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Maezawa Kouichi  前澤 宏一

… Alternative Names

前澤 宏一  マエザワ コウイチ

MAEZAWA Koichi  前澤 宏一

MAEZAWA KOICHI  前澤 晃一

Less
Researcher Number 90301217
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-6132-7889
External Links
Affiliation (Current) 2025: 富山大学, 工学部, 名誉教授
Affiliation (based on the past Project Information) *help 2023: 富山大学, 学術研究部工学系, 教授
2019 – 2021: 富山大学, 学術研究部工学系, 教授
2016 – 2018: 富山大学, 大学院理工学研究部(工学), 教授
2016: 富山大学, 大学院理工学研究部, 教授
2015: 富山大学, 理工学研究部(工学), 教授 … More
2014: 富山大学, 工学部, 教授
2013 – 2014: 富山大学, 大学院理工学研究部(工学), 教授
2012: 富山大学, その他の研究科, 教授
2012: 富山大学, 大学院・理工学研究部, 教授
2008 – 2011: University of Toyama, 理工学研究部(工学), 教授
2010: University of Toyama, 大学院・理工学研究部(工学), 教授
2010: 富山大学, 工学部, 教授
2007: University of Toyama, Graduate School of Science and Engineering, Professor
2006: 富山大学, 大学院理工学研究部(工学), 教授
2002 – 2005: Nagoya University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授
2000 – 2001: 名古屋大学, 工学部, 助教授 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / 電子デバイス・機器工学
Except Principal Investigator
Electron device/Electronic equipment / 電子デバイス・機器工学 / Power engineering/Power conversion/Electric machinery / Measurement engineering
Keywords
Principal Investigator
共鳴トンネル / InP / InGaAs / HEMT / 発振器 / InAlAs / ΔΣ変調 / THz / センサ / resonant tunneling … More / 集積回路 / 異種材料集積 / 増幅器 / 走査型プローブ顕微鏡 / ノイズフロア / FPGA / マイクロフォン / 周波数ΔΣ変調 / ミリ波 / マイクロ波 / 非晶質 / 溶液プロセス / マイクロ波集積回路 / 逐次トンネル / 有効質量 / 酸化物半導体 / 共鳴トンネル素子 / frequency modulation / linearity / voltage controlled oscillator / quantizer / analog to digital converter / resonant tunnelint / 周波数変調信号 / 線形性 / 電圧制御発振器 / 識別器 / アナログデジタル変換器 / D converter / A / logic gate / integrated circuit / ADコンバータ / 論理ゲート / bifurcation / frequency divider / MMIG / chaos / 分岐 / 分周器 / MMIC / カオス / FM信号 / 振動センサ / 変位センサ / 異種材料デバイス集積技術 / マイクロ・ナノデバイス / パルス / サンプリング / MEMS / テラヘルツ / 表面音響波 / 伝送線路 / 弾性波 / エアブリッジ / 分布定数線路 / 一般化運動量 / 一般化座標 / 量子力学 / トンネル … More
Except Principal Investigator
GaN MISHEMT / GaN HEMT / Al2O3 / MOSFET / ALD / 表面再構成制御成長法 / InSb / SOI基板 / オーバーラップ構造 / 界面準位 / ゲート絶縁膜 / 選択成長 / 表面再構成 / 短チャネル化 / GaSb / InGaSb / Si(111) / T-shaped gate / gate leakage current / miro-Raman / temperature distribution / current collapse / Si_3N_4 / 高温動作 / 電界集中 / EL発光 / 低周波雑音 / 実効電子速度 / 電流しゃ断周波数 / 電子ビーム描画 / ゲートリーク電流 / 顕微ラマン / 温度上昇 / 電流コラプス / Si_3N_4保護膜 / ワイヤレス電力送電 / 暗号化 / 移動体 / 指向性 / パラボラアンテナ / ガウシアンビーム / マイクロ波 / ミリ波 / ワイヤレス電力伝送 / 準光学回路 / マイクロ波送電 / ワイヤレス給電 / Si(111)基板 / FET / MOSダイオード / ヘテロエピタキシャル成長 / Al_2O_3 / ヘテロエピタキシャル / SOI / ヘテロエピタキシー / quasi-pseudomorphic QW-MOSFETs / 防災 / セキュリティ / 2次元伝送平面 / 左手系伝送線路 / マルチバンド / 電磁波照射 / 小型化 / スタブ / 偏波分離器 / ミリ波カメラ Less
  • Research Projects

    (16 results)
  • Research Products

    (260 results)
  • Co-Researchers

    (17 People)
  •  共鳴トンネル発振器を用いた周波数ΔΣ変調方式走査型プローブ顕微鏡Principal Investigator

    • Principal Investigator
      前澤 宏一
    • Project Period (FY)
      2023 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      University of Toyama
  •  High performance sensors based on frequency delta-sigma modulation using a THz oscillatorPrincipal Investigator

    • Principal Investigator
      Maezawa Koichi
    • Project Period (FY)
      2018 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      University of Toyama
  •  Resonant tunneling diodes based on non-crystalline oxide semiconductors for micro/millimeter wave electronicsPrincipal Investigator

    • Principal Investigator
      Koichi Maezawa
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Frequency delta sigma modulation position snsors based on a reflected electromagnetic wave resonancePrincipal Investigator

    • Principal Investigator
      Koichi Maezawa
    • Project Period (FY)
      2014 – 2015
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Studies on THz sampling and signal generation technologies based on MEMS/resonant tunneling diode integrationPrincipal Investigator

    • Principal Investigator
      Maezawa Koichi
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Study of InSb-CMOS on Si subustrate by using surface reconstruction controlled epitaxy

    • Principal Investigator
      Mori Masayuki
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Study on Wireless Power Transmission for Remote Controlled Objects

    • Principal Investigator
      HIROYA Andoh
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Power engineering/Power conversion/Electric machinery
    • Research Institution
      Toyota National College of Technology
  •  Fabrication of InSb-based high-speed and low power devices on Si by using surface reconstruction controlled epitaxy

    • Principal Investigator
      MORI Masayuki
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Spatial frequency locking in integrated quantum effect and elastic wave devices and its applicationsPrincipal Investigator

    • Principal Investigator
      MAEZAWA Koichi
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Active Transmission Lines Loaded with Resonant Tunneling Diodes and Their Application to THz Signal Generation and ProcessingPrincipal Investigator

    • Principal Investigator
      MAEZAWA Koichi
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Study on Portable Devices for Active Millimeter-wave Imaging

    • Principal Investigator
      ANDOH Hiroya
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Measurement engineering
    • Research Institution
      Toyota National College of Technology
  •  Sub-THz sampling AD converters using resonant tunneling diodesPrincipal Investigator

    • Principal Investigator
      MAEZAWA Koichi
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  極微細素子を用いた一般化座標上のトンネル現象の研究Principal Investigator

    • Principal Investigator
      前澤 宏一
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Nagoya University
  •  Ultrahigh frequency integrated circuits using resonant tunneling diodesPrincipal Investigator

    • Principal Investigator
      MAEZAWA Koichi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Nagoya University
  •  Fabrication and Characterization of GaN HEMTs with short gate length

    • Principal Investigator
      MIZUTANI Takashi
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Nagoya University
  •  Study of ultrahigh-frequency signal generation and processing using resonant tunneling chaos devicesPrincipal Investigator

    • Principal Investigator
      MAEZAWA Koichi
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      NAGOYA UNIVERSITY

All 2023 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] Encyclopedia of Electrical and Electronics Engineering, "Resonant Tunneling Diodes"2014

    • Author(s)
      K. Maezawa
    • Total Pages
      14
    • Publisher
      Wiley
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Book] Wiley-VCH2003

    • Author(s)
      K.Maezawa, A Foerster
    • Publisher
      Nanoelectronics and Information Technology
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Experimental Characterization of Resonant Tunneling Chaos Generator Circuits in Microwave Frequency Range2023

    • Author(s)
      FAROOQ Umer、MORI Masayuki、MAEZAWA Koichi
    • Journal Title

      IEICE Trans. Electron.

      Volume: E106.C Issue: 5 Pages: 174-183

    • DOI

      10.1587/transele.2022ECP5037

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2023-05-01
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23K03970
  • [Journal Article] A Novel Displacement Sensor Based on a Frequency Delta-Sigma Modulator and its Application to a Stylus Surface Profiler2023

    • Author(s)
      MAEZAWA Koichi、FAROOQ Umer、MORI Masayuki
    • Journal Title

      IEICE Trans. Electron.

      Volume: E106.C Issue: 9 Pages: 486-490

    • DOI

      10.1587/transele.2022ECS6013

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2023-09-01
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23K03970
  • [Journal Article] Effects of Oscillator Phase Noise on Frequency Delta Sigma Modulators with a High Oversampling Ratio for Sensor Applications2021

    • Author(s)
      MAEZAWA Koichi、MORI Masayuki
    • Journal Title

      IEICE Trans. Electron.

      Volume: E104.C Issue: 9 Pages: 463-466

    • DOI

      10.1587/transele.2020ECS6026

    • NAID

      130008082171

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2021-09-01
    • Language
      English
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Experimental Demonstration of a Hard-Type Oscillator Using a Resonant Tunneling Diode and Its Comparison with a Soft-Type Oscillator2021

    • Author(s)
      MAEZAWA Koichi、ITO Tatsuo、MORI Masayuki
    • Journal Title

      IEICE Trans. Electron.

      Volume: E104.C Issue: 12 Pages: 685-688

    • DOI

      10.1587/transele.2021ECS6002

    • NAID

      130008123357

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2021-12-01
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Transition Dynamics of Multistable Tunnel-Diode Oscillator Used for Effective Amplitude Modulation2021

    • Author(s)
      NARAHARA Koichi、MAEZAWA Koichi
    • Journal Title

      IEICE Trans. Electron.

