KAWAMURA Yuichi 河村裕一

Researcher Number	80275289
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2015 – 2017: 大阪府立大学, 工学(系)研究科(研究院), 教授 2014: 大阪府立大学, 大学院工学研究科, 教授 2013: 大阪府立大学, 工学(系)研究科(研究院), 教授 2011 – 2012: 大阪府立大学, 地域連携研究機構, 教授 2008 – 2009: Osaka Prefecture University, 産学官連携機構, 教授 2007: Osaka Prefecture University, 産学官連携機構, 准教授 1996 – 2000: 大阪府立大学, 先端科学研究所, 助教授
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Crystal engineering Except Principal Investigator Applied optics/Quantum optical engineering / 固体物性Ⅱ(磁性・金属・低温) / Condensed matter physics II
Keywords	Principal Investigator 量子井戸構造 / GaAsSb / InGaAsN / 中赤外デバイス / 量子井戸 / 分子線結晶成長 / 化合物半導体 / 量子効果光デバイス / ヘテロ界面 / バンド不連続 … More / As / タイプII構造 / タイプII量子井戸 / 中赤外光デバイス / 中赤外発光素子 / InP基板 / 分子線結晶成長法 / quantum effect devices / hetero-interface / band off-set / Sb system / type II structure / photonic devices / molecular beam epitaxy / quantum well structure / 非対称量子井戸構造 / タイプI構造 / 分子線エピタキシー / InAsSbN / エピタキシー / 量子ナノ構造 / 赤外光デバイス / 窒素 / アンチモン / ＭＢＥ / 赤外デバイス / 食品検査 / 医療応用 / リモートセンシング / 環境計測 / 分子線成長法 / 赤外光素子 / ヘテロ構造 / Sb系 / 長波長レーザ / 分子線エピタキシ- … More Except Principal Investigator inter-subband transition / III-V nitride / quantum well / MOVPE / MOCVD / GaN / quantum-well / MOCUD / inter-subland transition / III-V Nitride / α-(BEDT-TTF)ィイD22ィエD2NHィイD24ィエD2Hg(SCN)ィイD24ィエD2 / YbィイD24ィエD2AsィイD23ィエD2 / CeRuィイD22ィエD2 / Electron spin resonance / Surface impedance / Cyclotron resonance / Microwave / 有機伝導体 / 重い電子系 / 超伝導体 / マイクロ波吸収 / 強相関電子系 / 低密度磁性金属 / Yb_4As_3 / α-(BEDT-TTF)_2NX_4Hg(SCN)_4 / Yb_4AS_3 / CeRu_2 / 電子スピン共鳴 / 表面インピーダンス / サイクロトロン共鳴 / マイクロ波測定 / 銅酸化物超伝導体 / 超伝導磁束量子 / 超伝導論理デバイス / 超伝導接合 / 超伝導ナノ構造 Less

Fabrication of mid- infrared devices with nwe nano-structurePrincipal Investigator
- Principal Investigator
  
  Kawamura Yuichi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Osaka Prefecture University
Fabrication of d-dot by using high temperature oxide superconductor BSCCO single crystal and creation of logic circuit
- Principal Investigator
  
  KAWAMATA Shuichi
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics II
- Research Institution
  Osaka Prefecture University
studies of mid-infrared devices using new materials and structuresPrincipal Investigator
- Principal Investigator
  
  KAWAMURA Yuichi
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Prefecture University
Study of InAsSbN/GaAsSbN new type quantum structure device in the infra-red wavelength region.Principal Investigator
- Principal Investigator
  
  KAWAMURA Yuichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Prefecture University
Research of new functional photonic devices using asymmetric type II quantum well structure.Principal Investigator
- Principal Investigator
  
  KAWAMURA Yuichi
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Research Institute for Advanced Science and Technology(RIAST), Osaka Prefecture University
Microwave Absorption in Low-Carrier Density and Strongly Correlated Electron Systems at Low Temperature under High Magnetic Field
- Principal Investigator
  
  TOYOTA Naoki
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  固体物性Ⅱ(磁性・金属・低温)
- Research Institution
  TOHOKU UNIVERSITY
  Osaka Prefecture University
Study of short-wavelength intersubband luminescence in nitride semiconductors
- Principal Investigator
  
