Okada Narihito 岡田成仁

… Alternative Names

岡田成仁オカダナリヒト

OKADA Narihito 岡田成仁

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Researcher Number	70510684
Other IDs
Affiliation (Current)	2026: 山口大学, 大学院創成科学研究科, 准教授
Affiliation (based on the past Project Information) *help	2024: 山口大学, 大学院創成科学研究科, 准教授 2017 – 2020: 山口大学, 大学院創成科学研究科, 准教授 2017: 山口大学, 理工学研究科, 助教 2016: 山口大学, 創成科学研究科, 助教 2015: 山口大学, 大学院理工学研究科, 助教 2012 – 2015: 山口大学, 理工学研究科, 助教 2008 – 2010: Yamaguchi University, 大学院・理工学研究科, 助教
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering / Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment
Keywords	Principal Investigator GaN / InGaN / LED / 非極性面 / 窒化物半導体 / 結晶成長 / 偏光特性 / 発光ダイオード / 非極性面GaN / 高耐圧 … More / 高温動作 / 高電子移動度トランジスタ / AlN / N極性面 / 転位 / 点欠陥 / 超格子 / Vピット / 量子井戸 / 半導体物性 / 結晶工学 / 積層欠陥フリー / InGaNテンプレート / 透過型電子顕微鏡 / 完全緩和 / ファセット成長 / 半極性面 / InGaN多段ヘテロ中間層 / GaN基板 / InGaN underlying layer / Nitiride / seimpolar / 高効率化 / 窒化ガリウムインジウムテンプレート / GaInN / サファイア加工基板 … More Except Principal Investigator サファイア基板 / MOVPE / 半極性面 / GaN / 発光ダイオード / LED / 表面プラズモン / InGaN/GaN / 量子井戸 / 窒化物半導体 / 光デバイス / プラズモニクス / 研磨 / GaN基板 / 積層欠陥 / 転位 / HVPE / 結晶成長 / 無極性面 Less

Proposal of new nitride semiconductor electronic device structure using AlN substrate and its crystal growthPrincipal Investigator
- Principal Investigator
  
  岡田成仁
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Yamaguchi University
Operation of V-pit formation originated from dislocations and clarification of dislocation invalidation mechanism in GaN-based LEDsPrincipal Investigator
- Principal Investigator
  
  岡田成仁
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Yamaguchi University
High performance and controlling optical polarization for unpolar optical devices using hetero middle layerPrincipal Investigator
- Principal Investigator
  
  Okada Narihito
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Yamaguchi University
Development of fundamental technologies for highly efficient plasmonic optical and electronic devices
- Principal Investigator
  
  Okamoto Koichi
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kyushu University
Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
- Principal Investigator
  
  Tadatomo Kazuyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN templatePrincipal Investigator
- Principal Investigator
  
  OKADA Narihito
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Yamaguchi University
Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes
- Principal Investigator
  
  TADATOMO Kazuyuki
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Evaluation of crystalline quality of GaInN grown on high-quality nonpolar or semipolar GaNPrincipal Investigator
- Principal Investigator
  
  OKADA Narihito
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (Start-up)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Yamaguchi University

[Journal Article] Effect of the Twist Crystallinity of N-Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures2024
- Author(s)
  Taketo Kowaki, Koki Hanasaku, Minagi Miyamoto, Aina Hiyama Zazuli, Daisuke Inahara, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada,* and Yoichi Yamada
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 221 Issue: 21
- DOI
  10.1002/pssa.202400053
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01363
[Journal Article] Growth Mechanism of N-Polar GaN on Vicinal N-Polar AlN Templates in Metal-Organic Vapor Phase Epitaxy2024
- Author(s)
  Minagi Miyamoto, Koki Hanasaku, Taketo Kowaki, Daisuke Inahara, Aina Hiyama Zazuli, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada,* and Yoichi Yamada
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 221 Issue: 21
- DOI
  10.1002/pssa.202400055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01363
[Journal Article] Electrical Properties of N-Polar GaN/AlGaN/AlN Grown via Metal-Organic Vapor Phase Epitaxy2024
- Author(s)
  Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Satoshi Kurai, Narihito Okada,* and Yoichi Yamada
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 221 Issue: 21
- DOI
  10.1002/pssa.202400060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01363
[Journal Article] Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion2024
- Author(s)
  Narihito Okada, Ryota Hidaka, Taketo Kowaki, Takahiro Saito, Yoshihiro Sugawara, Daisaku Yokoe, Yongzhao Yao, Yukari Ishikawa, Satoshi Kurai, Yoichi Yamada, and Kazuyuki Tadatomo
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 136 Issue: 2
- DOI
  10.1063/5.0198321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24K01363
[Journal Article] Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT2020
- Author(s)
  Itakura Hideyuki、Nomura Toshihumi、Arita Naoki、Okada Narihito、Wetzel Christian M.、Chow T. Paul、Tadatomo Kazuyuki
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 2 Pages: 025133-025133
- DOI
  10.1063/1.5139591
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Journal Article] Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing2019
- Author(s)
  N. Okada, Y. Inomata, H. Ikeuchi, S. Fujimoto, H. Itakura, S. Nakashima, R. Kawamura, and K. Tadatomo
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: ５１２ Pages: 147-147
- DOI
  10.1016/j.jcrysgro.2019.02.016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17514
[Journal Article] Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer2018
- Author(s)
  Sugimoto Kohei、Okada Narihito、Kurai Satoshi、Yamada Yoichi、Tadatomo Kazuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6 Pages: 062101-062101
- DOI
  10.7567/jjap.57.062101
- NAID
  210000149112
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16K06264, KAKENHI-PROJECT-16K17514
[Journal Article] Plasmonics toward high-efficiency LEDs from the visible to the deep-UV region2017
- Author(s)
  K. Okamoto, M. Funato, Y. Kawakami, N. Okada, K. Tadatomo, K. Tamada
- Journal Title
  
