Wakabayashi Hitoshi 若林整

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WAKABAYASHI Hitoshi 若林整

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Researcher Number	80700153
Other IDs	https://orcid.org/0000-0001-5509-521X
Affiliation (Current)	2022: 東京工業大学, 工学院, 教授
Affiliation (based on the past Project Information) *help	2016 – 2022: 東京工業大学, 工学院, 教授 2013 – 2015: 東京工業大学, 総合理工学研究科(研究院), 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Science and Engineering / Transformative Research Areas, Section (II) / Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator 遷移金属ダイカルコゲナイド / 二硫化モリブデン / MISFET / 電子デバイス・集積回路 / スパッタ / 第一原理計算 / 2次元層状半導体 / ドーピング / 2次元層状半導体膜 / 3次元成長 … More / 2次元成長 / 核形成 / スパッタ法 / 2D FET / 3D構造 / MoS2 / Nano-wire / FinFET / 自己発熱効果 / Nanowire / p/n vertical integration / Self-heating effect / Multi-input NOR / P/n vertical integration / 半導体 / ナノワイヤ … More Except Principal Investigator 半導体 / 不純物ドーピング / 界面制御 / 光電子ホログラフィー / 不純物 / シリコン(Si) / ヒ素(As) / 二硫化モリブデン(MoS2) / 原子配列構造 / 電気的活性化 / 原子ホログラフィー / 電子状態 / 層状物質 / 光電子回折 / シリコン（Si） / ヒ素（As） / 二硫化モリブデン（MoS2） / 電気・電子材料 / 半導体物性 / シリコン / 砒素 / 二硫化モリブデン / 硫化モリブデン / 半導体の不純物 / 活性サイト / 半導体デバイス / ボロン / ゼオライト / 蓄電池材料 / ガラス / 半導体材料 / 熱電変換 / 遷移金属ダイカルコゲナイド / ファンデルワールス層状材料 / 透過電子顕微鏡 / ラマン分光 Less

Growth mechanism and thermoelectric conversion property of transition metal dichalcogenides thin films
- Principal Investigator
  
  冨谷茂隆
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo Institute of Technology
社会実装に向けた超秩序構造物質ライブラリーに基づく合成プロセス開発
- Principal Investigator
  
  脇原徹
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  The University of Tokyo
Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAMPrincipal Investigator
- Principal Investigator
  
  Hitoshi Wakabayashi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Challenge to fabricate 3D structure of atomically thin TMDC film for future 2D-MISFETPrincipal Investigator
- Principal Investigator
  
  Wakabayashi Hitoshi
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Basic research of high-mobility transistor with layered MoS2 channelPrincipal Investigator
- Principal Investigator
  
  WAKABAYASHI Hitoshi
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology

All 2021 2020 2019 2018 2017 2016 2015 2014 Other

All Journal Article Presentation

[Journal Article] Hitoshi Wakabayashi Laboratory, Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Tokyo Tech)2021
- Author(s)
  若林整
- Journal Title
  
  Erekutoronikusu Jisso Gakkaishi
  
  Volume: 24 Issue: 1 Pages: 162-162
- DOI
  10.5104/jiep.24.162
- NAID
  130007965242
- ISSN
  1343-9677, 1884-121X
- Language
  Japanese
- Open Access
- Data Source
  KAKENHI-PROJECT-18K04258
[Journal Article] Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node2020
- Author(s)
  Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59
- DOI
  10.35848/1347-4065/ab6d83
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04258
[Journal Article] Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout2019
- Author(s)
  Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  IEEE, Journal of Electron Device Society
  
