NAKAJIMA Kazuo 中嶋一雄

Researcher Number	80311554
Affiliation (based on the past Project Information) *help	2012: 京都大学, エネルギー科学研究科, 教授 2010: Tohoku University, エネルギー科学研究科, 客員教授 2008 – 2009: Tohoku University, 金属材料研究所, 教授 1999 – 2006: 東北大学, 金属材料研究所, 教授 2002: 東北大, 金属材料研究所, 教授 2000: 東北大学, 金属材料研究所, 助教授
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Applied optics/Quantum optical engineering Except Principal Investigator Science and Engineering / Electronic materials/Electric materials / Physical properties of metals / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / 固体物性Ⅰ(光物性・半導体・誘電体)
Keywords	Principal Investigator SiGe / 太陽電池 / InGaAsN / 結晶欠陥 / シリコン / resonant tunneling / strained Si / floating zone growth / multicomponent zone-melting method / multicomponent bulk crystal … More / ヘテロ構造 / 歪み / 優先成長方位 / フローティングゾーン成長法 / 分子線エピタキシー / 逆格子空間マッピング / 共鳴トンネル / 歪みシリコン / フローティングゾーン成長 / 溶質元素補給成長法 / バルク結晶 / シリコンゲルマニウム / in-situ monitoring / alloy semiconductor / multicomponet zone-melting method / 基板 / 単結晶 / 成長界面 / In-Ga-As / 均一組成 / 多元系バルク結晶 / その場観察 / 多元系半導体バルク結晶 / 溶質元素補給ゾーン成長法 / ファセット成長 / デンドライト結晶 / せん断応力 / ランダム粒界 / 亜粒界 / Siバルク多結晶 / 浮遊キャスト法 / 浮遊キャスト成長 / 多結晶 / 結晶成長 / X線回折 / 塑性変形 / 結晶レンズ / X線用レンズ / 半導体結晶 / 高温加圧加工 / 結晶粒径 / 成長速度 / 潜熱 / 過冷度 / 融液成長 … More Except Principal Investigator シリコンゲルマニウム / 結晶成長 / Two-dimensional hole gas / Modulation doping / Strain-controlled thin film / Multicomponent Zone-melting Method / Molecular Beam Epitaxy / Silicon Germanium / 二次元正孔ガス / 変調ドーピング構造 / 歪み制御薄膜 / 溶質元素補給ゾーン成長法 / 分子線エピタキシー法 / image data processing / Maximum entropy method / X-ray diffraction / Mapping of X-ray fluorescence / X-ray micronanalyzer / Bent graphite monochoromator / マキシマムエンドロピー法 / 蛍光X線 / グラファイト集光素子 / 画像処理 / マキシマムエントロピー法 / X線回折 / 蛍光X線マッピング / X線マイクロアナライザ / 湾曲グラファイト / indirect semiconductor / electron localization / charged exciton / modulation doping / semiconductor quantum well / semiconductor quantum dot / microscopic photoluminescence / 励起子分子 / 局在励起子 / フォトルミネッセンス / 間接遷移型半導体 / 電子局在 / 帯電励起子 / 変調ドーピング / 半導体量子井戸 / 半導体量子ドット / 顕微フォトルミネッセンス / 炭素不純物 / 多結晶 / シリコン / バルク / 結晶欠陥 / 太陽電池 / 不純物 / 多結晶シリコン / フィードバック制御 / その場観察 / 溶質元素補給ゾーン成長 / カーボンナノチューブ / フラーレン / X線回折法 / 硫化物 / 亜鉛酸化物 / 半導体 / 光触媒物質 / 蛍光X線ホログラム / X線異常散乱 / XANES / 元素選択性 / 局在量子構造 / 局所格子歪み / 部分硫化 / 光触媒 / 局所構造評価 / 薄膜 / 放射光 / 蛍光X線ホログラフィー / 光触媒材料 / チタン酸化物 / 構造解析 / 核形成 / 凝集 / リゾチーム / 吸着 / 電気化学原子間力顕微鏡 / 等電点 / タンパク質 Less

Study of carbon impurities in bulk multicrystalline silicon
- Principal Investigator
  
  KUTSUKAKE Kentaro
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Investigation of crystal growth mechanisms of Si crystals floating on Si melt and development of crystal growth technique to realize high-quality Si multicrystalsPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Kazuo
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
ゲルマニウム結晶ウェハーの高温加圧加工によるX線用モノクロメーター結晶の研究Principal Investigator
- Principal Investigator
  
  中嶋一雄
- Project Period (FY)
  2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Tohoku University
高温加圧法によるシリコン結晶ウェハーの変形加工と形状制御限界の研究Principal Investigator
- Principal Investigator
  
  中嶋一雄
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Growth of SiGe bulk single crystals with low defect density and creation of functional heterostructuresPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Kazuo
- Project Period (FY)
  2002 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
シリコン系混晶半導体のグローバル成長制御
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
過冷炉度を制御した融液成長法による太陽電池用Si多結晶の大粒径化と高効率化Principal Investigator
- Principal Investigator
  
  中嶋一雄
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Research on functional electronic devices based on straind-Si on SiGe alloy substrates
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
回折および分光手法による酸化物表面での局在量子構造解析
- Principal Investigator
  
  MATSUBARA Eiichiro (松原一郎)
- Project Period (FY)
  2000 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Development of Hamos-type X-ray micro-analyzer using a cylindrically, bent graphite monochromator
- Principal Investigator
  
  MATSUBARA Eiichiro
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  Tohoku University
タンパク質分子の等電点の新測定法と電極界面凝集化過程のその場観察
- Principal Investigator
  
  MIYASHITA Satoru
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Tohoku University
Development of multicomponent bulk single crystal with uniform composition by the multicomponent zone-melting methodPrincipal Investigator
- Principal Investigator
  
  NAKAJIMA Kazuo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Research on spatially and temporally resolved spectroscopy of semiconductor quantum structures by using ulta small probe light
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
  The University of Tokyo

All 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 Other

All Journal Article Presentation Book Patent

[Book] 太陽電池の物理2010
- Author(s)
  ペーターヴュルフェル著, 宇佐美徳隆、石原照也、中嶋一雄監訳
- Publisher
  丸善(5月出版予定)
- Data Source
  KAKENHI-PROJECT-20226001
[Book] 太陽電池の物理2010
- Author(s)
  ペーターヴュルフェル著, 宇佐美徳隆、石原照也、中嶋一雄監訳
- Publisher
  丸善
- Data Source
  KAKENHI-PROJECT-20226001
[Book] Fundamental understanding of subgrain boundaries(Advances in Materials Research 14)(Crystal Growth of Si for Solar Cells, edited by K.Nakajima, and N.Usami)(chap.6)2009
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, K.Nakajima
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-20226001
[Book] Mechanism of Dendrite Crystal(Advances in Materials Research 14)(Crystal Growth of Si for Solar Cells, edited by K.Nakajima, and N.Usami)(chap.5)2009
- Author(s)
  K.Fujiwara, K.Nakajima
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during2012
- Author(s)
  Kentaro Kutsukake, Hideaki Ise, Yuki Tokumoto, Yutaka Ohno, Kazuo Nakajima, and Ichiro Yonenaga
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 352 Issue: 1 Pages: 173-176
- DOI
  10.1016/j.jcrysgro.2012.02.004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760004
[Journal Article] Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities2011
- Author(s)
  I.Takahashi, N.Usami, H.Mizuseki, Y.Kawazoe, G.Stokkan, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells2011
- Author(s)
  N.Usami, I.Takahashi, K.Kutsukake, K.Fujiwara, K.Nakajima
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells2011
- Author(s)
  N.Usami, I.Takahashi, K.Kutsukake, K.Fujiwara, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Impact of type of crystal defects in multicrystalline Si on electrical prope and interaction with impurities2011
- Author(s)
  I.Takahashi, N.Usami, H.Mizuseki, Y.Kawazoe, G.Stokkan, K.Nakajima
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Pattern formation mechanism of a periodically faceted interface during crystallization of Si2010
- Author(s)
  M.Tokairin, K.Fujiwara, K.Kutsukake, H.Kodama, N.Usami, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 3670-3674
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed2010
- Author(s)
  I.Takahashi, N.Usami, K.Kutsukake, G.Stokkan, K.Morishita, K.Nakajima
- Journal Title
  
