IROKAWA Yoshihiro 色川芳宏

Researcher Number	90394832
Other IDs
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help	2023: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 2018 – 2022: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 2017: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点電気・電子機能分野ワイドバンドギャップ材料グループ, 主幹研究員 2015 – 2016: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点電気・電子機能分野ワイドバンドギャップ材料グループ, 主任研究員 2015: 物質・材料研究機構, ワイドギャップ機能材料グループ, 研究員 … More 2014: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 2013 – 2014: 独立行政法人物質・材料研究機構, その他部局等, その他 2012: 物質・材料研究機構, 主任研究員 2011 – 2012: 独立行政法人物質・材料研究機構, その他部局等, 研究員 2009 – 2010: National Institute for Materials Science, 半導体材料センター, 主任研究員 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 界面 / 水素 / 窒化物半導体 / 窒化ガリウム / GaN / 半導体デバイス / センサ / SBD / トランジスタ / MOS … More / GaN MOSFET / hydrogen / interface / ナノシート / 準安定酸化ガリウム / 自然酸化膜 / 中間層 / MIS界面 / MIS型水素センサ / 相互作用 / 絶縁膜 / 窒化アルミニウム / ショットキー構造 / AlGaN / ヘテロ構造 / AlGaN/GaN / ヘテロ接合 / 電気・電子材料 … More Except Principal Investigator 電流コラプス / MOCVD結晶成長 / 欠陥準位 / スイッチング特性 / AlGaN/GaNヘテロ構造 / ショットキーダイオード / 有機金属気相成長 / デバイス･スイッチング特性 / デバイス・スイッチング特性 / 炭素 / GaNバッファ層 / MOCVD / イエローバンド / DLOS / フォトキャパシタンス / 残留炭素 / 結晶成長 / 半導体欠陥準位 / 電子・電気材料 / 結晶工学 / 半導体物性 / 窒化物半導体 / 電気・電子材料 Less

界面構造最適化による窒化物半導体デバイス型水素センサの高性能化Principal Investigator
- Principal Investigator
  
  色川芳宏
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science
Improvement of GaN MOSFETs by controlling GaN interfacesPrincipal Investigator
- Principal Investigator
  
  Irokawa Yoshihiro
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science
Investigation on hydrogen sensors using semiconductor devicesPrincipal Investigator
- Principal Investigator
  
  IROKAWA Yoshihiro
- Project Period (FY)
  2017 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfacesPrincipal Investigator
- Principal Investigator
  
  Irokawa Yoshihiro
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures
- Principal Investigator
  
  NAKANO Yoshitaka
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chubu University
Hydrogen sensors using nitride-based semiconsuctor devicesPrincipal Investigator
- Principal Investigator
  
  IROKAWA Yoshihiro
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Band-gap states and quality analyses of AlGaN/GaN hetero-structures
- Principal Investigator
  
  NAKANO Yoshitaka
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chubu University
Research on nitride based semiconductor power devicesPrincipal Investigator
- Principal Investigator
  
  IROKAWA Yoshihiro
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science

[Journal Article] Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen2024
- Author(s)
  Irokawa Yoshihiro、Ohi Akihiko、Nabatame Toshihide、Koide Yasuo
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 13 Issue: 4 Pages: 045002-045002
- DOI
  10.1149/2162-8777/ad3959
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03949
[Journal Article] Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs2023
- Author(s)
  Irokawa Yoshihiro、Mitsuishi Kazutaka、Izumi Takatomi、Nishii Junya、Nabatame Toshihide、Koide Yasuo
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 12 Issue: 5 Pages: 055007-055007
- DOI
  10.1149/2162-8777/acd1b4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04587
[Journal Article] Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics2022
- Author(s)
  Irokawa Yoshihiro、Inoue Mari、Nabatame Toshihide、Koide Yasuo
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 11 Issue: 8 Pages: 085010-085010
- DOI
  10.1149/2162-8777/ac8a70
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04587
[Journal Article] Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates2021
- Author(s)
  Irokawa Yoshihiro、Ohki Tomoko、Nabatame Toshihide、Koide Yasuo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 6 Pages: 068003-068003
- DOI
  10.35848/1347-4065/ac0260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04587
[Journal Article] Effect of hydrogen on Pt/GaN Schottky diodes2020
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06365
[Journal Article] Effect of hydrogen on Pt/GaN Schottky diodes2020
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04587
[Journal Article] Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors2019
- Author(s)
  Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata and Yasuo Koide
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Pages: 100915-100915
- NAID
  210000157181
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06365
[Journal Article] Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001)2018
- Author(s)
  Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto and Yasuo Koide
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Pages: 098003-098003
- NAID
  210000149649
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06365
[Journal Article] Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy2018
- Author(s)
  Yoshihiro Irokawa, Kazutaka Mitsuishi, Toshihide Nabatame, Koji Kimoto and Yasuo Koide
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Pages: 118003-118003
- NAID
  210000149779
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06365
[Journal Article] Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001)2017
- Author(s)
  Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, and Yasuo Koide
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Pages: 128004-128004
- NAID
  210000148476
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06365
[Journal Article] Electron microscopy studies of the intermediate layers at the SiO2/GaN interface2017
- Author(s)
  Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, and Yasuo Koide
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Pages: 110312-110312
- NAID
  210000148411
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06365
[Journal Article] First-principles calculations of semiconducting TiMgN22016
- Author(s)
  Yoshihiro Irokawa and Mamoru Usami
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000147083
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420286
[Journal Article] First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces2015
- Author(s)
  Yoshihiro Irokawa and Mamoru Usami
- Journal Title
  
