YOSHIKAWA Akihiko 吉川明彦

Researcher Number	20016603
Other IDs
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Affiliation (based on the past Project Information) *help	2014: 千葉大学, 学術研究推進機構・産業連携研究推進ステーション, 特任教授 2012 – 2013: 千葉大学, 産学連携・知的財産機構, 特任教授 2007 – 2011: Chiba University, 大学院・工学研究科, 教授 2010: 千葉大学, 工学部, 教授 2008: Chiba University, 工学研究科, 教授 … More 2006 – 2007: 千葉大学, 工学部, 教授 2001 – 2004: 千葉大学, 工学部, 教授 1989 – 1996: 千葉大学, 工学部, 教授 1986 – 1988: 千葉大学, 工学部, 助教授 1986: 千葉大, 工学部, 助教授 1985: 千葉大学, 工, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 電子材料工学 / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Science and Engineering Except Principal Investigator Applied materials / Science and Engineering
Keywords	Principal Investigator 化合物半導体 / MOVPE / ZnSe / 青色発光素子 / II-VI族化合物 / MOCVD / 表面光干渉法 / 物質設計 / エピタキシー / セレン化亜鉛 … More / SPI / 光プローブ / GaAs / ホトルミネッセンス / 塩素添加ZnS / アルミ添加ZnS / リチウム添加ZnSe / P型ZnSe / 太陽電池 / 超格子 / 窒化インジウム / 窒化物半導体 / 半導体光スイッチ / (IIaーVIb) / Chlorine-doped ZnS / Aluminium-doped ZnS / Low-Resistivity ZnS / Lithium-doped Znse / p-type ZnSe / Blue Light-Emitting-Devices / 有機金属化学気相成長法 / 【II】-【VI】族化合物 / 低抵抗ZnS / ZnO / InN / AlN / GaN / Wide bandgap semiconductors / Crystal Polarity / Epitaxy / III-V nitrides / -族窒化物 / 分子線エピタキシー / 窒化カリウム / 酸化亜鉛 / 窒化アルミニュウム / 窒化ガリウム / ワイドギャップ化合物半導体 / 結晶極性 / III-V族窒化物 / REFLECTANCE DIFFERENCE / SURFACE PHOTO INTERFRENCE / BLUE LIGHT DEVICES / OPTICAL PROBE / II-VI COMPOUNDS / COMPOUND SEMICONDUCTOR / 反射率差法 / 青色発光デバイス / zinc selenide / hetero epitaxy / compound semiconductors / suface photo-interference / optical probing / real time monitoring / 結晶成長 / ヘテロエピタキシ- / その場観察 / SPA / MOMBE / Atomic layer epitaxy / Photocatalysis / Compound semiconductors / Superlattices / (III-V)-(II-VI)超格子 / 有機金属分子線エピタキシ- / 有機金属分子線エピキシ- / 原子層エピタキシ- / 光励起CVD / (IIIーV)ー(IIーVI)超格子 / チッ素添加ZnSe / a-Si / 光CVD / エキシマレーザ / 薄膜・量子構造 / 貫通転位 / 分光エリプソメトリ / バンドパラメータ / 超格子・量子井戸 / 窒化インジウム(InN) / p型窒化インジウム / エピタキシ制御 / 空間・時間分解ルミネッセンス測定 / 光電子物性の赤外分光評価 / 超格子・量子構造 / 光物性・分光計測 / 短周期超格子 / MBE、エピタキシャル / ナノ構造光デバイス / 極広域分光計測 / 擬似混晶 / MBEエピタキシャル / ナノ構造デバイス / 表面・界面物性 / キャリアダイナミクス / 極広域分光 / 量子細線レーザ / ZnS)多層薄膜 / (SrS / ホットウォール成長法 / 電子励起 / プレーナドーピング / 量子箱 / 量子細線レ-ザ / (IIbーVIb)多層薄膜 / エレクトロゥミネッセンス / 補償機構 / ワイドギャップIIーVI族半導体 / 量子細線 / (IIbーVIb)超格子薄膜 / エレクトロルミネッセンス / 電子状態計算 / ワイドギャップIIーVI族化合物半導体 … More Except Principal Investigator 水銀増感光CVD法 / MOMBE / 評価技術 / プロセス / デバイス / 量子構造 / 半導体 / セレン化亜鉛 / ハイブリッド励起CVD法 / Arレ-ザ励起MOVPE / II-VI Compounds / Blue light Emitting Devices / Growth Kinetics Cracking / Growth of ZnSe Films / Metalorganic Molecular Beam Epitaxy / MOCVD / 分子線エピタキシー / 【II】-【VI】族化合物半導体 / 化合物半導体 / 表面モフォロジー / II-V1化合物 / 青色発光素子 / クラッキング特性 / ZnSeの成長機構 / ZnSeの結晶成長 / 有機金属分子線エピタキシー / Characterization / Process / Device / Quantum structure / Semiconductor / characterization / process / device / quantum structure / semiconductor / 不純物添加 / カルコゲナイド / カルコゲン / 残留不純物 / 電子捕獲準位 / ヘテロ界面 / 熱分解 / 硫化亜鉛 / 有機金属分子線エピタキシャル法 / 溶液成長法 / 減圧気相成長法 / 有機金属気相成長法 / ZnSe / II-VI族化合物 / 太陽電池 / ヘテロ接合 / 格子緩和 / 表面マイグレーション / クラッキング / 成長機構 / バンドギャップ / 窒化アルミニウム / 窒化インジウム / 発光デバイス / 赤外 / 紫外 / 半導体物性 / 結晶成長 / 光デバイス / 窒化物半導体 / デュアルビーム法 / アトミックレジスト / 表面光干渉法 / ディジタル光CVD法 / レ-ザ溶融再結晶化法 / 光酸素アニ-ル / ハイブリッド励起CVD / 水素ラジカルアニ-ル / 格子整合 / アクセプタ不純物 / 歪超格子 / 減圧CVD / 溶液成長 / ALE / IIーVI族化合物半導体 Less

Development of Fundamental Technologies of III-Nitride Semiconductor Optical Devices with "1-monolayer" Quantum Well StructuresPrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University
Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range SpectroscopyPrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Chiba University
Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material controlPrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  2001 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University
DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODESPrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Chiba University
Advanced Science and Technology for Semiconductor Materials and Devices
- Principal Investigator
  
  KUKIMOTO Hiroshi
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  Tokyo Institute of Technology
Advanced Science and Technology for Semiconductor Materials and Devices
- Principal Investigator
  
  KUKIMOTO Hiroshi
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Overseas Scientific Survey.
- Research Institution
  Tokyo Institute of Technology
A New in-situ Optical Probing Method for the Surface Reaction in Heteroepitaxy : Surface Photo-InterferencePrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  CHIBA UNIVERSITY
新機能光デバイスのための化合物半導体の物性制御の研究Principal Investigator
- Principal Investigator
  
  吉川明彦
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Chiba University
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
新機能光デバイスのための化合物半導体の物性制御の研究Principal Investigator
- Principal Investigator
  
  吉川明彦
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Chiba University
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
新機能光デバイスのための化合物半導体の物性制御の研究Principal Investigator
- Principal Investigator
  
  吉川明彦
- Project Period (FY)
  1990 – 1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Chiba University
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
化合物半導体の伝導性制御に関する研究
- Principal Investigator
  
  青木昌治
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo University of Science
Growth and Properties of (III-V)-(II-VI) Super Lattices by Photo-Assisted Atomic Layer EpitaxyPrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  1989 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Chiba University
化合物半導体の伝導性制御に関する研究
- Principal Investigator
  
  青木昌治
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo University of Science
超格子薄膜を窓層に持つ高効率化合物半導体太陽電池の開発
- Principal Investigator
  
  KASAI Haruo
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Chiba University
MOCVDによる青色発光素子用II-VI族化合物半導体の結晶成長と伝導型制御Principal Investigator
- Principal Investigator
  
  吉川明彦
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Chiba University
Physical Properties control of II-VI Compound Semiconductors for Blue Light-Emitting-DevicesPrincipal Investigator
- Principal Investigator
  
  YOSHIKAWA Akihiko
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Chiba University
エキシマレーザ誘起CVD法によるアモルファスシリコン太陽電池の高効率化の研究Principal Investigator
- Principal Investigator
  
  吉川明彦
- Project Period (FY)
  1985
- Research Category
  
  Grant-in-Aid for Energy Research
- Research Institution
  Chiba University
Development of Znse Blue Light Emitting Devices by Metalorganic Molecular Beam Epitaxy(MOMBE)
- Principal Investigator
  
  KASAI Haruo
- Project Period (FY)
  1985 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Chiba University

