taishi toshinori 太子敏則

… Alternative Names

Taishi Toshinori 太子敏則

TAISHI Toshinori 太子敏則

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Researcher Number	90397307
Other IDs
Affiliation (Current)	2025: 信州大学, 学術研究院工学系, 教授
Affiliation (based on the past Project Information) *help	2025: 信州大学, 学術研究院工学系, 教授 2020 – 2023: 信州大学, 学術研究院工学系, 教授 2016 – 2020: 信州大学, 学術研究院工学系, 准教授 2017: 信州大学, 教育学部, 准教授 2011 – 2012: 信州大学, 工学部, 准教授 … More 2010: 信州大学, カーボン科学研究所, 助教 2007 – 2009: Toboku Univereity, Institute of Material Ressarch, Assistant Professor 2006: 東北大学, 金属材料研究所, 研究員 Less
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Applied materials science/Crystal engineering / Crystal engineering Except Principal Investigator Basic Section 32020:Functional solid state chemistry-related / Science and Engineering / Crystal engineering / Applied materials science/Crystal engineering / Science and Engineering / Nanomaterials/Nanobioscience
Keywords	Principal Investigator 溶液成長 / 結晶成長 / 金属溶媒 / 炭化ケイ素 / 引き上げ法 / ゲルマニウム / 結晶評価 / パワーデバイス / 厚膜 / β型酸化ガリウム … More / 表面エネルギー / SiC / 長尺成長 / 二次元核形成エネルギー / 平坦成長 / 接触角 / 炭化ケイ素（SiC） / 高品質化 / ワイドギャップ半導体 / 新規成長方法 / セラミック原料 / 新規方法 / 溶質同時供給 / SiCセラミックス / 溶質連続供給 / 溶剤金属 / セラミック / 改良型TSSG法 / 酸化ホウ素 / 高強度 / 低転位密度 / 輸送機構 / 酸素 / 欠陥形成機構 / 析出物 / 不純物添加 / 転位 / 成長時導入欠陥 … More Except Principal Investigator 結晶工学 / 格子欠陥 / 電子状態 / 光電子分光 / 固体電解質 / Thin Film / Single Crystal / Solid Electrolyte / Mixed Conductor / Interface Ionics / 固体イオニクス / 電荷蓄積 / 単結晶 / 界面 / 薄膜 / 全固体電池 / キャリア再結合 / SiC / BaSi2 / Si / フォトルミネッセンス / イメージング / 発光イメージング / 半導体物性 / データ科学 / 定量化 / 欠陥物性 / 結晶評価 / 機械学習 / 結晶欠陥 / 半導体結晶 / 発光イメージ / Platinum crucible / Top-seeded solution growth / Polarization process / Piezoelectricity / Vertical Bridgman method / Potassium Niobate / 小傾角境界 / リネージ / UWB無線システム / X線トポグラフ / SAWWフィルタ / LN単結晶 / KN単結晶 / ウエハ加工 / KNウエハ加工 / 電気機械結合係数 / 相転移点制御 / 分域制御 / 垂直ブリッジマン(VB)法 / ニオブ酸カリュウム(KN)単結晶 / 転位 / 結晶成長 / ナノ材料 / ナイトライド / フォトルミネセンス / ラマン散乱 / ナノ構造体 / 局在近接場分光法 / 透過電子顕微鏡 / ナノ材料評価 Less

液相エピタキシャル法によるβ-Ga2O3厚膜成長と高耐圧パワーデバイスの検討Principal Investigator
- Principal Investigator
  
  太子敏則
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Shinshu University
電場印加型ARPESによる固体電解質単結晶におけるイオン伝導特性ー電子状態相関の探索
- Principal Investigator
  
  伊藤孝寛
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 32020:Functional solid state chemistry-related
- Research Institution
  Nagoya University
Relationship between 2D-nucleation and long crystal growth in solution growth of SiC without molten silicon.Principal Investigator
- Principal Investigator
  
  Taishi Toshinori
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Shinshu University
Interface Ionics : Fabrication of model systems and their fundamental ion dynamics
- Principal Investigator
  
  IRIYAMA YASUTOSHI
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Quantification of electrical properties of defects in semiconductor crystals from a luminescence image
- Principal Investigator
  
  Kutsukake Kentaro
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Institute of Physical and Chemical Research
  Nagoya University
  Tohoku University
Solution growth of SiC by improved TSSG technique from metal solvent using SiC ceramicsPrincipal Investigator
- Principal Investigator
  
  Taishi Toshinori
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Shinshu University
Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3Principal Investigator
- Principal Investigator
  
  TAISHI Toshinori
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Shinshu University
ナイトライド半導体結晶中の転位の運動特性と電子・光学物性の解明
- Principal Investigator
  
  米永一郎
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Formation mechanism of grown-in defects in Czochralski germanium crystal growthPrincipal Investigator
- Principal Investigator
  
  TAISHI Toshinori
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Optical properties of semiconductor nanostructures studied by Near-field optical spectroscopy in a TEM
- Principal Investigator
  
  OHNO Yutaka
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Tohoku University
Single Crystal Growth and Domain Control of Potassium Niobate Crystals by Vertical Bridgman method
- Principal Investigator
  
  HOSHIKAWA Keigo
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Shinshu University

[Book] Germanium : Properties, Production and Applications2012
- Author(s)
  T.Taishi, I.Yonenaga
- Publisher
  Nova Science Publishers, Inc.(in press)
- Data Source
  KAKENHI-PROJECT-22686002
[Book] Germanium: Properties, Production and Applications2012
- Author(s)
  T. Taishi, I. Yonenaga
- Total Pages
  17
- Publisher
  Growth of Ge crystals with extremely low dislocation density
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Effect of contact angle between SiC and metal solvents on growth surface morphology in solution growth of SiC2022
- Author(s)
  Tomoya Iwai, Katsuya Ozeki, Gouki Nakashima, Toshinori Taishi
- Journal Title
  