  MORIMORO Keizo
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Osaka Prefecture University
タイプII量子井戸構造を用いた低温度依存性長波長帯レーザの研究Principal Investigator
- Principal Investigator
  
  河村裕一
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka Prefecture University

All 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Book Patent

[Book] 光技術動向調査報告書2007
- Author(s)
  河村裕一(分担執筆)
- Total Pages
  450
- Publisher
  光産業技術振興協会
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates2017
- Author(s)
  Y. Kawamura, I. Shishido, S. Tanaka and S. Kawamata
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 214
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04666
[Journal Article] Effective Mass of Two-dimensional Electrons in InGaAsN/GaAsSb Type II Quantum Well by Shubnikov-de Haas Oscillations2016
- Author(s)
  S. Kawamata, H. Hibino, S. Tanaka and Y. Kawamura
- Journal Title
  
  Jarnal of Applied Physics
  
  Volume: 120
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04666
[Journal Article] 半導体結晶と光素子への応用2015
- Author(s)
  河村裕一
- Journal Title
  
  光技術コンタクト
  
  Volume: 53 Pages: 4-9
- Data Source
  KAKENHI-PROJECT-15K04666
[Journal Article] 2.86mm room-temperature light emission of InGaAsN.GaAsSb type II quantum well diodes grown on InP substrates2014
- Author(s)
  Y. Kawamura and T. Shahasi
- Journal Title
  
  Jpn.J.Appl. Phys.
  
  Volume: 53 Pages: 28004-28004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Type II InAs?GaSb superlattice grown on InP substrate2013
- Author(s)
  K. Miura, Y. Iguchi and Y. Kawamura
- Journal Title
  
  J. Crystal Growth
  
  Volume: 378 Pages: 121-124
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] The growth of high quarity GaAsSb and Type II InGaAs/GaAsSb superlattice structure2013
- Author(s)
  K. Miura, Y. Iguchi, M. Thubokura and Y. Kawamura
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113 Pages: 143506-143506
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] The growth of high quality GaAsSb and Type II InAs/GaSb SL2013
- Author(s)
  K. Miura, Y. Iguchi, M. Tsubokura and Y. Kawamura
- Journal Title
  
  J. App. Phys.
  
  Volume: 113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Type II InAs/GaSb superlattice grown on InP substrate2013
- Author(s)
  Miura, Y. Iguchi and Y. Kawamura
- Journal Title
  
  J. Crystal Growth
  
  Volume: 378 Pages: 121-124
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Optical properties of InAsSbN SQW grown on InP substrate2013
- Author(s)
  T. Shono, S. Mizuta and Y. Kawamura
- Journal Title
  
  J. Crystal Growth
  
  Volume: 378 Pages: 69-72
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Optical proreties of InAsSbN single quantum wells grown on InP substrates for 2mm vawelength Region2013
- Author(s)
  T. Shono, S. Mizuta and Y. Kawamura
- Journal Title
  
  J. Crystal growth
  
  Volume: 378 Pages: 69-72
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Fabrication of InGaAsN/AlAsSb resonant tunneling diodes grown by molecular beam epitaxy2012
- Author(s)
  Y. Kawamura and K. Mitsuyoshi
- Journal Title
  
  Electron. Lett.
  
  Volume: 48 Pages: 280-281
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] fabrication of InGaAsN/AlAsSb resonant tunnelingdiodes on InP2012
- Author(s)
  Y. Kawamura and K Mitsuyoshi
- Journal Title
  
  Electronics Letters
  
  Volume: 48 Issue: 5 Pages: 280-281
- DOI
  10.1049/el.2012.0186
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Characterization of InGaAsSbN layers grown on InP by MBE2011
- Author(s)
  M. Yoshikawa, K. Miura, Y. Iguchi and Y. Kawamura
- Journal Title
  
  Phys. Status Solidi
  
  Volume: C8 N0.2 Pages: 390-392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Characterization of InGaAsSbN layers grown on InP2011
- Author(s)
  M.Yoshikawa, K. Miura, Y. Iguchi and Y. Kawamura
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 8 Pages: 390-392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560012
[Journal Article] Optical characterization of InGaAsN layers grown on InP substrates2009
- Author(s)
  M.Yoshikawa, K.Miura, Y.Iguchi, Y.Kawamura
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 1745-1747
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Optical characterization of InGaAsN layers grown on InP substrates2009
- Author(s)
  M. Yoshikawa, K. Miura, Y. Iguchi, Y. Kawamura
- Journal Title
  
