Nagase Masanori 永瀬成範

… Alternative Names

NAGASE Masanori 永瀬成範

永瀬正範ナガセマサノリ

永瀬成範ナガセマサノリ

Less

Researcher Number	80399500
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2018 – 2023: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2015 – 2017: 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 2014: 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 2008: 独立行政法人産業技術総合研究所, ネットワークフォトニクス研究センター, 研究員 … More 2008: 産業技術総合研究所, ネットワークフォトニクス研究センター, 研究員 2007: 産業技術総合研究所, 超高速光信号処理デバイス研究ラボ, 研究員 2005 – 2006: 独立行政法人産業技術総合研究所, 超高速光信号処理デバイス研究ラボ, 研究員 Less
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment Except Principal Investigator Science and Engineering
Keywords	Principal Investigator 窒化物半導体 / 超高速情報処理 / トンネル現象 / 量子井戸 / サブバンド間遷移 / 共鳴トンネルダイオード / サブバンド間遷移現象 / 電子デバイス・機器 / 集積型アンテナ / 双安定性メカニズム / 窒化ガリウム / 双安定性 / テラヘルツ波 … More Except Principal Investigator … More ドーピング濃度 / 不均一広がり / 均一広がり / 位相緩和時間 / 歪補償 / 光閉じ込め / AlAsSb / AlAs / InGaAs / サブバンド間遷移スイッチ / 屈折率 / フォトリフレクタンス / 超高速全光スイッチ / 超高速光信号処理 / ピコ秒 / 周期構造 / 有効質量 / バンドオフセット / 歪補償量子井戸構造 / 超薄膜結合量子井戸 / 超高速ゲートスイッチ / MBE / 全光位相変調効果 / サブバンド間遷移 / 量子井戸 Less

N極性窒化物半導体成長技術を用いた高速サブバンド間遷移不揮発性メモリの高性能化Principal Investigator
- Principal Investigator
  
  永瀬成範
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of high-speed nonvolatile memory using intersubband transitions for next-generation computing technologyPrincipal Investigator
- Principal Investigator
  
  NAGASE Masanori
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of high-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodesPrincipal Investigator
- Principal Investigator
  
  NAGASE Masanori
- Project Period (FY)
  2017 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillationPrincipal Investigator
- Principal Investigator
  
  NAGASE Masanori
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Low-energy operation of ultrafast all-optical gate switch for all-optical signal processing
- Principal Investigator
  
  ISHIKAWA Hiroshi
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute of Advanced Industrial Science and Technology

[Journal Article] Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates2024
- Author(s)
  Nagase Masanori、Takahashi Tokio、Shimizu Mitsuaki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 135 Issue: 14
- DOI
  10.1063/5.0198244
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02214
[Journal Article] Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes2023
- Author(s)
  Nagase Masanori、Takahashi Tokio、Shimizu Mitsuaki
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 38 Issue: 4 Pages: 045011-045011
- DOI
  10.1088/1361-6641/acbaf8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02214
[Journal Article] Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory2020
- Author(s)
  Nagase Masanori、Takahashi Tokio、Shimizu Mitsuaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 218 Issue: 3 Pages: 2000495-2000495
- DOI
  10.1002/pssa.202000495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06409, KAKENHI-PROJECT-20H02214
[Journal Article] Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes2019
- Author(s)
  Nagase Masanori、Takahashi Tokio、Shimizu Mitsuaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 9 Pages: 091001-091001
- DOI
  10.7567/1347-4065/ab1b58
- NAID
  210000156853
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06409
[Journal Article] Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity2018
- Author(s)
  Nagase Masanori、Takahashi Tokio、Shimizu Mitsuaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 7 Pages: 070310-070310
- DOI
  10.7567/jjap.57.070310
- NAID
  210000149244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06409
[Journal Article] Resistance switching memory operation using the bistabilitｙ in current-voltage characteristics of GaN/AlN resonant tunneling diodes2016
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 10 Pages: 1003011-1003014
- DOI
  10.7567/jjap.55.100301
- NAID
  210000147108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420332
[Journal Article] Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory2015
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Journal Title
  