[Book] ワイドギャップ半導体　あけぼのから最前線へ2013
- Author(s)
  吉川明彦（監修）
- Total Pages
  404
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-23246056
[Book] 1枚の写真、極限的に薄い1分子層量子井戸による発光素子2008
- Author(s)
  吉川明彦
- Publisher
  O plus E
- Data Source
  KAKENHI-PLANNED-18069002
[Book] 窒化インジウム活性層の青色LED2008
- Author(s)
  吉川明彦
- Total Pages
  1
- Publisher
  セラミックス
- Data Source
  KAKENHI-PLANNED-18069002
[Book] 化合物半導体の最新技術大全集・第3章8節「InN系光デバイス応用に向けたエピタキシ制御とナノ構造制御の技術動向2007
- Author(s)
  吉川明彦
- Total Pages
  497
- Publisher
  (株)技術情報協会
- Data Source
  KAKENHI-PLANNED-18069002
[Book] 薄膜ハンドブック第4章薄膜の物性 2節4-[3](a)窒化物半導体2007
- Author(s)
  吉川明彦
- Total Pages
  1235
- Publisher
  (株)オーム社
- Data Source
  KAKENHI-PLANNED-18069002
[Book] Wide bandgap semiconductors2007
- Author(s)
  K.Takahashi, A.Yoshikawa, and A.Sandhu, 編集著者 : A.Yoshikawa Y.Ishitani, 他66名
- Publisher
  Springer Berlin
- Data Source
  KAKENHI-PLANNED-18069002
[Book] Wide bandgap semiconductors(K.Takahashi, A.Yoshikawa, A.Sandhu編集)2007
- Author(s)
  A.Yoshikawa, Y.Ishitani, 他66名
- Total Pages
  460
- Publisher
  Springer Berlin
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells2014
- Author(s)
  G. Chen, X. Q. Wang, K. Fu, X. Rong, H. Hashimoto, B. S. Zhang, F. J. Xu, N. Tang, A. Yoshikawa, W. K. Ge and B. Shen
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104 Issue: 17 Pages: 172108-172108
- DOI
  10.1063/1.4874982
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246056
[Journal Article] Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN Superstructure Magic Alloys fabricated at Raised Temperature (SMART)2014
- Author(s)
  Kazuhide Kusakabe and Akihiko Yoshikawa
- Journal Title
  
  SPIE Proceedings Gallium Nitride Materials and Devices IX
  
  Volume: 8986 Pages: 89861B-89861B
- DOI
  10.1117/12.2042121
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23246056
[Journal Article] Effect of Mg doping on the structural and free-charge carrier properties of InN films2014
- Author(s)
  M.-Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi and V. Darakchieva
- Journal Title
  
  J. Appl. Phys
  
  Volume: 115 Issue: 16 Pages: 163504-163504
- DOI
  10.1063/1.4871975
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23246056, KAKENHI-PROJECT-26600090
[Journal Article] Analysis of nouradiative carrier recombination processes in InN films by mid-infrared spectroscopy2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwra, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 42 Issue: 5 Pages: 875-881
- DOI
  10.1007/s11664-013-2550-y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J04851, KAKENHI-PROJECT-23246056, KAKENHI-PROJECT-25286048
[Journal Article] Carrier recombination processes in Mg-doped N-polar InN films2011
- Author(s)
  D.Imai, Y.Ishitani, M.Fujiwara, X.Q.Wang, K.Kusakabe, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 98
  
  Pages: 181901-181901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy2010
- Author(s)
  A.Yoshikawa, X.Wang, Y.Ishitani, A.Uedono
- Journal Title
  
  phys.stat.sol.(a) 207(5)
  
  Pages: 1011-1023
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy2010
- Author(s)
  A.Yoshikawa
- Journal Title
  
  Physica Status Solidi A (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Carrier recombination processes in In-polar n-InN in regions of low residual electron density2009
- Author(s)
  Y.Ishitani, K.Kato, H.Ogiwara, S.B.Che, A.Yoshikawa
- Journal Title
  
  106
  
  Pages: 113515-113515
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs2009
- Author(s)
  A.Yoshikawa
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2073-2079
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs2009
- Author(s)
  A.Yoshikawa, S.B.Che, Y.Ishitani, X.Wang
- Journal Title
  
  J.Crystal Growth 311(7)
  
  Pages: 2073-2073
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region2009
- Author(s)
  S.B.Che, A.Yuki, H.Watanabe, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 21001-21001
- NAID
  10025084321
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Search for free holes in InN : Mg-interplay between surface layer and Mg-acceptor doped interior2009
- Author(s)
  L.H.Dmowski, X.Wang, A.Yoshikawa, 他8名
- Journal Title
  
  J.Appl.Phys. 105
  
  Pages: 123713-123713
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Lattice polarity detection of InN by circular photogalvanic effect2009
- Author(s)
  Q.Zhang, X.Wang, Y.Ishitani, A.Yoshikawa, 他6名
- Journal Title
  
  Appl.Phys.Lett. 95
  
  Pages: 31902-31902
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] InNの結晶欠陥とキャリアダイナミクス2009
- Author(s)
  石谷善博, 藤原昌幸, 吉川明彦
- Journal Title
  
  日本結晶成長学会誌 36
  
  Pages: 45-45
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009
- Author(s)
  A.Uedono, X.Wang, Y.Ishitani, A.Yoshikawa, 他5名
- Journal Title
  
  J.Appl.Phys. 105
  
  Pages: 54507-54507
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] P型伝導InN実現とその物性評価-現状と問題点について-2008
- Author(s)
  吉川明彦
- Journal Title
  
  電子情報通信学会技術研究報告 108
  
  Pages: 45-50
- NAID
  110007127200
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 103
  
  Pages: 53515-53515
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of electron distribution in InN films on infrared reflectance spectrum of longitudinal optical phonon-plasmon interaction region2008
- Author(s)
  Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  J.Appl.Phys. 103
  
  Pages: 53515-53515
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Infrared analysis of hole properties of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, and A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 231903-231903
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Anisotropic damping of longitudinal optical phonon-plasmon coupling modes of InN films2008
- Author(s)
  Y.Ishitani, M.Fujiwara, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 92
  
  Pages: 251901-251901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix2008
- Author(s)
  A.Yoshikawa, Y.Ishitani, X.Wang, 他3名
- Journal Title
  
  J.Vac.Sci.Tech. B26
  
  Pages: 1551-1551
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix2008
- Author(s)
  A. Yoshikawa, S.B. Che, N. Hashimoto, H. Saito, Y. Ishitani, X.Q. Wang
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1551-1559
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-18069013
[Journal Article] Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix2008
- Author(s)
  A.Yoshikawa
- Journal Title
  
  Journal of Vacuum Science and Technology B 26
  
  Pages: 1551-1559
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Infrared analysis of Mg-doped p-type InN films2008
- Author(s)
  M.Fujiwara, Y.Ishitani, X.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 231903-231903
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Applied Physics Letters 92
  
  Pages: 132108-132108
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Hole mobility in Mg-doped p-type InN films2008
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 92
  
  Pages: 132108-132108
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Bowing of the band gap pressure coefficient in In_xGa_<1-x>N alloys2008
- Author(s)
  G.Franssen, Y.Ishitani, A.Yoshikawa, 他10名
- Journal Title
  
  J.Appl.Phys. 103
  
  Pages: 33514-33514
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal of Novel Structure Light Emitting Devices Consisting of InN/GaN MQWs with Ultrathin InN Wells in GaN Matrix2008
- Author(s)
  A.Yoshikawa, S.B.Che
- Journal Title
  
  International Journal of High Speed Electronics and Systems 18
  
  Pages: 993-993
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal of Novel Structure Light Emitting Devices Consisting of InN/GaN MQWs with Ultrathin InN Wells in GaN Matrix2008
- Author(s)
  A.Yoshikawa
- Journal Title
  
  International Journal of High Speed Electronics and Systems 18
  
  Pages: 993-1003
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 242111-242111
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] InN系窒化物半導体のエピタキシ制御とナノ構造作製2007
- Author(s)
  吉川明彦
- Journal Title
  
  応用物理第76巻、第5号
  
  Pages: 482-488
- NAID
  10019926500
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of one monolayer and fractional monolayer InN wells inserted in GaN matrix2007
- Author(s)
  A.Yoshikawa, S.B.Che, W.Yamaguchi, H.Saito, X.Wang, Y.Ishitani, E.S.Hwang
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 73101-73101
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 151901-151901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Growth and properties of Mg-doped In-polar InN films2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. 90
  
  Pages: 201913-201913
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  J.Cryst.Growth 301/302
  
  Pages: 496-496
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of one monolayer and fractional monolayer InN wells inserted in GaN matrix2007
- Author(s)
  A.Yoshikawa
- Journal Title
  
  Applied Physics Letters Vol. 90
  
  Pages: 73101-73101
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of one monolayer and fractional monolay InN wells inserted in GaN matrix2007
- Author(s)
  A. Yoshikawa
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Fabrication and properties of coherent-structure In-polarity InN /In_<0.7>Ga_<0.3>N multi-quantum wells emitting at around 1.55μm2007
- Author(s)
  S.B.Che, T.Mizuno, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  J.Appl.Phys. 102
  
  Pages: 83539-83539
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Broadening factors of E1(LO) phonon-plasmon coupled modes of hexagonal InN investigated by infrared reflectance measurements2007
- Author(s)
  Y.Ishitani, T.Ohira, X.Q.Wang, S.B.Che, A.Yoshikawa
- Journal Title
  
  Physical Review B 76
  
  Pages: 45206-45206
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] InN系窒化物半導体のエピタキシ制御とナノ構造作製2007
- Author(s)
  吉川明彦, 他2名
- Journal Title
  
  応用物理 76
  
  Pages: 482-482
- NAID
  10019926500
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Polarity inversion in high Mg-doped In-polar InN epitaxial layers2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa, H.Sasaki, T.Shinagawa, S.Yoshida
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 81912-81912
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of precise control of V/III ratio on In-rich InGaN epitaxial growth2006
- Author(s)
  S.B.Che, T.Shinada, T.Mizuno, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018460978
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy2006
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Journal of Applied Physics 90
  
  Pages: 73512-73512
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Step-flow growth of In-polar InN by molecular beam epitaxy2006
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10017653670
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069002
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, S.B.Che, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.7
  
  Pages: 2276-2280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2005
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, K.Xu, X.Wang, M.Yoshitani, W.Terashima, N.Hashimoto
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Influence of Al-preflow in MOVPE-grown GaN films analysed by X-ray reciprocal space map2005
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.2
  
  Pages: 2353-2356
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy2005
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-Hwan Roh, Masayuki Ohsugi, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Phonon Lifetimes and Phonon Decay in InN2005
- Author(s)
  J.W.Pomeroy, M.Kuball, H.Lu, W.J.Schaff, X.Wang, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. (in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Bandgap energy of InN and its temperature dependence2005
- Author(s)
  Y.Ishitani, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, S.B.Che, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.7
  
  Pages: 2276-2280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  S.B.Che, W.Terashima, T.Ohkubo, M.Yoshitani, N.Hashimoto, K.Akasaka, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.7
  
  Pages: 2258-2262
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire2005
- Author(s)
  N.Hashimoto, N.Kikuwaka, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831, E4.4
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy2005
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-Hwan Roh, Masayuki Ohsugi, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.86, 01192
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE2005
- Author(s)
  S.B.Che, W.Terashima, T.Ohkubo, M.Yoshitani, N.Hashimoto, K.Akasaka, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.2, No.7
  
  Pages: 2258-2262
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2005
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, K.Xu, X.Wang, M.Yoshitani, W.Terashima, N.Hashimoto
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831, E4.1
  
  Pages: 1-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire2005
- Author(s)
  N.Hashimoto, N.Kikuwaka, S.B.Che, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.831
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy2005
- Author(s)
  Song-Bek Che, Wataru Terashima, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. (in press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Molecular beam epitaxy growth of Gan, AIN and InN2005
- Author(s)
  Xinqiang Wang, Akihiko Yoshikawa
- Journal Title
  
  Progress in Crystal Growth and Characterization of Materials Vol.48
  
  Pages: 30-94
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy2005
- Author(s)
  A.Yoshikawa, N.Hashimoto, N.Kikukawa, S.B.Che, Y.Isihtani
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy2005
- Author(s)
  A.Yoshikawa, N.Hashimoto, N.Kikukawa, S.B.Che, Y.Ishitani
- Journal Title
  
  Appl.Phys.Lett. Vol.86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Molecular beam epitaxy growth of GaN, AlN and InN2005
- Author(s)
  Xinqiang Wang, Akihiko Yoshikawa
- Journal Title
  
  Progress in Crystal Growth and Characterization of Materials Vol.48
  
  Pages: 30-94
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Influence of Al-preflow in MOVPE-grown GaN films analysed by X-ray reciprocal space map2005
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.2,No.2
  
  Pages: 2353-2356
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth of indium nitride quantum dots on N-polarity GaN by molecular beam epitaxy2005
- Author(s)
  A.Yoshikawa
- Journal Title
  
  APPLIED PHYSICS LETTERS (4月18日号)
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy2004
- Author(s)
  O.H.Roh, Y.Tomita, M.Ohsugi, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.12
  
  Pages: 2835-2838
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE-grown ZnO films on sapphire substrate with double buffer layers2004
- Author(s)
  Xinqiang Wang, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1 No.4
  
  Pages: 1022-1025
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates2004
- Author(s)
  S.Suzuki, Y.Kaifuchi, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.3
  
  Pages: 475-478
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy2004
- Author(s)
  O.H.Roh, Y.Tomita, M.Ohsugi, X.Wang, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241, no.12
  
  Pages: 2835-2838
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy2004
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-hwan Roh, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43, No.6A
- NAID
  10013097096
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In-situ spectroscopic ellipsometry investigation and control of GaN growth mode in metalorganic vapor phase epitaxy at low pressures of 20 Torr2004
- Author(s)
  B.Cao, K.Xu, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Thin Solid Films Vol.455-456
  
  Pages: 661-664
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Optical characterization of hexagonal CdS layers grown on GaAs (111) by MBE : application of phase-shift-difference spectroscopy2004
- Author(s)
  S.Suzuki, Y.Takazawa, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1,No.4
  
  Pages: 657-661
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Properties of fundamental absorption edge of InN crystal investigated by optical reflection and transmission spectra2004
- Author(s)
  Y.Ishitani, K.Xu, Che Song-Bek, H.Masuyama, W.Terashima, M.Yoshitani, N.Hashimoto, K.Akasaka, T.Okubo, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241
  
  Pages: 2849-2853
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Surface and interface engineering in MBE-growth of ZnO epilayers on c-plane sapphire : polarity control and quality improvement of ZnO epilayers2004
- Author(s)
  A.Yoshikawa, Xinqiang Wang
- Journal Title
  
  Proceedings of International Symposium on ZnO and Relative Materials and Devices
  
  Pages: 1-6
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Temperature dependence of the optical properties of InN films grown by RF-MBE2004
- Author(s)
  Y.Ishitani, K.Xu, H.Masuyama, W.Terashima, N.Hashimoto, M.Yoshitani, Che Song-Bek, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.798
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Rotation-domains suppression and polarity control of ZnO epilayers grown on skillfully treated C-Al_2O_3 surfaces2004
- Author(s)
  A.Yoshikawa, X.Wang, Y.Tomita, Ok-Hwan Roh, H.Iwaki, Y.Ishitani
- Journal Title
  
  phys.stat.sol.(b) Vol.241, No.3
  
  Pages: 620-623
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Device-Quality Thick InN Epilayers ; Comparison between N-polarity and In-polarity Growth Processes2004
- Author(s)
  AKihiko Yoshikawa
- Journal Title
  
  MRS proceedings of MRS 2004 fall meeting
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE-grown ZnO films on sapphire substrate with double buffer layers2004
- Author(s)
  Xinqiang Wang, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1, No.4
  
  Pages: 1022-1025
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Temperature dependence of the optical properties of InN films grown by RF-MBE2004
- Author(s)
  Y.Ishitani, K.Xu, H.Masuyama, W.Terashima, N.Hashimoto, M.Yoshitani, Che Song-Bek, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.798, Y12.5
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Rotation-domains suppression and polarity control of ZnO epilayers grown on skillfully treated C-Al_2O_3 surfaces2004
- Author(s)
  A.Yoshikawa, X.Wang, Y.Tomita, Ok-Hwan Roh, H.Iwaki, Y.Ishitani
- Journal Title
  
  phys.stat.sol.(b) Vol.241,No.3
  
  Pages: 620-623
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE growth and characterization of hexagonal ZnCdMgSe layers and ZnCdSe/ZnCdMgSe QW structures on GaAs (111) substrates2004
- Author(s)
  S.Suzuki, Y.Kaifuchi, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(b) Vol.241, No.3
  
  Pages: 475-478
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy2004
- Author(s)
  Xinqiang Wang, Yusuke Tomita, Ok-hwan Roh, Yoshihiro Ishitani, Akihiko Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43,No.6A
- NAID
  10013097096
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Optical characterization of hexagonal CdS layers grown on GaAs (111) by MBE : application of phase-shift-difference spectroscopy2004
- Author(s)
  S.Suzuki, Y.Takazawa, H.Kumada, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.1, No.4
  
  Pages: 657-661
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Comparative Study of InN Growth on Ga- and N-polarity GaN Template by Molecular-beam epitaxy2003
- Author(s)
  K.Xu, W.Terashima, T.Hara, N.Hashimoto, M.Yoshitani, B.Cao, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.sata.sol.(c) vol.0,No.7
  
  Pages: 2814-2817
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Infrared measurements of InN films at low temperatures2003
- Author(s)
  Y.Ishitani, K.Xu, W.Terashima, N.Hashimoto, M.Yoshitani, T.Hata, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2838-2841
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deep sapphire-nitridation followed by Al-preflow at high temperatures2003
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2570-2574
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Optical Properties of Hexagonal CdS Layers Grown on GaAs (111)B2003
- Author(s)
  S.Suzuki, H.Kumada, Y.Kaifuchi, Y.Takazawa, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 314-317
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grown Al1N in MOVPE2003
- Author(s)
  B.Cao, K.Xu, B.W.Seo, S.Arita, S.Nishida, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2553-2556
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effects of film polarities on InN growth by molecular-beam epitaxy2003
- Author(s)
  K.Xu, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.83, No.2
  
  Pages: 251-253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN Project as CREST Program of JST : New evolution in Nano-processes/Nano-devices Focused on MBE-grown InN-based □-Nitrides2003
- Author(s)
  A.Yoshikawa, Y.Ishitani, K.Xu
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 31-31
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Growth and Properties of InN Epilayers by RF-MBE with In-situ Monitoring by RHEED, Spectroscopic Ellipsometry, and CAICISS2003
- Author(s)
  K.Xu, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 33-33
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth of Hexagonal CdS on GaAs (111)B Substrate2003
- Author(s)
  H.Kumada, S.Suzuki, Y.Kaifuchi, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 312-313
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effect of film polarities of InN grown by molecular beam epitaxy2003
- Author(s)
  K.Xu, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.83,No.2
  
  Pages: 251-253
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Infrared measurements of InN films at low temperatures2003
- Author(s)
  Y.Ishitani, K.Xu, W.Terashima, N.Hashimoto, M.Yoshitani, T.Hata, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2838-2841
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Dry etching of ZnO films and plasma-induced damage to optical properties2003
- Author(s)
  J.S.Park, H.J.Park, Y.B.Hahn, G.C.Yi, A.Yoshikawa
- Journal Title
  
  J.Vac.Sci.Technol. Vol.B21
  
  Pages: 800-800
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deep sapphire-nitridation followed by Al-preflow at high temperatures2003
- Author(s)
  B.W.Seo, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2570-2574
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface2003
- Author(s)
  Xinqiang Wang, H.Iwaki, M.Murakami, Xiaolong Du, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part2 No.2A
- NAID
  80015838068
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In situ investigation for polarity-controlled epitaxy processes of GaN and AIN in MBE and MOVPE growth2003
- Author(s)
  A.Yoshikawa, K.Xu
- Journal Title
  
  Optical Materials Vol.23
  
  Pages: 7-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface2003
- Author(s)
  Xinqiang Wang, H.Iwaki, M.Murakami, XiaolongDu, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42,Part2 No.2A
- NAID
  80015838068
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grown AIN in MOVPE2003
- Author(s)
  B.Cao, K.Xu, B.W.Seo, S.Aria, S.Nishida, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2553-2556
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effects of film polarities on InN growth by molecular-beam epitaxy2003
- Author(s)
  K.Xu, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett Vol.83,No.2
  
  Pages: 251-253
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy2003
- Author(s)
  K.Xu, N.Hashimoto, B.Cao, T.Hata, W.Terashima, M.Yoshitani, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No7
  
  Pages: 2790-2793
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE-grown ZnO films on sapphire with GaN buffer layer2003
- Author(s)
  Xinqiang Wang, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 304-304
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Step flow growth procedure for AIN layer on 6H-SiC substrate by MOVPE2003
- Author(s)
  Y.Ishitani, Y.Arita, N.Yoshida, H.Masuyama, A.Yoshikawa
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 284-287
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effect of film polarities of InN grown by molecular beam epitaxy2003
- Author(s)
  K.Xu, A.Yoshikawa
- Journal Title
  
  Appl.Phys.Lett. Vol.83, No.2
  
  Pages: 251-253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy2003
- Author(s)
  K.Xu, N.Hashimoto, B.Cao, T.Hata, W.Terashima, M.Yoshitani, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.7
  
  Pages: 2790-2793
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] InN Project as CREST Program of JST : New evolution in Nano-processes/Nano-devices Focused on MBE-grown InN-based III-Nitrides2003
- Author(s)
  A.Yoshikawa, Y.Ishitani, K.Xu
- Journal Title
  
  Proceedings of the First Asia-Pacific Workshop on Widegap Semiconductors
  
  Pages: 31-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Comparative Study of InN Growth on Ga-and N-polarity GaN Templates by Molecular-Beam Epitaxy2003
- Author(s)
  K.Xu, W.Terashima, T.Hata, N.Hashimoto, M.Yoshitani, B.Cao, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.7
  
  Pages: 2814-2817
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Dry etching of ZnO films plasma-induced damage to optical properties2003
- Author(s)
  J.S.Park, H.J.Park, Y.B.Hahn, G.C.Yi, A.Yoshikawa
- Journal Title
  
  J.Vac.Sci.Technol. Vol.B21
  
  Pages: 800-800
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MOCVD growth of device-quality GaN on sapphire using a three-step approach2002
- Author(s)
  B.L.Liu, M.Lachab, A.Jia, A.Yoshikawa, K.Takahashi
- Journal Title
  
  J.Crystal Growth Vol.234
  
  Pages: 637-645
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film2002
- Author(s)
  Xiaolong Du, M.Murakami, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.41,Part2 No.10A
- NAID
  110006350818
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In-situ Real-time Analysis on Strain Relaxation Process in GaN Growth on Sapphire by RF-MBE2002
- Author(s)
  K.Xu, N.Yano, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  J.Crystal Growth Vol.237-239
  
  Pages: 998-1002
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film2002
- Author(s)
  Xiaolong Du, M.Murakami, H.Iwaki, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.41, Part2 No.10A
- NAID
  110006350818
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Spectroscopic Ellipsometry In-situ Monitoring/control of GaN Epitaxial Growth in MBE and MOVPE2002
- Author(s)
  A.Yoshikawa, K.Xu, Y.Taniyasu, K.Takahashi
- Journal Title
  
  phys.stat.sol.(a) Vol.190
  
  Pages: 33-41
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity inversion of GaN films by trimethyl-aluminum preflow in low-pressure MOVPE growth2002
- Author(s)
  D.H.Lim, K.Xu, S.Arima, A.Yoshikawa, K.Takahashi
- Journal Title
  
  J.Appl.Phys. Vol.91,No.10
  
  Pages: 6461-6464
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity Control of GaN Grown on Sapphire Substrate by RF-MBE2002
- Author(s)
  K.Xu, N.Yano, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  J.Crystal Growth Vol.237-239
  
  Pages: 1003-1007
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity inversion of GaN films by trimethyl-aluminum preflow in low-pressure MOVPE growth2002
- Author(s)
  D.H.Lim, K.Xu, S.Arima, A.Yoshikawa, K.Takahashi
- Journal Title
  
  J.Appl.Phys. Vol.190, No.1
  
  Pages: 33-41
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Complete Elimination of Multi-angle Rotation Domains in ZnO Epilayers Grown on (0001) Sapphire Substrate2002
- Author(s)
  X.L.Du, M.Murakami, H.Iwaki, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(a) Vol.192, No.1
  
  Pages: 183-188
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity selection process and polarity manipulation of GaN in MOVPE and RF-MBE growth2002
- Author(s)
  A.Yoshikawa, K.Xu
- Journal Title
  
  Thin Solid Films Vol.412
  
  Pages: 38-43
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates2002
- Author(s)
  S.Suzuki, T.Nemoto, Y.Kaifuchi, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(a) Vol.192, No.1
  
  Pages: 195-200
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with Growth Rate of 1.3μm/h2002
- Author(s)
  K.Xu, W.Terashima, T.Hata, N.Hashimoto, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0,No.1
  
  Pages: 377-381
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Complete Elimination of Multi-angle Rotation Domains in ZnO Epilayers Grown on (0001) Sapphire Substrate2002
- Author(s)
  X.L.Du, M.Murakami, H.Iwaki, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(a) Vol.192,No1
  
  Pages: 183-188
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Cathodoluminescence properties of blue-emitting SrGa_2S_4 : Ce thin-films grown by low-temperature process2002
- Author(s)
  Katsu Tanaka, Shinji Okamoto, Hiroko Kominami, Yoichiro Nakanishi, Xialong Du, Akihiko Yoshikawa
- Journal Title
  
  J.Appl.Phys. Vol.92
  
  Pages: 834-834
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with Growth Rate of 1.3 μm/h2002
- Author(s)
  K.Xu, W.Terashima, T.Hata, N.Hashimoto, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(c) Vol.0, No.1
  
  Pages: 377-381
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Spectroscopic Ellipsometry In-situ Monitoring/control of GaN Epitaxial Growth in MBE and MOVPE2002
- Author(s)
  A.Yoshikawa, K.Xu, Y.Taniyasu, K.Takahashi
- Journal Title
  
  phys.stat.sol.(a) Vol.190,No.1
  
  Pages: 33-41
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] MBE Growth and Characterization of Hexagonal ZnCdSe Layers on GaAs(111)-A and -B Substrates2002
- Author(s)
  S.Suzuki, T.Nemoto, Y.Kaifuchi, Y.Ishitani, A.Yoshikawa
- Journal Title
  
  phys.stat.sol.(a) Vol.192,No.1
  
  Pages: 195-200
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity controlled growth of III-nitrides and their potential applications in optoelectronic devices2002
- Author(s)
  A.Yoshikawa, K.Xu
- Journal Title
  
  Optics in Information Systems
  
  Pages: 4-4
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] A New "Three-Step Method" for High Quality MOVPE Growth of III-Nitrides on Sapphire2001
- Author(s)
  A.Yoshikawa, K.Takahashi
- Journal Title
  
  phys.stat.sol.(a) Vol.1880, No.2
  
  Pages: 625-628
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] A New"Three-Step Method"for High Quality MOVPE Growth of III-Nitrides on Sapphire2001
- Author(s)
  A.Yoshikawa, K.Takahashi
- Journal Title
  
  phys.stat.sol.(a) Vol.188,No.2
  
  Pages: 625-628
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Experimental investigation of inclusion of hexagonal GaN phase-domain by varying nitrogen-beam direction to a (III) axis in MBE growth of cubic GaN2001
- Author(s)
  H.Hayashi, A.Hayashida, A.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  J.Crystal Growth Vol.227-228
  
  Pages: 404-409
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Kinetic process in polarity selection of GaN Grown by RF-MBE2001
- Author(s)
  K.Xu, N.Yano, A.W.Jia, A.Yoshikawa, K.Takahashi
- Journal Title
  
  phys.stat.sol.(b) Vol.228,No.2
  
  Pages: 523-527
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In-situ Monitoring of Surface Stoichiometry and Growth Kinetics Study of GaN (0001) in MOVPE by Spectroscopic Ellipsometry2001
- Author(s)
  Y.Taniyasu, A.Yoshikawa
- Journal Title
  
  J.Electronic Materials Vol.30, No.11
  
  Pages: 1402-1407
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Study on polarity manipulation processes of III-nitrides in MOVPE and RF-MBE growth2001
- Author(s)
  A.Yoshikawa, K.Xu
- Journal Title
  
  Proceedings of The 6^<th> China-Japan Symposium on thin Films Growth
  
  Pages: 55-58
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Kinetic process in polarity selection of GaN Grown by RF-MBE2001
- Author(s)
  K.Xu, N.Yano, A.W.Jia, A.Yoshikawa, K.Takahashi
- Journal Title
  
  phys.stat.sol.(b) Vol.228, No.2
  
  Pages: 523-527
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Cross-sectional Cathodoluminescence Study on Ga-polar and N-polar GaN Epilayers2001
- Author(s)
  X.L.Du, D.H.Lim, K.Xu, B.L.Liu, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Atomic Force Microscopy Study of GaN Grown on Al_2O_3 (0001) by LP-MOVPE2001
- Author(s)
  K.Xu, D.H.Lim, B.L.Liu, X.L.Du, G.H.Yu, A.W.Jia, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Cross-sectional Cathodoluminescence Study on Ga-polar and N-polar GaN Epilayers2001
- Author(s)
  X.L.Du, D.H.Lim, K.Xu, B.L.Liu, A.W.Jia, K.Takahashi, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639 G6.16
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] In-situ Monitoring of Surface Stoichiometry and Growth Kinetics Study of GaN (0001) in MOVPE by Spectroscopic Ellipsometry2001
- Author(s)
  Y.Taniyasu, A.Yoshikawa
- Journal Title
  