  Proceedings of The 8th International Symposium on Advanced Science and Technology of Silicon Materials
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-20H02637
[Journal Article] 固体電解質材料のバルク単結晶育成と特性評価実験2021
- Author(s)
  藤原靖幸, 松浦直人, 森分博紀, 太子敏則
- Journal Title
  
  Ceramics Japan
  
  Volume: 56 Pages: 611-614
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-19H05813
[Journal Article] Polycrystalline SiC coating on large-sized SiC ceramics using Si vapor2021
- Author(s)
  KAGAMI Yuuki、YAMAMOTO Syuuichi、YOKOBAYASHI Yuta、UCHIDA Ryunosuke、SUZUKI Koki、TARUTA Seiichi、TAISHI Toshinori
- Journal Title
  
  J. Ceram. Soc. Japan
  
  Volume: 129 Issue: 12 Pages: 707-713
- DOI
  10.2109/jcersj2.21121
- NAID
  130008123899
- ISSN
  1348-6535, 1882-0743
- Year and Date
  2021-12-01
- Language
  English
- Data Source
  KAKENHI-PROJECT-20H02637
[Journal Article] Effect of cobalt addition to Si-Cr solvent in top-seeded solution growth2020
- Author(s)
  Koangyong Hyun, Seong-Jong Kim, Toshinori Taishi
- Journal Title
  
  Applied Surface Science
  
  Volume: 513 Pages: 145798-145798
- DOI
  10.1016/j.apsusc.2020.145798
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02637
[Journal Article] The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC2020
- Author(s)
  Koki Suzuki, Toshinori Taishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 2 Pages: 025504-025504
- DOI
  10.35848/1347-4065/ab6a27
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02637
[Journal Article] Solution Growth of SiC from the Crucible Bottom with Dipping under Unsaturation State of Carbon in Solvent2018
- Author(s)
  Taishi Toshinori、Takahashi Masaru、Tsuchimoto Naomichi、Suzuki Koki、Hyun Koang Yong
- Journal Title
  
  Materials Science Forum
  
  Volume: 924 Pages: 51-54
- DOI
  10.4028/www.scientific.net/msf.924.51
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03856, KAKENHI-PROJECT-16K04947
[Journal Article] Solution growth of SiC without molten Si using concave ceramic SiC feed2018
- Author(s)
  Koki Suzuki, Toshinori Taishi
- Journal Title
  
  The Proceedings of the 8th Forum on Sceience and Technology of Silicon Material 2018
  
  Volume: 1 Pages: 377-381
- Data Source
  KAKENHI-PROJECT-16K04947
[Journal Article] Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC2018
- Author(s)
  Koangyong Hyun, Toshinori Taishi, Koki Suzuki, Katsuya Teshima
- Journal Title
  
  Material Science Forum
  
  Volume: 924 Pages: 43-46
- DOI
  10.4028/www.scientific.net/msf.924.43
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Journal Article] Solution growth of SiC without molten Si using concave ceramic SiC feed2018
- Author(s)
  Koki Suzuki, Toshinori Taishi
- Journal Title
  
  The 8th Forum on Science and Technology of Silicon Material
  
  Volume: 8 Pages: 377-381
- Data Source
  KAKENHI-PROJECT-16H03856
[Journal Article] Numerical simulation of carbon concentration in top-seeded solution growth of SiC2018
- Author(s)
  Naomichi Tsuchimoto, Shingo Ehara, Toshinori Taishi
- Journal Title
  
  The 8th Forum on Science and Technology of Silicon Material
  
  Volume: 8 Pages: 372-376
- Data Source
  KAKENHI-PROJECT-16H03856
[Journal Article] Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si2018
- Author(s)
  Suzuki Koki、Hyun Koang Yong、Taishi Toshinori
- Journal Title
  
  Materials Science Forum
  
  Volume: 924 Pages: 35-38
- DOI
  10.4028/www.scientific.net/msf.924.35
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03856, KAKENHI-PROJECT-16K04947
[Journal Article] The Solution Growth of SiC from Solvents With or Without Si2017
- Author(s)
  K. Suzuki, T. Taishi
- Journal Title
  
  Proc. of The 7th International Symposium on Advanced Science and Technology of Silicon Materials
  
  Volume: 1 Pages: 297-300
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16K04947
[Journal Article] Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies2013
- Author(s)
  K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K.Kutsukake, Y. Ohno, M. Suezawa, I.Yonenaga
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113 Issue: 7
- DOI
  10.1063/1.4792061
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Oxygen in Ge crystals grown by the B_2O_3 encapsulated Czochralski method2012
- Author(s)
  I. Yonenaga, T. Taishi, H. Ise, Y. Murao, K. Inoue, T. Ohsawa, Y. Tokumoto, Y. Ohno, Y. Hashimoto
- Journal Title
  
  Physica B
  
  Volume: 407 Issue: 15 Pages: 2932-2934
- DOI
  10.1016/j.physb.2011.08.038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Characteristics of germanium crystals doped with boron-related compounds2012
- Author(s)
  T. Taishi, Y. Murao, I. Yonenaga, K. Hoshikawa
- Journal Title
  
  The 6th International Symposium on Advanced Science and Technology of Sillicon Materials
  
  Pages: 71-74
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B_2O_32012
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T.Ohsawa, I. Yonenaga
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 360 Pages: 47-51
- DOI
  10.1016/j.jcrysgro.2011.11.051
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] 液状酸化ホウ素(B_2O_3)を用いた無転位・酸素添加ゲルマニウム結晶の育成2011
- Author(s)
  太子敏則, 米永一郎
- Journal Title
  
  まてりあ
  
  Volume: 50 Pages: 431-438
- NAID
  10029693244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Oxygen doped Ge crystals Czochralski-grown from the B_2O_3-fully -covered melt2011
- Author(s)
  T. Taishi, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
- Journal Title
  