  Japanese Journal of Applied Phｙsics
  
  Volume: 54 Issue: 3 Pages: 0342011-0342018
- DOI
  10.7567/jjap.54.034201
- NAID
  210000144857
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420332
[Journal Article] Bistability characteristics of GaN/AlN resonant tunneling diodes caused by intersubband transition and electron accumulation in quantum well2014
- Author(s)
  永瀬成範、時崎高志
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 61 Issue: 5 Pages: 1321-1326
- DOI
  10.1109/ted.2014.2310473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420332
[Journal Article] Enhancement of all-optical cross phase modulation in InAlAs/AlAsSb coupled quantum ells using InAlAs coupling barrier2009
- Author(s)
  M. Nagase, R. Akimoto, T. Simoyama, C. Guangwei, T. Mozume, T. Hasama, and H. Ishikawa
- Journal Title
  
  IEEE J. Photonics Technol. Lett. vol.20, no.24
  
  Pages: 2183-2185
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Mechanism of ultrafast modulation of refractive index in photoexcited In_xGa_<1-x>/AlAs_ySb_<1-y> quantum well waveguides2008
- Author(s)
  G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa
- Journal Title
  
  Physical Rev. B vol.78, no.7
  
  Pages: 75308-75308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Enhancement of all-optical cross phase modulation in InAlAs/AlAsSb coupled quantum wells using InAlAs coupling barrier2008
- Author(s)
  M. Nagase, et al.
- Journal Title
  
  IEEE J. Photonics Technol. Lett. 20
  
  Pages: 2183-2185
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier-layer composition2007
- Author(s)
  M. Nagase, T. Mozume, T. Simoyama, T. Hasama, and H. Ishikawa
- Journal Title
  
  J. Crystal Growth vol.301-302
  
  Pages: 240-243
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy2007
- Author(s)
  T. Mozume, , J. Kasai, M. Nagase, T, Simoyama, T. Hasama, H. Ishikawa
- Journal Title
  
  J. Crystal Growth vol.301-302
  
  Pages: 177-180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier-layer composition2007
- Author(s)
  M.Nagase et al.
- Journal Title
  
  Journal of Crystal Growth vol. 301-302
  
  Pages: 240-243
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/AlAsSb quantum well2007
- Author(s)
  H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto and T. Hasama
- Journal Title
  
