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OHGAKI Takeshi  大垣 武

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OGAKI Takeshi  大垣 武

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Researcher Number 80408731
Other IDs
Affiliation (Current) 2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主任研究員
Affiliation (based on the past Project Information) *help 2023: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主任研究員
2020 – 2022: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員
2016 – 2017: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点 電気・電子機能分野 電子セラミックスグループ, 主任研究員
2015: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員
2014: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 … More
2013 – 2014: 独立行政法人物質・材料研究機構, その他部局等, その他
2012: 独立行政法人物質・材料研究機構, その他部局等, 研究員
2012: 独立行政法人物質・材料研究機構, 光・電子機能G, 主任研究員
2012: 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員
2007 – 2010: 独立行政法人物質・材料研究機構, センサ材料センター, 研究員 Less
Review Section/Research Field
Principal Investigator
Basic Section 29020:Thin film/surface and interfacial physical properties-related / Thin film/Surface and interfacial physical properties / Inorganic materials/Physical properties
Except Principal Investigator
Environmental technology/Environmental materials / Inorganic materials/Physical properties / Applied materials science/Crystal engineering / Nanostructural science
Keywords
Principal Investigator
薄膜 / 窒化スカンジウム / 電気特性 / 分子線エピタキシー / 光・電気特性 / 非化学量論的化合物 / 光・電子特性 / ドーピング / 結晶構造 / 窒化ガリウム … More
Except Principal Investigator
… More 酸化物半導体 / 酸化亜鉛 / 光電子分光 / 自発分極 / 極性結晶 / 電子状態 / 極性表面 / 伝送線路 / 高周波デバイス / 酸化インジウム / 導波路 / マイクロ波 / ミリ波 / アンテナ / 高周波素子 / 透明導電体 / 高周波物性 / 透明導電性酸化物 / 表面構造 / 欠陥構造 / 半導体ウエファー / 固相拡散 / イオン注入 / 研磨 / 表面欠陥 / 単結晶ウエファー / エピタキシャル成長 / 圧電特性 / 精密研磨 / ウエファー / SIMS / 拡散 / 人工超格子 / 窒化物半導体 / フォノン / 同位体 Less
  • Research Projects

    (7 results)
  • Research Products

    (66 results)
  • Co-Researchers

    (14 People)
  •  Control of optoelectronic properties of non-stoichiometric compounds ScN by impurity dopingPrincipal Investigator

    • Principal Investigator
      OHGAKI Takeshi
    • Project Period (FY)
      2020 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 29020:Thin film/surface and interfacial physical properties-related
    • Research Institution
      National Institute for Materials Science
  •  Carrier doping in ScN films with high electron mobilityPrincipal Investigator

    • Principal Investigator
      Ohgaki Takeshi
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      National Institute for Materials Science
  •  Synthesis of zinc-blende GaN films using a ScN layerPrincipal Investigator

    • Principal Investigator
      OHGAKI Takeshi
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Inorganic materials/Physical properties
    • Research Institution
      National Institute for Materials Science
  •  Charge separation of photo-excited electric charge carriers and its interaction with internal electric filed induced by crystalline polarity

    • Principal Investigator
      OHASHI Naoki
    • Project Period (FY)
      2011 – 2012
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Environmental technology/Environmental materials
    • Research Institution
      National Institute for Materials Science
  •  Evaluation of high frequency properties of transparent zinc oxide thin films and their application

    • Principal Investigator
      HANEDA Hajime
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Inorganic materials/Physical properties
    • Research Institution
      National Institute for Materials Science
  •  Research on Physics and Chemistry of ZnO and its related alloy crystal wafers aiming to utilization of ZnO based devices

    • Principal Investigator
      OHASHI Naoki
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      National Institute for Materials Science
  •  Synthesis of compound-semiconductor superlattice structures with isotopic modulation and their properties

    • Principal Investigator
      HANEDA Hajime
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Nanostructural science
    • Research Institution
      National Institute for Materials Science