  Volume: 6 Pages: 1239-1245
- DOI
  10.1109/jeds.2018.2882406
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04258
[Journal Article] Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing2019
- Author(s)
  Shimizu Jun'ichi、Ohashi Takumi、Matsuura Kentaro、Muneta Iriya、Kuniyuki Kakushima、Tsutsui Kazuo、Ikarashi Nobuyuki、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 7 Pages: 2-6
- DOI
  10.1109/jeds.2018.2854633
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration2018
- Author(s)
  Matsuura Kentaro、Shimizu Jun'Ichi、Toyama Mayato、Ohashi Takumi、Muneta Iriya、Ishihara Seiya、Kakushima Kuniyuki、Tsutsui Kazuo、Ogura Atsushi、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 1246-1252
- DOI
  10.1109/jeds.2018.2883133
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization2018
- Author(s)
  K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, and H. Wakabayashi
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: － Pages: 3497-3501
- DOI
  10.1007/s11664-018-6191-z
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16J11377, KAKENHI-PLANNED-26105014
[Journal Article] Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing2018
- Author(s)
 Toyama Mayato、Ohashi Takumi、Matsuura Kentaro、Shimizu Jun’ichi、Muneta Iriya、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 57 Issue: 7S2 Pages: 07MA04-07MA04
- DOI
 10.7567/jjap.57.07ma04
- NAID
 210000149377
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography2017
- Author(s)
  Tsutsui Kazuo、Matsushita Tomohiro、Natori Kotaro、Muro Takayuki、Morikawa Yoshitada、Hoshii Takuya、Kakushima Kuniyuki、Wakabayashi Hitoshi、Hayashi Kouichi、Matsui Fumihiko、Kinoshita Toyohiko
- Journal Title
  
  Nano Lett.
  
  Volume: 17 Pages: 7533-7538
- DOI
  10.1021/acs.nanolett.7b03467
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105007, KAKENHI-PLANNED-26105013, KAKENHI-PLANNED-26105014, KAKENHI-PROJECT-15KK0167, KAKENHI-PLANNED-26105010, KAKENHI-PROJECT-17H02911
[Journal Article] Quantitative analysis of sputter-deposited MoS2 properties on SiO2 substrate roughness2017
- Author(s)
  Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Journal Title
  
  Applied Physics Express (APEX)
  
  Volume: 10
- Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness2017
- Author(s)
 Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Journal Title
 
 Applied Physics Express
 
 Volume: 10 Issue: 4 Pages: 041202-041202
- DOI
 10.7567/apex.10.041202
- NAID
 210000135806
- ISSN
 1882-0778, 1882-0786
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-16J11377, KAKENHI-PLANNED-26105014
[Journal Article] La2O3 gate dielectrics for AlGaN/GaN HEMT2016
- Author(s)
  J. Chen, T. Kawanago, H. Wakabayashi, K. Tsutsui, H. Iwai, D. Nohata, H. Nohira, K. Kakushima
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 60 Pages: 16-19
- DOI
  10.1016/j.microrel.2016.02.004
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors2016
- Author(s)
  Y. Takei, K. Tsutsui, W. Saito, K. Kakushima, H. Wakabayashi, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55-4 Issue: 4 Pages: 040306-040306
- DOI
  10.7567/jjap.55.040306
- NAID
  210000146222
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs2015
- Author(s)
 Takumi Ohashi, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura and Hitoshi Wakabayashi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 54 Issue: 4S Pages: 04DN08-04DN08
- DOI
 10.7567/jjap.54.04dn08
- NAID
 210000145087
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-25889022, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers2015
- Author(s)
  Y. Takei, M. Kamiya, K. Tsutsui, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai
- Journal Title
  