      Volume: E104.C Issue: 1 Pages: 40-43

    • DOI

      10.1587/transele.2020ECS6012

    • NAID

      130007965112

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2021-01-01
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Noise Floor Reduction in Frequency Delta-Sigma Modulation Microphone Sensors2021

    • Author(s)
      Maezawa Koichi、Mori Masayuki、Andoh Hiroya
    • Journal Title

      Sensors

      Volume: 21 Issue: 10 Pages: 3470-3470

    • DOI

      10.3390/s21103470

    • NAID

      120007036355

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Delta-sigma modulation microphone sensors employing a resonant tunneling diode with a suspended microstrip resonator2020

    • Author(s)
      Maezawa Koichi、Ito Tatsuo、Mori Masayuki
    • Journal Title

      Sensor Review

      Volume: 40 Issue: 5 Pages: 535-542

    • DOI

      10.1108/sr-03-2020-0044

    • NAID

      120006887780

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Study on impedance matching and maximum wireless power transfer efficiency of circuits with resonant coupling based on simplified <i>S</i>-matrix2019

    • Author(s)
      Andoh Hiroya, Tsuzuki Keita, Oikawa Dai, Sugiura Toko, Tsukamoto Takehiko, Maezawa Koichi
    • Journal Title

      IEICE Electron. Express

      Volume: 16 Issue: 11 Pages: 20190156-20190156

    • DOI

      10.1587/elex.16.20190156

    • NAID

      130007661786

    • ISSN
      1349-2543
    • Language
      English
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17K06329, KAKENHI-PROJECT-18H01495
  • [Journal Article] Possibilities of Large Voltage Swing Hard-Type Oscillators Based on Series-Connected Resonant Tunneling Diodes2018

    • Author(s)
      MAEZAWA Koichi、MORI Masayuki
    • Journal Title

      IEICE Trans. Electron.

      Volume: E101.C Issue: 5 Pages: 305-310

    • DOI

      10.1587/transele.E101.C.305

    • NAID

      130006729735

    • ISSN
      0916-8524, 1745-1353
    • Year and Date
      2018-05-01
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Characterization of a hard-type oscillator using series-connected tunnel diodes2018

    • Author(s)
      Narahara Koichi、Maezawa Koichi
    • Journal Title

      IEICE Electron. Express

      Volume: 15 Issue: 10 Pages: 20180355-20180355

    • DOI

      10.1587/elex.15.20180355

    • NAID

      130006744393

    • ISSN
      1349-2543
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Journal Article] Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors2017

    • Author(s)
      Takumi Tajika, Yuichiro Kakutani, Masayuki Mori and Koichi Maezawa
    • Journal Title

      Phys. Status Solidi A

      Volume: 214 Issue: 3 Pages: 1600548-1600548

    • DOI

      10.1002/pssa.201600548

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Journal Article] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method to investigate the impact of high-quality GaSb buffer layer2016

    • Author(s)
      A.A.Mohammad Monzur-Ul-Akhir, Masayuki Mori and Koichi Maezawa
    • Journal Title

      Phys. Status Solidi B

      Volume: 254 Issue: 2

    • DOI

      10.1002/pssb.201600528

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Journal Article] Resonant Tunneling Super Regenerative Detectors Detecting Higher Frequency Signals than Their Free-Running Oscillation Frequency2015

    • Author(s)
      J. Pan, Y. Kakutani, T. Nakayama, M. Mori, K. Maezawa
    • Journal Title

      IEICE Trans. Electron.

      Volume: E98.C Issue: 3 Pages: 260-266

    • DOI

      10.1587/transele.E98.C.260

    • NAID

      130004841713

    • ISSN
      0916-8524, 1745-1353
    • Language
      English
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Journal Article] 溶融Gaバンプを用いたFluidic Self-Assemblyで配置された微小デバイスの熱的信頼性2014

    • Author(s)
      中野純、柴田知明、森田弘樹、坂本宙、森雅之、前澤宏一
    • Journal Title

      電子情報通信学会論文誌 C

      Volume: J97-C Pages: 124-125

    • NAID

      110009798392

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Journal Article] Possibility of THz detection with resonant tunneling super regenerative detectors based on extremely high order harmonics2013

    • Author(s)
      K. Maezawa, J. Pan, D. Wu, Y. Kakutani, J. Nakano, M. Mori
    • Journal Title

      IEICE Electron. Express

      Volume: 10 Issue: 20 Pages: 20130676-20130676

    • DOI

      10.1587/elex.10.20130676

    • NAID

      130003383464

    • ISSN
      1349-2543
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Journal Article] Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes2013

    • Author(s)
      J. Nakano, T. Shibata, H. Morita, H. Sakamoto, M. Mori, K. Maezawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 11R Pages: 116501-116501

    • DOI

      10.7567/jjap.52.116501

    • NAID

      210000143078

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Journal Article] Effective mobility enhancement in Al2O3/InSb/Si quantum well MOSFETs for thin InSb channel layer.2013

    • Author(s)
      T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol.52 Issue: 4S Pages: 04CF01-04CF01

    • DOI

      10.7567/jjap.52.04cf01

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] 半導体の新しいアプリケーションを拓く異種材料デバイス集積化のための  Fluidic Self-Assembly技術2013

    • Author(s)
      前澤宏一
    • Journal Title

      日立国際電気技報

      Volume: 14 Pages: 1-6

    • NAID

      40020009891

    • Data Source
      KAKENHI-PROJECT-25249042
  • [Journal Article] Effective mobility enhancement in Al2O3/InSb/Si quantum well MOSFETs for thin InSb channel layer2013

    • Author(s)
      T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs2012

    • Author(s)
      J. Pan, K. Hayano, M. Mori, K. Maezawa
    • Journal Title

      IEICE Trans. Electron.

      Volume: Vol.E95-C, No.8 Pages: 1385-1388

    • NAID

      10031126703

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Journal Article] Characterization of Al2O3/InSb/Si MOS diode having an various InSb thicknesses grown on Si(111) substrate2012

    • Author(s)
      A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
    • Journal Title

      Semiconductor Science and Technology

      Volume: Vol.27 Issue: 4 Pages: 045007-045007

    • DOI

      10.1088/0268-1242/27/4/045007

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] A Proposal of High-Performance Samplers Based on Resonant Tunneling Diodes2012

    • Author(s)
      K. Maezawa
    • Journal Title

      IEICE Trans. Electron.

      Volume: E95.C Issue: 11 Pages: 1830-1833

    • DOI

      10.1587/transele.E95.C.1830

    • NAID

      10031142830

    • ISSN
      0916-8524, 1745-1353
    • Language
      English
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Journal Article] A Proposal of High-Performance Samplers Based on Resonant Tunneling Diodes2012

    • Author(s)
      K. Maezawa, J. Pan, D. Wu, M. Mori
    • Journal Title

      IEICE Trans. Electron.

      Volume: Vol.E95-C, No.11 Pages: 1830-1833

    • NAID

      10031142830

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Journal Article] Characterization of Al2O3/InSb/Si MOS diode having various InSb thicknesses grown on Si(111) substrates2012

    • Author(s)
      A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
    • Journal Title

      Semiconducter Science and Technology

      Volume: 27

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] Effect of initial In coverage for preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction controlled epitaxy2012

    • Author(s)
      M. Mori, Y. Yasui, K. Nakayama, K. Nakatani, K. Maezawa
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51

    • NAID

      210000140253

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] The effects of deposition conditions of InSb first layer on electrical properties of n-type InSb films grown with two step growth method via InSb bilayer2011

    • Author(s)
      S. Khamseh, Y. Yasui, K. Nakayama, K. Nakatani, M. Mori, K. Maezawa
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] The effect of initial In coverage for preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction ontrolled epitaxy2011

    • Author(s)
      M.Mori, Y.Yasui, K.Nakayama, K.Nakatani, K.Maezawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 51 Issue: 2S Pages: 02BH03-02BH03

    • DOI

      10.1143/jjap.51.02bh03

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] Step hall measurement of InSb films grown on Si(111) substrate using InSb bi-layer2011

    • Author(s)
      K. Nakayama, K. Nakatani, S. Khamseh, M. Mori, K. Maezawa
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] The effects of deposition conditions of InSb first layer on electrical properties of n-type InSb films grown with two step growth method via InSb bilayer2011

    • Author(s)
      S.Khamseh, Y.Yasui, K.Nakayama, K.Nakatani, M.Mori, K.Maezawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 50 Issue: 4S Pages: 04DH13-04DH13

    • DOI

      10.1143/jjap.50.04dh13

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer2010

    • Author(s)
      M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
    • Journal Title

      Physics Procedia

      Volume: 3 Pages: 1335-1339

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] A Third order harmonic oscillator based on coupled resonant tunneling diode pair oscillators2010

    • Author(s)
      K.Maezawa, T.Ohe, K.Kasahara, M.Mori
    • Journal Title

      IEICE Transactions Electronics

      Volume: E93-C Pages: 1290-1294

    • NAID

      10027365925

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Journal Article] 共鳴トンネルダイオードを生かす新しい集積化技術2010

    • Author(s)
      前澤宏一
    • Journal Title

      応用物理 79

      Pages: 239-242

    • NAID

      10026199548

    • Data Source
      KAKENHI-PROJECT-20360155
  • [Journal Article] A Third order harmonic oscillator based on coupled resonant tunneling diode pair oscillators2010

    • Author(s)
      前澤宏一, T.Ohe, K.Kasahara, M.Mori
    • Journal Title

      IETCE Transactions Electronics Vol.E93-C, No.8

      Pages: 1290-1294

    • NAID

      10027365925

    • Data Source
      KAKENHI-PROJECT-20360155
  • [Journal Article] Improved Bias Stability of the Resonant Tunneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate2009

    • Author(s)
      K.Maezawa, N.Kamegai, S.Kishimoto, T.Mizutani, K.Akamatsu
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      210000066595

    • Data Source
      KAKENHI-PROJECT-20360155
  • [Journal Article] Possibility of Terahertz Amplification by Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs2009

    • Author(s)
      K.Maezawa, T.Sakamoto, K.Kasahara, M.Mori
    • Journal Title

      Jpn.J.Appl.Phys. 48

      Pages: 124503-124503

    • NAID

      40016890502

    • Data Source
      KAKENHI-PROJECT-20360155
  • [Journal Article] Improved Bias Stability of the Resonant Tunnneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate2009

