葉術軍イェシュジュン

Researcher Number	90747495
Other IDs	https://orcid.org/0000-0002-4621-8887
Affiliation (based on the past Project Information) *help	2020 – 2021: 東北大学, 国際集積エレクトロニクス研究開発センター, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator SRAM / CMOS / Variance reduction / transistor / Vertical Gate-All-Around / Surrounding gate / Si nanopillar / Vertical MOSFTE / Vertical Gate All Around / VGAA MOSFET / GAA MOSFET / Symmetric VGAA / UVGAA MOSFET

Research Projects
(1 results)
Research Products
(3 results)

Exploration of new-structure vertical gate-all-around transistor and its propertiesPrincipal Investigator
- Principal Investigator
  
  葉術軍
- Project Period (FY)
  2020 – 2021
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tohoku University

[Patent] 特許2021
- Inventor(s)
  葉術軍, 遠藤哲郎, 山部紀久夫
- Industrial Property Rights Holder
  葉術軍, 遠藤哲郎, 山部紀久夫
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-078190
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-20K14772
[Patent] PCT/JP2021/0428622021
- Inventor(s)
  葉術軍, 遠藤哲郎, 山部紀久夫
- Industrial Property Rights Holder
  葉術軍, 遠藤哲郎, 山部紀久夫
- Industrial Property Rights Type
  特許
- Filing Date
  2021
- Overseas
- Data Source
  KAKENHI-PROJECT-20K14772
[Patent] 特許2021
- Inventor(s)
  葉術軍, 遠藤哲郎, 山部紀久夫
- Industrial Property Rights Holder
  葉術軍, 遠藤哲郎, 山部紀久夫
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-005396
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-20K14772