IWAKI Toshihiro 岩城敏博

Researcher Number	90019191
External Links
Affiliation (based on the past Project Information) *help	1997 – 1998 : 富山大学, 工学部, 教授 1994 – 1995 : 富山大学, 工学部, 教授 1986 – 1987 : Toyama University, Faculty of Engineering, 工学部, 講師 1986 : Toyama University, Faculty of Engineering, 工学部, 講師
Review Section/Research Field	Principal Investigator 材料力学 / Thermal engineering Except Principal Investigator 結晶学
Keywords	Principal Investigator 半導体 / 熱応力 / 残留応力 / 分子動力学 / Semiconductor / 格子欠陥 / 赤外線光弾性 / 単純曲げ / 境界層 / 凝固 … More Except Principal Investigator Contact Resistance / Heat transfer / 超急冷 / Contact Line / Czochralski method / Nucleation / Perfect Crystal / 凝固組織 / 接触界線 / Molecular Dynamics / マランゴニ対流 / 過冷却 / 素材製造 / 伝熱 / Crystal Growth / 凝固 / 接触熱抵抗 / 転位密度 / Rapid Solidification / 熱応力 / 分子動力学 / 引上法 / 液体急冷 / Melt Quenching / 対流 / 急速凝固 / 過冷 / GaAs / MLEC method / 凝固シシュレーション / LEC法 / 温度分布 / 結晶成長 / 核生成 / Convection Less

Research Projects
(6results)
Co-Researchers
(5People)

クラスターの衝突過程におけるエネルギー変換機構Principal Investigator
- Principal Investigator
  
  岩城敏博
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Thermal engineering
- Research Institution
  University of Toyama
急冷凝固過程における熱応力生成とその制御に関する研究Principal Investigator
- Principal Investigator
  
  岩城敏博
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Toyama
DEVELOPMENT OF HIGH-SPEED SOLIDIFICATION PROCESS FOR PRODUCTION OF RAPID SOLIDIFICATION MATERIALS
- Principal Investigator
  
  NISHIO Shigefumi
- Project Period (FY)
  1993 – 1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  UNIVERSITY OF TOKYO
赤外線光弾性法による半導体単結晶の残留応力測定Principal Investigator
- Principal Investigator
  
  岩城敏博
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  材料力学
- Research Institution
  University of Toyama
Stress Analysis of Semiconducting Crystal during GrowthPrincipal Investigator
- Principal Investigator
  
  IWAKI Toshihiro
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  材料力学
- Research Institution
  Toyama University
Theoretical Study of the Growth of a Perfect GaAs Crystal by MLEC method
- Principal Investigator
  
  KOBAYASHI Nobuyuki
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  結晶学
- Research Institution
  Toyama University

1. KOBAYASHI Nobuyuki (50019204)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
2. NISHIO Shigefumi (00111568)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
3. SUZUKI Toshio (70115111)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
4. FUKUSAKO Shoichiro (00001785)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
5. 齋藤武雄 (80064161)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results

IWAKI Toshihiro 岩城 敏博

Research Projects

Co-Researchers

クラスターの衝突過程におけるエネルギー変換機構Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

急冷凝固過程における熱応力生成とその制御に関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Institution

DEVELOPMENT OF HIGH-SPEED SOLIDIFICATION PROCESS FOR PRODUCTION OF RAPID SOLIDIFICATION MATERIALS

Principal Investigator

Project Period (FY)

Research Category

Research Institution

赤外線光弾性法による半導体単結晶の残留応力測定Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Stress Analysis of Semiconducting Crystal during GrowthPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Theoretical Study of the Growth of a Perfect GaAs Crystal by MLEC method

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

IWAKI Toshihiro 岩城敏博