  Miroelectro. Eng
  
  Volume: 88 Issue: 4 Pages: 496-498
- DOI
  10.1016/j.mee.2010.10.015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Optical properties of fresh dislocations in GaN2011
- Author(s)
  I.Yonenaga, Y.Ohno, T.Taishi, Y.Tokumoto, H.Makino, T.Yao, Y.Kamimura, K.Edagawa
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 415-417
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016002
[Journal Article] Behavior of oxygen-related thermal donors in Ge crystals Czochralski-grown from the melt covered fully by B_2O_32011
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
- Journal Title
  
  J. Phys. Conf. Ser
  
  Volume: 281 Pages: 012011-012011
- DOI
  10.1088/1742-6596/281/1/012011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Impurity effects on the generation and velocity of dislocations in Ge2011
- Author(s)
  Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno , I. Yonenaga
- Journal Title
  
  J. Appl. Phys
  
  Volume: 109 Issue: 11
- DOI
  10.1063/1.3592226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Oxygen doped Ge crystals Czochralski-grown from the B_2O_3-fully-covered melt2011
- Author(s)
  T.Taishi, H.Ise, Y Murao, T.Ohsawa, Y Tokumoto, Y.Ohno, I.Yonenaga
- Journal Title
  
  Miroelectro.Eng.
  
  Volume: 88 Pages: 496-498
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy2010
- Author(s)
  S.H.Park, T.Minegishi, H.J.Lee, J.S.Park, I.H.Im, T.Yao, D.C.Oh, T.Taishi, I.Yonenaga, J.H.Chang
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016002
[Journal Article] Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth2010
- Author(s)
  T.Taishi, Y.Ohno, I.Yonenaga
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 2409-2412
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760003
[Journal Article] Evaluations of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B_2O_3 liquid, Proc2010
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
- Journal Title
  
  The Forum on the Science and Technology of Silicon Materials
  
  Pages: 28-33
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Evaluations of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B_2O_3 liquid2010
- Author(s)
  T.Taishi, Y.Hashimoto, H.Ise, Y Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
- Journal Title
  
  Proc.The Forum on the Science and Technology of Silicon Materials 2010
  
  Pages: 28-33
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth2010
- Author(s)
  T. Taishi, Y. Ohno, I. Yonenaga
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 2409-2412
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760003
[Journal Article] Czochralski-growth of germanium crystals containing high concen-trations of oxygen impurities2010
- Author(s)
  T.Taishi, H.Ise, Y.Murao, T.Ohsawa, M.Suezawa, Y.Tokumoto, Y.Ohno, K.Hoshikawa, I.Yonenaga
- Journal Title
  
  J.Cryst.Growth
  
  Volume: 312 Pages: 2783-2787
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Czochralski growth of Ge crystal from the melt partially covered by B_2O_3 liquid for reduction of dislocation density2010
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
- Journal Title
  
  Proc. The Forum on the Science and Technology of Silicon Materials
  
  Pages: 426-432
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Czochralski growth of Ge crystal from the melt partially covered by B_2O_3 liquid for reduction of dislocation density2010
- Author(s)
  T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
- Journal Title
  
  Proc.The Forum on the Science and Technology of Silicon Materials 2010
  
  Pages: 426-432
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] Czochralski -growth of germanium crystals containing high concen-trations of oxygen impurities2010
- Author(s)
  T. Taishi, H. Ise, Y. Murao, T. Ohsawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa, I. Yonenaga
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 312 Issue: 19 Pages: 2783-2787
- DOI
  10.1016/j.jcrysgro.2010.05.045
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22686002
[Journal Article] High-Quality p-Type ZnO Films Grown by Co-Doping of N and T on Zn-Face ZnO Substrates2010
- Author(s)
  S.Park, T.Minegishi, D.Oh, H Lee, T.Taishi, J.Park, M.Jung, J.Chang, I.Im, J.Ha, S.Hong, I.Yonenaga, T.Chikyow, T.Yao
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016002
[Journal Article] Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially- covered melt2009
- Author(s)
  T. Taishi, Y. Ohno, I. Yonenaga
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 4615-4618
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760003
[Journal Article] Recent knowledge on strength and dislocation mobility in wide bandgap semiconductors2009
- Author(s)
  I.Yonenaga, Y.Ohno, T.Taishi, Y.Tokumoto
- Journal Title
  
  Physica B 404
  
  Pages: 4999-5001
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016002
[Journal Article] In-situ analysis of optoelectronic properties of dislocations in ZnO by TEM observations2009
- Author(s)
  Y. Ohno, T. Taishi, I. Yonenaga
- Journal Title
  
  physica status solidi (a) 206
  
  Pages: 1904-1911
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Investigation on the ZnO:N films grown on(0001)and(0001)ZnO templates by plasma-assilted molecular beam epitaxy2009
- Author(s)
  S.H.Park, J.H.Chang, T.Minegishi, J.S.Park, I.H.Im, M.Ito, T.Taishi, S.K.Hong, D.C.Oh, M.W.Cho, T.Yao
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2167-2171
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016002
[Journal Article] Reduction of grown-in dislocation density in Ge Czochralski-grown from the B_2O_3-partially-covered melt2009
- Author(s)
  T.Taishi, Y.Ohno, I.Yonenaga
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 4615-4618
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760003
[Journal Article] In-situ analysis of optoelectronic properties of dislocations in ZnO by TEM observations2009
- Author(s)
  Y.Ohno, T.Taishi, I.Yonenaga
- Journal Title
  
  physica status solidi(a) 206
  
  Pages: 1904-1911
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Light emission due to dislocations in wurtzite ZnO bulk single crystals freshly introduced by plastic deformation2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, I. Yonenaga
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Formation of multiple nanoscale twin boundaries that emit intense monochromatic light in indirect-gap AIGaAs epilayers2008
- Author(s)
  Y. Ohno, K. Shoda, T. Taishi, I. Yonenaga, and S. Takeda
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7633-7637
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Optical properties of dislocations in wurtzite ZnO single-crystals introduced at elevated temperatures2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, and I. Yonenaga
- Journal Title
  
