nanoscale Transport and Technology
- Place of Presentation
  、NTT 厚木研究開発センタ(厚木市)
- Year and Date
  2011-01-12
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)上エピタキシャルグラフェン成長におけるSi脱離とC吸着の効果の比較2011
- Author(s)
  影島博之, 他
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Theory on Initial Stage of Epitaxial Graphene Growth on SiC (0001)2011
- Author(s)
  H.Kageshima
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM 2011)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Surface enhanced Raman spectroscopy of graphene grown on SiC2011
- Author(s)
  Y.Sekine, H.Hibino, K.Oguri, T.Akazaki, H.Kageshima, M.Nagase, H.Yamaguchi
- Organizer
  International Symposium on Nanoscale Transport and Technology(ISNTT)
- Place of Presentation
  Atsugi, Japan
- Year and Date
  2011-01-12
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] トレンチモデルを用いたSiC(0001)上グラフェン成長の検討2011
- Author(s)
  影島博之
- Organizer
  日本物理学会2011年秋季大会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2011-09-22
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Role of steps and edges in epitaxial graphene growth on SiC(0001)2011
- Author(s)
  H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
- Organizer
  International Symposium on Surface Science -Towards Nano-, Bio-, and Green Inovation-
- Place of Presentation
  タワーホール船堀(東京都)
- Year and Date
  2011-12-14
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Growth and transport properties of monolayer and bilayer graphene on SiC2011
- Author(s)
  H. Hibino, S. Tanabe, and H. Kageshima
- Organizer
  XX International Materials Research Congress(IMRC-XX)[invited]
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2011-08-17
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)上エピタキシャルグラフェン成長におけるSi 脱離とC 吸着の効果の比較2011
- Author(s)
  影島博之、日比野浩樹、山口浩司、永瀬雅夫
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上に形成されるグラフェン島の理論検討2010
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 単層エピタキシャルグラフェンにおける半整数量子ホール効果の観測2010
- Author(s)
  田邉真一、関根佳明、影島博之、永瀬雅夫、日比野浩樹
- Organizer
  第71回応用物理学学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theoretical study on functions of graphene2010
- Author(s)
  H.Kageshima, H.Hibino, M.Nagase, Y.Sekine, H.Yamaguchi
- Organizer
  International Symposium on Graphene Devices : Technology, Physics, and Modeling(ISGD 2010)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-29
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC2010
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Organizer
  International Workshop on in situ characterization of near surface processes 2010
- Place of Presentation
  Eisenerz, Austria
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態2010
- Author(s)
  影島博之
- Organizer
  日本物理学会2010年春第65回年次大会(招待講演)
- Place of Presentation
  岡山
- Year and Date
  2010-03-22
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] 炭化反応が駆動する少数層グラフェン上のSiナノ粒子の移動2010
- Author(s)
  日比野浩樹, 影島博之, 永瀬雅夫, 山口浩司
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学/平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 炭化反応が駆動する少数層グラフェン上のSiナノ粒子の移動2010
- Author(s)
  日比野浩樹、影島博之、永瀬雅夫、山口浩司
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  平塚、日本
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)上グラフェン成長のエナージェティクス2010
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  第2回九州大学応用力学研究所グラフェン研究会「エピタキシャルグラフェンの形成と物性」(招待講演)
- Place of Presentation
  九州大学、福岡市
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC2010
- Author(s)
  S.Tanabe, Y.Sekinae, H.Kageshima, M.Nagase, H.Hibino
- Organizer
  2010 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2010-12-02
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC上エピタキシャルグラフェンのステップ境界2010
- Author(s)
  影島博之、日比野浩樹・山口浩司、永瀬雅夫
- Organizer
  第71回応用物理学学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC上エピタキシャルグラフェンのステップ境界2010
- Author(s)
  影島博之, 他
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects2010
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
- Organizer
  30th International Conference on the Physics of Semiconductors
- Place of Presentation
  COEX(韓国、ソウル)
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Strong Stark effect of electroluminescence in thin SOI MOSFETs2010
- Author(s)
  J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] In-situ surface electron microscopy observations of growth and etching of epitaxial few-layer graphene on SiC2010
- Author(s)
  H. Hibino, H. Kageshima, and M. Nagase
- Organizer
  International Workshop on in situ characterization of near surface processes 2010[invited]
- Place of Presentation
  Eisenerz, Austria
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theoretical study on functions of graphene2010