    • Author(s)
      K.Maezawa, N.Kamegai, S.Kishimoto, T.Mizutani, K.Akamatsu
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006

    • Author(s)
      前澤、酒向、松原、水谷、松崎
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 3410-3413

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006

    • Author(s)
      K, Maezawa, M, Sakou, W, Matsubara, T, Mizutani, H, Matsuzaki
    • Journal Title

      Jpn. J. Appl. Phys No. 45

      Pages: 3410-3413

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
    • Journal Title

      Jpn. J. Appl. Phys. Vol.45

      Pages: 3410-3413

    • Data Source
      KAKENHI-PROJECT-18360168
  • [Journal Article] Resonant tunneling delta sigma modulator suitable for high-speed operation2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
    • Journal Title

      Electron.Lett. Vol.42, No.2

      Pages: 77-78

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Dual-clock MASH delta-sigma modulator employing a frequency modulated intermediate signal2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
    • Journal Title

      IEICE ELEX Vol.3 No.21

      Pages: 459-463

    • NAID

      130000088329

    • Data Source
      KAKENHI-PROJECT-18360168
  • [Journal Article] Resonant tunneling delta sigma modulator suitable for high-speed operation2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
    • Journal Title

      Electronics Lett. 42

      Pages: 77-78

    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
    • Journal Title

      Jpn.J.Appl.Phys 46(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Dual-clock MASH delta-sigma modulator employing a frequency modulated intermediate signal2006

    • Author(s)
      K, Maezawa, M, Sakou, W, Matsubara, T, Mizutani
    • Journal Title

      IEICE ELEX Vol. 3, No. 21

      Pages: 459-463

    • NAID

      130000088329

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
    • Journal Title

      Jpn.J.Appl.Phys. (accepted for publication

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Dual-clock MASH delta-sigma modulator employing a frequency modulated intermediate signal2006

    • Author(s)
      前澤、酒向、松原、水谷
    • Journal Title

      IEICE ELEX 3

      Pages: 459-463

    • NAID

      130000088329

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Journal Article] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band A/D Converters2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani, H.Matsuzaki
    • Journal Title

      Jpn.J.Appl.Phys. 46(掲載予定)

    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Resonant tunneling delta sigma modulator suitable for high-speed operation2006

    • Author(s)
      K.Maezawa, M.Sakou, W.Matsubara, T.Mizutani
    • Journal Title

      Electron.Lett. 42

      Pages: 77-78

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Controlling high-frequency chaos in resonant tunneling chaos generator circuits2005

    • Author(s)
      K.Maezawa, Y.Komoto, S.Kishimoto, T.Mizutani, M.Takakusaki, H.Nakata
    • Journal Title

      IEICE ELEX Vol.2 No.12(June 25, 2005)

      Pages: 368-372

    • NAID

      130000088148

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs2005

    • Author(s)
      K.Maezawa, T.Iwase, Y.Ohno, S.Kishimoto, T.Mizutani, K.Sano, M.Takakusaki, H.Nakata
    • Journal Title

      Jpn.J.Appl.Phys. 45

      Pages: 4790-4794

    • NAID

      10016608254

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] New Era of Negative Differential Resistance Devices (Invited Paper)2005

    • Author(s)
      K.Maezawa
    • Journal Title

      Trans.IEICE (C) Vol.J88-C

      Pages: 295-302

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] 負性抵抗デバイスの新時代 --共鳴トンネル素子を中心とした超高周波応用の新展開-- [招待論文]2005

    • Author(s)
      前澤宏一
    • Journal Title

      電子情報通信学会論文誌(C) Vol.J88-C

      Pages: 295-302

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] 負性抵抗デバイスの新時代-共鳴トンネル素子を中心とした超高周波応用の新展開-2005

    • Author(s)
      前澤宏一
    • Journal Title

      電子情報通信学会 和文論文誌C J88-C(掲載予定)

    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs2005

    • Author(s)
      K.Maezawa, T.Iwase, Y.Ohno, S.Kishimoto, T.Mizutani, M.Takakusaki, H.Nakata
    • Journal Title

      Jpn.J.Appl.Phys. 45

      Pages: 4790-4794

    • NAID

      10016608254

    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Controlling high-frequency chaos in resonant tunneling chaos generator circuits2005

    • Author(s)
      K.Maezawa, Y.Komoto, S.Kishimoto, T.Mizutani, M.Takakusaki, H.Nakata
    • Journal Title

      IEICE ELEX 2

      Pages: 368-372

    • NAID

      130000088148

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] 負性抵抗デバイスの新時代--共鳴トンネル素子を中心とした超高周波応用の新展開--2005

    • Author(s)
      前澤宏一
    • Journal Title

      電子情報通信学会 和文論文誌C J88-C(掲載予定)

    • Data Source
      KAKENHI-PROJECT-15656087
  • [Journal Article] Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs2005

    • Author(s)
      K.Maezawa, T.Iwase, Y.Ohno, S.Kishimoto, T.Mizutani, K.Sano, M.Takakusaki, H.Nakata
    • Journal Title

      Jpn.J.Appl.Phys. Vol.45

      Pages: 4790-4794

    • NAID

      10016608254

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator2004

    • Author(s)
      K.Maezawa, Y.Kawano, Y.Ohno, S.Kishimoto, T.Mizutani
    • Journal Title

      Jpn.J.Appl.Phys. 43

      Pages: 5235-5238

    • NAID

      10013469796

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator2004

    • Author(s)
      K.Maezawa, Y.Kawano, Y.Ohno, S.Kishimoto, T.Mizutani
    • Journal Title

      Jpn.J.Appl.Phys. Vol.43

      Pages: 5235-5238

    • NAID

      10013469796

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator2004

    • Author(s)
      K.Maezawa, Y.Kawano, Y.Ohno, S.Kishimoto, T.Mizatani
    • Journal Title

      Jpn.J.Appl.Phys. 43

      Pages: 5235-5238

    • NAID

      10013469796

    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Experimental Demonstration of a Resonant Tunneling Delta-Sigma Modulator for High-Speed, High-Resolution Analog-to-Digital Converter2003

    • Author(s)
      Y.Yokoyama, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
    • Journal Title

      Inst.Phys.Conf.Ser. No.174

      Pages: 243-246

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Experimental demonstration of capacitor-coupled resonant tunneling logic gates for ultra-short gate-delay operation2003

    • Author(s)
      T.Tanaka, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
    • Journal Title

      Jpn.J.Appl.Phys. Vol.42

      Pages: 6766-6771

    • NAID

      10012563634

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] 88 GHz Dynamic 2 : 1 Frequency Divider Using Resonant Tunneling Chaos Circuit2003

    • Author(s)
      Y.Kawano, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
    • Journal Title

      Electron.Lett. 39

      Pages: 1546-1547

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Experimental Demonstration of a Resonant Tunneling Delta-Sigma Modulator for High-Speed, High-Resolution Analog-to-Digital Converter2003

    • Author(s)
      Y.Yokoyama, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
    • Journal Title

      Inst.Phys.Conf.Ser. 174

      Pages: 243-246

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Experimental demonstration of capacitor-coupled resonant tunneling logic gates for ultra-short gate-delay operation2003

    • Author(s)
      T.Tanaka, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
    • Journal Title

      Jpn.J.Appl.Phys. 42

      Pages: 6766-6771

    • NAID

      10012563634

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] 88 GHz Dynamic 2:1 Frequency Divider Using Resonant Tunneling Chaos Circuit2003

    • Author(s)
      Y.Kawano, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, K.Sano
    • Journal Title

      Electron.Lett. Vol.39

      Pages: 1546-1547

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Journal Article] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate

    • Author(s)
      T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
    • Journal Title

      Physics Procedia

      Volume: 3 Pages: 1329-1333

    • Data Source
      KAKENHI-PROJECT-22560323
  • [Journal Article] A Forester, Wiley-VCH

    • Author(s)
      K.Maezawa
    • Journal Title

      Nanoelectronics and Information Technology

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Patent] 位相シフタ2015

    • Inventor(s)
      前澤宏一
    • Industrial Property Rights Holder
      前澤宏一
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-033217
    • Filing Date
      2015-02-23
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Patent] デジタルマイクロフォン2008

    • Inventor(s)
      前澤、本林
    • Industrial Property Rights Holder
      富山大学・(株)オーディオテクニカ
    • Industrial Property Number
      2008-060529
    • Filing Date
      2008
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Patent] ΔΣ型モジュレータ及びΔΣ型AD変換器2006

    • Inventor(s)
      前澤, 水谷
    • Industrial Property Rights Holder
      JST
    • Filing Date
      2006-02-10
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Patent] 国際特許 PCT出願2006

    • Inventor(s)
      前澤 宏一, 水谷 孝
    • Industrial Property Rights Holder
      名古屋大学
    • Filing Date
      2006-02-10
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Patent] ΔΣ型モジュレータ及びΔΣ型AD変換器2005

    • Inventor(s)
      前澤, 水谷
    • Industrial Property Rights Holder
      中部TLO
    • Industrial Property Number
      2005-035196
    • Filing Date
      2005-02-10
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Patent] 信号生成回路2004

    • Inventor(s)
      前澤, 水谷
    • Industrial Property Rights Holder
      JST
    • Filing Date
      2004-05-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Patent] N型負性抵抗素子を有する回路2004

    • Inventor(s)
      前澤, 水谷
    • Industrial Property Rights Holder
      JST
    • Industrial Property Number
      2004-147736
    • Filing Date
      2004-05-18
    • Data Source
      KAKENHI-PROJECT-15360187
  • [Presentation] 共鳴トンネル素子を用いた硬い発振器の発振初期過程の観測2023

    • Author(s)
      中村浩輔、森雅之、前澤宏一
    • Organizer
      令和5年度応用物理学会北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03970
  • [Presentation] 共鳴トンネル素子と周波数ΔΣ変調方式を用いた走査型マイクロ波近接場顕微鏡の提案2023

    • Author(s)
      清水晴喜、森雅之、前澤宏一
    • Organizer
      令和5年度応用物理学会北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03970
  • [Presentation] 周波数ΔΣ方式走査型近接場マイクロ波顕微鏡の実験的検証2023