  Journal of Applied Physycs 104
- NAID
  120002338271
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Formation of multiple nanoscale twin boundaries that emit intense monochromatic light in indirect-gap AlGaAs epilayers2008
- Author(s)
  Y. Ohno, K. Shoda, T. Taishi, I. Yonenaga, S. Takeda
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7633-7637
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Segregation of boron in germanium2008
- Author(s)
  T. Taishi, Y. Murao, Y Ohno, Y. Yonenaza
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 59-61
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760003
[Journal Article] Light emission due to dislocations in wurtzite ZnO bulk single crystals freshly introduced by plastic deformation2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, and I. Yonenaga
- Journal Title
  
  Applied Physics Letters 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Optical properties of dislocations in wurtzite ZnO single-crystals introduced at elevated temperatures2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, I. Yonenaga
- Journal Title
  
  Journal of Applied Physycs 104
- NAID
  120002338271
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19310072
[Journal Article] Segregation of boron in germanium2008
- Author(s)
  T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 59-61
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760003
[Journal Article] Single crystal growth of Langasite by vertical Bridmen mothod in air and Ar atmosphere2007
- Author(s)
  太子敏則, 林貴之, 深海龍夫, 干川圭吾, 米永一郎
- Journal Title
  
  Journal of crystal growth (印刷中)
- Data Source
  KAKENHI-PROJECT-18360007
[Journal Article] Oxygen defects in langasite(La_3Ga_5SiO_<14>)single crystal grown by vertical Bridgman(VB)method2007
- Author(s)
  T. Taishi
- Journal Title
  
  Physica B 401-402
  
  Pages: 437-440
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360007
[Journal Article] Oxygen defects in langasite (La_3Ga_5SiO_<14>) single crystal grown by vertical Bridgman (VB) method2007
- Author(s)
  T,. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga, K. Hoshikawa
- Journal Title
  
  Physica B 401-402
  
  Pages: 437-440
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Journal Article] Single-crystal growth of langasite (La_3Ga_5SiO_<14> by the vertical Bridgman (VB) method in air and in an Ar atmosphere2007
- Author(s)
  T. Taishi, T. Hayashi, T. Fukami, K. Hoshikawa, I. Yonenaga
- Journal Title
  
  J. Cryst.Growth 304
  
  Pages: 4-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Journal Article] Single-crystal growth of langasite(La_3Ga_5SiO_<14>)by the vertical Bridgman(VB)method in air and in an Ar atmosphere2007
- Author(s)
  T. Taishi
- Journal Title
  
  J. Cryst. Growth 304
  
  Pages: 4-6
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360007
[Journal Article] The Characteristics of the La_3Ga_5SiO_<14> Single Crystals Grown by Vertical Bridgman Method in Ar Atomosphere2006
- Author(s)
  N. Banba, K. Kato, T. Taishi, T. Hayashi. K. Hoshikawa, T. Fukami
- Journal Title
  
