Uedono Akira 上殿明良

… Alternative Names

Researcher Number	20213374
Other IDs
External Links
Affiliation (Current)	2019: 筑波大学, 数理物質系, 教授
Affiliation (based on the past Project Information) *help	2016 – 2019: 筑波大学, 数理物質系, 教授 2015: 筑波大学, 数理物質科学研究科(系), 教授 2013: 筑波大学, 数理物質科学研究科, 教授 2012 – 2013: 筑波大学, 数理物質科学研究科(系), 教授 2009 – 2011: 筑波大学, 数理物質科学研究科, 教授 … More
Review Section/Research Field	Principal Investigator Physical properties of metals / Physical properties of metals / Science and Engineering / Electronic materials/Electric materials / 高分子構造・物性(含繊維) Except Principal Investigator Electronic materials/Electric materials / 工業分析化学 / Applied materials / Thin film/Surface and interfacial physical properties / Medium-sized Section 15:Particle-, nuclear-, astro-physics, and related fields / Nuclear engineering / Crystal engineering / Physical properties of metals
Keywords	Principal Investigator 陽電子消滅 / 陽電子 / GaN / 格子欠陥 / 点欠陥 / 欠陥 / 低速陽電子 / 低速陽電子ビーム / 空孔型欠陥 / ZnO … More Except Principal Investigator 陽電子消滅 / 酸化亜鉛 / ヘリコン波励起プラズマスパッタ / ヘリコン波励起プラズマ / 結晶欠陥 / 微小共振器 / 半導体 / 励起子ポラリトン / 励起子 / エピタキシー / polypropylene / 誘電体酸化物 / Helicon-wave-excited-plasma / magnesium zinc oxide / multilayer structures / ラプラス逆変換 / ポラリトンレーザー / エポキシ / ドップラ-広がり / エポキシ樹脂 / 残留応力 / LOW TEMPERATURE IRRADIATION / シリコン酸化膜 / 低温照射 / oーポジトロニウム / Charge Trapping / 量子井戸 / ポリエチレン / Reliability / 水素化アモルファスシリコン / 高分子 / 多層構造 / Oxygen Deficiency / アニーリング / polyvinyl alcohol / distributed Bragg reflector / 電荷捕獲 / 透明導電膜 / ION IRRADIATION / ポジトロニウム / High-k Dielectrics / positron annihilation / イオン照射 / ドーパント / 分光偏光解析 / 2パラメ-タ-測定装置 / 縮退四光波混合 / 酸素欠損 / 電気抵抗測定 / epoxy resin / transparent conducting oxides / a-Si:H/c-Siヘテロ接合太陽電池 / 照射脆化 / 新規評価手法 / ELECTRIC RESISTIVITY MEARUREMENT / 分光エリプソメトリー / ダイヤモンド / 界面微視的構造 / ポリプロピレン / 陽電子 / 結晶シリコン / 酸化マグネシウム亜鉛 / IRRADIATION EMBRITTLEMENT / エピタキシャル成長 / ヘテロ接合太陽電池 / ボイド / 電気・電子材料 / 集積回路 / 分布ブラッグ反射鏡 / 新評価手法確立 / epitaxy / Gate Dielectrics / dielectric oxides / polymer / Silicon Dioxide / ポリビニルアルコ-ル / 圧力容器鋼 / 電子・電気材料 / 伝導機構 / Integrated Circuits / Conduction Mechanism / PRESSURE VESSELE STEEL / polyethylene / ortho-positronium / zinc oxide / ゲート絶縁膜 / 自由体積 / 信頼性 / 高誘電率絶縁膜 / MgZnO / free volume Less

負性電子親和力を利用した高密度ポジトロニウム生成のためのダイヤモンド表面制御Ongoing
- Principal Investigator
  
  田中真伸
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 15:Particle-, nuclear-, astro-physics, and related fields
- Research Institution
  High Energy Accelerator Research Organization
Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilationPrincipal InvestigatorOngoing
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Elucidation of void structure near the interface of a-Si:H/c-Si heterojunctions
- Principal Investigator
  
  Matsuki Nobuyuki
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Kanagawa University
Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operation
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering method
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Study of insulator/Si interfaces and their stress using a monoenergetic positron beamPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
Study of point defects and light-emitting dynamics in group-III nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film quality
- Principal Investigator
  
