Okumura Hironori 奥村宏典

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OKUMURA Hironori 奥村宏典

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Researcher Number	80756750
Other IDs	https://orcid.org/0000-0002-5464-9169
Affiliation (Current)	2024: 筑波大学, 数理物質系, 助教
Affiliation (based on the past Project Information) *help	2015 – 2024: 筑波大学, 数理物質系, 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Basic Section 21050:Electric and electronic materials-related / Crystal engineering / Electronic materials/Electric materials Except Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Science and Engineering
Keywords	Principal Investigator 窒化物半導体 / パワーデバイス / 高温デバイス / 接触抵抗 / AlN / イオン注入 / 縦型デバイス / 不純物拡散 / エッチング / 電子デバイス・機器 … More / 半導体物性 / 窒素極性面 / 高温熱処理 / 結晶成長 / 縦型素子 / ワイドギャップ半導体 / 金属/半導体界面 / 高耐圧素子 / デバイスプロセス / 高温アニール / オーミック電極 / 点欠陥評価 / MOS構造 / トランジスタ / 熱酸化 / MESFET / Siドーピング / 表面処理 / SBD / MOSFET / エピタキシャル / 結晶工学 / 電子・電気材料 / 結晶品質 / 高温成長 / 有機金属気相成長法 / 分極効果トランジスタ / 酸化物半導体 / 有機金属気相成長 / 電界効果トランジスタ / アンモニアMBE / トンネル電流 / バックワードダイオード / 高濃度p型ドーピング / 格子欠陥 / 電気・電子材料 / アニール / 高電界効果トランジスタ / p型半導体 / 電気的特性評価 / 点欠陥 … More Except Principal Investigator イオン注入 / 陽電子消滅 / 点欠陥 / III族窒化物半導体 / 不純物活性化 / II属窒化物半導体 / フォトルミネッセンス / III属窒化物半導体 / 第一原理計算 / 電流誘起磁壁移動 / スピン移行トルク / 電流駆動磁壁移動 / 磁壁 / スピントロ二クス / 磁化補償 / 垂直磁気異方性 / フェリ磁性体 / スピントロニクス / 結晶工学 / 結晶成長 / 格子欠陥 / 長周期InGaN/GaN超格子構造 / 捕獲 / キャリア / 欠陥 / 光熱偏光分光法 / X線回折 / 陽電子 / 0次元欠陥 / 理論計算 / 室温PL発光寿命 / 超格子構造 / キャリア捕獲 / 結晶特異構造 / 電気的特性 / 光学特性 / 結晶欠陥 / 光熱偏向分光法 / 陽電子消滅シミュレーション / 空孔型欠陥 / 結晶 Less

Fabrication of vertical AlN devicesPrincipal Investigator
- Principal Investigator
  
  奥村宏典
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  University of Tsukuba
A study of the activation mechanism of implanted impurities and control of point defect in group III nitride
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  University of Tsukuba
Nitride-based spintronics materials for ultrafast current-induced domain wall motion
- Principal Investigator
  
  末益崇
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  University of Tsukuba
Building of Technical Basis for fabrication of high-power AlN devicesPrincipal Investigator
- Principal Investigator
  
  okumura hironori
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Tsukuba
Reduction of contact resistance and demonstration of nitrogen-polar AlN field-effect transistorsPrincipal Investigator
- Principal Investigator
  
  Hironori Okumura
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  University of Tsukuba
Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilation
- Principal Investigator
  
  Uedono Akira
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Defect Evaluation of InAlN after Device Process and their Electrical PropertiesPrincipal Investigator
- Principal Investigator
  