  J. Crystal Growth vol.311
  
  Pages: 1745-1745
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] InP-based InGaAsSbN quantum well laser diodes in 2μm wavelength region2008
- Author(s)
  Y. Kawamura
- Journal Title
  
  IEEJ Transactions on Electronics, Information and Systems Vol.128No.5
  
  Pages: 727-727
- NAID
  10021132313
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] InP-based InGaAsSbN quantum well laser diodes in 2μm wavelengthregion2008
- Author(s)
  Y. Kawamura
- Journal Title
  
  IEEJ Transactions on Electronics, Information and Systems 128
  
  Pages: 727-233
- NAID
  10021132313
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Effect of Sb incorporation on electroluminescence of InGaAsSbN quantum well diodes on GaAs substrates2008
- Author(s)
  Y. Kawamura, M. Nishino
- Journal Title
  
  Japanese. Journal of Applied. Physics 47
  
  Pages: 6302-6303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Effect of Sb incorporation on electroluminescence of InGaAsSbN quantum well diodes on GaAs substrates2008
- Author(s)
  Y. Kawamura, M. Nishino
- Journal Title
  
  Jpn. J. Appl. Phys vol.47No.8
  
  Pages: 6302-6302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Improvement of crystal quality of thick InGaAsN layers grown on InP substrates2007
- Author(s)
  K. Miura, Y. Nagai, Y. Iguchi, H. Okada, Y. Kawamura
- Journal Title
  
  Journal of Crystal Growth 301
  
  Pages: 575-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] EL of InGaAsN/GaAsSb Type II quanrum well light emitting diodes grown on InP by molecular beam epitaxy2007
- Author(s)
  Y, Kawamura, N. Inoue
- Journal Title
  
  Jpn. J. Appl. Phys 46,6A
  
  Pages: 457-457
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony2007
- Author(s)
  K. Miura, Y. Nagai, Y. Iguchi, H. Okada, Y. Kawamura
- Journal Title
  
  J. Crystal Growth
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Atomic arrangement in an MBE-grown CuPt-B type ordered GaAsSb layer as observed by cross sectional scanning tunneling microscope2007
- Author(s)
  Gomyo, S. Ohkouchi, Y. Kawamura
- Journal Title
  
  J. Crystal Growth 301
  
  Pages: 47-47
- Data Source
  KAKENHI-PROJECT-19560016
[Journal Article] Electroluminescence of InGaAsN/GaAsSb Type II quanrum well light emitting diodes grown on InP by molecular beam epitaxy2007
- Author(s)
  Y. Kawamura, N. Inoue
- Journal Title
  