  Materials Science Forum 510-511
  
  Pages: 842-845
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Patent] SiC単結晶の製造方法2018
- Inventor(s)
  太子敏則、玄光龍、鈴木皓己、土本直道
- Industrial Property Rights Holder
  信州大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-038847
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-16K04947
[Patent] 低転位密度ゲルマニウム単結晶の製造方法2009
- Inventor(s)
  米永一郎, 太子敏則
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2009-109980
- Filing Date
  2009-04-28
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] 電池材料のバルク単結晶育成2023
- Author(s)
  藤原靖幸, 太子敏則
- Organizer
  日本結晶成長学会バルク成長分科会　第113回研究会
- Data Source
  KAKENHI-PLANNED-19H05813
[Presentation] リチウム固体電解質Li_3x_La_2/3-x_TiO_3_単結晶の角度分解光電子分光2023
- Author(s)
  小山正太郎、山本凌、仲武昌史、高倉将一、田中清尚、藤原靖幸、太子敏則、森分博紀、入山恭寿、伊藤孝寛、
- Organizer
  日本物理学会
- Data Source
  KAKENHI-PLANNED-19H05813
[Presentation] 金属溶媒を用いたSiC溶液成長におけるSiCと金属溶媒間の接触角の測定と成長表面に与える影響2022
- Author(s)
  岩井智哉, 尾関克哉, 太子敏則
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] Effect of contact angle between SiC and metal solvents on growth surface morphology in solution growth of SiC2022
- Author(s)
  Tomoya Iwai, Katsuya Ozeki, Gouki Nakashima, Toshinori Taishi
- Organizer
  The 8th International Symposium on Advanced Science and Technology of Silicon Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] 液相シリコンとメタンによる多結晶SiC コーティング2021
- Author(s)
  内田龍之介, 各務祐気, 山本周一, 太子敏則
- Organizer
  第50回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] 液相SiとCH4ガスによるSiCコーティングの数値解析2021
- Author(s)
  内田龍之介, 各務祐気, 山本周一, 太子敏則
- Organizer
  第15回日本フラックス成長研究発表会
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] Cr溶媒からのSiC溶液成長における長尺化の可能性の検証2021
- Author(s)
  尾関克哉, 岩井智哉, 太子敏則
- Organizer
  第15回日本フラックス成長研究発表会
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] Cr溶媒からのSiC溶液成長における金属溶媒添加効果と表面形態2021
- Author(s)
  尾関克哉, 岩井智哉, 太子敏則
- Organizer
  第50回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] 液相Siを用いたSiCセラミックス全面への多結晶SiCコーティング2021
- Author(s)
  各務祐気，山本周一，内田龍之介，太子敏則
- Organizer
  第50回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] バルク単結晶およびその育成技術からの新たな研究アプローチ2020
- Author(s)
  太子敏則
- Organizer
  応用物理学会北陸・信越支部第５回有機・無機エレクトロニクスシンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-19H05813
[Presentation] バルク単結晶およびその育成技術からの新たな研究アプローチ2020
- Author(s)
  太子敏則
- Organizer
  応用物理学会北陸・信越支部第5回有機無機シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-20H02637
[Presentation] SiC 溶液成長における溶質の溶解・輸送・成長2019
- Author(s)
  太子敏則、鈴木皓己、土本直道
- Organizer
  日本金属学会2019 年春期（第164 回）講演大会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiC 溶液成長における溶質の溶解・輸送・成長2019
- Author(s)
  太子敏則、鈴木皓己、土本直道
- Organizer
  日本金属学会2019 年春期（第164 回）講演大会
- Invited
- Data Source
  KAKENHI-PROJECT-16H03856
[Presentation] SiC溶液法における炭素濃度の経時変化を考慮したシミュレーションとその実測2018
- Author(s)
  土本直道、江原槙吾、太子敏則
- Organizer
  第47回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-16H03856
[Presentation] Si_Cr_Co溶媒からの高品質高速SiC溶液成長2018
- Author(s)
  玄光龍，土本直道，鈴木皓己，太子敏則
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiC溶液法における炭素濃度の経時変化を考慮したシミュレーションとその実測2018
- Author(s)
  土本直道、江原槙吾、太子敏則
- Organizer
  第47回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiCおよび機能性バルク単結晶の育成～融液成長からのSiC溶液成長のアプローチ～2018
- Author(s)
  太子敏則，干川圭吾
- Organizer
  日本学術振興会第161委員会第103回研究会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] 溶質供給源の形状を変化させたCr単一溶媒でのSiC溶液成長2018
- Author(s)
  鈴木皓己、太子敏則
- Organizer
  第47回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiCおよび機能性バルク単結晶の育成～融液成長からのSiC溶液成長のアプローチ～2018
- Author(s)
  太子敏則、干川圭吾
- Organizer
  日本学術振興会第161委員会第103回研究会
- Data Source
  KAKENHI-PROJECT-16H03856
[Presentation] 溶質供給源の形状を変化させたCr単一溶媒でのSiC溶液成長2018
- Author(s)
  鈴木皓己、太子敏則
- Organizer
  第47回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-16H03856
[Presentation] SiC溶液成長における溶液中の炭素濃度の経時変化および成長時の非定常解析2018
- Author(s)
  太子敏則
- Organizer
  日本結晶成長学会バルク成長分科会
- Data Source
  KAKENHI-PROJECT-16H03856
[Presentation] SiC溶液成長における溶液中の炭素濃度の経時変化および成長時の非定常解析2018
- Author(s)
  太子敏則
- Organizer
  日本結晶成長学会バルク分科会第102回研究会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiC溶液成長法における溶媒中のCr組成に対する成長ポリタイプの面内分布及び相対存在割合の評価2017
- Author(s)
  鈴木皓己, 高橋大, 土本直道, 玄光龍, 太子敏則, 村山健太, 原田俊太, 宇治原徹
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] Si_Cr_CおよびSi_Cr_M_C (M=Co, Mn) 溶媒によるSiC溶液成長2017
- Author(s)
  玄光龍，土本直道，鈴木皓己，太子敏則，手嶋勝弥
- Organizer
  第12回日本フラックス成長研究発表会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method2017
- Author(s)
  K. Suzuki, K. Hyun, T. Taishi
- Organizer
  ICSCRM2017（ International　Conference　on　Silicon　Carbide and　Related　Materials 2017）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] Evaluation of Polytytpe of SiC Grown by Top-Seeded Solution Growth Technique Using Various Composition of Cr in Si-Cr Based Solvents2017
- Author(s)
  K. Suzuki, M. Takahashi, N. Tsuchimoto, K. Hyun, T. Taishi, K. Murayama, S. Harada T. Ujihara
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] TSSG法によるSiC溶液成長における溶媒中の炭素の溶解・輸送解析と結晶品質に与える影響2017
- Author(s)
  太子敏則
- Organizer
  第12回日本フラックス成長研究発表会
- Invited
- Data Source
  KAKENHI-PROJECT-16H03856
[Presentation] Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M=Transition　Metals) Solvents for the Solution Growth of SiC2017
- Author(s)
  K. Hyun, T. Taishi, K. Teshima
- Organizer
  ICSCRM2017（ International　Conference　on　Silicon　Carbide and　Related　Materials 2017）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] TSSG法によるSiC溶液成長における種子づけと溶液中の炭素濃度の関係2017
- Author(s)
  太子敏則、高橋大、土本直道、鈴木皓己、玄光龍
- Organizer
  第78回応用物理学会秋季講演会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] TSSG法によるSiC溶液成長における溶媒中の炭素の溶解・輸送解析と結晶品質に与える影響2017
- Author(s)
  太子敏則
- Organizer
  第12回日本フラックス成長研究発表会
- Invited
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] Solution growth of SiC from the crucible bottom with dipping under unsaturation state of carbon in solvent2017
- Author(s)
  T. Taishi, M. Takahashi, N. Tsuchimoto, K. Suzuki, K. Hyun
- Organizer
  ICSCRM2017（ International　Conference　on　Silicon　Carbide and　Related　Materials 2017）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] Cr単一溶媒によるSiC溶液成長における育成温度と結晶品質の関係2017
- Author(s)
  鈴木皓己、太子敏則
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜・パシフィコ横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] The effect of the structure of seed attachment on polytype and morphology in solution growth of SiC by TSSG method2017
- Author(s)
  N. Tsuchimoto, K. Suzuki, M. Takahashi, K. Hyun, T. Taishi, K. Murayama, S. Harada and T. Ujihara
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiC溶液法における坩堝からの炭素の溶解現象と結晶品質の関係－炭素溶解速度と炭素溶解度－2017
- Author(s)
  高橋大, 玄光龍, 土本直道, 鈴木皓己, 沓掛穂高, 太子敏則
- Organizer
  電子情報通信学会電子部品・材料研究会(CPM)研究会
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] SiC溶液成長法における坩堝からの炭素溶解速度の検討2016
- Author(s)
  高橋大、鈴木皓己、玄光龍、小林聡、太子敏則
- Organizer
  第3回先進パワー半導体分科会
- Place of Presentation
  つくば・つくば国際会議場
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] Cr溶媒を用いたSiC溶液成長における成長表面とポリタイプ2016
- Author(s)
  鈴木皓己、太子敏則
- Organizer
  第3回先進パワー半導体分科会
- Place of Presentation
  つくば・つくば国際会議場
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] The Solution Growth of SiC from Solvents With or Without Si2016
- Author(s)
  Kouki Suzuki, Toshinori Taishi
- Organizer
  7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-11-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] Solution growth of SiC from metal solvent2016
- Author(s)
  Kouki Suzuki, Toshinori Taishi
- Organizer
  18th International conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋・名古屋国際会議場
- Year and Date
  2016-08-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04947
[Presentation] B2O3で覆われた融液からのCZ-Ge結晶育成における酸素の偏析2013
- Author(s)
  太子敏則，米永一郎，干川圭吾
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B_2O_3で覆われた融液からのCZ-Ge結晶育成における酸素の偏析2013
- Author(s)
  太子敏則, 米永一郎, 干川圭吾
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Year and Date
  2013-03-30