  SPIE Proceedings
  
  Volume: 10124 Pages: 101240R-101240R
- DOI
  10.1117/12.2249589
- Data Source
  KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-26289109
[Journal Article] Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO2017
- Author(s)
  N. Okada, N. Morishita, A. Mori, T. Tsukada, K. Tateishi, K. Okamoto, K. Tadatomo
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 121
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289109
[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016
- Author(s)
  Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo,
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 253 Issue: 1 Pages: 36-45
- DOI
  10.1002/pssb.201552271
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Positional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substrates2016
- Author(s)
  T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FA07-05FA07
- DOI
  10.7567/jjap.55.05fa07
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate2015
- Author(s)
  S. Takeuchi, T. Uchiyama, T. Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1142-1148
- DOI
  10.1002/pssb.201451562
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction2015
- Author(s)
  T. Arauchi, S. Takeuchi, Y. Nakamura, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1149-1154
- DOI
  10.1002/pssb.201451564
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Fabrication of free standing {20-21} GaN substrates by HVPE using SiO2 masked GaN templates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 3-4 Pages: 401-404
- DOI
  10.1002/pssc.201300484
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo,
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 3 Pages: 035502-035502
- DOI
  10.7567/jjap.53.035502
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Growth of semipolar {11-22} GaN using SiNx intermediate layer by hydride vapor phase epitaxy2014
- Author(s)
  M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo
- Journal Title
  
  Phys. Stat. Solidi (c)
  
  Volume: 11, No. 3-4 Issue: 3-4 Pages: 557-560
- DOI
  10.1002/pssc.201300520
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760012
[Journal Article] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2014
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
- Journal Title
  
  Lecture Notes in Electrical Engineering
  
  Volume: 306 Pages: 23-30
- DOI
  10.1007/978-3-319-05711-8_3
- ISBN
  9783319057101, 9783319057118
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Generation of dislocation clusters by glide m-planes in semipolar GaN layers2014
- Author(s)
  N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, and H. T. Grahn
- Journal Title
  
  Phys. Stat. Solidi (a)
  
  Volume: 211, No. 4 Issue: 4 Pages: 736-739
- DOI
  10.1002/pssa.201300465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760012
[Journal Article] Characterization of semipolar {11-22} light-emitting diodes using a hole blocking layer2014
- Author(s)
  K. Nakao, M. Haziq, Y. Okamura, K. Yamane, N. Okada, and K. Tadatomo
- Journal Title
  
  Phys. Stat. Solidi (c)
  
  Volume: 11, No. 3-4 Issue: 3-4 Pages: 775-777
- DOI
  10.1002/pssc.201300511
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760012
[Journal Article] Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy2013
- Author(s)
  K. Yamane
- Journal Title
  
  Proc. of SPIE
  
  Volume: 8625 Pages: 8625031-7
- DOI
  10.1117/12.2007376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860033, KAKENHI-PROJECT-24760012
[Journal Article] Self-separated large freestanding semipolar {11-22} GaN films using r-plane patterned sapphire substrates2013
- Author(s)
  H. Furuya, K. Yamane, N. Okada, and K. Tadatomo
- Journal Title
  
  Jpn. J. Appl. Phys. 52
  
  Volume: 52 Issue: 8S Pages: 08JA09-08JA09
- DOI
  10.7567/jjap.52.08ja09
- Data Source
  KAKENHI-PROJECT-24760012
[Journal Article] Evaluation of {11-22} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions2013
- Author(s)
  Katsumi Uchida, Seita Miyoshi, Keisuke Yamane, Narihito Okada, Kazuyuki Tadatomo, and Noriyuki Kuwano
- Journal Title
  
  JJAP
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760012
[Journal Article] Evaluation of {11-22} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions2013
- Author(s)
  K. Uchida, S. Miyoshi1, K. Yamane, N. Okada, K. Tadatomo, and N. Kuwano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 8S Pages: 08JC07-08JC07
- DOI
  10.7567/jjap.52.08jc07
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760012
[Journal Article] Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes2011
- Author(s)
  K.Tadatomo, N.Okada
- Journal Title
  
  Proceedings of SPIE Vol.7954
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates2010
- Author(s)
  N.Okada, H.Oshita, A.Kurisu, K.Tadatomo
- Journal Title
  
  Japanese Journal of Applied Physics Vol.50
- NAID
  210000070128
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates2010
- Author(s)
  Narihito Okada
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50
- NAID
  210000070128
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Characterization of semipolar (11-22) GaN on c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO2 mask2010
- Author(s)
  A.Kurisu, K.Murakami, Y.Abe, N.Okada, K.Tadatomo
- Journal Title
  
  Physica Status Solidi (c) Vol.7
  
  Pages: 2059-2062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth of Semiconductor (11-22) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate2009
- Author(s)
  N.Okada, A.Kurisu, K.Murakami, K.Tadatomo
- Journal Title
  
  Applied Physics Express Vol.2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth of Semipolar (112^-2) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate2009
- Author(s)
  N.Okada
- Journal Title
  
  Appl.Phys.Express 2
  
  Pages: 0910011-3
- NAID
  10025517429
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Growth of Semiconductor (11-22) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate2009
- Author(s)
  N.Okada, et al.
- Journal Title
  
  Applied Physics Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth of m-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls2009
- Author(s)
  N.Okada, et al.
- Journal Title
  
  Physica Status Solidi (a) 206
  
  Pages: 1164-1167
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Growth of Semipolar (1122) GaN Layer by ControllGaInNisotropic Growth Rates in r-Plane Patterned Sapphire Substrate2009
- Author(s)
  N. Okada, H. Kurisu, K. Tadatomo
- Journal Title
  
  Appl. Phys. Express 2
  
  Pages: 91001-91001
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Growth of m-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls2009
- Author(s)
  N. Okada, Y. Kawashima, K. Tadatomo
- Journal Title
  
  physica status solidi(a) 206No.6
  
  Pages: 1164-1167
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of a-plane Sapphire2008
- Author(s)
  N. Okada
- Journal Title
  
  Applied Physics Express 1
- NAID
  10025082981
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of Sapphire2008
- Author(s)
  N. Okada, Y. Kawashima, K. Tadatomo
- Journal Title
  
  Appl. Phys. Express 1
  
  Pages: 111101-111101
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of a-plane Sapphire2008
- Author(s)
  N.Okada, Y.Kawashima, K.Tadatomo
- Journal Title
  
  Applied Physics Express Vol.1
- NAID
  10025082981
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360141
[Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of Sapphire2008
- Author(s)
  N. Okada
- Journal Title
  