  Japanese Joumal of Applied Physics 46
  
  Pages: 2280-3381
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560016
[Patent] 半導体素子2008
- Inventor(s)
  河村裕一
- Industrial Property Rights Holder
  大阪府立大学
- Industrial Property Number
  2008-119978
- Filing Date
  2008-08-10
- Data Source
  KAKENHI-PROJECT-19560016
[Patent] 半導体素子2008
- Inventor(s)
  河村裕一
- Industrial Property Rights Holder
  大阪府立大学
- Filing Date
  2008-08-07
- Data Source
  KAKENHI-PROJECT-19560016
[Patent] 半導体ウェハ・その製造2007
- Inventor(s)
  河村裕一
- Industrial Property Rights Holder
  大阪府立大学
- Filing Date
  2007-07-07
- Data Source
  KAKENHI-PROJECT-19560016
[Patent] 受光デバイス2007
- Inventor(s)
  河村裕一
- Industrial Property Rights Holder
  大阪府立大学
- Filing Date
  2007-05-15
- Data Source
  KAKENHI-PROJECT-19560016
[Patent] 新規受光素子2007
- Inventor(s)
  河村裕一
- Industrial Property Rights Holder
  大阪府立大学
- Filing Date
  2007-04-10
- Data Source
  KAKENHI-PROJECT-19560016
[Patent] 光受光素子2007
- Inventor(s)
  河村裕一
- Industrial Property Rights Holder
  大阪府立大学
- Industrial Property Number
  2007-190281
- Filing Date
  2007-07-23
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] (111)InP基板上のMBE成長InGaAs/InAlAs 量子井2017
- Author(s)
  河村裕一、谷口あずさ
- Organizer
  応用物理学会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] (111)面InP基板上のInGaAs/InAlAs単一量子井戸の成長2017
- Author(s)
  河村裕一、谷口つばさ
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] Annealing Effect on Effective Mass of Two-dimensional Electrons in InGaAsN/GaAsSb Type II Quantum Well2017
- Author(s)
  Shuichi Kawamata, Sho Tanaka, Akira Hibino, Yuichi Kawamura
- Organizer
  低温物理国際会議
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] (111)面InP基板上のinGaAs/InAlAs歪単一量子井戸の成長2017
- Author(s)
  河村裕一、谷口つばさ
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] InGaAs/GaAsSbタイプII量子井戸構造における２次元電子の伝導特性III2016
- Author(s)
  田中章, 川又修一, 日比野暁, 河村裕一
- Organizer
  日本物理学会
- Place of Presentation
  金沢
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] InP基板上のMBE成長GaSb層の特性評価2016
- Author(s)
  史豊銓、三浦広平、猪口康博、河村裕一
- Organizer
  応用物理学会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] InGaAsN/GaAsSbタイプIIﾀﾞｲｵｰﾄﾞのアニール効果（II）2016
- Author(s)
  河村裕一、宍戸郁也、田中章、川又修一
- Organizer
  応用物理学会講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] Pbに囲まれたBSCCO単結晶ｄドットの作製2015
- Author(s)
  川又修一、瀬川将弘、二神敦、河村裕一、加藤勝、石田武和
- Organizer
  ワークショップ「ナノ構造超伝導体における渦糸物理」
- Place of Presentation
  東京大学（東京都）
- Year and Date
  2015-01-23
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] Effective Mass of Two-dimensional Electrons in InGaAsN/GaAsSb Type II Quantum Well by Shubnikov-de Haas Oscillation2015
- Author(s)
  S. Kawamata, A. Hibino, S. Tanaka, Y. Kawamura
- Organizer
  2nd International Symposium on Frontiers in Materials Science
- Place of Presentation
  早稲田大学（東京都新宿区）
- Year and Date
  2015-11-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04666
[Presentation] Mid-infrared photodetectors with InAs/GaSb typeII quantum wells grown on InP substrate2013
- Author(s)
  H. Inada, K, Miura, Y. Iguchi , Y. Kawamura, H. Katayama, and M. Kimata
- Organizer
  Thhe 25^<th> International Conference on InP and related materials
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] Optical properties of InAsSbN single quantum wells grown on InP substrates for 2μm wavelength region2012
- Author(s)
  T. Shono, M. Mizuta and Y. Kawamura
- Organizer
  The 17^<th> International Conference of Molecuar Beam Epitaxy TuA-2-4
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] Optical properties of InAsSbN SQW grown on InP2012
- Author(s)
  T. Shono, S. Mizuta, Y. Kawamura
- Organizer
  17th Int. National. Conf. of MBE
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] Fabrication and Magnetic Flux Distribution of BSCCO Single Crystal d-dot2012
- Author(s)
  S. Kawamata, M. Yamamoto, T. Yamashita, T. Yotsuya, M. Kato, Y. Kawamura and T. Ishida
- Organizer
  International workshop on Pathbreaking Phase Sciences in Superconductivity 2012 (PPSS2012)
- Place of Presentation
  Osaka Museum of History, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] BSCCO単結晶ｄドットの作製と磁束分布観測2011
- Author(s)
  川又修一, 河村裕一, 山下剛, 石田武和, 加藤勝, 四谷任
- Organizer
  東北大学金属材料研究所共同利用研究会「ナノ構造超伝導体」(招待講演)
- Place of Presentation
  東北大学（宮城県）
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] イオンミリング法を用いた超伝導複合構造ｄドットの作製2011
- Author(s)
  川又修一, 河村裕一, 山下剛, 石田武和, 加藤勝, 四谷任
- Organizer
  大阪府立大学地域連携研究機構・放射線研究センター平成22年度共同利用報告会
- Place of Presentation
  大阪府立大学（大阪府）
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] 「低炭素濃度Si結晶中の赤外吸収(7)」講演予稿第1分冊2010
- Author(s)
  井上直久, 後藤康則, 杉山隆英, 河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP基板上InAsSbN単一量子井戸のMBE成長」講演予稿集第1分冊2010
- Author(s)