  Physica Status Solidi A
  
  Volume: -
- DOI
  10.1002/pssa.201431645
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures2014
- Author(s)
  Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka H. Iwai
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Pages: 265-270
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 将来の Natural Human I/F デバイスの実現に向けた実装技術2021
- Author(s)
  若林整
- Organizer
  実装フェスタ関西 2020
- Invited
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET2019
- Author(s)
  T. Yamagishi, A. Hori, I. Muneta, K. Kakushima, K. Tsutsui, and H. Wakabayashi
- Organizer
  N-1-02, pp. 557-558, Solid State Devices and Materials, Japan Society of Applied Physics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング2019
- Author(s)
  筒井一生、松下智裕、名取鼓太朗、小川達博、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing2019
- Author(s)
  Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Current Progress on 2D Materials and their FETs for Future LSIs2019
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  SEMI China, IEEE, CSTIC 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析2019
- Author(s)
  筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs2019
- Author(s)
  松浦賢太朗、清水淳一、外山真矢人、大橋匠、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減2019
- Author(s)
  松浦賢太朗、濱田昌也、坂本拓朗、谷川晴紀、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第66回応用物理学会春期学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計2019
- Author(s)
  山岸朋彦、堀敦、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  2019年第80回応用物理学会秋季学術講演会、18a-B11-4
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] Current Progress on 2D Materials and their FETs for Future LSIs2019
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  IEEE, CSTIC 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング2019
- Author(s)
  筒井一生、松下智裕、名取鼓太朗、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] IoT社会を拓く集積回路向けデバイス技術2018
- Author(s)
  若林整
- Organizer
  芝浦工業大学第5回グリーンイノベーションシンポジウム日の丸半導体ルネサンス ― IoT・パワエレが切り拓く新時代―
- Invited
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減2018
- Author(s)
  坂本拓朗、大橋匠、松浦賢太朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] 絶縁膜を通した硫黄粉末アニールによるスパッタMoS2膜の結晶性改善2018
- Author(s)
  濱田昌也、松浦賢太郎、谷川晴紀、大橋匠、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Advanced Device Technologies beyond FinFET era for Logic Chip2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  SEMI STS
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 総論：Si ULSIの現状と今後の動向2018
- Author(s)
  若林整
- Organizer
  JSPS, 145委員会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ成膜MoS2の酸化により形成される酸化Moの評価2018
- Author(s)
  小林進大、武田さくら、米田允俊、大門寛、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Migration制御したスパッタリング法による2次元層状MoS2成膜2018
- Author(s)
  大橋匠、坂本拓朗、松浦賢太朗、清水淳一、外山真矢人、石原聖也、日比野祐介、宗田伊理也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] Benchmark on Advanced Logic Devices and Predictive Discussion on Future LSIs2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  the 40th anniversary of DPS 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善2018
- Author(s)
  五十嵐智、松浦賢太朗、濱田昌也、谷川晴紀、坂本拓朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] ウィグナー変換による光電子分光スペクトル中の電子格子相互作用情報の抽出2018
- Author(s)
  武田さくら, 米田允俊, 小林進大, 大門寛, 南谷英美, 若林整
- Organizer
  第12回物性科学領域横断研究会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate2018
- Author(s)
  Kentaro Matsuura, Jun’ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Organizer
  2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Advanced 3D-CMOS-Device Benchmark and Sputtered-MoS2 2D-FET Operation2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  22nd International Symposium on Chemical-Mechanical Planarization
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去2018
- Author(s)
  谷川晴紀、松浦賢太朗、濱田昌也、坂本拓朗、宗田伊理也、星井拓也、角嶋邦之、筒井一生、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2 膜のスパッタ合成とトランジスタ応用2018
- Author(s)
  若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] Advanced 3D-CMOS-Device Benchmark and Sputtered-MoS2 2D-FET Operation2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  22nd International Symposium on Chemical-Mechanical Planarization
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Discussion on LSI Configurations and Performances from Process to Upper Levels2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  IEEE ISSM 2019, Tutorial
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography2018
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ成膜MoS2の酸化により形成される酸化Moの評価2018
- Author(s)
  小林進大、武田さくら、米田允、大門寛、若林整
- Organizer
  第２回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2膜のスパッタ合成とトランジスタ応用2018
- Author(s)
  若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Migration制御したスパッタリング法による2次元層状MoS2成膜2018
- Author(s)
  大橋匠、坂本拓朗、松浦賢太朗、清水淳一、外山真矢人、石原聖也、日比野祐介、宗田伊理也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価2018