  J.Crystal Growth 312
  
  Pages: 897-901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] A computational investigation of relationship between shear stress and multicrystalline structure in silicon2010
- Author(s)
  I.Takahashi, 宇佐美徳隆, 沓掛健太朗, K.Morishita, 中嶋一雄
- Journal Title
  
  Jpn.J.Appl.Phys. (未定, 印刷中)
- NAID
  210000068399
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Growth mechanism of the Si <110> faceted dendrite2010
- Author(s)
  K.Fujiwara, H.Fukuda, N.Usami, K.Nakajima, S.Uda
- Journal Title
  
  Phys.Rev.B 81
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Pattern formation mechanism of a periodically faceted interface during crystallization of Si2010
- Author(s)
  M.Tokairin, K.Fujiwara, K.Kutsukake, H.Kodama, N.Usami, K.Nakajima
- Journal Title
  
  J.Crystal Growth
  
  Volume: 312 Pages: 3670-3674
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] A computational investigation of relationship between shear stress and multicrystalline structure in silicon2010
- Author(s)
  I.Takahashi, N.Usami, K.Kutsukake, K.Morishita, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- NAID
  210000068399
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth2010
- Author(s)
  宇佐美徳隆, R.Yokoyama, I.Takahashi, 沓掛健太朗, 藤原航三, 中嶋一雄
- Journal Title
  
  J.Appl.Phys. 107
  
  Pages: 13511-13511
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Growth mechanism of the Si <110> faceted dendrite2010
- Author(s)
  K.Fujiwara, H.Fukuda, N.Usami, K.Nakajima, S.Uda
- Journal Title
  
  Physical Review B
  
  Volume: 81
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth2010
- Author(s)
  N.Usami, R.Yokoyama, I.Takahashi, K.Kutsukake, K.Fujiwara, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed2010
- Author(s)
  I.Takahashi, 宇佐美徳隆, 沓掛健太朗, G.Stokkan, K.Morishita, 中嶋一雄
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 897-901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Microstructures of Si multicrystals and their impact on minority carrier diffusion length2009
- Author(s)
  H.Y.Wang, N.Usami, K.Fujiwara, K.Kutsukake, K.Nakajima
- Journal Title
  
  Acta Materialia 57
  
  Pages: 3268-3276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Floating cast method to realize high-quality Si bulk multicrystals for solar cells2009
- Author(s)
  Y.Nose, I.Takahashi, W.Pan, N.Usami, K.Fujiwara, K.Nakajima
- Journal Title
  
  J.Crystal Growth 311
  
  Pages: 228-231
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Growth behavior of faceted Si crystals at grain boundary formation2009
- Author(s)
  藤原航三, S.Tsumura, M.Tokairin, 沓掛健太朗, 宇佐美徳隆, S.Uda, 中嶋一雄
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Quantitative analysis of sub-grain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance2009
- Author(s)
  K.Kutsukake, N.Usami, T.Ohtaniuchi, K.Fujiwara, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Formation mechanism of the faceted interface: in-situ observation of the Si (100) crystal-melt interface during crystallization2009
- Author(s)
  M.Tokairin, K.Fujiwara, K.Kutsukake, N.Usami, K.Nakajima
- Journal Title
  
  Phys.Rev.B. 80
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article]2009
- Author(s)
  沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄
- Journal Title
  
  Cap.6 Fundamental understanding of subgrain boundaries, in"Crystal Growth of Si for Solar Cells"(edited by K. Nakajima, and N. Usami)(Springer)
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Quantitative analysis of sub-grain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance2009
- Author(s)
  K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara, and K. Nakajima
- Journal Title
  
  J. Appl. Phys 105
  
  Pages: 44909-44909
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] 太陽電池用多結晶シリコン中の亜粒界についての基礎研究2009
- Author(s)
  沓掛健太朗、宇佐美徳隆、藤原航三、中嶋一雄
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 13-20
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article]2009
- Author(s)
  藤原航三, 中嶋一雄
- Journal Title
  
  Cap.5 Mechanism of Dendrite Crystals, in"Crystal Growth of Si for Solar Cells"(edited by K. Nakajima, and N. Usami)(Springer)
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] 太陽電池用高品質シリコンバルク多結晶の製造技術2009
- Author(s)
  宇佐美徳隆、藤原航三、沓掛健太朗、中嶋一雄
- Journal Title
  
  電子材料 48
  
  Pages: 10-16
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Microstructures of Si multicrystals and their impact on minority carrier diffusion length2009
- Author(s)
  H.Y.Wang, 宇佐美徳隆, 藤原航三, 沓掛健太朗, 中嶋一雄
- Journal Title
  
  Acta Materialia 57
  
  Pages: 3268-3276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Growth Behavior of Faceted Si Crystals at Grain Boundary Formation2009
- Author(s)
  K.Fujiwara, S.Tsumura, M.Tokairin, K.Kutsukake, N.Usami, S.Uda, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Formation mechanism of the faceted interface : in-situ observation of the Si(100)crystal-melt interface during crystallization2009
- Author(s)
  M.Tokairin, 藤原航三, 沓掛健太朗, 宇佐美徳隆, 中嶋一雄
- Journal Title
  
  Phys.Rev.B 80
  
  Pages: 174108-174108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Impact of detect density in Si bulk multicrystals on gettering effect of impurities2008
- Author(s)
  I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutsukake, K. Fujiwara, and K. Nakajima
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 8790-8792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals2008
- Author(s)
  N.Usami, K.Kutsukake, K.Fujiwara, I.Yonenaga, K.Nakajima
- Journal Title
  
  Appl.Phys.Express 1
- NAID
  10025081680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Growth mechanism of Si-faceted dendrites2008
- Author(s)
  K. Fujiwara, K. Maeda, N. Usami, K. Nakajima
- Journal Title
  
  Phys. Rev. Lett 101
  
  Pages: 55503-55503
- NAID
  40019490875
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Impact of defect density in Si bulk multicrystals on gettering effect of impurities2008
- Author(s)
  I.Takahashi, N.Usami, R.Yokoyama, Y.Nose, K.Kutsukake, K.Fujiwara, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 47
  
  Pages: 8790-8792
- NAID
  40016389603
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals2008
- Author(s)
  N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga, and K. Nakajima
- Journal Title
  
  Appl. Phys. Express 1
  
  Pages: 75001-75001
- NAID
  10025081680
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Siバルク多結晶の組織制御による太陽電池の高効率化2008
- Author(s)
  宇佐美徳隆、藤原航三、沓掛健太朗、中嶋一雄
- Journal Title
  
  電子情報通信学会技術研究報告 108
  
  Pages: 73-76
- NAID
  110006792719
- Data Source
  KAKENHI-PROJECT-20226001
[Journal Article] Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer2007
- Author(s)
  N.Usami, K.Kutsukake, K.Nakajima, S.Amtabilian et al.
- Journal Title
  
