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畑谷 成郎  ハタタニ シゲオ

ORCIDConnect your ORCID iD *help
Researcher Number 90302942
Affiliation (based on the past Project Information) *help 2001: 東工大, 助手
2000: 東京工業大学, 大学院・理工学研究科, 助手
2000: 東京工業大学, 量子効果エレクトニクスセンター, 助手
2000: 東京工業大学, 量子効果エレクトロニクス研究センター, 助手
1999: 東京工業大学, 工学部, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
電子デバイス・機器工学 / Applied materials science/Crystal engineering / Electronic materials/Electric materials
Keywords
Principal Investigator
単電子デバイス / 量子効果 / 窒化 / 酸化 / ナノ結晶シリコン / ナノ結晶 / ナノ / シリコン
Except Principal Investigator
nano-technology / nanocrystalline silicon … More / 単電子トンネル / ナノ結晶シリコン / silicon on glass / oxide interface / silicon / large grain size / thinfilm transistors / re-crystallization / polycrystalline silicon / excimer laser annealing / phase shift / エキシマレーザ / Siグレイン / TFT / ELA / Re-crystallization / Poly-Si / Excimer laser / Phase Shift / planerization / quasi-direct transition / no phonon assisted / stress effect / luminescence / self-limiting oxidation / 自己停止機構 / 単電子トランジスタ / 酸化 / 電子放出素子 / リンガラス低温融解 / フォトルミネッセンス / 透過型電子顕微鏡観察 / ストレス下の酸化 / 量子ドット / プラズマCVD / surface electron emitter / ballistic transport / single electron memory / single electron tunneling / interface / pulsed plasma processing / バリスティック伝導 / 単電子メモリ / 量子ドット相関 / 微細加工プロセス / シリコン表面 / パルスプラズマプロセス Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (7 People)
  •  超微細ナノ結晶シリコンの表面酸化及び表面空化Principal Investigator

    • Principal Investigator
      畑谷 成郎
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Institute of Technology
  •  Twin Grain Thin Film Transistors

    • Principal Investigator
      MACHIDA Shinya, 松村 正清
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  Single Electron Devices Based on NeoSilicon Materials

    • Principal Investigator
      ODA Shunri
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Institute of Technology
  •  Control of Particle Size and Position of Nano-crystalline Silicon

    • Principal Investigator
      ODA Shunri
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  • 1.  ODA Shunri (50126314)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 2.  TSUCHIYA Yoshishige (80334506)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 3.  MACHIDA Shinya (70313335)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  UCHIDA Yasutaka (80134823)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  松村 正清 (30110729)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  SHIMADA Toshikazu
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  MIMURA Akio
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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