- Author(s)
  小川達博、名取鼓太郎、星井拓也、仲武昌史、渡辺義夫、永山勉、樋口隆弘、加藤慎一、谷村英昭、角嶋邦之、若林整、筒井一生
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 2D Materialsで広がる世界2018
- Author(s)
  若林整
- Organizer
  日本学術振興会シリコン超集積システム第165委員会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] IEDM 2017参加報告2018
- Author(s)
  若林整
- Organizer
  応用物理学会シリコンテクノロジー分科会SDRJ委員会More Moore (MM) WG 第3回会議
- Invited
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique2018
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, and Toyohiko Kinoshita
- Organizer
  18th Int. Workshop on Junction Technology (IWJT2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] ACTIVE-PERFORMANCE BENCHMARK FOR ADVANCED 3D-CMOS DEVICES2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  CSTIC 2018, Symposium I: Device Engineering And Memory Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] Vertically-Stacked Nanowire/FinFETs and Following 2D FETs for Logic Chips2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  IEEE S3S Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites2018
- Author(s)
  Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, 他12名
- Organizer
  14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 2D Materialsで広がる世界2018
- Author(s)
  若林整
- Organizer
  日本学術振興会シリコン超集積システム第165委員会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film2018
- Author(s)
  M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  IEEE S3S Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Vertically-Stacked Nanowire/FinFETs and Following 2D FETs for Logic Chips2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  IEEE, EDS, S3S 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs2018
- Author(s)
  松浦賢太朗、清水淳一、外山真矢人、大橋匠、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減2018
- Author(s)
  坂本拓朗、大橋匠、松賢太朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Advanced Device Technologies beyond FinFET era for Logic Chip2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  SEMI Japan 2018, STS
- Invited
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy2018
- Author(s)
  T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi H. Wakabayashi
- Organizer
  IEEE S3S Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Benchmark on Advanced Logic Devices and Predictive Discussion on Future LSIs2018
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  The 40th anniversary of DPS 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] 総論：Si ULSIの現状と今後の動向、招待講演2018
- Author(s)
  若林整
- Organizer
  JSPS, 145委員会
- Invited
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] スパッタ堆積MoS2膜の下地材料依存性2017
- Author(s)
  大橋匠、宗田伊理也、石原聖也、日比野祐介、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Si結晶中にドープされたAsの異なる原子配列構造と深さ分布2017
- Author(s)
  小川達博、名取鼓太郎、星井拓也、仲武昌史、渡辺義夫、角嶋邦之、若林整、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] IoT向けスパッタMoS2チャネルMOSFETの研究2017
- Author(s)
  若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ堆積MoS2膜の下地材料依存性2017
- Author(s)
  大橋匠、宗田伊理也、石原聖也、日比野祐介、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性2017
- Author(s)
  外山真矢人、大橋匠、松浦賢太朗、清水淳一、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] SiにドープされたAsの光電子ホログラフィー評価と電気的活性化との関係2017
- Author(s)
  名取鼓太郎、筒井一生、松下智裕、室隆桂之、星井拓也、角嶋邦之、若林整、林好一、松井文彦、森川良忠、下村勝、木下豊彦
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2ターゲット高温スパッタ法のロングスロー化によるMoS2膜結晶性向上2017
- Author(s)
  坂本拓朗、大橋匠、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製2017
- Author(s)
  篠原健朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] IoT向けスパッタMoS2チャネルMOSFETの研究2017
- Author(s)
  若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] AlGaN/GaN HEMT構造におけるドット形凹凸AlGaN層形成によるコンタクト抵抗低減の検討2017
- Author(s)
  渡部拓巳、久永真之祐、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜のMISFET応用2017
- Author(s)
  若林整
- Organizer
  グラフェンコンソーシアム第14回研究講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Crystallinity Improvement using Migration-Enhancement Methods for Sputtered-MoS2 Films2017
- Author(s)
  Shin Hirano, Jun’ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technology and Manufacturing Conference (EDTM) 2017, P-28
- Place of Presentation
  富山国際会議場
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas2017
- Author(s)
  Yasunori Okada, Shimpei Yamaguchi, Takumi Ohashi,Iriya Muneta, Kuniyuki Kasushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Organizer
  The 17th International Workshop on Junction Technology 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Crystallinity Improvement using Migration Enhancement Method for Sputtered-MoS2 Film2017
- Author(s)
  Shin Hirano, Jun’ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technoogy and Manufuctureing Conference (EDTM2017)
- Place of Presentation
  富山国際会議場（富山市）
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technoogy and Manufuctureing Conference (EDTM2017)
- Place of Presentation
