Yamamoto Kazuhiro 山本和弘

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YAMAMOTO Kazuhiro 山本和弘

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Researcher Number	90358292
Affiliation (Current)	2026: 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 総括研究主幹
Affiliation (based on the past Project Information) *help	2005 – 2011: 独立行政法人産業技術総合研究所, 計測フロンティア研究部門, 主任研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment
Keywords	Principal Investigator 極浅接合 / 超低エネルギー / ボロン / シリコン / イオン注入 / 超低エネルギーイオン / ultra shallow junction / Ultra low energy ion / Boron / Silicon / Ion implantation

Research Projects
(3 results)
Research Products
(15 results)

Commercially adaptable technology on shallow junction of silicon by ultra-low energy ion implantationPrincipal Investigator
- Principal Investigator
  
  YAMAMOTO Kazuhiro
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of ultra-low energy ion implantation of silicon for ultra-shallow junctionPrincipal Investigator
- Principal Investigator
  
  YAMAMOTO Kazuhiro
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of ultra shallow doping of semiconductors by ultra low energy ion beamsPrincipal Investigator
- Principal Investigator
  
  YAMAMOTO Kazuhiro
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrials Science and Technology

All 2011 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Book Patent

[Book] OHM2007
- Author(s)
  山本和弘
- Total Pages
  2
- Publisher
  オーム社
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560299
[Journal Article] X-TEM of shallow doping layer of Si by ultra-low energy boron ion implantation2011
- Author(s)
  K. Yamamoto
- Journal Title
  
  Abstracts of the Microscopy Conference
  
  Pages: 1-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560381
[Journal Article] x-TEM of shallow doping layer of Si by ultra-low energy boron ion implantation2011
- Author(s)
  K.Yamamoto
- Journal Title
  
  Abstracts of the Microscopy Conference 2011 in Kiel
  
  Volume: M2 Pages: 1-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560381
[Journal Article] Ultralow-Energy Boron-lon Implantation of silicon2008
- Author(s)
  Kazuhiro Yamamoto and Hiroshi Itoh
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 23-25
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560330
[Journal Article] Ultralow-Energy Boron-Ion Implantation ofsilicon2008
- Author(s)
  Kazuhiro Yamamoto and Hiroshi Itoh
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 23-25
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560330
[Journal Article] Ultra-low-energy ion implantation to decrease the resistance of silicon2007
- Author(s)
  Kazuhiro Yamamoto
- Journal Title
  
  AIST today international 25
  
  Pages: 22-22
- Data Source
  KAKENHI-PROJECT-19560330
[Journal Article] XPS study fo silicon surface after ultra-low-energy ion implantation2006
- Author(s)
  K.Yamamoto, H.Itoh
- Journal Title
  
  Surface Science 600
  
  Pages: 3753-3753
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560299
[Journal Article] XPS study fo silicon surface after ultra-low-energy ion implantation
- Author(s)
  K.Yamamoto, H.Itoh
- Journal Title
  
  Surface Science (in press)
- Data Source
  KAKENHI-PROJECT-17560299
[Patent] ダイヤモンドへの異種元素導入方法2009
- Inventor(s)
  山本和弘, 吉田博昭
- Industrial Property Rights Holder
  産業技術総合研究所
- Acquisition Date
  2009-03-27
- Data Source
  KAKENHI-PROJECT-19560330
[Patent] 半導体素子並びに半導体素子への異種元素の導入方法及び装置2005
- Inventor(s)
  山本和弘, 井藤浩志
- Industrial Property Rights Holder
  産業技術総合研究所
- Patent Publication Number
  2006-253534
- Filing Date
  2005-03-14
- Acquisition Date
  2006-09-21
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560299
[Presentation] 超低エネルギーボロンイオン注入層のTEM観察2011
- Author(s)
  山本和弘
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21560381
[Presentation] 低エネルギーイオン注入によるボロン極浅接合層のTEM観察2011
- Author(s)
  山本和弘
- Organizer
  日本顕微鏡学会第67回学術講演会
- Place of Presentation
  福岡県福岡国際会議場
- Year and Date
  2011-05-16
- Data Source
  KAKENHI-PROJECT-21560381
[Presentation] 超低エネルギーボロンイオン注入層のTEM観察2011
- Author(s)
  山本和弘
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21560381
[Presentation] 超低エネルギーイオン注入によるシリコン極浅ドーピング層の形成2009
- Author(s)
  山本和弘, 井藤浩志
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19560330
[Presentation] Ultra-low-energy boron ion implantation of silicon2007
- Author(s)
  Kazuhiro Yamamoto and Hiroshi Itoh
- Organizer
  17th International Vacuum Congress and 13th International Conference on Surface Science
- Place of Presentation
  Stockholm
- Year and Date
  2007-07-03
- Data Source
  KAKENHI-PROJECT-19560330

Yamamoto Kazuhiro 山本 和弘

YAMAMOTO Kazuhiro 山本 和弘

Research Projects

Research Products

Commercially adaptable technology on shallow junction of silicon by ultra-low energy ion implantationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of ultra-low energy ion implantation of silicon for ultra-shallow junctionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of ultra shallow doping of semiconductors by ultra low energy ion beamsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] OHM2007

Author(s)

Total Pages

Publisher

Description

Data Source

[Journal Article] X-TEM of shallow doping layer of Si by ultra-low energy boron ion implantation2011

Author(s)

Journal Title

Data Source

[Journal Article] x-TEM of shallow doping layer of Si by ultra-low energy boron ion implantation2011

Author(s)

Journal Title

Data Source

[Journal Article] Ultralow-Energy Boron-lon Implantation of silicon2008

Author(s)

Journal Title

Data Source

[Journal Article] Ultralow-Energy Boron-Ion Implantation ofsilicon2008

Author(s)

Journal Title

Data Source

[Journal Article] Ultra-low-energy ion implantation to decrease the resistance of silicon2007

Author(s)

Journal Title

Data Source

[Journal Article] XPS study fo silicon surface after ultra-low-energy ion implantation2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] XPS study fo silicon surface after ultra-low-energy ion implantation

Author(s)

Journal Title

Data Source

[Patent] ダイヤモンドへの異種元素導入方法2009

Inventor(s)

Industrial Property Rights Holder

Acquisition Date

Data Source

[Patent] 半導体素子並びに半導体素子への異種元素の導入方法及び装置2005

Inventor(s)

Industrial Property Rights Holder

Patent Publication Number

Filing Date

Acquisition Date

Description

Data Source

[Presentation] 超低エネルギーボロンイオン注入層のTEM観察2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 低エネルギーイオン注入によるボロン極浅接合層のTEM観察2011

Author(s)

Organizer

Place of Presentation

Yamamoto Kazuhiro 山本和弘

YAMAMOTO Kazuhiro 山本和弘