  J.Electronic Materials Vol.30,No.11
  
  Pages: 1402-1407
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Atomic Force Microscopy Study of GaN Grown on Al_2O_3 (0001) by LP-MOVPE2001
- Author(s)
  K.Xu, D.H.Lim, B.L.Liu, X.L.Du, G.H.Yu, A.W.Jia, A.Yoshikawa
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. Vol.639, G3.28
  
  Pages: 1-5
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Study on polarity manipulation processes of III-nitrides in MOVPE and RF-MBE growth2001
- Author(s)
  A.Yoshikawa, K.Xu
- Journal Title
  
  Proceedings of The 6^<th> China-Japan Symposium on Thin Films Growth
  
  Pages: 55-58
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Journal Article] Polarity-controlled growth of GaN on Sapphire Substrate by MOVPE and RF-MBE2001
- Author(s)
  A.Yoshikawa, K.Xu, A.W.Jia, K.Takahashi
- Journal Title
  
  Proceedings of China-Japan Workshop on Nitride Semiconductor Materials and Devices
  
  Pages: 17-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Patent] 光電変換素子及びその製造方法2014
- Inventor(s)
  草部　一秀、吉川　明彦
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-242709
- Filing Date
  2014-12-01
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2013
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-238746
- Filing Date
  2013-11-19
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2013
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-238747
- Filing Date
  2013-11-19
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 半導体光素子2012
- Inventor(s)
  崔　成伯、石谷　善博、吉川　明彦
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Filing Date
  2012-12-30
- Acquisition Date
  2014-06-20
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 結晶軸配向性とファセット（結晶面）を制御した微結晶構造窒化物半導体光・電子素子2012
- Inventor(s)
  崔成伯，吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-152608
- Filing Date
  2012-07-06
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] PHOTOELECTRIC CONVERSION DEVICE2012
- Inventor(s)
  A.Yoshikawa, Y.Ishitani, K.Kusakabe
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2012-03-02
- Overseas
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 半導体光素子2012
- Inventor(s)
  崔成伯，石谷善博，吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-289267
- Filing Date
  2012-12-30
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] PHOTOELECTRIC CONVERSION DEVICE AND CHARACTERISTIC INSPECTION METHOD FOR SAME2012
- Inventor(s)
  A.Yoshikawa, Y.Ishitani, K.Kusakabe
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2012-03-02
- Overseas
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、草部一秀、石谷善博
- Industrial Property Rights Holder
  吉川明彦、草部一秀、石谷善博
- Filing Date
  2011-02-28
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2011-03-14
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2011-03-14
- Overseas
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2011
- Inventor(s)
  吉川明彦、草部一秀、石谷善博
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2011-06-17
- Overseas
- Data Source
  KAKENHI-PROJECT-23246056
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Overseas
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-06-18
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2010
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Filing Date
  2010-08-05
- Overseas
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 量子構造の評価方法、量子構造の製造方法、及び量子構造2010
- Inventor(s)
  吉川明彦、崔成伯、橋本直樹、深田善樹
- Industrial Property Rights Holder
  吉川明彦、崔成伯、橋本直樹、深田善樹
- Patent Publication Number
  2010-085330
- Filing Date
  2010-04-15
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2009
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Industrial Property Number
  2009-183263
- Filing Date
  2009-08-06
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置及びその特性検査方法2009
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Industrial Property Number
  2010-055388
- Filing Date
  2009-03-12
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 光電変換装置2009
- Inventor(s)
  吉川明彦、石谷善博、草部一秀
- Industrial Property Rights Holder
  吉川明彦、石谷善博、草部一秀
- Industrial Property Number
  2009-185425
- Filing Date
  2009-08-06
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体薄膜の形成方法およびその方法を用いて製造された半導体薄膜付き基板およびその半導体薄膜付き基板を用いた半導体デバイス2008
- Inventor(s)
  吉川明彦, 他
- Industrial Property Rights Holder
  吉川明彦, 他
- Acquisition Date
  2008-09-19
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 結晶軸配向性とファセット(結晶面)を制御した微結晶構造窒化物半導体光・電子素子2008
- Inventor(s)
  崔成伯、吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2008-10-26
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体薄膜の形成方法およびその方法を用いて製造された半導体薄膜付き基板およびその半導体薄膜付き基板を用いた半導体デバイス2008
- Inventor(s)
  吉川明彦, 他
- Industrial Property Rights Holder
  吉川明彦, 他
- Acquisition Date
  2008-09-19
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法2008
- Inventor(s)
  貝渕良和、大道浩児、藤巻宗久、吉川明彦
- Industrial Property Rights Holder
  株式会社フジクラ、千葉大学
- Acquisition Date
  2008-01-30
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 結晶軸配向性とファセット(結晶面)を制御した微結晶構造窒化物半導体光・電子素子2007
- Inventor(s)
  崔成伯、吉川明彦
- Industrial Property Rights Holder
  千葉大学
- Filing Date
  2007-10-26
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体素子、光スイッチング素子及び量子カスケードレーザ素子2006
- Inventor(s)
  崔成伯, 吉川明彦, 石谷善博
- Industrial Property Rights Holder
  千葉大学学長
- Filing Date
  2006-06-19
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 半導体光素子2006
- Inventor(s)
  崔成伯, 石谷善博, 吉川明彦
- Industrial Property Rights Holder
  千葉大学学長
- Filing Date
  2006-05-17
- Data Source
  KAKENHI-PLANNED-18069002
[Patent] 窒化物系ヘテロ構造を有するデバイス及びその製造方法2003
- Inventor(s)
  吉川明彦徐科
- Industrial Property Rights Holder
  千葉大学長
- Filing Date
  2003-09-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450121
[Presentation] 分光エリプソメトリによるSMART太陽電池MOVPEプロセス開拓2014
- Author(s)
  草部一秀、王科、橋本直樹、吉川明彦
- Organizer
  第61回応用物理学会春期学術講演会
- Place of Presentation
  青山学院大相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] InNの非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性2014
- Author(s)
  今井大地、石谷善博、王新強、草部一秀、吉川明彦、森田健、馬ベイ
- Organizer
  第61回応用物理学会春期学術講演
- Place of Presentation
  青山学院大相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] RF-MBE成長SMART太陽電池の接合特性改善2014
- Author(s)
  王科、草部一秀、橋本直樹、吉川明彦
- Organizer
  第61回応用物理学会春期学術講演会
- Place of Presentation
  青山学院大相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] “縮退型ポンプ-プローブ法によるInNの超高速ダイナミクス観測2014
- Author(s)
  今井大地、森田健、塚原捷生、石谷善博、馬ベイ、王新強、草部一秀、吉川明彦
- Organizer
  第61回応用物理学会春期学術講演
- Place of Presentation
  青山学院大相模原キャンパス、相模原市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Recent progress in understanding free-charge carrier and structural properties of InN:Mg2013
- Author(s)
  M.-Y. Xie, S. Schöche, T. Hofmann, M. Schubert, N. Ben Sedrine, F. Tasnádi, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, Y. Nanishi, and V. Darakchieva
- Organizer
  2013 Spring European Material Research Society Symposium (E-MRS 2013 Spring)
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Future prospects and present problems for III-N solar cells: Theoretical and experimental2013
- Author(s)
  A. Yoshikawa, K. Kusakabe, and N. Hashimoto
- Organizer
  The Workshop on Frontiers in Electronics (WOFE-2013)
- Place of Presentation
  San Juan, Puerto Rico
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Junction Leakage Resistance of III-N Solar Cells grown on GaN Substrates by MBE and MOVPE2013
- Author(s)
  Kazuhide Kusakabe, Naoki Hashimoto, and Akihiko Yoshikawa
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-2013)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Epitaxy of InN and InGaN towards solar cells2013
- Author(s)
  Xinqiang Wang, Bo Shen, and Akihiko Yoshikawa
- Organizer
  2013 Spring European Material Research Society Symposium (E-MRS 2013 Spring)
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Electronic Structure Calculation of (InN)n/(GaN)m Digital Alloy with Quasi-particle Approximation2013
- Author(s)
  M. Ribeiro Jr., L. K. Teles , R. R. Pelá, L. G. Ferreira, K. Kusakabe, A. Yoshikawa, and M. Marques
- Organizer
  XXII International Materials Research Congress (IMRC) 2013
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of coherent-structure InN/GaN QW-based photonic devices: SMART technology for achieving wavelength tunings up to infrared by novel 1-ML InN/GaN matrix MQWs2013
- Author(s)
  Akihiko YOSHIKAWA
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco, California, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Effects of Carrier Transport and Local Lattice Temperature on Nonradiative Recombination processes in InN Films2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, Xinqiang Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Organizer
  10th International conference on nitride semiconductors (ICNS-2013)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Epitaxy and doping of InN by molecular beam epitaxy2013
- Author(s)
  Xinqiang Wang, Bo Shen, Guoyi Zhang, Akihiko Yoshikawa
- Organizer
  The 6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Tamsui, Taiwan
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] GaN基板上SMART太陽電池の接合特性評価2013
- Author(s)
  草部一秀、橋本直樹、吉川明彦
- Organizer
  第74回応用物理学会秋期学術講演会
- Place of Presentation
  同志社大、京都府
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Prospects and Problems for Developing High Performance III-N Solar Cells: Theoretical and Experimental2013
- Author(s)
  A. Yoshikawa, K. Kusakabe, N. Hashimoto, and X.Q. Wang
- Organizer
  Int. Forum on Development Strategy of the 3rd Generation Semiconductors
- Place of Presentation
  Dongguan, Guangdong, PRC
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] 窒化インジウムにおけるフォノン放出による非輻射再結合過程2013
- Author(s)
  今井大地、石谷善博、王新強、吉川明彦
- Organizer
  2013年度秋季物理学会
- Place of Presentation
  徳島大、徳島市
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Challenges for Growing Coherent-Structure InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys for SMART III-N Solar Cell Applications2013
- Author(s)
  A. Yoshikawa, K. Kusakabe, N. Hashimoto, and T. Itoi
- Organizer
  SemiconNano 2013
- Place of Presentation
  Lake Arrowhead, CA, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Progress in InN/GaN Ordered Alloy System toward SMART Solar Cells2013
- Author(s)
  Kazuhide Kusakabe, Naoki Hashimoto, and Akihiko Yoshikawa
- Organizer
  The 6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Tamsui, Taiwan
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] InNの非輻射再結合過程におけるフォノン輸送特性の影響2013
- Author(s)
  今井大地、石谷善博、王新強、吉川明彦
- Organizer
  第74回応用物理学会秋期学術講演会
- Place of Presentation
  同志社大、京都府
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal and Prospects of SMART III-Nitride Tandem Solar Cells with using InN/GaN Digital Alloys2012
- Author(s)
  Akihiko Yoshikawa
- Organizer
  2nd UNIST-KIST International Symposium
- Place of Presentation
  Ulsan, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Towards “Device-Quality Epitaxy” of InN, In-rich InGaN, and Fine-Structure InN/InGaN/GaN Superlattices2012
- Author(s)
  Akihiko Yoshikawa
- Organizer
  第73回応用物理学会学術講演会Symposium “Growth of In-rich InGaN and its application”
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] 窒化物半導体高効率太陽電池への挑戦 -SMART太陽電池の提案-2012
- Author(s)
  吉川明彦
- Organizer
  応用物理学会応用電子物性分科会研究例会「窒化物半導体光デバイスの最前線～デバイスと光物性～」
- Place of Presentation
  京都
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of SMART III-N Tandem Solar Cells on the Basis of Coherent-Structure InN/GaN Short-Period Superlattices2012
- Author(s)
  Akihiko YOSHIKAWA
- Organizer
  Collaborative Conference on Crystal Growth (3CG 2012)
- Place of Presentation
  Orlando, Florida, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of SMART III-Nitride Tandem Solar Cells with Coherent Magic Number Digital Alloys of InN/GaN Superlattices2012
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  International Conference and Workshop on Nanostructured Ceramics and other Nanomaterials 2012
- Place of Presentation
  Delhi, India(Invited)