  富山国際会議場（富山市）
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Sputtered TMDC 2D Materials and their Electrical Properties2017
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  21st International Symposium on Chemical-Mechanical Planarization
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] スパッタ MoS2 膜の MISFET 応用2017
- Author(s)
  若林整
- Organizer
  グラフェンコンソーシアム第14回研究講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] スパッタMoS2膜上ALD-Al2O3膜の成長過程観察2017
- Author(s)
  谷川晴紀、大橋匠、松浦賢太朗、清水淳一、外山真矢人、早川直希、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] トンネル電極を形成したスパッタMoS2膜における電流の障壁膜厚依存性2017
- Author(s)
  早川直希、宗田伊理也、大橋匠、松浦賢太朗、清水淳一、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Transmission electron microscopy structural analysis of sputtered MoS2 for 3D-LSI2017
- Author(s)
  Yuuta Suzuki, Jun'ichi Shimizu, Iriya Muneta, Masahiro Nagao, Hitoshi Wakabayashi, and Nobuyuki Ikarashi
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing2017
- Author(s)
  M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, and H. Wakabayashi
- Organizer
  Advanced Metallization Conference 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography2017
- Author(s)
  Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui
- Organizer
  11th International Symposium on Atomic Level Characterizations for New Materials and Devices ’17
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2ターゲット高温スパッタ法のロングスロー化によるMoS2膜結晶性向上2017
- Author(s)
  坂本拓朗、大橋匠、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K14247
[Presentation] IoTのセンサ～通信～ビッグデータ処理過程を支えるデバイス・周辺技術2016
- Author(s)
  若林　整
- Organizer
  日本学術振興会半導体界面制御技術第154委員会第8回講習会
- Place of Presentation
  東京大学（東京）
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] SiにドープされたAsの光電子ホログラフィーによる評価2016
- Author(s)
  名取鼓太郎、筒井一生、松下智裕、室隆桂之、木下豊彦、星井拓也、角嶋邦之、若林整、松井文彦、下村勝
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2のデバイス応用2016
- Author(s)
  若林　整
- Organizer
  物性研究所短期研究会「原子層上の活性サイトで発現する局所機能物性」
- Place of Presentation
  東京大学物性研究所（柏市）
- Year and Date
  2016-12-20
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] CMOS-Device Benchmark and Sputtered MoS2 Film for Monolithic Transistor2016
- Author(s)
  H. Wakabayashi
- Organizer
  20th International Symposium on Chemical-Mechanical Planarization
- Place of Presentation
  Lake Placid, NY, USA
- Year and Date
  2016-08-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] デバイス高性能化に向けたSi中ドーパントサイトの研究2016
- Author(s)
  筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  物性研究所短期研究会「原子層上の活性サイトで発現する局所機能物性」
- Place of Presentation
  東京大学物性研究所（柏市）
- Year and Date
  2016-12-20
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film2016
- Author(s)
  K. Matsuura, T. Ohashi, I. Muneta S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura and H. Wakabayashi
- Organizer
  47th IEEE Semiconductor Interface Specialists Conference (SISC2016)
- Place of Presentation
  San Diego, USA
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] TFT応用に向けたRFマグネトロンスパッタリング法によるMoS2膜の形成2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野裕介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会
- Place of Presentation
  キャンパス・イノベーションセンター（東京）
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming- Gas Annealing for 3D-IC2016
- Author(s)
  J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials (SSDM2016)
- Place of Presentation
  つくば国際会議場（つくば市）
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子ホログラフィーによる Si 中ドーパントサイトの研究2016
- Author(s)
  筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  第10回物性科学領域横断研究会
- Place of Presentation
  神戸大学（神戸市）
- Year and Date
  2016-12-09
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜のフォーミングガス雰囲気ポストアニーリングによる電気特性向上2016
- Author(s)
  清水淳一、大橋匠、松浦賢太朗、角嶋邦之、筒井一生、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果のメカニズム解明2016
- Author(s)
  武井優典、下田智裕、高橋昌靖、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] S/Mo比増加によるMoS2膜の低キャリア濃度化2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野祐介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Two dimensional material device technologies2015
- Author(s)
  H. Wakabayashi
- Organizer
  IEEE EDS Mini-Colloquium: WIMNACT 45
- Place of Presentation
  東京工業大学（神奈川県）
- Year and Date
  2015-02-19
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果の凹凸構造サイズ依存性2015
- Author(s)
  下田智裕、武井優典、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns2015
- Author(s)
  Yusuke Takei, Tomohiro Shimoda, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai
- Organizer
  2015 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 硫黄粉末アニールの減圧化によるスパッタMoS2薄膜の結晶性向上2015
- Author(s)
  松浦賢太朗、大橋匠、石原聖也、澤本直美、日比野祐介、須田耕平、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Two dimensional material device technologies2015
- Author(s)
  H. Wakabayashi
- Organizer
  IEEE EDS Mini-Colloquium: WIMNACT 45
