Che Songbek 崔成伯

… Alternative Names

CHE Songbek 崔成伯

CHE Song-bek 崔成伯

Less

Researcher Number	00361410
Other IDs
Affiliation (Current)	2025: 大阪大学, 大学院工学研究科, 招へい准教授
Affiliation (based on the past Project Information) *help	2010: 千葉大学, 大学院・工学研究科, 助教 2009: 千葉大, 工学(系)研究科(研究院), 助教 2007 – 2008: 千葉大学, 大学院・工学研究科, 助教 2006: 千葉大学, 工学部, 助手 2003 – 2004: 千葉大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator 窒化インジウム / 窒化物半導体 / 半導体レーザ / 青緑域発光デバイス / ナノ構造 Except Principal Investigator 窒化インジウム / ZnO / InN / AlN / GaN … More / Wide bandgap semiconductors / Crystal Polarity / Epitaxy / III-V nitrides / -族窒化物 / 分子線エピタキシー / 窒化カリウム / 酸化亜鉛 / 窒化アルミニュウム / 窒化ガリウム / ワイドギャップ化合物半導体 / 結晶極性 / エピタキシー / III-V族窒化物 / 貫通転位 / 分光エリプソメトリ / バンドパラメータ / 超格子・量子井戸 / 窒化インジウム(InN) / p型窒化インジウム / エピタキシ制御 / 空間・時間分解ルミネッセンス測定 / 光電子物性の赤外分光評価 / 超格子・量子構造 / 光物性・分光計測 / 短周期超格子 / MBE、エピタキシャル / ナノ構造光デバイス / 極広域分光計測 / 擬似混晶 / 超格子 / MBEエピタキシャル / ナノ構造デバイス / 表面・界面物性 / キャリアダイナミクス / 極広域分光 / 窒化物半導体 Less

1〜2分子層窒化インジウムナノ構造を用いた新規窒化物緑色半導体レーザの開拓Principal Investigator
- Principal Investigator
  
  崔成伯
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Chiba University
Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range Spectroscopy
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Chiba University
Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material control
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University

All 2010 2009 2008 2007 2006 2005 2004

All Journal Article Presentation Book Patent

[Book] 月刊ディスプレイ2009年2月号特集2 : 「LEDとデバイス技術」、「窒化インジウム系ナノ構造発光デバイスの技術開発」2009
- Author(s)
  崔成伯
- Total Pages
  9
- Publisher
  株式会社テクノタイムズ社
- Data Source
  KAKENHI-PROJECT-20760007
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  Y.Ishitani, K.Kato, H.Ogiwara, S.B.Che, A.Yoshikawa
- Journal Title
  
  106
  
  Pages: 113515-113515
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs2009
- Author(s)
  A.Yoshikawa, S.B.Che, Y.Ishitani, X.Wang
- Journal Title
  
  J.Crystal Growth 311(7)
  
  Pages: 2073-2073
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region2009
- Author(s)
  S.B.Che, A.Yuki, H.Watanabe, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 21001-21001
- NAID
  10025084321
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication of asymmetric GaN/InN/InGaN/GaN quantum-well light emitting diodes for reducing the quantum-confined Stark effect in the blue-green region2009
- Author(s)
  S.B.Che
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025084321
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-green Region2009
- Author(s)
  Songbek Che
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 21001-21001
- NAID
  10025084321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760007
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 92
  
  Pages: 132108-132108
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 92
  
  Pages: 132108-132108
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008
- Author(s)
  Y.Ishitani, M.Fujiwara, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 92
  
  Pages: 251901-251901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] 超薄膜InN/(In)GaN量子井戸活性層を用いた新規青緑域発光デバイス2008
- Author(s)
  崔成伯
- Journal Title
  
  信学技報 (掲載確定)
- NAID
  110007127199
- Data Source
  KAKENHI-PROJECT-20760007
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 103
  
  Pages: 53515-53515
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  J.Appl.Phys. 103
  
  Pages: 53515-53515
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] 超薄膜InN/(In)GaN量子井戸活性層を用いた新規青緑域発光デバイス2008
- Author(s)
  崔成伯
- Journal Title
  
