Seki Yuhei 関裕平

… Alternative Names

関裕平セキユウヘイ

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Researcher Number	70937367
Other IDs
Affiliation (Current)	2026: 北海道大学, 工学研究院, 博士研究員
Affiliation (based on the past Project Information) *help	2023 – 2024: 神奈川大学, 付置研究所, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator 不純物ドーピング / イオン注入 / 半導体 / パワーデバイス / ダイヤモンド

イオン注入法でのドーパント注入によるダイヤモンド半導体の電気伝導制御の確立Principal Investigator
- Principal Investigator
  
  関裕平
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kanagawa University

All 2025 2024 2023

All Journal Article Presentation

[Journal Article] The origin of degradation in electrical properties by ion implantation doping of boron in diamond2025
- Author(s)
  Seki Yuhei、Yoshihara Minami、Hoshino Yasushi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 137 Issue: 18 Pages: 185701-185701
- DOI
  10.1063/5.0272310
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K13369
[Journal Article] Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond2024
- Author(s)
  Seki Yuhei、Yoshihara Minami、Kim Seong‐Woo、Koyama Koji、Hoshino Yasushi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 221 Issue: 18 Pages: 2400159-2400159
- DOI
  10.1002/pssa.202400159
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03930, KAKENHI-PROJECT-23K13369
[Journal Article] ELECTRICAL CHARACTERIZATION OF LIGHTLY B ION-IMPLANTED HETEROEPITAXIAL DIAMOND2024
- Author(s)
  Yoshihara Minami、Seki Yuhei、Shiraishi Takuya、Hoshino Yasushi
- Journal Title
  
  PROCEEDINGS OF THE 42nd SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY
  
  Volume: 42 Pages: 29-33
- Data Source
  KAKENHI-PROJECT-23K13369
[Journal Article] Optimization of Activation Annealing Condition for Boron‐Implanted Diamond2023
- Author(s)
  Seki Yuhei、Kurashima Rintaro、Yoshihara Minami、Hoshino Yasushi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 220 Issue: 19
- DOI
  10.1002/pssa.202300522
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K13369, KAKENHI-PROJECT-23K03930
[Presentation] ダイヤモンドへの高濃度Bイオン注入による低抵抗層形成2025
- Author(s)
  今村　海哉, 関　裕平, 星野　靖
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] Bイオン注入による高圧高温合成Ib型ダイヤモンドの電気伝導制御2025
- Author(s)
  関裕平，今村海哉, 星野靖
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] ダイヤモンドへの高濃度Bイオン注入による低抵抗ドープ層形成における注入時基板温度依存性2024
- Author(s)
  今村海哉、関裕平、星野靖
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] 高濃度P+イオン注入によるn型ダイヤモンド半導体形成に向けた研究2024
- Author(s)
  関裕平、今村海哉、星野靖
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] 高純度ホモエピタキシャルCVDダイヤモンドへの低濃度Bイオン注入によるp型伝導層の形成と補償の影響2024
- Author(s)
  関裕平、吉原実奈美、星野靖
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] Compensation effect by deep donor center on B-implanted diamond at low concentrations2024
- Author(s)
  Yuhei Seki, Minami Yoshihara, Yasushi Hoshino
- Organizer
  34th international conference on diamond and carbon materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] B注入IIa型CVDダイヤモンドの電気特性への活性化アニール時間の影響2023
- Author(s)
  関裕平、倉島凛太郎、吉原実奈美、星野靖
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] 高純度ダイヤモンドへの低濃度Bイオン注入によるp型電気伝導層形成2023
- Author(s)
  吉原実奈美、関裕平、星野靖
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13369
[Presentation] Optimization of activation annealing time for diamond doped by B ion implantation2023
- Author(s)
  Yuhei Seki, Rintaro Kurashima, Minami Yoshihara, Yasushi Hoshino
- Organizer
  33rd International Conference on Diamond and Carbon Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13369

1. 星野靖

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Seki Yuhei 関 裕平

関 裕平 セキ ユウヘイ

Research Projects

Research Products

Co-Researchers

イオン注入法でのドーパント注入によるダイヤモンド半導体の電気伝導制御の確立Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] The origin of degradation in electrical properties by ion implantation doping of boron in diamond2025

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] ELECTRICAL CHARACTERIZATION OF LIGHTLY B ION-IMPLANTED HETEROEPITAXIAL DIAMOND2024

Author(s)

Journal Title

Data Source

[Journal Article] Optimization of Activation Annealing Condition for Boron‐Implanted Diamond2023

Author(s)

Journal Title

DOI

Data Source

[Presentation] ダイヤモンドへの高濃度Bイオン注入による低抵抗層形成2025

Author(s)

Organizer

Data Source

[Presentation] Bイオン注入による高圧高温合成Ib型ダイヤモンドの電気伝導制御2025

Author(s)

Organizer

Data Source

[Presentation] ダイヤモンドへの高濃度Bイオン注入による低抵抗ドープ層形成における注入時基板温度依存性2024

Author(s)

Organizer

Data Source

[Presentation] 高濃度P+イオン注入によるn型ダイヤモンド半導体形成に向けた研究2024

Author(s)

Organizer

Data Source

[Presentation] 高純度ホモエピタキシャルCVDダイヤモンドへの低濃度Bイオン注入によるp型伝導層の形成と補償の影響2024

Author(s)

Organizer

Data Source

[Presentation] Compensation effect by deep donor center on B-implanted diamond at low concentrations2024

Author(s)

Organizer

Data Source

[Presentation] B注入IIa型CVDダイヤモンドの電気特性への活性化アニール時間の影響2023

Author(s)

Organizer

Data Source

[Presentation] 高純度ダイヤモンドへの低濃度Bイオン注入によるp型電気伝導層形成2023

Author(s)

Organizer

Data Source

[Presentation] Optimization of activation annealing time for diamond doped by B ion implantation2023

Author(s)

Organizer

Data Source

Seki Yuhei 関裕平

関裕平セキユウヘイ