All 2024 2022 2021 2018 2017 2016 2014 2013 2012 2011 2010 2009 2008 Other

All Journal Article Presentation Patent

  • [Journal Article] Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films2017

    • Author(s)
      Ohgaki Takeshi、Sakaguchi Isao、Ohashi Naoki、Haneda Hajime
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 476 Pages: 12-16

    • DOI

      10.1016/j.jcrysgro.2017.08.002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Journal Article] Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy2013

    • Author(s)
      Takeshi Ohgaki, Ken Watanabe, Yutaka Adachi, Isao Sakaguchi, Shunichi Hishita, Naoki Ohashi, Hajime Haneda
    • Journal Title

      Journal of Applied Physics

      Volume: 114 Issue: 9

    • DOI

      10.1063/1.4820391

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Journal Article] Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy2012

    • Author(s)
      Yao, Y., Sekiguchi, T., Ohgaki, T., Adachi, Y., Ohashi, N.
    • Journal Title

      Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

      Volume: 120 (1407) Pages: 513-519

    • NAID

      130004480114

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23651081
  • [Journal Article] Polarity-dependent photoemission spectra of wurtzite-type zinc oxide2012

    • Author(s)
      J. Williams, H. Yoshikawa, S. Ueda, Y. Yamashita, K. Kobayashi, Y. Adachi, H. Haneda, T. Oogaki, H. Miyazaki, Takamasa Ishigaki, N. Ohash
    • Journal Title

      Appl. Phys. Lett

      Volume: 100 Issue: 5 Pages: 51902-51902

    • DOI

      10.1063/1.3673553

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560033, KAKENHI-PROJECT-23651081
  • [Journal Article] Effect of Post-Annealing on Structural and Optical Properties, and Elemental Distribution in Heavy Eu-Implanted ZnO Thin Films2010

    • Author(s)
      I.Sakaguchi, T.Ohgaki, Y.Adachi, S.Hishita, N.Ohashi, H.Haneda
    • Journal Title

      J.Ceram.Soc.Jpn. 118巻

      Pages: 1087-1089

    • NAID

      130000420751

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Nitrogen isotopic effect in Ga15N epifilms grown by plasma-assisted molecular-beam epitaxy2010

    • Author(s)
      YZ Yao, T. Ohgaki, N. Fukata, 他4名
    • Journal Title

      Scripta Mater. 62

      Pages: 516-519

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Journal Article] Correlation Between Film Thickness and Zinc Defect Distribution along the Growth Direction in an Isotopic Multilayer ZnO Thin Film Grown By Pulsed Laser Deposition Analyzed Using the Internal Diffusion Method2010

    • Author(s)
      K.Matsumoto, Y.Adachi, T.Ohgaki, N.Ohashi, H.Haneda, I.Sakaguchi
    • Journal Title

      Solid State Commun. 150巻

      Pages: 43-44

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Correlation Between Film Thickness and Zinc Defect Distribution along the Growth Direction in An Isotopic Multilayer ZnO Thin Film Grown By Pulsed Laser Deposition Analyzed Using The Internal Diffusion Method2010

    • Author(s)
      K.Matsumoto, Y.Adachi, T.Ohgaki, N.Ohashi, H.Haneda, I.Sakaguchi
    • Journal Title

      Solid State Commun.

      Volume: 150 Pages: 43-44

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Oxygen Tracer Diffusion in Magnesium-doped ZnO Ceramics2010

    • Author(s)
      I.Sakaguch, K.Matsumoto, T.Ohgaki, Y.Adachi, K.Watanabe, N.Ohashi, H.Haneda
    • Journal Title

      J.Ceram.Soc.Jpn 118巻

      Pages: 362-365

    • NAID

      130000304748

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Effect of Post-Annealing on Structural and Optical Properties, and Elemental Distribution in Heavy Eu-Implanted ZnO Thin Films2010

    • Author(s)
      I.Sakaguchi, T.Ohgaki, Y.Adachi, S.Hishita, N.Ohashi, H.Haneda
    • Journal Title

      J.Ceram.Soc.Jpn.

