TOYOTA Hiroshi 豊田宏

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豊田宏トヨタヒロシ

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Researcher Number	90400126
Affiliation (Current)	2025: 広島工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2008 – 2010: 弘前大学, 大学院・理工学研究科, 助教
Review Section/Research Field	Except Principal Investigator Electronic materials/Electric materials
Keywords	Except Principal Investigator 誘電体薄膜 / ゲート膜 / プラズマ成膜 / 作成評価技術 / 誘電体 / ECRプラズマ / 低温形成 / MIS / 作成・評価技術

Investigation of deposition process and electrical chracteristics of oxy-nitride dielectrics by using ECR sputtering
- Principal Investigator
  
  TOSHIRO Ono
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hirosaki University

All 2010 2009 2008

All Journal Article Presentation

[Journal Article] Low-Temperature Formation of High-Quality GeO_2 Interlayerfor High-k Gate Dielectrics/Ge by Electron Cyclotron Resonance Plasma Techniques2010
- Author(s)
  Y.Fukuda, Y.Yazaki, Y.Otani, T.Sato, H.Toyota, T.Ono
- Journal Title
  
  IEEE Trans.Electron Devices 57(1)
  
  Pages: 282-287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560287
[Journal Article] Low-Temperature Formation of High-Quality GeO_2 Interlayer for High-k Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques.2010
- Author(s)
  Y.Fukuda, Y.Yazaki, Y.Otani, T.Sato, H.Toyota, T.Ono
- Journal Title
  
  IEEE Trans. Electron Devices 57(1)
  
  Pages: 282-287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560287
[Journal Article] Characterization of tantalum oxy-nitrides deposited by ECR sputtering2009
- Author(s)
  K.Kato, H.Toyota, Y.Jin, T.Ono
- Journal Title
  
  Vacuum 83(3)
  
  Pages: 592-595
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] Effective passivation of Ge surface by high-quality GeO2 formed by Electron-Cyclotron-Resonance plasma oxidation for Ge-based electronic and photonic devices2010
- Author(s)
  Y.Fukuda, Y.Otani, T.Sato, H.Toyota, T.Ono
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] ECRイオンアシスト加工におけるMIS界面制御の検討2010
- Author(s)
  泉康平,豊田宏,福田幸夫,室田淳一,櫻庭政夫,小野俊郎
- Organizer
  2010精密工学会東北支部学術講演会
- Place of Presentation
  岩手県工業技術センター
- Year and Date
  2010-11-27
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] Effective passivation of Ge surface by high quality GeO_2 formed by Electron Cyclotron Resonance plasma oxidation for Ge-based electronic and photonic devices2010
- Author(s)
  Y.Fukuda, Y.Otani, T.Sato, H.Toyota, T.Ono
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nano-electronics
- Place of Presentation
  Tohoku University, Sendai
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] ECRプラズマ法によるAl_2O_3/GeO_2/Ge-MOSキャパシタの電気特性に及ぼすPDA処理雰囲気の影響2009
- Author(s)
  福田幸夫,王谷洋平,佐藤哲也,有原浩之,豊田宏,小野俊郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-23
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] An electrical chracterization of metal oxy-nitrides deposited by an ECR sputtering for MIS gates.2009
- Author(s)
  H.Arihara, H.Toyota, J.Murota, M.Sakuraba, Y.Fukuda, T.Ono
- Organizer
  The 10th International Symposium on Sputtering and Plasma Processes
- Place of Presentation
  金沢国際ホテル
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] An electrical characterization of metal oxy-nitrides deposited by an ECR sputtering for MIS gates2009
- Author(s)
  H.Arihara, H.Toyota, J.Murota, M.Sakuraba, Y.Fukuda, T.Ono
- Organizer
  The 10th International Symposium on Sputtering and Plasma Processes
- Place of Presentation
  Kanazawa Intern'l Hotel, Kanazawa
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] IPE法によるECRプラズマ酸化GeO2-Ge構造のバンドアライメントの検討2009
- Author(s)
  福田幸夫、矢崎祐那、王谷洋平、佐藤哲也、豊田宏、小野俊郎
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] ECRスパッタ成膜誘電体を用いたMISキャパシタの電気特性安定化2009
- Author(s)
  小野俊郎,豊田宏,有原浩之,福田幸夫,室田淳一,櫻庭政夫
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20560287
[Presentation] ECRスパッタによる酸窒化高誘電体薄膜の形成と電気特性評価2008
- Author(s)
  有原浩之,豊田宏,小野俊郎
- Organizer
  2008年度精密工学会秋季大会学術講演会
- Place of Presentation
  東北大学
- Year and Date
  2008-09-17
- Data Source
  KAKENHI-PROJECT-20560287

1. TOSHIRO Ono (30374812)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
2. FUKUDA Yukio (50367546)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results

TOYOTA Hiroshi 豊田 宏

豊田 宏 トヨタ ヒロシ

Research Projects

Research Products

Co-Researchers

Investigation of deposition process and electrical chracteristics of oxy-nitride dielectrics by using ECR sputtering

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Low-Temperature Formation of High-Quality GeO_2 Interlayerfor High-k Gate Dielectrics/Ge by Electron Cyclotron Resonance Plasma Techniques2010

Author(s)

Journal Title

Data Source

[Journal Article] Low-Temperature Formation of High-Quality GeO_2 Interlayer for High-k Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques.2010

Author(s)

Journal Title

Data Source

[Journal Article] Characterization of tantalum oxy-nitrides deposited by ECR sputtering2009

Author(s)

Journal Title

Data Source

[Presentation] Effective passivation of Ge surface by high-quality GeO2 formed by Electron-Cyclotron-Resonance plasma oxidation for Ge-based electronic and photonic devices2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] ECRイオンアシスト加工におけるMIS界面制御の検討2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Effective passivation of Ge surface by high quality GeO_2 formed by Electron Cyclotron Resonance plasma oxidation for Ge-based electronic and photonic devices2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] ECRプラズマ法によるAl_2O_3/GeO_2/Ge-MOSキャパシタの電気特性に及ぼすPDA処理雰囲気の影響2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] An electrical chracterization of metal oxy-nitrides deposited by an ECR sputtering for MIS gates.2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] An electrical characterization of metal oxy-nitrides deposited by an ECR sputtering for MIS gates2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] IPE法によるECRプラズマ酸化GeO2-Ge構造のバンドアライメントの検討2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] ECRスパッタ成膜誘電体を用いたMISキャパシタの電気特性安定化2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] ECRスパッタによる酸窒化高誘電体薄膜の形成と電気特性評価2008

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

TOYOTA Hiroshi 豊田宏

豊田宏トヨタヒロシ