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] MBE-Growth of Coherent-Structure InN/GaN Short-Period Superlattices as Ordered InGaN Ternary Alloys for III-N Solar Cell Application2012
- Author(s)
  Akihiko YOSHIKAWA
- Organizer
  AVS 59th International Symposium and Exhibition
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of SMART III-Nitride Tandem Solar Cells with Using InN/GaN Magic Number Digital Alloys2012
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  International Symposium on Plasma 2012
- Place of Presentation
  Aichi, Japan(Invited)
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Challenges for Growing Ordered InGaN Ternary Alloys: Proposal of SMART III-N Tandem Solar Cells Using InN/GaN Short-period Superlattices2012
- Author(s)
  Akihiko YOSHIKAWA
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Overview of Material Properties of InGaN Ternary Alloys for III-Nitride Tandem Solar Cells2012
- Author(s)
  Akihiko Yoshikawa
- Organizer
  International Workshop on SMART Green Innovation with Extended NSAP
- Place of Presentation
  Chiba, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Toward Controlled Epitaxy of Coherent Structure InN/GaN Short-Period Superlattices : Novel InGaN Digital Alloys for SMART III-Nitride Tandem Solar Cells2012
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  2012 LAWRENCE SYMPOSIUM ON EPITAXY
- Place of Presentation
  Scottsdale, AZ, USA
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Challenges for Achieving High Efficiency SMART III-N Solar Cells with Using Novel Ordered InGaN Ternary Alloys2012
- Author(s)
  Akihiko Yoshikawa
- Organizer
  German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices
- Place of Presentation
  Berlin, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Electron and hole scattering dynamics in InN films investigated by infrared measurements2011
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他4名
- Organizer
  European Material Research Society Spring Meeting
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InN系窒化物のエピタキシ制御・物性制御・ナノ構造制御の現状と展望-表面ストイキオメトリ制御から、pn接合形成まで-2011
- Author(s)
  吉川明彦, 他
- Organizer
  日本学術振興会第162委員会第75回研究会
- Place of Presentation
  キャンパス・イノベーションセンター東京
- Year and Date
  2011-07-22
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of "SMART" III-Nitride 4-Tandem Solar Cells with Magic Number Digital Alloys of (InN)_m/(GaN)_n Short-Period Superlattices2011
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  9^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow, UK(Invited)
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of "SMART" III-Nitride 4-Tandem Solar Cells with Magic Number Digital Alloys of (InN)n/(GaN)m Short-Period Superlattice2011
- Author(s)
  Akihiko Yoshikawa
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of "SMART" III-Nitride 4-Tandem Solar Cells with Magic Number Digital Alloys of (InN)_m/(GaN)_n Short-Period Superlattices2011
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  XX International Materials Research Congress
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2011-08-15
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of SMART III-Nitride Tandem Solar Cells with Magic Number Digital Alloys of InN/GaN Short-Period Superlattices2011
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  The Workshop on Frontiers in Electronics 2011
- Place of Presentation
  San Juan, Puerto Rico(Invited)
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Proposal of "SMART" III-Nitride Solar Cells with Magic Number Digital Alloys of (InN)_m/(GaN)_n Short-Period Superlattices2011
- Author(s)
  Akihiko Yoshikawa, et al.
- Organizer
  RAINBOW 4th Training Workshop (Keynote)
- Place of Presentation
  Bologna, Italy
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] 窒化物半導体超薄膜量子井戸構造/短周期超格子の形成とSMART太陽電池への展開-InGaN系窒化物半導体のエピタキシ制御から超薄膜ナノ構造光デバイス開発へ-2011
- Author(s)
  吉川明彦
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス福岡(基調講演)
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Spectroscopic ellipsometry study for achieving superfine-structure one monolayer-thick InN/GaN-matrix QWs by MBE2010
- Author(s)
  A.Yoshikawa
- Organizer
  5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Place of Presentation
  State University of New York, Albany, NY USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent Advances in Plasma-assisted MBE of 1ML-InN/GaN-matrix Nanostructures for Novel Solar Cell and Light Emitters2010
- Author(s)
  A.Yoshikawa
- Organizer
  2^<nd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma2010)
- Place of Presentation
  Meijo University, Nagoya, Japan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Asymmetric structure GaN/1ML-InN/InGaN/GaN QWs and its application for next generation high efficiency solar cells2010
- Author(s)
  A.Yoshikawa
- Organizer
  18th International Symposium on Nanostructures : Physics and Technology
- Place of Presentation
  St.Petersburg Academic University, St.Petersburg, Russia
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of high efficiency III-nitride solar cell on the basis of superstructure magic alloys fabricated at high temperature (SMAHT)2010
- Author(s)
  A.Yoshikawa
- Organizer
  Korea-Japan Workshop on Semiconductors for Energy Saving and Harvesting
- Place of Presentation
  Seoul National University, Seoul, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel one monolayer-InN/InGaN/GaN asymmetric structure QWs for next generation high efficiency solar cells2010
- Author(s)
  A.Yoshikawa, 他3名
- Organizer
  16^<th> International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Quasi-ternary multi-junction solar cells with magic numbers (n,m)2010
- Author(s)
  K.Kusakabe, Y.Ishitani, A.Yoshikawa
- Organizer
  International Workshop on Nitride Semiconductors, J2.8
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Mg impurity level in highly doped p-type InN studied by temperature dependence of infrared spectra2010
- Author(s)
  M.Fujiwara, Y.Ishitani, A.Yoshikawa, 他2名
- Organizer
  International Workshop on Nitride Semiconductors, L1.2
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of novel asymmetric structure GaN/1ML-InN/InGaN/GaN QWs for III-N based next generation high efficiency solar cells2010
- Author(s)
  A.Yoshikawa, 他2名
- Organizer
  19th European Workshop on Heterostructure Technology : HETECH
- Place of Presentation
  Fodele, Crete, Greece
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of novel asymmetric structure GaN/1ML-InN/InGaN/GaN QWs for III-N based next generation high efficiency solar cells2010
- Author(s)
  A.Yoshikawa
- Organizer
  19th European Workshop on Heterostructure Technology
- Place of Presentation
  Fodele, Crete, Greece
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Growth of Asymmetric Structure GaN/InN/InGaN/GaN QWs for Next Generation Solar Cells and Novel Light Emitters2010
- Author(s)
  A.Yoshikawa
- Organizer
  3rd International Symposium on Growth of Nitrides (ISGN3)
- Place of Presentation
  Le Corum, Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel InN/GaN QWs consisting of one-monolayer-thick InN wells coherently embedded in a GaN matrix2010
- Author(s)
  A.Yoshikawa
- Organizer
  The UK Nitrides Consortium (UKNC) 2010 Annual Conference
- Place of Presentation
  Tyndall National Institute, Cork, Ireland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel one monolayer-InN/InGaN/GaN asymmetric structure QWs for next generation high efficiency solar cells2010
- Author(s)
  A.Yoshikawa
- Organizer
  16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Spectroscopic ellipsometry study for achieving superfine-structure one monolayer-thick InN/GaN-matrix QWs by MBE2010
- Author(s)
  A.Yoshikawa, 他3名
- Organizer
  5^<th> International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Place of Presentation
  State University of New York, Albany NY, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent Advances in Plasma-assisted MBE of 1ML-InN/GaN-matrix Nanostructures for Novel Solar Cell and Light Emitters2010
- Author(s)
  A.Yoshikawa
- Organizer
  2^<nd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2010)
- Place of Presentation
  Meijo University, Nagoya, Japan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Carrier scattering and non-radiative recombination properties of n-type and p-type InN films2010
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他5名
- Organizer
  International Workshop on Nitride Semiconductors, L1.9
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel InN/GaN QWs consisting of one-monolayer-thick InN wells coherently embedded in a GaN matrix2010
- Author(s)
  A.Yoshikawa
- Organizer
  The UK Nitrides Consortium(UKNC)2010 Annual Conference
- Place of Presentation
  Tyndall National Institute, Cork, Ireland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Asymmetric structure GaN/1ML-InN/InGaN/GaN QWs and its application for next generation high efficiency solar cells2010
- Author(s)
  A.Yoshikawa, 他2名
- Organizer
  18^<th> International Symposium on Nanostructures : Physics and Technology
- Place of Presentation
  St.Petersburg Academic University, St.Petersburg, Russia
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent progress in fabrication and performance in novel blue-green light emitters by □1ML-InN/GaN-matrix nanostructures2009
- Author(s)
  A.Yoshikawa
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors 2009
- Place of Presentation
  Zhangjiajie, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Asymmetric Structure GaN/InN/InGaN/GaN QWs for Next Generation High Efficiency Solar Cells and Novel Light Emitters2009
- Author(s)
  A.Yoshikawa, 他2名
- Organizer
  Advanced Workshop on "Frontiers in Electronics" (WOFE 09)
- Place of Presentation
  Rincon, Puerto Rico
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent Advances and Challenges for successful p-type control of InN films with Mg acceptor doping by MBE2009
- Author(s)
  A.Yoshikawa, 他3名
- Organizer
  2009 European Material Research Society (E-MRS 2009) Fall Meeting,"A : InN material and alloys"
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Self-limiting growth of ～1ML-thick InN on Ga-polarity GaN by rf-plasma MBE2009
- Author(s)
  A.Yoshikawa
- Organizer
  1^<st> International Symposium on Advanced Plasma Science and its Applications (ISPlasma2009)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2009-03-10
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Growth of novel one-monolayer-InN/GaN-matrix nanostructure2009
- Author(s)
  A.Yoshikawa
- Organizer
  Workshop on "Physics of nitride-based nanostructured light-emitting devices"
- Place of Presentation
  Univ.of Bremen, Germany
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of III-N-based Novel Next generation Solar Cells and Novel Blue-Green Light Emitters2009
- Author(s)
  A.Yoshikawa, 他2名
- Organizer
  11th Int.Conference on Advanced Materials (ICAM 2009), Symposium M "Frontiers in Photonics & Photovoltaic Materials and Process"
- Place of Presentation
  Rio de Janeiro, Brazil
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal and achievement of novel visible-range optoelectronic devices based on 1 and 2 monolayer-thick InN QWs in GaN matrix2009
- Author(s)
  A.Yoshikawa
- Organizer
  The International Society for Optical Engineering Photonics West : Gallium Nitride Materials and Devices IV
- Place of Presentation
  San Jose, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Monolayer growth of InN on GaN and its potential application ton novel LEDs/LDs2009
- Author(s)
  A.Yoshikawa, 他2名
- Organizer
  2009 European Material Research Society (E-MRS 2009) Spring Meeting
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Asymmetric structure GaN/InN/InGaN/GaN QWs for next generation high efficiency solar cells and novel light emitters2009
- Author(s)
  A.Yoshikawa
- Organizer
  Advanced Workshop on Frontiers in Electronics
- Place of Presentation
  Rincon, Puerto Rico