  Japan J. Appl. Phys. vol.46
- NAID
  10018902902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Patent] 共鳴トンネルダイオード素子及び不揮発性メモリ2024
- Inventor(s)
  永瀬成範、高橋言緒、清水三聡
- Industrial Property Rights Holder
  国立研究開発法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2024-038382
- Filing Date
  2024
- Data Source
  KAKENHI-PROJECT-20H02214
[Patent] 共鳴トンネルダイオード素子2017
- Inventor(s)
  永瀬成範、清水三聡、時崎高志
- Industrial Property Rights Holder
  永瀬成範、清水三聡、時崎高志
- Industrial Property Rights Type
  特許
- Filing Date
  2017
- Acquisition Date
  2019
- Data Source
  KAKENHI-PROJECT-17K06409
[Patent] 共鳴トンネルダイオード素子2017
- Inventor(s)
  永瀬成範、清水三聡、時崎高志
- Industrial Property Rights Holder
  永瀬成範、清水三聡、時崎高志
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-234229
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-17K06409
[Patent] 結合量子井戸構造2007
- Inventor(s)
  永瀬成範、秋本良一、石川浩
- Industrial Property Rights Holder
  産業技術総合研究所
- Filing Date
  2007-08-17
- Overseas
- Data Source
  KAKENHI-PROJECT-17068013
[Patent] 結合量子井戸構造2006
- Inventor(s)
  永瀬成範
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Number
  2006-222736
- Filing Date
  2006-08-07
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] GaN/AlN共鳴トンネルダイオードを用いた不揮発メモリのエンデュランス特性の評価2024
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02214
[Presentation] Characterization of Nonvolatile Memory Operations Using GaN/AlN Resonant Tunneling Diodes Fabricated on SOI Substrate2023
- Author(s)
  Nagase Masanori、Takahashi Tokio、Shimizu Mitsuaki
- Organizer
  Compound Semiconductor Week 2023 (The 49th International Symposium on Compound Semiconductors/The 34th International Conference on Indium Phosphide and Related Materials)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02214
[Presentation] Si(111)基板上に作製したGaN/AlN共鳴トンネルダイオードの不揮発メモリ特性の評価2022
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02214
[Presentation] Si(111)基板上へのGaN/AlN共鳴トンネルダイオードの作製2022
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02214
[Presentation] GaN/AlN共鳴トンネルダイオードを用いた不揮発メモリ特性のON/OFF比増大2021
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02214
[Presentation] 高効率コンピューティングに向けた高速不揮発メモリの開発2020
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  InterOpto 2020（技術展示会）
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] 窒化物半導体デバイスの開発2020
- Author(s)
  永瀬成範
- Organizer
  文部科学省ナノテクノロジープラットフォーム利用成果発表会
- Invited
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] New nonvolatile memory using GaN-based resonant tunneling diodes2019
- Author(s)
  Nagase Masanori
- Organizer
  The EMN Meeting on Epitaxy 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] GaN/AlN共鳴トンネルダイオードを用いた不揮発メモリ特性の評価2019
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] Characterization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes2018
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  The 45th International Symposium on Compound Semiconductors (ISCS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] データセンターの省電力化を可能にする不揮発メモリ技術2018
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  InterOpto 2018（技術展示会)
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] GaN/AlN共鳴トンネルダイオードの双安定性を用いた不揮発メモリの安定動作化2017
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06409
[Presentation] 不揮発メモリ応用へ向けたGaN/AlN共鳴トンネルダイオードの双安定性の評価2017
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26420332
[Presentation] GaN-Basd Resonant Tunneling Diodes and Their Application to THz Sources2016
- Author(s)
  永瀬成範
- Organizer
  The EMN Meeting on Terahertz 2016
- Place of Presentation
  サン・セバスティアン（スペイン）
- Year and Date
  2016-05-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420332
[Presentation] GaN/AlN共鳴トンネルダイオードで生じる双安定性の評価2016
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26420332
[Presentation] InGaAs/AlAs/AlAsSb 結合量子井戸サブバンド間遷移を用いた超高速全光スイッチの開発 (査読なし)2008
- Author(s)
  永瀬成範, 他
- Organizer
  レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InGaAs/InAlAs/AlAsSb結合量子井戸サブバンド間遷移を用いた超高速前光型スイッチの開発2008
- Author(s)
  永瀬成範, 他
- Organizer
  レーザ・量子エレクトロニクス研究会
- Place of Presentation
  機械振興
- Year and Date
  2008-06-27
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InAlAs結合障壁を用いたInGaAs/AlAsSb結合量子井戸におけるXPM効率改善2008
- Author(s)
  永瀬成範
- Organizer
  第68回応用物理学会秋季学術講演会
- Place of Presentation
  千葉
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Fabrication of all-optical switch based on intersubband transition in InGaAs/AlAsSb quantum wells with DFB structure2008
- Author(s)
  M. Nagase, et al.
- Organizer
  International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Versailles, France
- Year and Date
  2008-05-28
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Fabrication of all-optical switch based on intersubband transition in InGaAs/AlAsSb quantum wells with DFB structure (査読あり)2008
- Author(s)
  M. Nagase, R. Akimoto, K. Akita, H. Kawashima, T. Mozume, T. Hasama, and H. Ishikawa
- Organizer
  Indium Phosphide and Related Materials
- Place of Presentation
  Versailles France
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InAlAs 結合障壁を用いたInGaAs/AlAsSb結合量子井戸におけるXPM効率改善 (査読なし)2008
- Author(s)
  永瀬成範, 他
- Organizer
  第55回応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Improvement of XPM efficiency in InGaAs/AIAsSb coupling barrier for intersubband transition optical switrh2007
- Author(s)
  M.Nagase, et. al.
- Organizer
  Conf.on Optical Fiber Communications
- Place of Presentation
  San Diego,USA
- Year and Date
  2007-02-28
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] DFB構造を有するInGaAs/AlAsSb量子井戸サブバンド間遷移スイッチの製作 (査読なし)2007
- Author(s)
  永瀬成範, 他
- Organizer
  第68回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] DFB構造を有するlnGaAs/AIAsSb量子井戸サブバンド問遷移スイッチの作製2007
- Author(s)
  永瀬成範, 他
- Organizer
  第68回応用物理学会秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Improvement of XPM efficiency in InGaAs/AlAsSb coupling barrier for intersubband transition optical switch (査読あり)2007
- Author(s)
  M. Nagase, et al.
- Organizer
  Conf. on Optical Communications
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Intersubband transitions in InGaAs/AIAsSb coupled double quantum wells with InAIAs counling barriers2007
- Author(s)
  M.Nagase, et. al.
- Organizer
  Int.Conf.on Indium Phosphide and Related Materials
- Place of Presentation
  Matsue,Japan
- Year and Date
  2007-05-17
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Ultrafast all-optical switches using intersubband transition in quantum wells (査読なし)2006
- Author(s)
  H. Ishikawa, T. Simoyama, M. Nagase, R. Akimoto, B. Li, K. Akita, and T. Hasama
- Organizer
  International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Princeton, NJ, USA (invited)
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InGaAs-based quantum wells for ultrafast all-optical switches using intersubband transitions (査読なし)2006
- Author(s)
  T. Mozume, M. Nagase, T. Simoyama, and H. Ishikawa
- Organizer
  JSPS-UNT Joint Symposium on Nanoscale Materials for Optoelectronics and Biotechnology
- Place of Presentation
  Denton, Texas (invited)
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Intersubband transitions in novel strained coupled quantum wells based on In_<0.53>Ga_<0.47>As grown by molecular beam epitaxy (査読あり)2006
- Author(s)
  M. Nagase, T. Mozume, T. Simoyama, T. Hasama, and H. Ishikawa
- Organizer
  International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Princeton, NJ, USA
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Temperature dependence of current-voltage characteristics of GaN/AlN resonant tunneling diodes
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  モンペリエ(フランス)
- Year and Date
  2014-05-11 – 2014-05-15
- Data Source
  KAKENHI-PROJECT-26420332
[Presentation] GaN/AlN共鳴トンネルダイオードで生じる双安定性の劣化メカニズム
- Author(s)
  永瀬成範、高橋言緒、清水三聡
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学(神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26420332

