Imanishi Masayuki 今西正幸

Researcher Number	00795487
Other IDs
Affiliation (Current)	2025: 大阪大学, 大学院工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2022 – 2025: 大阪大学, 大学院工学研究科, 准教授 2020 – 2021: 大阪大学, 工学研究科, 准教授 2018 – 2019: 大阪大学, 工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 30:Applied physics and engineering and related fields Except Principal Investigator Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 30010:Crystal engineering-related
Keywords	Principal Investigator OVPE / GaN / 低転位 / 気相法 / 高純度 / 熱力学計算 / 酸化ガリウム / 気相成長 / 格子定数 / 欠陥評価 … More / 低抵抗 / Ga連続供給 / 無転位 / 薄液 / 薄液成長 / Naフラックス法 / 高速成長 / ポイントシード / 高純度化 … More Except Principal Investigator 口径維持・拡大 / 気相成長 / インゴット / GaN / 口径制御 / OVPE法 / 高速成長 / GaNバルク成長 / 半導体 / リモートエピタキシー / 転位低減 / グラフェン / ヘテロエピタキシャル成長 Less

Naフラックス法における三次元成長モードを活用したデバイスキラー欠陥抑制技術の開発Principal Investigator
- Principal Investigator
  
  今西正幸
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  The University of Osaka
Improvement of hetero epitaxial growth using graphene
- Principal Investigator
  
  成塚重弥
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Meijo University
OVPE法による口径拡大・超厚膜GaNインゴット作製技術
- Principal Investigator
  
  森勇介
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Growth technique of High quality gallium oxide crystal by toxic gas-free OVPE methodPrincipal Investigator
- Principal Investigator
  
  Imanishi Masayuki
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium sourcePrincipal Investigator
- Principal Investigator
  
  Imanishi Masayuki
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka University
Enlargement of defect-free GaN crystals by the Na-flux methodPrincipal Investigator
- Principal Investigator
  
  Imanishi Masayuki
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka University

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation Patent

[Journal Article] Influence of oxygen-related defects on the electronic structure of GaN2022
- Author(s)
  Satoshi Ohata, Takahiro Kawamura, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Tomoaki Sumi, and Junichi Takino
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Pages: 061004-061004
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02639
[Journal Article] "Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method"2022
- Author(s)
  Hyoga Yamauchi, Ricksen Tandryo, Takumi Yamada, Kosuke Murakami, Shigeyoshi Usami, Masayuki Imanishi, Mihoko Maruyama, Masashi Yoshimura and Yusuke Mori,
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 5 Pages: 055505-055505
- DOI
  10.35848/1347-4065/ac5787
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02639
[Journal Article] High-rate OVPE-GaN crystal growth at a very high temperature of 1300℃2022
- Author(s)
  Ayumu Shimizu, Shigeyoshi Usami, Masahiro Kamiyama, Itsuki Kawanami, Akira Kitamoto, Masayuki Imanishi, Mihoko Maruyama, Masashi Yoshimura, Masahiko Hata, Masashi Isemura, Yusuke Mori
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 3 Pages: 035503-035503
- DOI
  10.35848/1882-0786/ac4fa8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02639
[Journal Article] Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method2022
- Author(s)
  Ayumu Shimizu, Akira Kitamoto, Masahiro Kamiyama, Shintaro Tsuno, Keiju Ishibashi, Shigeyoshi Usami, Masayuki Imanishi, Mihoko Maruyama, Masashi Yoshimura, Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Masahiko Hata, Masashi Isemura, Yusuke Mori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 581 Pages: 126495-126495
- DOI
  10.1016/j.jcrysgro.2021.126495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02639
[Journal Article] Activation free energies for formation and dissociation of N-N, C-C, and C-H bonds in a Na-Ga melt2021
- Author(s)
  Kawamura Takahiro、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada
- Journal Title
  
  Computational Materials Science
  
  Volume: 194 Pages: 110366-110366
- DOI
  10.1016/j.commatsci.2021.110366
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18K04957, KAKENHI-PROJECT-20H02639
[Journal Article] Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020?cm?32021
- Author(s)
  Agulto Verdad C.、Iwamoto Toshiyuki、Kitahara Hideaki、Toya Kazuhiro、Mag-usara Valynn Katrine、Imanishi Masayuki、Mori Yusuke、Yoshimura Masashi、Nakajima Makoto
- Journal Title
  