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, and H. Yamaguchi
- Organizer
  International Symposium on Graphene Devices : Technology, Physics, and Modeling(ISGD 2010)[invited]
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-29
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC上数層グラフェンの断面TEM観察2010
- Author(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学/平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Atomic structure of epitaxial graphene islands on SiC(0001)surfaces and their magnetoelectric effects2010
- Author(s)
  Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Yoshiaki Sekine, Hiroshi Yamaguchi
- Organizer
  30th International Conference on the Physics of Semiconductors(ICPS2010)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上に形成されるグラフェン島の理論検討2010
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  平塚、日本
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Observation of bandgap in SiC graphene field-effect transistors2010
- Author(s)
  S.Tanabe, Y.Sekinae, H.Kageshima, M.Nagase, H.Hibino
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] siC(0001)面上に形成されるグラフェン島の理論検討2010
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学/平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上数層グラフェンの断面TEM観察2010
- Author(s)
  永瀬雅夫、日比野浩樹、影島博之、山口浩司
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  平塚、日本
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Growth, structure, and transport properties of epitaxial graphene on SiC2010
- Author(s)
  H.Hibino, S.Tanabe, H.Kageshima, M.Nagase
- Organizer
  International Symposium on Graphene Devices: Technology, Physics, and Modeling(ISGD 2010)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)表面上のエピタキシャルグラフェン島の原子構造と電気磁気効果2010
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、関根佳明、山口浩司
- Organizer
  日本物理学会2010 年秋季大会
- Place of Presentation
  大阪府立大学(堺市)
- Year and Date
  2010-09-25
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)表面上のエピタキシャルグラフェン島の原子構造と電気磁気効果2010
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 関根佳明, 山口浩司
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  堺市
- Year and Date
  2010-09-25
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態2010
- Author(s)
  影島博之
- Organizer
  日本物理学会 2010年春季第65回年次大会(招待講演)
- Place of Presentation
  岡山大学、岡山市
- Year and Date
  2010-03-22
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Electrical contact properties of few-layer epitaxial on SiC substrate2010
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Organizer
  International Symposium on Graphene Devices : Technology, Physics, and Modeling(ISGD 2010)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-28
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate2010
- Author(s)
  H. Kageshima and A. Fujiwara
- Organizer
  30th International Conference on the Physics of Semiconductors
- Place of Presentation
  COEX(韓国、ソウル)
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Effective dielectric constant of Si-nanofilm channel in the full inversion regime under field effect due to symmetric double gate2010
- Author(s)
  Hiroyuki Kageshima, Akira Fujiwara
- Organizer
  30th International Conference on the Physics of Semiconductors(ICPS2010)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 薄層SOI-MOSFET の電流注入発光における巨大Stark 効果2010
- Author(s)
  登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
- Organizer
  2010 年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects2010
- Author(s)
  Hiroyuki Kageshima, et al.
- Organizer
  30th International Conference on the Physics of Semiconductors (ICPS2010)
- Place of Presentation
  Seoul, Korea
- Year and Date
  2010-06-26
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC(0001)上グラフェン成長のエナージェティクス(招待講演)2010
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  第2回九州大学応用力学研究所グラフェン研究会「エピタキシャルグラフェンの形成と物性」
- Place of Presentation
  神戸国際会議場/神戸
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Electrical contact properties of few-layer epitaxial on SiC substrate2010
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
- Organizer
  International Symposium on Graphene Devices : Technology, Physics, and Modeling(ISGD 2010)[invited]
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-28
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Strong Stark effect of electroluminescence in thin SOI MOSFETs2010
- Author(s)
  Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京都
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)表面上のエピタキシャルグラフェン島の原子構造と電気磁気効果2010
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、関根佳明、山口浩司
- Organizer
  日本物理学会平成22年度秋季大会
- Place of Presentation
  大阪
- Year and Date
  2010-09-25