  Sensors
  
  Volume: 15 Issue: 6 Pages: 14757-14765
- DOI
  10.3390/s150614757
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26420286
[Journal Article] Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures2015
- Author(s)
  Yoshitaka Nakanoa, Yoshihiro Irokawa and Masatomo Sumiya
- Journal Title
  
  Philosophical Magazine Letters
  
  Volume: 95 Issue: 6 Pages: 333-339
- DOI
  10.1080/09500839.2015.1062154
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420286, KAKENHI-PROJECT-25420300
[Journal Article] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2014
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Journal Title
  
  Materials Research Society Symposium Proceedings
  
  Volume: 1635 Pages: 1-6
- DOI
  10.1557/opl.2014.102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420300
[Journal Article] Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN　Schottky Barrier Diodes2014
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  ECS Electrochemistry Letters
  
  Volume: 3 Issue: 11 Pages: B17-B19
- DOI
  10.1149/2.0041411eel
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23560380, KAKENHI-PROJECT-26420286
[Journal Article] Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors2013
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113 Issue: 2
- DOI
  10.1063/1.4775410
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560380
[Journal Article] Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures2013
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112(10) Issue: 10 Pages: 106103-106103
- DOI
  10.1063/1.4767367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] SBDs on AlN Free-Standing Substrates2012
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 4R Pages: 040206-040206
- DOI
  10.1143/jjap.51.040206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560380
[Journal Article] Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt.GaN diodes2011
- Author(s)
  Y.Irokawa
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 108
  
  Pages: 94501-94501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Hydrogen Sensors Using Nitride-Based Semiconductor Diodes : The Role of Metal/Semiconductor Interfaces2011
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  Sensors
  
  Volume: 11 Pages: 674-695
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures2011
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: 15(2) Issue: 2 Pages: H44-H46
- DOI
  10.1149/2.025202esl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Hydrogen Sensors Using Nitride-Based Semiconductor Diodes : The Role of Metal/Semiconductor Interfaces2011
- Author(s)
  Y.Irokawa
- Journal Title
  
  Sensors 11
  
  Pages: 674-695
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Photo-Capacitance Spectroscopy investigation of Deep-Level Defects in AlGaN/GaN hetero-structures with different current collapses2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Journal Title
  
  physica status solidi (Rapid Research Letters)
  
  Volume: VOL.4 Pages: 374-376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses Phys.2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Journal Title
  
  Status Solidi RRL 4
  
  Pages: 374-376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Photo-Capacitance Spectroscopy Investigation of Deep-Level Defects in AlGaN/GaN hetero-structures with different current collapses2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 4(12) Issue: 12 Pages: 374-376
- DOI
  10.1002/pssr.201004421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560309
[Journal Article] Hydrogen-induced change in the electrical properties of metal-insulator-semiconductor Pt-GaN diodes2010
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes2009
- Author(s)
  Yoshihiro Irokawa
- Journal Title
  
  PHYSICA STATUS SOLID 3
  
  Pages: 266-268
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes, Phys.2009
- Author(s)
  Y.Irokawa, N.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano
- Journal Title
  