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel InN/GaN QWs consisting of one monolayer-thick InN wells embedded in GaN matrix2009
- Author(s)
  A.Yoshikawa
- Organizer
  2^<nd> International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  Anan, Japan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of III-N-based novel next generation solar cells and novel blue-green light emitters2009
- Author(s)
  A.Yoshikawa
- Organizer
  11^<th> International Conference on Advanced Materials, Symposium M "Frontiers in Photonics & Photovoltaic Materials and Process"
- Place of Presentation
  Rio de Janeiro, Brazil
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent advances and challenges in p-type doping of InN and InN-based novel nanostructures2009
- Author(s)
  A.Yoshikawa
- Organizer
  European Materials Research Society 2009 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Deterioration of electronic and radiative properties in n- and p-type InN films by edge-type dislocations2009
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他3名
- Organizer
  8^<th> International Symposium on Nitride Semiconductors, FF3
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent progress in fabrication and performance in novel blue-green light emitters by 1ML-InN/GaN-matrix nanostructures2009
- Author(s)
  A.Yoshikawa
- Organizer
  Asia Pacific Workshop on Widegap Semiconductors 2009
- Place of Presentation
  Zhangjiajie, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent advances in InN-based III nitrides towards novel structure photonic devices2009
- Author(s)
  A.Yoshikawa
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal and achievement of novel visible-range optoelectronic devices based on 1 and 2 monolayer-thick InN QWs in GaN matrix2009
- Author(s)
  A.Yoshikawa, 他2名
- Organizer
  The International Society for Optical Engineering (SPIE) Photonics West : Gallium Nitride Materials and Devices IV
- Place of Presentation
  San Jose, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal and fabrication of novel InN/GaN QWs consisting of one monolayer-thick InN wells in GaN matrix2008
- Author(s)
  A.Yoshikawa
- Organizer
  Meijo International Symposium on Nitride Semiconductors 2008
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2008-11-21
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Fabrication and characterization of one monolayer InN-based novel nanostructures embedded in GaN matrix2008
- Author(s)
  A.Yoshikawa
- Organizer
  16^<th> International Symposium Nano structures : Physics and Technology
- Place of Presentation
  Vladivostok, Russia
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent advances in GaN and InN-based III-nitrides towards novel nanostructure photonic devices2008
- Author(s)
  A.Yoshikawa
- Organizer
  Nanotech Suzhou 2008
- Place of Presentation
  Suzhou, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Recent Advances in GaN and InN-based III-nitrides towards novel nanostructure photonic devices, -Through Activities in JSPS and JST-2008
- Author(s)
  A.Yoshikawa
- Organizer
  The 1st China Jiangsu Conference for International Technology Transfer & Commercialization (CITTC)
- Place of Presentation
  Nanjing, China
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InN : State of the art -advances in epitaxy control, p-type doping, and novel nanostructures2008
- Author(s)
  A.Yoshikawa
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InN:state of the art- advances in epitaxy control, p-type doping, and novel nanostructures2008
- Author(s)
  A.Yoshikawa, Y.Ishitani, S.B.Che, X.Wang
- Organizer
  Plenary talk in International workshop on nitride semiconductors 2008
- Place of Presentation
  Montreux Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 窒化インジウム系半導体発光デバイス開発への課題と展望2008
- Author(s)
  吉川明彦
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会第56回特別講演会
- Place of Presentation
  東京主婦会館プラザモフ
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] One monolayer InN QW in GaN2008
- Author(s)
  A. Yoshikawa
- Organizer
  PCSI-35 (The 35th annual Physics and Chemistry of Semiconductor Interfaces Conference)
- Place of Presentation
  New Mexico, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Advances in InN epitaxy and its material control towards novel InN-based nanostructure photonic devices2008
- Author(s)
  A.Yoshikawa
- Organizer
  JAPAN BRAZIL MEMORIAL SYMPOSIUM ON SCIENCE & TECHNOLOGY 1908-2008
- Place of Presentation
  San Paulo, Brazil
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel Structure InN/GaN MQWs Consisting of One Monolayer InN Wells Embedded in GaN Matrix2008
- Author(s)
  A.Yoshikawa
- Organizer
  MBE-Taiwan2008
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Novel InN/GaN MQW visible-light-emitters consisting of one monolayer-thick InN wells inserted in GaN matrix2008
- Author(s)
  A.Yoshikawa
- Organizer
  3^<rd> International Conference on Optical, Optoelectronic and Photonic Materials and Applications
- Place of Presentation
  Edmonton, Alberta, Canada
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Introduction, over view, and problems in p-type doping of InN2008
- Author(s)
  A. Yoshikawa
- Organizer
  Workshops on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  Hakone, Kanagawa, Japan
- Year and Date
  2008-03-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 窒化物半導体研究の新展開-新規デバイスの創出をめざして2008
- Author(s)
  吉川明彦
- Organizer
  第8回赤崎記念研究センターシンポジウム
- Place of Presentation
  名古屋大学
- Year and Date
  2008-11-20
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] P型伝導InN実現とその物性評価～-現状と問題点について-2008
- Author(s)
  吉川明彦
- Organizer
  電子情報通信学会
- Place of Presentation
  名古屋工業大学
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Hole density and anisotropic mobility of Mg-doped InN from the analysis of LO phonon - hole plasmon coupling properties2008
- Author(s)
  Y.Ishitani, A.Yoshikawa, 他3名
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Advances in InN epitaxy/nano-processes for novel InN/GaN fine nanostructures2008
- Author(s)
  A.Yoshikawa
- Organizer
  Workshop on recent advances in low dimensional structures and devices
- Place of Presentation
  Nottingham, UK
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Advances in InN Epitaxy and its material control by MBE towards novel functionality InN-based MQWs2008
- Author(s)
  A.Yoshikawa
- Organizer
  15^<th> International Conference on Molecular Beam Epitaxy
- Place of Presentation
  The University of British Columbia, Vancouver, Canada
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 「InNを基盤としたIII族窒化物ナノ構造作製の現状と光デバイス化への展望2007
- Author(s)
  吉川明彦
- Organizer
  応用物理学会関西支部主催セミナー SEMI Forum Japan 2007併催セミナー「窒化物半導体のフロンティア」
- Place of Presentation
  グランキューブ大阪
- Year and Date
  2007-06-18
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InNのエピタキシ制御と1分子層InN量子構造の作製2007
- Author(s)
  吉川明彦
- Organizer
  日本結晶学会第13回結晶成長講習会エピタキシャル成長の基礎と応用-窒化物半導体、カーボンナノチューブ成長の新展開まで-
- Place of Presentation
  東京農工大学
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Study on p-type dopability and polarity inversion in Mg-doped In-polar InN2007
- Author(s)
  X.Wang, S.B.Che, Y.Ishitani, A.Yoshikawa
- Organizer
  7^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Single monolayer-thick InN QWs in GaN matrix for novel visible-rangeoptoelectronic devices2007
- Author(s)
  A. Yoshikawa
- Organizer
  The 2007 Workshop on Frontiers in Electronics (WOFE-07)
- Place of Presentation
  Cozumel, Mexico
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 「窒化物の新展開」特定領域研究企画「窒化物光半導体のフロンティア」-材料潜在能力の極限発現-2007
- Author(s)
  名西〓之、藤岡洋、纐纈明伯、吉川明彦、川上養一、上殿明良、天野浩、平山秀樹、岸野克巳
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-ORGANIZER-18069013
[Presentation] Fabrication and characterization of novel structure InN-based III-N. MQWs consisting of one-monolayer & fractional-monolayerInN wells in GaN matrix2007
- Author(s)
  A. Yoshikawa
- Organizer
  North American Molecular Beam Epitaxy Conference 2007
- Place of Presentation
  New Mexico, USA
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] InNを基盤としたナノ構造光デバイス開発への展望と課題2007
- Author(s)
  吉川明彦
- Organizer
  2007年秋期第68回応用物理学会学術講演会シンポジウム「窒化物の新展開」特定領域研究企画「窒化物光半導体のフロンティア」-材料潜在能力の極限発現-
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] 1.55μm emission from In-polarity InN/In_<0.7>Ga_<0.3>N multi-quantum wells at room temperature2006
- Author(s)
  S.B.Che, Y.Ishitani, A.Yoshikawa, 他2名
- Organizer
  International Workshop on Nitride Semiconductors 2006
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Proposal of a new fine structure of InN/GaN MQWs : One monolayer and fractional monolayer InN wells in GaN barriers2006
- Author(s)
  A.Yoshikawa, Y.Ishitani, 他3名
- Organizer
  Physics of Light Matter Coupling in Nanostructures
- Place of Presentation
  Magdeburg, Germany
- Data Source
  KAKENHI-PLANNED-18069002
[Presentation] Study on structure perfection of one monolayer thick InN in hexagonal GaN using XRD techniques
- Author(s)
  N. Watanabe, D. Tajimi, N. Hashimoto, K. Kusakabe, K. Wang, T. Yamaguchi, A. Yoshikawa, and T. Honda
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] (InN)1/(GaN)n 短周期超格子SMART構造の光物性
- Author(s)
  今井大地, 草部一秀, 王科, 吉川明彦
- Organizer
  第75回秋季応用物理学会学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] High indium content (InN)m/(GaN)n SPSs on relaxed InGaN templates
- Author(s)
  Ke Wang, Kazuhide Kusakabe, Daichi Imai, and Akihiko Yoshikawa
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Light emission properties of ultra thin InN in the GaN matrix
- Author(s)
  T. Honda, T. Yamaguchi, T. Onuma, D. Tajimi, N. Watanabe, N. Hashimoto, K. Kusakabe and A. Yoshikawa
- Organizer
  International Conference on Metamaterials and Nanophysics 2014
- Place of Presentation
  Varadero, Cuba
- Year and Date
  2014-04-22 – 2014-05-01
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] InN and InGaN grown by molecular beam epitaxy
- Author(s)
  X.Q. Wang, X.T. Zheng, D.Y. Ma, B. Shen, G.Y. Zhang, and A. Yoshikawa
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] SMART III-Nitride tandem solar cells with using novel digital alloys of InN/GaN short-period superlattices: Theoretical and experimental
- Author(s)
  A. Yoshikawa, K. Kusakabe, N. Hashimoto, K. Wang, D. Imai, and X.Q. Wang
- Organizer
  The 4th Cross-Straight Workshop on Wide Band Gap Semiconductor
- Place of Presentation
  Dunhuang, PRC
- Year and Date
  2014-08-04 – 2014-08-07
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] (InN)1/(GaN)4 短周期超格子の擬似混晶化
- Author(s)
  今井大地, 草部一秀, 王科, 吉川明彦
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Novel structure photonic devices using “1 ML” InN/GaN matrix QW-based active layers
- Author(s)
  Akihiko Yoshikawa, Kazuhide Kusakabe, Ke Wang, and Daichi Imai
- Organizer
  10th International Symposium on Semiconductor Light Emitting Diodes
- Place of Presentation
  NSYSU, Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Invited
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] デジタル混晶SMART (InN)1/(GaN)4の低NH3分圧MOVPEプロセス
- Author(s)
  草部一秀, 吉川明彦
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] MOVPE-SMART太陽電池での実効In組成制御の検討
- Author(s)
  草部一秀, 今井大地, 王科, 吉川明彦
- Organizer
  第75回秋季応用物理学会学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Band Engineering Technology in Quasi InGaN Ternary Alloy System Based on SMART (InN)1/(GaN)n Short- Period Superlattices
- Author(s)
  Daichi Imai, Kazuhide Kusakabe, Ke Wang, and A. Yoshikawa
- Organizer
  MRS Fall meeting
- Place of Presentation
  Boston, U.S.A.
- Year and Date
  2014-11-29 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-23246056
[Presentation] Prospects and problems for III-N solar cells: Theoretical and experimental
- Author(s)
  Akihiko Yoshikawa, Kazuhide Kusakabe, Ke Wang, and Naoki Hashimoto
- Organizer
  International Conference on Metamaterials and Nanophysics 2014
- Place of Presentation
  Varadero, Cuba
- Year and Date
  2014-04-22 – 2014-05-01
- Invited
- Data Source
  KAKENHI-PROJECT-23246056