  YAMABE Kikuo
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methods
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
Study of vacancy-type defects in metal/metal-oxide by means of positron annihilationPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATIONPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  UNIVERSITY OF TSUKUBA
低速陽電子線を用いた高温熱平衡状態におけるSiの点欠陥挙動解析Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
陽電子消滅を用いた高分子の分子構造の研究Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  高分子構造・物性(含繊維)
- Research Institution
  University of Tsukuba
ポジトロンを用いたシリコンの空孔-酸素複合体の研究Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
半導体の融点直下に於ける熱平衡欠陥の研究Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
Development of a pulshed monoenergetic positron beam linePrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
陽電子消滅法による半導体中の結晶欠陥の研究
- Principal Investigator
  
  堂山昌男
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  Teikyo University of Science & Technology
陽電子による半導体中の結晶欠陥及びドーパント状態の研究
- Principal Investigator
  
  堂山昌男
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Teikyo University of Science & Technology
APPLICATION OF ION IRRADIATION FOR MECHANISTIC STUDY ON NEUTRON IRRADIATION EMBRITTLEMENT IN STEELS
- Principal Investigator
  
  ISHINO Shiori
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Nuclear engineering
- Research Institution
  THE UNIVERSITY OF TOKYO
Analysis of thermal transition of polymers by positron annihilation.
- Principal Investigator
  
  UJIHIRA Yusuki
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  工業分析化学
- Research Institution
  The University of Tokyo

All 2018 2017 2016 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation Book

[Book] Advances in Light Emitting Materials, edited by B. Monemar and H. Grimmeiss, (edited by B. Monemar and H. Grimmeiss), (Impact of Point Defects on the Luminescence Properties of (Al,Ga)N)2008
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck and S. Nakamura
- Total Pages
  278
- Publisher
  Stafa-Zuerich
- Data Source
  KAKENHI-PLANNED-18069001
[Book] Advances in Light Emitting Materials(edited by B. Monemar and H.Grimmeiss)("Impact of Point Defects on the Luminescence Properties of (Al,Ga)N", Materials Science Forum 590, pp.233-248(2008) ISBN0-87849-358-1 ISBN-13978-087849-358-6)2008
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, S.P.DenBaars, U.K.Mishra, J.S.Speck, S.Nakamura
- Total Pages
  278
- Publisher
  Trans Tech Publications, Stafa-Zuerich
- Data Source
  KAKENHI-PLANNED-18069001
[Book] IEEE 2005 Int.Reliability Physics Symposium Proceeding2005
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Publisher
  Charge Trapping by Oxygen-Related Defects in HfO2-based High-k Gate Dielectrics
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Book] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics, IEEE 2005 Int.Reliability Physics Symposium Proceeding
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] AlN metal-semiconductor field-effect transistors using Si-ion implantation2018
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, Y. Zhang, D. Piedra, and T. Palacios
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- Int'l Joint Research / Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy2018
- Author(s)
  M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, and T. Honda
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 2 Pages: 021002-021002
- DOI
  10.7567/apex.11.021002
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation2017
- Author(s)
  Uedono Akira、Imanishi Masayuki、Imade Mamoru、Yoshimura Masashi、Ishibashi Shoji、Sumiya Masatomo、Mori Yusuke
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 475 Pages: 261-265
- DOI
  10.1016/j.jcrysgro.2017.06.027
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams2017
- Author(s)
  Uedono Akira、Takashima Shinya、Edo Masaharu、Ueno Katsunori、Matsuyama Hideaki、Egger Werner、Koschine Tonjes、Hugenschmidt Christoph、Dickmann Marcel、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 2017 Pages: 1700521-1700521
- DOI
  10.1002/pssb.201700521
- Int'l Joint Research / Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams2017
- Author(s)
  Uedono Akira、Tanaka Taketoshi、Ito Norikazu、Nakahara Ken、Egger Werner、Hugenschmidt Christoph、Ishibashi Shoji、Sumiya Masatomo
- Journal Title
  