  Appl. Phys. Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Growth mechanism of nonpolar m-plane GaN on maskless patterned a-plane sapphire substrate
- Author(s)
  Yuji Kawashima, Kazuma Murakami, Yuki Abe, Narihito Okada, Kazuyuki Tadatomo
- Journal Title
  
  physica status solidi (in press)
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Characterization of semipolar (112￣2) GaN on c-plane sap-phire sidewall of patterned r-plane sapphire substrate without SiO2 mask
- Author(s)
  Akihiro Kurisu, Kazuma Murakami, Yuki Abe, Narihito Okada, Kazuyuki Tadatomo
- Journal Title
  
  physica status solidi (in press)
- Data Source
  KAKENHI-PROJECT-20860057
[Journal Article] Growth of m-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls
- Author(s)
  N. Okada
- Journal Title
  
  physica status solidi(a) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 窒化ガリウム結晶自立基板の製造方法2014
- Inventor(s)
  橋本健宏, 古家大士, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  国立大学法人山口大学, 株式会社トクヤマ
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-033208
- Filing Date
  2014-02-24
- Data Source
  KAKENHI-PROJECT-25289088
[Patent] 自立基板の製造方法2013
- Inventor(s)
  古家大士,東正信,只友一行,岡田成仁,山根啓輔
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-26
- Overseas
- Data Source
  KAKENHI-PROJECT-24760012
[Patent] 半導体装置の製造方法2013
- Inventor(s)
  古家大士,東正信,只友一行,岡田成仁,山根啓輔
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-26
- Overseas
- Data Source
  KAKENHI-PROJECT-24760012
[Patent] 窒化ガリウム結晶自立基板およびその製造方法2013
- Inventor(s)
  古家大士,東正信,只友一行,岡田成仁,山根啓輔
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-13
- Overseas
- Data Source
  KAKENHI-PROJECT-24760012
[Patent] 窒化ガリウム結晶積層基板及びその製造方法2011
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁
- Industrial Property Rights Holder
  株式会社トクヤマ,国立大学法人山口大学
- Industrial Property Number
  2011-049487
- Filing Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 窒化ガリウム結晶積層基板及びその製造方法2011
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁
- Industrial Property Rights Holder
  トクヤマ,山口大学
- Filing Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 多波長発光素子及びその製造方法2011
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Number
  2011-053393
- Filing Date
  2011-03-10
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 多波長発光素子及びその製造方法2011
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板及びその製造方法2011
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Number
  2010-037025
- Filing Date
  2011-02-23
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 多波長発光素子及びその製造方法2011
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2011-03-10
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板及びその製造方法2010
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Industrial Property Number
  2010-037025
- Filing Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 半導体基板及びその製造方法2010
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板及びその製造方法2009
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Filing Date
  2009-08-20
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 半導体発光素子の製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Filing Date
  2009-03-10
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 半導体基板およびその製造方法2009
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-08-20
- Overseas
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] サファイア基板の製造方法および半導体装置2009
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-02-09
- Overseas
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体発光素子の製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-03-09
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体発光素子の製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2009-03-10
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体基板及びその製造方法2009
- Inventor(s)
  只友一行、岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Filing Date
  2009-08-20
- Overseas
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 半導体発光素子の製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Filing Date
  2009-03-09
- Data Source
  KAKENHI-PROJECT-20860057
[Patent] 半導体基板およびその製造方法2009
- Inventor(s)
  只友一行, 岡田成仁
- Industrial Property Rights Holder
  国立大学法人山口大学
- Filing Date
  2009-08-20
- Data Source
  KAKENHI-PROJECT-20360141
[Patent] 半導体発光素子の製造方法2008
- Inventor(s)
  只友一行, 岡田成仁
- Filing Date
  2008-08-25
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 加工基板上N極性面AlNの結晶成長2024
- Author(s)
  木本大星, 藤井開, Aina HiyamaZazuli, 仁ノ木亮祐, 倉井聡, 岡田成仁,山田陽一
- Organizer
  2024年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] 外部応力によるN極性GaN/Al0.9Ga0.1N/AlN HEMTの電気特性変化2024
- Author(s)
  Zazuli Hiyama Aina、藤井開、仁ノ木亮祐、木本大星、山中郁哉、平田靖晃、段畠陽樹、林内天、倉井聡、岡田成仁、山田陽一
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny pits layer2024
- Author(s)
  Narihito Okada, Aina Hiyama Zazuli, Daisuke Inahara, Taketo Kowaki ,Minagi Miyamoto, Kai Fujii, Ryosuke Ninoki, Sora Nagata, Taisei Kimoto, Satoshi Kurai, Yoshihiro Sugawara, Daisaku Yokoe, Yongzhao Yao, Yukari Ishikawa, Yoichi Yamada
- Organizer
  The 8th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性面AlNのMOVPE成長とHEMT応用2024
- Author(s)
  岡田成仁
- Organizer
  日本学術振興会第R032委員会第20回研究会プログラム「化合物半導体結晶成長の新展開」
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性面AlNの結晶成長とGaN/AlN HEMTへの応用2024
- Author(s)
  岡田成仁、ヒヤマアイナ、藤井開、木本大星、仁ノ木亮祐、山中郁哉、倉井聡、山田陽一
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] 窒化物半導体の結晶成長とデバイス性能2024
- Author(s)
  岡田成仁
- Organizer
  【GaNコンソ】2024年度サマースクール（結晶・評価）
- Invited
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性面GaN HEMTデバイスの性能に及ぼすアニールの影響2024
- Author(s)
  仁ノ木亮祐、平田靖晃、Zazuli Aina Hiyama、藤井開、木本大星、倉井聡、岡田成仁、山田陽一
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性面GaN/AlGaN/AlNのⅤ/Ⅲ比変化が電気特性に及ぼす影響2024
- Author(s)
  山中郁哉, Aina Hiyama Zazuli , 藤井開, 木本大星, 仁ノ木亮祐, 倉井聡, 岡田成仁, 山田陽一
- Organizer
  2024年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] Growth and device performance of polar and semipolar light emitting diodes on patterned sapphire substrate2024
- Author(s)
  Narihito Okada
- Organizer
  The 26th Takayanagi Kenjiro Memorial Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性GaN/AlGaN/AlN高電子移動度トランジスタのリーク電流が絶縁破壊電圧に及ぼす影響2024
- Author(s)
  Zazuli Hiyama Aina、藤井開、仁ノ木亮祐、平田靖晃、木本大星、倉井聡、岡田成仁、田中敦之、新田州吾、本田善央、天野浩、山田陽一
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性面GaN/AlGaN/AlN HEMTのリーク電流についての考察2024
- Author(s)
  仁ノ木亮祐, 稲原大輔, Aina Hiyama Zazuli,平田靖晃, 花咲光基, 小脇岳土, 宮本弥凪,藤井開, 木本大星, 倉井聡, 岡田成仁, 山田陽一
- Organizer
  2024年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] 深紫外線SHG発光デバイスに向けたAlNの両極性AlNの結晶成長とそのメカニズム2024
- Author(s)
  岡田成仁、中野貴之
- Organizer
  2024年度生体医歯工学共同研究拠点成果報告会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] N極性面GaN/AlN HEMTの電気特性の動作温度依存性2024
- Author(s)
  山中郁哉、Zazuli Aina Hiyama、藤井開、木本大星、仁ノ木亮祐、倉井聡、岡田成仁、田中敦之、新田州吾、本田善央、天野浩、廣木正伸、平間一行、谷保芳孝、中野貴之、山田陽一
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-24K01363
[Presentation] 緩和した厚膜InGaN上の長波長MQWの作製と評価2020
- Author(s)
  岩崎直矢、猪股祐貴、河村澪、岡田成仁、倉井聡、山田陽一、只友一行
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] 完全緩和した{11-22}InGaN下地層上の多重量子井戸の発光特性2020
- Author(s)
  俵迫湧也、河村澪、西直矢、原田裕也、ヌルファラナジハマザラン、岡田成仁、倉井聡、山田陽一、只友一行
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] InGaN/GaN超格子によるAlGaN/GaN高電子移動度トランジスタの性能向上2020
- Author(s)
  松田駿佑, 田村元希, 野村俊文, 岡田成仁, 只友一行
- Organizer
  2020年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] 長波長発光デバイス化に向けファセット成長したInGaN下地層の評価2020