  Appl. Phys. Lett. 90
- NAID
  120002337940
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of structural imperfection of Σ5 grain boundaries in bulk multicrystalline Si on their electrical activities2007
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, Y.Nose, K.Nakajima
- Journal Title
  
  J. Appl. Phys. 101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells2007
- Author(s)
  N.Usami, W.Pan, K.Fujiwara, M.Tayanagi, K.Ohdaira, K.Nakajima
- Journal Title
  
  Solar Energy Mat.and Solar Cells 91
  
  Pages: 123-128
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Application of Czochralski-grown Si-rich SiGe bulk crystal as a substrate for luminescent strain-controlled quantum wells2007
- Author(s)
  N.Usami, R.Nihei, I.Yonenaga, Y.Nose, K.Nakajima
- Journal Title
  
  Applied Physics Letters (in press)
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of structural imperfection of Σ5 grain boundaries in bulk multicrystalline Si on their electrical activities2007
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, Y.Nose, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Structure and its influence on electrical activity of a near {310} Σ5 grain boundary in bulk silicon2007
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, Y.Nose, K.Nakajima
- Journal Title
  
  Materials Transaction. 48
  
  Pages: 143-147
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Application of Czochralski-grown Si-rich SiGe bulk crystal as a substrate for luminescent quantum wells2007
- Author(s)
  N.Usami, R.Nihei, I.Yonenaga, Y.Nose, K.Nakajima
- Journal Title
  
  Appl. Phys. Lett. 90
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution2007
- Author(s)
  M.Tayanagi, N.Usami, W.Pan, K.Ohdaira, K.Fujiwara, Y.Nose, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer2007
- Author(s)
  N.Usami, K.Kutsukake, K.Nakajima, S.Amtabilian, A.Fave, M.Lemiti
- Journal Title
  
  Appl.Phys.Lett. 90
- NAID
  120002337940
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Application of Czochralski-grown Si-rich SiGe bulk crystal as a substrate for luminescent quantum wells2007
- Author(s)
  N.Usami, R.Nihei, I.Yonenaga, Y.Nose, K.Nakajima
- Journal Title
  
  Appl.Phys.Lett. 90
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration2006
- Author(s)
  N.Usami, K.Kutsukake, T.Sugawara, K.Fujiwara, W.Pan, Y.Nose, T.Shishido, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 45
  
  Pages: 1734-1737
- NAID
  40007177936
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of Structure-Controlled Polycrystalline Silicon Ingot for Solar Cells by Casting2006
- Author(s)
  K.Fujiwara, W.Pan, N.Usami, K.Sawada, M.Tokairin, Y.Nose, A.Nomura, T.Shishido, K.Nakajima
- Journal Title
  
  Acta Materialia 54
  
  Pages: 3191-3197
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate2006
- Author(s)
  N.Usami, Y.Nose, K.Fujiwara, K.Nakajima
- Journal Title
  
  Appl. Phys. Lett. 88
- NAID
  120001858007
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Si wafers having one-and two- dimensionally curved (111) planes examined by X-ray diffraction2006
- Author(s)
  H.Okuda, K.Nakajima, K.Fujiwara, S.Ochiai
- Journal Title
  
  J. Appl. Cryst 39
  
  Pages: 443-445
- Data Source
  KAKENHI-PROJECT-18656017
[Journal Article] Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate2006
- Author(s)
  N.Usami, Y.Nose, K.Fujiwara, K.Nakajima
- Journal Title
  
  Appl.Phys.Lett. 88
- NAID
  120001858007
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Directional growth method to obtain high quality polycrystalline silicon from its melt2006
- Author(s)
  K.Fujiwara, W.Pan, K.Sawada, M.Tokairin, N.Usami, Y.Nose, A.Nomura, T.Shishido, K.Nakajima
- Journal Title
  
  J.Crystal Growth 292
  
  Pages: 282-285
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Intermixing of Ge and Si during exposure of GeH_4 on Si2006
- Author(s)
  G.Watari, N.Usami, Y.Nose, K.Fujiwara, G.Sazaki, K.Nakajima
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 163-165
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of Stacked Ge islands on the Dark Current-Voltage Characteristics and Conversion Efficiency of the Solar Cells2006
- Author(s)
  A.Alguno, N.Usami, K.Ohdaira, W.Pan, M.Tayanagi, K.Nakajima
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 402-405
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Solar cell system using a polished concave Si-crystal mirror2005
- Author(s)
  K.Nakajima et al.
- Journal Title
  
  Solar Energy Materials & Solar Cells Vol.88
  
  Pages: 323-329
- Data Source
  KAKENHI-PROJECT-17656002
[Journal Article] Influence of growth temperature on minority carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent2005
- Author(s)
  Y.Satoh, N.Usami, W.Pan, K.Fujiwara, T.Ujihara, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution and their applications for high efficiency solar cells2005
- Author(s)
  K.Nakajima et al.
- Journal Title
  
  Journal of Crystal Growth 275
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Analysis of the Dark-current Density in Solar Cells Based on Multicrystalline SiGe2005
- Author(s)
  K.Ohdaira, N.Usami, W.Pan, K.Fujiwara, K.Nakajima
- Journal Title
  
  Jpn. J. Appl. Phys. 44
  
  Pages: 8019-8022
- NAID
  10016871374
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams2005
- Author(s)
  K.Nakajima, Y.Azuma, N.Usami, G.Sazaki, T.Ujihara, K.Fujiwara et al.
- Journal Title
  
  INTERNATIONAL JOURNAL OF MATERIALS ＆ PRODUCT TECHNOLOGY 22
  
  Pages: 185-212
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams2005
- Author(s)
  K.Nakajima, Y.Azuma, N.Usami, G.Sazaki, T.Ujihara, K.Fujiwara, T.Shishido, Y.Nishijima, T.Kusunoki
- Journal Title
  
  INTERNATIONAL JOURNAL OF MATERIALS ＆ PRODUCT TECHNOLOGY 22
  
  Pages: 185-212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution and their applications for high efficiency solar cells2005
- Author(s)
  K.Nakajima, K.Fujiwara, W.Pan, N.Usami, T.Shishido
- Journal Title
  
  J.Crystal Growth 275
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution2005
- Author(s)
  N.Usami, K.Fujiwara, W.Pan, K.Nakajima
- Journal Title
  
  Jpn. J. Appl. Phys. 44
  
  Pages: 857-860
- NAID
  10014418496
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Structural properties of directionally grown polycrystalline SiGe for solar cells2005
- Author(s)
  K.Fujiwara, W.Pan, N.Usami, K.Sawada, A.Nomura, T.Ujihara, T.Shishido, K.Nakajima
- Journal Title
  
  J.Crystal Growth 275
  
  Pages: 467-473
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams2005
- Author(s)
  K.Nakajima et al.
- Journal Title
  
  INTERNATIONAL JOURNAL OF MATERIALS & PRODUCT TECHNOLOGY 22
  
  Pages: 185-212
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] A modified zone growth method for an InGaAs single crystal2005
- Author(s)
  Y.Nishijima, H.Tezuka, K.Nakajima
- Journal Title
  
  J. Crystal Growth 280
  
  Pages: 364-371
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystalline of SiGe bulk crystal2005
- Author(s)
  Y.Azuma, N.Usami, K.Fujiwara, T.Ujihrara, K.Nakajima
- Journal Title
  