  電子情報通信学会技術研究報告 108
  
  Pages: 51-56
- NAID
  110007127199
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal of Novel Structure Light Emitting Devices Consisting of InN/GaN MQWs with Ultrathin InN Wells in GaN Matrix2008
- Author(s)
  A.Yoshikawa, S.B.Che
- Journal Title
  
  International Journal of High Speed Electronics and Systems 18
  
  Pages: 993-993
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Infrared analysis of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 231903-231903
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Infrared analysis of hole properties of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, and A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 231903-231903
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  J.Cryst.Growth 301/302
  
  Pages: 496-496
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 242111-242111
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Polarity inversion in high Mg-doped In-polar InN epitaxial layers2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa, H.Sasaki, T.Shinagawa, S.Yoshida
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 81912-81912
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of one monolayer and fractional monolayer InN wells inserted in GaN matrix2007
- Author(s)
  A.Yoshikawa, S.B.Che, W.Yamaguchi, H.Saito, X.Wang, Y.Ishitani, E.S.Hwang
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 73101-73101
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and properties of coherent-structure In-polarity InN /In_<0.7>Ga_<0.3>N multi-quantum wells emitting at around 1.55μm2007
- Author(s)
  S.B.Che, T.Mizuno, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  J.Appl.Phys. 102
  
  Pages: 83539-83539
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 151901-151901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Broadening factors of E1(LO) phonon-plasmon coupled modes of hexagonal InN investigated by infrared reflectance measurements2007
- Author(s)
  Y.Ishitani, T.Ohira, X.Q.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Physical Review B 76
  
  Pages: 45206-45206
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Growth and properties of Mg-doped In-polar InN films2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 201913-201913
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and properties of coherent-structure In-polarity InN/ln0.7Ga0.3N multi-quantum wells emitting at around 1.55 μm2007
- Author(s)
  S. B. Che
- Journal Title
  
  Journal of Applied Physics 102
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of precise control of V/III ratio on In-rich InGaN epitaxial growth2006
- Author(s)
  S.B.Che
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 45 Part 2
- NAID
  10018460978
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy2006
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 90
  
  Pages: 73512-73512
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Study on influence of atomic hydrogen irradiation on growth and property of N-polarity InN2006
- Author(s)
  S.B.Che
- Journal Title
  
  Physica Status Solidi (c) Vol. 3, (6)
  
  Pages: 1540-1543
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of precise control of V/III ratio on In-rich InGaN epitaxial growth2006
- Author(s)
  S.B.Che, T.Shinada, T.Mizuno, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018460978
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Step-flow growth of In-polar InN by molecular beam epitaxy2006
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10017653670
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and characterization of 20 periods InN/InGaN MQWs2006
- Author(s)
  S.B.Che
- Journal Title
  
  Physica Status Solidi (c) Vol. 3, (6)
  
  Pages: 1953-1957
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  S.B.Che, W.Terashima, T.Ohkubo, M.Yoshitani, N.Hashimoto, K.Akasaka, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.7
  
  Pages: 2258-2262
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2005
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, K.Xu, X.Wang, M.Yoshitani, W.Terashima, N.Hashimoto
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831, E4.1
  
  Pages: 1-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, S.B.Che, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.7
  
  Pages: 2276-2280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire2005
- Author(s)
  N.Hashimoto, N.Kikuwaka, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  S.B.Che, W.Terashima, T.Ohkubo, M.Yoshitani, N.Hashimoto, K.Akasaka, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.7
  
  Pages: 2258-2262
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, S.B.Che, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.7
  