- Author(s)
  原田裕也, 俵迫湧也, 河村澪, 西直矢, 岡田成仁,只友一行
- Organizer
  2020年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] 中温成長GaN ピット形成層上のInGaN 単一量子井戸構造におけるポテンシャル障壁評価2020
- Author(s)
  倉井聡、高俊吉、槇尾凌我、林直矢、湯浅翔太、岡田成仁、只友一行、山田陽一
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] ファセット成長による高組成InGaN下地層の検討2020
- Author(s)
  西直矢、河村澪、川村洋史、原田裕也、俵迫勇也、岡田成仁、只友一行
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] InGaN下地層がInGaN/GaN量子井戸の発光強度に与える影響2020
- Author(s)
  河村澪、岩崎直矢、猪股祐貴、岡田成仁、倉井聡、山田陽一、只友一行
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] InGaN 下地層及び InGaN/GaN SLがGaN系長波長LEDに与える影響2020
- Author(s)
  俵迫湧也, 河村澪, 西直矢, 原田裕也, 岡田成仁, 倉井聡, 山田陽一, 只友一行
- Organizer
  2020年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] GaN系LEDの転位に起因するVピットの形状操作と転位無効化メカニズムの解明2019
- Author(s)
  岡田成仁
- Organizer
  新学術領域研究・特異構造第4回領域全体会議
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] 中温成長GaNを用いたVピット形成とInGaN MQWの光学評価2019
- Author(s)
  岩崎直矢, 河村澪, 猪股祐貴, 藤井智也, 岡田成仁, 只友一行
- Organizer
  2019年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] ハイドライド気相成長法による積層欠陥の少ない高品質半極性{20-21}面GaNテンプレート上GaNの成長2019
- Author(s)
  新宮章吾、藤本怜、岡田成仁、ジェソン、ジュンハン、只友一行
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17514
[Presentation] Vピット形成層がInGaN/GaN MQWに与える影響2019
- Author(s)
  河村澪、猪股祐貴、岩崎直矢、藤井智也、岡田成仁、倉井聡、山田洋一、只友一行
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] InGaN underlying layerがAlGaN/GaN HEMTのデバイス特性に与える影響2019
- Author(s)
  野村俊文、板倉秀之、田村元希、岡田成仁、只友一行
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] 半極性InGaN/GaN量子井戸の表面プラズモン共鳴による発光増強2019
- Author(s)
  亀谷純、中村俊樹、村尾文弥、松山哲也、和田健司、岡田成仁、只友一行、岡本晃一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17514
[Presentation] 緩和した厚膜InGaN上のLEDの検討2019
- Author(s)
  猪股祐貴、河村澪、藤井智也、岩崎直矢、岡田成仁、只友一行
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] InGaN/GaN超格子による GaN 系発光・電子デバイスの性能向上2019
- Author(s)
  岡田成仁，板倉秀之，猪股祐貴，河村澪，野村俊文，岩崎直矢，田村元希，只友一行
- Organizer
  第48回結晶成長国内会議（JCCG-48）
- Invited
- Data Source
  KAKENHI-PUBLICLY-19H04549
[Presentation] 緩和した厚膜InGaNの成長とその評価３2018
- Author(s)
  猪股祐貴、河村澪、中島慎太郎、板倉秀之、藤本怜、池内裕紀、岡田成仁、只友一行
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17514
[Presentation] Fabrication and evaluation of multiple-quantum wells on high-quality relaxed InGaN template fabricated by combination of ELO and CMP2018
- Author(s)
  Yuki Inomata, Hideyuki Itajura, Satoru Fujimoto, Narihito Okada, and Kazuyuki Tadatomo
- Organizer
  International conference of metal-organic vapor phase epitaxy XIX (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17514
[Presentation] 緩和した厚膜InGaNの成長とその評価II2018
- Author(s)
  猪股祐貴, 森下直起, 板倉秀之, 藤本怜, 岡田成仁, 只友一行
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17514
[Presentation] 緩和した厚膜InGaNの成長とその評価2017
- Author(s)
  森下直起, 岡田成仁, 只友一行
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17514
[Presentation] X線マイクロ回折法による半極性面(20-21)GaN厚膜の欠陥分布評価2015
- Author(s)
  内山星郎，竹内正太郎，荒内琢士，橋本健宏，山根啓輔，岡田成仁，今井康彦，木村滋，只友一行，酒井朗
- Organizer
  2015年秋季第76回応用物理学会関係連合学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Plasmonic Light-Emitting Diodes with Thin p-Type Layer and Localized-Ag Layer Embedded by ITO2015
- Author(s)
  N. Okada, T. Tsukada, K. Tadatomo, K. Okamoto
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
- Place of Presentation
  Pacifico Yokohama
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Efficient InGaN-based Plasmonic Light-Emitting Diodes with Thin p-type Layers2015
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, T. Tsukada, N. Okada, K. Tadatomo
- Organizer
  The 10th Asia-Pacific Conference on Near-field Optics (APNFO10)
- Place of Presentation
  Hokkaido, japan
- Year and Date
  2015-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] サファイア加工基板上への半極性{20-2-1}GaNの成長2015
- Author(s)
  永利圭，岡村泰仁，岡田成仁，只友一行
- Organizer
  2015年度応用物理・物理系学会中四国支部合同学術講演会
- Place of Presentation
  徳島大学（徳島県徳島市）
- Year and Date
  2015-08-01
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] 半極性自立GaN基板の作製2015
- Author(s)
  只友一行, 岡田成仁, 山根啓輔, 古家大士, 橋本健宏
- Organizer
  日本結晶成長学会ナノエピ分科会第７回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2015-05-07
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] HVPEによるGaN非極性基板作製2015
- Author(s)
  只友一行, 岡田成仁, 山根啓輔
- Organizer
  日本学術振興会第162委員会第94回研究会
- Place of Presentation
  主婦会館（東京都千代田区）
- Year and Date
  2015-07-24
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Fabrication of semipolar free standing GaN Substrate2015
- Author(s)
  K. Tadatomo, N. Okada, and K. Yamane
- Organizer
  German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices 2015
- Place of Presentation
  京都大学芝蘭会館（京都府京都市）
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Growth of Semipolar GaN Substrates by Hydride Vapor Phase Epitaxy on Patterned Sapphire Substrate2015
- Author(s)
  K. Tadatomo, N. Okada, and K. Yamane
- Organizer
  CLEO-PR 2015
- Place of Presentation
  Busan, Korea
- Year and Date
  2015-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Relationship between V-Pit Diameter and Potential Barrier Height in InGaN Based Light-Emitting Diodes2014
- Author(s)
  N. Okada, M. Haziq, K. Yamane, Y. Yamada, and K. Tadatomo
- Organizer
  Conference on LED and Its Industrial Application'14 (LEDIA'14)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan(Oral presentation)( LED4-14)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長法による半極性面GaNの再成長2014
- Author(s)
  稲垣卓志, 橋本健宏, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学（東京都渋谷区）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長法を用いた成長条件の最適化による半極性面{11-22}GaNの基底面積層欠陥の低減2014
- Author(s)
  上野元久，山根啓輔, 岡田成仁, 只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学（東京都渋谷区）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Fabrication of InGaN Based Light-Emitting Diode Using Freestanding {20-21} GaN Substrate2014
- Author(s)
  Y. Denpo, Y. Mitsui, K. Yamane, N. Okada, and K. Tadatomo
- Organizer
  Conference on LED and Its Industrial Application'14 (LEDIA'14)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan(Poster presentation)(LEDp6-22)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] abrication of InGaN Based Light-Emitting Diode Using Freestanding {20-21} GaN Substrate2014
- Author(s)
  Y. Denpo, Y. Mitsui, K. Yamane, N. Okada, and K. Tadatomo
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LED4-12, Pacifico Yokohama
- Place of Presentation
  Pacifico Yokohama, (Yokohama, Japan)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] 自立{20-21}GaN基板を用いたInGaN系LED構造の作製2014
- Author(s)
  傳寶裕晶,光井勇祐,山根啓輔,岡田成仁,只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学,神奈川県(20a-PG1-10)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] プラズモン効果を目指した薄膜p層を有するInGaN系LEDの作製2014
- Author(s)
  塚田哲朗, 山根啓輔, 岡田成仁, 只友一行, 立石和隆，岡本晃一
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学（東京都渋谷区）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長法を用いた成長条件の最適化による半極性面{11-22}GaNの基底面積層欠陥の低減2014
- Author(s)
  上野元久,山根啓輔,岡田成仁,只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学,神奈川県(18p-E13-8)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] HVPEの成長条件が厚膜{20-21} GaNの結晶性に与える影響2014
- Author(s)
  橋本健宏，山根啓輔，岡田成仁，只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学（東京都渋谷区）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] 自立{20-21}GaN基板を用いたInGaN系LED構造の作製2014
- Author(s)