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Growth, structure, and transport properties of epitaxial graphene on SiC2010
- Author(s)
  H. Hibino, S. Tanabe, H. Kageshima, and M. Nagase
- Organizer
  International Symposium on Graphene Devices : Technology, Physics, and Modeling(ISGD 2010)[invited]
- Place of Presentation
  Sendai, Japan
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Theoretical study on growth, structure, and physical properties of graphene on SiC2010
- Author(s)
  Hiroyuki Kageshima, et al.
- Organizer
  "Japan-Korea Symposium on Surface and Nanostructure 9th" (JKSSN9)
- Place of Presentation
  Sendai, Japan(Invited)
- Year and Date
  2010-11-16
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態2010
- Author(s)
  影島博之
- Organizer
  日本物理学会2010年春第65回年次大会
- Place of Presentation
  岡山、日本
- Year and Date
  2010-03-22
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] 薄層SOI-MOSFETの電流注入発光における巨大Stark効果2010
- Author(s)
  登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態"(招待講演)2010
- Author(s)
  影島博之
- Organizer
  日本物理学会2010年春季第65回年次大会
- Place of Presentation
  岡山大学/岡山市
- Year and Date
  2010-03-22
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Theoretical study on functions of graphene2010
- Author(s)
  Hiroyuki Kageshima, et al.
- Organizer
  International Symposium on Graphene Devices 2010 (ISGD2010)
- Place of Presentation
  Sendai, Japan(Invited)
- Year and Date
  2010-10-29
- Data Source
  KAKENHI-PROJECT-22310086
[Presentation] SiC(0001)面上エピタキシャルグラフェン形成に関する第一原理計算2009
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学, つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Organizer
  Int.Symp.Advanced Nanodevices and Nanotechnology(ISANN2009)[Invited]
- Place of Presentation
  Sheraton Maui Resort and Spa, Kaanapali, Hawaii, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] First-principles study on energetics of C aggregation on SiC surfaces for understanding epitaxial graphene growth mechanism2009
- Author(s)
  H.Kageshima
- Organizer
  2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
- Place of Presentation
  RIEC, Tohoku Univ., Sendai, Japan
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 古くて新しいシリコン酸化膜の物性2009
- Author(s)
  影島博之
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] エピタキシャルグラフェン/SiC界面構造のX線CTR散乱による解析2009
- Author(s)
  日比野浩樹, 前田文彦, 影島博之, 永瀬雅夫, 広沢一郎, 渡辺義夫
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学/富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN2009)
- Place of Presentation
  Sheraton Maui Resort and Spa, Kaanapali/Hawaii/USA(Invited)
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Organizer
  Int.Symp.Advanced Nanodevices and Nanotechnology(ISANN2009)
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Local Conductance of Deformed Graphene Near Atomic Steps on SiC2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  Int. Symp. Nanoscale Transport and Technol. (ISNTT2009)
- Place of Presentation
  NTT Atsugi R&D Center/Atsugi/Japan
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] エピタキシャルグラフェン/SiC界面構造のX線CTR散乱による解析2009
- Author(s)
  日比野浩樹、前田文彦、影島博之、永瀬雅夫、広沢一郎、渡辺義夫
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山、日本
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiO_2中の窒素と窒素酸化物分子の理論検討2009
- Author(s)
  影島博之
- Organizer
  第14回ゲートスタツク研究会
- Place of Presentation
  東レ三島研修センター
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] SiC(0001)面上グラフェン形成の第一原理計算-吸着原子・原子空孔の影響-2009
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学/富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Metrology of microscopic properties of graphene on SiC2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
- Place of Presentation
  Haeundae Grand Hotel/Busan/ Korea(Invited)
- Year and Date
  2009-06-24
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上に成長したエピタキシャルグラフェンの積層ドメイン構造2009
- Author(s)
  日比野浩樹, 水野清義, 影島博之, 永瀬雅夫, 山口浩司
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学/つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles2009
- Author(s)
  H.Kageshima, H.Hibino, M.Nagase
- Organizer
  13th International Conference on Silicon Carbide and Related Materials,(ICSCRM2009)
- Place of Presentation
  Nurnberg, Germany
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Structure and electronic properties of epitaxial graphene grown on SiC studied by surface electron microscopy2009
- Author(s)
  H. Hibino, H. Kageshima, and M. Nagase
- Organizer
  22nd International Microproesses and Nanotechnology Conference(MNC2009)[invited]
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2009-11-18
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene2009
- Author(s)
