SAITO Toshio 斉藤敏夫

… Alternative Names

斎藤敏夫サイトウトシオ

齋藤敏夫サイトウトシオ

Less

Researcher Number	90170513
External Links
Affiliation (based on the past Project Information) *help	2006 – 2007: The University of Tokyo, 国際・産学共同研究センター, 助教 2005: 東京大学, 国際・産学共同研究センター, 助手 2002 – 2003: 東京大学, 国際産学共同研究センター, 助手 1996 – 2003: Univ. of Tokyo, Center for Cooperative Research, Research Associate, 国際・産学共同研究センター, 助手 2001: 国際産学共同研究センター, 助手 … More 1997: University of Tokyo, Center for collaborative, Research Associate, 産学共同研究センター, 助手 1997: 国際産学協同研究センター, 助手 1997: 東京大学, 国際産学共同研究センター, 助手 1996: 東京大学, 国際・産学共同センター, 助手 1996: 東京大学, 国際産学共同センター, 助手 1989 – 1995: 東京大学, 生産技術研究所, 助手 1986: Institute of INdustrial Science, University of Tokyo, 生産技術研究所, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / 表面界面物性 / Applied materials science/Crystal engineering Except Principal Investigator 電子デバイス・機器工学 / Applied materials / Applied materials science/Crystal engineering / 電子材料工学
Keywords	Principal Investigator 電子構造 / 量子ドット / 強結合法 / GaN / quantum dot / InAs / 半導体レーザ / piezoelectric effect / electronic structure / 窒化ガリウム … More / ピエゾ効果 / tight-binding method / バンド不連続量 / アルミニウム砒素 / ガリウム砒素 / light polarization / semiconductor optical amplifier / semiconductor lasers / wave functions / quantum dots / semiconductor physics / VFF法 / 格子歪 / GaAs / 圧電効果 / 偏光 / 半導体光増幅器 / 波動関数 / 半導体物性 / oscillation performance / semiconductor laser / electronic structures / strain distribution / piezoelectric polarization / spontaneous polarization / 半導体レーザー / 発振特性 / 歪分布 / ピエゾ分極 / 自発分極 / wave function overlap / Stark effect / fight-binding method / lnGaN / 重なり積分 / シュタルク効果 / InGaN / quantum confinement / valence-force-field method / indium gallium nitride / gallium nitride / nitride semiconductors / 量子閉じ込め効果 / 混晶 / 窒化インジウム / 量子閉じ込め / 価電子力場法 / 窒化インジウムガリウム / 窒化物半導体 / Tight-Binding Method / Band Offset / Semiconductor Interface / Piezo-Effect / Ultra Thin Film / Aluminium Arsenide / Indium Arsenide / Gallium Arsenide / カリウム砒素 / 半導体界面 / 超薄膜 / インジウム砒素 / face orientation / photoelectron spectroscopy / silicon / band discontinuity / aluminum arsenide / gallium arsenide / hetero-junction / 面方位 / 光電子分光法 / シリコン / ヘテロ接合 … More Except Principal Investigator MOSFET / SOI / 半導体ヘテロ構造 / Gallium Arsenide / GaN / MOCVD / ガリウムム素 / 遠赤外光 / ガリウムひ素 / プラズモン / ホットエレクトロン / テラヘルツ光 / Focused Ion Beam / AlGaAs / 半導体ヘテロ接合 / Alloy Semiconductor / New Functional Device / Submicron Device / Transient Anneal / Ion Source / フォトルミネッセンス法 / 混晶 / イオン源 / 超微細ドーピング / 集束イオンビーム / フォトルミネセンス / 混晶半導体 / ガリウムヒ素 / 新機能デバイス / サブミクロンデバイス / トランジェントアニール / 集束イオンビーム;イオン源 / device processes / crystal growth / surface-emitting lasers / surface-emitting LEDs / quantum dots / microcavities / 化合物半導体 / 量子井戸 / 半導体レーザ / InGaN / 窒化ガリウム / デバイスプロセス / 結晶成長 / 面発光レーザ / 面発光LED / 強化ガリウム / 量子ドット / 微小共振器 / Silicon Oxide / Interface Traps / Oxidation / Charge Pumping / Si / 拡散 / LSI / MOS / 酸化膜界面 / 酸化 / チャージポンピング / 界面準位 / VLSI devices / Stochastic Fluctuations of Dopant Atoms / Fully Depleted SOI devices / Threshold Voltage / Fluctuations / Thin Film SOI MOSFET / 薄膜SOIMOS / デバイスシミュレーション / 薄膜SOI MOS / 不純物揺らぎ / LSIデバイス / 揺らぎ / 0.1ミクロンMOSFET / SIMOX / VLSIデバイス / 不純物数の統計的揺らぎ / 完全空乏型SOI MOSFET / サブ0.1ミクロンMOSFET / しきい値電圧 / 特性ばらつき / 薄膜SOI MOSFET / femtosecond / teraherz / heterostructure / Plasma oscillation / two-dimensional electron / ダイポールアンテナ / 光伝導ダイポールアンテナ / 極短寿命光伝導体 / フェムト秒 / テラヘルツ / ヘテロ構造 / プラズマ振動 / 2次元電子 / Dipole anntena / Ultra short a lifeti photoconductor / Garium Arsenide / Hot electron / Plasmon / semiconductor heterostructure / Far-infrared lingt / Terahertz light / 遠赤外線 / 量子細線構造 / 量子ナノ構造 / delta-doping / band bending / tight-binding calculations / x-ray photoemission spectroscopy / interface dipole / band offsets / heterojunction / 界面ダイポ-ル / 強結合法 / 光電子分光法 / バンド構造の制御 / デルタドーピング / バンドベンディング / タイトバインディング / XPS / 界面ダイポール / バンド不連続量 / Electron Scattering / Interference of Electron Waves / Quantum Wire / 電子-電子散乱 / 低相緩和機構 / 弱局在効果 / Al Ga As / 電子散乱 / 砒化ガリウム / 電子波干渉効果 / 量子細線 / 集束イオンビ-ム / X線光電子分光法 / ヘテロ接合バンド不連続 / 分子線エピタキシ- Less