  傳寶裕晶, 光井勇祐, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学（東京都渋谷区）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長法による半極性面GaNの再成長2014
- Author(s)
  稲垣卓志,橋本健宏,山根啓輔,岡田成仁,只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学,神奈川県(18p-E13-9)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] HVPEの成長条件が厚膜{20-21}GaNの結晶性に与える影響2014
- Author(s)
  橋本健宏, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（相模原市）
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Evaluation of the Optical Polarization Properties in Semi-Polar {11-22} LEDs2014
- Author(s)
  Y. Okamura, K. Nakao, N. Okada, K. Yamane, and K. Tadatomo
- Organizer
  Conference on LED and Its Industrial Application'14 (LEDIA'14)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan(Oral presentation)(LED4-12)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Evaluation of the Optical Polarization Properties in Semi-Polar {11-22} LEDs2014
- Author(s)
  Y. Okamura, K. Nakao, N. Okada, K. Yamane, and K. Tadatomo
- Organizer
  Conference on LED and Its Industrial Application ’14 (LEDIA ’14), LED4-12, Pacifico Yokohama
- Place of Presentation
  Pacifico Yokohama, (Yokohama, Japan)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] HVPEの成長条件が厚膜{20-21} GaNの結晶性に与える影響2014
- Author(s)
  橋本健宏,山根啓輔,岡田成仁,只友一行
- Organizer
  2014年春季第61回応用物理学会関係連合学術講演会
- Place of Presentation
  青山学院大学,神奈川県(18p-E13-10)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長法による自立{20-21}GaN基板の作製とLED応用2013
- Author(s)
  山根啓輔, 橋本健宏, 稲垣卓志, 岡田成仁, 只友一行
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学(京都府京田辺）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer2013
- Author(s)
  K. Nakao, K. Uchida, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(BP3.30)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Generation of Defects by Glide m-planes in Semipolar GaN Layers2013
- Author(s)
  N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, H. T. Grahn
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC Metropolitan Area(USA)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Semipolar GaN substrate grown on patterned sapphire substrate by hydride vapor phase epitaxy2013
- Author(s)
  K. Tadatomo, K. Yamane, N. Okada, H. Furuya, and Y. Hashimoto
- Organizer
  DPG Spring Meeting Deutschen Physikalischen Gesellschaft
- Place of Presentation
  Germany, Regensburg : Regensburug University
- Year and Date
  2013-03-10
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC Metropolitan Area(USA)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Characterization of structural defects in {20-21} GaN Layers on {22-43} Patterned Sapphire Substrates2013
- Author(s)
  T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University, Kyoto, Japan(Oral presentation)(17p-M6-7)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Semipolar GaN Growth on Patterned Sapphire Substrate by Hydride Vapor Phase Epitaxy2013
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya, and Y. Hashimoto
- Organizer
  SPIE, Photonics West 2013 SPIE (the international society for optics and photonics) Paper
- Place of Presentation
  USA, California : Mscone Center
- Year and Date
  2013-02-02
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in semipolar GaN substrate grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, M. Koyama, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University, Kyoto, Japan(Poster presentation)(16p-PM1-7)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] HVPE成長したサファイア加工基板上厚膜 {20-21} GaNの積層欠陥の挙動2013
- Author(s)
  稲垣卓志, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  2013年度応用物理・物理系学会中国四国支部合同学術講演会
- Place of Presentation
  香川大学(香川県高松市）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21}GaN on Patterned Sapphire Substrate2013
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  International Symposium on O+RC:R[19]Cptomechatronic Technologies 2013 (ISOT2013)
- Place of Presentation
  Ramada Plaza Jeju Hotel, Jeju Island, Korea(Invited oral Presentation)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Characterization of structural defects in {20-21} GaN Layers on {22-43} Patterned Sapphire Substrates2013
- Author(s)
  T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University（Kyoto Tanabe)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Progress in semipolar GaN on patterned sapphire substrates by HVPE2013
- Author(s)
  N. Okada, K. Yamane, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University (Kyoto)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Reduction of Defects in Semipolar {11-22} GaN Using SiNx Intermediate layer by Hydride Vapor Phase Epitaxy2013
- Author(s)
  M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(AP3.12)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Reduction of Defects in Semipolar {11-22} GaN Using SiNx Intermediate layer by Hydride Vapor Phase Epitaxy2013
- Author(s)
  M. Ueno, Y. Hashimoto, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC Metropolitan Area(USA)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in semipolar GaN substrate grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, M. Koyama, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University（Kyoto Tanabe)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] {11-22} Semipolar Light Emitting Diodes Using Relaxed Thick InGaN Layers with Various In Compositions and Thickness2013
- Author(s)
  N. Okada, K. Uchida, K. Yamane, and K. Tadatomo
- Organizer
  E-MRS 2013 SPRING MEETING
- Place of Presentation
  Congress Center - Strasbourg(France)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2013
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, and K. Tadatomo
- Organizer
  International Symposium on Optomechatronic Technologies 2013 (ISOT2013)
- Place of Presentation
  Jeju Island, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Improvement on Flatness of GaN Layer and Utilization Efficiency of Ga Source by Flow Modulation on Hydride Vapor Phase Epitaxy2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Bavaria, Germany(Invited oral Presentation)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Progress in semipolar GaN on patterned sapphire substrates by HVPE2013
- Author(s)
  N. Okada, K. Yamane, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University, Kyoto, Japan(Invited oral Presentation)(17p-M6-2)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] サファイア加工基板を用いた{20-21} GaN成長における積層欠陥の抑制2013
- Author(s)
  橋本健宏, 小山正和, 稲垣卓志, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学(京都府京田辺）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Improvement in Semipolar {11-22} Light-Emitting Diodes Using Combination of InGaN Underlying Layer and Hole Blocking Layer2013
- Author(s)
  K. Nakao, K. Uchida, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC Metropolitan Area(USA)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Oral presentation)(A6.05)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] {11-22} Semipolar Light Emitting Diodes Using Relaxed Thick InGaN Layers with Various In Compositions and Thickness2013
- Author(s)
  N. Okada, K. Uchida, K. Yamane, and K. Tadatomo
- Organizer
  E-MRS 2013 SPRING MEETING
- Place of Presentation