  Pages: 2276-2280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy2005
- Author(s)
  Song-Bek Che, Wataru Terashima, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. (in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy2005
- Author(s)
  A.Yoshikawa, N.Hashimoto, N.Kikukawa, S.B.Che, Y.Ishitani
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2005
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, K.Xu, X.Wang, M.Yoshitani, W.Terashima, N.Hashimoto
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire2005
- Author(s)
  N.Hashimoto, N.Kikuwaka, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831, E4.4
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  Song-Bek Che
- Journal Title
  
  phys.stat.sol.(c) (未定)
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy2005
- Author(s)
  A.Yoshikawa, N.Hashimoto, N.Kikukawa, S.B.Che, Y.Isihtani
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy2005
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-Hwan Roh, Masayuki Ohsugi, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy2005
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-Hwan Roh, Masayuki Ohsugi, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.86, 01192
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Temperature dependence of the optical properties of InN films grown by RF-MBE2004
- Author(s)
  Y.Ishitani, K.Xu, H.Masuyama, W.Terashima, N.Hashimoto, M.Yoshitani, Che Song-Bek, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.798
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Properties of fundamental absorption edge of InN crystal investigated by optical reflection and transmission spectra2004
- Author(s)
  Y.Ishitani, K.Xu, Che Song-Bek, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, K.Akasaka, T.Okubo, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241
  
  Pages: 2849-2853
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Temperature dependence of the optical properties of InN films grown by RF-MBE2004
- Author(s)
  Y.Ishitani, K.Xu, H.Masuyama, W.Terashima, N.Hashimoto, M.Yoshitani, Che Song-Bek, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.798, Y12.5
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Patent] 量子構造の評価方法、量子構造の製造方法、及び量子構造2010
- Inventor(s)
  吉川明彦、崔成伯、橋本直樹、深田善樹
- Industrial Property Rights Holder
  吉川明彦、崔成伯、橋本直樹、深田善樹
- Patent Publication Number
  2010-085330
- Filing Date
  2010-04-15
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 結晶軸配向性とファセット(結晶面)を制御した微結晶構造窒化物半導体光・電子素子2008
- Inventor(s)
  崔成伯、吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2008-10-26
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 結晶軸配向性とファセット(結晶面)を制御した微結晶構造窒化物半導体光・電子素子2007
- Inventor(s)
  崔成伯、吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2007-10-26
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体素子、光スイッチング素子及び量子カスケードレーザ素子2006
- Inventor(s)
  崔成伯, 吉川明彦, 石谷善博
- Industrial Property Rights Holder
  千葉大学学長
- Filing Date
  2006-06-19
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体光素子2006
- Inventor(s)
  崔成伯, 石谷善博, 吉川明彦
- Industrial Property Rights Holder
  千葉大学学長
- Filing Date
  2006-05-17
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Towards fabrication of very thin InN quantum wells in GaN matrix by MOVPE2008
- Author(s)
  Songbek Che
- Organizer
  The International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PROJECT-20760007
[Presentation] Towards fabrication of very thin InN quantum wells in GaN matrix by MOVPE2008
- Author(s)
  S.B.Che
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 超薄膜InN/GaN量子井戸からの誘導放出2008
- Author(s)
  崔成伯
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 超薄膜InN/GaN量子井戸からの誘導放出2008
- Author(s)
  崔成伯
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-20760007
[Presentation] 近赤外域光デバイスを目指したInN/InGaN多重量子井戸のシミュレーション、超薄膜InN/GaN量子井戸構造のシミュレーションと半導体レーザ構造への応用2008
- Author(s)
  崔成伯
- Organizer
  クロスライトソフトウェアセミナー
- Place of Presentation
  カナダ大使館
- Year and Date
  2008-09-12
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 超薄膜InN/(In)GaN量子井戸活性層を用いた新規青緑域発光デバイス2008
- Author(s)
  崔成伯
- Organizer
  電子情報通信学会
- Place of Presentation
  名古屋工業大学
- Data Source
  KAKENHI-PROJECT-20760007
[Presentation] 超薄膜InN/(In)GaN量子井戸活性層を用いた新規青緑域発光デバイス2008
- Author(s)
  崔成伯
- Organizer
  電子情報通信学会
- Place of Presentation
  名古屋工業大学
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Characterization of one monolayer-thick InN QWs in GaN matrix and their application for light-emitting devices2008
- Author(s)
  S.B.Che
- Organizer
  International symposium on semiconductor light emitting devices 2008
- Place of Presentation
  Arizona, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InN:state of the art- advances in epitaxy control, p-type doping, and novel nanostructures2008
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, X.Wang
- Organizer
  Plenary talk in International workshop on nitride semiconductors 2008
- Place of Presentation
  Montreux Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Characterization of onemonolayer-thick InN QWs in GaN matrix and their application for light-emitting devices2008
- Author(s)
  Songbek Che
- Organizer
  International Symposium on Semiconductor Light Emitting Devices(ISSLED 2008)
- Place of Presentation
  Phoenix, Arizona, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-20760007
[Presentation] One monolayer-thick InN QWs in GaN matrix and their application for light-emitting devices2008
- Author(s)
  S. B. Che
- Organizer
  Workshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone, Kanagawa, Japan
- Year and Date
  2008-03-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] One monolayer InN quantum wells in GaN matrix and Their application for visible light emitters2007
- Author(s)
  S. B. Che
- Organizer
  International Workshop on Advanced Photonic, Electronic, and Energy-Related Materials and Devices
- Place of Presentation
  Jeonju, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Optical Emission Properties of InN/In0.7Ga0.3N Multi-Quantum Wells on Bulk-GaN Substrates2007
- Author(s)
  S. B. Che
- Organizer
  The 7th International Conference on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 高密度光励起によるInN/InGaN多重量子井戸構造の光学特性評価2007
- Author(s)
  崔成伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Study on p-type dopability and polarity inversion in Mg-doped In-polar InN2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Organizer
  7^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] MBEによるInNの高品質エピタキシャル成長制御と物性制御」-"1分子層"InNナノ構造制御とその光デバイス応用について-2007
- Author(s)
  崔成伯
- Organizer
  プレISGN-2シンポジウム「未来を切り開く窒化物半導体結晶」
- Place of Presentation
  田町キャンパスイノベーションセンター
- Year and Date
  2007-12-19
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 1.55μm emission from In-polarity InN/In_<0.7>Ga_<0.3>N multi-quantum wells at room temperature2006
- Author(s)
  S.B.Che, Y.Ishitani, A.Yoshikawa, 他2名
- Organizer
  International Workshop on Nitride Semiconductors 2006
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PLANNED-18069002