  Thin Solid Films
  
  Volume: 639 Pages: 78-83
- DOI
  10.1016/j.tsf.2017.08.021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements2013
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, and Z. Sitar
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Pages: 1421031-5
- DOI
  10.1063/1.4823826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu,K. Hiramatsu, A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Pages: 213-213
- DOI
  10.1063/1.4807906
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-24560010
[Journal Article] Time-resolved luminescence studies on AlN and high AlN mole fractionAlGaN alloys2013
- Author(s)
  S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 10 Pages: 501-506
- DOI
  10.1002/pssc.201200676
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 50 Pages: 1-8
- DOI
  10.1149/05042.0001ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, and A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol.113,No.21 Pages: 2135061-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam2012
- Author(s)
  A.Uedono, S.Ishibashi, K.Tenjinbayashi, T.Tsutsui, K.Nakahara, D.Takamizu, S.F.Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 111 Pages: 0145081-6
- DOI
  10.1063/1.3675516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Major impacts of point defects and impurities on the carrier recombination dynamics in AlN2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, A.Uedono
- Journal Title
  
  Appl.Phys.Lett. 97
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions2011
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono
- Journal Title
  
  Applied Physics Letters
  
  Volume: 99 Pages: 0519021-3
- DOI
  10.1063/1.3615681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] Application of positron annihilation technique to front and backend processes for modern LSI devices2011
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  J.Phys. : Conf.Ser.
  
  Volume: 262
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy2010
- Author(s)
  T.Onuma, A.Uedono, H.Asamizu, H.Sato, J.F.Kaeding, M.Iza, S.P.DenBaars, S.Nakamura, S.F.Chichibu
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Proc.of 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  
  Pages: 1498-1501
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅法を用いた材料解析-材料不良解析への応用-2010
- Author(s)
  上殿明良
- Journal Title
  
  SDM2009 190
  
  Pages: 49-52
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu配線の欠陥評価2010
- Author(s)
  上殿明良, 他
- Journal Title
  
  電子デバイスにおける原子輸送・応力問題第15回研究会予稿集
  
  Pages: 31-34
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Proc.13th IEEE Int.Interconnect Tech.Conf.
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅の基礎と最先端2010
- Author(s)
  上殿明良, 他
- Journal Title
  
  応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト
  
  Pages: 1-8
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Epitaxial DyScO_3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO32010
- Author(s)
  G.Yuan, K.Nishio, M.Lippmaa, A.Uedono
- Journal Title
  
  J.Phys.D : Appl.Phys. 43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN2010
- Author(s)
  S.Chen, A.Uedono, S.Ishibashi, S.Tomita, H.Kudo, K.Akimoto
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Identification of extremely radiative nature of AlN by time-resolved photoluminescence2010
- Author(s)
  T.Onuma, K.Hazu, A.Uedono, T.Sota, S.F.Chichibu
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Proc.2010 Int.Workshop on Junction Technology Extended Abstracts
  
  Pages: 149-154
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam2010
- Author(s)
  A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅の基礎と最先端2010
- Author(s)
  上殿明良, 他
- Journal Title
  
  応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト
  
  Pages: 1-8
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] 陽電子消滅の基礎と最先端2010
- Author(s)
  上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
- Journal Title
  
  応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam2009
- Author(s)
  K.Yamanaka, A.Uedono
- Journal Title
  
  Scripta Materialia 61
  
  Pages: 8-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] III族窒化物半導体(Al, Ga)Nにおける発光特性と点欠陥の相関関係2009
- Author(s)
  秩父重英, 上殿明良
- Journal Title
  
  日本結晶成長学会誌(総合報告)
  
  Volume: 36 Pages: 166-177
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams2009
- Author(s)
  A. Uedono, N. Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, M. Yoshimaru, N. Oshima, T. Ohdaira, R. Suzuki
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
- Author(s)
  R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, K. Yamabe
- Journal Title
  
  Proc. IEEE Int. Electron Device Meeting (IEDM)
  
  Pages: 131-134
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams2009
- Author(s)
  上殿明良, et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Journal Title
  
  Proc.12tn IEEE 2009 Int.Interconnect Tech.
  
  Pages: 75-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  上殿明良, et al.
- Journal Title
  
  Proc.12tn IEEE 2009 Int.Interconnect Tech. 12
  
  Pages: 75-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  A. Uedono, N. Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, M. Yoshimaru, N. Oshima, T. Ohdaira, R. Suzuki
- Journal Title
  
  Proc. 12tn IEEE 2009 Int. Interconnect Tech.
  
