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畠山 哲夫
ハタケヤマ テツオ
Connect your ORCID iD
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Researcher Number
90222215
Other IDs
Affiliation (Current)
2021: 富山県立大学, 工学部, 教授
Affiliation (based on the past Project Information)
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2019: 富山県立大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related
Keywords
Principal Investigator
SiC / MOS界面 / 移動度 / 界面準位 / 散乱要因 / クーロン散乱 / 界面ラフネス散乱 / 界面電界強度 / MOSFET / 散乱機構
Research Projects
(
1
results)
Project Start Year (Newest)
Project Start Year (Oldest)
A study on scattering mechanisms of inversion layer mobility in SiC MOSFETs
Principal Investigator
Ongoing
Principal Investigator
畠山 哲夫
Project Period (FY)
2019 – 2021
Research Category
Grant-in-Aid for Scientific Research (C)
Review Section
Basic Section 21050:Electric and electronic materials-related
Research Institution
Toyama Prefectural University
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