  Scientific Reports
  
  Volume: 11 Issue: 1 Pages: 18129-18129
- DOI
  10.1038/s41598-021-97253-z
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02206, KAKENHI-PROJECT-20H02639
[Journal Article] Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation2021
- Author(s)
  Akira Uedono, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masayuki Imanishi, Shoji Ishibashi, Yusuke Mori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 570 Pages: 126219-126219
- DOI
  10.1016/j.jcrysgro.2021.126219
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02639, KAKENHI-PROJECT-21K18812, KAKENHI-PROJECT-23K21082
[Patent] 金属酸化物結晶の製造方法、金属酸化物エピタキシャル結晶積層基板の製造方法、半導体装置の製造方法、金属酸化物結晶、金属酸化物エピタキシャル結晶積層基板、半導体装置、及び金属酸化物結晶製造装置2021
- Inventor(s)
  今西正幸、森勇介、荒木理恵、秦雅彦
- Industrial Property Rights Holder
  今西正幸、森勇介、荒木理恵、秦雅彦
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-152705
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] 炭素ドープしたOVPE-GaNの電気特性評価2024
- Author(s)
  宇佐美茂佳, 東山律子, 今西正幸, 滝野淳一, 隅智亮, 岡山芳央, 吉村政志, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00275
[Presentation] OVPE-GaN成長における異なるGa酸化剤の変換効率調査2024
- Author(s)
  中園翼, 宇佐美茂佳, 今西正幸, 隅智亮, 滝野淳一, 岡山芳央, 丸山美帆子, 吉村政志, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00275
[Presentation] OVPE法を用いたGaNのエピタキシャル成長とパワーデバイス応用2023
- Author(s)
  宇佐美茂佳，東山律子, 滝野淳一, 太田博, 渡邉浩崇, 今西正幸, 隅智亮, 岡山芳央, 三島友義, 新田州吾, 本田善央, 吉村政志, 秦雅彦, 伊勢村雅士, 天野浩, 森勇介
- Organizer
  第84回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-23H00275
[Presentation] Effect of hydrogen partial pressure on GaN high-speed growth by OVPE2023
- Author(s)
  Shigeyoshi Usami, Masayuki Imanishi, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masashi Yoshimura, Masahiko Hata, Masashi Isemura, Yusuke Mori
- Organizer
  International Conference on Nitride Semiconductors 14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00275
[Presentation] Influence of Point and Complex Defects on Electronic Structure of GaN2022
- Author(s)
  Takahiro Kawamura, Satoshi Ohata, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori
- Organizer
  9th International Conference on Light-Emitting Devices and Their Industrial Applications　(LEDIA2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] OVPE法によるサファイア及びGa2O3基板上β-Ga2O3結晶成長2022
- Author(s)
  今西正幸, 小林大也, 奥村加奈子, 細川敬介, 宇佐美茂佳, 富樫理恵, 秦雅彦, 森勇介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] Ga2O, H2O原料ガスを用いた高温・高速酸化ガリウム成長の熱力学的検討2022
- Author(s)
  富樫理恵，鈴木明香里，石田遥夏, 宇佐美茂佳,今西正幸，秦雅彦，森勇介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] GaNの熱伝導率に対する点欠陥の影響2022
- Author(s)
  河村貴宏，西山稜悟，秋山亨，宇佐美茂佳，今西正幸，吉村政志，森勇介
- Organizer
  第14回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] OVPE法によるβ相酸化ガリウム結晶のエピタキシャル成長2022
- Author(s)
  今西正幸, 細川敬介, 奥村加奈子, 宇佐美茂佳, 富樫理恵, 湊雅彦, 森勇介
- Organizer
  第51回結晶成長国内会議（JCCG-51）
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] Effect of point and complex defects on optical properties of GaN2022
- Author(s)
  河村貴宏，大畑智嗣，場崎航平，宇佐美茂佳，今西正幸，吉村政志，森勇介
- Organizer
  光・量子ビーム科学合同シンポジウム2022
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] OVPE法によるサファイア及びGa2O3基板上β-Ga2O3結晶成長2022
- Author(s)
  今西正幸, 小林大也, 奥村加奈子, 細川敬介, 宇佐美茂佳, 富樫理恵, 秦雅彦, 森勇介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] Naフラックス法を用いたLi添加による {2021} 面GaN単結晶の平坦化2022
- Author(s)
  高橋響, Ricksen Tandryo, 濱田和真, 村上航介, 宇佐美茂佳, 今西正幸, 丸山美帆子, 吉村政志, 森勇介
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックス法を用いた低転位GaN基板の再成長における転位増加の抑制2021
- Author(s)
  山内彪我, 山田拓海, 村上航介, 宇佐美茂佳, 今西正幸, 丸山美帆子, 吉村政志, 森勇介
- Organizer
  第4回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Fabrication of OVPE-GaN substrate with low absorption coefficient by defect suppression for laser slicing2021
- Author(s)
  Hiroaki Mifune, Shigeyoshi Usami, Masahiro Kamiyama, Masayuki Imanishi, Mihoko Maruyama, Masashi Yoshimura, Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Masahiko Hata, Masashi Isemura and Yusuke Mori
- Organizer
  The 40th Electronic Materials Symposium (EMS-40)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Ga2O, H2O原料ガスを用いたβ型酸化ガリウム成長の熱力学解析2021
- Author(s)
  富樫理恵，鈴木明香里，石田　遥夏, 今西正幸，秦雅彦，森勇介
- Organizer
  第2回半導体ナノフォトニクス研究会
- Data Source
  KAKENHI-PROJECT-21K18910