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] 液状B2O3で覆った融液から育成したCZ-Ge結晶中の欠陥評価2012
- Author(s)
  太子敏則
- Organizer
  第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム合同シンポジウム「材料科学のための欠陥制御・評価」
- Place of Presentation
  三浦
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Growth and characterization of germanium crystals from B_2O_3-coverd melt2012
- Author(s)
  T. Taishi
- Organizer
  2012 3CG Collaborative Conference on Crystal Growth
- Place of Presentation
  Orlando, USA.(invited)
- Year and Date
  2012-12-10
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Characteristics of germanium crystals doped with boron-related compounds2012
- Author(s)
  T. Taishi, Y. Murao, I. Yonenaga, K. Hoshikawa
- Organizer
  The 6th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  コナ・ハワイ
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B2O3で覆われた融液からのCZ-Ge結晶育成におけるB、Si、Oの反応2012
- Author(s)
  太子敏則，米永一郎，干川圭吾
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Characteristics of germanium crystals doped with boron-related compounds2012
- Author(s)
  T. Taishi, Y. Murao, I. Yonenaga, K. Hoshikawa
- Organizer
  The 6th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Cona, Hawaii
- Year and Date
  2012-11-21
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] 液状B_2O_3で覆った融液から育成したCZ-Ge結晶中の欠陥評価2012
- Author(s)
  太子敏則
- Organizer
  第22回格子欠陥フォーラム・励起ナノプロセス研究会・理研シンポジウム合同シンポジウム「材料科学のための欠陥制御・評価」
- Place of Presentation
  三浦
- Year and Date
  2012-09-22
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Growth and characterization of germanium crystals from B2O3-coverd melt2012
- Author(s)
  T. Taishi
- Organizer
  2012 3CG Collaborative Conference on Crystal Growth
- Place of Presentation
  オーランド・米国
- Invited
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B_2O_3で覆われた融液からのCZ- Ge結晶育成におけるB、 Si、 Oの反応2012
- Author(s)
  太子敏則,米永一郎,干川圭吾
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Growth of dislocation-free Ga-doped Ge crystals using boron oxide for solar cells2011
- Author(s)
  T. Taishi, Y. Hashimoto, Y. Murao, T. Ohsawa, I. Yonenaga
- Organizer
  The 7th International Conference on Silicon Epitaxy and Heterostructure
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B_2O_3 で覆われた融液から成長したCZ-Ge 結晶中の酸素ドナーの挙動2011
- Author(s)
  太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨,米永一郎
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Growth of dislocation-free Ga-doped Ge crystals using boron oxide for solar cells2011
- Author(s)
  T.Taishi, Y.Hashimoto, Y.Murao, T.Ohsawa, I.Yonenaga
- Organizer
  The 7th International Conference on Silicon Epitaxy and Heterostructure
- Place of Presentation
  ルーヴェン(ベルギー)
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] New Czochralski growth techniques of germaniumcrystals from the melt covered by B_2O_3 liquid2011
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, I. Yonenaga
- Organizer
  The 5th International Workshop on Crystal Growth and Technology
- Place of Presentation
  Berlin, Germany
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] New Czochralski growth techniques of germanium crystals from the melt covered by B_2O_3 liquid2011
- Author(s)
  T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, I.Yonenaga
- Organizer
  The 5th International Workshop on Crystal Growth and Technology
- Place of Presentation
  ベルリン(ドイツ)
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B_2O_3で覆われた融液から成長したCZ-Ge結晶中の酸素ドナーの挙動2011
- Author(s)
  太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 米永一郎
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] CZ-Ge結晶成長における酸素添加と酸素ドナー挙動2011
- Author(s)
  太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 村尾優, 米永一郎
- Organizer
  第41回結晶成長国内会議
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Dislocation density and oxygen concentration in Czochralski germanium crystals grown using boron oxide2010
- Author(s)
  T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
- Organizer
  The 16th International Conference on Crystal Growth
- Place of Presentation
  北京
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B_2O_3で覆われた融液から成長したCZ-Ge結晶中の酸素の特徴2010
- Author(s)
  太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 米永一郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Optical properties of fresh dislocations in GaN and ZnO2010
- Author(s)
  I.Yonenaga, Y.Ohno, T.Taishi, Y.Tokumoto, Y.Kamimura, K.Edagawa
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijinh(中国)
- Data Source
  KAKENHI-PUBLICLY-21016002
[Presentation] Czochralski germanium crystal growth with low dislocation density and oxygen impurities2010
- Author(s)
  T. Taishi
- Organizer
  The Forum on the Science and Technology of Silicon Materials 2010
- Place of Presentation
  Okayama. (invited)
- Year and Date
  2010-11-15
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Evaluation of oxygen-related defects in Ge crystals grown from the melt covered by B_2O_32010
- Author(s)
  T.Taishi, Y.Hashimoto, H.Ise, Y.Murao, T.Ohsawa, Y.Tokumoto, Y.Ohno, I.Yonenaga
- Organizer
  The Forum on the Science and Technology of Silicon Materials 2010
- Place of Presentation
  岡山
- Year and Date
  2010-11-15
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] B_2O_3 で覆われた融液から成長したCZ-Ge 結晶中の酸素の特徴2010
- Author(s)
  太子敏則, 橋本佳男, 伊勢秀彰, 大澤隆亨, 米永一郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-01
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] CZ-Ge結晶成長における酸素の混入と偏析現象2010
- Author(s)
  太子敏則, 伊勢秀彰, 大澤隆亨, 徳本有紀, 米永一郎
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] Evaluation of oxygen-related defects in Ge crystals grown from the melt covered by B_2O_32010
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
- Organizer
  The Forum on the Science and Technology of Silicon Materials 2010
- Place of Presentation
  Okayama
- Year and Date
  2010-11-15
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Czochralski germanium crystal growth with low dislocation density and oxygen impurities2010
- Author(s)
  T.Taishi
- Organizer
  The Forum on the Science and Technology of Silicon Materials 2010
- Place of Presentation
  岡山
- Year and Date
  2010-11-15
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Dislocation density and oxygen concentration in Czochralski germanium crystals grown using boron oxide2010
- Author(s)
  T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
- Organizer
  The 16th International Conference on Crystal Growth
- Place of Presentation
  Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-22686002
[Presentation] Dislocations in wide band gap semiconductors2009
- Author(s)
  米永一郎, 大野裕, 太子敏則, 徳本有紀
- Organizer
  28th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Data Source
  KAKENHI-PUBLICLY-21016002
[Presentation] Atomistic Structure of Dislocations in ZnO Revealed by Opto-TEM and PL Spectroscopy2009
- Author(s)
  Y.Ohno, H.Koizumi, T.Taishi, K.Fujii, H.Goto, T.Yao, I.Yonenaga
- Organizer
  2009 Electronic Materials Conference
- Place of Presentation
  University Park, USA
- Year and Date
  2009-06-24
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] B2O3被覆融液からの無転位Ge単結晶成長と評価2009
- Author(s)
  太子敏則, 伊勢秀彰, 大野裕, 徳本有紀米永一郎
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋
- Year and Date
  2009-11-12
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] 高濃度As添加CZ-Ge結晶成長におけるGeAs析出挙動の解明2009
- Author(s)
  太子敏則, 村尾優, 大野裕, 米永一郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  つくば
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] Electronic properties of dislocations in wurtzite ZnO single-crystals2009
- Author(s)
  Y.Ohno, H.Koizumi, T.Taishi, K.Fujii, H.Goto, T.Yao, I.Yonenaga
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Relationship between morphological features of the growth interface and growth conditions in heavily-impurity doped Si and Ge crystal growth2009
- Author(s)
  T. Taishi, Y. Ohno, I. Yonenaga
- Organizer
