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PARK GOONHO  朴 君昊

ORCIDConnect your ORCID iD *help
Researcher Number 90784116
Affiliation (based on the past Project Information) *help 2016: 東北大学, 電気通信研究所, 教育研究支援者
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Keywords
Principal Investigator
電界効果トランジスタ / マイクロウェーブ / トランジスタ / 絶縁膜 / 溶液法 / グラフェン
  • Research Projects

    (1 results)
  • Research Products

    (2 results)
  •  Solution-based gate dielectrics for high performance graphene transistorsPrincipal Investigator

    • Principal Investigator
      PARK GOONHO
    • Project Period (FY)
      2016
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University

All 2017 2016

All Journal Article Presentation

  • [Journal Article] Solution-based formation of high quality gate dielectrics on epitaxial graphene by microwave-assisted annealing2017

    • Author(s)
      Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06631
  • [Presentation] Solution-based formation of high quality gate dielectrics on graphene using microwave-assisted annealing2016

    • Author(s)
      Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
    • Organizer
      29th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      ANA Crowne Plaza Kyoto, Kyoto
    • Year and Date
      2016-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06631

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