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Makino Takahiro  牧野 高紘

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MAKINO Takahiro  牧野 高紘

MAKINO Takakahiro  牧野 高紘

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Researcher Number 80549668
Affiliation (Current) 2025: 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所 量子機能創製研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help 2024 – 2025: 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所 量子機能創製研究センター, 主幹研究員
2022 – 2023: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 量子機能創製研究センター, 主幹研究員
2021: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主幹研究員
2017 – 2020: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主任研究員(定常)
2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究員 … More
2015: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員
2013 – 2014: 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究員
2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職
2010 – 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 博士研究員 Less
Review Section/Research Field
Principal Investigator
General applied physics / Basic Section 29030:Applied condensed matter physics-related / Applied physics, general
Except Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 14:Plasma science and related fields / Broad Section C / Basic Section 31010:Nuclear engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Electron device/Electronic equipment / Particle/Nuclear/Cosmic ray/Astro physics
Keywords
Principal Investigator
パワーデバイス / シングルイベント / SiC / 耐放射線性 / MOSFET / Single Event Burnout / ショットキーバリアダイオード / 放射線 / 炭化ケイ素 / ソフトエラー … More / SOI / イオン照射 / 論理LSI / SETパルス … More
Except Principal Investigator
耐放射線 / CMOS集積回路 / 量子ビーム産業応用 / 放射線 / 機器・人間の信頼性 / 品質管理 / 極限環境 / 電子デバイス・集積回路 / 電子デバイス / 極限環境エレクトロニクス / シリコンカーバイド半導体 / 半導体検出器 / 低酸素社会 / 疑似直接検出 / 窒化ガリウム / イメージングセンサー / III族窒化物 / III族窒化物半導体 / BGaN / イメージセンサー / 中性子検出 / ワイドバンドギャップ半導体 / 高温 / SiC / 金属酸化物 / 原子スイッチ / 極限半導体デバイス / リスク評価 / 低炭素社会 / 高温動作集積回路 / 耐放射線集積回路 / 耐放射線デバイス / 高温動作 / 電子デバイス・電子機器 / 廃炉技術 / 耐高温動作 / MOSFET / シリコンカーバイド / 低質量ダークマター / ダークマター / 低雑音集積回路 / ワイドギャップ半導体 / 軽い暗黒物質 / 暗黒物質 Less
  • Research Projects

    (12 results)
  • Research Products

    (61 results)
  • Co-Researchers

    (17 People)
  •  放射線誘起電流によるSiC半導体の偶発破壊素過程の実験的解明Principal Investigator

    • Principal Investigator
      牧野 高紘
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 29030:Applied condensed matter physics-related
    • Research Institution
      National Institutes for Quantum Science and Technology
  •  原子スイッチによる極限環境用デジタル回路の実現

    • Principal Investigator
      武山 昭憲
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 31010:Nuclear engineering-related
    • Research Institution
      National Institutes for Quantum Science and Technology
  •  Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers

    • Principal Investigator
      黒木 伸一郎
    • Project Period (FY)
      2024 – 2028
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section C
    • Research Institution
      Hiroshima University
  •  Development of ultra-high resolution neutron imaging by quasi-direct detection using BGaN detector

    • Principal Investigator
      中野 貴之
    • Project Period (FY)
      2023 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 14:Plasma science and related fields
    • Research Institution
      Shizuoka University
  •  放射線を当てずに放射線ソフトエラー信頼性を評価する技術

    • Principal Investigator
      小林 大輔
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Japan Aerospace EXploration Agency
  •  Research on Silicon-Carbide IoT Platform for Harsh Environment Applications

    • Principal Investigator
      Kuroki Shin-Ichiro
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Hiroshima University
  •  Soft-Error Screening for Low-Cost High-Reliability LSI Development

    • Principal Investigator
      Kobayashi Daisuke
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Japan Aerospace EXploration Agency
  •  Study of ion induced charge collection process in SiC MOSFETsPrincipal Investigator

    • Principal Investigator
      MAKINO Takahiro
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      General applied physics
    • Research Institution
      National Institutes for Quantum and Radiological Science and Technology
  •  Research on Silicon Carbide Harsh Environment Electronics

    • Principal Investigator
      Kuroki Shin-Ichiro
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hiroshima University
  •  Single Event Burnout Mechanisms in SiC devicesPrincipal Investigator

    • Principal Investigator
      Makino Takahiro
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      General applied physics
    • Research Institution
      Japan Atomic Energy Agency
  •  Development of wide gap semiconductor pixel detector for light dark matter search

    • Principal Investigator
      Tanaka Manobu
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Particle/Nuclear/Cosmic ray/Astro physics
    • Research Institution
      High Energy Accelerator Research Organization
  •  Estimation of Single Event Transient Pulses in Logic Cells from a Single TransistorPrincipal Investigator