  Status Solidi RRL 3
  
  Pages: 266-268
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Journal Article] Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes2009
- Author(s)
  N.Matsuki, Y.Irokawa, T.Matsui, M.Kondo, M.Sumiya
- Journal Title
  
  APPLIED PHYSICS EXPRESS 2
  
  Pages: 92201-92201
- NAID
  10025517692
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760241
[Patent] 水素ガスセンサーおよびそのセンサーの使用方法2022
- Inventor(s)
  色川芳宏、生田目俊秀
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-139622
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-20K04587
[Patent] 酸化膜の膜質評価方法2022
- Inventor(s)
  色川芳宏、生田目俊秀
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-142355
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-20K04587
[Patent] 半導体装置および半導体装置の製造方法2018
- Inventor(s)
  色川、生田目、三石、木本、小出
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-144691
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-17K06365
[Patent] 半導体装置および半導体装置の製造方法2018
- Inventor(s)
  色川、生田目、三石、木本、小出
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-144690
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-17K06365
[Patent] 半導体基板、半導体基板の製造方法およびそれを用いた半導体装置2018
- Inventor(s)
  色川、生田目、三石、木本、小出
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-243227
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-17K06365
[Patent] 窒化ガリウム系の半導体装置及びその製造方法2017
- Inventor(s)
  生田目俊秀、色川　芳宏、他6名
- Industrial Property Rights Holder
  物質・材料研究機構、富士電機
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-129329
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-17K06365
[Patent] ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法2017
- Inventor(s)
  生田目俊秀、色川　芳宏、他3名
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-128960
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-17K06365
[Patent] ｎ型半導体材料、ｐ型半導体材料および半導体素子2016
- Inventor(s)
  色川　芳宏、宇佐見　護
- Industrial Property Rights Holder
  色川　芳宏、宇佐見　護
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-012045
- Filing Date
  2016-06-17
- Data Source
  KAKENHI-PROJECT-26420286
[Patent] 密封型窒化物半導体素子及びその製造方法2013
- Inventor(s)
  色川　芳宏
- Industrial Property Rights Holder
  色川　芳宏
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-010755
- Filing Date
  2013-01-24
- Data Source
  KAKENHI-PROJECT-23560380
[Patent] AlN単結晶ダイオード及びその製造方法2012
- Inventor(s)
  色川芳宏
- Industrial Property Rights Holder
  色川芳宏
- Industrial Property Number
  2012-016926
- Filing Date
  2012
- Data Source
  KAKENHI-PROJECT-23560380
[Presentation] Crystalline intermediate layers in oxides/GaN interfaces2018
- Author(s)
  Yoshihiro Irokawa, Kazutaka Mitsuishi, Toshihide Nabatame, Koji Kimoto and Yasuo Koide
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06365
[Presentation] Comprehensive study of native oxides on GaN2018
- Author(s)
  Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto and Yasuo Koide
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06365
[Presentation] 窒化ガリウムトランジスタに原子レベルで平坦な結晶層を新発見2017
- Author(s)
  色川芳宏、三石和貴
- Organizer
  電気学会「次世代化合物半導体デバイスの機能と応用(第2期)」調査専門委員会
- Invited
- Data Source
  KAKENHI-PROJECT-17K06365
[Presentation] 水素とGaNデバイスの相互作用機構の研究2017
- Author(s)
  色川芳宏
- Organizer
  第16回 GaN研究戦略会議＿研究WG
- Invited
- Data Source
  KAKENHI-PROJECT-17K06365
[Presentation] Surface analysis of native oxides on GaN(0001): An LEIS and RHEED study2017
- Author(s)
  Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, and Yasuo Koide
- Organizer
  第１８回「イオンビームによる表面・界面解析」特別研究会
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06365
[Presentation] Electrochemical Impedance Spectroscopy Study of Hydrogen Interaction with Nitride-Based Semiconductor Diodes2016
- Author(s)
  Yoshihiro Irokawa
- Organizer
  10th International Symposium on　Electrochemical Impedance Spectroscopy
- Place of Presentation
  Toxa, Spain
- Year and Date
  2016-06-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420286
[Presentation] 半導体デバイス型水素センサの動作機構の研究2016
- Author(s)
  色川芳宏
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-26420286
[Presentation] 半導体デバイスを用いた水素センサーの動作機構の解明2015
- Author(s)
  色川芳宏
- Organizer
  NIMS ナノシミュレーションワークショップ2015
- Place of Presentation
  学術総合センター
- Year and Date
  2015-11-27
- Invited
- Data Source
  KAKENHI-PROJECT-26420286
[Presentation] Carbon-Related Deep-Level Defects and Carrier Trapping Characteristics in AlGaN/GaN Hetero-Structures2015
- Author(s)
  Y. Nakano, Y. Irokawa, M. Sumiya, S. Yagi, H. Kawai
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijing
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] AlGaN/GaNヘテロ構造の炭素関連欠陥準位とターンオン電流回復特性2014
- Author(s)
  中野由崇，色川芳宏，角谷正友, 住田行常，八木修一, 河合弘治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations2013
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Organizer
  2013 Materials Research Society Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston)
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2013
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
- Organizer
  International Symposium on Compound Semiconductors 2013
- Place of Presentation
  Kobe Convention Center
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Hydrogen sensors based on GaN diodes: The sensing mechanism2012
- Author(s)
  Yoshihiro Irokawa
- Organizer
  IEEE SENSORS 2012
- Place of Presentation
  Taipei International Convention Center,Taipei,Taiwan
- Data Source
  KAKENHI-PROJECT-23560380
[Presentation] Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures2012
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Organizer
  International Workshop on Nitride Semiconductors2012
- Place of Presentation
  札幌コンベンションセンター(札幌)Sapporo.
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero -Structures Probed by Photo-Capacitance Spectroscopy2011
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Scottish Exhibition and Conference Centre(Glasgow,UK).
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Solid state hydrogen gas sensing2011
- Author(s)
  Yoshihiro Irokawa
- Organizer
  Nano Korea 2011(招待講演)
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-23560380
[Presentation] Hydrogen Interaction with GaN MIS Diodes2011
- Author(s)
  Yoshihiro Irokawa
- Organizer
  26th ICDS
- Place of Presentation
  Nelson, New Zealand
- Data Source
  KAKENHI-PROJECT-23560380
[Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy2011
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai
- Organizer
  3^<rd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  名古屋工業大学(愛知県)
- Year and Date
  2011-03-08
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] Current Collapses in AlGaN/GaN Hetero-structures Studied by Deep-level Optical Spectroscopy2010
- Author(s)
  Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai
- Organizer
  Materials Research Society 2010 Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston, USA)
- Year and Date
  2010-11-30
- Data Source
  KAKENHI-PROJECT-22560309
[Presentation] C-t法によるAlGaN/GaNヘテロ構造のターンオン回復特性評価
- Author(s)
  中野由崇, 色川芳宏, 角谷正友, 八木修一, 河合弘治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学 (北海道・札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420300
[Presentation] Carbon-Related Deep-Level Defects and Carrier-Trapping Characteristics in AlGaN/GaN Hetero-Structures
- Author(s)
  Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Shuichi Yagi, Hiroji Kawai
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
- Place of Presentation
  名古屋大学 (愛知県・名古屋市)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-25420300