  J. Crystal Growth 276
  
  Pages: 393-400
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Liquid phase eptiaxial growth of Si layer on thin Si substrates from Si pure melts under near-equilibrium conditions2005
- Author(s)
  K.Nakajima, K.Fujiwara, Y.Nose, N.Usami
- Journal Title
  
  Jpn. J. Appl. Phys. 44
  
  Pages: 5092-5095
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] A modified zone growth method for an InGaAs single crystal2005
- Author(s)
  Y.Nishijima, H.Tezuka, K.Nakajima
- Journal Title
  
  J.Crystal Growth 280
  
  Pages: 364-371
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition2005
- Author(s)
  N.Usami, M.Kitamura, K.Obara, Y.Nose, G.Sazaki, K.Fujiwara, T.Shishido, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 284
  
  Pages: 57-64
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Analysis of the Dark-current Density in Solar Cells Based on Multicrystalline SiGe2005
- Author(s)
  K.Ohdaira, N.Usami, W.Pan, K.Fujiwara, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 8019-8022
- NAID
  10016871374
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution and their applications for high efficiency solar cells2005
- Author(s)
  K.Nakajima et al.
- Journal Title
  
  J.Crystal Growth (印刷中)
- Data Source
  KAKENHI-PROJECT-12130201
[Journal Article] A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystalline of SiGe bulk crystal2005
- Author(s)
  Y.Azuma, N.Usami, K.Fujiwara, T.Ujihrara, K.Nakajima
- Journal Title
  
  J.Crystal Growth 276
  
  Pages: 393-400
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of growth temperature on minority carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent2005
- Author(s)
  Y.Satoh, N.Usami, W.Pan, K.Fujiwara, T.Ujihara, K.Nakajima
- Journal Title
  
  J. Appl. Phys. 98
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration2005
- Author(s)
  N.Usami, M.Kitamura, T.Sugawara, K.Kutsukake, K.Ohdaira, Y.Nose, K.Fujiwara, T.Shishido, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 44
- NAID
  10016590610
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique2005
- Author(s)
  M.Kitamura, N.Usami, T.Sugawara, K.Kutsukake, K.Fujiwara, Y.Nose, T.Shishido, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 280
  
  Pages: 419-424
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution and their applications for high efficiency solar cells2005
- Author(s)
  K.Nakajima, K.Fujiwara, W.Pan, N.Usami, T.Shishido
- Journal Title
  
  J. Crystal Growth 275
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained Si layer2005
- Author(s)
  N.Usami, K.Kutsukake, W.Pan, K.Fujiwara, T.Ujihara, B.Zhang, T.Yokoyama, K.Nakajima
- Journal Title
  
  J.Crystal Growth 275
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Hemisphere-Shaped Silicon Crystal Wafers Obtained by Plastic Deformation and Preparation of Their Solar Cells2005
- Author(s)
  K.Nakajima et al.
- Journal Title
  
  Journal of ELECTRONIC MATERIALS Vol.34・No7
  
  Pages: 1047-1052
- Data Source
  KAKENHI-PROJECT-17656002
[Journal Article] On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution2005
- Author(s)
  N.Usami, K.Fujiwara, W.Pan, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 857-860
- NAID
  10014418496
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Liquid phase eptiaxial growth of Si layer on thin Si substrates from Si pure melts under near-equilibrium conditions2005
- Author(s)
  K.Nakajima, K.Fujiwara, Y.Nose, N.Usami
- Journal Title
  
  Jpn.J.Appl.Phys. 44
  
  Pages: 5092-5095
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations2004
- Author(s)
  K.Nakajima, T.Ujihara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido
- Journal Title
  
  J. Crystal Growth 260
  
  Pages: 372-383
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositiona distribution2004
- Author(s)
  W.Pan, K.Fujiwara, N.Usami, T.Ujihara, K.Nakajima et al.
- Journal Title
  
  J. Appl. Phys. 96
  
  Pages: 1238-1241
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Grain growth behaviors of polycrystalline silicon during melt growth processes2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J. Crystal Growth 266
  
  Pages: 441-448
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Successful growth of an In_xGa_<1-x>As (x>0.18) single bulk crystal directly on a GaAs seed crystal with preferential orientation2004
- Author(s)
  Y.Azuma, Y.Nishijima, K.Nakajima, N.Usami, K.Fujiwara et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- NAID
  10013276997
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations2004
- Author(s)
  K.Nakajima, T.Ujihara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido
- Journal Title
  
  J.Crystal Growth 260
  
  Pages: 372-383
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Successful growth of an In_xGa_<1-x>As(x>0.18) single bulk crystal directly on a GaAs seed crystal with preferential orientation2004
- Author(s)
  Y.Azuma, Y.Nishijima, K.Nakajima, N.Usami, K.Fujiwara, T.Ujihrara
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  10013276997
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer2004
- Author(s)
  Alguno, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, K.Nakajima, K.Sawano, Y.Shiraki
- Journal Title
  
  Appl.Phys.Lett. 84
  
  Pages: 2802-2804
- NAID
  120002337903
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe2004
- Author(s)
  N.Usami, W.Pan, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- NAID
  10012039322
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of melt growth behavior of polycrystalline silicon2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J.Crystal Growth 262
  
  Pages: 124-129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Grain growth behaviors of polycrystalline silicon during melt growth processes2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J.Crystal Growth 266
  
  Pages: 441-448
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of melt growth behavior of polycrystalline silicon2004
- Author(s)
  K.Fujiwara, Y.Obinata, T.Ujihara, N.Usami, G.Sazaki, K.Nakajima
- Journal Title
  
  J. Crystal Growth 262
  
  Pages: 124-129
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime2004
- Author(s)
  N.Usami, A.Alguno, K.Sawano, T.Ujihara, K.Fujiwara, G.Sazaki, Y.Shiraki, K.Nakajima
- Journal Title
  
  Thin Sold Films 451/452
  
  Pages: 604-607
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution2004
- Author(s)
  W.Pan, K.Fujiwara, N.Usami, T.Ujihara, K.Nakajima, R.Shimokawa
- Journal Title
  
  J.Appl.Phys. 96
  
  Pages: 1238-1241
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate2004
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima, B.P.Zhang, Y.Segawa
- Journal Title
  
  Appl.Surf.Sci. 224
  
  Pages: 95-98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates2004
- Author(s)
  K.Kutsukake, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, K.Nakajima
- Journal Title
  
  Appl.Phys.Lett. 85
  
  Pages: 1335-1337
- NAID
  120002337905
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe2004
- Author(s)
  N.Usami, W.Pan, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  10012039322
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate by liquid phase epitaxy2004
- Author(s)
  T.Ujihara, K.Obara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido, K.Nakajima
- Journal Title
  
  J.Crystal Growth 266
  
  Pages: 467-474
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Stacked Ge islands for photovoltaic applications2003
- Author(s)
  N.Usami, A.Alguno, T.Ujihara, K.Fujiwara, G.Sazaki, K.Nakajima, K.Sawano, Y.Shiraki
- Journal Title
  
  Sci.Tech.Adv.Mat. 4
  
  Pages: 367-370
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature2003
- Author(s)
  T.Ujihara, K.Obara, N.Usami, K.Fujiwara, G.Sazaki, T.Shishido, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 42
- NAID
  10010781885
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in Si matrix2003
- Author(s)
  N.Usami, T.Ichitsubo, T.Ujihara, T.Takahashi, K.Fujiwara, G.Sazaki, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 94
  
  Pages: 916-920
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate2003
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, B.P.Zhang, Y.Segawa, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 42
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure2003
- Author(s)
  A.Alguno, N.Usami, T.Ujihara, K.Fujiwara, G.Sazaki, Y.Shiraki, K.Nakajima
- Journal Title
  