  Congress Center - Strasbourg, Strasbourg, France(L 1-3)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Advancement in Future Applications with III-Nitrides by Fusion Technology between Epitaxy and Processing2013
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
- Organizer
  International Workshop on Ultra-Precision Processing for III Nitride Semiconductor and Devices (WUPP for Nitride)
- Place of Presentation
  Santa Barbara(USA)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates2013
- Author(s)
  N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, K. Tadatomo
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Bavaria(Germany)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates2013
- Author(s)
  N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, K. Tadatomo
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Bavaria, Germany(Invited oral Presentation)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC Metropolitan Area(USA)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] 半極性面 {11-22} InGaN下地層を用いたLEDにおける下地層膜厚依存性2013
- Author(s)
  中尾洸太，三好清太，内田健充，山根啓輔，岡田成仁，只友一行
- Organizer
  平成25年春季第60回応用物理学会関係連合学術講演会
- Place of Presentation
  神奈川工科大学（神奈川）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates2013
- Author(s)
  N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, and K. Tadatomo
- Organizer
  E-MRS 2013 SPRING MEETING
- Place of Presentation
  Congress Center - Strasbourg, Strasbourg, France(L P1-1)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Transmission Electron Microscope Characterization on {20-21} GaN Layers on Patterned Sapphire Substrates2013
- Author(s)
  T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
- Organizer
  The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2012)
- Place of Presentation
  New Taipei City(Taiwan)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement on Flatness of GaN Layer and Utilization Efficiency of Ga Source by Flow Modulation on Hydride Vapor Phase Epitaxy2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Bavaria (Germany)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Advancement in future applications with III-Nitrides by fusion technology between epitaxy and prosessing2013
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
- Organizer
  Workshop on Ultra-Precision Processing for III-Nitride (WUPP for III-Nitride)
- Place of Presentation
  Santa Barbara, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21}GaN on Patterned Sapphire Substrate2013
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  International Symposium on Optomechatronic Technologies 2013 (ISOT2013)
- Place of Presentation
  Ramada Plaza Jeju Hotel, Jeju Island (Korea)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] 「非極性面LEDの現状と課題」固体光源分科会2013
- Author(s)
  岡田成仁
- Organizer
  視覚・色・光環境分科会公開研究会「照明用LEDの開発と応用の最新技術動向」
- Place of Presentation
  日本大学理工学部,東京都
- Year and Date
  2013-01-17
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] InGaN下地層および正孔ブロッキング層を用いた半極性 {11-22} LEDの作製及び評価2013
- Author(s)
  中尾洸太, Muhammad Haziq, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  2013年第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学(京都府京田辺）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, ａｎｄ K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Generation of Defects by Glide m-planes in Semipolar GaN Layers2013
- Author(s)
  N. Okada, A. Ishikawa, K. Yamane, K. Tadatomo, U. Jahn, H. T. Grahn
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(AP3.03)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gayload National Hotel and Convention Center, Washington DC Metropolitan Area, USA(Poster presentation)(AP3.06)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Analysis of surface potential of GaN layers by Kelvin Force Microscopy2013
- Author(s)
  N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo
- Organizer
  32nd Electronic Materials Symposium (EMS-32)
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県守山市）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] サファイア加工基板上{20-21}GaNの積層欠陥の低減2013
- Author(s)
  小山正和, 稲垣卓志, 橋本健宏, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  ナノ構造・エピタキシャル成長分科会第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学（大阪府吹田市）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Analysis of Surface Potential of Various Oriented GaN layers via Kelvin Force Microscopy2013
- Author(s)
  N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University, Kyoto, Japan(Poster presentation)(19p-PM4-19)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Hydride vapor phase epitaxy of semipolar GaN using GaN templates grown on patterned sapphire substrates2013
- Author(s)
  N. Okada, H. Furuya, Y. Hashimoto, K. Yamane, and K. Tadatomo
- Organizer
  E-MRS 2013 SPRING MEETING
- Place of Presentation
  Congress Center - Strasbourg(France)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Advancement in Future Applications with III-Nitrides by Fusion Technology between Epitaxy and Processing2013
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
- Organizer
  International Workshop on Ultra-Precision Processing for III Nitride Semiconductor and Devices (WUPP for Nitride)
- Place of Presentation
  Santa Barbara, California, USA(Invited oral Presentation)
- Invited
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Analysis of Surface Potential of Various Oriented GaN layers via Kelvin Force Microscopy2013
- Author(s)
  N. Okada, T. Yamamoto, K. Yamane, K. Tadatomo
- Organizer
  JSAP-OSA Joint Symposia 2013
- Place of Presentation
  Doshisya University（Kyoto Tanabe)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Growth of Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy2012
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya
- Organizer
  2012 German-Japan-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Germany, Berlin:Japanese-German Center Berlin
- Year and Date
  2012-07-21
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Growth of free standing Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy2012
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya
- Organizer
  Intensive Discussion on Crystal Growth of Nitride Semiconductors
- Place of Presentation
  Sendai : Tohoku University
- Year and Date
  2012-10-22
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] Improvement in performance of light-emitting diodes fabricated on semipolar {11-22} GaN template using thick InGaN layers2012
- Author(s)
  N. Okada, M. Haziq, Y. Hirota, K. Uchida, Y. Fukuda, S. Miyoshi, K. Yamane, and K. Tadatomo
- Organizer
  International Symposium on Semiconductor Light Emitting Devices 2012
- Place of Presentation
  Berlin （Germany）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長法による非極性面GaNの厚膜成長2012
- Author(s)
  只友一行,岡田成仁,山根啓輔
- Organizer
  第137回結晶工学分科会研究会
- Place of Presentation
  京都テルサ,京都
- Year and Date
  2012-06-15
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] 緩和した半極性面 {11-22} InGaN上へのLEDの作製2012
- Author(s)
  内田健充，三好清太，山根啓輔，岡田成仁，只友一行
- Organizer
  平成24年秋季第73回応用物理学会関係連合学術講演会
- Place of Presentation
  愛媛大学（愛媛）
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] ハイドライド気相成長による非極性面GaNの低転位化メカニズム2012
- Author(s)
  岡田成仁,上野元久,内田健充,古家大士,山根啓輔,只友一行
- Organizer
  平成24年秋季第73回応用物理学会関係連合学術講演会
- Place of Presentation
  愛媛大学,愛媛県(12p-H9-8)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] n面サファイア加工基板上c面側壁からの半極性{10-11}面GaN選択横方向成長2010