[Presentation] レーザースライスに向けたOVPE-GaN基板の着色低減及び電気特性評価2021
- Author(s)
  三船浩明, 宇佐美茂佳, 神山将大, 今西正幸, 丸山美帆子, 吉村政志, 隅智亮, 滝野淳一, 岡山芳央, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Observation of Helical Dislocations in HVPE GaN grown on Na-Flux GaN substrate2021
- Author(s)
  havpreeta Pratap Charan, Ricksen Tandryo, Masayuki Imanishi, Kosuke Murakami, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori
- Organizer
  第4回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] GaN中の点欠陥が光学特性に与える影響の解明2021
- Author(s)
  大畑智嗣, 河村貴宏, 今西正幸, 吉村政志, 森勇介
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] High-rate GaN crystal growth by the suppression of polycrystal formation at a high temperature above 1250℃ using the OVPE method2021
- Author(s)
  Ayumu Shimizu, Shigeyoshi Usami, Masahiro Kamiyama, Masayuki Imanishi, Mihoko Maruyama, Masashi Yoshimura, Masahiko Hata, Masashi Isemura and Yusuke Mori
- Organizer
  The 40th Electronic Materials Symposium (EMS-40)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Growth of a High Quality GaN Wafer from Point Seeds by the Na-Flux Method2021
- Author(s)
  Masayuki Imanishi, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura and Yusuke Mori
- Organizer
  AM-FPD21
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] 1300℃高温環境下での多結晶抑制によるOVPE-GaN結晶の高速成長2021
- Author(s)
  清水歩, 宇佐美茂佳, 神山将大, 今西正幸, 丸山美帆子, 吉村政志, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] ポイントシード技術を用いたNaフラックス法による高品質・大口径GaNウエハの作製2021
- Author(s)
  今西正幸，村上航介，宇佐美茂佳，丸山美帆子，吉村政志，森勇介
- Organizer
  第50回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックス法を用いたGaN結晶のホモエピタキシャル成長における転位挙動の調査2021
- Author(s)
  山内彪我, Ricksen Tandryo, 山田拓海, 村上航介, 宇佐美茂佳, 今西正幸, 丸山美帆子, 吉村政志, 森勇介
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] In-situ monitoring of GaN crystal growth by the Na-flux method via electrical resistance measurement2021
- Author(s)
  Koichi Itozawa, Ricksen Tandryo, Kosuke Murakami, Masayuki Imanishi, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura and Yusuke Mori
- Organizer
  The 40th Electronic Materials Symposium (EMS-40)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] 超低核生成頻度条件での多結晶抑制による低転位バルクOVPE-GaN結晶の高速成長2021
- Author(s)
  清水歩, 宇佐美茂佳, 櫻井悠貴, 川波一貴,今西正幸, 丸山美帆子, 吉村政志, 隅智亮, 滝野淳一, 岡山芳央, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックス法におけるLi添加による(20-21)面GaN単結晶の表面平坦化効果2021
- Author(s)
  髙橋響, 糸澤孝一, Ricksen Tandryo, 宇佐美茂佳, 今西正幸, 丸山美帆子, 吉村政志, 森勇介
- Organizer
  第4回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Dynamic温度成長条件によるNaフラックス中の窒素高濃度化2020
- Author(s)
  Ricksen Tandryo,村上航介,山田拓海,北村智子,今西正幸,吉村政志,森勇介
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K14138
[Presentation] N2Oガス添加によるOVPE-GaN結晶の高速厚膜化の実現2020
- Author(s)
  清水歩, 神山将大, 北本啓, 宇佐美茂佳, 今西正幸, 丸山美帆子, 吉村政志, 隅智亮, 滝野淳一, 岡山芳央, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第3回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックス法における電気抵抗測定を用いた結晶成長に伴う溶液状態変化のモニタリング2020
- Author(s)
  糸澤孝一,Ricksen Tandryo,村上航介,今西正幸,吉村政志,森勇介
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K14138
[Presentation] N2Oガスを三属供給源に用いたOVPE法によるGaN結晶成長2020
- Author(s)
  川波一貴, 清水歩, 神山将大, 北本啓, 宇佐美茂佳, 今西正幸, 丸山美帆子, 吉村政志, 隅智亮, 滝野淳一, 岡山芳央, 秦雅彦, 伊勢村雅士, 森勇介
- Organizer
  第3回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックス法における電気抵抗変化とGaN結晶成長の関連性2020
- Author(s)
  糸澤孝一、Ricksen Tandoryo、村上航介、今西正幸、丸山美帆子、吉村政志、森勇介
- Organizer
  第3回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックスポイントシード法による低転位・大口径GaN結晶成長2020
- Author(s)
  今西正幸、村上航介、宇佐美茂佳、吉村政志、森勇介
- Organizer
  第12回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックスポイントシード法における GaN結晶成長形状のGa比率-気相保持時間依存性2020
- Author(s)
  藤原淳平, 糸澤孝一, Ricksen Tandryo, 村上航介, 今西正幸, 丸山美帆子, 吉村政志, 森勇介
- Organizer
  第3回結晶工学ⅹISYSE 合同研究会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Naフラックス法における炭素添加のNa-Ga融液電気抵抗に与える影響2019
- Author(s)
  糸澤孝一,Ricksen Tandryo,村上航介,中村幸介,今西正幸,吉村政志,森勇介
- Organizer
  第2回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-18K14138
[Presentation] Naフラックス法におけるGaN結晶成長速度とＧａ-Na融液電気抵抗の関係2019
- Author(s)
  Ricksen Tandryo,糸澤孝一,村上航介, 北村智子,山田拓海,今西正幸,吉村政志,森勇介
- Organizer
  第2回結晶工学×ISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-18K14138