    • Principal Investigator
      MAKINO Takahiro
    • Project Period (FY)
      2010 – 2011
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Applied physics, general
    • Research Institution
      Japan Atomic Energy Agency

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2013 2011 2010 Other

All Journal Article Presentation

  • [Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022

    • Author(s)
      Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima
    • Journal Title

      Journal of Applied Physics

      Volume: 131 Issue: 24 Pages: 244503-244503

    • DOI

      10.1063/5.0095841

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Journal Article] An SRAM SEU cross section curve physics model2022

    • Author(s)
      D. Kobayashi, K. Hirose, K. Sakamoto, Y. Tsuchiya, S. Okamoto, S. Baba, H. Shindou, O. Kawasaki, T. Makino, and T. Ohshima
    • Journal Title

      IEEE Transactions on Nuclear Science

      Volume: 69 Issue: 3 Pages: 232-240

    • DOI

      10.1109/tns.2021.3129185

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20H02217
  • [Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019

    • Author(s)
      Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Akinori Takeyama, Takeshi Ohshima and Shin-Ichiro Kuroki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 8 Pages: 081007-081007

    • DOI

      10.7567/1347-4065/ab2dab

    • NAID

      210000156569

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019

    • Author(s)
      Tomoyasu Ishii, Shin-Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 613-616

    • DOI

      10.4028/www.scientific.net/msf.963.613

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019

    • Author(s)
      Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 726-729

    • DOI

      10.4028/www.scientific.net/msf.963.726

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019

    • Author(s)
      Jun Inoue, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 837-840

    • DOI

      10.4028/www.scientific.net/msf.963.837

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018

    • Author(s)
      T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M.Ostling, and C.-M. Zetterling
    • Journal Title

      Mat. Sci. Forum

      Volume: 924 Pages: 971-974

    • DOI

      10.4028/www.scientific.net/msf.924.971

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018

    • Author(s)
      J. Kajihara, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Journal Title

      Mat. Sci. Forum

      Volume: 924 Pages: 423-427

    • DOI

      10.4028/www.scientific.net/msf.924.423

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017

    • Author(s)
      S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Journal Title

      Mat. Sci. Forum

      Volume: 897 Pages: 669-672

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2016

    • Author(s)
      T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
    • Journal Title

      Mater. Sci. Forum

      Volume: 印刷中

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015

    • Author(s)
      Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
    • Journal Title

      Material Science Forum

      Volume: 821-823 Pages: 575-578

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015

    • Author(s)
      T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida, and T. Ohshima
    • Journal Title

      Mater. Sci. Forum

      Volume: 821-823 Pages: 575-578

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes2013

    • Author(s)
      Takahiro Makino, Manato Deki, Naoya Iwamoto, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Toshio Hirao, and Takeshi Ohshima
    • Journal Title

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE

      Volume: 60 Pages: 2647-2650

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2011

    • Author(s)
      T.Makino, et al.
    • Journal Title

      Proceedings of The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications

      Pages: 169-172

    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] 耐環境性向上を目指した低 B 組成 BGaN 中性子検出器の作製と評価2024

    • Author(s)
      工藤涼兵、櫻井辰大、小久保瑛斗、川崎晟也、都木克之、西澤潤一、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00099
  • [Presentation] 過酷環境下での動作を目指した BGaN ダイオードの作製と諸特性評価2023

    • Author(s)
      工藤涼兵、櫻井辰大、川崎晟也、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00099
  • [Presentation] 高ドーズ中性子照射場における BGaN 検出器の放射線検出特性評価2023

    • Author(s)
      櫻井辰大、工藤涼兵、川崎晟也、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H00099
  • [Presentation] Development of BGaN diodes with high radiation tolerance for nuclear instrumentation system2023

    • Author(s)
      Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
    • Organizer
      International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00099
  • [Presentation] Fabrication and characterization of BGaN diodes for nuclear instrumentation system2023

    • Author(s)
      Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
    • Organizer
      he 14th International Conference on Nitride Semiconductors (ICNS-14)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00099
  • [Presentation] SiC CMOS Integrated Circuits and Image Sensors for Extreme Environment Applications2023

    • Author(s)
      Shin-Ichiro Kuroki, Toya Kai, Masayuki Tsutsumi, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima
    • Organizer
      7th IEEE Electron Devices Technology and Manufacturing (IEEE EDTM2023)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] Fabrication and characterization of BGaN diodes for nuclear instrumentation system2023

    • Author(s)
      Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
    • Organizer
      Inter-Academia 2023 (iA2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H00099
  • [Presentation] SiC半導体による極限環境エレクトロニクス構築2022

    • Author(s)
      黒木 伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
    • Organizer
      2022年電子情報通信学会総合大会 シンポジウム「極限環境で動作する集積回路」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022

    • Author(s)
      黒木伸一郎, 志摩 拓真, 目黒 達也, Vuong Van Cuong, 武山 昭憲, 牧野 高紘, 大島 武, 児島 一聡, 田中 保宣
    • Organizer
      電気学会 電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用(第2期)」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] 高線量ガンマ線照射した 4H-SiC JFET のしきい値電圧安定性2022

    • Author(s)
      武山 昭憲, 牧野 高紘, 田中 保宣, 黒木 伸一郎, 大島 武
    • Organizer
      応用物理学会 先進パワー半導体分科会第 9回講演会
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] SiC 耐放射線イメージセンサの研究開発2021

    • Author(s)
      黒木 伸一郎, 目黒 達也, 西垣内 健汰, 武山 昭憲, 牧野 高紘, 大島 武,田中 保宣
    • Organizer
      公益社団法人 応用物理学会 先進パワー半導体分科会 第 19 回研究会 「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] An SRAM SEU cross section curve physics model2021

    • Author(s)
      D. Kobayashi, K. Hirose, K. Sakamoto, Y Tsuchiya, S. Okamoto, S. Baba, H. Shindou, O. Kawasaki, T. Makino, and T. Ohshima
    • Organizer
      IEEE Nuclear and Space Radiation Effects Conference (NSREC)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02217
  • [Presentation] 耐放射線性炭化ケイ素半導体デバイスの開発2021

    • Author(s)
      大島 武, 武山 昭憲、牧野 高紘、黒木 伸一郎、田中 保宣
    • Organizer
      2021年第82回応用物理学会秋季学術講演会 シンポジウム 「福島第1原発廃炉と福島復興 -応用物理学会の会員として,私たちに何ができるか- 」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] SiC 耐放射線イメージセンサの研究開発2021

    • Author(s)
      黒木伸一郎, 目黒達也,西垣内健汰,武山昭憲,牧野高紘,大島武,田中保宣
    • Organizer
      応用物理学会・先進パワー半導体分科会 第19回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] シリコンカーバイド(SiC)極限環境エレクトロニクスの研究開発:原子炉廃炉対応から医療応用まで2021

    • Author(s)
      黒木 伸一郎, 目黒 達也, Vuong Van Cuong, 武山 昭憲, 牧野 高紘, 大島 武,田中 保宣
    • Organizer
      文部科学省 共同利用・共同研究拠点 生体医歯工学共同研究拠点 令和2年度成果報告会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020

    • Author(s)
      武山 昭憲,清水 奎吾, 牧野 高紘, 山崎 雄一, 大島 武, 黒木 伸一郎, 田中 保宣
    • Organizer
      公益社団法人 応用物理学会 先進パワー半導体分科会 第 7回講演会
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] 4H-SiC 短チャネル n/p MOSFETs における閾値の評価2020

    • Author(s)
      志摩 拓真,前田 智徳 ,石川 誠治,瀬崎 洋,牧野 高紘, 大島 武, 黒木 伸一郎
    • Organizer
      公益社団法人 応用物理学会 先進パワー半導体分科会 第 7回講演会
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] Radiation hardness of 4H-SiC JFETs in MGy dose ranges,” The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)2019

    • Author(s)
      A. Takeyama, K. Shimizu, T. Makino, Y. Yamazaki, S. Kuroki, Y. Tanaka, T. Ohshima
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] SiC-NMOSFETs におけるガンマ線誘起移動度増加現象とその増加機構2019

    • Author(s)
      村岡幸輔,瀬崎洋,石川誠治,前田知徳,牧野高紘,大島武,黒木伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] ノーマリーオフ型 4H-SiC JFET のガンマ線耐性2019

    • Author(s)
      武山 昭憲,清水 奎吾,牧野 高紘,山﨑 雄一,大島 武,黒木 伸一郎,田中 保宣
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 短チャネル SiC nMOSFET の温度特性評価2019

    • Author(s)
      石井友康,瀬崎洋,石川誠治,前田智徳,牧野高紘,大島武, 黒木伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] ノーマリーオフ型4H-SiC JFETのガンマ線照射効果2019

    • Author(s)
      武山 昭憲、清水 奎吾、牧野 高紘、山﨑 雄一、大島 武、黒木 伸一郎、田中 保宣
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] SiC による耐放射線エレクトロニクス技術開発2019

    • Author(s)
      田中 保宣,清水 奎吾,小野田 忍,武山 昭憲,牧野 高紘,大島 武, 目黒 達也,黒木 伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価2019

    • Author(s)
      牧野 高紘
    • Organizer
      先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2018

    • Author(s)
      T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Radiation Hardened Silicon Carbide Electronics2018