1. NAKANO Yoshitaka (60394722)

# of Collaborated Projects: 5 results

# of Collaborated Products: 18 results
2. SUMIYA Masatomo (20293607)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
3. KAWAI Hiroji

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results

IROKAWA Yoshihiro 色川 芳宏

Research Projects

Research Products

Co-Researchers

界面構造最適化による窒化物半導体デバイス型水素センサの高性能化Principal Investigator

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Improvement of GaN MOSFETs by controlling GaN interfacesPrincipal Investigator

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Investigation on hydrogen sensors using semiconductor devicesPrincipal Investigator

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Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfacesPrincipal Investigator

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Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures

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Hydrogen sensors using nitride-based semiconsuctor devicesPrincipal Investigator

Principal Investigator

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Band-gap states and quality analyses of AlGaN/GaN hetero-structures

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Research on nitride based semiconductor power devicesPrincipal Investigator

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[Journal Article] Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen2024

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[Journal Article] Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs2023

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[Journal Article] Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics2022

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[Journal Article] Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates2021

Author(s)

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[Journal Article] Effect of hydrogen on Pt/GaN Schottky diodes2020

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[Journal Article] Effect of hydrogen on Pt/GaN Schottky diodes2020

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IROKAWA Yoshihiro 色川芳宏

[Journal Article] Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN　Schottky Barrier Diodes2014