  Pages: 75-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation2009
- Author(s)
  上殿明良
- Journal Title
  
  J. Appl. Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] 陽電子消滅による窒化物光半導体の点欠陥の評価2009
- Author(s)
  上殿明良
- Journal Title
  
  日本結晶成長学会誌(総合報告)
  
  Volume: 36 Pages: 155-165
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009
- Author(s)
  T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono and S. F. Chichibu
- Journal Title
  
  J. App. Phys 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Point defects in group-III nitride semiconductors studied by positron annihilation2009
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  J.Crystal Growth
  
  Volume: 311 Pages: 3075-3079
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation m2009
- Author(s)
  上殿明良
- Journal Title
  
  J. Appl. Phys 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009
- Author(s)
  A.Uedono, H.Nakamori, K.Narita, J.Suzuki, X.Wang, S.-B.Che, Y.Ishitani, A.Yoshikawa, S.Ishibashi
- Journal Title
  
  J.App.Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Journal Title
  
  Proc.IEEE Int.Electron Device Meeting (IEDM)
  
  Pages: 131-134
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams2009
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Positron annihilation study on defects in HfSiON films deposited byelectron-beam evaporation2009
- Author(s)
  G.Yuan, X.Lu, H.Ishiwara, A.Uedono
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009
- Author(s)
  A. Uedono, H. Nakamori, K. Narita, and J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa and S. Ishibashi
- Journal Title
  
  J. App. Phys 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009
- Author(s)
  T.Onuma, T.Shibata, K.Kosaka, K.Asai, S.Sumiya, M.Tanaka, T.Sota, A.Uedono, S.F.Chichibu
- Journal Title
  
  J.App.Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008
- Author(s)
  A.Uedono, C.Shaoqiang, S.Jongwon, K.Ito, H.Nakamori, N.Honda, S.Tomita, K.Akimoto, H.Kudo, S.Ishibashi
- Journal Title
  
  J.App.Phys. 103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008
- Author(s)
  上殿明良
- Journal Title
  
  J. Appl. Phys. 103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008
- Author(s)
  A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo and S. Ishibashi
- Journal Title
  
  J. App. Phys 103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sot
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams2007
- Author(s)
  A. Uedono
- Journal Title
  
  J. App. Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams2007
- Author(s)
  A.Uedono
- Journal Title
  
  J. App. Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.Denbaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams2007
- Author(s)
  A. Uedono
- Journal Title
  
  J. Appl. Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006
- Author(s)
  S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
- Journal Title
  
  Journal of Applied Physics 99 (9)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Impact of nitridation on open volumes in HfSiO_x studied using monoenergetic positron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Yamabe, K.Eguchi, M.Takayanagi, T.Odaira, M.Marumatsu, R.Suzuki, A.S.Hamid, T.Chikyow
- Journal Title
  
  Appl. Phys. Lett. 88
  
  Pages: 171912-171912
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Impact of nitridation on open volumes in HfSiO_x studied using monoenergetic positron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Yamabe, K.Eguchi, M.Takayanagi, T.Odaira, M.Marumatsu, R.Suzuki, A.S.Hamid, T.Chikyow
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 171912-171912
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006
- Author(s)
  S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
- Journal Title
  
  Journal of Applied Physics 99(9)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] 低速陽電子ビームを用いたhigh-k膜の空隙評価2005
- Author(s)
  上殿明良ほか
- Journal Title
  
  表面科学 26
  
  Pages: 268-273
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.yamabe
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.Yamabe
- Journal Title
  
  Journal of Applied Physics 97
  
  Pages: 33508-33508
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of open spaces in high-k materials by monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Surface Science 26
  
  Pages: 268-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J. Appl. Phys. 99
  
  Pages: 54507-54507
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Exciton-polariton spectra and limiting factors for the room temperature photoluminescence efficiency in ZnO2005
- Author(s)
  Chichibu, Uedono, Tsukazaki, Onuma, Zamfirescu, Ohtomo, Kavokin, Cantwell, Litton, Sota, Kawasaki
- Journal Title
  
  Semiconductor Science and Technology (4月出版)
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Annealing properties of open volumes in HfSiO_x and HfAlO_x gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J. Appl. Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing Properties of Open Volumes in HfSiO_x and HfAlO_x gate dielectrics Studied Using Monoenergetic Positron Beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] 陽電子による先端半導体材料の評価2005
- Author(s)
  上殿明良ほか
- Journal Title
  
  応用物理 74
  
  Pages: 1223-1226
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
- Journal Title
  
  Semiconductor Science and Technology 20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Characterization of advanced semiconductor materials by positron annihilation2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Ouyoubutsuri 74
  
  Pages: 1223-1226
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23508-23508
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Exeiton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
- Journal Title
  