  Appl.Phys.Lett. 83
  
  Pages: 1258-1260
- NAID
  120002337899
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature2003
- Author(s)
  Y.Azuma, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 250
  
  Pages: 298-304
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] 3D atomic imaging of SiGe system by X-ray fluorescence holography2003
- Author(s)
  K.Hayashi, Y.Takahashi, E.Matsubara, K.Nakajima et al.
- Journal Title
  
  J. Materials Science : Materials in Electronics 14
  
  Pages: 459-462
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] 3D atomic imaging of SiGe system by X-ray fluorescence holography2003
- Author(s)
  K.Hayashi, Y.Takahashi, E.Matsubara, K.Nakajima, N.Usami
- Journal Title
  
  J.Materials Science : Materials in Electronics 14
  
  Pages: 459-462
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara, G.Sazaki, T.Shishido
- Journal Title
  
  Solar Energy Materials and Solar Cells 72
  
  Pages: 93-100
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J. Non-cryst. Solids 312
  
  Pages: 196-202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of the Marangoni convection of a NaC1 aqueous solution under microgravity2002
- Author(s)
  G.Sazaki, S.Miyashita, M.Nokura, T.Ujihara, N.Usami, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 234
  
  Pages: 516-522
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 242
  
  Pages: 313-320
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ observation of the Marangoni convection of a NaCl aqueous solution under microgravity2002
- Author(s)
  G.Sazaki, S.Miyashita, M.Nokura, T.Ujihara, N.Usami, K.Nakajima
- Journal Title
  
  J. Cryst. Growth 234
  
  Pages: 516-522
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In situ observation of crystal growth behavior of silicon melt2002
- Author(s)
  K.Fujiwara, Ke.Nakajima, T.Ujihara, N.Usami, G.Sazaki, H.Hasegawa, S.Mizoguchi, K.Nakajima
- Journal Title
  
  J.Cryst.Growth 243
  
  Pages: 275-282
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution2002
- Author(s)
  N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki, Y.Murakami, K.Nakajima
- Journal Title
  
  J.Appl.Phys. 92
  
  Pages: 7098-7101
- NAID
  120002338155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara et al.
- Journal Title
  
  Solar Energy Materials ＆ Solar Cell 73
  
  Pages: 305-320
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J. Crystal Growth 242
  
  Pages: 313-320
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution2002
- Author(s)
  N.Usami, T.Takahashi, K.Fujiwara, T.Ujihara, G.Sazaki, Y.Murakami, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 41
  
  Pages: 4462-4465
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J. Crystal Growth 241
  
  Pages: 387-394
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures2002
- Author(s)
  N.Usami, Y.Azuma, T.Ujihara, G.Sazaki, K.Fujiwara, Y.Murakami, K.Nakajima
- Journal Title
  
  Mat.Sci.Eng.B 89
  
  Pages: 364-367
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara, G.Sazaki, T.Shishido
- Journal Title
  
  Solar Energy Materials ＆ Solar Cell 73
  
  Pages: 305-320
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 241
  
  Pages: 387-394
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law2002
- Author(s)
  T.Ujihara, K.Fujiwara, G.Sazaki, N.Usami, K.Nakajima
- Journal Title
  
  J.Non-cryst.Solids 312
  
  Pages: 196-202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications2002
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, Y.Murakami, T.Ujihara et al.
- Journal Title
  
  Solar Energy Materials and Solar Cells 72
  
  Pages: 93-100
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution2002
- Author(s)
  N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, H.Yaguchi, Y.Murakami, K.Nakajima
- Journal Title
  
  Jpn.J.Appl.Phys. 41
- NAID
  110006344347
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals2002
- Author(s)
  K.Nakajima, T.Kusunoki, Y.Azuma, N.Usami, K.Fujiwara et al.
- Journal Title
  
  J. Crystal Growth 240
  
  Pages: 373-381
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In-situ monitoring system of the position and temperature at the crystal-solution interface2002
- Author(s)
  G.Sazaki, Y.Azuma, S.Miyashita, N.Usami, T.Ujihara, K.Fujiwara, Y.Murakami, K.Nakajima
- Journal Title
  
  J.Crystal Growth 236
  
  Pages: 125-131
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] In situ observation of crystal growth behavior of silicon melt2002
- Author(s)
  K.Fujiwara, Ke.Nakajima, T.Ujihara, N.Usami, G.Sazaki et al.
- Journal Title
  
  J. Cryst. Growth 243
  
  Pages: 275-282
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Journal Article] Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals2002
- Author(s)
  K.Nakajima, T.Kusunoki, Y.Azuma, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, T.Shishido
- Journal Title
  