  西野正嗣, 河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 「SiCの赤外吸収(2)」講演予稿第1分冊2010
- Author(s)
  井上直久, 須田良幸, 菅谷孝夫, 河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 「InGaAs/GaAsSbタイプII量子井戸を用いた非冷却赤外2次元センサアレイ」講演予稿第1分冊2010
- Author(s)
  三浦広平, 森大樹, 永井陽一, 稲田博史, 猪口康博, 河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 「InP基板上のInGaAsSbN層のアニール効果」講演予稿第1分冊2010
- Author(s)
  吉川真央, 三浦広平, 猪口康博, 河村裕一
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 低炭素濃度CZ-Si結晶中の低線量照射誘起複合体の赤外吸収2009
- Author(s)
  井上直久, 後藤安則, 杉山隆英, 河村裕一, 久保田嘉孝
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InGaAs/GaAsSbタイプII量子井戸を受光層に用いた低暗電流pinフォトダイオード"講演予稿第1分冊2009
- Author(s)
  三浦広平, 永井陽一, 稲田博史, 猪口康博, 坪倉光隆, 河村裕一
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP基板上のMBE成長InGaAs/GaAsSb歪補償タイプII多重量子井戸層の評価2009
- Author(s)
  米澤康弘, 河村裕一, 三浦広平, 猪口康博
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 「InP基板上のMBE成長GaAsSbの評価」講演予稿集第1分冊2009
- Author(s)
  平池龍馬, 三浦広平, 猪口正博, 河村裕一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 「InGaAsP/InAlAsP MQW層の評価」講演予稿集第1分冊2009
- Author(s)
  鹿山昌代, 河村裕一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP基板上のMBE成長InGaAs/GaAsSb歪補償タイプII多重量子井戸層の評価"講演予稿集第1分冊2009
- Author(s)
  米澤康弘, 河村裕一, 三浦広平, 猪口康博
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP基板上のMBE成長GaAsSbの評価2009
- Author(s)
  平池龍馬、三浦広平、猪口正博、河村裕一
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-17
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 「低炭素濃度Si結晶中の赤外吸収(6)」講演予稿集第1分冊2009
- Author(s)
  井上直久, 後藤康則, 杉山隆英, 河村裕一
- Organizer
  第70回応用物理学会学術講演会
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] SiC薄膜の赤外吸収2009
- Author(s)
  井上直久, 須田良幸, 山口雄一郎, 河村裕一, 久保田嘉孝
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP上にMBE成長した厚いInGaAsSbNの光学的評価"講演予稿集第1分冊2008
- Author(s)
  吉川真央, 三浦広平, 永井陽一, 猪口康博, 河村裕一
- Organizer
  第69会応用物理学会学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2008-09-05
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] 低炭素濃度CZ-Si結晶中の低線量照射複合体の赤外吸収"講演予稿集第1分冊2008
- Author(s)
  井上直久, 後藤康則, 杉山隆英, 河村裕一
- Organizer
  第69会応用物理学会学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2008-09-05
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP基板上のGaAsSbとInGaAs/GaAsSbタイプII量子井戸のtem観察"講演予稿集第1分冊2008
- Author(s)
  河村裕一, 三浦広平, 坪倉光隆, 岡田浩
- Organizer
  第69会応用物理学会学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] InP基板上のInGaAsN/GaAsSbタイプII量子井戸ダイオードの発光特性"講演予稿集第1分冊2008
- Author(s)
  河村裕一, 井上直久
- Organizer
  第68会応用物理学会学術講演会
- Place of Presentation
  北海道
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] MBE growth of thick InGaAsN layerslattice-matched to InP substrates2007
- Author(s)
  K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura
- Organizer
  The 19^<th> International Conference on InP and related materials
- Place of Presentation
  松江市
- Year and Date
  2007-05-17
- Data Source
  KAKENHI-PROJECT-19560016
[Presentation] BSCCO単結晶によるｄドットの作製と磁束分布観測
- Author(s)
  川又修一、河村裕一、元持祐輝、加藤勝、石田武和
- Organizer
  東北大学金属材料研究所共同利用研究会「ナノ構造超伝導体の磁束構造」
- Place of Presentation
  東北大学　金属材料研究所 (宮城県)
- Invited
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] InP基板上のInAsSbN単一量子井戸ﾀﾞｲｵｰﾄﾞのＥＬ特性
- Author(s)
  水田省吾、河村裕一
- Organizer
  応用物理学会学術講演会（2014春）
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] InP基板上InAsSbN単一量子井戸のＰＬ温度特性
- Author(s)
  水田省吾、正野琢也、河村裕一
- Organizer
  第５９回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] BSCCO単結晶ｄドットの作製と磁束分布観測
- Author(s)
  川又修一, 元持祐輝, 瀬川将弘, 二神敦, 河村裕一, 加藤勝, 石田武和
- Organizer
  東北大学金属材料研究所共同利用研究会「超伝導ナノ構造の転移温度上昇と磁束構造」
- Place of Presentation
  東北大学　金属材料研究所 (宮城県)
- Invited
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] 歪補償InGaAs/GaAsSbタイプII多重量子井戸への成長シーケンスの影響
- Author(s)
  三浦広平、猪口康博、日比野暁、河村裕一
- Organizer
  第５９回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] InP基板上のInGaAsN/GaAsSb Type II ﾀﾞｲｵｰﾄﾞのＥＬ特性
- Author(s)
  佐橋徹、河村裕一
- Organizer
  応用物理学会学術講演会（2013秋）
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] Fabrication and Magnetic Flux Distribution of BSCCO d-dot Embedded in Pb
- Author(s)
  S. Kawamata, Y. Kawamura, M. Kato, T. Ishida
- Organizer
  International Symposium on Frontiers in Materials Science (ISFMS 2013)
- Place of Presentation
  Hanoi, Vietnam
- Data Source
  KAKENHI-PROJECT-23540422
[Presentation] ＭＢＥ成長InGaAsN/AlAsSb共鳴トンネルダイオードの特性評価
- Author(s)
  光吉謙太、河村裕一
- Organizer
  第７２回応用物理学会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] Type II InAs/GaSb superlattice grown on InP
- Author(s)
  K. Miura, Y. Iguchi and Y. Kawamura
- Organizer
  The 17^<th> International Conference of Molecuar Beam Epitaxy ThA-2-3
- Data Source
  KAKENHI-PROJECT-23560012
[Presentation] 歪補償InGaAs/GaAsSbタイプII多重量子井戸層の特性
- Author(s)
  平池龍馬、三浦広平、猪口康博、河村裕一
- Organizer
  第７２回応用物理学会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23560012

