WU Yan 呉研

Researcher Number	80736455
Other IDs
Affiliation (based on the past Project Information) *help	2016 – 2017: 日本大学, 理工学部, 助手
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator TFET / 重イオン照射 / SOI構造 / 寄生バイポーラ効果 / ソフトエラー / Single event effect / SOI / Parasitic bipolar effect

Heavy-ion induced current in Tunnel FETPrincipal Investigator
- Principal Investigator
  
  WU Yan
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nihon University

All 2017

All Journal Article Presentation

[Journal Article] 微細SOIデバイスの重イオン照射誘起寄生バイポーラ効果抑制2017
- Author(s)
  和田雄友、呉研、高橋芳浩
- Journal Title
  
  日本信頼性学会誌
  
  Volume: 39 Pages: 145-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18094
[Presentation] The Impact of Tunnel FET on Heavy Ion Induced Transient Effect2017
- Author(s)
  Yan Wu
- Organizer
  232nd ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18094
[Presentation] トンネルFET ベースCMOS回路のシングルイベント耐性2017
- Author(s)
  呉研
- Organizer
  第64回　応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜神奈川県　横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K18094
[Presentation] Formation of Magnesium Silicide for Source Material in Si based Tunnel FET by Annealing of Mg/Si Thin Film Multi-Stacks2017
- Author(s)
  Yan Wu
- Organizer
  IWJT　2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18094
[Presentation] LDD構造を用いたトンネルFET ベースCMOS回路においての耐放射線性評価2017
- Author(s)
  呉　研
- Organizer
  第78回応用物理学会秋季講演会
- Data Source
  KAKENHI-PROJECT-16K18094

1. IWANAMI Yuta

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

WU Yan 呉研

Research Projects

Research Products

Co-Researchers

Heavy-ion induced current in Tunnel FETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] 微細SOIデバイスの重イオン照射誘起寄生バイポーラ効果抑制2017

Author(s)

Journal Title

Data Source

[Presentation] The Impact of Tunnel FET on Heavy Ion Induced Transient Effect2017

Author(s)

Organizer

Data Source

[Presentation] トンネルFET ベースCMOS回路のシングルイベント耐性2017

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Formation of Magnesium Silicide for Source Material in Si based Tunnel FET by Annealing of Mg/Si Thin Film Multi-Stacks2017

Author(s)

Organizer

Data Source

[Presentation] LDD構造を用いたトンネルFET ベースCMOS回路においての耐放射線性評価2017

Author(s)

Organizer

Data Source

WU Yan 呉 研

Research Projects

Research Products

Co-Researchers

Heavy-ion induced current in Tunnel FETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] 微細SOIデバイスの重イオン照射誘起寄生バイポーラ効果抑制2017

Author(s)

Journal Title

Data Source

[Presentation] The Impact of Tunnel FET on Heavy Ion Induced Transient Effect2017

Author(s)

Organizer

Data Source

[Presentation] トンネルFET ベースCMOS回路のシングルイベント耐性2017

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Formation of Magnesium Silicide for Source Material in Si based Tunnel FET by Annealing of Mg/Si Thin Film Multi-Stacks2017

Author(s)

Organizer

Data Source

[Presentation] LDD構造を用いたトンネルFET ベースCMOS回路においての耐放射線性評価2017

Author(s)

Organizer

Data Source

WU Yan 呉研