1. YOSHIKAWA Akihiko (20016603)

# of Collaborated Projects: 2 results

# of Collaborated Products: 41 results
2. ISHITANI Yoshihiro (60291481)

# of Collaborated Projects: 2 results

# of Collaborated Products: 39 results
3. KUSAKABE Kazuhide (40339106)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. JIA Anwei (90280916)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. OKAMOTO Tamotsu (80233378)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Che Songbek 崔 成伯

CHE Songbek 崔 成伯

CHE Song-bek 崔 成伯

Research Projects

Research Products

Co-Researchers

1〜2分子層窒化インジウムナノ構造を用いた新規窒化物緑色半導体レーザの開拓Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range Spectroscopy

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material control

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] 月刊ディスプレイ2009年2月号特集2 : 「LEDとデバイス技術」、「窒化インジウム系ナノ構造発光デバイスの技術開発」2009

Author(s)

Total Pages

Publisher

Data Source

[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009

Author(s)

Journal Title

Data Source

[Journal Article] Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs2009

Author(s)

Journal Title

Data Source

[Journal Article] Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Fabrication of asymmetric GaN/InN/InGaN/GaN quantum-well light emitting diodes for reducing the quantum-confined Stark effect in the blue-green region2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-green Region2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Hole mobility in Mg-doped p-type InN films2008

Author(s)

Journal Title

Data Source

[Journal Article] Hole mobility in Mg-doped p-type InN films2008

Author(s)

Journal Title

Data Source

[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008

Author(s)

Journal Title

Data Source

[Journal Article] 超薄膜InN/(In)GaN量子井戸活性層を用いた新規青緑域発光デバイス2008

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008

Author(s)

Journal Title

Data Source

[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008

Author(s)

Journal Title

Data Source

[Journal Article] 超薄膜InN/(In)GaN量子井戸活性層を用いた新規青緑域発光デバイス2008

Author(s)

Journal Title

Che Songbek 崔成伯

CHE Songbek 崔成伯

CHE Song-bek 崔成伯