    • Author(s)
      前澤 宏一, 森 雅之
    • Organizer
      Future Technologies from KUMAMOTO、第15回集積化MEMSシンポジウム
    • Data Source
      KAKENHI-PROJECT-23K03970
  • [Presentation] A microwave chaos generator circuit employing a resonant tunneling diode2021

    • Author(s)
      Umer Farooq, Masayuki Mori, Koichi Maezawa
    • Organizer
      2nd International Electronic Conference (IEC2021) - Enabling Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 共鳴トンネルダイオードを用いた周波数ΔΣ方式マイクロフォンセ ンサの 実験的検証2021

    • Author(s)
      相澤 一仙、 森 雅之、 前澤 宏一
    • Organizer
      令和3年度(2021年)応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 周波数ΔΣ変調方式変位センサを用いたAFM/表面粗さ計の可能性2021

    • Author(s)
      前澤 宏一, 森 雅之
    • Organizer
      Future Technologies from HIMEJI 2021、第13回集積化MEMSシンポジウム
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Resonant tunneling hard-type oscillators for THz applications2021

    • Author(s)
      Koichi Maezawa, Masayuki Mori, Hiroya Andoh, and Taiichi Otsuji
    • Organizer
      東北大学 電気通信研究所 令和2年度共同プロジェクト研究発表会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] TE113モードを用いたFMΔΣ変調方式マイクロフォンセンサの特性評価2021

    • Author(s)
      中干場 翔伍、森 雅之、前澤 宏一
    • Organizer
      令和3年度(2021年)応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Fluidic Self-Assembly用Geバンプ接続のマイクロ波/ミリ波特性について2020

    • Author(s)
      大寺悠介、森雅之、前澤宏一
    • Organizer
      令和2年度(2020年)応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] ループフィードバック型発振器を用いた周波数ΔΣマイクロフォンセンサの検討2020

    • Author(s)
      田端一貴、森雅之、前澤宏一
    • Organizer
      令和2年度(2020年)応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 周波数ΔΣ変調方式センサにおける位相ノイズのシンプルなモデル化とその実験的検証2020

    • Author(s)
      前澤 宏一, 森 雅之
    • Organizer
      Future Technologies from KUMAMOTO ONLINE、第12回集積化MEMSシンポジウム
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Resonant tunneling diode oscillators for high performance sensors2020

    • Author(s)
      Koichi Maezawa
    • Organizer
      東北大学 電気通信研究所 令和元年度共同プロジェクト研究発表会
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Resonant Tunneling Chaos Generator on a Printed Circuit Board (PCB) Employing Bonding Wires for High Quality Inductors2020

    • Author(s)
      UMER Farooq, Masayuki MORI, Koichi MAEZAWA
    • Organizer
      令和2年度(2020年)応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 共鳴トンネルダイオードを用いたハードタイプ発振器の位相ノイズ特性評価2020

    • Author(s)
      伊藤多津生、森雅之、前澤宏一
    • Organizer
      令和2年度(2020年)応用物理学会 北陸・信越支部 学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Resonant Tunneling Delta Sigma Modulation Ultrasound Sensors Using A Suspended Microstrip Disk Resonator2019

    • Author(s)
      Koichi Maezawa and Masayuki Mori
    • Organizer
      13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 共鳴トンネルダイオード発振器の回路構成と回路パラメータの位相ノイズへの影響2019

    • Author(s)
      吉田素将、森 雅之、前澤宏一
    • Organizer
      令和元年度応用物理学会北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Spurious Free Oscillations of the Resonant Tunneling Hard-Type Oscillators Having a Simple Capacitor Coupled Trigger Input2019

    • Author(s)
      Tatsuo Ito, Masayuki, Mori and Koichi Maezawa
    • Organizer
      13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 周波数⊿Σ型振動センサ―用発振器に対する基板歪みの効果2019

    • Author(s)
      本村彰啓、前澤宏一、森 雅之
    • Organizer
      令和元年度応用物理学会北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 周波数⊿Σ変調方式センサに対する発振器位相ノイズの影響2019

    • Author(s)
      前澤宏一、森雅之
    • Organizer
      電子情報通信学会、電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 周波数ΔΣ変調型センサのための10GS/s FPGA測定系の構築2018

    • Author(s)
      前澤宏一、山岡昂博、森雅之
    • Organizer
      電子情報通信学会、 電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 共鳴トンネルダイオードを用いた硬い発振器2018

    • Author(s)
      吉田素将、森雅之、前澤宏一
    • Organizer
      第4回有機・無機エレクトロニクスシンポジウム
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 塗布型酸化物半導体共鳴トンネル素子のためのIn2O3/Ga2O3/In2O3 ninダイオードの評価2018

    • Author(s)
      遠矢浩士、森雅之、前澤宏一
    • Organizer
      第10回集積化MEMSシンポジウム
    • Data Source
      KAKENHI-PROJECT-16K14252
  • [Presentation] 1-MHz strain detection using resonant tunneling delta-sigma modulation sensors2018

    • Author(s)
      K. Maezawa, T. Tajika, M. Mori
    • Organizer
      2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 周波数⊿Σ変換方式を用いたマイクロフォンセンサの帯域内雑音低減2018

    • Author(s)
      村谷龍星、前澤宏一、森雅之
    • Organizer
      平成30年度応用物理学会北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 空洞共振器を用いた周波数⊿Σ型振動センサの提案2018

    • Author(s)
      本村彰啓、前澤宏一、島田知輝、山川雅輝、村谷龍星、森雅之
    • Organizer
      平成30年度応用物理学会北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] Resonant tunneling hard-type oscillators having a Schottky diode trigger circuit for stable and large voltage swing operation2018

    • Author(s)
      Koichi Maezawa, Motoyuki Yoshida, Masayuki Mori
    • Organizer
      The 42nd Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01495
  • [Presentation] 共鳴トンネル素子を装荷した伝送線路発振器の高調波生成に関する線形モデル解析2017

    • Author(s)
      前澤宏一、岸 拓郎、森 雅之
    • Organizer
      電子情報通信学会、電子デバイス研究会
    • Place of Presentation
      札幌
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Fluidic Self-Assembly高効率化実験のためのダミーブロック作製2016

    • Author(s)
      高山一希、中野友寛、水戸俊宏、森雅之、前澤宏一
    • Organizer
      平成28年応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 周波数ΔΣ変調方式を用いた共鳴トンネル歪センサ2016

    • Author(s)
      前澤 宏一,角谷 祐一郎,田近 拓巳,森 雅之
    • Organizer
      集積化 MEMSシンポジウム
    • Place of Presentation
      平戸
    • Year and Date
      2016-10-24
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method2016

    • Author(s)
      A.A.Md.Monzur-Ul-Akhir, Masayuki Mori, and Koichi Maezawa
    • Organizer
      43rd International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      富山国際会議場
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Experimental Demonstration of Strain Detection Using Resonant Tunneling Delta-Sigma Modulation Sensors2016

    • Author(s)
      Takumi Tajika, Yuichiro Kakutani, Masayuki Mori and Koichi Maezawa
    • Organizer
      43rd International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 共鳴トンネル素子を用いた超高周波回路とその集積技術2016

    • Author(s)
      前澤宏一
    • Organizer
      有機・無機エレクトロニクスシンポジウム
    • Place of Presentation
      金沢
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Impulse sensitivity function study of the phase noise in resonant tunneling diode oscillators2016

    • Author(s)
      K. Maezawa and M. Mori
    • Organizer
      2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)
    • Place of Presentation
      Hakodate, Japan
    • Year and Date
      2016-06-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 周波数ΔΣ変調方式センサに対する位相ノイズの効果2016

    • Author(s)
      前澤宏一、藤野舜也、山岡昂博、森雅之
    • Organizer
      2016年電子情報通信学会総合大会
    • Place of Presentation
      九州大学 伊都キャンパス
    • Year and Date
      2016-03-15
    • Data Source
      KAKENHI-PROJECT-26630154
  • [Presentation] Ge(111)基板上へのInSb薄膜のエピタキシャル成長2016

    • Author(s)
      三枝孝彰、森雅之、前澤宏一
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      首都大学東京
    • Year and Date
      2016-07-23
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] 共鳴トンネル素子装荷伝送線路を用いた高次高調波発振器の設計指針と注入同期2016

    • Author(s)
      前澤宏一、岸拓郎、森雅之
    • Organizer
      2016年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      札幌
    • Year and Date
      2016-09-20
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 周波数ΔΣ変調器のデジタル出力センサへの応用2016

    • Author(s)
      前澤宏一、藤野舜也、山岡昂博、山川雅暉、島田知輝、角谷祐一郎、田近拓巳、森 雅之
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2016-08-09
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] HEMTと空洞共振器を用いたΔΣ型マイクロフォンセンサ2016

    • Author(s)
      山岡昂博、藤野舜也、山岸凌、山川雅暉、島田知輝、森雅之、前澤宏一
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Year and Date
      2016-03-03
    • Data Source
      KAKENHI-PROJECT-26630154
  • [Presentation] Effect of growth condition of buffer layer for heteroepitaxial InSb films grown on Ge(111) substrate2016

    • Author(s)
      Takaaki Mitsueda, Masayuki Mori, and Koichi Maezawa
    • Organizer
      43rd International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      富山国際会議場
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Injection Locking and High Order Harmonic Generation in Transmission Line Oscillators Loaded with Resonant Tunneling Diodes2016

    • Author(s)
      Koichi Maezawa, Takuro Kishi and Masayuki Mori
    • Organizer
      40th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe(WOCSDICE)
    • Place of Presentation
      Aveiro, Portugal
    • Year and Date
      2016-06-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Heteroepitaxial growth of InGaSbon HQ GaSb on Si(111) by two step growth method2016

    • Author(s)
      A.A.Md. Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa
    • Organizer
      平成28年応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山県民会館
    • Year and Date
      2016-12-10
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Ga溶融バンプを用いたFluidic Self Assemblyによる異種材料集積化技術2015

    • Author(s)
      前澤宏一、中野 純、柴田知明、森田弘樹、坂本宙、山田悟史、森雅之
    • Organizer
      電子情報通信学会信頼性(R)研究会
    • Place of Presentation
      青森
    • Year and Date
      2015-08-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Ultrahigh frequency circuits and a novel integration technology for resonant tunneling diodes2015