- Author(s)
  高見成希, 栗栖彰宏, 村上一馬, 岡田成仁, 只友一行
- Organizer
  平成22年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学, 神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 窒化処理を行ったサファイア加工基板上GaNの側壁選択成長2010
- Author(s)
  岡田成仁, 大下弘康, 栗栖彰宏, 川嶋佑治, 只友一行
- Organizer
  成22年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学, 神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] {11-22}GaN上の厚膜InGaNの成長と評価2010
- Author(s)
  岡田成仁
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県,神奈川工科大学(地震の影響で中止。予稿集の発行を以って発表したと見なす)
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] マスクレスm面サファイア加工基板上の非極性GaNの成長2010
- Author(s)
  大下弘康, 阿部結樹, 村上一馬, 岡田成仁, 只友一行
- Organizer
  平成22年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学, 神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 窒化処理を行ったサファイア加工基板上GaNの側壁選択成長2010
- Author(s)
  岡田成仁
- Organizer
  平成22年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学,神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] テラス幅の広いr面サファイア加工基板を用いた(11-22) GaNの成長2010
- Author(s)
  栗栖彰宏, 村上一馬, 阿部結樹, 品川拓, 岡田成仁, 只友一行
- Organizer
  平成22年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学, 神奈川県
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 異種面で構成された窒化物半導体上の多重量子井戸の評価2010
- Author(s)
  岡田成仁
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第2回窒化物結晶成長講演会
- Place of Presentation
  三重県, 三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] 窒化処理を行ったサファイア加工基板上GaNの側壁選択成長2010
- Author(s)
  岡田成仁, 他
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] マスクレスサファイア加工基板上の非極性GaNの成長メカニズム2009
- Author(s)
  川嶋佑治, 村上一馬, 阿部結樹, 栗栖彰宏, 岡田成仁, 只友一行
- Organizer
  平成21年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学, 富山県
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] r面サファイア加工基板上c面側壁からの半極性(11-22)GaN選択横方向成長とLEDへの応用2009
- Author(s)
  栗栖彰宏, 南雅博, 河野創一郎, 石田文男, 光井靖智, 村上一馬, 李伯成, 松本大志, 岡田成仁, 只友一行
- Organizer
  平成21年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学, 茨城県
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] r面サファイア加工基板上c面側壁からの半極性(11-22)GaN選択横方向成長2009
- Author(s)
  高見成希, 栗栖彰宏, 村上一馬, 李伯成, 松本大志, 岡田成仁, 只友一行
- Organizer
  平成21年第11回IEEE広島支部学生シンポジウム
- Place of Presentation
  山口大学, 山口県
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 半極性(11-22) GaN成長におけるr面サファイア加工基板のオフ角の最適化2009
- Author(s)
  栗栖彰宏, 村上一馬, 阿部結樹, 松本大志, 品川拓, 岡田成仁, 只友一行
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学, 富山県
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 様々なマスクレス加工基板上の非極性面GaNの成長機構2009
- Author(s)
  岡田成仁, 大下弘康, 栗栖彰宏, 川嶋佑治, 只友一行
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋大学, 愛知県
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] Growth mechanism of nonpolar m-GaN on patterned a-plane sapphire substrate2009
- Author(s)
  Yuji Kawashima, Kazuma Murakami, BoCheng Li, Hiroyuki Matsumoto, Narihito Okada, Kazuyuki Tadatomo
- Organizer
  The 8th International Conference on Nitride Semiconductor
- Place of Presentation
  ICC, Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] 様々なマスクレス加工基板上の非極性面GaNの成長機構2009
- Author(s)
  岡田成仁
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋大学,愛知県
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] a面サファイア加工基板上に成長するm面GaNの成長配向依存性2009
- Author(s)
  川嶋佑治, 村上一馬, 李伯成, 河野創一郎, 石田文男, 岡田成仁, 只友一行
- Organizer
  平成21年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学, 茨城県
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] a面サファイア加工基板上に成長するm面GaNの成長条件依存性2009
- Author(s)
  大下弘康, 川嶋佑治, 村上一馬, 李伯成, 岡田成仁, 只友一行
- Organizer
  平成21年第11回IEEE広島支部学生シンポジウム
- Place of Presentation
  山口大学, 山口県
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] Epitaxial lateral overgrowth of semipolar (11-22) GaN from c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO2 mask2009
- Author(s)
  A. Kurisu, K. Murakami, Y. Abe, N. Okada, K. Tadatomo
- Organizer
  The 8th International Conference on Nitride Semiconductors
- Place of Presentation
  ICC, Jeju, Korea
- Year and Date
  2009-10-21
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] Direct growth of m-plane GaN on grooved-patterneda-plane sapphire substrate with SiO2 mask2008
- Author(s)
  N. Okada
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2008)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] 側壁選択横方向成長を用いたa面サファイア加工基板上のm面GaN成長2008
- Author(s)
  川嶋佑治, 村上一馬, 松本大志, 李伯成, 河野創一郎, 光井靖智, 石田文男, 岡田成仁, 只友一行
- Organizer
  平成20年秋季第69回応用物理学関係連合講演会
- Place of Presentation
  中部大学, 愛知県
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] Direct growth of m-plane GaN on grooved-patterned a-plane sapphire substrate with SiO_2 mask2008
- Author(s)
  N.Okada
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2008)
- Place of Presentation
  Montreux, Switzerland.
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PROJECT-20360141
[Presentation] Direct growth of m-plane GaN on grooved-patterned a-plane sapphire substrate with SiO2 mask2008
- Author(s)
  N. Okada, Y. Kawashima, K. Tadatomo
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] Direct growth of m-plane GaN on grooved-patterned a-plane sapphire substrate with SiO_2, mask2008
- Author(s)
  N. Okada
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  スイス
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-20860057
[Presentation] Fabrication of InGaN based plasmonic LED with thin p-type layer
- Author(s)
  T. Tsukada, K. Yamane, N. Okada, K. Tadatomo, K. Tateishi, K. Okamoto
- Organizer
  15th International Union of Materials Research Societies, International Conference in Asia (IUMRS-ICA)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] 局在プラズモンを用いたInGaN系LEDの作製と評価
- Author(s)
  塚田哲朗、岡田成仁、只友一行、立石和隆、岡本晃一
- Organizer
  第75回応用物理学会関係連合学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Efficient InGaN-based Plasmonic Light-Emitting Diodes with Thin p-type Layers
- Author(s)
  K. Okamoto, K. Tateishi, K. Tamada, T. Tsukada, N. Okada, K. Tadatomo
- Organizer
  The 10th Asia-Pacific Conference on Near-field Optics (APNFO10)
- Place of Presentation
  Hakodate, Japan
- Year and Date
  2015-07-07 – 2015-07-10
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Plasmonic light-emitting diodes with thin p-type layer and localized-Ag layer embedded by ITO
- Author(s)
  N. Okada, T. Tsukada, K. Tadatomo, K. Okamoto
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'15)
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26289109
[Presentation] Free standing GaN substrate grown on patterned sapphire substrate
- Author(s)
  K. Tadatomo K. Yamane, N. Okada
- Organizer
  PolarCoN Summer Seminar 2014
- Place of Presentation
  Bensheim, Germany
- Year and Date
  2014-09-24 – 2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Transmission Electron Microscope Characterization on {20-21} GaN Layers on Patterned Sapphire Substrates
- Author(s)
  T. Inagaki, K. Yamane, Y. Hashimoto, M. Koyama, N. Okada, K. Tadatomo
- Organizer
  The 6th Asia-Pacific Workshop on Widegap Semiconductors (APWS2012)
- Place of Presentation
  Fullon Hotel Danshuei Fishermen's Wharf, Tamsui, New Taipei City, Taiwan(Oral presentation)
- Data Source
  KAKENHI-PROJECT-24760012
[Presentation] HVPE成長した半極性｛20-21｝面GaNと｛20-2-1｝面GaNの結晶性比較
- Author(s)
  橋本健宏，稲垣卓志，中尾洸太，山根啓輔，岡田成仁，只友一行
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌市, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289088