  Semiconductor Science and Technology 20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J. Appl. Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing properties of open volumes in HfSiOx arid HfAlOx gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono, K.Ikeuchi, K.Yamabe, T.Ohdaira, M.Muramatsu, R.Suzuki, A.S.Hamid, T.Chikyow, K.Torii, K.Yamada
- Journal Title
  
  J.Appl.Phys. 98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.Yamabe
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Vacancy-type defects in wide-gap semiconductors probed by positron annihilation2005
- Author(s)
  A.Uedono, S.F.Chichibu
- Journal Title
  
  Extended Abstracts of 24th Electronic Materials Symposium 24
  
  Pages: 333-334
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono, K.Ikeuchi, K.Yamabe, T.Ohdaira, M.Muramatsu, R.Suzuki, A.S.Hamid, T.Chikyow, K.Torii, K.Yamada
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 99
  
  Pages: 54507-54507
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Defects Introduced Into Electroplated Cu Films During Room-Temperature Recrystallization Probed by a Monoenergetic Positron Beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing properties of open volumes in HfSiO_x and HfAlO_x gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Jpn.J.Appl.Phys. 43(11B)
  
  Pages: 7848-7852
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Point defects in thin HfAlO_x films probed by monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. 786
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Characterization of HfO.3A1O.70x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Japanese Journal of Applied Physics 43(11B)
  
  Pages: 7848-7852
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Vacancy-Type Defects in SrTiO_3 Probed by a Monoenergetic Positron Beam2004
- Author(s)
  A.Uedono, M.Kiyohara, K.Shimoyama, Y.Matsunaga, N.Yasui, K.Yamabe
- Journal Title
  
  Materials Sci.Forum 445-446
  
  Pages: 201-203
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.-.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85 (23)
  
  Pages: 5586-5588
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Characterizing metal-oxide-semiconductor structures consisting of HfSiO_x as gate dielectrics using monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 1254-1259
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7848-7848
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x fabricated by atomic-layer-deposition technique using monoenergetic positron beam2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 43
  
  Pages: 7848-7852
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x fabricated by atomic-layer-deposition technique using monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 7848-7852
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterizing metal-oxide-semiconductor structures consisting of HfSiO_x as gate dielectrics using monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 43
  
  Pages: 1254-1259
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of the Transient Current of MOS Consisting of HfAlO_x as Gate Dielectrics Studied by Positron Annihilation2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28, 2004, Tokyo, Japan
  
  Pages: 120-123
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Vacancy-Type Defects in SrTiO_3 Probed by a Monoenergetic Positron Beam2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Materials Science Forum 445-446
  
  Pages: 201-203
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Point defects in thin HfAlO_x films probed by monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Mat. Res. Soc. Symp. Proc. 786
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Journal Title
  
