FUJIWARA Kenzo 藤原賢三

Researcher Number	90243980
Other IDs
Affiliation (based on the past Project Information) *help	2004 – 2006: 九州工業大学, 工学部, 教授 2000: Kyushu Institute of Technology, Dept.of Electrical Engineering, Professor, 工学部・電気工学科, 教授 1997 – 1999: 九州工業大学, 工学部, 教授 1994 – 1995: 九州工業大学, 工学部・電気工学科, 教授 1993 – 1994: 九州工業大学, 工学部, 教授
Review Section/Research Field	Principal Investigator 極微細構造工学 / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Electronic materials/Electric materials
Keywords	Principal Investigator 半導体超格子 / GaAs / 光電流スペクトル / 量子井戸 / quantum well / 励起子 / 光伝導 / InGaN / photoluminescence / フォトルミネッセンス … More / 光電気効果 / シュタルク効果 / 発光再結合 / 光生成キャリアー / 光吸収スペクトル / Stark effects / carrier capture / electroluminescence / light-emitting diode / III-nitride semiconductors / フォトルミネッサンス / 発行ダイオード / 量子井戸構成 / シュタルク電界効果 / キャリアー捕獲 / エレクトロルミネッセンス / 発光ダイオード / 窒化ガリウム系半導体 / 量子井戸構造 / radiative recombination lifetime / emission dynamics / time-resolved emission / quantum capture / exciton / 発光再結合寿命 / 発光ダイナミクス / 時間分解発光 / 量子捕獲 / photo-excited carrier transport / photo-electric effect / scanning tunneling microscopy (STM) / local probe / photocurrent / tuneling / ピエゾ素子 / トンネル電流 / 光生成キャリア / 共鳴励起 / 走査型トンネル電子顕微鏡 / 光励起キャリアー伝導 / 走査型トンネル顕微鏡 / 局所プローブ / 光電流 / トンネル効果 / resonant tunneling / photoelectric effect / excitonic effect / Stark effect / optical transition / Photocurrent spectra / quantum structure / semiconductor superlattice / 励起+効果 / 共鳴トンネル効果 / 励起子効果 / 光学遷移 / 量子構造 / Heterointerface / Han-Hove Singularity / Photoconductivity / Electrooptic Effects / Stark Effects / Optical Spectra / Miniband / Semiconductor Superlattice / ヘテロ界面 / バン・ホ-フ特異点 / 電気光学効果 / 光スペクトル / ミニバンド Less

Carrier quantum capture and escape mechanisms in semiconductor quantum structuresPrincipal Investigator
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY
Quantum capture dynamics between different semiconductor quantum structuresPrincipal Investigator
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY
Trial manufacturing of nanometer-scale-area photocurrent response measurement apparatus under local and resonant photoexcitationPrincipal Investigator
- Principal Investigator
  
  FIJIWARA Kenzo
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY
Electric field control of opical transitions in semiconductor superlattice spacesPrincipal Investigator
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  極微細構造工学
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY
半導体超格子の非線形光電流スペクトル応答と励起子効果Principal Investigator
- Principal Investigator
  
  藤原賢三
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  極微細構造工学
- Research Institution
  Kyushu Institute of Technology
量子井戸系における光電流分光法の研究Principal Investigator
- Principal Investigator
  
  藤原賢三
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu Institute of Technology
Wannier-Stark localization in semiconductor superlatticesPrincipal Investigator
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  Kyushu Institute of Technology

All 2007 2006 2005 2004

All Journal Article

[Journal Article] Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes : A comparative study2007
- Author(s)
  A.Hori, D.Yasunaga, K.Fujiwara
- Journal Title
  
  Thin Solid Films 515
  
  Pages: 4480-4483
- NAID
  120002440618
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007
- Author(s)
  T.Inada, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) (In print)
- NAID
  120002440609
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes2007
- Author(s)
  T.Inoue, K.Fujiwara, J.K.Sheu
- Journal Title
  
  The proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (IEEE Press) (未定)(印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007
- Author(s)
  T.Inada, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c)4[7]
  
  Pages: 2768-2771
- NAID
  120002440609
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Hole escape processes deterimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions2007
- Author(s)
  T.Inoue, K.Fujiwara, J.K Sheu
- Journal Title
  
  Applied Physics Letters 90[16]
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes2007
- Author(s)
  T.Inoue, K.Fujiwara, J.K.Sheu
- Journal Title
  
  The proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (IEEE Press) (In print)
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Hole escape processes deterimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions2007
- Author(s)
  T.Inoue, K.Fujiwara, J.K.Sheu
- Journal Title
  