  J.Crystal Growth 240
  
  Pages: 373-381
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Patent] Siバルク多結晶インゴットの製造方法2010
- Inventor(s)
  宇佐美徳隆、中嶋一雄、高橋勲
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2008-108887
- Acquisition Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] Siバルク多結晶インゴットの製造方法2010
- Inventor(s)
  宇佐美徳隆、中嶋一雄、高橋勲
- Industrial Property Rights Holder
  東北大学
- Acquisition Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] 半導体バルク多結晶の製造方法2009
- Inventor(s)
  宇佐美徳隆、中嶋一雄、沓掛健太朗
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2009-120594
- Filing Date
  2009-05-19
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] 半導体バルク結晶の作製方法2009
- Inventor(s)
  中嶋一雄、藩伍根、野瀬嘉太郎
- Industrial Property Rights Holder
  東北大学
- Acquisition Date
  2009-04-17
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] Si多結晶インゴット、Si多結晶インゴットの製造方法およびSi多結晶ウェノハ2009
- Inventor(s)
  中嶋一雄、藤原航三、宇佐美徳隆
- Industrial Property Rights Holder
  東北大学
- Patent Publication Number
  2009-084145
- Filing Date
  2009-04-25
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] Si結晶インゴットの製造方法2009
- Inventor(s)
  中嶋一雄、宇佐美徳隆
- Industrial Property Rights Holder
  東北大学
- Patent Publication Number
  2009-173518
- Filing Date
  2009-08-06
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] Siバルク多結晶インゴットの製造方法2008
- Inventor(s)
  宇佐美徳隆、中嶋一雄、高橋勲
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2008-108887
- Filing Date
  2008-04-18
- Data Source
  KAKENHI-PROJECT-20226001
[Patent] 曲率分布結晶レンズの製造方法および偏光制御装置2006
- Inventor(s)
  奥田浩司, 中嶋一雄, 落合庄次郎
- Industrial Property Rights Holder
  京都大学, 東北大学
- Industrial Property Number
  2006-015686
- Filing Date
  2006-01-24
- Data Source
  KAKENHI-PROJECT-17656002
[Patent] X線反射率測定装置およびX線反射率測定方法2005
- Inventor(s)
  奥田浩司, 中嶋一雄, 落合庄次郎
- Industrial Property Rights Holder
  京都大学, 東北大学
- Industrial Property Number
  2005-368305
- Filing Date
  2005-12-21
- Data Source
  KAKENHI-PROJECT-17656002
[Patent] 太陽電池およびその製造2005
- Inventor(s)
  宇佐美徳隆, 中嶋一雄, 藤原航三
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2005-044025
- Filing Date
  2005-02-21
- Data Source
  KAKENHI-PROJECT-12130201
[Patent] 結晶成長方法、バルク単結晶成長用バルク于備結晶、及びバルク単結晶成長用バルク予備結晶の作製方法2003
- Inventor(s)
  中嶋一雄他
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2003-355443
- Filing Date
  2003-10-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Patent] Ge系結晶の成長方法、Ge系結晶、Ge系結晶基板及び太陽電池2003
- Inventor(s)
  中嶋一雄他
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2003-198417
- Filing Date
  2003-07-17
- Acquisition Date
  2006-09-22
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14102020
[Patent] Si結晶インゴットの製造方法
- Inventor(s)
  中嶋一雄、宇佐美徳隆
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2008-180842
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] A now mono-cast Si technique using functional grainth boundaies2012
- Author(s)
  Kentaro Kutsukake, Yutaka Ohono, Yuki Tokumoto, Noritaka Usami, Kazuo Nakajima and Ichiro Yonenaga
- Organizer
  The 6^<th> International workshop on Crystallline Silicon for Solar Cells (CSSC6)
- Place of Presentation
  Axi-les-Bans, France
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] A new mono-cast Si technique using functional grain boundaries2012
- Author(s)
  Kentaro Kutsukake, Yutaka Ohono, Yuki Tokumoto, Noritaka Usami, Kazuo Nakajima and Ichiro Yonenaga
- Organizer
  The 6th International workshop on Crystalline Silicon for Solar Cells (CSSC6)
- Place of Presentation
  Monterey, California, USA
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth2011
- Author(s)
  Kentaro Kutsukake, Hideaki Ise, Yuki Tokumoto, Yutaka Ohno, Kazuo Nakajima, Ichiro Yonenaga
- Organizer
  The 18th American Conference on Crystal Growth and Epitaxy (ACCG-18)
- Place of Presentation
  Monterey, Calfornia, USA
- Year and Date
  2011-08-01
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] 多結晶シリコン中の酸素・炭素不純物の結晶育成方向に対する分布の解析2011
- Author(s)
  沓掛健太朗、伊勢秀彰、大野裕、徳本有紀、森下浩平、中嶋一雄、米永一郎
- Organizer
  日本応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  東京
- Year and Date
  2011-12-06
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth2011
- Author(s)
  Kentaro Kutsukake, Hideaki Ise, Yuki Tokumoto, Yutaka Ohno, Kazuo Nakajima, Ichiro Yonenaga
- Organizer
  The 18th American Conference on Crystal Growth and Epitaxy (ACCG-18)
- Place of Presentation
  Monterey, California, USA
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] Study of incorporation of oxygen and carbon into multicrystalline silicon during ingot growth2011
- Author(s)
  Kentaro Kutsukake, Hideaki Ise, Yuki Tokumoto, Yutaka Ohno, Kazuo Nakajima, Ichiro Yonenaga
- Organizer
  21st International Photovoltaic Science and Engineering Conference (PVSEC-21)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2011-11-30
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] Modeling of incorporation of oxygen into multi-crystalline silicon during crystal growth2011
- Author(s)
  Kentaro Kutsukake, Hideaki Ise, Yuki Tokumoto, Yutaka Ohno, Kazuo Nakajima, Ichiro Yonenaga
- Organizer
  26th International Conference on Defects in Semiconductors (ICDS-26)
- Place of Presentation
  Nelson, New Zealand
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23760004
[Presentation] シリコンバルク多結晶の結晶成長過程における欠陥発生機構の解明2010
- Author(s)
  阿部匠朗, 沓掛健太朗, 藤原航三, 宇佐美徳隆, 中嶋一雄
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Formation mechanism of twin boundaries in silicon multicrystals during crystal growth2010
- Author(s)
  K.Kutsukake, T.Abe, N.Usami, K.Fujiwara, K.Morishita, K.Nakajima
- Organizer
  The 35^<th> IEEE Photovoltaic Specialists Conference
- Place of Presentation
  ハワイコンベンションセンター(ホノルル)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth mechanism of Si faceted dendrites and its application to the casting method for growing structure-controlled polycrystalline Si ingots2010
- Author(s)
  K.Fujiwara, K.Nakajima, K.Kutsukake, N.Usami, S.Uda
- Organizer
  16th International Conference on Crystal Growth
- Place of Presentation
  北京(中国)(招待講演)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth of high quality Si multicrystals by controlling their arrangement of dendrite crystals along the bottom of ingots and reducing the density of random grain boundaries2010
- Author(s)
  K.Nakajima
- Organizer
  The Future of Photovoltaics
- Place of Presentation
  東京ファッションタウンホール(東京)(招待講演)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Suppression of generation of dislocations in Si multicrystals by controlling coherency of grain boundaries at the initial stage of crystal growth2010
- Author(s)
  N.Usami, I.Takahashi, R.Yokoyama, K.Kutsukake, K.Fujiwara, K.Nakajima
- Organizer
  in The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC), The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5), Feria Valencia
- Place of Presentation
  Valencia, Spain
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Impact of coherency of grain boundaries in Si multicrystals on materials properties to affect solar cell performance2010
- Author(s)
  N.Usami, I.Takahashi, K.Kutsukake, K.Nakajima
- Organizer
  in the CSSC-4 Workshop(Invited Speaker)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Formation mechanism of twin boundaries in silicon multicrystals during crystal growth2010
- Author(s)
  K.Kutsukake, T.Abe, N.Usami, K.Fujiwara, K.Morishita, K.Nakajima
- Organizer
  in The 35th IEEE Photovoltaic Specialists Conference, Hawaii Convention Center, Honolulu, In Proceedings of The 35th IEEE Photovoltaic Specialists Conference(pp.810-811)(2010).
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 複合種結晶を用いた多結晶Siの成長と転位発生メカニズムの解明2010
- Author(s)
  高橋勲、宇佐美徳隆、沓掛健太朗、Gaute Stokkan、森下浩平、中嶋一雄
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Suppression of generation of dislocations in Si multicrystals by controlling coherency of grain boundaries at the initial stage of crystal growth2010
- Author(s)
  N.Usami, I.Takahashi, R.Yokoyama, K.Kutsukake, K.Fujiwara, K.Nakajima
- Organizer
  The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5)
- Place of Presentation
  バレンシア(スペイン)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] High efficiency solar cells obtained from small size ingots with 30cmφ by controlling the distribution and orientation of dendrite crystals grown along the bottom of the ingots2010
- Author(s)
  K.Nakajima, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
- Organizer
  in The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5) Feria Valencia
- Place of Presentation
  Valencia, Spain
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth mechanism of Si faceted dendrites and its application to the casting method for growing structure-controlled polycrystalline Si ingots2010
- Author(s)
  K.Fujiwara, K.Nakajima, K.Kutsukake, N.Usami, S.Uda
- Organizer
  in the 16th International Conference on Crystal Growth
- Place of Presentation
  Beijin, China
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] High efficiency solar cells obtained from small size ingots with 30cmφ by controlling the distribution and orientation of dendrite crystals using the dendritic casting method2010
- Author(s)
  K.Nakajima, K.Morishita, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
- Organizer
  in the CSSC-4 Workshop(Invited Speaker)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] High efficiency solar cells obtained from small size ingots with 30 cmφ by controlling the distribution and orientation of dendrite crystals using the dendritic casting method2010
- Author(s)
  K.Nakajima, K.Morishita, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
- Organizer
  CSSC-4 Workshop
- Place of Presentation
  台北(台湾)(招待講演)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] デンドライト利用キャスト成長法によるSi多結晶インゴットの組織と欠陥制御による高品質化2010
- Author(s)
  中嶋一雄、沓掛健太朗、宇佐美徳隆、藤原航三
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 材料科学からの結晶シリコン太陽電池の高効率化へのアプローチ2010
- Author(s)
  沓掛健太朗、宇佐美徳隆、藤原航三、森下浩平、中嶋一雄
- Organizer
  日本金属学会・日本鉄鋼協会東海支部学術討論会
- Place of Presentation
  名古屋大学(名古屋)
- Year and Date
  2010-02-23
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Impact of coherency of grain boundaries in Si multicrystals on materials properties to affect solar cell performance2010
- Author(s)
  N.Usami, I.Takahashi, K.Kutsukake, K.Nakajima
- Organizer
  CSSC-4 Workshop
- Place of Presentation
  台北(台湾)(招待講演)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] High efficiency solar cells obtained from small size ingots with 30 cmφ by controlling the distribution and orientation of dendrite crystals grown along the bottom of the ingots2010
- Author(s)
  K.Nakajima, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
- Organizer
  The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5)
- Place of Presentation
  バレンシア(スペイン)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth of high quality Si multicrystals by controlling their arrangement of dendrite crystals along the bottom of ingots and reducing the density of random grain boundaries2010
- Author(s)
  K.Nakajima
- Organizer
