Hatakeyama Tetsuo 畠山哲夫

… Alternative Names

畠山哲夫ハタケヤマテツオ

Less

Researcher Number	90222215
Other IDs
Affiliation (Current)	2025: 富山県立大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2023: 富山県立大学, 工学部, 教授 2019 – 2021: 富山県立大学, 工学部, 教授
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator MOS界面 / SiC / 散乱 / 双極子 / シリコンカーバイド / 移動度 / 伝導帯オフセット / バンド配列 / 欠陥 / 第一原理計算 … More / 界面電界強度 / 界面ラフネス散乱 / クーロン散乱 / 散乱要因 / 界面準位 / 遮蔽 / 界面 / 二次元電子ガス / 電気双極子 / 散乱機構 / MOSFET / パワーデバイス / 界面テクノロジー / 電子デバイス Less

Research Projects
(2 results)
Research Products
(22 results)

Elucidation of the physical origin of the dominant scattering mechanism of electron mobility in SiC MOS interfacesPrincipal Investigator
- Principal Investigator
  
  畠山哲夫
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyama Prefectural University
A study on scattering mechanisms of inversion layer mobility in SiC MOSFETsPrincipal Investigator
- Principal Investigator
  
  Hatakeyama Tetsuo
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyama Prefectural University

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation

[Journal Article] First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO<sub>2</sub> interface2024
- Author(s)
  Matsuda Shun、Akiyama Toru、Hatakeyama Tetsuo、Shiraishi Kenji、Nakayama Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP69-02SP69
- DOI
  10.35848/1347-4065/ad1897
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03928
[Journal Article] Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs2022
- Author(s)
  Hatakeyama Tetsuo、Hirai Hirohisa、Sometani Mitsuru、Okamoto Dai、Okamoto Mitsuo、Harada Shinsuke
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 14 Pages: 145701-145701
- DOI
  10.1063/5.0086172
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04494
[Journal Article] Difference in electron mobility at 4H?SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering2020
- Author(s)
  Hirai Hirohisa、Hatakeyama Tetsuo、Sometani Mitsuru、Okamoto Mitsuo、Harada Shinsuke、Okumura Hajime、Yamaguchi Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 4 Pages: 042101-042101
- DOI
  10.1063/5.0012324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04494
[Journal Article] Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations2019
- Author(s)
  Sometani Mitsuru、Hosoi Takuji、Hirai Hirohisa、Hatakeyama Tetsuo、Harada Shinsuke、Yano Hiroshi、Shimura Takayoshi、Watanabe Heiji、Yonezawa Yoshiyuki、Okumura Hajime
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 13 Pages: 132102-132102
- DOI
  10.1063/1.5115304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04494
[Journal Article] Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ￣ 00 m-face and 11 2 ￣ 0 a-face characterized by Hall effect measurements2019
- Author(s)
  Hirai Hirohisa、Hatakeyama Tetsuo、Sometani Mitsuru、Okamoto Mitsuo、Harada Shinsuke、Okumura Hajime
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 13 Pages: 132106-132106
- DOI
  10.1063/1.5114669
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] 4H-SiC/SiO2 界面におけるバンド配列の理論解析：界面双極子形成の検討2024
- Author(s)
  松田隼，秋山亨,畠山哲夫，白石賢二,中山隆史
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] ハイブリッド密度汎関数法による 4H-SiC/SiO2 界面におけるバンド配列の面方位依存性の理論解析2023
- Author(s)
  松田隼，秋山亨,畠山哲夫，白石賢二 ,中山隆史
- Organizer
  第８４回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] 4H-SiC/SiO2 界面におけるバンド配列および界面双極子形成に関する理論解析2023
- Author(s)
  松田隼，秋山亨, 畠山哲夫，白石賢二 ,中山隆史
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs2023
- Author(s)
  T. Hatakeyama, H. Hirai, M. Sometani, D. Okamoto, M. Okamoto, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] pチャネル4H-SiC MOSFETに対するTACD チャネル移動度モデル構築2023
- Author(s)
  志村一眞, 岡本大、畠山哲夫
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] pチャネルSiC MOSFETにおけるCharge Pumping電流のチャネル長依存性2023
- Author(s)
  田口雄大, 岡本大染谷満, 平井悠久岡本光央, 畠山哲夫
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO2 interface2023
- Author(s)
  Shun Matsuda, Toru Akiyama, Tetsuo Hatakeyama, Kenji Shiraishi, Takashi Nakayama
- Organizer
  2023 International Conferences on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03928
[Presentation] C12 On-the-fly charge pumpingの温度依存性測定による SiC MOSFETのNBTI特性の解析2021
- Author(s)
  岡野夏樹, 岡本大, 染谷満, 平井悠久 , 岡本光央, 畠山哲夫
- Organizer
  令和３年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] II-2 改良高速On-the-fly法によるSiC MOSFETのNBTI評価2021
- Author(s)
  坂田大輝, 岡本大, 染谷満, 平井悠久, 岡本光央, 原田信介, 畠山哲夫 , 矢野裕司, 岩室憲幸
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] C02 TCADによるSiC MOSFETのチャージポンピング電流のシミュレーション2021
- Author(s)
  守山遼, 犬塚柊, 岡本大, 畠山哲夫
- Organizer
  令和３年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] IB-10 4H-SiC非極性面上のMOS界面散乱に対する酸化プロセスの影響2021
- Author(s)
  染谷満, 平井悠久, 岡本光央, 畠山哲夫, 原田信介
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] IIB-9 SiC van der PauwおよびHall bar素子の最適設計2021
- Author(s)
  守山遼, 岡本大, 畠山哲夫
- Organizer
  先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] C04 TCAD によるクローバー型ホール効果測定素子設計の検討2021
- Author(s)
  伊藤大地, 守山遼, 岡本大, 畠山哲夫
- Organizer
  令和３年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] C03 TCAD によるギリシア十字架型ホール効果測定素子設計の検討2021
- Author(s)
  中村宙夢, 守山遼, 岡本大, 畠山哲夫
- Organizer
  令和３年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] SiC MOS反転層移動度の劣化要因に関する理論的考察2021
- Author(s)
  畠山哲夫, 平井悠久, 染谷満岡本大, 岡本光央, 原田信介
- Organizer
  電子デバイス界面テクノロジー研究会 (第26回研究会)
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] C01 SiC Hall barの最適設計に関する考察2021
- Author(s)
  守山遼, 岡本大, 畠山哲夫
- Organizer
  令和３年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04494
[Presentation] [We-2A-02] The Effects of Coulomb Scattering Centers at SiO2/SiC interfaces on Electron Mobility in Inversion Layers2019
- Author(s)
  Tetsuo Hatakeyama, Minoru Sometani, Hirohisa Hirai, Shinsuke Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04494