    • Author(s)
      Koichi Maezawa
    • Organizer
      The 6th International Conference on Integrated Circuits, Design, and Verification (ICDV 2015)/2015 Vietnam Japan MicroWave (VJMW 2015)
    • Place of Presentation
      Ho Chi Minh City, Vietnam
    • Year and Date
      2015-08-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] ΔΣ型歪センサのためのRTD装荷カンチレバーの検討2015

    • Author(s)
      角谷祐一郎、森雅之、前澤宏一
    • Organizer
      2015年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      東北大学川内北キャンパス
    • Year and Date
      2015-09-08
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] InP HEMT micro blocks transplanted on Si substrates using Ga micro bumps2015

    • Author(s)
      Satoshi Yamada, Hiroshi Sakamoto, Jun Nakano, Masayuki Mori and Koichi Maezawa
    • Organizer
      Topical Workshop on Heterostructure Microelectronics 2015 (TWHM 2015)
    • Place of Presentation
      Takayama, Gifu
    • Year and Date
      2015-08-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] A resonant tunneling delta-sigma modulator and its application to strain sensors2015

    • Author(s)
      K. Maezawa, Y. Kakutani, T. Nakayama, T. Tajika, M. Mori
    • Organizer
      2015 Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015)
    • Place of Presentation
      Smolenice, Slovakia
    • Year and Date
      2015-06-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630154
  • [Presentation] MOSFETs Based on InSb/Si (111) Heterostructures Having Various Oxide Layers2015

    • Author(s)
      F. Shimizu, K. Hosotani, T. Ito, M. Mori, K. Maezawa
    • Organizer
      2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
    • Place of Presentation
      Jeju Island, Korea
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase2015

    • Author(s)
      H. Shimoyama, M. Mori, K. Maezawa
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM 2015)
    • Place of Presentation
      Sapporo, Hokkaido
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Proposal of a Simple MEMS Phase Shifter Based on Effective Dielectric Constant Modulation2015

    • Author(s)
      D. Nakano, M. Mori, K. Maezawa, H. Ishii, H. Andoh
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM 2015)
    • Place of Presentation
      Sapporo, Hokkaido
    • Year and Date
      2015-09-27
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Heteroepitaxial growth of InSb films on Si(100) substrate with micro facet structures2015

    • Author(s)
      E. Umemura, M. Mori, T. Sakamoto, H. Shimoyama, K. Maezawa
    • Organizer
      The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      Toki-messe, Niigata
    • Year and Date
      2015-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] A Resonant Tunneling Super Regenerative Detector with Input/Output Isolation and Improved Sensitivity2015

    • Author(s)
      K. Hu, J. Pan, M. Mori, K. Maezawa
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM 2015)
    • Place of Presentation
      Sapporo, Hokkaido
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 共鳴トンネル素子を用いたΔΣ型歪みセンサ2015

    • Author(s)
      前澤宏一、角谷祐一郎、中山大周、田近拓巳、森雅之
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      金沢市
    • Year and Date
      2015-07-25
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] ナノデバイスの強い非線形性とその超高周波集積回路への応用2015

    • Author(s)
      前澤宏一
    • Organizer
      第2回可視化情報学会・可視化共感型防災教育研究会
    • Place of Presentation
      富山大学
    • Year and Date
      2015-03-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] ΔΣ型歪センサのためのRTD装荷カンチレバーの検討2015

    • Author(s)
      角谷祐一郎、森雅之、前澤宏一
    • Organizer
      2015年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      東北大学川内北キャンパス
    • Year and Date
      2015-09-08
    • Data Source
      KAKENHI-PROJECT-26630154
  • [Presentation] 共鳴トンネル素子を用いたΔΣ型歪みセンサ2015

    • Author(s)
      前澤宏一、角谷祐一郎、中山大周、田近拓巳、森雅之
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      金沢市
    • Year and Date
      2015-07-25
    • Data Source
      KAKENHI-PROJECT-26630154
  • [Presentation] 共鳴トンネル発振器のセンサー応用2014

    • Author(s)
      前澤宏一、潘 杰、角谷祐一郎、中野 純、森 雅之
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 高性能共鳴トンネルダイオードのための溶融ガリウムバンプを用いたFluidic Self-Assembly2013

    • Author(s)
      中野純、柴田知明、森田弘樹、坂本宙、森雅之、前澤宏一
    • Organizer
      電子情報通信学会、電子デバイス研究会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction2013

    • Author(s)
      X. Wang, M. Mori, K. Maezawa
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
    • Place of Presentation
      Ishikawa Ongakudo, Kanazawa, Ishikawa
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] トンネルデバイスを用いたテラヘルツ帯信号処理の可能性2013

    • Author(s)
      前澤宏一
    • Organizer
      2013年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      岐阜大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Low resistance ohmic contacts to n-InSb employing Sn-alloys2013

    • Author(s)
      K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa
    • Organizer
      The 2013 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      Kansai Univ. Centenary Memorial Hall, Osaka
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Growth of InSb thin films on a V-grooved Si(001) substrate2013

    • Author(s)
      H. Shimoyama, Y. Yasui, T. Sakamoto, M. Mori, K. Maezawa
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
    • Place of Presentation
      Ishikawa Ongakudo, Kanazawa, Ishikawa
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] 異種材料デバイス集積化のための低融点金属バンプの信頼性2013

    • Author(s)
      坂本宙、中野純、柴田知明、森田弘樹、森雅之、前澤宏一
    • Organizer
      応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢工業大学
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 溝(111)面を形成したSi(100)基板上へのInSb薄膜の成長2013

    • Author(s)
      下山浩哉、森雅之、前澤宏一.
    • Organizer
      2013年(平成25年)秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Selective growth of InSb using Sb-induced surface reconstruction on Si(111) substrate by molecular beam epitaxy2013

    • Author(s)
      M. Mori, X. Wang, K. Maezawa
    • Organizer
      12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)
    • Place of Presentation
      Tsukuba International Congress Center, Tukuba
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Heteroepitaxial growth of InSb thin films on a Silicon-on-Insulator substrate2013

    • Author(s)
      T. Sakamoto, H. Shimoyama, Y. Yasui, M. Mori, K. Maezawa
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM 2013)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] 共鳴トンネルダイオードを用いた極短パルス生成器の高出力化2013

    • Author(s)
      呉東坡、水牧勝太郎、潘杰、森雅之、前澤宏一
    • Organizer
      電子情報通信学会、電子デバイス研究会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Si(111)上のSb再構成構造を利用したInSbの選択成長2013

    • Author(s)
      王昕、森雅之、前澤宏一
    • Organizer
      電子情報通信学会、電子デバイス研究会(ED)
    • Place of Presentation
      富山大学工学部
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Fabrication and characterization of micromachined cantilever loaded with a resonant tunneling diode for delta-sigma type strain sensor applications2013

    • Author(s)
      Y. Kakutani, Dongpo Wu, J. Pan, J. Nakano, M. Mori, K. Maezawa
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Fukuoka
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Si基板上に直接成長した極薄InSb膜をチャネルとしたAl2O3/InSb MOSFET2013

    • Author(s)
      前澤宏一、伊藤泰平、角田梓、中山幸二、安井雄一郎、森雅之、宮崎英志、水谷孝
    • Organizer
      電子情報通信学会、電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] InSb quantum well MOSFETs based on ultra thin InSb layers grown directly on Si2013

    • Author(s)
      K. Maezawa
    • Organizer
      The 37th Workshop on Copound Semiconductor Devices and Integrated Circuits
    • Place of Presentation
      Warnemunde, Germany
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] RF large signal characterization of active transmission lines loaded with InGaAs/AlAs resonant tunneling diode pairs2013

    • Author(s)
      J. Pan, D. Wu, M. Mori, K. Maezawa
    • Organizer
      Topical Workshop on Heterostructure Microelectronics
    • Place of Presentation
      Hakodate
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Heteroepitaxial growth of AlInSb on a Si(111) substrate using surface reconstruction controlled epitaxy2012

    • Author(s)
      M. Mori, Y. Yasui, N. Nakayama, M. Miura, K. Maezawa
    • Organizer
      the 17thInternational Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara Prefectural New Public Hall, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 共鳴トンネル素子を用いた装荷したアクティブ伝送線路を用いた高次高調波発振器の可能性2012

    • Author(s)
      潘傑、早野一樹、森雅之、前澤宏一
    • Organizer
      電子情報通信学会、電子デバイス研究会(ED)報告ED2011-147, 31-34
    • Place of Presentation
      札幌
    • Year and Date
      2012-02-07
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Al2O3/InSb/Si quantum well MOSFETs having ultra-thin InSb layer2012

    • Author(s)
      K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M.Mori, E. Miyazaki, T. Mizutani
    • Organizer
      Device research conference 2012 (DRC)
    • Place of Presentation
      Penn State Univ. PA (USA)
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] High electron mobility InSb film on Si grown by surface reconstruction controlled epitaxy and its application for MOSFETs2012

    • Author(s)
      M. Mori, Y. Yasui, K. Nakayama, A. Kadoda, T. Ito, K. Maezawa, C. Tatsuyama
    • Organizer
      the 10thJapan-Russia Seminar on Semiconductor Surfaces (JRSSS-10)
    • Place of Presentation
      Univ. of Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Heteroepitaxial growth of AlInSb on a Si(111) substrate using surface reconstruction controlled epitaxy2012

    • Author(s)
      M. Mori, Y. Yasui, K. Nakayama, M. Miura, K. Maezawa
    • Organizer
      The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara Prefectural New PublicHall, Nara
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] High electron mobility InSb film on Si grown by surface reconstruction controlled epitaxy and its application for MOSFETs.2012

    • Author(s)
      M. Mori, Y. Yasui, K. Nakayama, A. Kadoda, T. Ito, K. Maezawa, C. Tatsuyama
    • Organizer
      The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS10)
    • Place of Presentation
      Univ. of Tokyo, Hongo
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 共鳴トンネル素子を活かす集積化技術とTHz信号処理への挑戦2012