      Volume: 118 Pages: 1087-1089

    • NAID

      130000420751

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Oxygen Tracer Diffusion in Magnesium-doped ZnO Ceramics2010

    • Author(s)
      I.Sakaguch, K.Matsumoto, T.Ohgaki, Y.Adachi, K.Watanabe, N.Ohashi, H.Haneda
    • Journal Title

      J.Ceram.Soc.Jpn

      Volume: 118 Pages: 362-365

    • NAID

      130000304748

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Development of ZnO-based surface plasmon resonance gas sensor and analysis of UV irradiation effect on NO_2 desorption from ZnO thin films2010

    • Author(s)
      K.Watanabe, K.Matsumoto, T.Ohgaki, I.Sakaguchi, N.Ohashi, S.Hishita, H.Haneda
    • Journal Title

      JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 118

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Ion Implantation and Diffusion Behavior of Silver in Zinc Oxide2010

    • Author(s)
      I.Sakaguchi, K.Watanabe, T.Ohgaki, T.Nakagawa, S.Hishita, Y.Adachi, N.Ohashi, H.Haneda
    • Journal Title

      J Ceram.Soc.Jpn 118巻

      Pages: 217-219

    • NAID

      130000304716

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] High-pressure phase transitions in BiMO_3(M=Al, Ga, and In) : In situ x-ray diffraction and Raman scattering experiments2009

    • Author(s)
      T.Ohgaki, et al.
    • Journal Title

      Physical Review B 80

      Pages: 214103-214103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Journal Article] Oxygen diffusion in zinc-oxide thin films prepared by pulsed-laser deposition2009

    • Author(s)
      K. Matsumoto, Y. Adachi, T. Ohgaki, 他3名
    • Journal Title

      J. Ceram. Soc. Jpn. 117

      Pages: 666-670

    • NAID

      10025967877

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Journal Article] Interface structure and polarity of GaN/ZnO heterostructure2009

    • Author(s)
      T. Ohgaki
    • Journal Title

      J. Ceram. Soc. Jpn. 117

      Pages: 475-481

    • NAID

      10025967123

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Journal Article] Interface structure and Polarity of GaN/ZnO heterostructure2009

    • Author(s)
      T.Ohgaki, et al.
    • Journal Title

      Journal of Ceramics Society of Japan 117

      Pages: 475-481

    • NAID

      10025967123

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Journal Article] Synthesis and Characterization of ZnO/Glass/ZnO Structures Showing Highly Nonlinear Current-Voltage Characteristics2009

    • Author(s)
      N.Ohashi, K.Kataoka, T.Ohgaki, I.Sakaguchi, H.Haneda
    • Journal Title

      MATERIALS TRANSACTIONS 50

      Pages: 1060-1066

    • NAID

      10024814653

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Positive Hall Coefficients Obtained from Contact Misplacement on Evident n-Type ZnO Films and Crystals2008

    • Author(s)
      T.Ohgaki, N.Ohashi, S.Sugimura, H.Ryoken, I.Sakaguchi, Y.Adachi, H.Haneda
    • Journal Title

      J.Mater.Res. 23巻

      Pages: 2293-2295

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals2008

    • Author(s)
      大垣武
    • Journal Title

      JOURNAL OF MATERIALS RESEARCH 23

      Pages: 2293-2295

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Journal Article] Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals2008

    • Author(s)
      T. Ohgaki, et al.
    • Journal Title

      J. Mater. Res. 23

      Pages: 2293-2295

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Patent] 酸化亜鉛単結晶ウエファーの製造法2010

    • Inventor(s)
      大橋直樹,羽田肇,大垣武,佐藤充,前田克己,杉村茂昭
    • Industrial Property Rights Holder
      独)物質・材料研究機構,東京電波株式会社
    • Acquisition Date
      2010-10-22
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Patent] ウルツ鉱型III-V族窒化物薄膜結晶の製造法2009