  IEEE 2005 Int.Reliability Physics Symposium Proceeding
  
  Pages: 648-649
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Presentation] Mgイオン注入N極性面GaNの時間分解フォトルミネッセンス評価2018
- Author(s)
  嶋紘平, 井口紘子, 成田哲生, 片岡恵太, 上殿明良, 小島一信, 秩父重英
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018
- Author(s)
  角谷正友, 福田清貴，上田茂典, 浅井祐哉, Cho Yujin, 関口隆史, 上殿明良, 尾沼猛儀, Sang Liwen, 本田徹
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 陽電子消滅による窒化物半導体中0次元特異構造（点欠陥）のキャリア捕獲の評価2018
- Author(s)
  上殿明良，石橋章司，角谷正友
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Carrier trapping by vacancy-type defects in group-III nitrides studied by means of positron annihilation2018
- Author(s)
  A. Uedono, M. Sumiya, and S. Ishibashi
- Organizer
  Third DAE-BRNS Trombay Positron Meeting
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Mg イオン注入GaN MOSFET のチャネル特性向上2018
- Author(s)
  高島信也，田中亮，上野勝典，松山秀昭，江戸雅晴, 小島一信, 秩父重英, 上殿明良, 中川清和
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Theoretical Calculation of Positron Annihilation Parameters in Group-III nitrides2017
- Author(s)
  S. Ishibashi and A. Uedono
- Organizer
  29th Int. Conf. Defects in Semiconductors, Matsue
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Theoretical calculation of positron annihilation parameters for defects in UV materials (AlN, ZnO, Ga2O3)2017
- Author(s)
  S. Ishibashi and A. Uedono
- Organizer
  Int. Workshop on UV Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, T. Palacios
- Organizer
  2017 Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, and T. Palacios
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Study of point defects in nitrides and oxides by means of positron annihilation2017
- Author(s)
  A. Uedono
- Organizer
  5th Int. Conf. on Light-Emitting Devices and Their Industrial Applications
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Role of point defects on the luminescent properties of epitaxial and ion-implanted Mg-doped GaN fabricated on a GaN substrate2017
- Author(s)
  S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
- Organizer
  12th Int. Conf. Nitride Semiconductors, Strasbourg Convention Center
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures2017
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  11th Int. Sym. Semiconductor on Light Emitting Devices
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] GaN基板上Mg添加GaNの時間分解フォトルミネッセンス評価2017
- Author(s)
  秩父重英，小島一信，嶋紘平，高島信也，江戸雅晴，上野勝典，石橋章司，上殿明良
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 窒化物半導体合金中の陽イオン空孔における局所構造と陽電子消滅パラメータの間の相関の計算科学的研究2016
- Author(s)
  石橋章司、上殿明良、木野日織、三宅隆、寺倉清之
- Organizer
  平成28年度京都大学原子炉実験所専門研究会
- Place of Presentation
  京都大学原子炉実験所（大阪府泉南郡）
- Year and Date
  2016-12-08
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors2013
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  京都
- Year and Date
  2013-09-17
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英,羽豆耕治,石川陽一,古澤健太郎,上殿明良
- Organizer
  2012年春季応用物理学会シンポジウム
- Place of Presentation
  東京(依頼講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 高AlNモル分率AlGaN混晶薄膜の時間分解PL/CL評価2012
- Author(s)
  秩父重英, 羽豆耕治, 尾沼猛儀, 上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Si添加Al_<0.6>Ga_<0.4>N混晶薄膜の時間分解フォトルミネッセンス評価2012
- Author(s)
  羽豆耕治, 石川陽一, 田代公則, 三宅秀人, 平松和政, 上殿明良, 秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英, 羽豆耕治, 石川陽一, 古澤健太郎, 上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都(シンポジウム招待)(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Identification of extremely radiative nature of AlN by time-resolved photoluminescence and time-resolved cathodoluminescence measurements2011
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono, T.Sota
- Organizer
  SPIE Photonics West California
- Place of Presentation
  USA
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono, S.Ishibashi, S.F.Chichibu, K.Akimoto
- Organizer
  SPIE Photonics West California
- Place of Presentation
  USA
- Year and Date
  2011-01-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, T.Sota, A.Uedono
- Organizer
  European Materials Research Society, 2011 Spring Meeting
- Place of Presentation
  Nice, France(招待)(招待講演)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono
- Organizer
  SPIE Photonics West
- Place of Presentation
  California, USA(招待講演)
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, T.Sota, A.Uedono
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] AlNエピタキシャル薄膜の発光寿命と点欠陥他の関係について2011
- Author(s)
  秩父重英, 羽豆耕治, 尾沼猛儀, 上殿明良
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono, et al.
- Organizer
  SPIE Photonics West
- Place of Presentation
  California, USA(招待講演)
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
- Author(s)
  A.Uedono
- Organizer
  10th Int.Workshop on Junction Technology
- Place of Presentation
  Shanghai, China(招待講演)
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良
- Organizer
  第15回結晶工学セミナー
- Place of Presentation
  学習院大学(招待講演)
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation2010
- Author(s)
  A.Uedono, S.Ishibashi, N.Oshima, T.Ohdaira, R.Suzuki
- Organizer
  2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-02