  OKUMURA Hironori
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba

All 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation Patent

[Journal Article] Mg implantation in AlN layers on sapphire substrates2023
- Author(s)
  Okumura Hironori、Uedono Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 2 Pages: 020901-020901
- DOI
  10.35848/1347-4065/acb898
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02166
[Journal Article] Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing2022
- Author(s)
  Okumura Hironori、Watanabe Yasuhiro、Shibata Tomohiko、Yoshizawa Kohei、Uedono Akira、Tokunaga Hiroki、Koseki Shuuichi、Arimura Tadanobu、Suihkonen Sami、Palacios Tom?s
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 2 Pages: 026501-026501
- DOI
  10.35848/1347-4065/ac47aa
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02166, KAKENHI-PROJECT-23K21082
[Journal Article] Optical and electrical properties of silicon-implanted α-Al<sub>2</sub>O<sub>3</sub>2021
- Author(s)
  Okumura Hironori、Jinno Riena、Uedono Akira、Imura Masataka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 10 Pages: 106502-106502
- DOI
  10.35848/1347-4065/ac21af
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K21082
[Journal Article] Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy2020
- Author(s)
  Okumura Hironori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 7 Pages: 075503-075503
- DOI
  10.35848/1347-4065/ab9a8b
- NAID
  120007169672
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination2019
- Author(s)
  Okumura Hironori、Tanaka Taketoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 12 Pages: 120902-120902
- DOI
  10.7567/1347-4065/ab4f90
- NAID
  120007132688
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution2019
- Author(s)
  Okumura Hironori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 2 Pages: 026502-026502
- DOI
  10.7567/1347-4065/aaf78b
- NAID
  210000135293
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-17K14110
[Journal Article] Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)2019
- Author(s)
  Okumura Hironori、Kato Yuji、Oshima Takayoshi、Palacios Tomas
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBD12-SBBD12
- DOI
  10.7567/1347-4065/ab002b
- NAID
  210000135426
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-17K14110
[Journal Article] Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm2019
- Author(s)
  Lemettinen Jori、Chowdhury Nadim、Okumura Hironori、Kim Iurii、Suihkonen Sami、Palacios Tomas
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 40 Issue: 8 Pages: 1245-1248
- DOI
  10.1109/led.2019.2923902
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-19H02166
[Journal Article] AlN metal-semiconductor field-effect transistors using Si-ion implantation2018
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, Y. Zhang, D. Piedra, and T. Palacios
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149017
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC2018
- Author(s)
  J. Lemettinen、H. Okumura、I. Kim、M. Rudzinski、J. Grzonka、T. Palacios、S. Suihkonen
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 487 Pages: 50-56
- DOI
  10.1016/j.jcrysgro.2018.02.020
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110, KAKENHI-PLANNED-16H06424
[Journal Article] AlN metal-semiconductor field-effect transistors using Si-ion implantation2018
- Author(s)
  H. Okumura、S. Suihkonen、J. Lemettinen、A. Uedono、Y. Zhang、D. Piedra、T. Palacios
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FR11-04FR11
- DOI
  10.7567/jjap.57.04fr11
- NAID
  210000149017
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110, KAKENHI-PLANNED-16H06424
[Journal Article] N-polar AlN buffer growth by metal organic vapor phase epitaxy for transistor applications2018
- Author(s)
  Lemettinen Jori、Okumura Hironori、Palacios Tomas、Suihkonen Sami
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 10 Pages: 101002-101002
- DOI
  10.7567/apex.11.101002
- NAID
  210000136358
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-17K14110
[Journal Article] MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality2018
- Author(s)
  J. Lemettinen、H. Okumura、I. Kim、C. Kauppinen、T. Palacios、S. Suihkonen
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 487 Pages: 12-16
- DOI
  10.1016/j.jcrysgro.2018.02.013
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110, KAKENHI-PLANNED-16H06424
[Journal Article] Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam2016
- Author(s)
  Akira Uedono, Marco Malinverni, Denis Martin, Hironori Okumura, Shoji Ishibashi, Nicolas Grandjean
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119 Issue: 24 Pages: 245702-245702
- DOI
  10.1063/1.4954288
- NAID
  120007129545
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06070
[Journal Article] Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy2016
- Author(s)
  Hironori Okumura, Denis Martin, Marco Malinverni, Nicolas Grandjean
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 7 Pages: 072102-072102
- DOI
  10.1063/1.4942369
- NAID
  120007135561
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06070
[Journal Article] Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN2016
- Author(s)
  Hironori Okumura, Denis Martin, Nicolas Grandjean
- Journal Title
  
