Kobayashi Yasuyuki 小林康之

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KOBAYASHI Yasuyuki 小林康之

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Researcher Number	90393727
Affiliation (Current)	2025: 弘前大学, 理工学研究科, 教授
Affiliation (based on the past Project Information) *help	2014 – 2024: 弘前大学, 理工学研究科, 教授 2006 – 2013: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 2012: 日本電信電話株式会社ＮＴＴ物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 2009: NTT Basic Research Laboratories, 機能物質科学研究部・薄膜材料研究グループ, 主幹研究員 2008: NTT Basic Research Laboratories, NTT物性科学基礎研究所, 主幹研究員
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / Nanomaterials/Nanobioscience
Keywords	Principal Investigator 六方晶窒化ホウ素 / 分子線エピタキシー / 半導体物性 / 結晶成長 / 半導体 / 窒化物半導体 / GaN / MBE / BN / 金属バッファ―層 … More / 金属基板 / ガラス基板 / 窒化ホウ素 / 分子線エピタキシー装置 / 機械的転写 / GaN系薄膜 / 六方晶BN / エピタキシャル成長 / 光物性 … More Except Principal Investigator 結晶成長 / 超格子 / 表面・界面物性 / 光物性 / 無転位 / ステップフリー / 窒化物半導体 / 量子井戸 / 半導体物性 / エピタキシャル成長 / エッチング / エタノール / 微傾斜基板 / 供給律速 / ホモエピタキシャル成長 / 成長過程 / エチレン / 分子線エピタキシ法 / Ｘ線光電子分光 / 表面拡散 / 単結晶領域 / ヘテロエピタキシャル成長 / 界面反応 / 分子線エピタキシャル成長法 / X線光電子分光 / 拡散長 / 相互作用 / ヘテロ成長 / 欠陥 / 六方晶窒化硼素 / 分子線エピタキシャル成長 / グラフェン / ナノ構造形成・制御 Less

金属バッファ層上層状窒化ホウ素を用いたGaN系デバイス構造成長とその機械的転写Principal Investigator
- Principal Investigator
  
  小林康之
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Hirosaki University
Growth of GaN-based devices on metal and glass substrates using layered BNPrincipal Investigator
- Principal Investigator
  
  Kobayashi Yasuyuki
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Hirosaki University
Mechanical transfer of GaN-based devices using layered BNPrincipal Investigator
- Principal Investigator
  
  Kobayashi Yasuyuki
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Hirosaki University
Formation of wafer-scale graphene by molecular beam epitaxy
- Principal Investigator
  
  MAEDA Fumihiko
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  NTT Basic Research Laboratories
Research on step-free heterostructures of nitride semiconductors
- Principal Investigator
  
  AKASAKA Tetsuya
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories
Research on hexagonal boron nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  KOBAYASHI Yasuyuki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories

All 2023 2022 2021 2020 2019 2018 2017 2014 2012 2011 2010 2009 2008 2007

All Journal Article Presentation

[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface2012
- Author(s)
  T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
- Journal Title
  
  Advanced Materials
  
  Volume: 24 Issue: 31 Pages: 4296-4300
- DOI
  10.1002/adma.201200871
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface、Advanced.2012
- Author(s)
  T. Akasaka、H. Gotoh、Y. Kobayashi、H. Yamamoto
- Journal Title
  
  Materials
  
  Volume: Vol. 24 Pages: 4296-4300
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 表面過飽和度制御によるGaNステップフリー面の形成2011
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: Vol.38 No.4 Pages: 221-226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 表面過飽和度制御によるGaN ステップフリー面の形成2011
- Author(s)
  赤坂哲也、小林康之赤坂哲也、小林康之、嘉数誠
- Journal Title
  
  日本結晶成長学会論文誌
  
  Volume: Vol. 38 Pages: 221-226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 3 Pages: 75602-75602
- NAID
  10026495564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] 六方晶窒化ホウ素のエピタキシャル成長とその紫外発光特性2010
- Author(s)
  小林康之、C.L. Tsai、赤坂哲也
- Journal Title
  
  表面科学 31巻
  
  Pages: 99-105
- NAID
  10026319493
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] 六方晶窒化ホウ素のエピタキシャル成長とその紫外発光特性2010
- Author(s)
  小林康之、蔡俊瓏、赤坂哲也
- Journal Title
  