1. 宇佐美茂佳 (30897947)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
2. 上殿明良 (20213374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
3. 津坂佳幸 (20270473)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 河村貴宏 (80581511)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
5. 富樫理恵 (50444112)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
6. 成塚重弥 (80282680)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 上山智 (10340291)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 丸山隆浩 (30282338)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 森勇介 (90252618)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
10. 中嶋誠

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Imanishi Masayuki 今西 正幸

Research Projects

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Co-Researchers

Naフラックス法における三次元成長モードを活用したデバイスキラー欠陥抑制技術の開発Principal Investigator

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Improvement of hetero epitaxial growth using graphene

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OVPE法による口径拡大・超厚膜GaNインゴット作製技術

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Growth technique of High quality gallium oxide crystal by toxic gas-free OVPE methodPrincipal Investigator

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Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium sourcePrincipal Investigator

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Enlargement of defect-free GaN crystals by the Na-flux methodPrincipal Investigator

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[Journal Article] Influence of oxygen-related defects on the electronic structure of GaN2022

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[Journal Article] "Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method"2022

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[Journal Article] High-rate OVPE-GaN crystal growth at a very high temperature of 1300℃2022

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[Journal Article] Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method2022

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[Journal Article] Activation free energies for formation and dissociation of N-N, C-C, and C-H bonds in a Na-Ga melt2021

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[Journal Article] Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020?cm?32021

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[Journal Article] Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation2021

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[Patent] 金属酸化物結晶の製造方法、金属酸化物エピタキシャル結晶積層基板の製 造方法、半導体装置の製造方法、金属酸化物結晶、金属酸化物エピタキシャル結晶積層基 板、半導体装置、及び金属酸化物結晶製造装置2021

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Imanishi Masayuki 今西正幸

[Patent] 金属酸化物結晶の製造方法、金属酸化物エピタキシャル結晶積層基板の製造方法、半導体装置の製造方法、金属酸化物結晶、金属酸化物エピタキシャル結晶積層基板、半導体装置、及び金属酸化物結晶製造装置2021