1. ISHIKAWA Hiroshi (50392585)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
2. MOZUME Teruo (20399497)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
3. KAWASHIMA Hitoshi (90356840)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
4. SUGIMOTO Yoshimasa (60415784)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. IKEDA Noki (10415771)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. AKIMOTO Ryoichi (30356349)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
7. GOZU Shin-ichro (90392729)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. HAZAMA Toshifumi (90357765)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KUWATSUKA Haruhiko (40417150)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. AKITA Kazumichi (50470050)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. OGASAWAR Takeshi (00392598)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. GUAN Lim Cheng (10470048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

Nagase Masanori 永瀬 成範

NAGASE Masanori 永瀬 成範

永瀬 正範 ナガセ マサノリ

永瀬 成範 ナガセ マサノリ

Research Projects

Research Products

Co-Researchers

N極性窒化物半導体成長技術を用いた高速サブバンド間遷移不揮発性メモリの高性能化Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of high-speed nonvolatile memory using intersubband transitions for next-generation computing technologyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of high-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Low-energy operation of ultrafast all-optical gate switch for all-optical signal processing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes2019

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Resistance switching memory operation using the bistabilitｙ in current-voltage characteristics of GaN/AlN resonant tunneling diodes2016

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Bistability characteristics of GaN/AlN resonant tunneling diodes caused by intersubband transition and electron accumulation in quantum well2014

Author(s)

Journal Title

DOI

Nagase Masanori 永瀬成範

NAGASE Masanori 永瀬成範

永瀬正範ナガセマサノリ

永瀬成範ナガセマサノリ