  The 17th American Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Lake Geneva, USA
- Year and Date
  2009-08-13
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] B2O3被覆Ge融液からの低転位密度CZ-Ge結晶成長2009
- Author(s)
  太子敏則, 伊勢秀彰, 大野裕, 米永一郎
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] ワイドギャップ半導体の転位の運動特性と光学特性について2009
- Author(s)
  米永一郎、大野裕、太子敏則、徳本有紀
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会・研究会
- Place of Presentation
  主婦会館プラザエフ(東京都)
- Year and Date
  2009-10-02
- Data Source
  KAKENHI-PUBLICLY-21016002
[Presentation] B_2O_3被覆Ge融液からの低転位密度CZ-Ge結晶成長2009
- Author(s)
  太子敏則、伊勢秀彰、大野裕、米永一郎
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] Effects of dislocations on optical properties of wide bandgap GaN and ZnO2009
- Author(s)
  米永一郎, 大野裕, 太子敏則, 徳本有紀
- Organizer
  25th International Conference on Defects in Semiconductors
- Place of Presentation
  Ioffe Institute(ロシア)
- Data Source
  KAKENHI-PUBLICLY-21016002
[Presentation] Strength and dislocation mobility in wide bandgap semiconductors2009
- Author(s)
  米永一郎, 大野裕, 太子敏則, 徳本有紀
- Organizer
  25th International Conference on Defects in Semiconductors
- Place of Presentation
  Ioffe Institute(ロシア)
- Data Source
  KAKENHI-PUBLICLY-21016002
[Presentation] In-situ analysis of optical properties of dislocations in ZnO by opto-TEM2009
- Author(s)
  Y.Ohno, T.Taishi, I.Yonenaga, K.Fujii, H.Goto, T.Yao
- Organizer
  25th International Conference on Defects in Semiconductors
- Place of Presentation
  St.Petersburg, Russia
- Year and Date
  2009-07-23
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Characteristics of Czochralski-grown B- doped Ge crystal2009
- Author(s)
  T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] Characteristics of Czochralski-grown B-doped Ge crystal2009
- Author(s)
  T.Taishi, Y.Murao, Y.Ohno, I.Yonenaga
- Organizer
  European Materials Research Society 2009 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2009-06-08
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] 引き上げ法Ge結晶成長におけるBの偏析と固溶限2008
- Author(s)
  太子敏則, 村尾優, 大野裕, 米永一郎
- Organizer
  第37回結晶成長国内会議
- Place of Presentation
  仙台
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] 引き上げ法Ge結晶成長におけるBの偏析と固溶限2008
- Author(s)
  太子敏則, 村尾優, 大野裕, 米永一郎
- Organizer
  第37回結晶成長国内会議
- Place of Presentation
  仙台市戦災復興記念館
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-20760003
[Presentation] Dislocation-related energy levels in wurtzite ZnO2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, I. Yonenaga
- Organizer
  The 4-th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai, Japan (invited)
- Year and Date
  2008-05-24
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Langasite(La_3Ga_5SiO_<14>)crystals growth by vertical Bridgman(VB)method2008
- Author(s)
  T. Taishi
- Organizer
  4th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai(Japan)
- Year and Date
  2008-05-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Optical properties of dislocations in wurtzite ZnO single-crystals2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi. K. Fujii, H. Goto, T. Yao, and I. Yonenana
- Organizer
  Dislocations 2008
- Place of Presentation
  Hong Kong, China
- Year and Date
  2008-10-15
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Potassium niobate(KNbO_3)crystal growth 1 inch in diameter by the vertical Bridgman(VB)method2008
- Author(s)
  T. Taishi
- Organizer
  4th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai(Japan)
- Year and Date
  2008-05-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Electronic properties of dislocations in wurtzite ZnO bulk single crystals freshly induced by plastic deformation2008
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, K. Fujii, H. Goto, T. Yao, and I. Yonenaga
- Organizer
  The 4-th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-24
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Langataite (La3Ta0.5Ga5.5O14) crystal growth by the vertical Bridgman (VB) method2008
- Author(s)
  T. Taishi, N. Bamba, K. Hoshikawa, I. Yonenaga
- Organizer
  4th Asian Conference on Crystal Growth(発表予定)
- Place of Presentation
  Crystal Technology
- Year and Date
  2008-05-23
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Optical properties of ZnO including fresh dislocations induced by plastic deformation2007
- Author(s)
  Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T.Yao
- Organizer
  Materials Research Society 2007 Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2007-11-15
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Formation of multiple nanoscale twin boundaries acting as twinning superlattice in AlGaAs epilayers2007
- Author(s)
  Y. Ohno, T. Taishi, I. Yonenaga, K. Shoda, and S. Takeda
- Organizer
  The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2007-11-15
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Growth of langasite(La_3Ga_5SiO_<14>)crystals by vertical Bridgman(VB)method in air and an Ar atmosphere for applications to pressure sensors2007
- Author(s)
  T. Taishi
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Salt Lake City(USA)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Oxygen defects in langasite(La_3Ga_5SiO_<14>)single crystal grown by vertical Bridgman method2007
- Author(s)
  T. Taishi
- Organizer
  24th International Conference on Defects in Semiconductors
- Place of Presentation
  Albuquerque, NM(USA)
- Year and Date
  2007-05-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Growth of langasite(La_3Ga_5SiO_14)crystals by vertical Bridgman(VB)method in air and an Ar atmosphere for applications to pressure sensors2007
- Author(s)
  T. Taishi
- Organizer
  15th International Conference on Crystal Growth,
- Place of Presentation
  Salt Lake City(USA)
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Growth of lithium niobate (LiNbO_3) crystals by vertical Bridgman (VB) method2007
- Author(s)
  T. Nishio, T. Taishi, Y. Ohno, I. Yonenaga, K. Hoshikawa
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Salt Lake City (USA)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Electronic properties of twin boundaries in AlGaAs2007
- Author(s)
  Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, K. Shoda and S. Takeda
- Organizer
  24th International Conference on Defects in Semiconductors
- Place of Presentation
  Albuquerque, USA
- Year and Date
  2007-07-22
- Data Source
  KAKENHI-PROJECT-19310072
[Presentation] Oxygen defects in langasite (La_3Ga_5SiO_<14>) single crystal grown by vertical Bridgman method(Mp-14)2007
- Author(s)
  T. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga, K. Hoshikawa
- Organizer
  24th International Conference on Defects in Semiconductors, Albuquerque
- Place of Presentation
  NM (USA)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Oxygen defects in langasite(La_3Ga_5SiO_14)single crystal grown by vertical Bridgman method2007
- Author(s)
  T. Taishi
- Organizer
  24th International Conference on Defects in Semiconductors
- Place of Presentation
  Albuquerque, NM(USA)
- Year and Date
  2007-05-14
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Growth of langasite (La_3Ga_5SiO_<14>) crystals by vertical Bridgman (VB) method in air and an Ar atmosphere for applications to pressure sensors2007
- Author(s)
  T. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga, K. Hoshikawa
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Salt Lake City (USA)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007
[Presentation] Potassium niobate (KNbO_3) crystal growth 1 inch in diameter by the vertical Bridgman (VB) method2007
- Author(s)
  T. Taishi, K. Kudo, Y. Saito, T. Fukami, K. Hoshikawa, I. Yonenaga
- Organizer
  4th Asian Conference on Crystal Growth(発表予定)
- Place of Presentation
  Crystal Technology
- Year and Date
  2007-05-23
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18360007