  H. Hibino, H. Kageshima, M. Nagase
- Organizer
  7th Int. Symp. Atomic Level Characterizations for New Materials and Devices (ALC'09)
- Place of Presentation
  The Westin Maui Resort & Spa/Maui/Hawaii/ USA(Invited)
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性(2)2009
- Author(s)
  永瀬雅夫、日比野浩樹、影島博之、山口浩司
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Metrology of microscopic properties of graphene on SiC2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2009)[Invited]
- Place of Presentation
  Haeundae Grand Hotel, Busan, Korea
- Year and Date
  2009-06-24
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC(0001)面上グラフェン形成の第一原理計算-吸着原子・原子空孔の影響-2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山、日本
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Novel microscopies for graphene on SiC2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
- Organizer
  2009 RCIQE Int. Seminar on "Advanced Semiconductor Materials and Devices"
- Place of Presentation
  Hokkaido Univ. /Sapporo/ Japan(Invited)
- Year and Date
  2009-03-02
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 第一原理計算によるPt薄膜の磁性」日本物理学会2009
- Author(s)
  山田都照、影島博之、佐藤徹哉
- Organizer
  2009年秋季大会
- Place of Presentation
  熊本大学
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-19310077
[Presentation] Structure and Electronic Properties of Epitaxial Graphene grown on SiC Studied by Surface Electron Microscopy2009
- Author(s)
  H. Hibino, H. Kageshima, M. Nagase
- Organizer
  22nd Int. Microproesses and Nanotechnology Conf. (MNC2009)
- Place of Presentation
  Sheraton Sapporo Hotel/Sapporo/Japan(Invited)
- Year and Date
  2009-11-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles2009
- Author(s)
  H. Kageshima, H. Hibino, and M. Nagase
- Organizer
  13th International Conference on Silicon Carbide and Related Materials(ICSCRM2009)[invited]
- Place of Presentation
  Nurnberg, Germany
- Year and Date
  2009-10-11
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Microscopic evaluations of structure and electronic properties of epitaxial graphene2009
- Author(s)
  H. Hibino, H. Kageshima, and M. Nagase
- Organizer
  7th International Symposium on Atomic Level Characterizations for New Materials and Devices(ALC' 09)[invited]
- Place of Presentation
  Hawaii, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] sic単結晶基板上のエピタキシャルグラフェン形成と基礎物性-デバイス展開を目指して-(招待講演)2009
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  第18回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  神戸国際会議場/神戸
- Year and Date
  2009-12-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性2009
- Author(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学/つくば市
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Structure and Electronic Properties of Epitaxial Graphene grown on SiC Studied by Surface Electron Microscopy2009
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Organizer
  22nd Int.Microproesses and Nanotechnology Conf.(MNC2009)[Invited]
- Place of Presentation
  Sheraton Sapporo Hotel, Sapporo, Japan
- Year and Date
  2009-11-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 古くて新しいシリコン酸化膜の物性2009
- Author(s)
  影島博之
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Microscopic characterization of few-layer graphene on SiC2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology(ISANN2009)[invited]
- Place of Presentation
  Hawaii, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)面上グラフェン形成の第一原理計算-吸着原子・原子空孔の影響-」2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles2009
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase
- Organizer
  13th Int. Conf. on Silicon Carbide and Related Materials, (ICSCRM2009)
- Place of Presentation
  Nurnberg/ Germany(Invited)
- Year and Date
  2009-10-12
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] エピタキシャルグラフェン/SiC界面構造のX線CTR散乱による解析2009
- Author(s)
  日比野浩樹、前田文彦、影島博之、永瀬雅夫、広沢一郎、渡辺義夫
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Local Conductance of Deformed Graphene Near Atomic Steps on SiC2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  Int. Symp. Nanoscale Transport and Technol. (ISNTT2009)
- Place of Presentation
  NTT Atsugi R&D Center, Atsugi, Japan
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiO_2中の窒素と窒素酸化物分子の理論検討2009
- Author(s)
  影島博之
- Organizer
  第14回ゲートスタック研究会
- Place of Presentation
  三島
- Year and Date
  2009-01-24
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性(2)2009
- Author(s)
  永瀬雅夫、日比野浩樹、影島博之、山口浩司
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山、日本
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Novel microscopies for graphene on SiC" : [Invited]2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  2009 RCIQE Int. Seminar on "Advanced Semiconductor Materials and Devil
- Place of Presentation
  Conference Hall Hokkaido Univ., Sapporo. Japan
- Year and Date
  2009-03-02
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  17th Int. Colloquium on Scanning Probe Microscopy (ICSPM17
- Place of Presentation
  Atagawa-Height /Higashi-izu/Japan(Invited)
- Year and Date
  2009-12-12
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC(0001)面上エピタキシャルグラフェン形成に関する第一原理計算2009
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学/つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性2009
- Author(s)
  永瀬雅夫、日比野浩樹、影島博之、山口浩司
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学, つくば市
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] First-principles study on energetics of C aggregation on SiC surfaces for understanding epitaxial graphene growth mechanism2009
- Author(s)
  H.Kageshima
- Organizer
  東北大学・電気通信研究所・共同プロジェクト研究会「次世代デバイス応用を企図したグラフェン形成機構の解明及び制御の研究」
- Place of Presentation
  仙台、日本
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Microscopic evaluations of structure and electronic properties of epitaxial graphene2009
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Organizer
  7th Int.Symp.Atomic Level Characterizations for New Materials and Devices(ALC'09)
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Structure and electronic properties of epitaxial graphene grown on SiC studied by surface electron microscopy2009
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Organizer
  22nd Int.Microproesses and Nanotechnology Conf.(MNC2009)
- Place of Presentation
  札幌、日本
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC単結晶基板上のエピタキシャルグラフェン形成と基礎物性-デバイス展開を目指して-」2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  第18回SiC及び関連ワイドギャップ半導体研究会(招待講演)
- Place of Presentation
  神戸国際会議場、神戸市
- Year and Date
  2009-12-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] グラフェンの基礎物性とその理論-デバイス応用の観点から-2009
- Author(s)
  影島博之
- Organizer
  早稲田大学大学院先進理工学研究科第82回QMSセミナー(招待講演)
- Place of Presentation
  早稲田大学、新宿区
- Year and Date
  2009-11-20
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性(2)2009
- Author(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学/富山市
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Organizer
  17th Int.Colloquium on Scanning Probe Microscopy(ICSPM17)[Invited]
- Place of Presentation
  Atagawa-Height, Higashi-izu, Japan
- Year and Date
  2009-12-12
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] sic上グラフェン島の理論検討2009
- Author(s)
  影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
- Organizer
  東京大学物性研究所短期研究会
- Place of Presentation
  東大物性研/柏市
- Year and Date
  2009-10-24
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 清浄な表面を持つAuナノ粒子の磁性2009
- Author(s)
  山田都照, 影島博之, 佐藤徹哉
- Organizer
  日本物理学会 2009年秋季大会
- Place of Presentation
  熊本大学
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-19310077
[Presentation] First-principles study on energetics of C aggregation on SiC surfaces for understanding epitaxial graphene growth mechanism2009
- Author(s)
  H. Kageshima
- Organizer
  2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
- Place of Presentation
  RIEC/Tohoku Univ. /Sendai/Japan
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe2009
- Author(s)
  M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
- Organizer
  17th Int.Colloquium on Scanning Probe Microscopy(ICSPM17)
- Place of Presentation
  伊豆、日本
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene2009
- Author(s)
  H.Hibino, H.Kageshima, M.Nagase
- Organizer
  7th Int.Symp.Atomic Level Characterizations for New Materials and Devices(ALC'09)[Invited]
- Place of Presentation
  The Westin Maui Resort & Spa, Hawaii, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles2009
- Author(s)
  H.Kageshima, H.Hibino, M.Nagase
- Organizer
  13th International Conference on Silicon Carbide and Related Materials,(ICSCRM2009)[Invited]
- Place of Presentation
  Nurnberg, Germany
- Year and Date
  2009-10-12
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC(0001)上のC原子の吸着構造とその安定性2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本、日本
- Year and Date
  2009-09-27
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC上に成長したエピタキシャルグラフェンの積層ドメイン構造2009
- Author(s)
  日比野浩樹, 水野清義, 影島博之, 永瀬雅夫, 山口浩司
- Organizer
  2009年(平成21年)春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学, つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] グラフェンの基礎物性とその理論-デバイス応用の観点から-2009
- Author(s)
  影島博之
- Organizer
  早稲田大学大学院先進理工学研究科第82回QMSセミナー
- Place of Presentation
  早稲田大学/新宿区(招待講演)
- Year and Date
  2009-11-20
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上グラフェン島の理論検討2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  物性研究所短期研究会"ディラック電子系の物性-グラフェンおよび関連物質の最近の研究"
- Place of Presentation
  神戸、日本
- Year and Date
  2009-10-24
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC単結晶基板上のエピタキシャルグラフェン形成と基礎物性-デバイス展開を目指して-2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  第18回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  神戸、日本
- Year and Date
  2009-12-18
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC(0001)上のC原子の吸着構造とその安定性2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本大学、熊本市
- Year and Date
  2009-09-27
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe2009
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, and H. Yamaguchi
- Organizer
  17th International Colloquium on Scanning Probe Microscopy(ICSPM17)[invited]
- Place of Presentation
  Izu, Japan
- Year and Date
  2009-12-12
- Data Source
  KAKENHI-PROJECT-21246006
[Presentation] SiC上グラフェン島の理論検討2009
- Author(s)
  影島博之、日比野浩樹、永瀬雅夫、山口浩司
- Organizer
  東京大学物性研究所短期研究会
- Place of Presentation
  東大物性研、柏市
- Year and Date
  2009-10-24
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] In-plane conductane images of few-layer graphene on SiC substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  IEEE Nanotechnology Materials and Devices 2008 (NMDC2008)
- Place of Presentation
  Kyoto Univ. /Kyoto/Japan
- Year and Date
  2008-10-21
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Local conductance measurement of thermally grown graphene on SiC substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  International Symposium on Graphene Devices 2008 (ISGD2008)
- Place of Presentation
  Univ, of Aizu, Aizuwakamatsu, Japan
- Year and Date
  2008-11-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Evaluation of the number of graphene layers grown on SiC : SPM and RAMAN spectroscopy studies2008
- Author(s)
  H. Hibino, M. Nagase, C. Jackson, H. Kageshima, Y. Kobayashi, H. Yamaguchi
- Organizer
  International Symposium on Graphene Devices 2008 (ISGD2008)
- Place of Presentation
  Univ. of Aizu, Aizuwakamatsu, Japan
- Year and Date
  2008-11-17
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Local conductance measurement of thermally grown graphene on SiC substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  Int. Symp. on Graphene Devices 2008 (ISGD2008)
- Place of Presentation
  Univ. of Aizu/ Aizuwakamatsu/ Japan
- Year and Date
  2008-11-18
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 二層グラフェン導電率へのSiC基板表面ステップ構造の影響2008
- Author(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学, 春日井市
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 二層グラフェン導電率へのSiC基板表面ステップ構造の影響2008
- Author(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学/春日井市
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Theoretical Study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide2008
- Author(s)
  H. Kageshima
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  東京工業大学
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Theoretical study on epitaxial graphene formation on SiC(0001) surface2008
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
- Organizer
  International Symposium on Graphene Devices 2008 (ISGD2008)
- Place of Presentation
  Univ. of Aizu, Aizuwakamatsu, Japan
- Year and Date
  2008-11-17
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] iC上のグラフェン成長と電気特性(招待講演)2008
- Author(s)
  永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Local conductane measurement of deformed double-layer graphene on atomic step-structures of SiC substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  13th Advanced Heterostructures and Nanostructures Workshop (AHNW200)
- Place of Presentation
  Hapuna Beach Prince Hotel, Big Island of Hawaii, USA
- Year and Date
  2008-12-10
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Evaluation of the number of graphene layers grown on SiC: SPM and RAMAN spectroscopy studies2008
- Author(s)
  H. Hibino, M. Nagase, C. Jackson, H. Kageshima, Y. Kobayashi, H. Yamaguchi
- Organizer
  Int. Symp. on Graphene Devices 2008 (ISGD2008)
- Place of Presentation
  Univ. of Aizu/Aizuwakamatsu/ Japan
- Year and Date
  2008-11-17
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] SiC上グラフェン成長と電気特性[Invited]2008
- Author(s)
  永瀬雅夫,日比野浩樹,影島博之,山口浩司
- Organizer
  2008年春季第55回応用物理学関係連合会講演会薄膜・表面物理分科会企画シンポジウム
- Place of Presentation
  日本大学理工学部船橋キャンパス,船橋市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] In-plane conductane images of few-layer graphene on SiC substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  IEEE Nanotechnology Materials and Devices 2008 (NMDC2008)
- Place of Presentation
  Kyoto Univ., Kyoto, Japan
- Year and Date
  2008-10-21
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Theoretical study on epitaxial graphene formation on SiC(0001) surface2008
- Author(s)
  H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
- Organizer
  Int. Symp. on Graphene Devices 2008 (ISGD2008)
- Place of Presentation
  Univ. of Aizu/Aizuwakamatsu/ Japan
- Year and Date
  2008-11-17
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Theoretical study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide2008
- Author(s)
  Hiroyuki Kageshima
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  東京工業大学
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Local Conductance of Graphene Near Buried Atomic Steps on SiC Substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  Int. Conf. Nanoscience and Technol. 2008 (ICN+T2008)
- Place of Presentation
  Keystone/CO/USA
- Year and Date
  2008-07-22
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] Local conductane measurement of deformed double-layer graphene on atomic step-structures of SiC substrate2008
- Author(s)
  M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
- Organizer
  13th Advanced Heterostructures and Nanostructures Workshop (AHNW2008)
- Place of Presentation
  Hapuna Beach Prince Hotel/Big Island of Hawaii/USA
- Year and Date
  2008-12-10
- Data Source
  KAKENHI-PROJECT-19310085
[Presentation] 第一原理計算による二次元系Pdの磁性発現に関する研究2007
- Author(s)
  浦山太一、影島博之、佐藤徹哉
- Organizer
  日本物理学会第62回年次大会
- Place of Presentation
  北海道大学
- Year and Date
  2007-09-22
- Data Source
  KAKENHI-PROJECT-19310077
[Presentation] Microscopic mechanism of silicon themal oxidation process2007
- Author(s)
  Hiroyuki Kageshima
- Organizer
  211th Electrochemical Society Meeting
- Place of Presentation
  シカゴ(アメリカ)
- Year and Date
  2007-05-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Microscopic mechanism of silicon thermal oxidation process2007
- Author(s)
  H. Kageshima
- Organizer
  211th Electrochemical Society Meeting
- Place of Presentation
  シカゴ(アメリカ)
- Year and Date
  2007-05-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] 第一原理計算による二次元系Pdの磁性発現に関する研究2007
- Author(s)
  浦山太一, 影島博之, 佐藤徹哉
- Organizer
  日本物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2007-09-22
- Data Source
  KAKENHI-PROJECT-19310077
[Presentation] Si酸化膜中酸素安定サイトと酸素輸送機構2007
- Author(s)
  影島博之
- Organizer
  第54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-27
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Si熱酸化過程の微視的機構に関する考え方2007
- Author(s)
  影島博之
- Organizer
  第12回ゲートスタック研究会
- Place of Presentation
  三島
- Year and Date
  2007-02-02
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Theoretical study on emis-sion of Si-related species at Si-oxide/Si interfaces2006
- Author(s)
  H. Kageshima
- Organizer
  2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  川崎
- Year and Date
  2006-11-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] SiC上グラフェンの形成と構造に関する第一原理計算
- Author(s)
  影島博之
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会「グラフェンの精密な界面制御とナノデバイス応用」
- Place of Presentation
  東北大学（仙台市）
- Invited
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 半導体デバイス材料研究への応用
- Author(s)
  影島博之
- Organizer
  第４回「イノベーション基盤シミュレーションソフトウェアの研究開発」シンポジウム
- Place of Presentation
  東京大学生産技術研究所（東京都）
- Invited
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(11-20)a面上エピタキシャルグラフェンの電子状態
- Author(s)
  影島博之
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（厚木市）
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Role of step in initial stage of graphene growth on SiC(0001)
- Author(s)
  H. Kageshima
- Organizer
  31st International Conference on Physics of Semiconductors
- Place of Presentation
  スイス工科大学（スイス、チューリッヒ）
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] Theory of graphene on SiC(11-20)a substrate
- Author(s)
  H. Kageshima
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  京都国際会議場（京都市）
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 電子状態計算による半導体デバイス材料の研究
- Author(s)
  影島博之
- Organizer
  日本機械学会第２５回計算力学講演会
- Place of Presentation
  神戸大学（神戸市）
- Invited
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] 第一原理計算からみたSiC上グラフェンの形成と構造
- Author(s)
  影島博之
- Organizer
  九州大学応用力学研究所主催第５回九州大学グラフェン研究会
- Place of Presentation
  九州大学（福岡市）
- Invited
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(0001)面上第0層グラフェン成長初期過程とステップの役割
- Author(s)
  影島博之
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学（松山市）
- Data Source
  KAKENHI-PROJECT-22310062
[Presentation] SiC(11-20)a面上エピタキシャルグラフェンの理論
- Author(s)
  影島博之
- Organizer
  日本物理学会2012年秋季大会
- Place of Presentation
  横浜国立大学（横浜市）
- Data Source
  KAKENHI-PROJECT-22310062

1. NAGASE Masao (20393762)

# of Collaborated Projects: 5 results

# of Collaborated Products: 148 results
2. HIBINO Hiroki (60393740)

# of Collaborated Projects: 5 results

# of Collaborated Products: 177 results
3. SEKINE Yoshiaki (70393783)

# of Collaborated Projects: 3 results

# of Collaborated Products: 5 results
4. SATO Tetsuya (20162448)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
5. YAMAGUCHI Hiroshi (60374071)

# of Collaborated Projects: 2 results

# of Collaborated Products: 66 results
6. OKAMOTO Hajime (20350465)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. ONO Yukinori (80374073)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
8. 大野恭秀 (90362623)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
9. UEMATSU Masashi (60393758)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
10. WATANABE Takanobu (00367153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. ITO Kohei (30276414)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
13. AKIYAMA Toru (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
14. MAKI Hideyuki (10339715)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. SHINOHARA Takenao (90425629)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. EINAGA Yasuaki (00322066)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. KANISAWA Kiyoshi (70393767)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. YAMAGUCHI Toru (30393763)

# of Collaborated Projects: 1 results

# of Collaborated Products: 33 results
19. TANAKA Satoru (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. MIZUNO Seigi (60229705)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
21. NOBORISAKA Jinichiro (30515573)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
22. FUJIWARA Akira (70393759)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
23. 沢田正博 (00335697)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 島田賢也 (10284225)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 谷山智康 (10302960)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
26. 神原陽一 (50524055)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 堀匡寛 (50643269)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
28. 小栗克弥

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
29. 増子拓紀

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

KAGESHIMA Hiroyuki 影島 博之

影島 博之 カゲシマ ヒロユキ

Research Projects

Research Products

Co-Researchers

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Control of dielectric function by making nano-scale structure of IV-group semiconductorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Twist angle dependence of graphene-stacked junction characteristics2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Polarized Raman scattering spectroscopy of array of embedded graphene ribbons grown on 4H-SiC(0001)2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Resistive-switching behavior in stacked graphene diode2023

Author(s)

Journal Title

DOI

KAGESHIMA Hiroyuki 影島博之

影島博之カゲシマヒロユキ