  表面科学 31
  
  Pages: 99-105
- NAID
  10026319493
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol. 97 Pages: 141902-141902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10026495564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360013
[Journal Article] Optical band gap of h-BN epitaxial film grown on c-plane sapphire substrate2010
- Author(s)
  Y.Kobayashi, C-L.Tsai, T.Akasaka
- Journal Title
  
  Physica Status Solidi(c) (掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Optical band gap of h-BN epitaxial film grown on c-plane sapphire substrate2010
- Author(s)
  Y. Kobayashi、C.L. Tsai、T. Akasaka
- Journal Title
  
  Physica Status Solidi(c) (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate2009
- Author(s)
  C.L. Tsai、T. Akasaka、Y. Kobayashi
- Journal Title
  
  Journal of Crystal Growth Vol.311
  
  Pages: 3054-3057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexogonal boron nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka、T. Makimoto
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 5048-5052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal BN epitaxial growth on(0001)sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Journal Title
  
  Journal of crystal growth Vol.310
  
  Pages: 5044-5047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal boron nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka, T. Makimoto
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5048-5052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5044-5047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 5044-5047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Boron Nitride Thin Films Grown on Graphitized <6H-SiC> Substrates by Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  Y.Kobayashi, H.Hibino, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 2554-2557
- NAID
  210000062433
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] BGaN micro-islands as novel buffers fro growth of high quality GaN on sapphire2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 320-324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire2007
- Author(s)
  T.Akasaka, Y.Kobayashi, T.Makimoto
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 320-324
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007
- Author(s)
  Y. Kobayashi、T. Nakamura、T. Akasaka、T. Makimoto、N. Matsumoto
- Journal Title
  
  Physica Status Solidi(b) Vol.244
  
  Pages: 1789-1792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar AlBN(1120)and(1100)films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Journal Title
  
  Applied Physics Letters Vol.91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007
- Author(s)
  Y.Kobayashi, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto
- Journal Title
  
  Physica Status Solidi (b) 244
  
  Pages: 1789-1792
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar AlBN (1120) and (1100) films grown on SiC substrate2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Journal Title
  
  Applied Physics Letters Vol.91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111)grown by flow-rate modulation epitaxy2007
- Author(s)
  Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
- Journal Title
  
  Physica Status Solidi(b) Vol.244
  
  Pages: 1789-1792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Boron Nitride Thin Films Grown on Graphitized 6H-SiC Substrates by Metalorganic Vapor phase Epitaxy2007
- Author(s)
  Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
- Journal Title
  