1. YAMAGA Shigeki (90158080)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
2. 高橋清 (10016313)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
3. ISHITANI Yoshihiro (60291481)

# of Collaborated Projects: 3 results

# of Collaborated Products: 100 results
4. 荒井滋久 (30151137)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. 小林洋志 (40029450)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
6. 吉田博 (30133929)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
7. 垂井康夫 (10143629)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
8. 坪内和夫 (30006283)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
9. 松村正清 (30110729)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
10. CHE Songbek (00361410)

# of Collaborated Projects: 2 results

# of Collaborated Products: 41 results
11. KUSAKABE Kazuhide (40339106)

# of Collaborated Projects: 2 results

# of Collaborated Products: 26 results
12. KASAI Haruo (00009226)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. KUKIMOTO Hiroshi (50013488)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. TAKEDA Yoshikazu (20111932)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. YAO Takafumi (60230182)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
16. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
17. KOBAYASHI Masakazu (10241936)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
18. JIA Anwei (90280916)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
19. 青木昌治 (80010619)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
20. 松本俊 (00020503)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
21. 岩井荘八 (40087474)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
22. LIM Kee Young

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
23. CHANG Kee Joo

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
24. MIN Suk Ki

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
25. LEE Hyung Jae

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
26. CHOI Byung Doo

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
27. NANISHI Yasushi (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
28. AMANO Hiroshi (60202694)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
29. KISHINO Katsumi (90134824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
30. KAWAKAMI Yoichi (30214604)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
31. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. FUNATO Mitsuru (70240827)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. ITOI Takaomi (50333670)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
34. OKAMOTO Tamotsu (80233378)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
35. AKASAKI Isamu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
36. SASAKI Akio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
37. NISHINAGA Tatau

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
38. KITAMURA Masayoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

YOSHIKAWA Akihiko 吉川 明彦

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Co-Researchers

Development of Fundamental Technologies of III-Nitride Semiconductor Optical Devices with "1-monolayer" Quantum Well StructuresPrincipal Investigator

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Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range SpectroscopyPrincipal Investigator

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Study on the polarity control of hexagonal-structure widegap compound semiconductors and its effect on the material controlPrincipal Investigator

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DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODESPrincipal Investigator

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A New in-situ Optical Probing Method for the Surface Reaction in Heteroepitaxy : Surface Photo-InterferencePrincipal Investigator

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新機能光デバイスのための化合物半導体の物性制御の研究Principal Investigator

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新機能光デバイスのための化合物半導体の物性制御の研究Principal Investigator

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新機能光デバイスのための化合物半導体の物性制御の研究Principal Investigator

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Growth and Properties of (III-V)-(II-VI) Super Lattices by Photo-Assisted Atomic Layer EpitaxyPrincipal Investigator

Principal Investigator

YOSHIKAWA Akihiko 吉川明彦

[Book] ワイドギャップ半導体　あけぼのから最前線へ2013

[Book] 薄膜ハンドブック第4章薄膜の物性 2節4-[3](a)窒化物半導体2007