  Applied Physics Letters 90[16]
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007
- Author(s)
  T.Inada, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) 4[7]
  
  Pages: 2768-2771
- NAID
  120002440609
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes"2007
- Author(s)
  T.Inoue, K.Fujiwara, J.K.Sheu
- Journal Title
  
  Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, to be published by the IEEE Press (in print)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes : A comparative study2007
- Author(s)
  A.Hori, D.Yasunaga, K.Fujiwara
- Journal Title
  
  Thin Solid Films Vol. 515
  
  Pages: 4480-4483
- NAID
  120002440618
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Internal and external field effects on radiative recombination efficiency in InGaN quantum well diodes2006
- Author(s)
  H.Aizawa, K.Soejima, A.Hori, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) 3[3]
  
  Pages: 589-593
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Electroluminescence efficiency of blue InGaN/GaN quantum well diodes with and without an n-InGaN electron reservoir layer2006
- Author(s)
  N.Otsuji, K.Fujiwara, J.K.Sheu
- Journal Title
  
  Journal of Applied Physics 100[11]
- NAID
  120002440717
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006
- Author(s)
  A.Satake, K.Soejima, H.Aizawa, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) 3[6]
  
  Pages: 2203-2206
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes2006
- Author(s)
  H.Aizawa, K.Soejima, A.Hori, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c)3[3]
  
  Pages: 589-593
- NAID
  120002440526
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Internal and external field effects on radiative recombination efficiency in InGaN quantum well diodes2006
- Author(s)
  H.Aizawa, K.Soejima, A.Hori, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi(c) 3・3
  
  Pages: 589-593
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes : a comparative study2006
- Author(s)
  A.Hori, D.Yasunaga, K.Fujiwara
- Journal Title
  
  Thin Solid Films (in print)
- NAID
  120002440618
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006
- Author(s)
  A.Satake, K.Soejima, H.Aizawa, K.Fujiwara
- Journal Title
  
  Physica Status Solidi(b) (in print)
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Carrier capture and escape processes in (In, Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006
- Author(s)
  A.Satake, K.Soejima, H.Aizawa, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c)3[6]
  
  Pages: 2203-2206
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer2005
- Author(s)
  N.Otsuji, Y.Takahashi, A.Satake, K.Fujiwara, J.K.Shue, U.Jahn, H.Kostial, H.T.Grahn
- Journal Title
  
  Proceedings of 13th International Semiconducting and Insulating Materials Conference (Beijing, China, September 20-24, 2004) (印刷中)
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In, Ga)N/GaN quantum-well diodes with an electron reservoir layer2004
- Author(s)
  N.Otsuji, Y.Takahashi, A.Satake, K.Fujiwara, J.K.Shue, U.Jahn, H.Kostial, H.T.Grahn
- Journal Title
  
  Proceedings of 13th International Semiconducting and Insulating Materials Conference (Bejin, China, September 20-24, 2004)
  
  Pages: 276-280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer2004
- Author(s)
  N.Otsuji, Y.Takahashi, A.Satake, K.Fujiwara, J.K.Shue, U.Jahn, H.Kostial, H.T.Grahn
- Journal Title
  
  Proceedings of 13th International Semiconducting and Insulating Materials Conference (Beijing, China, September 20-24, 2004)
  
  Pages: 276-280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157

1. TAKEUCHI Masaichi (60284585)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. KAWASHIMA Kenji (50284584)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SATAKE Akihiro (90325572)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
4. NAKAYAMA Masaaki (30172480)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SATO Kazuo (30315163)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. SCHNEIDER Harald

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. PLOOG Klaus

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. HARALD SCHNE

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KLAUS PLOOG

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

FUJIWARA Kenzo 藤原 賢三

Research Projects

Research Products

Co-Researchers

Carrier quantum capture and escape mechanisms in semiconductor quantum structuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Quantum capture dynamics between different semiconductor quantum structuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Trial manufacturing of nanometer-scale-area photocurrent response measurement apparatus under local and resonant photoexcitationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electric field control of opical transitions in semiconductor superlattice spacesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

半導体超格子の非線形光電流スペクトル応答と励起子効果Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

量子井戸系における光電流分光法の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Wannier-Stark localization in semiconductor superlatticesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Institution

[Journal Article] Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes : A comparative study2007

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007

Author(s)

Journal Title

NAID

Data Source

[Journal Article] External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Hole escape processes deterimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] External Field Effects on Photoluminescence Properties of Blue InGaN Quantum-Well Diodes2007

Author(s)

Journal Title

Data Source

[Journal Article] Hole escape processes deterimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions2007

Author(s)

Journal Title

Description

FUJIWARA Kenzo 藤原賢三