- Place of Presentation
  東京工業大学
- Year and Date
  2015-02-19
- Invited
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Advanced CMOS Device Technologies Discussed Also with Transition-Metal Di-Chalcogenide (TMDC) Channel2015
- Author(s)
  H. Wakabayashi
- Organizer
  228th the Electrochemical Society (ECS) meeting 2015
- Place of Presentation
  Phoenix, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Advanced-CMOS Device Benchmarks and following Transition-Metal Dichalcogenides (TMDs) for 2D FETs2014
- Author(s)
  H. Wakabayashi
- Organizer
  QNERC Workshop on Nano Devices and Materials
- Place of Presentation
  東京工業大学
- Year and Date
  2014-11-04
- Invited
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Progress and Benchmarking of CMOS-Device Technologie2014
- Author(s)
  H. Wakabayashi
- Organizer
  International Conference on Electronics Packaging
- Place of Presentation
  富山国際会議場
- Year and Date
  2014-04-24
- Invited
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Advanced-CMOS Device Benchmarks and following Transition-Metal Dichalcogenides (TMDs) for 2D FETs2014
- Author(s)
  H. Wakabayashi
- Organizer
  QNERC Workshop on Nano Devices and Materials
- Place of Presentation
  （東京都）
- Year and Date
  2014-11-04
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Progress and Benchmarking of CMOS-Device Technologies2014
- Author(s)
  Hitoshi Wakabayashi
- Organizer
  International Conference on Electronics Packaging 2014
- Place of Presentation
  富山
- Invited
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Advanced Scaling and Wiring Technology2014
- Author(s)
  H. Wakabayashi
- Organizer
  ADMETA Plus 2014
- Place of Presentation
  東京大学
- Year and Date
  2014-10-22
- Invited
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices2014
- Author(s)
  T. Ohashi, Hitoshi Wakabayashi, et. al
- Organizer
  Thailand-Japan International Academic Conference
- Place of Presentation
  東京大学
- Year and Date
  2014-11-22
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Multi-Layered MoS2 Thin Film Formed by High- Temperature Sputtering for Enhancement-Mode nMOSFETs2014
- Author(s)
  T. Ohashi, H. Wakabayashi, et. al.
- Organizer
  Solid State Device and Materials, 2014
- Place of Presentation
  エポカルつくば
- Year and Date
  2014-09-11
- Data Source
  KAKENHI-PROJECT-25889022
[Presentation] Advanced Scaling and Wiring Technology
- Author(s)
  H. Wakabayashi
- Organizer
  Advanced Metallization Conference (ADMETA Plus 2014)
- Place of Presentation
  東京大学（東京都）
- Year and Date
  2014-10-22 – 2014-10-24
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 金属ゲート電極材料のAlGaN/GaN HEMT のリーク電流への影響
- Author(s)
  大賀一樹、川那子高暢、角嶋邦之、片岡好則、西山彰、杉井信之、若林整、筒井一生、名取研二、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 高温スパッタリング法によるMoS2膜の形成と電気特性
- Author(s)
  松浦賢太朗，大橋匠，山口晋平，須田耕平，石原聖也，澤本直美，角嶋邦之，杉井信之，西山彰，片岡好則，名取研二，筒井一生，岩井洋，小椋厚志，若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT構造への凹凸AlGaN層導入によるコンタクト抵抗の低減
- Author(s)
  武井優典、下田智裕、筒井一生、齋藤渉、角嶋邦之、若林整、片岡好則、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 硬Ｘ線光電子分光を用いた金属/AlGaN/GaN のバンド構造の解析
- Author(s)
  大賀一樹，陳江寧，川那子高暢，角嶋邦之，野平博司，片岡好則，西山彰，杉井信之，若林整，筒井一生，名取研二，岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT 構造のAlGaN層内部の電子トラップ解析
- Author(s)
  馬場俊之、永久雄一、川那子高暢、角嶋邦之、片岡好則、西山彰、杉井信之、若林整、筒井一生、名取研二、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN系2次元電子ガスへのノンアロイコンタクトにおけるコンタクト抵抗のAlGaN層厚依存性による抵抗成分分析
- Author(s)
  武井優典，岡本真里，シンマン，萱沼玲，下田智裕，三井陽平，齋藤渉，筒井一生，角嶋邦之，若林整，片岡好則，岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ堆積MoS2膜の下地平坦化による電気特性向上
- Author(s)
  大橋匠、山口晋平、松浦賢太朗、須田耕平、石原聖也、澤本直美、角嶋邦之、杉井信之、西山彰、片岡好則、名取研二、筒井一生、岩井洋、小椋厚志、若林整
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure
- Author(s)
  M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito
- Organizer
  IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2014)
- Place of Presentation
  Knoxville, Tennessee, USA
- Year and Date
  2014-10-13 – 2014-10-15
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 大面積MoS2膜形成に向けたMoの硫化プロセスの検討
- Author(s)
  松浦賢太朗、大橋匠、山口晋平、須田耕平、石原聖也、澤本直美、角嶋邦之、杉井信之、西山彰、片岡好則、名取研二、筒井一生、岩井洋、小椋厚志、若林整
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 高温スパッタリング法におけるMoS2薄膜化と電気特性
- Author(s)
  大橋匠，山口晋平，松浦賢太朗，須田耕平，石原聖也，澤本直美，角嶋邦之，杉井信之，西山彰，片岡好則，名取研二，筒井一生，岩井洋，小椋厚志，若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers
- Author(s)
  Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, and Hiroshi Iwai
- Organizer
  The International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Multi-Layered MoS2 Thin Film Formed by High- Temperature Sputtering for Enhancement-Mode nMOSFETs
- Author(s)
  T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura and H. Wakabayashi
- Organizer
  Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  つくば国際会議場（茨城県）
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PLANNED-26105014