    • Inventor(s)
      大橋直樹,羽田肇,大垣武,佐藤充,前田克己,杉村茂昭
    • Industrial Property Rights Holder
      独)物質・材料研究機構,東京電波株式会社
    • Acquisition Date
      2009-11-27
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Patent] 非晶質基材2008

    • Inventor(s)
      安達裕,大垣武,坂口勲,大橋直樹
    • Industrial Property Rights Holder
      独)物質・材料研究機構
    • Patent Publication Number
      2010-050342
    • Filing Date
      2008-08-22
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Presentation] MBE法で作製したScN薄膜の非化学量論的組成と電気特性2024

    • Author(s)
      大垣 武・坂口 勲・大橋 直樹
    • Organizer
      2024年 第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K05335
  • [Presentation] MBE法によるGaN/ScNヘテロ構造の作製2022

    • Author(s)
      大垣 武・坂口 勲・大橋 直樹
    • Organizer
      日本セラミックス協会 2022年年会
    • Data Source
      KAKENHI-PROJECT-20K05335
  • [Presentation] MBE法により成長させたScN薄膜へのプラズマ照射の影響2021

    • Author(s)
      大垣 武、坂口 勲、大橋 直樹
    • Organizer
      日本セラミックス協会 2021年年会
    • Data Source
      KAKENHI-PROJECT-20K05335
  • [Presentation] サファイアr面上に成長したScN薄膜の構造と電子移動度2018

    • Author(s)
      大垣 武、坂口 勲、大橋 直樹、羽田 肇
    • Organizer
      第65回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Presentation] サファイアr面基板上へのScN薄膜のヘテロエピタキシャル成長2017

    • Author(s)
      大垣武、坂口勲、大橋直樹、羽田肇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜 (神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Presentation] Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films2017

    • Author(s)
      Ohgaki Takeshi、Sakaguchi Isao、Ohashi Naoki、Haneda Hajime
    • Organizer
      STAC-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Presentation] Molecular beam epitaxy growth of (100)-oriented ScN films2017

    • Author(s)
      Ohgaki Takeshi、Sakaguchi Isao、Ohashi Naoki、Haneda Hajime
    • Organizer
      2017 E-MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Presentation] MBE Growth of Scandium Nitride Films on M-face Sapphire Substrates2016

    • Author(s)
      Takeshi Ohgaki, Isao Sakaguchi, Naoki Ohashi, Hajime Haneda
    • Organizer
      The 10th Asian Meeting on Electroceramics
    • Place of Presentation
      Taipei (Taiwan)
    • Year and Date
      2016-12-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Presentation] (100)配向ScN薄膜の光・電気特性2016

    • Author(s)
      大垣武、坂口勲、 大橋直樹、羽田肇
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス (東京都目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K04684
  • [Presentation] サファイア基板上へのScN薄膜のヘテロ成長とその電気特性2014

    • Author(s)
      大垣 武, 渡邉 賢, 坂口 勲, 大橋 直樹, 羽田 肇
    • Organizer
      2014年 第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス, 相模原市
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] Growth condition dependence of electric properties of ScN films on (100) MgO substrates prepared by molecular beam epitaxy2013

    • Author(s)
      Takeshi Ohgaki, Ken Watanabe, Yutaka Adachi, Isao Sakaguchi, Shunichi Hishita, Naoki Ohashi, Hajime Haneda
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      University of Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] MBE法により作製したScN薄膜の電気特性2013

    • Author(s)
      大垣 武, 渡邉 賢, 坂口 勲, 大橋 直樹, 羽田 肇
    • Organizer
      2013年 第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス, 田辺市
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] MBE法によるサファイア基板上へのScN薄膜のヘテロエピタキシャル成長2013