  Japanese Jounal of Applied Physics Vol.46
  
  Pages: 2554-2557
- NAID
  210000062433
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] MBEによるCu(111)バッファ層を用いたサファイア基板上BN成長2023
- Author(s)
  籾山　貴、小豆畑敬、中澤日出樹、廣木正伸、熊倉一英、小林康之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23236
[Presentation] Growth of BN on Sapphire Substrates Using Cu (111) Buffer Layers by MBE2023
- Author(s)
  T. Momiyama, K. Kimura, T. Azuhata, H. Nakazawa, M. Hiroki, K.Kumakura, Y. Kobayashi
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23236
[Presentation] Plasma-assisted MBE Grown h-BN Thin Films on Glass Substrates2022
- Author(s)
  N. Hatakeyama, T. Azuhata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura, and Y. Kobayashi
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] MOVPE and MBE Growth of GaN-based Heterostructures on h-BN Release Layers2021
- Author(s)
  Y. Kobayashi, M. Hiroki, and K. Kumakura
- Organizer
  Epitaxy on 2D materials for layer release and their applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] MBEによるガラス基板上h-BN薄膜の膜厚評価2021
- Author(s)
  畠山直樹、小豆畑敬、中澤日出樹、岡本浩、廣木正伸、熊倉一英、小林康之
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] 六方晶窒化ホウ素リリース層上の窒化物半導体成長とその応用2020
- Author(s)
  小林康之、廣木正伸、熊倉一英
- Organizer
  令和元年度日本表面真空学会東北・北海道支部学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] MBEによるAlN/h-BNバッファ層上GaN薄膜のエピタキシャル成長2020
- Author(s)
  原田文矢、中澤日出樹、岡本　浩、廣木正伸、熊倉一英、小林康之
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] MBEによるガラス基板上BN薄膜成長2019
- Author(s)
  小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] Plasma-assisted Molecular Beam Epitaxy Growth of GaN Thin Films on Sapphire Substrates Using h-BN/AlN Buffer Layers2019
- Author(s)
  Y. Kobayashi, K. Nakata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] ガラス基板上MBE成長BN薄膜のラマン散乱2019
- Author(s)
  小林康之、小豆畑敬、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01886
[Presentation] Growth of GaN-based Semiconductors on h-BN Release Layers2018
- Author(s)
  Y. Kobayashi, K. Nakata, M. Hiroki, K. Kumakura
- Organizer
  4th Intensive Discussion on Nitride Semiconductor
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] MBEによるh-BNバッファ層を用いた(0001)サファイア基板上GaN成長2018
- Author(s)
  小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] h-BN/AlNバッファ層を用いたサファイア基板上GaN薄膜のMBE成長2018
- Author(s)
  小林康之、中田啓一、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] Growth of Single-Crystal (0001) GaN Films on (0001) Sapphire Substrates Using h-BN Buffer Layers by Molecular Beam Epitaxy2018
- Author(s)
  Y. Kobayashi, K. Nakata, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy2017
- Author(s)
  Y. Kobayashi, T. Kimura, H. Nakazawa, H. Okamoto, M. Hiroki, K. Kumakura
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] MBEによる(0001)サファイア基板上BN薄膜成長2017
- Author(s)
  小林康之、木村拓磨、中澤日出樹、岡本浩、廣木正伸、熊倉一英
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26246015
[Presentation] グラフェン積層接合の電気特性2014
- Author(s)
  茶谷洋光,奥村俊夫,伊澤輝記,井口宗明,中島健志,小林慶祐,呉龍錫,有月琢哉,松本卓也,永瀬雅夫,前田文彦,日比野浩樹
- Organizer
  第61回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学（相模原市）
- Data Source
  KAKENHI-PROJECT-22310077
[Presentation] Step-free界面を有するInN/GaN単一量子井戸からの紫色狭線発光2012
- Author(s)
  赤坂哲也，後藤秀樹，小林康之，山本秀樹
- Organizer
  第73回応用物理学会秋季学術講演会
- Place of Presentation
  愛媛　松山大学
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface2012
- Author(s)
  T. Akasaka、H. Gotoh、Y. Kobayashi、H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  札幌(招待講演)
- Year and Date
  2012-10-17
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Study of nucleus and spiral growth mechanisms of GaN using selective-area MOVPE on GaN bulk substrate2012
- Author(s)
  T. Akasaka、Y. Kobayashi、C.-H. Lin、H. Yamamoto
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  仙台(招待講演)
- Year and Date
  2012-10-23
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface2012
- Author(s)
  T. Akasaka, H. Gotoh, Y. Kobayashi, and H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Study of nucleus and spiral growth mechanisms of GaN using selective-area MOVPE on GaN bulk substrate2012
- Author(s)
  T. Akasaka, Y. Kobayashi, C. H. Lin, and H. Yamamoto
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free 界面を有するInN/GaN 単一量子井戸からの紫色狭線発光2012
- Author(s)
  赤坂哲也、後藤秀樹、小林康之、山本秀樹
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山(13a-H9-9)
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface2012
- Author(s)
  T. Akasaka, A. Berry, Y. Kobayashi, and H. Yamamoto
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of a Step-Free Ultrathin InN Layer on a Step-Free GaN Surface2012
- Author(s)
  T. Akasaka、A. Berry、Y. Kobayashi、H. Yamamoto
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  京都
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of step-free GaN surface at low temperature of 770 oC by controlling surface supersaturation2011
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  グラスゴー(英国)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 表面過飽和度制御によるGaN ステップフリー面の形成2011
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  福岡(招待講演IN3)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Formation of step-free GaN surface at low temperature of 770C by controlling surface supersaturation2011
- Author(s)
  T.Akasaka, Y.Kobayashi, M.Kasu
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECCカンファレンスセンター,(グラスゴー,UK)
- Year and Date
  2011-07-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE2011
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  名古屋
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] GaN のMOVPE成長における表面過飽和度に及ぼすキャリアガスの影響2011
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木(26a-BY-5)
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE 選択成長によるGaN ステップフリー面上へのInN核生成2011
- Author(s)
  赤坂哲也、小林康之
- Organizer
  2011 年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形(31p-ZE-15)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE2011
- Author(s)
  T.Akasaka, Y.Kobayashi, M.Kasu
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  ウインクあいち(名古屋市)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE選択成長によるGaNステップフリー面上へのInN核生成2011
- Author(s)