1. INOUE Naohisa (60275287)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. TOYOTA Naoki (50124607)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. KAWAMATA Shuichi (50211868)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
4. KATO Masaru (90204495)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
5. ISHIDA Takekazu (00159732)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
6. MATSUI Hiroshi (30275292)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. MORIMORO Keizo (50100219)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 落合明 (90183772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. ANDREI Lebed (10281990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SUGIURA Hideo

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KAWAMURA Yuichi 河村 裕一

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Fabrication of mid- infrared devices with nwe nano-structurePrincipal Investigator

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Fabrication of d-dot by using high temperature oxide superconductor BSCCO single crystal and creation of logic circuit

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studies of mid-infrared devices using new materials and structuresPrincipal Investigator

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Study of InAsSbN/GaAsSbN new type quantum structure device in the infra-red wavelength region.Principal Investigator

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Research of new functional photonic devices using asymmetric type II quantum well structure.Principal Investigator

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Microwave Absorption in Low-Carrier Density and Strongly Correlated Electron Systems at Low Temperature under High Magnetic Field

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Study of short-wavelength intersubband luminescence in nitride semiconductors

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タイプII量子井戸構造を用いた低温度依存性長波長帯レーザの研究Principal Investigator

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[Book] 光技術動向調査報告書2007

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[Journal Article] Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates2017

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[Journal Article] Effective Mass of Two-dimensional Electrons in InGaAsN/GaAsSb Type II Quantum Well by Shubnikov-de Haas Oscillations2016

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[Journal Article] 半導体結晶と光素子への応用2015

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[Journal Article] 2.86mm room-temperature light emission of InGaAsN.GaAsSb type II quantum well diodes grown on InP substrates2014

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[Journal Article] Type II InAs?GaSb superlattice grown on InP substrate2013

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[Journal Article] The growth of high quarity GaAsSb and Type II InGaAs/GaAsSb superlattice structure2013

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KAWAMURA Yuichi 河村裕一