Control of wave function coupling in stacked InAs quantum dots and its application to long-wavelength lasersPrincipal Investigator
- Principal Investigator
  
  SAITO Toshio
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Theoretical nnaalysis on control of polarization field in GaN-based quantum dot structures and improvement of lasing performancePrincipal Investigator
- Principal Investigator
  
  SAITO Toshio
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Development of Blue-Violet GaN Microcavity Surface-Emitting Lasers far Next-Generation Optical Memory Systems
- Principal Investigator
  
  ARAKAWA Yasuhiko
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Tokyo
Theoretical analysis of lasing characteristics of stacked lnGaN quantum dot lasers from atomic scalePrincipal Investigator
- Principal Investigator
  
  SAITO Toshio
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Atomic-scale study on electronic structure and emission mechanism or GaN-related semi-conductor quantum dotsPrincipal Investigator
- Principal Investigator
  
  SAITO Toshio
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Investigation of Oxidation Mechanisms in SOI Structures
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tokyo
Control of band offsets qt high-index semi conductor interfaces by the Piezo-effect induced with thin strained insertion layrsPrincipal Investigator
- Principal Investigator
  
  SAITO Toshio
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  University of Tokyo
Fluctuations of Characteristics in Sub-0.1mum Thin Film SOI CMOS LSI Devices
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tokyo
Terahertz Emission Spectroscopy of Hot Electron Systems in Semiconductor Heterostructures
- Principal Investigator
  
  HIRAKAWA Kazuhiko
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Tokyo
Terahertz emission from two-dimensional plasmons in semiconductor heterostructures
- Principal Investigator
  
  HIRAKAWA Kazuhiko
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Tokyo
Electronic states of site-controlled impurity layrs at semiconductor interfaces and its applications to control of band discontinuitiesPrincipal Investigator
- Principal Investigator
  
  SAITO Toshio
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Institute of Industrial Science, University of Tokyo.
Artificial Control of Semiconductor Heterojunction Band Discontinuity
- Principal Investigator
  
  IKOMA Toshiaki
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Applied materials
- Research Institution
  University of Tokyo
光電子分光法による半導体ヘテロ接合バンド不連続量に与える界面双極子効果の解明
- Principal Investigator
  
  HIRAKAWA Kazuhiko
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  The University of Tokyo
Interference Effect of Electron Waves in Quantum Wires Fabricated by Focused Ion Beam Implantation
- Principal Investigator
  
  IKOMA Toshiaki
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Institute of Industrial Science, University of Tokyo.
A Study on Ultrafine Doping by Focused Ion Beam Implantation
- Principal Investigator
  
  IKOMA Toshiaki
- Project Period (FY)
  1985 – 1986
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  The University of Tokyo

All 2008 2007 2006 2005

All Journal Article Presentation

[Journal Article] Optical polarization in columnar InAs/GaAs quantum dots: 8-band k- p calculations2008
- Author(s)
  T. Saito
- Journal Title
  
  Physical Review B 77
  
  Pages: 195318-195318
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560005
[Journal Article] Optical polarization in columnar InAs/GaAs quantum dots : 8-band k-p calculations2008
- Author(s)
  T. Saito
- Journal Title
  