  赤坂哲也, 小林康之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 表面過飽和度制御によるGaNステップフリー面の形成2011
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス(春日市)(招待講演)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free GaN hexagons grown by selective-area metalorganic vaporphase epitaxy(Invited)2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu
- Organizer
  3rd International Symposium on Growth of III-nitrides
- Place of Presentation
  コラム(モンペリエ,フランス)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  Tetsuya Akasaka, Yasuyuki Kobayashi Makoto Kasu
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Step-free GaN hexagons grown by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  3rd International Symposium on Growth of III-nitrides (ISGN-3)
- Place of Presentation
  モンペリエ(フランス)(招待講演)
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] 窒化ガリウムのステップフリー面の作製と成長機構2010
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  真空・表面科学合同講演会
- Place of Presentation
  大阪(4Ca-06)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPEにおけるGaNスパイラルおよび核成長速度の基板温度依存性評価2010
- Author(s)
  赤坂哲也, 小林康之, 嘉数誠
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] MOVPE におけるGaN スパイラルおよび核成長速度の基板温度依存性評価2010
- Author(s)
  赤坂哲也、小林康之、嘉数誠
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎(15p-C-6)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Nucleus and spiral growth of GaN studied by selective-area metalorganic vapor phase epitaxy2010
- Author(s)
  T. Akasaka、Y. Kobayashi、M. Kasu
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM2010)
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-22360013
[Presentation] Near Band-Gap Luminescnece of Hexagonal Boron Nitride Grown on Ni(111) Substrtae by Plasma-assisted MBE2009
- Author(s)
  C.L. Tsai、Y. Kobayashi、T. Akasaka、M. Kasu
- Organizer
  Electronic Materials Conference
- Place of Presentation
  アメリカ、ペンシルベニア
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Near Band-Gap Luminescence of Hexagonal Boron Nitride Grown on Ni(111)Substrate by Plasma-assisted MBE2009
- Author(s)
  C.L.Tsai, Y.Kobayashi, T.Akasaka, M.Kasu
- Organizer
  Electronic Materials Conference
- Place of Presentation
  アメリカ、ペンシルベニア州
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Optical Band Gap of Hexagonal BN Epitaxial Film Grown on c-Plane Sapphire Substrate2009
- Author(s)
  Y.Kobayashi, C.L.Tsai, T.Akasaka
- Organizer
  8^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  韓国、済州島
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN Epitaxial Growth by Flow-Rate Modulation Epitaxy on MBE-Grown h-BN Buffer Layer2009
- Author(s)
  Y.Kobayashi, C.L.Tsai, T.Akasaka
- Organizer
  8^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  韓国、済州島
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Optical band gap of hexagonal boron nitride epitaxial film grown on c-plane sapphire substrate2009
- Author(s)
  Y.Kobayashi, T.Akasaka
- Organizer
  2009 Asia-Core Workshop on Wide Bandgap Semiconductors
- Place of Presentation
  韓国、慶州
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial growth on(0001)sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Organizer
  14^<th> International conference on metal organic vapor phase epitaxy
- Place of Presentation
  France
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrtae2008
- Author(s)
  C.L. Tsai、T. Akasaka、Y. Kobayashi
- Organizer
  Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  日本、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Molecular beam epitaxial growth of hexagonal boron nitride on Ni (111) substrate2008
- Author(s)
  C. L. Tsai, Y. Kobayashi, T. Akasaka, M. Kasu
- Organizer
  Second International Symposium on Growth of III-Nitirides
- Place of Presentation
  日本、静岡、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Boron Nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy、招待講演
- Place of Presentation
  フランス、メス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  フランス、メス市
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Boron Nitiride grown by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  フランス、メス市
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  フランス、メス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111)substrate2008
- Author(s)
  C. L.Tsai, Y. Kobayashi, T. Akasaka, M. Kasu
- Organizer
  2^<nd> international symposium on growth of III-nitrides
- Place of Presentation
  日本
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Anisotropic in-plane strains in Al(B, Ga)N(1120)films grown on SiC(1120)2008
- Author(s)
  T. Akasaka, Y. Kobayashi
- Organizer
  2^<nd> international symposium on growth of III-nitrides
- Place of Presentation
  日本
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Anisotropic in-plane strains in Al (B, Ga) N (11-20) films grown on SiC (11-20)2008
- Author(s)
  T. Akasaka, Y. Kobayashi
- Organizer
  Second International Symposium on Growth of III-Nitirides
- Place of Presentation
  日本、静岡、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Anisotropic in-plane strains in Al(B, Ga)N (11-20) films grown on SiC (11-20)2008
- Author(s)
  T. Akasaka、Y. Kobayashi
- Organizer
  Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  日本、修善寺
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] In-situ monitoring of hexagonal BN flow-rate modulation epitaxy by shallow-angle reflectance using ultraviolet light2007
- Author(s)
  Y. Kobayashi、T. Miyamoto、T. Akasaka、T. Makimoto、N. Matsumoto
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  アメリカ、ソルトレイク
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Nonpolar AlBN (1120) and (1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  アメリカ、ラスベガス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Organizer
  7th International Conference of Nitride Semiconductors
- Place of Presentation
  アメリカ、ラスベガス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] In-situ monitoring of hexagonal BN flow-rate modulation epitaxy by shallow-angle reflectance using ultraviolet light2007
- Author(s)
  Y. Kobayashi, M. Miyamoto, T. Akasaka, T. Makimoto, N. Matsumoto
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  アメリカ,ソルトレイクシティ
- Data Source
  KAKENHI-PROJECT-18206004

