• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Nakata Shuhei  中田 修平

ORCIDConnect your ORCID iD *help
Researcher Number 90807968
Other IDs
Affiliation (Current) 2026: 金沢工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help 2022 – 2024: 金沢工業大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related
Keywords
Principal Investigator
高周波 / 高速スイッチング / 高効率電力変換器 / シート抵抗 / 回路モデル / コンタクト抵抗 / High switching frequency / P-well sheet resistance / Contact resistance / Boost chopper circuit … More / 高電力変換効率 / 高周波数駆動 / スイッチング損失 / 接触抵抗 / SiC-MOSFET Less
  • Research Projects

    (1 results)
  • Research Products

    (4 results)
  •  Evaluation of the effect of contact resistance during ultra-high-speed switching of SiC-MOSFET and realization of high-efficiency power conversionPrincipal Investigator

    • Principal Investigator
      Nakata Shuhei
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Kanazawa Institute of Technology

All 2025 2024 2023

All Journal Article Presentation

  • [Journal Article] Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics2024

    • Author(s)
      Yui Nagase, Shuhei Nakata, Takaaki Tominaga
    • Journal Title

      Solid State Phenomena

      Volume: 360 Pages: 23-27

    • DOI

      10.4028/p-n20uud

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22K04224
  • [Presentation] SiC-MOSFETを用いたチョッパ回路の高周波駆動の研究2025

    • Author(s)
      妻 啓太,堀 一耀,中田 修平
    • Organizer
      令和7年電気学会全国大会
    • Data Source
      KAKENHI-PROJECT-22K04224
  • [Presentation] Effect evaluation and modeling of p-type contact resistance of SiC MOSFET on switching characteristics2023

    • Author(s)
      Yui.Nagase and S.Nakata
    • Organizer
      ICSCRM2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04224
  • [Presentation] SiC-MOSFETのp型コンタクト抵抗が スイッチング特性に及ぼす影響評価2023

    • Author(s)
      永瀬 唯,中田 修平, 富永 貴亮
    • Organizer
      令和5年電気学会全国大会
    • Data Source
      KAKENHI-PROJECT-22K04224

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi