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WAKAHARA Akihiro  若原 昭浩

ORCIDConnect your ORCID iD *help
… Alternative Names

若原 明浩  ワカハラ アキヒロ

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Researcher Number 00230912
Other IDs
Affiliation (based on the past Project Information) *help 2013 – 2017: 豊橋技術科学大学, 工学(系)研究科(研究院), 教授
2016: 豊橋技術科学大学, 電気・電子情報工学系, 教授
2012: 豊橋技術科学大学, 大学院・工学研究科, 教授
2012: 豊橋技術科学大学, 工学部, 教授
2005 – 2009: Toyohashi University of Technology, Dept. of Electrical and Electronic Engineering, Professor, 工学部, 教授 … More
2000 – 2004: 豊橋技術科学大学, 工学部, 助教授
1999 – 2000: 豊橋技術科学大学, 技術開発センター, 助教授
1998 – 1999: 豊橋科学技術大学, 工学部, 助教授
1997: Toyohashi Univ.of Technology, associ.Prof., 工学部, 助教授
1997: Kyoto Univ., Electronic Sci.& Engrg., Assist.Prof. ('96) Toyohashi Tech.Univ., E, 工学部・電気電子工学科, 助教授
1995 – 1997: Kyoto Univ., Graduate School of Eng..Res.Ass., 工学研究科, 助手
1990 – 1994: 京都大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Electron device/Electronic equipment / Crystal engineering / Electronic materials/Electric materials
Except Principal Investigator
Electronic materials/Electric materials / Applied materials science/Crystal engineering / 電子材料工学 / Education / Science education / Engineering … More / Science and Engineering / 電子デバイス・機器工学 / Electron device/Electronic equipment / Electronic materials/Electric materials / 電力工学・電気機器工学 Less
Keywords
Principal Investigator
有機金属気相成長法 / 組成不均一 / 発光特性 / 有機金属気相成長 / Optoelectronics / III-Nitrides / Rare-earth element / 発光過程 / ヘテロエピタキシャル成長 / 光電子集積 … More / III族窒化物 / ウエハ融着 / 光電子集積回路 / 窒化物半導体 / 希土類 / Compositional Inhomogeneity / Organometallic Vapor Phase Epitaxy / Group-III Nitride Alloy / 有機金属気相エピタキシー / リモートプラズマ / 組成不均一構造 / 窒化物混晶半導体 / 組成揺らぎ / 非輻射再結合中心 / 組成不均一性制御 / 分子線エピタキシー / Si基板 / ヘテロエピタキシー / ドーピング制御 / 無転位 / III-V-N / Si上ヘテロエピタキシャル成長 / 価電子制御 / 欠陥制御 / Si上ヘテロエピタキシー / 表面超構造 / III-V-N混晶 / 結晶成長機構 / 窒素デルタドープ超格子 / 結晶成長 / III-V-N化合物半導体 / シリコンフォトニクス / 温度依存性 / バンドギャップ / 励起子発光 / ZnGeN2 / 多元窒化物 / フォトルミネセンス / Raman / 光学定数 / エピタキシャル成長 / II-IV-N_2窒化物半導体 / 歪場解析 / 成長様式 / 自己形成量子ドット / ホトルミネセンス / 短周期超格子 / 等電子不純物 / 有機アミン / 表面光吸収測定 / 有機V族原料 … More
Except Principal Investigator
InAs / GaAs / GaN / InGaN / 光量子物性 / 量子ドット / 遷移膜厚 / GaP / 不規則超格子 / luminescence / 発光 / 窒化物半導体 / InGaPN / Al_2O_3 / GaInP / 不規則量子構造 / InP / 自然形成量子ドット / transition thickness / heteroepitaxy / 自己形成 / localized level / III-V semiconductors / disoredering / AlAs / 局在準位 / III-V族半導体 / 超格子 / 発光デバイス / GaPN / 格子整合 / III-V-N混晶 / カーボンナノチューブ / AlP / 窒化アルミニウム / ZnSe / 教育学 / ICT / ICT / 教員研修 / FD / 教育スキル / 青色LED / 高専教育 / 熱抵抗 / 発熱 / 青色LED / 半導体 / 学生実験 / 工学教育 / optoelectronic integrated system / light emitting diode / MOS FET / device process / electric conductivity control / point defect / III-V-N alloy / 超並列集積回路 / GaP LED / Si-GaPN / Si-III-V-N融合システム / 伝導度制御 / 光学定数 / 光-電子融合シスデム / GaPNダブルヘテロ構造LED / 格子間原子 / 発光効率 / 光-電子融合システム / 発光ダイオード / MOSトランジスタ / デバイスプロセス / 電気伝導度制御 / 点欠陥 / III-V-N / Pyroelastric Sensor / FeRAM / Ferroelectlic film / alumina / epitaxial / 基板 / 強誘電体メモリ / ヘテロ成長用基盤 / メモリー素子 / 単結晶絶縁膜 / エピタキシャル成長 / Al2O3 / 焦電型センサ / 強誘電体メモリー / 強誘電体薄膜 / ヘテロエピタキシー / アルミナ / エピタキシャル / disordered effects / spontaneously ordered semiconductor / naturally formed quantum dot / quantum dot / quantum wire / Ga_<0.5>In_<0.5>P / InGaN単一量子井戸 / Ga_<0.52>In_<0.48>P / 自然超格子 / 不規則量子細線 / 量子効果半導体 / 不規則効果 / 自然規則配列 / 量子細線 / transition thickness from 2D grwoth to 3D growth / stacked layr of ordered quantum dots / quantum optoelectronic properties / Stranski-Krastanov mode / GaAs quantum dots / quantum dots / 相分離 / 2次元3次元遷移厚 / 規則配列積層量子ドット / Stranski-Krastanov / GaAs量子ドット / mass-transport / wafer-fusion / circular gratings / optical flip-flops / Integrated devices / 反応性イオンエッチング / 電子ビーム露光 / 面発光デバイス / 回折格子結合型面発光レーザ / 半導体回折格子 / 空気 / マストランスポート / マイクロマシ-ニング / 回折格子結合型面電光レーザ / 光電子集積デバイス / 面発光 / 質量輸送 / ウエハ融着 / 円形回折格子 / 光フリップフロップ / 集積デバイス / Disordered superlattice / Properties of quantum optoelectronics / Self-formed quantum dot / 量子構造 / 光励起発光 / 走査型トンネル顕微鏡 / キャリア局在 / 自己形成量ドット / InGaN相分離 / プラズマ励起InGaN成長 / プラズマ励起GaN成長 / GaN成長 / GaAs量子構造 / quantum-dot / self-assemble / Stranski-krastanor mode / Stranski-Krastanov様式 / ヘテロエピキタシ- / step-flow mode / quantum effects / disorder superlattices / ステップフロー姿態 / ステップフロー姿勢 / 量子効果 / silicon・germanium / super lattice / 有機V族 / 有機金属気相成長法 / AlGaAs / AlGaP / 不規則結晶半導体 / 電流注入発光特性 / 光励起発光特性 / Si / SiGe / 極在準位 / シリコン・ゲルマニウム / 不規則 / superlattice / 光吸収 / 時分解ホトルミネセンス / 量子物性 / 光物性 / AlGaAs超格子 / GaAs不規則超格子 / 間接遷移発光 / IIIーV族半導体 / ホトルミネセンス / 不規則原子配列 / 2次元電子ガス / 2次元電子ガス / AlGaN/GaN / ヘテロ構造 / イオン注入 / 高電子移動度トランジスタ / 希土類元素 / ボンド結合長 / InNP / エピタキシャルリフトオフ / GaInNA s / GaInNAs / X線吸収微細構 / III-N-V半導体 / 電気・電子材料 / 原子緩和 / X線光電子分光 / GaInNAs / 原子配列 / X線吸収微細構造 / 熱処理 / III-N-V化合物半導体 / III-N-V 半導体 / 反応性真空アーク蒸着 / ワイドバンドギャップ半導体 / カーボンナノホーン / カーボンナノコイル / 色素増感太陽電池 / 3次元ナノコーティング / ナノカーボン / 光電子集積回路 / 深い順位 / 無転位 / ヘテロエピキタシー / シリコン / 電子顕微鏡 / 微細加工技術 / MOSデバイス / ポストシリコン材料 / 量子効果デバイス / 電界効果デバイス / 電流-電圧特性 / 原子間力顕微鏡 / 電極構造 / 量子デバイス / 電子デバイス / GaP超格子 / アルキルV族OMVPE / MOCVD / 光援助MBE法 / セレン化亜鉛 / CdSe超格子 / 原子層エピタキシー / 界面準位 / アルキルひ素・燐 / ヘテロエピタキシャル成長 / OMVPE法 / ALE成長 / 光照射MBE成長 Less
  • Research Projects

    (28 results)
  • Research Products

    (112 results)
  • Co-Researchers

    (59 People)
  •  Introduction of experiments using blue LED fabrication to the education of National institution of technology

    • Principal Investigator
      WADA NAOKI
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Science education
    • Research Institution
      Niihama National College of Technology
  •  The construction of an education skill archive enabling practical education and joint ownership by the ICT

    • Principal Investigator
      TSUBOI TAIJI
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Education
    • Research Institution
      Anan National College of Technology
  •  Development of defect reduction method for a lattice-matched III-V-N / Si laser monolithically integrated on Si-chipPrincipal Investigator

    • Principal Investigator
      WAKAHARA Akihiro
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Toyohashi University of Technology
  •  Rare-earth doped gallium nitride semiconductor light emitting device and their application

    • Principal Investigator
      OKADA Hiroshi
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Toyohashi University of Technology
  •  Study on atomic relaxation of III-N-V semiconductor

    • Principal Investigator
      KONDOW Masahiko
    • Project Period (FY)
      2008 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  窒素クラスタ位置制御によるSiと格子整合する直接遷移III-V-N規則混晶の創成Principal Investigator

    • Principal Investigator
      若原 昭浩
    • Project Period (FY)
      2008 – 2009
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Toyohashi University of Technology
  •  Development of Optoelectronic Integrated Devices based on BIN-RE alloy semiconductor and SiPrincipal Investigator

    • Principal Investigator
      WAKAHARA Akihiro
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Toyohashi University of Technology
  •  ナノカーボンの表面ナノコーティングと太陽電池への適用に対する基礎検討

    • Principal Investigator
      滝川 浩史
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      電力工学・電気機器工学
    • Research Institution
      Toyohashi University of Technology
  •  Device Process for Integrated Systems Composed of Dislocation-Free III-V-N Alloys and Silicon

    • Principal Investigator
      YONEZU Hiroo
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Engineering
    • Research Institution
      Toyohashi University of Technology
  •  化合物半導体-シリコン無転位一体化層の高品質化と光デバイスへの応用

    • Principal Investigator
      YONEZU Hiroo
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Toyohashi University of Technology
  •  II-VI-N_2多元窒化物単結晶の成長と基礎物性解明Principal Investigator

    • Principal Investigator
      若原 昭浩
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Toyohashi University of Technology
  •  Substrate using epitaxial Al_2O_3 film for hetero-epitaxial growth and device applications

    • Principal Investigator
      ISHIDA Makoto
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Toyohashi University of Technology
  •  カーボンナノチューブの電界効果およびトランジスタへの応用

    • Principal Investigator
      YOSHIDA Akira
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Toyohashi University of Technology
  •  Investigation of Compositional Inhomogeneity in InAlGaN and Realization of Lattice-Matched Quantum Structure by Group-III NitridesPrincipal Investigator

    • Principal Investigator
      WAKAHARA Akihiro
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Toyohashi University of Technology
  •  Researching for New Quantum Optoelectronic Properties by Disorderly Stacked-Layer of Disordered Quantum Dots

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka Electro-Communication University
  •  自己形成量子ドット構造の形成機構の解明と制御Principal Investigator

    • Principal Investigator
      若原 昭浩
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University
  •  New Quantum Optoelectronic Properties of Semiconductors with Disordered Structures

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka Electro-Communication University
  •  AlGaP系短周期超格子の発光機構解明と発光効率向上に関する研究Principal Investigator

    • Principal Investigator
      若原 昭浩
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University
  •  Heteroepitaxial Mechanism of Ouantum-Effect Semiconductors

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Institution
      KYOTO UNIVERSITY
  •  Light-Emitting Devices with Self-Formation Disordered Quantum Dots

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Osaka Electro-Communication University
      Kyoto University
  •  High Performance Optoelectronic Integrated Devices by Micromachining Technique

    • Principal Investigator
      NODA Susumu
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      KYOTO UNIVERSITY
  •  AlP/GaP超格子中に導入した窒素等電子準位の解明と発光効率向上に関する研究Principal Investigator

    • Principal Investigator
      若原 昭浩
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University
  •  Realization of disordered quantum wire semicondctors

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYOTO UNIVERSITY
  •  アルキルV族原料を用いた有機金属気相成長の表面反応過程Principal Investigator

    • Principal Investigator
      若原 昭浩
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto University
  •  結晶成長の原子レベル制御

    • Principal Investigator
      松本 俊
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      University of Yamanashi
  •  DISORDERED SUPERLATTICES

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      KYOTO UNIVERSITY
  •  結晶成長の原子レベル制御

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  MATERIALIZATION OF ANISOTROPIC CRYSTALLINE SEMICONDUCTORS

    • Principal Investigator
      SASAKI Akio
    • Project Period (FY)
      1989 – 1991
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      電子材料工学
    • Research Institution
      KYOTO UNIVERSITY

All 2018 2017 2016 2015 2013 2012 2011 2010 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

  • [Journal Article] Practice of the Semiconductor Education Using Si Solar Cell Fabrication and Energy Conversion Efficiency Simulation2017

    • Author(s)
      塩貝一樹、和田直樹、若原昭浩
    • Journal Title

      Journal of JSEE

      Volume: 65 Issue: 2 Pages: 2_56-2_61

    • DOI

      10.4307/jsee.65.2_56

    • NAID

      130006832927

    • ISSN
      1341-2167, 1881-0764
    • Language
      Japanese
    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Journal Article] Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation2016

    • Author(s)
      N. Urakami, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara,
    • Journal Title

      Journal of Crystal Growth

      Volume: 435 Pages: 19-23

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Journal Article] Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy2012

    • Author(s)
      Yasufumi Takagi, Takanobu Suwa, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
    • Journal Title

      Applied Physics Letters

      Volume: 99 Issue: 17 Pages: 171905-171905

    • DOI

      10.1063/1.3656018

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Journal Article] Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device2012

    • Author(s)
      S.B.Shin, K.Iijima, J.Chiba, H.Okada, S.Iwayama, and A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.50

    • NAID

      210000138708

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Journal Article] ntelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor2012

    • Author(s)
      C.Y.Lee, F.Matsuno, Y.Hashimoto, H.Okada, K.Sawada, and A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51 Pages: 44101-44101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Journal Article] Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy2011

    • Author(s)
      F. Ishikawa, S. Fuyuno, K. Higashi, M. Kondow, M. Machida, H. Oji, J.-Y. Son, A. Trampert, K. Umeno, Y. Furukawa, and A. Wakahara
    • Journal Title

      Appl. Phys. Lett.

      Volume: 98 Pages: 121915-121915

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Effect of Mg codoping on Eu3+luminescence in GaN grown by ammonia molecular beam epitaxy2011

    • Author(s)
      Yasufumi Takagi, Takanobu Suwa, Hiroto Sekiguchi, Hiroshi Okada, and Akihiro Wakahara
    • Journal Title

      Applied Physics Letters

      Volume: Vol.99 Pages: 171905-171905

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Journal Article] Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy2011

    • Author(s)
      F.Ishikawa, S.Fuyuno, K.Higashi, M.Kondow, M.Machida, H.Oji, J.-Y.Son, A.Trampert, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Appl.Phys.Lett. 98

      Pages: 121915-121915

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy2011

    • Author(s)
      F.Ishikawa, S.Fuyuno, K.Higashi, M.Kondow, M.Machida, H.Oji, J.-Y.Son, A.Trampert, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Applied Physics Letters

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy2010

    • Author(s)
      K. Umeno, Y. Furukawa, N. Urakami, S. Mitsuyoshi, H. Yonezu, A. Wakahara, F. Ishikawa, and M. Kondow
    • Journal Title

      J.Vac. Sci.& Tech B

      Volume: 28

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Infrared Absorption Spectrum of InNP2010

    • Author(s)
      M.Kondow, F.Ishikawa, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Appl.Phys.Exp. 3

      Pages: 11001-11001

    • NAID

      10027012827

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Infrared Absorption Spectrum of InNP2010

    • Author(s)
      M. Kondow, F. Ishikawa, K. Umeno, Y. Furukawa, and A. Wakahara
    • Journal Title

      Appl. Phys. Exp.

      Volume: 3 Pages: 11001-11001

    • NAID

      10027012827

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Infrared Absorption Spectrum of InNP2010

    • Author(s)
      M.Kondow, F.Ishikawa, K.Umeno, Y.Furukawa, A.Wakahara
    • Journal Title

      Applied Physics Express 3

    • NAID

      10027012827

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Eu 添加 AlGaN/GaN HEMT 構造を用いた発光素子の検討2010

    • Author(s)
      近藤正樹、秦貴幸、岡田浩、若原昭浩・古川雄三
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 110巻 Pages: 11-16

    • NAID

      110007999961

    • Data Source
      KAKENHI-PROJECT-22560328
  • [Journal Article] Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy2010

    • Author(s)
      K.Umeno, Y.Furukawa, N.Urakami, S.Mitsuyoshi, H.Yonezu, A.Wakahara, F.Ishikawa, M.Kondow
    • Journal Title

      Journal of Vacuum Science & Technology B

      Volume: 28

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy2010

    • Author(s)
      K.Umeno, Y.Furukawa, N.Urakami, S.Mitsuyoshi, H.Yonezu, A.Wakahara, F.Ishikawa, M.Kondow
    • Journal Title

      J.Vac.Sci.& Tech B 28

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Journal Article] Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements2008

    • Author(s)
      A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, H. Itoh
    • Journal Title

      phys. stat. solodi(a) Vol.205,(1)

      Pages: 56-59

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] 380 keV proton irradiation effects on photoluminescence f Eu-doped GaN2008

    • Author(s)
      H.Okada, Y.Nakanishi, A.Wakahara, A.Yoshida, T.Ohshima
    • Journal Title

      Nuclear Instruments and Methods in Physics Researth B 266

      Pages: 853-856

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN2008

    • Author(s)
      H. Okada, Y. Nakanishi, A. Wakahara, A. Yoshida, T. Ohshima
    • Journal Title

      Nuclear Instruments and Methods in Physics Research B Vol.266

      Pages: 853-856

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] 380 keV proton irradiation effects on photoluminescence f Eu-doped GaN2008

    • Author(s)
      H. Okada, Y. Nakanishi, A. Wakahara, A. Yoshida, T. Ohshima
    • Journal Title

      Nuclear Instruments and Methods in Physics Research B 266

      Pages: 853-856

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Optical properties of Er-doped GaN2007

    • Author(s)
      H.Castaneda Lopez, S.-I.Kim, Y.-H.Kim, Y.T.Kim, A.Wakahara, C.-S.Son, and I.-H.Choi
    • Journal Title

      Revista Mexicana de Fisica S53

      Pages: 9-12

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements2007

    • Author(s)
      A.Wakahara, K.Takemoto, F.Oikawa, H.Okada, T.Ohshima, and H.ltoh
    • Journal Title

      Physica Status Solodi(a) 205

      Pages: 56-59

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Optical properties of Er-doped GaN2007

    • Author(s)
      H. Castaneda Lopez, S.-I. Kim, Y.-H. Kim, Y. T. Kim, A. Wakahara, C.-S. Son, and L.-H. Choi
    • Journal Title

      Revista Mexicana de Fisica S53

      Pages: 9-12

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements2007

    • Author(s)
      A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, and H. Itoh
    • Journal Title

      Physica Status Solodi(a) 205

      Pages: 56-59

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Electrical Properties of n-type GaPN Grown by Molecular-Beam Epitaxy2006

    • Author(s)
      Y.Furukawa, H.Yonezu, A.Wakahara Y.Yoshizumi, Y.Morita, A.Sato
    • Journal Title

      Applied Physics Letters (to be published)

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] IMPACT OF A1GaN ON LUMINESCENCE CAPABILITY OF RARE- EARTH IONS IN AlGaN2006

    • Author(s)
      A.Wakahara
    • Journal Title

      Optical Materials 28・6-7

      Pages: 731-737

    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Effect of Nitrogen Ion Bombardment on Defect Formation and Luminescence Efficiency of GaNP Epilayers Grown by Molecular-Beam Epitaxy2006

    • Author(s)
      D.Dagnelund, I.A.Buyanova, T.Mchedlidze, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
    • Journal Title

      Applied Physics Letters Vol. 88,No. 10

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Effect of Nitrogen Ion Bombardment on Defect Formation and Luminescence Efficiency of GaNP Epilayers Grown by Molecular-Beam Epitaxy2006

    • Author(s)
      U.Dagnelund, I.A.Buyanova, T.Mchedlidze, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
    • Journal Title

      Applied Physics Letters Vol.88,No.10

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Fluorescence EXAFS study on local structures around Eu atoms implanted in A1xGal-xN2006

    • Author(s)
      H.Ofuchi, T.Nishiwaki, K.Takaba, K.Ogawa, M.Tabuchi, Y.Takeda, A.Wakahara, A.Yoshida, T.Ohshima, H.Ito
    • Journal Title

      Physica B 376-377

      Pages: 496-498

    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Fluorescence EXAFS study on local structures around Eu atoms implanted in AI_xGai_<-x>N2006

    • Author(s)
      H. Ofuchi, T. Nishiwaki, K. Takaba, K. Ogawa, M. Tabuchi, Y. Takeda, A. Wakahara, A. Yoshida, T. Ohshima, H. Ito
    • Journal Title

      Physica B Vol.376-377

      Pages: 496-498

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Impact of AlGaN on Luminescence Capability of Rare-earth Ions in AlGaN2006

    • Author(s)
      A.Wakahara
    • Journal Title

      Optical Materials Volume 28, Issues 6-7

      Pages: 731-737

    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Electrical Properties of n-type GaPN Grown by Molecular-Beam Epitaxy2006

    • Author(s)
      Y.Furukawa, H.Yonezu, A.Wakahara, Y.Yoshizumi, Y.Morita, A.Sato
    • Journal Title

      Applied Physics Letters Vol. 88, No. 14

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Effect of Nitrogen Ion Bombardment on Defect Formation and Luminescence Efficiency of GaNP Epilayers Grown by Molecular-Beam Epitaxy2006

    • Author(s)
      D.Dagnelund, I.A.Buyanova, T.Mchedlidze, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
    • Journal Title

      Applied Physics Letters Vol. 88, No. 10

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Impact of AIGaN on Luminescence Capability of Rare-Earth Ions in A1GaN2006

    • Author(s)
      A. Wakahara
    • Journal Title

      Optical Materials Vol.28

      Pages: 731-737

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Electrical Properties of n-type GaPN Grown by Molecular-Beam Epitaxy2006

    • Author(s)
      Y.Furukawa, H.Yonezu, A.Wakahara, Y.Yoshizumi, Y.Morita, A.Sato
    • Journal Title

      Applied Physics Letters Vol. 88,No. 14

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Dislocation- Free In_xGa_<1-x>P_<1-y>N_y/GaP_<1-z>N_z Double -Heterostructure Light Emitting Diode on Si Substrate2005

    • Author(s)
      S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics Vol.44,No.4A

      Pages: 1752-1755

    • NAID

      10015470221

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Enhancement of Tb-related cathodoluminescence in Al_xGa_<1-x>N (0【less than or equal】x【less than or equal】1)2005

    • Author(s)
      A.Wakahara, Y.Nakanishi, T.Fujiwara, H.Okada, A.Yoshida, T.Ohshima, T.Kamiya
    • Journal Title

      Phys.Stat.Solidi (a) Vol.202, No.5

      Pages: 863-867

    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Dislocation-Free In_xGa_<1-x>P_<1-y>N_y/GaP_<1-z>N_z Double-Heterostructure Light Emitting Diode on Si Substrate2005

    • Author(s)
      S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44,No. 4A

      Pages: 1752-1755

    • NAID

      10015470221

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Elemental Devices, Circuits and Processes for a Monolithic Si/III-V-N Alloy OEIC2005

    • Author(s)
      H.Yonezu, Y.Furukawa, H.Abe, Y.Yoshikawa, S.-Y.Moon, A.Utsumi, Y.Yoshizumi, A.Wakahara, M.Ohtani
    • Journal Title

      Optical Materials Vol. 27

      Pages: 799-803

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Enhancement of Th-related cathodeluminescence in AI_xGai_<-x>,N (0≦x≦1)2005

    • Author(s)
      A. Wakahara, Y. Nakanishi, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, T. Kamiya
    • Journal Title

      physica status solidi(a) Vol.202,(5)

      Pages: 863-867

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Elemental Devices, Circuits and Processes for a Monolithic Si/III-V-N Alloy OEIC2005

    • Author(s)
      H.Yonezu, Y.Furukawa, H.Abe, Y.Yoshikawa, S.-Y.Moon, A.Utsumi, Y.Yoshizumi, A.Wakahara, M.Ohtani
    • Journal Title

      Optical Materials Vol.27

      Pages: 799-803

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Photoluminescence studies of Eu-implanted GaN epilayers2005

    • Author(s)
      V. Katchkanov, K. P. O'Donnell, S. Dalmasso, R. W. Martin, A. Braud, Y. Nakanishi, A. Wakahara, A. Yoshida
    • Journal Title

      physica status solidi(b) Vol.242,(7)

      Pages: 1491-1496

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Effects of Rapid Thermal Annealing on Optical Properties of GaN_xP_<1-x> Alloys Grown by Solid Source Molecular Beam Epitaxy2005

    • Author(s)
      M.Izadifard, I.A.Buyanova, J.P.Bergman, W.M.Chen, A.Utsumi, Y.Furukawa, A.Wakahara, H.Yonezu
    • Journal Title

      Semiconductor Science and Technology Vol.20

      Pages: 353-356

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Improvement of Crystalline Quality of GaPN Layers Grown by RF-MBE with Ion Collector2005

    • Author(s)
      A.Utsumi, Y.Furukawa, H.Yonezu, Y.Yoshizumi, Y.Morita, A.Wakahara
    • Journal Title

      Phys.Stat.Sol.(a) Vol.202, No.5

      Pages: 758-762

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Properties of Ga-Interstitial Defects in Al_xGa_<1-x>N_yP_<1-y>2005

    • Author(s)
      N.Q.Thinh, I.P.Vorona, I.A.Buyanova, W.M.Chen, Sukit Limpijumnong, S.B.Zhang, Y.G.Hong, H.P.Xin, C.W.Tu, A.Utsumi, Y.Furukawa, S.Moon, A.Wakahara, H.Yonezu
    • Journal Title

      Physical Review B Vol.71,No.12

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Optical Properties of Lattice Matched InxGa1-xP1-yNy Heteroepitaxial Layers on GaP2005

    • Author(s)
      T.Imanishi, A.Wakahara, S.-M.Kim, H.Yonezu, Y.Furukawa
    • Journal Title

      Phys.Stat.Sol.(a) Vol.202, No.5

      Pages: 854-858

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Photoluminescence properties of Eu-implanted A1_xGai_<-x>N(0≦x≦1)2005

    • Author(s)
      T. Fujiwara, A. Wakahara, Y. Nakanishi, H. Okada, A. Yoshida, T. Ohshima T. Kamiya
    • Journal Title

      physica status solidi(c) Vol.2,(7)

      Pages: 2805-2808

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Energy-back-transfer process in rare-earth doped AlGaN2005

    • Author(s)
      A.Wakahara, T.Fujiwara, H.Okada, A.Yoshida, T.Ohshima, H.Itho
    • Journal Title

      Mater.Res.Soc.Symp.Proc. Vol.866

    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy2005

    • Author(s)
      S.M.Kim, Y.Furukawa, H.Yonezu, K.Umeno, A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44,No. 12

      Pages: 8309-8313

    • NAID

      10016958323

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Photoluminescence studies of Eu-implanted GaN epilayers2005

    • Author(s)
      V.Katchkanov, K.P.O'Donnell, S.Dalmasso, R.W.Martin, A.Brand, Y.Nakanishi, A.Wakahara, A.Yoshida
    • Journal Title

      Physica status solidi (b) Vol.242, No.7

      Pages: 1491-1496

    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] Dislocation-Free InxGa1-xP1-yNy/GaP1-zNz Double-Heterostructure Light Emitting Diode on Si Substrate2005

    • Author(s)
      S.Y.Moon, H.Yonezu, Y.Furukawa, S.M.Kim, Y.Morita, A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 4A

      Pages: 1752-1755

    • NAID

      130004533576

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy2005

    • Author(s)
      S.M.Kim, Y.Furukawa, H.Yonezu, K.Umeno, A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics Vol.44,No.12

      Pages: 8309-8313

    • NAID

      10016958323

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Effect of Indium on Photoluminescence Properties of InGaPN Layers Grown by Solid Source Molecular Beam Epitaxy2005

    • Author(s)
      S.M.Kim, Y.Furukawa, H.Yonezu, K.Umeno, A.Wakahara
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 12

      Pages: 8309-8313

    • NAID

      10016958323

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15002007
  • [Journal Article] Energy-back-transfer process in rare-earth doped AIGaN2005

    • Author(s)
      A. Wakahara, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, H. Itho
    • Journal Title

      Mater. Res. Soc. Symp. Proc Vol.866

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Journal Article] GaPN-GaP Double Heterostructure Light Emitting Diode Grown on GaP Substrate by Solid-Source Molecular Beam Epitaxy2004

    • Author(s)
      S.Y.Moon, A.Utsumi, H.Yonezu, Y.Furukawa, T.Ikeda, A.Wakahara
    • Journal Title

      Phys.Stat.Sol.(a) Vol.201, No.12

      Pages: 2695-2698

    • Data Source
      KAKENHI-PROJECT-15002007
  • [Presentation] 青色LED製作を利用した半導体教育の実践-教育効果-2018

    • Author(s)
      塩貝一樹、和田直樹、曽我崇伍、若原昭浩、関口寛人、酒井 士郎、重松優太、近藤和真
    • Organizer
      第65回応用物理学会春季学術講演会、18a-P1-27
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] 青色LED製作を利用した半導体教育の実践-実験方法-2018

    • Author(s)
      曽我崇伍、塩貝一樹、和田直樹、若原昭浩、関口寛人、酒井 士郎、重松優太、近藤和真
    • Organizer
      第65回応用物理学会春季学術講演会、18a-P1-26
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] 青色LEDを使った学生実験テーマの開発 -製作プロセス-2017

    • Author(s)
      塩貝一樹、和田直樹、若原昭浩、関口寛人、酒井士郎
    • Organizer
      第64回応用物理学会春季学術講演会、16a-P1-19
    • Place of Presentation
      パシフィコ横浜(神奈川県)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] 熱抵抗の異なる青色LEDを使った学生実験2017

    • Author(s)
      曽我崇伍、重松優太、近藤和真、塩貝一樹、和田直樹、若原昭浩、酒井士郎
    • Organizer
      平成29年度電気関係学会四国支部連合大会、11-4
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] 青色LEDを使った学生実験テーマの開発 -熱抵抗-2017

    • Author(s)
      和田直樹、塩貝一樹、若原昭浩、関口寛人、酒井士郎
    • Organizer
      第64回応用物理学会春季学術講演会、16a-P1-18
    • Place of Presentation
      パシフィコ横浜(神奈川県)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] 学生実験用の青色LED製作工程の開発2016

    • Author(s)
      塩貝一樹、和田直樹、若原昭浩、山根啓輔、酒井士郎
    • Organizer
      第77回応用物理学会秋季学術講演会、14a-P1-12
    • Place of Presentation
      朱鷺メッセ(新潟県)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] DESIGN AND GROWTH OF DISLOCATION-FREE III-V-N/Si FOR Si-BASED MULTIJUNCTION SOLAR CELLS2016

    • Author(s)
      [3]Akihiro Wakahara, Noriyuki Urakami, Shunsuke Mugikura, Keisuke Yamane, Hiroto Sekiguchi
    • Organizer
      The 3rd International Conference of Grobal Network for Innovative Technology (IGNITE2016)
    • Place of Presentation
      Penang, Malaysia
    • Year and Date
      2016-01-17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Si基板上格子整合系GaAsPN混晶の導電性制御2016

    • Author(s)
      佐藤健人, 山根啓輔, 西尾卓也, 麦倉俊, 関口寛人, 岡田浩, 若原昭浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] 学生実験用太陽電池変換効率シミュレーションと分光感度測定2016

    • Author(s)
      後藤祐真、村上成汐、曽我崇伍、脇昇子、塩貝一樹、和田直樹、若原昭浩
    • Organizer
      平成28年度電気関係学会四国支部連合大会、 11-2
    • Place of Presentation
      徳島大学常三島キャンパス(徳島県)
    • Year and Date
      2016-09-17
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] Si太陽電池製作を利用した半導体教育の実践2016

    • Author(s)
      和田 直樹、塩貝 一樹、若原 昭浩
    • Organizer
      第63回応用物理学会春季学術講演会21a-P2-12
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] 太陽電池製作と変換効率シミュレーションを用いた学生実験テーマの作成2016

    • Author(s)
      和田直樹、塩貝一樹、後藤祐真、脇昇子、若原昭浩、山根啓輔
    • Organizer
      豊橋技術科学大学平成28年度高専連携教育研究プロジェクト進捗状況報告会
    • Place of Presentation
      豊橋技術科学大学(愛知県)
    • Year and Date
      2016-12-27
    • Data Source
      KAKENHI-PROJECT-15K01004
  • [Presentation] Si基板上無転位III-V-N結晶成長と光・電子集積デバイス2015

    • Author(s)
      若原昭浩, 山根啓輔
    • Organizer
      電子情報通信学会シリコンフォトニクス研究会
    • Place of Presentation
      政記念 しいのき迎賓館, 石川
    • Year and Date
      2015-12-10
    • Invited
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Effects of growth temperature on crystalline quality of high nitrogen composition GaAsPN2015

    • Author(s)
      [5]S.Mugikura, N. Urakami, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara
    • Organizer
      34th Electronic Materials Symposium (EMS-34)
    • Place of Presentation
      Shiga
    • Year and Date
      2015-07-12
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Effects of growth temperature on crystalline quality of high nitrogen composition GaAsPN2015

    • Author(s)
      [1]Kento Sato, Keisuke Yamane, Shun Mugikura, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
    • Organizer
      The Irago Conference 2015
    • Place of Presentation
      Irago, Japan
    • Year and Date
      2015-10-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] 表面窒化を用いたGaAsN混晶のN組成制御2015

    • Author(s)
      浦上法之, 山根啓輔, 関口寛人, 岡田浩, 若原 昭浩
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2015-05-28
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] III-N-based optoelectronic devices and their integration2013

    • Author(s)
      A Wakahara, N.Urakami, H.Itho, H. Okada, and H. Sekiguchi
    • Organizer
      10th Topical Workshop on Heterostructure Microelectronics(TWHM2013)
    • Place of Presentation
      Hakodate
    • Invited
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Growth of GaAsN quantum well structure by surface nitridation2013

    • Author(s)
      N. Urakami, H. Ito, H. Sekiguchi, H. Okada, A. Wakahara
    • Organizer
      40th Int. Symp. On Compound Semiconductors (ISCS2013)
    • Place of Presentation
      Kobe
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Mg 共添加による GaN:Eu の発光特性向上のメカニズム2012

    • Author(s)
      関口寛人,大谷龍輝,高木康文, 岡田 浩,若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] NH3-MBE法によるGaN:Eu LEDの発光特性2012

    • Author(s)
      大谷龍輝, 松村亮太, 関口寛人, 高木康文, 岡田浩, 若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] 希土類添加III族窒化物半導体を用いた三端子型発光デバイスの作製(4)2012

    • Author(s)
      近藤正樹, 岡田浩, 関口寛人, 若原昭浩, 佐藤真一郎, 大島武
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Mg共添加によるGaN:Euの発光特性向上のメカニズム2012

    • Author(s)
      関口寛人, 大谷龍輝, 高木康文, 岡田浩, 若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] NH3-MBE 法による GaN:Eu LED の発光特性2012

    • Author(s)
      大谷龍輝, 松村亮太,関口寛人,高木康文,岡田 浩,若原昭浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] 希土類添加III 族窒化物半導体を用いた三端子型発光デバイスの作製(4)2012

    • Author(s)
      近藤正樹, 岡田 浩,関口寛人,若原昭浩,佐藤真一郎,大島 武
    • Organizer
      希土類添加III 族窒化物半導体を用いた三端子型発光デバイスの作製(4)
    • Place of Presentation
      東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Development of Lattice- Matched GaPN/ AlGaPN DBR on Si2012

    • Author(s)
      H. Okada, K. Kumagai, T. Kawai, H. Sekiguchi, and A. Wakahara
    • Organizer
      IEEE Photonics Conference 2012
    • Place of Presentation
      サンフランシスコ(米国)
    • Year and Date
      2012-09-27
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Effect of Nitrogen Source on Doping Properties of GaN:Eu Grown by MBE2011

    • Author(s)
      T.Suwa, Y.Takagi, H.Sekiguchi, H.Okada, A.Wakahara
    • Organizer
      rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      名古屋
    • Year and Date
      2011-03-06
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Eu selective doped light emitting transistor based-on AlGaN/GaN heterostructure2011

    • Author(s)
      M. Kondo, T. Hata, H. Okada, A. Wakahara, S. Sato, and T. Oshima
    • Organizer
      Asia-Pacific Interdisciplinary Research Conference 2011
    • Place of Presentation
      豊橋
    • Year and Date
      2011-11-18
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Effects of Mg co-doping on Eu site in GaN by NH3-MBE2011

    • Author(s)
      Hiroshi Okada, Takanobu Suwa, Yasufumi Takagi, Hiroto Sekiguchi, and Akihiro Wakahara
    • Organizer
      International Conference on Nitride Semiconductors 2011
    • Place of Presentation
      Glasgow (英国)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Eu selective doped light emitting transistor based-on AlGaN/GaN hetero structure2011

    • Author(s)
      M.Kondo, T.Hata, H.Okada, A.Wakahara, S.Sato, T.Oshima
    • Organizer
      Asia-Pacific Interdisciplinary Research Conference 2011
    • Place of Presentation
      豊橋技術科学大学(豊橋)
    • Year and Date
      2011-11-18
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Effect of Nitrogen Source on Doping Properties of GaN : Eu Grown by MBE2011

    • Author(s)
      T.Suwa, Y.Takagi, H.Sekiguchi, H.Okada, A.Wakahara
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-06
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Effects of Mg co-doping on Eu site in GaN by NH3-MBE2011

    • Author(s)
      Hiroshi Okada, Takanobu Suwa, Yasufumi Takagi, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
    • Organizer
      International Conference on Nitride Semiconductors 2011
    • Place of Presentation
      Glasgow(英国)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] AlGaN/GaN発光デバイスの希土類イオン注入条件についての検討2010

    • Author(s)
      近藤 正樹、秦 貴幸、岡田 浩、若原 昭浩、古川 雄三、佐藤 真一郎、大島 武
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      浜松
    • Year and Date
      2010-05-13
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] AlGaN/GaN発光デバイスの希土類イオン注入条件についての検討2010

    • Author(s)
      岡田浩、秦貴幸、近藤正樹、若原昭浩、古川雄三、大島武‡佐藤真一郎
    • Organizer
      第5回高崎量子応用研究シンポジウム
    • Place of Presentation
      高崎シティギャラリー(高崎市高松町)
    • Year and Date
      2010-10-14
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] AlGaN/GaN発光デバイスの希土類イオン注入条件についての検討2010

    • Author(s)
      岡田 浩、秦 貴幸、近藤 正樹、若原 昭浩、古川 雄三、大島 武‡佐藤 真一郎
    • Organizer
      第5回高崎量子応用研究シンポジウム
    • Place of Presentation
      高崎
    • Year and Date
      2010-10-14
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Eu添加AlGaN/GaN HEMT構造を用いた発光素子の検討2010

    • Author(s)
      近藤正樹、秦貴幸、岡田浩、若原昭浩、古川雄三、佐藤真一郎、大島武
    • Organizer
      電子通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      静岡大学(静岡県浜松市)
    • Year and Date
      2010-05-13
    • Data Source
      KAKENHI-PROJECT-22560328
  • [Presentation] Optical gain of Eu^<3+> ion implanted AIGaN and its Al compositional dependence2007

    • Author(s)
      A. Wakahara, T. Shimojo, H. Kawai, H. Okada, T. Ohshima, S. Sato
    • Organizer
      The 7th Int. Conf. on Nitride Semiconductors
    • Place of Presentation
      Las Vegas, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Monolithic Optoelectronic Integrated Circuits (Invited)2007

    • Author(s)
      A. Wakahara
    • Organizer
      4th Int. Workshop on Nanoscale Semiconductor Devices
    • Place of Presentation
      Jeju, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Optical Gain of Eu3+ Ion Implanted AIGaN and Its Al Compositional Dependence2007

    • Author(s)
      A.Wakahara, T.Shimojo, H.Kawai, H.Okada, T.Ohshima, S.Sato
    • Organizer
      The 7th international conference on nitride semiconductors
    • Place of Presentation
      LasVegas,USA
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Optical Gain of Eu^<3+> Ion Implanted AlGaN and Its Al Compositional Dependence2007

    • Author(s)
      A. Wakahara, T. Shimojo, H. Kawai, H. Okada, T. Ohshima, S. Sato
    • Organizer
      The 7th international conference on nitride semiconductors
    • Place of Presentation
      Las Vegas, USA
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Luminescence Properties of Tb-Implanted AI_xGai_<-x>N Epitaxial Layer2007

    • Author(s)
      J.H. Park, Y. Furukawa, H. Okada, A. Wakahara
    • Organizer
      The 8th Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments
    • Place of Presentation
      Busan, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Optical Properties of AIGaN doped with Rare-Earth Impurity for CMOS Compatible Optoelectronic Integration2006

    • Author(s)
      A. Wakahara, H. Okada, J.-H. Park, F. Oikawa, A. Yoshida
    • Organizer
      The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments
    • Place of Presentation
      Nara, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Investigation of Tb-related green emission in group-Ill nitrides by time-resolved photoluminescence measurements2006

    • Author(s)
      A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, H. Itoh
    • Organizer
      2nd Workshop on Impurity Based Electroluminescent Devices and Materials
    • Place of Presentation
      Nanki-shirahama, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Optical investigation of Implantation Conditions on the luminescence Properties of Eu-doped Al_xGa_<-x>,N2006

    • Author(s)
      J.-H. Park, H. Okada, A. Wakahara
    • Organizer
      The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments
    • Place of Presentation
      Nam, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] A novel structure of Si/GaN/SiIγ-Al_2O_3/Si for MEMS applications2006

    • Author(s)
      S. Hatakenaka, A. Wakahara, H. Okada, M. Itoh, M. Ishida
    • Organizer
      Asia-Pacific Conf. on Transducers and Micro-Nano Tech
    • Place of Presentation
      Singapore
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Energy transfer process in AIGaN : Tb by time-resolved photoluminescence analysis2006

    • Author(s)
      A. Wakahara, K. Takemoto, F. Oikawa, H. Okada
    • Organizer
      International Union MRS-ICA-2006
    • Place of Presentation
      Jeju, Korea
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Energy-back-transfer process in rare-earth doped AlGaN2005

    • Author(s)
      A. Wakahara, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima H. Itho
    • Organizer
      MRS Spring meeting
    • Place of Presentation
      San Francisco, CA, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Impact of AIGaN on Luminescence Capability of Rare-earth Ions in AIGaN2005

    • Author(s)
      A. Wakahara
    • Organizer
      European MRS
    • Place of Presentation
      Strasbourg, France
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] Visible light-emission increased in rare-earth-doped GaN and related nitride alloy semiconductors2005

    • Author(s)
      A. Yoshida, Y. Nakanishi, A. Wakahara
    • Organizer
      4th ISSS Int. Conf. on Smart Materials, Structures and Systems
    • Place of Presentation
      Bangalore, India
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360160
  • [Presentation] 表面窒化により成長したGaAsN混晶の発光特性

    • Author(s)
      浦上法之、山根啓輔、関口寛人、岡田浩、若原昭浩
    • Organizer
      第62回応用物理学会春期学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] 希薄窒化物GaAsN混晶の成長における表面窒化の有効性

    • Author(s)
      浦上法之,関口寛人,岡田浩,若原昭浩
    • Organizer
      第61回応用物理学会春期学術講演会
    • Place of Presentation
      青山学院大相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Growth of GaAsN quantum wells by using surface nitridation enhanced N incorporation

    • Author(s)
      N. Urakami, H. Ito, H. Sekiguchi, H. Okada, A. Wakahara
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      守山市
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] 表面窒化によるGaAsN混晶の形成

    • Author(s)
      浦上法之、若原昭浩、関口寛人、岡田 浩
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Place of Presentation
      静岡大学(浜松)
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] Si基板上格子整合系GaAsPN混晶の高品質化

    • Author(s)
      麦倉俊、浦上法之、山根啓輔、関口寛人、岡田浩、若原昭浩
    • Organizer
      第62回応用物理学会春期学術講演会
    • Place of Presentation
      東海大学湘南キャパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] 希釈窒化物半導体における熱処理効果の硬X線光電子分光による評価

    • Author(s)
      冬野聡, 石川史太郎, 近藤正彦, 町田雅武, 陰地宏, 孫珍永, 梅野和行, 古川雄三, 若原昭浩
    • Organizer
      第72回 応用物理学会学術講演会
    • Place of Presentation
      山形
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Presentation] N-(group V) bonding defects in dilute nitride semiconductors proved by hard X-ray photoelectron spectroscopy

    • Author(s)
      S. Fuyuno, F. Ishikawa, M. Kondow, M. Machida, H. Oji, J.-Y. Son, K. Umeno, Y. Furukawa, and A. Wakahara
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      滋賀
    • Data Source
      KAKENHI-PROJECT-20360139
  • [Presentation] Growth of Dilute Nitride by Embedding Nitrided Layer and Its Application to GaAs(P)N Quantum Well Structure

    • Author(s)
      N. Urakami, H. Sekiguchi, H. Okada, A. Wakahara
    • Organizer
      18th International Conference on Molecular Beam Epitaxy (MBE2014)
    • Place of Presentation
      Flagstaff, Arizona, USA
    • Year and Date
      2014-09-07 – 2014-09-12
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] III-V-N Compounds for Multi-Junction Solar Cells on Si

    • Author(s)
      Akihiro Wakahara, Noriyuki Urakami, Keisuke Yamane, and Hiroto Sekiguchi
    • Organizer
      IEEE PVSC-40
    • Place of Presentation
      Denvor、USA
    • Year and Date
      2014-06-08 – 2014-06-13
    • Data Source
      KAKENHI-PROJECT-25286049
  • [Presentation] 表面窒化を用いたGaAsN混晶のN組成制御

    • Author(s)
      浦上法之・山根啓輔・関口寛人・岡田 浩・若原昭浩
    • Organizer
      電子情報通信学会研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2015-05-28 – 2015-05-29
    • Data Source
      KAKENHI-PROJECT-25286049
  • 1.  SASAKI Akio (10025900)
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  • 2.  YOSHIDA Akira (20023145)
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  • 3.  OKADA Hiroshi (30324495)
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  • 4.  NODA Susumu (10208358)
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  • 5.  WEBER Eicke r.
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  • 6.  YONEZU Hiroo (90191668)
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  • 7.  FURUKAWA Yuzo (20324486)
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  • 8.  更家 淳司 (90026154)
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  • 9.  坪内 和夫 (30006283)
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  • 10.  松本 俊 (00020503)
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  • 11.  KONDOW Masahiko (90403170)
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  • 12.  EMURA Shuichi (90127192)
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  • 13.  ISHIKAWA Fumitaro (60456994)
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  • 14.  SUSAKI Wataru (00268294)
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  • 15.  ISHIDA Makoto (30126924)
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  • 16.  OSHIMA Naoki (70252319)
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  • 17.  SAWADA Kazuaki (40235461)
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  • 18.  WADA NAOKI (90632787)
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  • 19.  TSUBOI TAIJI (60217370)
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  • 20.  松村 信男 (60107357)
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  • 21.  今枝 健一 (60314085)
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  • 22.  滝川 浩史 (90226952)
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  • 23.  鍋谷 暢一 (30283196)
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  • 24.  酒井 士郎 (20135411)
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  • 25.  塩貝 一樹 (50757664)
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  • 26.  野口 健太郎 (00335100)
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  • 27.  小田島 本有 (50214151)
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  • 28.  小林 睦 (30390462)
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  • 29.  黒田 一寿 (60331998)
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  • 30.  貝原 巳樹雄 (20290687)
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  • 31.  加藤 達也 (10707970)
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  • 32.  中村 基訓 (50435963)
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  • 33.  上杉 鉛一 (40249842)
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  • 34.  大橋 千里 (60462131)
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  • 35.  鳴海 雅哉 (10413709)
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  • 36.  松田 信彦 (40450150)
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  • 37.  安田 武司 (70610468)
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  • 38.  若杉 玲子 (00435489)
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  • 39.  松本 嘉孝 (40413786)
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  • 40.  HAYAFUJI Norio
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  • 41.  YANO Hiroshi
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  • 42.  ROUVIMOV Sergei
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  • 43.  LILIEBTALーWE ウェーバ ゼット
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  • 44.  LILIENTAL-WEBER Z.
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  • 45.  矢野 浩
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  • 46.  CHEN X.
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  • 47.  LーWEBER Z.
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  • 48.  LILIENTAL-WEBER Zuzanna
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  • 49.  CHEN Xiaoshung
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  • 50.  CHEN X
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  • 51.  ROUVIMOV S
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  • 52.  WEBER Z.L
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  • 53.  WEBER E.R
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    # of Collaborated Products: 0 results
  • 54.  CHEN Xiaoshu
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    # of Collaborated Products: 0 results
  • 55.  ROWVIMOV Ser
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  • 56.  LILIENTALーWE ゼット
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  • 57.  王 学論
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  • 58.  WANG xue-Lun
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    # of Collaborated Products: 0 results
  • 59.  徳田 崇
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