    • Author(s)
      K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, T. Makino, T. Ohshima, S.-I. Kuroki
    • Organizer
      Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Short-channel 4H-SiC trench MOSFETs for harsh environment electronics2018

    • Author(s)
      T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs2018

    • Author(s)
      Takahiro Makino, Shuhei Takano, Shinsuke Harada, Yasuto Hijikata, and Takeshi Ohshima
    • Organizer
      IEEE Nuclear and Space Radiation Effects Conference 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs2018

    • Author(s)
      Shin-Ichiro Kuroki, Kohei Nagano, Tatsuya Meguro, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, and Yasunori Tanaka
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2018

    • Author(s)
      Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC Trench MOSFETs による短チャネル効果の抑制効果2018

    • Author(s)
      石井 友康、黒木 伸一郎、瀬崎 洋、石川 誠治、前田 智徳、牧野 高紘、大島 武、Mikael Ostling 、Carl-Mikael Zetterling
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2018

    • Author(s)
      J. Inoue, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T Ohshima, M. Ostling, and C-M. Zetterling
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017

    • Author(s)
      J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 高周波CMOSインバータに向けた4H-SiCトレンチpMOSFETsの研究2017

    • Author(s)
      井上 純、黒木 伸一郎、石川 誠治、前田 知徳、瀬崎 洋、牧野 高紘、大島 武、Mikael Ostling、Carl-Mikael Zetterling
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2017

    • Author(s)
      Vuong Van Cuong, Milantha De Silva, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
    • Organizer
      応用物理学会 先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Ba導入nMOSFETsに対するBTS試験およびガンマ線照射2017

    • Author(s)
      村岡幸輔,瀬崎洋,石川誠治,前田知徳,牧野高紘,大島武,黒木伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017

    • Author(s)
      T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017

    • Author(s)
      黒瀬 達也、黒木 伸一郎、石川 誠治、前田 知徳、瀬崎 洋、牧野 高紘、大島 武、Mikael Ostling、Carl-Mikael Zetterling
    • Organizer
      2017年第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017

    • Author(s)
      梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治,前田知徳, 牧野高紘, 大島武, Mikael Ostling, and Carl-Mikael Zetterling
    • Organizer
      応用物理学会 先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性2017

    • Author(s)
      高野修平、牧野 高紘、原田 信介、児島 一聡、土方 泰斗、大島 武
    • Organizer
      第78回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] NbNiシリサイドS/D 3C-SiC nMOSFETsと高ガンマ線照射特性2017

    • Author(s)
      永野 耕平、目黒 達也、武山 昭憲、牧野 高紘、大島 武、田中 保宣、黒木 伸一郎
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] トレンチゲート型SiC-MOSFETにおける放射線誘起破壊現象の物理過程探索と耐性評価2017

    • Author(s)
      高野 修平, 牧野 高紘, 原田 信介, 土方 泰斗, 大島 武
    • Organizer
      先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2015

    • Author(s)
      T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
    • Organizer
      16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015)
    • Place of Presentation
      Giardini Naxos, Italy
    • Year and Date
      2015-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010

    • Author(s)
      T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda and K. Hirose
    • Organizer
      The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA)
    • Place of Presentation
      Takasaki
    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] Digital Single Event Transient Pulse-Widths estimation in Logic Cells from Heavy-Ion-Induced Transient Currents in a Single MOSFET2010

    • Author(s)
      T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda, and K. Hirose
    • Organizer
      IEEE Nuclear and space radiation effects conference
    • Place of Presentation
      Denver
    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010

    • Author(s)
      T.Makino, et al.
    • Organizer
      The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications (RASEDA-9)
    • Place of Presentation
      高崎市 高崎シティギャラリー
    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

    • Author(s)
      Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
    • Organizer
      European Conference on Silicon Carbide & Related Materials
    • Place of Presentation
      World Trade Center, Grenoble, France
    • Year and Date
      2014-09-21 – 2014-09-25
    • Data Source
      KAKENHI-PROJECT-25790076
  • 1.  OHSHIMA Takeshi (50354949)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 39 results
  • 2.  Kuroki Shin-Ichiro (70400281)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 39 results
  • 3.  武山 昭憲 (50370424)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 10 results
  • 4.  Kobayashi Daisuke (90415894)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 2 results
  • 5.  田中 保宣 (20357453)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 6.  児島 一聡 (40371041)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 2 results
  • 7.  Tanaka Manobu (00222117)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  KANEKO Junichi (90333624)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  SHIMAOKA Takehiro (80650241)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  MIUCHI Kentaro (80362440)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  竹内 浩造 (00870255)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  坂本 敬太 (60867985)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  坂口 将尊 (70626796)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  中野 貴之 (00435827)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 15.  青木 徹 (10283350)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 16.  本田 善央 (60362274)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 17.  若林 源一郎 (90311852)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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