1. 中澤日出樹 (90344613)

# of Collaborated Projects: 3 results

# of Collaborated Products: 13 results
2. AKASAKA Tetsuya (90393735)

# of Collaborated Projects: 2 results

# of Collaborated Products: 72 results
3. GOTOH Hideki (10393795)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
4. 岡本浩 (00513342)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
5. 小豆畑敬 (20277867)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
6. MAKIMOTO Toshiki (50374070)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
7. NISHIKAWA Atsushi (60417095)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. NAKANO Hidetoshi (90393793)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TAWARA Takehiko (40393798)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SANADA Haruki (50417094)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. MAEDA Fumihiko (70393741)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
12. HIBINO Hiroki (60393740)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
13. KASU Makoto (50393731)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
14. KUMAKURA KAZUHIDE

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
15. HIROKI MASANOBU

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results

Kobayashi Yasuyuki 小林 康之

KOBAYASHI Yasuyuki 小林 康之

Research Projects

Research Products

Co-Researchers

金属バッファ層上層状窒化ホウ素を用いたGaN系デバイス構造成長とその機械的転写Principal Investigator

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Growth of GaN-based devices on metal and glass substrates using layered BNPrincipal Investigator

Principal Investigator

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Review Section

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Mechanical transfer of GaN-based devices using layered BNPrincipal Investigator

Principal Investigator

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Formation of wafer-scale graphene by molecular beam epitaxy

Principal Investigator

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Research on step-free heterostructures of nitride semiconductors

Principal Investigator

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Research on hexagonal boron nitride semiconductorsPrincipal Investigator

Principal Investigator

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[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface2012

Author(s)

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DOI

Data Source

[Journal Article] Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface、Advanced.2012

Author(s)

Journal Title

Data Source

[Journal Article] 表面過飽和度制御によるGaNステップフリー面の形成2011

Author(s)

Journal Title

Data Source

[Journal Article] 表面過飽和度制御によるGaN ステップフリー面の形成2011

Author(s)

Journal Title

Data Source

[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010

Author(s)

Journal Title

Data Source

[Journal Article] Nucleus and spiral growth mechanisms of GaN studied by using selective-area metalorganic vapor phase epitaxy2010

Author(s)

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NAID

Data Source

[Journal Article] 六方晶窒化ホウ素のエピタキシャル成長とその紫外発光特性2010

Author(s)

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NAID

Data Source

[Journal Article] 六方晶窒化ホウ素のエピタキシャル成長とその紫外発光特性2010

Author(s)

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NAID

Data Source

[Journal Article] Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy2010

Author(s)

Journal Title

Kobayashi Yasuyuki 小林康之

KOBAYASHI Yasuyuki 小林康之