Oshima Yuichi 大島祐一

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OSHIMA Yuichi 大島祐一

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Researcher Number	70623528
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 2019: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 2017 – 2018: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 2015: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 2015: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 2013 – 2014: 独立行政法人物質・材料研究機構, その他部局等, その他 2013 – 2014: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員
Review Section/Research Field	Principal Investigator Crystal engineering Except Principal Investigator Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials
Keywords	Principal Investigator エピタキシャル / 結晶成長 / 酸化ガリウム / パワー半導体 / ワイドギャップ半導体 / 紫外線検出素子 / パワーデバイス / 酸化物半導体 / 太陽電池 / 磁性半導体 / 熱電変換 / 窒化物半導体 … More Except Principal Investigator … More 酸化ガリウム / (-102)面 / デバイス開発 / 微細加工 / パワーデバイス / パワー半導体 / ワイドギャップ半導体 / 酸化物半導体 Less

Development of Gallium Oxide Microfabricated Devices with Novel Substrate Principal Surfaces and Novel Etching Techniques
- Principal Investigator
  
  大島孝仁
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute for Materials Science
Halide vapor phase epitaxy of epsilon-Ga2O3 for optical and power device applicationsPrincipal Investigator
- Principal Investigator
  
  OSHIMA Yuichi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institute for Materials Science
Development of rapid growth technique of beta-Ga2O3 for power device applications by halide vapor phase epitaxy
- Principal Investigator
  
  Garcia Villora
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Halide Vapor Phase Epitaxy of high-quality ScNPrincipal Investigator
- Principal Investigator
  
  OSHIMA Yuichi
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institute for Materials Science

All 2020 2019 2017 2015 2014 Other

All Journal Article Presentation Patent

[Journal Article] Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy2020
- Author(s)
  Oshima Yuichi、Kawara Katsuaki、Oshima Takayoshi、Okigawa Mitsuru、Shinohe Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 2 Pages: 025512-025512
- DOI
  10.35848/1347-4065/ab6faf
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05047
[Journal Article] Hydride Vapor Phase Epitaxy of ε-Ga2O32015
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, Y. Matsushita, S. Yamamoto, and Kiyoshi Shimamura
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol. 118 Issue: 8
- DOI
  10.1063/1.4929417
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420307
[Journal Article] 異種基板上のβ-Ga2O3のHVPE成長2015
- Author(s)
  大島祐一、ガルシア　ビジョラ、島村清史
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: Vol.42[2] Pages: 141-147
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420307
[Journal Article] Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates2015
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.8 Issue: 5 Pages: 055501-055501
- DOI
  10.7567/apex.8.055501
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420307
[Journal Article] Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy2014
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH
  