1. TADATOMO Kazuyuki (10379927)

# of Collaborated Projects: 4 results

# of Collaborated Products: 38 results
2. KUWANO Noroyoki (50038022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. YAMADA Youichi (00251033)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
4. SAKAI Akira (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
5. Okamoto Koichi (50467453)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
6. 山根啓輔 (80610815)

# of Collaborated Projects: 1 results

# of Collaborated Products: 21 results
7. 山田洋明 (00455099)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
8. 姚永昭 (80523935)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. Han Jung

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 倉井聡

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
11. 川上養一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
12. 船戸充

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Okada Narihito 岡田 成仁

岡田 成仁 オカダ ナリヒト

OKADA Narihito 岡田 成仁

Research Projects

Research Products

Co-Researchers

Proposal of new nitride semiconductor electronic device structure using AlN substrate and its crystal growthPrincipal Investigator

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Operation of V-pit formation originated from dislocations and clarification of dislocation invalidation mechanism in GaN-based LEDsPrincipal Investigator

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High performance and controlling optical polarization for unpolar optical devices using hetero middle layerPrincipal Investigator

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Development of fundamental technologies for highly efficient plasmonic optical and electronic devices

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Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate

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Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN templatePrincipal Investigator

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Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes

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Evaluation of crystalline quality of GaInN grown on high-quality nonpolar or semipolar GaNPrincipal Investigator

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[Journal Article] Effect of the Twist Crystallinity of N-Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures2024

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[Journal Article] Growth Mechanism of N-Polar GaN on Vicinal N-Polar AlN Templates in Metal-Organic Vapor Phase Epitaxy2024

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[Journal Article] Electrical Properties of N-Polar GaN/AlGaN/AlN Grown via Metal-Organic Vapor Phase Epitaxy2024

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[Journal Article] Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion2024

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[Journal Article] Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT2020

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[Journal Article] Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing2019

Okada Narihito 岡田成仁

岡田成仁オカダナリヒト

OKADA Narihito 岡田成仁