  Physical Review B 77
  
  Pages: 195318-195318
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560005
[Journal Article] Optical polarization in columnar InAs/GaAs quantum dots: 8-band k-p calculations2008
- Author(s)
  T. Saito
- Journal Title
  
  Physical Review B 77・19
  
  Pages: 195318-195318
- Data Source
  KAKENHI-PROJECT-17560005
[Journal Article] Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering2005
- Author(s)
  T.Nakaoka, T.Saito, J.Tatebayashi, S.Hirose, T.Usuki, N.Yokoyama, Y.Arakawa
- Journal Title
  
  Physical Review B 71
  
  Pages: 205301-205301
- Data Source
  KAKENHI-PROJECT-17560005
[Journal Article] 自己形成量子ドットにおける線幅増大係数の低減に向けた検討2005
- Author(s)
  硴塚孝明, 斎藤敏夫, 荒川泰彦
- Journal Title
  
  第66回応用物理学会学術講演会予稿集 No.3
  
  Pages: 1227-1227
- Data Source
  KAKENHI-PROJECT-17560005
[Journal Article] Strain Distribution and Electronic States in Stacked InAs/GaAs Quantum Dots with Dot Spacing 0-6 nm2005
- Author(s)
  T. Saito
- Journal Title
  
  Physica E 26
  
  Pages: 217-221
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560005
[Presentation] InAs/GaAsコラム型量子ドットの偏光特性の理論解析(2)2007
- Author(s)
  斎藤敏夫
- Organizer
  第54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560005
[Presentation] Optical Polarization in Columnar InAs/GaAs Quantum Dots : Effect of Piezoelectricity2007
- Author(s)
  斎藤敏夫
- Organizer
  ナノ光・電子デバイスと量子情報エレクトロニクス
- Place of Presentation
  ガーデンパレス東京
- Year and Date
  2007-03-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560005
[Presentation] Theoretical analysis of optical polarization in InAs/GaAs columnar quantum dots (2)2007
- Author(s)
  T. Saito
- Organizer
  The 54th JSAP Spring Meeting
- Place of Presentation
  Aoyama Gakuin University
- Year and Date
  2007-03-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560005
[Presentation] InAs/GaAsコラム型量子ドットの偏光特性の理論解析 : 積層数依存性2006
- Author(s)
  斎藤敏夫
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学
- Year and Date
  2006-08-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560005
[Presentation] Theoretical analysis of optical polarization in InAs/GaAs columnar quantum dots: stacking-layer-number dependence2006
- Author(s)
  T. Saito
- Organizer
  The 67th JSAP Autumn Meeting
- Place of Presentation
  Ritsumeikan University
- Year and Date
  2006-08-31
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560005
[Presentation] InAs/GaAsコラム型量子ドットの偏光特性の積層数依存性2006
- Author(s)
  斎藤敏夫
- Organizer
  ナノ光電子デバイスシンポジウム
- Place of Presentation
  主婦会館プラザェフ
- Year and Date
  2006-05-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560005

1. HIRAKAWA Kazuhiko (10183097)

# of Collaborated Projects: 10 results

# of Collaborated Products: 0 results
2. IKOMA Toshiaki (80013118)

# of Collaborated Projects: 7 results

# of Collaborated Products: 0 results
3. ARAKAWA Yasuhiko (30134638)

# of Collaborated Projects: 6 results

# of Collaborated Products: 2 results
4. KURIHARA Yukiko (90013200)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. HIRAMOTO Toshiro (20192718)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. FUJITA Hiroyuki (90134642)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. KURODA Kazuo (10107394)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. G ファーソル (10251472)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. IKEDA Takahide

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. ONOMURA Masaaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 橋本佳男

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 三上修

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SAITO Toshio 斉藤 敏夫

斎藤 敏夫 サイトウ トシオ

齋藤 敏夫 サイトウ トシオ

Research Projects

Research Products

Co-Researchers

Control of wave function coupling in stacked InAs quantum dots and its application to long-wavelength lasersPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Theoretical nnaalysis on control of polarization field in GaN-based quantum dot structures and improvement of lasing performancePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Theoretical analysis of lasing characteristics of stacked lnGaN quantum dot lasers from atomic scalePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Atomic-scale study on electronic structure and emission mechanism or GaN-related semi-conductor quantum dotsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Control of band offsets qt high-index semi conductor interfaces by the Piezo-effect induced with thin strained insertion layrsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electronic states of site-controlled impurity layrs at semiconductor interfaces and its applications to control of band discontinuitiesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

SAITO Toshio 斉藤敏夫

斎藤敏夫サイトウトシオ

齋藤敏夫サイトウトシオ