  Volume: 410 Pages: 53-58
- DOI
  10.1016/j.jcrysgro.2014.10.038
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420307
[Journal Article] Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers2014
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 115 Issue: 15
- DOI
  10.1063/1.4871656
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790050
[Patent] 結晶性積層構造体および半導体装置2019
- Inventor(s)
  大島祐一、河原克明、高橋勲、四戸孝
- Industrial Property Rights Holder
  物質・材料研究機構、(株)FLOSFIA
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-17K05047
[Patent] 結晶性積層構造体の製造方法2019
- Inventor(s)
  大島祐一、河原克明、高橋勲、四戸孝
- Industrial Property Rights Holder
  物質・材料研究機構、(株)FLOSFIA
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-17K05047
[Patent] ε－Ｇａ２Ｏ３単結晶、ε－Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子2015
- Inventor(s)
  大島祐一、ガルシアビジョラ、島村清史
- Industrial Property Rights Holder
  大島祐一、ガルシアビジョラ、島村清史
- Industrial Property Rights Type
  特許
- Filing Date
  2015-06-16
- Data Source
  KAKENHI-PROJECT-25420307
[Patent] β－Ｇａ２Ｏ３単結晶層の製造方法、β―Ｇａ２Ｏ３単結晶層付きサファイア基板、β―Ｇａ２Ｏ３自立単結晶及びその製造方法2014
- Inventor(s)
  大島祐一、ガルシアビジョラ、島村清史
- Industrial Property Rights Holder
  大島祐一、ガルシアビジョラ、島村清史
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-160311
- Filing Date
  2014-08-06
- Data Source
  KAKENHI-PROJECT-25420307
[Patent] β－Ｇａ２Ｏ３単結晶膜の製造方法及びβ―Ｇａ２Ｏ３単結晶膜付きサファイア基板2014
- Inventor(s)
  大島祐一/ガルシアビジョラエンカルナシオンアントニア/島村清史
- Industrial Property Rights Holder
  大島祐一/ガルシアビジョラエンカルナシオンアントニア/島村清史
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-062483
- Filing Date
  2014-03-25
- Data Source
  KAKENHI-PROJECT-25420307
[Presentation] ワイドギャップ半導体Ga2O3の安定相の制御2020
- Author(s)
  大島祐一
- Organizer
  第67回応用物理学会春季学術講演会シンポジウム「多様な安定相のエンジニアリングによる多元系材料開発の新展開－未来材料開拓イニシアチブ～環境・エネルギー材料の未来～」
- Invited
- Data Source
  KAKENHI-PROJECT-17K05047
[Presentation] Halide Vapor Phase Epitaxy of Meta-Stable Ga2O32019
- Author(s)
  Yuichi Oshima
- Organizer
  The 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05047
[Presentation] 準安定相Ga2O3のハライド気相成長2019
- Author(s)
  大島祐一
- Organizer
  ワイドギャップ半導体光・電子デバイス第１６２委員会第113回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17K05047
[Presentation] 準安定相酸化ガリウムのハライド気相成長2017
- Author(s)
  大島祐一
- Organizer
  第78回応用物理学会秋季学術講演会シンポジウム「これからの未来を担う新ワイドギャップ酸化物材料Ga2O3」
- Invited
- Data Source
  KAKENHI-PROJECT-17K05047
[Presentation] Halide vapor phase epitaxy of α-Ga2O32015
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
- Organizer
  International Workshop on Gallium Oxide and Related Materials 2015
- Place of Presentation
  京都大学　桂キャンパス
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420307
[Presentation] Halide Vapor Phase Epitaxy of ε-Ga2O32015
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
- Organizer
  International Workshop on Gallium Oxide and Related Materials 2015
- Place of Presentation
  京都大学　桂キャンパス
- Year and Date
  2015-11-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420307
[Presentation] Halide Vapor Phase Epitaxy of β-Ga2O32015
- Author(s)
  大島祐一，ガルシア　ビジョラ、島村　清史
- Organizer
  39th International Conference and Expo on Advanced Ceramics and Composites
- Place of Presentation
  Hilton Daytona Beach Resort and Ocean Center,Daytona beach Florida,USA
- Year and Date
  2015-01-27
- Invited
- Data Source
  KAKENHI-PROJECT-25420307
[Presentation] 異種基板上のβ-Ga2O3のHVPE成長2014
- Author(s)
  大島祐一，ガルシア　ビジョラ、島村　清史
- Organizer
  日本結晶成長学会・バルク成長分科会研究会「機能性単結晶の最近の進展」
- Place of Presentation
  早稲田大学　西早稲田キャンパス　55号館2階第3会議室,東京都
- Year and Date
  2014-10-02
- Invited
- Data Source
  KAKENHI-PROJECT-25420307
[Presentation] HVPE法によるScNの成長と評価2014
- Author(s)
  大島祐一，ガルシア　ビジョラ、島村　清史
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25790050
[Presentation] Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
- Author(s)
  Yuichi Oshima, Encarnacion G. Villora, and Kiyoshi Shimamura
- Organizer
  International Workshop on Nitride semiconductors 2014
- Place of Presentation
  Wroclaw Centennial Hall,Wroclaw,Poland
- Year and Date
  2014-08-25 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25790050
[Presentation] ハイドライド気相成長法による窒化スカンジウムの成長と評価
- Author(s)
  大島祐一，ガルシア　ビジョラ、島村　清史
- Organizer
  2014年電気化学会秋季大会
- Place of Presentation
  北海道大学高等教育推進機構,札幌市
- Year and Date
  2014-09-27 – 2014-09-28
- Data Source
  KAKENHI-PROJECT-25790050

1. Garcia Villora (90421411)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
2. SHIMAMURA Kiyoshi (90271965)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
3. 大島孝仁 (60583151)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Oshima Yuichi 大島 祐一

OSHIMA Yuichi 大島 祐一

Research Projects

Research Products

Co-Researchers

Development of Gallium Oxide Microfabricated Devices with Novel Substrate Principal Surfaces and Novel Etching Techniques

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Halide vapor phase epitaxy of epsilon-Ga2O3 for optical and power device applicationsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of rapid growth technique of beta-Ga2O3 for power device applications by halide vapor phase epitaxy

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Halide Vapor Phase Epitaxy of high-quality ScNPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Hydride Vapor Phase Epitaxy of ε-Ga2O32015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 異種基板上のβ-Ga2O3のHVPE成長2015

Author(s)

Journal Title

Data Source

[Journal Article] Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers2014

Author(s)

Journal Title

DOI

Data Source

[Patent] 結晶性積層構造体および半導体装置2019

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] 結晶性積層構造体の製造方法2019

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] ε－Ｇａ２Ｏ３単結晶、ε－Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子2015

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] β－Ｇａ２Ｏ３単結晶層の製造方法、β―Ｇａ２Ｏ３単結晶層付きサファ イア基板、β―Ｇａ２Ｏ３自立単結晶及びその製造方法2014

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Oshima Yuichi 大島祐一

OSHIMA Yuichi 大島祐一

[Patent] β－Ｇａ２Ｏ３単結晶層の製造方法、β―Ｇａ２Ｏ３単結晶層付きサファイア基板、β―Ｇａ２Ｏ３自立単結晶及びその製造方法2014

[Presentation] 準安定相酸化ガリウムのハライド気相成長2017