    • Author(s)
      前澤宏一
    • Organizer
      電気学会「シリコンナノデバイス集積化技術」調査専門委員会、「クラウド時代のユビキタス電子デバイス」調査専門委員会 合同委員会
    • Place of Presentation
      法政大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Al2O3/InSb/MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrate using surface reconstruction controlled epitaxy.2012

    • Author(s)
      K. Maezawa, A. Kadoda, T. Ito, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani
    • Organizer
      11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC)
    • Place of Presentation
      Island of Porquerolles (FRANCE)
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Al2O3/InSb/Si quantum well MOSFETs having ultra-thin InSb layer2012

    • Author(s)
      K. Maezawa, T. Ito, A. Kadoda, N. Nakayama, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani
    • Organizer
      Device Research Conference (DRC)
    • Place of Presentation
      Penn State Univ. (USA)
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] n-InSbに対するSn系オーミック電極の検討2012

    • Author(s)
      細谷耕右、伊藤泰平、安井雄一郎、中山幸二、角田梓、森雅之、前澤宏一
    • Organizer
      応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山県民会館
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Effective mobility enhanement in Al2O3/InSb/Si quantum well MOSFETs2012

    • Author(s)
      T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
    • Organizer
      2012 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Effective mobility enhancement in Al2O3/InSb/Si quantum well MOSFETs for thin InSb channel layer2012

    • Author(s)
      T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Al2O3/InSb/Si MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrates using surface reconstruction controlled epitaxy2012

    • Author(s)
      K. Maezawa, A. Kadoda, T. Ito, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani
    • Organizer
      11thExpart Evaluation & Control of Compound Seiconductors Materials & Technologies (EXMATEC)
    • Place of Presentation
      Island of Porquerolles (France)
    • Year and Date
      2012-05-30
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] n-InSbに対するSn系オーミック電極の検討2011

    • Author(s)
      細谷耕右、伊藤泰平、安井雄一郎、中山幸二、角田梓、森雅之、前澤宏一
    • Organizer
      平成24年応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山県民会館
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 表面再構成制御成長法を用いたSi(111)基板上のInSb MOSダイオードの作製2011

    • Author(s)
      角田梓、岩杉達矢、中谷公彦、中山幸二、森雅之、前澤宏一
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      長岡技術科学大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Possibility of High Order Harmonic Oscillatoers Based on Active Trans mission Lines Loaded with Resonant Tunneling Diode Pairs2011

    • Author(s)
      K.Maezawa, T.Ohe, K.Kasahara, M.Mori
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM 2011)
    • Place of Presentation
      Gifu, Japan
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] ETDpair発振器の発振周波数に対する測定系の影響2011

    • Author(s)
      早野、森、前澤
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      札幌
    • Year and Date
      2011-09-13
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] High Frequency Oscillators based on Active Trahsmission Lines Loaded with Resonant Tunnehng Diode Pairs2011

    • Author(s)
      潘杰、森雅之、前澤宏一
    • Organizer
      2011年電子情報通信学会総合大会
    • Place of Presentation
      東京都立大学
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] 共鳴トンネルダイオードペアを装荷した右手/左手系複合伝送線路における信号増幅2011

    • Author(s)
      前澤宏一、笠原康司、潘杰、森雅之
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 表面再構成制御成長法を用いた高移動度InSb薄膜の成長2011

    • Author(s)
      森雅之、中山幸二、中谷公彦、安井雄一郎、前澤宏一
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] InSb単分子層を介したSi基板上への高移動度InSb薄膜の作製2011

    • Author(s)
      中山浩二、安井雄一郎、中谷公彦、森雅之、前澤宏一
    • Organizer
      2011年電気学会電子・情報システム部門大会
    • Place of Presentation
      富山大
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] An Al2O3/InSb/Si MOS diode having an ultra-thin InSb layer2011

    • Author(s)
      A. Kadoda, T. Iwasugi, K. Nakatani ,K. Nakayama, M. Mori, K. Maezawa
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011)
    • Place of Presentation
      Nagoya, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 共鳴トンネルダイオードペアを装荷した右手/左手系複合伝送線路における信号増幅2011

    • Author(s)
      前澤宏一、笠原康司、播杰、森雅之
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] An Al2O2/InSb/Si MOS diode having an ultra-thin InSb layer2011

    • Author(s)
      A.Kadoda, T.Iwasugi, L, Nakatani, K.Nakayama, M.Mori, K.Maezawa, E.Miyazaki, T.Mizutani
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2011-09-29
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Si上高移動度InSb薄膜のためのInSb単分子層形成条件の最適化2011

    • Author(s)
      安井雄一郎、中山幸二、中谷公彦、森雅之、前澤宏一
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Effect of initial In coverage for preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction controlled epitaxy2011

    • Author(s)
      M. Mori, Y. Yasui , K. Nakayama, K. Nakatani, K. Maezawa
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011)
    • Place of Presentation
      Nagoya, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 表面再構成制御成長法を用いたSi上への高移動度InSb薄膜の成長とその応用2011

    • Author(s)
      森雅之、中谷公彦、中山幸二、安井雄一郎、角田梓、岩杉達矢、前澤宏一、宮崎英志、水谷孝
    • Organizer
      電気学会「シリコンナノデバイス集積化技術」調査専門委員会、「クラウド時代のユビキタス電子デバイス」調査専門委員会合同委員会
    • Place of Presentation
      法政大大学
    • Year and Date
      2011-11-22
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Fluidic Self-Assembly (FSA)のための微小はんだバンプの作製(II)2011

    • Author(s)
      中野純、大勝崇外、柴田知明、森雅之、前澤宏一
    • Organizer
      2011年電子情韓通信学会総合大会
    • Place of Presentation
      東京都立大学
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 表面再構成制御成長法を用いた高移動度InSb薄膜の成長2011

    • Author(s)
      中山幸二、中谷公彦、安井雄一郎、サラ カマセ、森雅之、前澤宏一
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 化合物半導体上におけるInSbナノワイヤーの成長2011

    • Author(s)
      大川一成、河合太宮人、中谷祐介、橋本将視、森雅之、前澤宏一
    • Organizer
      2011年電気学会電子・情報システム部門大会
    • Place of Presentation
      富山大
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] InSb単分子層を介したSi基板上への高移動度InSb薄膜の作製2011

    • Author(s)
      中山幸二、安井雄一郎、中谷公彦、森雅之、前澤宏一
    • Organizer
      2011年電気学会電子・情報・システム部門大会
    • Place of Presentation
      富山大学五福キャンパス
    • Year and Date
      2011-09-08
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] High Frequency Oscillators based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs2011

    • Author(s)
      潘杰、森雅之、前澤宏一
    • Organizer
      2011年電子情報通信学会総合大会
    • Place of Presentation
      東京都立大学
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes Using Low-Melting Point Alloy Bumps2011

    • Author(s)
      J.Nakano, T.Shibata, T.Okatsu, M.Mori, K.Maezawa
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011)
    • Place of Presentation
      Gifu, Japan
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Characterization of InSb MOS diodes on Si substrates prepared by surface reconstruction controlled epitaxy2011

    • Author(s)
      K.Maezawa, A.Kadoda, T.Iwasugi, K.Nakatani, K.Nakayama, K.Imaizumi, M.Mori, E.Miyazaki, T.Mizutani
    • Organizer
      35^<th> Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2011)
    • Place of Presentation
      Catania, Italy
    • Year and Date
      2011-05-29
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 化合物半導体上におけるInSBなのワイヤーの成長2011

    • Author(s)
      大川一成、河合太宮人、中谷裕介、橋本将視、森雅之、前澤宏一
    • Organizer
      2011年電気学会電子・情報・システム部門大会
    • Place of Presentation
      富山大学五福キャンパス
    • Year and Date
      2011-09-08
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Characterization of InSb MOS diodes on Si substrate prepared by surface reconstruction controlled epitaxy2011

    • Author(s)
      K. Maezawa, A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, K. Imaizumi, M. Mori, E. Miyazaki, T. Mizutani
    • Organizer
      35thWorkshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2011)
    • Place of Presentation
      Catania, Italy
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Si上高移動度InSb薄膜のためのInSb単分子層形成条件の最適化2011

    • Author(s)
      安井雄一郎、中山幸二、中谷公彦、森雅之、前澤宏一
    • Organizer
      2011年秋季第72回応用物理学会学術講演開
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 共用共振器を省略した共鳴トンネル3次高調波発信器2011

    • Author(s)
      早野一起、森雅之、前澤宏一
    • Organizer
      2011年電子情報通信学会総合大会
    • Place of Presentation
      東京都立大学
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] High Speed Circuits Based on Resonant Tunneling Diodes and Their Application to Analog Digital Converters2010

    • Author(s)
      K.Maezawa, S.Shibata, K.Takaoka, M.Mori
    • Organizer
      2010 Asia-Pacific Radio Science Conference (AP-RASC' 10)
    • Place of Presentation
      Toyama, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] InSb noanowires grown on a GaAs substrate using Au catalyst2010

    • Author(s)
      T.Kawai, M.Mori, I.Ookawa, Y.Nakaya, K.Maezawa
    • Organizer
      The 37^<th> International Symposium on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-05-31
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] A Traveling Wave Amplifier Based on Composite Right/Left Handed (CRLH) Transmission Lines Periodically Loaded with Resonant Tunneling Diode Pairs2010

    • Author(s)
      K.Maezawa, K.Kasahara, M.Mori
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] InSb単分子層を用いた高移動度InSb薄膜のヘテロエピタキシャル成長2010

    • Author(s)
      中山幸二、中谷公彦、安井雄一郎、サラ カマセ、森雅之、前澤宏一
    • Organizer
      平成22年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] GaAs基板上におけるInSbナノワイヤーの作製2010

    • Author(s)
      大川一成、河合太宮人、中谷祐介、真屋和幸、橋本将視、森雅之、前澤宏一
    • Organizer
      平 成22年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Step hall measurement of InSb films grown on Si(111) with InSb bi-layer2010