  Applied Physics Letter
  
  Volume: 109 Issue: 25 Pages: 252101-252101
- DOI
  10.1063/1.4972408
- NAID
  120007135102
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06070
[Patent] 導電性ＡｌＮエピタキシャル膜付き基板及びその製造方法2020
- Inventor(s)
  奥村宏典 , 柴田智彦 , 渡邊康弘
- Industrial Property Rights Holder
  奥村宏典 , 柴田智彦 , 渡邊康弘
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2020-196391
- Filing Date
  2020
- Acquisition Date
  2022
- Data Source
  KAKENHI-PROJECT-19H02166
[Presentation] (AlGa)2O3/Ga2O3 resonant tunneling diodes2020
- Author(s)
  Hironori Okumura
- Organizer
  Compound Semiconductor Week 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02166
[Presentation] ベータ型(AlGa)2O3/Ga2O3 共鳴トンネルダイオードの作製2020
- Author(s)
  奥村宏典
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Demonstration of (AlGa)2O3-channel MOSFETs2019
- Author(s)
  H. Okumura, Y. Kato, T. Oshima, and T. Palacios,
- Organizer
  2019 International Workshop on Gallium Oxide and related materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Demonstration of (AlGa)2O3-channel MOSFETs2019
- Author(s)
  Hironori Okumura, Yuji Kato, Takayoshi Oshima, Tomas Palacios
- Organizer
  2019 International Workshop on Gallium Oxide and related materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02166
[Presentation] Demonstration of Nitrogen-face AlN-based polarization field-effect transistors2018
- Author(s)
  Hironori Okumura, Jori Lemettinen, Sami Suihkonen, Tomas Palacios
- Organizer
  The International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Demonstration of beta-(AlGa) 2 O 3 (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V2018
- Author(s)
  Hironori Okumura, Yuji Kato,Takayoshi Oshima, Tomas Palacios
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Progress and Challenges of Crystal Growths and Devices for Wide Band-gap Semiconductors over 5 eV2018
- Author(s)
  H. Okumura
- Organizer
  Seminar, Ohio State University
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Nitrogen-face AlN-based field-effect transistors2018
- Author(s)
  Hironori Okumura, Jori Lemettinen, Sami Suihkonen, Tomas Palacios
- Organizer
  Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Demonstration of beta-(AlGa)2O3 (010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V2018
- Author(s)
  H. Okumura, Y. Kato, T. Oshima, T. Palacios
- Organizer
  2018 Int. Conf. Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN-channel metal-semiconductor field-effect transistors2018
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, and T. Palacios
- Organizer
  MARC 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Nitrogen-face AlN-based field-effect transistors2018
- Author(s)
  H. Okumura, J. Lemettinen, S. Suihkonen, T. Palacios
- Organizer
  45th Int. Sym. Compound Semiconductors, 30th Int. Conf. Indium Phosphide and Related Materials, Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Demonstration of Nitrogen-face AlN-based polarization field-effect transistors2018
- Author(s)
  H. Okumura, J. Lemettinen, S. Suihkonen, T. Palacios
- Organizer
  Int. Workshop on Nitride Semiconductor 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] MOVPE growth of nitrogen-polar AlN on C-face 4H-SiC with miscut2017
- Author(s)
  J. Lemettinen, H. Okumura, T. Palacios, and S. Suihkonen
- Organizer
  12th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Electrical Properties of Si-Ion Implanted AlN2017
- Author(s)
  H. Okumura, S. Suihkonen, and T. Palacios
- Organizer
  12th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Electrical Properties of Si-Ion Implanted AlN2017
- Author(s)
  H. Okumura, S. Suihkonen, and T. Palacios
- Organizer
  12th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, T. Palacios
- Organizer
  2017 Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, and T. Palacios
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, and T. Palacios
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] MOVPE growth of nitrogen-polar AlN on C-face 4H-SiC with miscut2017
- Author(s)
  J. Lemettinen, H. Okumura, T. Palacios, and S. Suihkonen
- Organizer
  12th Int. Conf. on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, T. Palacios,
- Organizer
  2017 Material Research Society Fall meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110
[Presentation] Electrical Properties of Mg-doped GaN with High Acceptor Concentrations2016
- Author(s)
  Hironori Okumura, Marco Malinverni, Denis Martin, and Nicolas Grandjean
- Organizer
  19th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Montpellier France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06070
[Presentation] High p-type GaN for advanced optoelectronic devices2016
- Author(s)
  Hironori Okumura, Denis Martin, Marco Malinverni, Nicolas Grandjean
- Organizer
  2016 IEEE PHOTONICS CONFERENCE, 29TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY
- Place of Presentation
  Hilton Waikoloa Village Waikoloa, Hawaii USA
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06070
[Presentation] Electrical Properties of Mg-doped GaN with High Acceptor Concentrations2016
- Author(s)
  Hironori Okumura, Marco Malinverni, Denis Martin, and Nicolas Grandjean
- Organizer
  2016 Materials Research Societies Fall meeting,
- Place of Presentation
  Boston US
- Year and Date
  2016-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06070

1. Uedono Akira (20213374)

# of Collaborated Projects: 4 results

# of Collaborated Products: 9 results
2. 石橋章司 (30356448)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. PALACIOS Tomas

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
4. SUIHKONEN Sami

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
5. 大島永康 (00391889)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. 角谷正友 (20293607)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 末益崇 (40282339)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 本多周太 (00402553)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 中堂博之 (30455282)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 柳原英人 (50302386)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 秩父重英 (80266907)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 堀田昌宏 (50549988)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 井村将隆 (80465971)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. Oshima Takayoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
15. GRANDJEAN Nicolas

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
16. Kakanakova Anelia

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Okumura Hironori 奥村 宏典

OKUMURA Hironori 奥村 宏典

Research Projects

Research Products

Co-Researchers

Fabrication of vertical AlN devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

A study of the activation mechanism of implanted impurities and control of point defect in group III nitride

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Nitride-based spintronics materials for ultrafast current-induced domain wall motion

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Building of Technical Basis for fabrication of high-power AlN devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Reduction of contact resistance and demonstration of nitrogen-polar AlN field-effect transistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilation

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Defect Evaluation of InAlN after Device Process and their Electrical PropertiesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Mg implantation in AlN layers on sapphire substrates2023

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[Journal Article] Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing2022

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[Journal Article] Optical and electrical properties of silicon-implanted α-Al<sub>2</sub>O<sub>3</sub>2021

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[Journal Article] Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy2020

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NAID

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[Journal Article] Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination2019

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NAID

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[Journal Article] Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution2019

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NAID

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Okumura Hironori 奥村宏典

OKUMURA Hironori 奥村宏典