    • Author(s)
      大垣 武, 渡邉 賢, 坂口 勲, 菱田 俊一, 大橋 直樹, 羽田 肇
    • Organizer
      第33回エレクトロセラミックス研究討論会
    • Place of Presentation
      文部科学省研究交流センター, つくば市
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] Molecular Beam Epitaxial Growth of ScN Films on Sapphire Substrates2013

    • Author(s)
      Takeshi Ohgaki, Ken Watanabe, Yutaka Adachi, Isao Sakaguchi, Shunichi Hishita, Naoki Ohashi, Hajime Haneda
    • Organizer
      7th International Conference on the Science and Technology for Advance Ceramics
    • Place of Presentation
      Mielparque-Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] MBE法によるサファイアr面基板上への窒化スカンジウム薄膜の作製2012

    • Author(s)
      大垣 武, 安達 裕, 坂口 勲, 菱田 俊一, 大橋 直樹, 羽田 肇
    • Organizer
      日本セラミックス協会第25回秋季シンポジウム
    • Place of Presentation
      名古屋市
    • Year and Date
      2012-09-20
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] ワイドギャップ材料の探索とその特性評価2012

    • Author(s)
      大橋直樹, 島村清史, 谷口孝志, 渡邊賢司, 坂口勲, 大垣武, 菱田俊一, 北村健二, 羽田肇
    • Organizer
      学術振興第166委員会研究会
    • Place of Presentation
      東京都
    • Year and Date
      2012-04-27
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] Defects and charge compensation in wide bandgap semiconductors2012

    • Author(s)
      OHASHI Naoki, SAKAGUCHI Isao, WATANABE Ken, ADACHI Yutaka, TAKESHI OGAKI, HISHITA Shunichi, MIYAZAKI Hiroki, Jesse Willia, ISHIGAKI Takamasa
    • Organizer
      Solid State Chemistry 2012 (Invited)
    • Place of Presentation
      University of Pardubice, Pardubice,チェコ
    • Data Source
      KAKENHI-PROJECT-23651081
  • [Presentation] Defects and charge compensation in wide bandgap semiconductors2012

    • Author(s)
      N. Ohashi, I. Sakaguchi, K. Watanabe, Y. Adachi, T. Ohgaki, S. Hishita, H. Miyazaki, T. Ishigaki, H. Haneda
    • Organizer
      Solid State Chemistry 2012
    • Place of Presentation
      Pardubice, Czech
    • Invited
    • Data Source
      KAKENHI-PROJECT-23651081
  • [Presentation] ウルツ鉱型半導体薄膜の極性判定とその制御2011

    • Author(s)
      大橋直樹, Jesse Williams, 安達裕, 吉川英樹, 山下良之, 上田茂典, 大垣武, 坂口勲, 菱田俊一, 小林啓介
    • Organizer
      日本金属学会2011年度秋期講演大会
    • Place of Presentation
      沖縄コンベンションセンターおよびカルチャーリゾートフェストーネ,宜野湾
    • Data Source
      KAKENHI-PROJECT-23651081
  • [Presentation] Charge Compensation in Oxide Semiconductors2010

    • Author(s)
      大橋直樹, 安達裕, 坂口勲, B.Li, J.Li, J.Williams, K.Matsumoto, T.Ohgaki, S.Ueda, H.Yoshikawa, K.Kobayashi, H.Okushi, J.Chen, T.Sekiguchi, H.Haneda
    • Organizer
      International Symposium On Compound Semiconductor 2010
    • Place of Presentation
      高松
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Presentation] ルツ鉱型ワイドギャンプ半導体中の欠陥の挙動2010

    • Author(s)
      N.Ohashi, I.Sakaguchi, Y.Adachi, T.Ohgaki, H.Haneda
    • Organizer
      励起ナノプロセス研究会第6回研究会
    • Place of Presentation
      障害者会館・堺市(大阪府)
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Presentation] Precipitations of ZnO particles from solutions and their chemical sensing properties2010