1. Tsutsui Kazuo (60188589)

# of Collaborated Projects: 1 results

# of Collaborated Products: 70 results
2. 武田さくら (30314537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. 角嶋邦之 (50401568)

# of Collaborated Projects: 1 results

# of Collaborated Products: 69 results
4. 宗田伊理也 (90750018)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
5. 脇原徹 (70377109)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 増野敦信 (00378879)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 北村尚斗 (10453812)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 小野円佳 (20865224)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 伊與木健太 (50782174)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 冨谷茂隆 (40867016)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. Sato Shintaro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. Mori Daisuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
13. Hoshii Takuya

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
14. Iwai Hiroshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 21 results
15. Kawamura Tomoaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. MORIKAWA Yoshitada

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. MATSUI Fumihiko

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
18. MURO Takayuki

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
19. 若林裕助

# of Collaborated Projects: 0 results

# of Collaborated Products: 7 results
20. 林好一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
21. 松下智裕

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
22. 木下豊彦

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Wakabayashi Hitoshi 若林 整

WAKABAYASHI Hitoshi 若林 整

Research Projects

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Co-Researchers

Growth mechanism and thermoelectric conversion property of transition metal dichalcogenides thin films

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社会実装に向けた超秩序構造物質ライブラリーに基づく合成プロセス開発

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Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAMPrincipal Investigator

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Challenge to fabricate 3D structure of atomically thin TMDC film for future 2D-MISFETPrincipal Investigator

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Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices

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Basic research of high-mobility transistor with layered MoS2 channelPrincipal Investigator

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[Journal Article] Hitoshi Wakabayashi Laboratory, Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Tokyo Tech)2021

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[Journal Article] Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node2020

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[Journal Article] Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout2019

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[Journal Article] Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing2019

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[Journal Article] Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration2018

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[Journal Article] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization2018

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[Journal Article] Ohmic contact between titanium and sputtered MoS<sub>2</sub> films achieved by forming-gas annealing2018

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Wakabayashi Hitoshi 若林整

WAKABAYASHI Hitoshi 若林整