  in Nature Photonics Technology Conference "The Future of Photovoltaics", TFT hall(Invited Speaker)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] A computational investigation of relationship betwenn shear stress and multicrystal structure in Si2009
- Author(s)
  高橋勲, 宇佐美徳隆, R.Yokoyama, 沓掛健太朗, 藤原航三, 森下浩平, 中嶋一雄
- Organizer
  CSSC-3 Workshop
- Place of Presentation
  トロンハイム(ノルウェー)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] シリコンのファセットデンドライトの成長機構2009
- Author(s)
  藤原航三、前田健作、宇佐美徳隆、宇田聡、中嶋一雄
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] How can we decrease defect density in Si multicrystals to realize high-efficiency solar cells?2009
- Author(s)
  宇佐美徳隆, 沓掛健太朗, 高橋勲, R.Yokoyama, 藤原航三, 中嶋一雄
- Organizer
  24th European Photovoltaic Solar Energy Conference and Exhibition
- Place of Presentation
  ハンブルグ(ドイツ)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Control of microstructures and crystal defects in Si multicrystals grown by the casting method -how to improve the quality of multicrystals to the level of single crystals-2009
- Author(s)
  K.Nakajima, N.Usami, K.Fujiwara, K.Kutsukake
- Organizer
  in 24th European Photovoltaic Solar Energy Conference and Exhibition, CCH- Congress Center and International Fair Hamburg
- Place of Presentation
  Hamburg, Germany
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] A computational investigation of relationship between shear stress and multicrystal structure in Si2009
- Author(s)
  I.Takahashi, N.Usami, K.Kutsukake, K.Morishita, K.Nakajima
- Organizer
  in 2009 International Conference on Solid State Devices and Materials (SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] A computational investigation of relationship betwenn shear stress and multicrystal structure in Si2009
- Author(s)
  I.Takahashi, N.Usami, R.Yokoyama, K.Kutsukake, K.Fujiwara, K.Morishita, K.Nakajima
- Organizer
  in the CSSC-3 Workshop
- Place of Presentation
  Trondheim, Norway
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 結晶成長過程におけるシリコン多結晶の亜粒界発生メカニズム2009
- Author(s)
  宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
- Organizer
  電子情報通信学会
- Place of Presentation
  東北大学(仙台)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Role of crystal growth in challenges to high-efficiency solar cells2009
- Author(s)
  N.Usami, K.Fujiwara, K.Kutsukake, K.Nakajima
- Organizer
  in GCOE Singapore workshop (NTU-Tohoku U)
- Place of Presentation
  Singapore
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] In-situ observation of Si (100) crystal-melt interface2009
- Author(s)
  M.Tokairin, K.Fujiwara, K.Kutsukake, N.Usami, K.Nakajima
- Organizer
  in GCOE Singapore workshop (NTU-Tohoku U)
- Place of Presentation
  Singapore
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Improvement in quantitative analysis of defects and microstructures in Si multicrystals using X-ray diffraction2009
- Author(s)
  沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM2009)
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 結晶成長過程における多結晶組織形成メカニズムとその制御2009
- Author(s)
  宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Improvement in quantitative analysis of defects and microstructures in Si multicrystals using X-ray diffraction2009
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, K.Nakajima
- Organizer
  in 2009 International Conference on Solid State Devices and Materials (SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth of high-quality Si multicrystals using dendritic casting method and mechanism to obtain high-quality crystals with low defects2009
- Author(s)
  中嶋一雄, 藤原航三, 沓掛健太朗, 宇佐美徳隆
- Organizer
  CSSC-3 Workshop
- Place of Presentation
  トロンハイム(ノルウェー)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth of high-quality Si multicrystals using dendritic casting method and mechanism to obtain high-quality crystals with low defects2009
- Author(s)
  K.Nakajima, K.Fujiwara, K.Kutsukake, N.Usami
- Organizer
  in the CSSC-3 Workshop
- Place of Presentation
  Trondheim, Norway
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Comprehensive study of defects in Si Multicrystals Toward High-Efficiency Solar Cells2009
- Author(s)
  K. Kutsukake, N, Usami, K. Fujiwara, and K. Nakajima
- Organizer
  18^<th> International photovoltaic science and engineering conference and exhibition
- Place of Presentation
  Kolkota(India)
- Year and Date
  2009-01-21
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] How can we decrease defect density in Si multicrystals to realize high-efficiency solar cells?2009
- Author(s)
  N.Usami, K.Kutsukake, I.Takahashi, R.Yokoyama, K.Fujiwara, K.Nakajima
- Organizer
  in 24th European Photovoltaic Solar Energy Conference and Exhibition, CCH- Congress Center and International Fair
- Place of Presentation
  Hamburg,Germany
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Control of microstructures and crystal defects in Si multicrystals grown by the casting method -how to improve the quality of multicrystals to the level of single crystals-2009
- Author(s)
  中嶋一雄, 宇佐美徳隆, 藤原航三, 沓掛健太朗
- Organizer
  24th European Photovoltaic Solar Energy Conference and Exhibition
- Place of Presentation
  ハンブルグ(ドイツ)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 結晶シリコン太陽電池の高効率化に対する結晶成長からのアプローチ2009
- Author(s)
  宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
- Organizer
  広域産学官交流ネットワーク
- Place of Presentation
  メルパルク長野(長野)
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Comprehensive study of defects in Si Multicrystals Toward High-Efficiency Solar Cells2009
- Author(s)
  K.Kutsukake, N, Usami, K.Fujiwara, K.Nakajima
- Organizer
  in PVSEC18
- Place of Presentation
  Kolkata, India
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] A computational investigation of relationship between shear stress and multicrystal structure in Si2009
- Author(s)
  高橋勲, 宇佐美徳隆, 沓掛健太朗, 森下浩平, 中嶋一雄
- Organizer
  2009 International Conference on Solid State Devices and Materials(SSDM2009)
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 結晶成長過程におけるシリコン多結晶の欠陥発生メカニズム2009
- Author(s)
  宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
- Organizer
  結晶加工と評価技術第145委員会第118回研究会
- Place of Presentation
  九州大学(福岡)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Quantitative Analysis of Defects and Microstructures in Si Multicrystals Using X-ray Diffraction2009
- Author(s)
  沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄
- Organizer
  19th International Photovoltaic Science and Engineering Conference and Exhibition(PVSEC19)
- Place of Presentation
  済州(韓国)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 太陽電池用バルク多結晶シリコンの結晶成長過程における欠陥発生2009
- Author(s)
  沓掛健太朗、高橋勲、宇佐美徳隆、藤原航三、中嶋一雄
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(名古屋)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Analysis of microstructures in Si multicrystals and their impact on electrical properties2009
- Author(s)
  宇佐美徳隆, H.Y.Wang, 藤原航三, 沓掛健太朗, 中嶋一雄
- Organizer
  CSSC-3 Workshop
- Place of Presentation
  トロンハイム(ノルウェー)
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Quantitative Analysis of Defects and Microstructures in Si Multicrystals Using X-ray Diffraction2009
- Author(s)
  K.Kutsukake, N.Usami, K.Fujiwara, K.Nakajima
- Organizer
  in 19th International Photovoltaic Science and Engineering Conference and Exhibition (PVSEC19)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Analysis of microstructures in Si multicrystals and their impact on electrical properties2009
- Author(s)
  N.Usami, H.Y.Wang, K.Fujiwara, K.Kutsukake, K, Nakajima
- Organizer
  in the CSSC-3 Workshop
- Place of Presentation
  Trondheim, Norway
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Comprehensive study of sub-grain boundaries in Si multicrystals toward defect engineering for high-efficiency solar cell2008
- Author(s)
  N. Usami, K. Kutsukake, K. Fujiwara, and K. Nakajima
- Organizer
  5th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona(USA)
- Year and Date
  2008-11-12
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Challenges toward high-efficiency solar cells2008
- Author(s)
  N. Usami, K. Fujiwara, K. Kutsukake, and K. Nakajima
- Organizer
  Tech Horizon 2008
- Place of Presentation
  Riverside(USA)
- Year and Date
  2008-05-06
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] 結晶Si太陽電池の高効率化へ向けたSiバルク多結晶中亜粒界の総合研究2008
- Author(s)
  沓掛健太朗, 大谷内毅, 宇佐美徳隆, 藤原航三, 中嶋一雄
- Organizer
  第5回次世代の太陽光発電シンポジウム
- Place of Presentation
  宮崎県宮崎市
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Comprehensive research of sub-grain boundaries in Si bulk multicrystal for solar cells2008
- Author(s)
  K. Kutsukake, T. Ohtaniuchi, N. Usami, K. Fujiwara, and K. Nakajima
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technology(CGCT-4)
- Place of Presentation
  宮城県仙台市
- Year and Date
  2008-05-22
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth of high-quality Si multicrystals using dendritic casting method and mechanism to obtain high-quality crystals with low defects2008
- Author(s)
  K. Nakajima, K. Fujiwara, K. Kutsukake, N. Usami, and S. Okamoto
- Organizer
  23rd European Photovoltaic Solar Energy Conference and Exhibition
- Place of Presentation
  Valencia(Spain)
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Siバルク多結晶の組織制御による太陽電池の高効率化2008
- Author(s)
  宇佐美徳隆、藤原航三、沓掛健太朗、中嶋一雄
- Organizer
  電子情報通信学会・シリコン材料・デバイス研究会
- Place of Presentation
  沖縄県那覇市
- Year and Date
  2008-04-12
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] シリコンバルク多結晶におけるせん断応力と多結晶組織との関係2008
- Author(s)
  高橋勲, 宇佐美徳隆, 横山竜介, 沓掛健太朗, 森下浩平, 藤原航三, 中嶋一雄
- Organizer
  第5回次世代の太陽光発電シンポジウム
- Place of Presentation
  宮崎県宮崎市
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] On the generation mechanism of sub-grain boundaries during directional growth of Si bulk multicrystal2008
- Author(s)
  K. Kutsukake, N. Usami, K. Fujiwara, and K. Nakajima
- Organizer
  23rd European Photovoltaic Solar Energy Conference and Exhibition
- Place of Presentation
  Velencia(Spain)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Comprehensive study of sub-grain boundaries in Si multicrystals toward defect engineering for high-efficiency solar cell2008
- Author(s)
  N.Usami, K.Kutsukake, K.Fujiwara, K.Nakajima
- Organizer
  in the 5th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, USA
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Growth of high-quality Si multicrystals with same grain orientation and large grains using dendritic casting method and formation mechanism of dendrite crystals with parallel twins2008
- Author(s)
  K. Nakajima, K. Fujiwara, N. Usami, and S. Okamoto
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technology(CGCT-4)
- Place of Presentation
  宮城県仙台市
- Year and Date
  2008-05-22
- Data Source
  KAKENHI-PROJECT-20226001
[Presentation] Reduction of shunt resistance in solar cells based on Si multicrystals by accumulated imuurities at suberain boundaries2008
- Author(s)
  N. Usami, K.Kutsukake, K. Fujiwara, and K. Nakajima
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technoloev(CGCT-4)
- Place of Presentation
  宮城県仙台市
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PROJECT-20226001

