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SATOH Shinichi  佐藤 真一

ORCIDConnect your ORCID iD *help
Researcher Number 80382258
Affiliation (based on the past Project Information) *help 2006: University of Hyogo, Graduate School of Engineering, Professor, 大学院工学研究科, 教授
2005: 兵庫県立大学, 大学院・工学研究科, 教授
Review Section/Research Field
Except Principal Investigator
Applied materials science/Crystal engineering
Keywords
Except Principal Investigator
interface trap / capacitance-voltage method / scanning capacitance microscopy / contactless characterization / high-k gate insulator / 過渡容量分光法 / フェルミピニング / 界面トラップ / C-V法 / 走査型容量顕微鏡 / 非接触評価 / High-k絶縁膜
  • Research Projects

    (1 results)
  • Research Products

    (5 results)
  • Co-Researchers

    (1 People)
  •  Investigation of high-k gate insulator and its interface property by contactless capacitance transient spectroscopy

    • Principal Investigator
      YOSHIDA Haruhiko
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      University of Hyogo

All 2007 2006

All Journal Article

  • [Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy.2007

    • Author(s)
      S.Kuge, H.Yoshida, M.Inoue, S.Satoh
    • Journal Title

      Proc. of The 2007 International Meeting for Future of Electron Devices, Kansai, IEEE

      Pages: 111-112

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560012
  • [Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy2007

    • Author(s)
      S.Kuge, H.Yoshida, M.Inoue, S.Satoh
    • Journal Title

      Proc. of The 2007 International Meeting for Future of Electron Devices, Kansai, IEEE

      Pages: 111-112

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560012
  • [Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy2007

    • Author(s)
      S.Kuge, H.Yoshida, M.Inoue, S.Satoh
    • Journal Title

      Proc. of The 2007 International Meeting for Future of Electron Devices, Kansai, IEEE (in press)

    • Data Source
      KAKENHI-PROJECT-17560012
  • [Journal Article] Electrical Characterization of High-k Dielectrics/Si Interface by Contactless C-V Method2006

    • Author(s)
      K.Fukano, H.Yoshida, M.Inoue, S.Satoh
    • Journal Title

      Proc. of The 2006 International Meeting for Future of Electron Devices, Kansai, IEEE

      Pages: 63-64

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560012
  • [Journal Article] Electrical Characterization of High-k Dielectrics/Si Interface by Contactless C-V Method.2006

    • Author(s)
      K.Fukano, H.Yoshida, M.Inoue, S.Satoh
    • Journal Title

      Proc. of The 2006 International Meeting for Future of Electron Devices, Kansai, IEEE

      Pages: 63-64

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560012
  • 1.  YOSHIDA Haruhiko (90264837)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 5 results

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