1. YONENAGA Ichirou (20134041)

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26. 深見龍夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 4 results

taishi toshinori 太子 敏則

Taishi Toshinori 太子 敏則

TAISHI Toshinori 太子 敏則

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液相エピタキシャル法によるβ-Ga2O3厚膜成長と高耐圧パワーデバイスの検討Principal Investigator

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電場印加型ARPESによる固体電解質単結晶におけるイオン伝導特性ー電子状態相関の探索

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Relationship between 2D-nucleation and long crystal growth in solution growth of SiC without molten silicon.Principal Investigator

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Interface Ionics : Fabrication of model systems and their fundamental ion dynamics

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Quantification of electrical properties of defects in semiconductor crystals from a luminescence image

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Solution growth of SiC by improved TSSG technique from metal solvent using SiC ceramicsPrincipal Investigator

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Mechanism of oxygen transportation in Czochralski Ge crystal growth from the melt covered by B_2O_3Principal Investigator

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ナイトライド半導体結晶中の転位の運動特性と電子・光学物性の解明

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Formation mechanism of grown-in defects in Czochralski germanium crystal growthPrincipal Investigator

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Optical properties of semiconductor nanostructures studied by Near-field optical spectroscopy in a TEM

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Single Crystal Growth and Domain Control of Potassium Niobate Crystals by Vertical Bridgman method

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[Book] Germanium : Properties, Production and Applications2012

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[Book] Germanium: Properties, Production and Applications2012

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taishi toshinori 太子敏則

Taishi Toshinori 太子敏則

TAISHI Toshinori 太子敏則