1. USAMI Noritaka (20262107)

# of Collaborated Projects: 8 results

# of Collaborated Products: 169 results
2. UJIHARA Toru (60312641)

# of Collaborated Projects: 7 results

# of Collaborated Products: 47 results
3. SAZAKI Gen (60261509)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
4. FUJIWARA Kozo (70332517)

# of Collaborated Projects: 4 results

# of Collaborated Products: 78 results
5. SAKURAI Masaki (80235225)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. MIYASHITA Satoru (00219776)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. MATSUBARA Eiichiro (90173864)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. KUTSUKAKE Kentaro (00463795)

# of Collaborated Projects: 2 results

# of Collaborated Products: 86 results
9. MORISHITA Kohei (00511875)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results
10. 篠田弘造 (10311549)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. YONENAGA Ichiro (20134041)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
12. OHNO Yutaka (80243129)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
13. TOKUMOTO Yuki (20546866)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
14. MURAI Ryota (10624752)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. KOH Shinji (50323663)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. NAKAGAWA Kiyokazu (40324181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. SHISHIDO Toetsu (50125580)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
19. UDA Satoshi (90361170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. ダービン・ステファンデュエン (10301045)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 村松淳司 (40210059)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 佐藤修彰 (70154078)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 林好一 (20283632)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 北原邦紀 (60304250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 大平圭介 (40396510)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. 長田俊人 (00192526)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. ISHIKAWA Hiroshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NAKAJIMA Kazuo 中嶋 一雄

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Study of carbon impurities in bulk multicrystalline silicon

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Investigation of crystal growth mechanisms of Si crystals floating on Si melt and development of crystal growth technique to realize high-quality Si multicrystalsPrincipal Investigator

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ゲルマニウム結晶ウェハーの高温加圧加工によるX線用モノクロメーター結晶の研究Principal Investigator

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高温加圧法によるシリコン結晶ウェハーの変形加工と形状制御限界の研究Principal Investigator

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Growth of SiGe bulk single crystals with low defect density and creation of functional heterostructuresPrincipal Investigator

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シリコン系混晶半導体のグローバル成長制御

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過冷炉度を制御した融液成長法による太陽電池用Si多結晶の大粒径化と高効率化Principal Investigator

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Research on functional electronic devices based on straind-Si on SiGe alloy substrates

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回折および分光手法による酸化物表面での局在量子構造解析

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Development of Hamos-type X-ray micro-analyzer using a cylindrically, bent graphite monochromator

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タンパク質分子の等電点の新測定法と電極界面凝集化過程のその場観察

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Development of multicomponent bulk single crystal with uniform composition by the multicomponent zone-melting methodPrincipal Investigator

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Research on spatially and temporally resolved spectroscopy of semiconductor quantum structures by using ulta small probe light

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NAKAJIMA Kazuo 中嶋一雄