    • Author(s)
      H.Haneda, K.Watanabe, K. Matsumoto, N. Saito(Shinjo), T.Ohgaki, Y.Moriura, I.Sakaguchi, Y.Adachi, N.Ohashi
    • Organizer
      2010 MRS Spring Meeting
    • Place of Presentation
      San Fransico USA
    • Year and Date
      2010-04-09
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] Nitrogen diffusion in AlN thin films deposited by a MBE method2010

    • Author(s)
      H.Haneda, T.Ohgaki, T.Ogino, K.Watanabe, I.Sakaguchi, N.Ohashi
    • Organizer
      STAC-4
    • Place of Presentation
      Tokohama Japan
    • Year and Date
      2010-06-23
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] Charge Compensation In Oxide Semiconductors2010

    • Author(s)
      N.Ohashi, Y.Adachi, I.Sakaguchi, B.Li, J.Li, J.Williams, K.Matsumoto, T.Ohgaki, S.Ueda, H.Yoshikawa, K.Kobayashi, H.Okushi, J.Chen, T.Sekiguchi, H.Haneda
    • Organizer
      International Symposium On Compound Semiconductor 2010
    • Place of Presentation
      高松国際会議場・高松市(香川県)
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Presentation] Self -Diffusion properties in ZnO thin films deposited by PLD Method2010

    • Author(s)
      H.Haneda, I.Sakaguchi, K.Matsumoto, T.Ogino, S.Hishita, Y.Adachi, T.Ohgaki, N.Ohashi
    • Organizer
      The 27th International Korea-Japan Seminar on ceramics
    • Year and Date
      2010-11-24
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] Diffusion behavior in thin film with wurtzite crystal structure2010

    • Author(s)
      H.Haneda, N.Ohashi, I.Sakaguchi, Y.Adachi, T.Ohgaki, K.Matsumoto
    • Organizer
      Electroceramics XII
    • Place of Presentation
      Trondheim Norway
    • Year and Date
      2010-06-15
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] ルツ鉱型ワイドギャップ半導体中の欠陥の挙動2010

    • Author(s)
      大橋直樹, 坂口勲, Y.Adachi, T.Ohgaki, H.Haneda
    • Organizer
      励起ナノプロセス研究会 第6回研究会
    • Place of Presentation
      堺
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Presentation] MBE法による窒化スカンジウム薄膜の作製2010

    • Author(s)
      大垣武
    • Organizer
      日本セラミックス協会2010年年会
    • Place of Presentation
      東京農工大学、小金井市
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] Diffusion Phenomena in ZnO Thin Films Deposited by PLD Method2010

    • Author(s)
      H.Haneda, I.Sakaguchi, K.Matsumoto, T.Ogino, S.Hishita, Y.Adachi, T.Ohgaki, N.Ohashi
    • Organizer
      International Congress on ceramics(ICC3)
    • Place of Presentation
      Osaka Japan
    • Year and Date
      2010-11-18
    • Data Source
      KAKENHI-PROJECT-22360277
  • [Presentation] Molecular beam epitaxy growth of Al^<14>N/Al^<15>N isotope superlattices2009

    • Author(s)
      T.Ohgaki
    • Organizer
      The 26th International Japan-Korea Seminar on Ceramics
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] Al^<14>N/Al^<15>N同位体人工超格子のラマンスペクトル2009

    • Author(s)
      大垣武
    • Organizer
      日本セラミックス協会第22回秋季シンポジウム
    • Place of Presentation
      愛媛大学、松山市
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] Defects in Wide Band Gap Semiconductors2008

    • Author(s)
      N.Ohashi, I.Sakaguchi, Y.Adachi,, Y.Wada, T.Ohgaki, S.Ueda, H.Yoshikawa, T.Osawa, K.Matsumoto, K.Kobayashi, H.Haneda
    • Organizer
      2nd Intl.Conf.Sci.Tech.Adv.Ceramics
    • Place of Presentation
      幕張
    • Data Source
      KAKENHI-PROJECT-20246007
  • [Presentation] Siとの接合を利用した酸化物半導体材料の局在準位の評価2008