    • Author(s)
      K. Nakayama, Kn Nakatani, S. Tsuji, M. Mori, K. Maezawa
    • Organizer
      The 3rdInternational Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010)
    • Place of Presentation
      Toyama, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] High electron mobility InSb films grown on Si(111) substrate via √7x√3-In and 2x2-In surface reconstruction2010

    • Author(s)
      S. Khamseh, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa
    • Organizer
      2010 International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] InSb単分子層を用いた高移動度InSb薄膜のヘテロエピタキシャル成長2010

    • Author(s)
      中山幸二、中谷公彦、安井雄一郎、サラカマセ、森雅之、前澤宏一
    • Organizer
      平成22年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢大学角間キャンパス
    • Year and Date
      2010-11-20
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Fluidic Self-Assembly (FSA)のための微少はんだバンプの作製2010

    • Author(s)
      中野純、大勝崇外、森雅之、前澤宏
    • Organizer
      2010年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      大阪府立大学
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] InSb nanowires grown on a GaAs substrate using Au catalyst2010

    • Author(s)
      T. Kawai, M. Mori, I. Ookawa, Y. Nakaya, K. Maezawa
    • Organizer
      the 37thInternational Symposium on Compound Semiconductors (ISCS 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Step hall measurement of InSb films grown on Si(111) with InSb bi-layer2010

    • Author(s)
      K.Nakayama, K.Nakatani, S.Tsuji, M.Mori, K.Maezawa
    • Organizer
      The 3^<rd> International Symposium on Organic and Inorganic Electronic Materials and Related Nano technologies (EM-NANO2010)
    • Place of Presentation
      富山国際会議場
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] A Traveling Wave Amplifier Based on Composite Right/Left Handed (CRLH) Transmission Lines Periodically Loaded with Resonant Tunneling Diode Pairs2010

    • Author(s)
      K.Maezawa, K.Kasahara, M.Mori
    • Organizer
      22nd International Conferene on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] High electron mobility InSb films grown on Si(111) with InSb bi-layer2010

    • Author(s)
      K. Nakatani, K. Nakayama, S. Khamseh, M. Mori, K. Maezawa
    • Organizer
      The 3rdInternational Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010)
    • Place of Presentation
      Toyama, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] High Speed Circuits Based on Resonant Tunneling Diodes and Their Application to Analog Digital Converters2010

    • Author(s)
      K.Maezawa, S.Shibata, K.Takaoka, M.Mori
    • Organizer
      2010 Asia-Pacific Radio Science Conference (AP-RASC'10)
    • Place of Presentation
      Toyama, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] InSb MOS diode on a Si(111) substrate grown by surface reconstruction controlled epitaxy2010

    • Author(s)
      A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa
    • Organizer
      2010 International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] InSb noanowires grown on a GaAs substrate using Au catalyst2010

    • Author(s)
      T.Kawai, M.Mori, I.Ookawa, Y.N akaya, K.Maezawa
    • Organizer
      GaAs基板上におけるInSbナ"イヤーの作製
    • Place of Presentation
      金沢大学角間キャンパス
    • Year and Date
      2010-11-20
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 共鳴トンネル素子を生かす新しい集積化技術2010

    • Author(s)
      前澤宏一
    • Organizer
      第43回ナノ・スピン工学研究会
    • Place of Presentation
      東北大
    • Year and Date
      2010-03-10
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] High Speed Circuits Based on Resonant Tunneling Diodes and Their Application to Analog Digital Converters2010

    • Author(s)
      K.Maezawa, S.Shibata, K.Takaoka, M.Mori
    • Organizer
      2010 Asia-Pacific Radio Science Conference (AP-RASC' 10)
    • Place of Presentation
      Toyama, Japan
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Highelectron mobilityInSbfilms grown on Si(111) substrate Inand2x2-In surface reconstruction2010

    • Author(s)
      S.Khamseh, K.Nakatani, K.Naka vama. M.Mori. K.Maezawa
    • Organizer
      2010 International Conference on Solid State Dev ices and Materials (SSDM2010)
    • Place of Presentation
      東京大学本郷キャンパス
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 表面再構成制御成長法で成長したSi(111)基板上のlnSbMosダイオードの作製2010

    • Author(s)
      角田梓、岩杉達矢、中谷公彦、中山幸二、森雅之、前澤宏一
    • Organizer
      平成22年度応用物群会北陸・信越支部学術講演会
    • Place of Presentation
      金沢大学角間キャンパス
    • Year and Date
      2010-11-20
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] InSb MOS diode on a Si(111) substrate grown by surface reconstructon controlled epitaxy2010

    • Author(s)
      A.Kadoda, T.Iwasugi, K.Nakatani, K.Nakayama, M.Mori, K.Maezawa
    • Organizer
      2010 International Conference on Solid State Dey ices and Materials (SSDM2010)
    • Place of Presentation
      東京大学本郷キャンパス
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] 表面再構成制御成長法で成長したSi(111)基板上のInSbMOSダイオードの作製2010

    • Author(s)
      角田梓、岩杉達矢、中谷公彦、中山幸二、森雅之、前澤宏一
    • Organizer
      平成22年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] A Traveling Wave Amplifier Based on Composite Right/Left Handed (CRLH) Transmission Lines Periodically Loaded with Resonant Tunneling Diode Pairs2010

    • Author(s)
      K.Maezawa, K.Kasahara, M. Mori
    • Organizer
      22nd International Conferene on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] High electron mobility InSb films grownon Si (111) with InSb bi-layer2010

    • Author(s)
      K.Nakatani, K.Nakavama, S.Khamaeh, M.Mori, K.Maezawa
    • Organizer
      The 3^<rd> International Symposium on Organic and Inorganic Electronic Materials and Related Nano technologies (EM-NANO2010)
    • Place of Presentation
      富山国際会議場
    • Year and Date
      2010-06-23
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] AINセラミック基板上に集積した共鳴トンネルベア発振器2009

    • Author(s)
      前澤宏一, 亀谷直樹, 岸本茂, 水谷孝, 赤松和弘
    • Organizer
      電子情報通信学会、電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Year and Date
      2009-02-26
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] RF small signal characterization of active transmission lines loaded by InGaAs/A1As resonant tunneling diodes2009

    • Author(s)
      K.Kasahara, T.Ohe, M.Mori, K.Maezawa
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] RF small signal characterization of active transmission lines loaded by InGaAs/AlAs resonant tunneling diodes2009

    • Author(s)
      K.Kasahara, T.Ohe, M.Mori, K.Maezawa
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] A third harmonic oscillator using coupled RTD pair oscillators2009

    • Author(s)
      K.Maezawa T.Ohe, K.Kasahara, M.Mori
    • Organizer
      Topical Workshop on Heterostructure Microelectronics (TWHM2009)
    • Place of Presentation
      Nagano, Japan
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] Improved Bias Stability of the RTD-Pair Oscillators Integrated on an A1N Ceramic Substrate2008

    • Author(s)
      K.Maezawa, N.Kamegai, S.Kishimoto, T.Mizutani, K.Akamatsu
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2008)
    • Year and Date
      2008-09-24
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] 共鳴トンネルダイオードペアを分散配置したアクティブ伝送線路2008

    • Author(s)
      前澤宏一, 藤城翔, 笠原康司, 坂本智哉, 森雅之
    • Organizer
      2008年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      明治大学 生田キャンパス
    • Year and Date
      2008-09-17
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] Improved Bias Stability of the RTD-Pair Oscillators Integrated on an AIN Ceramic Substrate2008

    • Author(s)
      K. Maezawa, N. Kamegai, S. Kishimoto, T. Mizutani, K. Akamatsu
    • Organizer
      2008 International Conference on Solid State Devices and Materials (SSDM2008)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2008-09-24
    • Data Source
      KAKENHI-PROJECT-20360155
  • [Presentation] 共鳴トンネルデバイス2007

    • Author(s)
      前澤
    • Organizer
      電子情報通信学会 総合全国大会
    • Place of Presentation
      名古屋、日本
    • Year and Date
      2007-03-23
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] MOBILE を用いたNRZ-DFF とそのFMDSMへの応用2007

    • Author(s)
      室矢、前澤、水谷
    • Organizer
      電子情報通信学会 ソサイエティ大会
    • Place of Presentation
      鳥取、日本
    • Year and Date
      2007-09-13
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] An NRZ-DFF Using MOBILEs and Its Application to FMDSM2007

    • Author(s)
      Y, Muroya, K, Maezawa, T, Mizutania
    • Organizer
      IEICE Society Conference
    • Place of Presentation
      Tottori, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] MOBILEを用いたNRZ-DFFとそのFMDSMへの応用2007

    • Author(s)
      室矢、前澤、水谷
    • Organizer
      電子情報通信学会 ソサイエティ大会
    • Place of Presentation
      烏取、日本
    • Year and Date
      2007-09-13
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] Resonant Tunneling Devices2007

    • Author(s)
      K, Maezawa
    • Organizer
      IEICE General Conference
    • Place of Presentation
      Nagoya, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes2006

    • Author(s)
      K, Maezawa
    • Organizer
      Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD2006), Sendai
    • Place of Presentation
      Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] InP-based Resonant Tunneling Diode/HEMT Integrated Circuits for Ultrahigh-Speed Operation2006

    • Author(s)
      前澤、水谷
    • Organizer
      Int. Conf. InP & Related Materials(IPRMO6)
    • Place of Presentation
      Princeton, USA
    • Year and Date
      2006-05-10
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes2006

    • Author(s)
      前澤
    • Organizer
      Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD2006)
    • Place of Presentation
      仙台、日本
    • Year and Date
      2006-07-05
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] 100 GHz Operation of a Resonant Tunneling Logic Gate MOBILE Having a Symmetric Configuration2006

    • Author(s)
      K, Maezawa, H, Sugiyama, S, Kishimoto, T, Mizutani
    • Organizer
      Int. Conf. InP & Related Materials(IPRM06), Princeton
    • Place of Presentation
      USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] InP-based Resonant Tunneling Diode/HEMT Integrated Circuits for Ultrahigh-Speed Operation2006

    • Author(s)
      K, Maezawa, T, Mizutani
    • Organizer
      Int. Conf. InP & Related Materials(IPRM06), Princeton
    • Place of Presentation
      USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] 100 GHz Operation of a Resonant Tunneling Logic Gate MOBILE Having a Symmetric Configuration2006