Hatakeyama Tetsuo 畠山 哲夫

畠山 哲夫 ハタケヤマ テツオ

Research Projects

Research Products

Elucidation of the physical origin of the dominant scattering mechanism of electron mobility in SiC MOS interfacesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

A study on scattering mechanisms of inversion layer mobility in SiC MOSFETsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO<sub>2</sub> interface2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Difference in electron mobility at 4H?SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 1 1 ￣ 00 m-face and 11 2 ￣ 0 a-face characterized by Hall effect measurements2019

Author(s)

Journal Title

DOI

Data Source

[Presentation] 4H-SiC/SiO2 界面におけるバンド配列の理論解析：界面双極子形成の検討2024

Author(s)

Organizer

Data Source

[Presentation] ハイブリッド密度汎関数法による 4H-SiC/SiO2 界面におけるバンド配列の面方位依存性の理論解析2023

Author(s)

Organizer

Data Source

[Presentation] 4H-SiC/SiO2 界面におけるバンド配列および界面双極子形成に関する理論解析2023

Author(s)

Organizer

Data Source

[Presentation] A Physics-based Model for Inversion Layer Mobility in SiC MOSFETs2023

Author(s)

Organizer

Data Source

[Presentation] pチャネル4H-SiC MOSFETに対するTACD チャネル移動度モデル構築2023

Author(s)

Organizer

Data Source

[Presentation] pチャネルSiC MOSFETにおけるCharge Pumping電流のチャネル長依存性2023

Author(s)

Organizer

Data Source

[Presentation] First-principles study for orientation dependence of band alignments at the 4H-SiC/SiO2 interface2023

Author(s)

Organizer

Data Source

[Presentation] C12 On-the-fly charge pumpingの温度依存性測定による SiC MOSFETのNBTI特性の解析2021

Author(s)

Organizer

Data Source

[Presentation] II-2 改良高速On-the-fly法によるSiC MOSFETのNBTI評価2021

Author(s)

Organizer

Data Source

[Presentation] C02 TCADによるSiC MOSFETのチャージポンピング電流のシミュレーション2021

Author(s)

Organizer

Hatakeyama Tetsuo 畠山哲夫

畠山哲夫ハタケヤマテツオ