    • Author(s)
      大垣 武
    • Organizer
      2008年春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学
    • Year and Date
      2008-03-28
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] MBE法によるAl^<14>N/Al^<15>N同位体超格子の作製2008

    • Author(s)
      大垣武
    • Organizer
      日本セラミックス協会 第21回秋季シンポジウム
    • Place of Presentation
      北九州国際会議場,福岡県
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] Synthesis of Al14N and Al15N Films by Molecular Beam Epitaxy2008

    • Author(s)
      T. Ohgaki
    • Organizer
      The 6th Asian Meeting on Electroceramics
    • Place of Presentation
      NIMS and Tsukuba Center for Institutes, Japan
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] Synthesis of Al^<14>N and Al^<15>N Films by Molecular Beam Epitaxy2008

    • Author(s)
      T. Ohgaki
    • Organizer
      The 6th Asian Meeting on Electroceramics
    • Place of Presentation
      NIMS and Tsukuba Center for Institutes, Japan
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] Synthesis of high crystalline InN/ZnO heterostructure by insertion of interface nanostructure2008

    • Author(s)
      T. Ohgaki
    • Organizer
      INC4, Nanotech in Japan
    • Place of Presentation
      Hitotsubashi Memorial Hall, Japan
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] 窒素同位体を用いたAIN薄膜の作製2008

    • Author(s)
      大垣 武
    • Organizer
      日本セラミックス協会2008年年会
    • Place of Presentation
      長岡技術科学大学
    • Year and Date
      2008-03-21
    • Data Source
      KAKENHI-PROJECT-19201019
  • [Presentation] MBE法で作製したScN薄膜の光・電気特性におけるSc/N比の影響

    • Author(s)
      大垣武, 坂口勲, 大橋直樹, 羽田肇
    • Organizer
      日本セラミックス協会 第27回秋季シンポジウム
    • Place of Presentation
      鹿児島大学郡元キャンパス, 鹿児島市
    • Year and Date
      2014-09-09 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] Heteroepitaxial growth and electric properties of scandium nitride films on m-face sapphire substrates

    • Author(s)
      Takeshi Ohgaki, Ken Watanabe, Isao Sakaguchi, Shunichi Hishita, Naoki Ohashi, Hajime Haneda
    • Organizer
      E-MRS 2014 SPRING MEETING
    • Place of Presentation
      Congress Center, Lille, France
    • Year and Date
      2014-05-26 – 2014-05-30
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] Heteroepitaxial growth of scandium nitride films on m-face sapphire substrates

    • Author(s)
      Takeshi Ohgaki, Ken Watanabe, Isao Sakaguchi, Shunichi Hishita, Naoki Ohashi, Hajime Haneda
    • Organizer
      The 8th International Conference on the Science and Technolog
    • Place of Presentation
      Mielparque-Yokohama, Yokohama, Japan
    • Year and Date
      2014-06-25 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-25820337
  • [Presentation] MBE法で作製したScN薄膜のⅢ/Ⅴフラックス比依存性

    • Author(s)
      大垣武, 坂口勲, 大橋直樹, 羽田肇
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス, 平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25820337
  • 1.  HANEDA Hajime (70354420)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 23 results
  • 2.  OHASHI Naoki (60251617)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 26 results
  • 3.  SAKAGUCHI Isao (20343866)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 23 results
  • 4.  ADACHI Yutaka (30354418)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 23 results
  • 5.  HISHITA Shunichi (40354419)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 7 results
  • 6.  SAITO Noriko (20354417)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 7.  WADA Yoshiki (90343847)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 8.  YUSA Hitoshi (10343865)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  ISHIOKA Kunie (30343883)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  KITAJIMA Masahiro (00343830)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  ISHIGAKI Takamasa (40343842)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  YOSHIKAWA Hideki (20354409)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 13.  UEDA Shigenori (20360505)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 14.  山下 良之
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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