    • Author(s)
      前澤、杉山、岸本、水谷
    • Organizer
      Int. Conf. InP & Related Materials(IPRMO6)
    • Place of Presentation
      Princeton, USA
    • Year and Date
      2006-05-08
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18360168
  • [Presentation] 共鳴トンネルダイオードを用いたサンプリング回路の作製と評価

    • Author(s)
      中山大周、呉東坡、角谷祐一郎、潘杰、森雅之、前澤宏一
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      徳島大学
    • Year and Date
      2014-09-23 – 2014-09-26
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 共鳴トンネル超再生検波回路における基本波を超える高周波信号の検波

    • Author(s)
      前澤宏一、潘杰、角谷祐一郎、中山大周、森雅之
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      北海道大学
    • Year and Date
      2015-02-05 – 2015-02-06
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Ge(111)基板上InSb薄膜の作製

    • Author(s)
      三枝孝彰、森雅之、前澤宏一
    • Organizer
      2014年(平成26年)第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] 共用共振器を省略した共鳴トンネル3次高調波発信器

    • Author(s)
      早野一起、森雅之、前澤宏一
    • Organizer
      2011 年電子情報通信学会総合大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 共鳴トンネルデバイスを用いたテラヘルツ帯信号処理の可能性

    • Author(s)
      前澤宏一、潘杰、呉東坡、森雅之
    • Organizer
      2013 年電子情報通信学会ソサイエティ大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 共鳴トンネル素子を用いた装荷したアクティブ伝送線路を用いた高次高調波発振器の可能性

    • Author(s)
      潘 傑、早野一樹、森雅之、前澤宏一
    • Organizer
      電子情報通信学会、電子デバイス研究会(ED)報告 ED2011-147, p31-34 (2012)
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] THz帯域を目指した新構造可変位相シフタ

    • Author(s)
      中野大輔、森雅之、前澤宏一、石井仁、安藤浩哉
    • Organizer
      2015年電子情報通信学会総合大会
    • Place of Presentation
      立命館大学びわこ・くさつキャンパス
    • Year and Date
      2015-03-10 – 2015-03-13
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs

    • Author(s)
      Jie Pan, M. Mori, K. Maezawa
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM 2011)
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Thermal Reliability of Transplanted Devices by Fluidic Self-Assembly Using Molten Ga Bumps

    • Author(s)
      K. Maezawa, J. Nakano, T. Shibata, H. Morita, H. Sakamoto, M. Mori
    • Organizer
      2014 Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2014)
    • Place of Presentation
      Delphi, Greece
    • Year and Date
      2014-06-18 – 2014-06-20
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] RTDpair発振器の発振周波数に対する測定系の影響

    • Author(s)
      早野一起、森雅之、前澤宏一
    • Organizer
      2011年電子情報通信学会 ソサイエティ大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Experimental Demonstration of Resonant Tunneling Super Regenerative Detectors Detecting High Order Harmonic Signals on Si substrate

    • Author(s)
      J. Pan, Y. Kakutani, T. Nakayama, M. Mori and K. Maezawa
    • Organizer
      2014 International Conference on Solid State Devices and Materials (SSDM 2014)
    • Place of Presentation
      つくば
    • Year and Date
      2014-09-08 – 2014-09-14
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 超音波ディップコート法を用いた微小はんだバンプの作製

    • Author(s)
      森田弘樹、中野純、柴田知明、坂本宙、森雅之、前澤宏一
    • Organizer
      応用物理学会北陸・信越支部学術講演会2012
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Ultra short pulse generators using a resonant tunneling diode transplanted on Si substrate

    • Author(s)
      H. Sakamoto, S. Yamada, J. Nakano, H. Morita, M. Mori and K. Maezawa
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2014)
    • Place of Presentation
      金沢
    • Year and Date
      2014-06-01 – 2014-06-03
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] 中野純、大勝崇外、柴田知明、森雅之、前澤宏一

    • Author(s)
      中野純、大勝崇外、柴田知明、森雅之、前澤宏一
    • Organizer
      2011年電子情報通信学会総合大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] High Speed Circuits Based on Resonant Tunneling Diodes and Their Application to Analog Digital Converters

    • Author(s)
      K. Maezawa, S. Shibata, K. Takaoka and M. Mori
    • Organizer
      2010 Asia-Pacific Radio Science Conference (AP-RASC'10)
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Fluidic Self-Assembly (FSA)のための微小はんだバンプの作製

    • Author(s)
      中野純、大勝崇外、森雅之、前澤宏一
    • Organizer
      2010 年電子情報通信学会ソサイエティ大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 共鳴トンネルダイオードを用いた高性能サンプリング回路の提案

    • Author(s)
      呉東坡、潘杰、森雅之、前澤宏一
    • Organizer
      2012 年電子情報通信学会 ソサイエティ大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 共鳴トンネル素子を活かす集積化技術とTHz信号処理への挑戦

    • Author(s)
      前澤宏一、潘杰、呉東坡、中野純、森雅 之
    • Organizer
      電気学会「シリコンナノデバイス集積化技術」調査専門委員会、「クラウド時代のユビキタス電子デバイス」調査専門委員会 合同委員会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Electrical Characterization of n+-InSb/p-Si Heterojunctions Grown by Surface Reconstruction Controlled Epitaxy

    • Author(s)
      K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, and K. Maezawa
    • Organizer
      2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2014)
    • Place of Presentation
      Ryukoku University Avanti Kyoto Hall, Kyoto
    • Year and Date
      2014-06-19 – 2014-06-20
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate

    • Author(s)
      T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, and K. Maezawa
    • Organizer
      2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2014)
    • Place of Presentation
      Ryukoku University Avanti Kyoto Hall, Kyoto
    • Year and Date
      2014-06-19 – 2014-06-20
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] RTD装荷微小カンチレバーを用いたΔΣ型歪みセンサーのための発振回路の検討

    • Author(s)
      角谷祐一郎、中山大周、潘杰、森雅之、前澤宏一
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      徳島大学
    • Year and Date
      2014-09-23 – 2014-09-26
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] Si(111)基板上へのGaSbエピタキシャル成長と膜質の評価

    • Author(s)
      下山裕哉、森雅之、前澤宏一
    • Organizer
      2014年(平成26年)第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] 共鳴トンネルダイオードペアを装荷した右手/左手系複合伝送線路における信号増幅

    • Author(s)
      前澤宏一、笠原康司、潘杰、森雅之
    • Organizer
      子情報通信学会電子デバイス研究会(ED)報告
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] High Frequency Oscillators based on Active Transmission Lines Loaded withResonant Tunneling Diode Pairs

    • Author(s)
      潘 杰、森雅之、前澤宏一
    • Organizer
      2011年電子情報通信学会総合大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Fluidic Self-Assembly (FSA)のための微小はんだバンプの作製

    • Author(s)
      柴田知明、中野純、大勝崇外、森雅之、前澤宏一
    • Organizer
      2011年電気学会電子・情報・システム部門大会
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] Si(111)基板上へのInxGa1-xSbエピタキシャル成長と膜質の評価

    • Author(s)
      下山裕哉、森雅之、前澤宏一
    • Organizer
      第2回有機・無機エレクトロニクスシンポジウム
    • Place of Presentation
      信州大学長野(工学)キャンパス
    • Year and Date
      2014-07-11 – 2014-07-12
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] A Traveling Wave Amplifier Based on Composite Right/Left Handed (CRLH)Transmission Lines Periodically Loaded with Resonant Tunneling Diode Pairs

    • Author(s)
      K. Maezawa, K. Kasahara, M. Mori
    • Organizer
      2nd International Conferene on Indium Phosphide and Related Materials (IPRM2010)
    • Data Source
      KAKENHI-PROJECT-22656080
  • [Presentation] 溶融Gaバンプを用いたFluidic Self-Assemblyで配置された微小デバイスの熱的信頼性

    • Author(s)
      中野純、 柴田知明、森田弘樹、坂本宙、 森 雅之、 前澤 宏一
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      徳島大学
    • Year and Date
      2014-09-23 – 2014-09-26
    • Invited
    • Data Source
      KAKENHI-PROJECT-25249042
  • [Presentation] SOI(Silicon-on-Insulator)基板上へのInSbヘテロエピタキシャル成長

    • Author(s)
      坂本大地、森雅之、前澤宏一
    • Organizer
      2014年(平成26年)第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25289099
  • [Presentation] HEMTと空洞共振器を用いたデジタルマイクロフォンセンサ

    • Author(s)
      藤野 舜也、 水野 雄太、 山岡 昂博、 森 雅之、 前澤 宏一
    • Organizer
      2014年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      徳島大学
    • Year and Date
      2014-09-23 – 2014-09-26
    • Data Source
      KAKENHI-PROJECT-26630154
  • [Presentation] InSb単分子層を介したV溝加工したSi(001)基板上へのInSb薄膜の成長

    • Author(s)
      岩杉達矢、カマセ・サラ、角田梓、中谷公彦、森雅之、前澤宏一
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      北陸先端科学技術大学院大学
    • Data Source
      KAKENHI-PROJECT-22560323
  • [Presentation] Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes Using Low-Melting Point Alloy Bumps

    • Author(s)
      J. Nakano, T. Shibata, T. Okatsu, M.Mori, K. Maezawa
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011).
    • Data Source
      KAKENHI-PROJECT-22656080
  • 1.  MORI Masayuki (90303213)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 129 results
  • 2.  ANDOH Hiroya (30212674)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 4 results
  • 3.  MIZUTANI Takashi (70273290)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 19 results
  • 4.  FUJIMAKI Akira (20183931)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  INOUE Masumi (00203258)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  TSUKAMOTO Takehiko (10217284)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  SUGIURA Touko (70206407)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  OGAWA Hideo (20022717)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  KIMURA Kimihiro (10565328)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  OHNO Yutaka (10324451)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  KISHIMOTO Shigeru (10186215)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  石井 仁 (20506175)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 13.  ATONO Shoji
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  SUZUKI Junichi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  KANBE Daisuke
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  KAJITA Shota
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  TOYA KOSHI
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results

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