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation2010
- Author(s)
  A.Uedono
- Organizer
  10th IEEE International Conference on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China(招待講演)
- Year and Date
  2010-11-02
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] AlN及び高AlNモル分率AlxGa1・xNエピタキシャル層の時間分解分光計測2010
- Author(s)
  秩父重英, 尾沼猛儀, 羽豆耕治, 上殿明良, 宗田孝之
- Organizer
  応用物理学会応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用」
- Place of Presentation
  大阪大学吹田キャンパス
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子消滅によるAlGaN中の欠陥評価2010
- Author(s)
  上殿明良, 三宅秀人, 平松和政, 石橋章司
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良
- Organizer
  第15回結晶工学セミナー
- Place of Presentation
  学習院大学(招待講演)
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良
- Organizer
  応用物理学会薄膜・表面物理分科会
- Place of Presentation
  名城大学(招待講演)
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Degradation in HfSiON film induced by electrical stress application2010
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Organizer
  217th Electrochemical Society Meeting
- Place of Presentation
  Hyatt Regency Vancouver and The Fairmont Hotel Vancouver, Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Application of positron annihilation technique to front and backend processes for modern LSI devices2010
- Author(s)
  A.Uedono, S.Ishibashi, N.Oshima, T.Ohdaira, R Suzuki
- Organizer
  12th Int.Workshop on Slow Positron Beam Technique
- Place of Presentation
  Magnetic Island, State of Queensland, Australia
- Year and Date
  2010-08-01
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良,石橋章司,大島永康,大平俊行,鈴木良一
- Organizer
  第15回結晶工学セミナー「物理・化学分析の最先端技術を基礎から理解する」-究極の分析を目指して-
- Place of Presentation
  東京学習院大学
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
- Author(s)
  A.Uedono
- Organizer
  2010 IEEE Int.Interconnect Technology Conf.
- Place of Presentation
  California, USA
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Application of positron annihilation technique to front and backend processes for modern LSI devices2010
- Author(s)
  A.Uedono
- Organizer
  12th Int.Workshop on Slow Positron Beam Technique
- Place of Presentation
  Magnetic Island, State of Queensland, Australia(招待講演)
- Year and Date
  2010-08-01
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu配線の欠陥評価2010
- Author(s)
  上殿明良
- Organizer
  第15回電子デバイスにおける原子輸送・応力問題研究会
- Place of Presentation
  白山ハイテクパーク(招待講演)
- Year and Date
  2010-07-23
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2010
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, T.Sota, A.Uedono
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
- Author(s)
  A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, K.Tenjinbayashi1, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
- Organizer
  10th Int.Workshop on Junction Technology
- Place of Presentation
  FuXuan Hotel at Fundan University, FuXuan Hotel, Shanghai, China
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良
- Organizer
  応用物理学会薄膜・表面物理分科会
- Place of Presentation
  名城大学(招待講演)
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
- Organizer
  応用物理学会
- Place of Presentation
  名城大学
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
- Organizer
  第15回結晶工学セミナー
- Place of Presentation
  学習院大学
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出2010
- Author(s)
  上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
- Organizer
  配線・実装技術と関連材料技術,
- Place of Presentation
  機械振興会館東京
- Year and Date
  2010-02-05
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出2010
- Author(s)
  上殿明良, 井上尚也, 林喜宏, 江口和弘, 中村友二, 廣瀬幸範, 吉丸正樹, 大島永康, 大平俊行, 鈴木良一
- Organizer
  配線・実装技術と関連材料技術
- Place of Presentation
  機械振興会館東京
- Year and Date
  2010-02-05
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅によるAlGaN中の欠陥評価2010
- Author(s)
  上殿明良
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu 配線の欠陥評価2010
- Author(s)
  上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
- Organizer
  第15回電子デバイスにおける原子輸送・応力問題研究会
- Place of Presentation
  横浜市白山ハイテクパーク
- Year and Date
  2010-07-23
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅によるAIGaN中の欠陥評価2010
- Author(s)
  上殿明良
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Structure-modification model of porogen-based porous SiOC film with UV curing2010
- Author(s)
  Y.Oka, A.Uedono, K.Goto, Y.Hirose, M.Matsuura, M.Fujisawa, K.Asai
- Organizer
  Advanced Metallization Conference 2010
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-10-20
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良,石橋章司,大島永康,大平俊行,鈴木良一
- Organizer
  応用物理学会薄膜・表面物理分科会第11回「イオンビームによる表面・界面解析」特別研究会
- Place of Presentation
  名古屋名城大学
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Organizer
  2010 IEEE Int.Interconnect Technology Conf.
- Place of Presentation
  Hyatt Regency San Francisco Airport Hotel, Burlingame, California, USA
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration2009
- Author(s)
  N.Asami, T.Owada, S.Akiyama, N.Ohara, Y.Iba, T.Kouno, H.Kudo, S.Takesako, T.Osada, T.Kirimura, H.Watatani, A.Uedono, Y.Nara, M.Kase
- Organizer
  12tn IEEE 2009 Int.Interconnect Tech.
- Place of Presentation
  Royton Sapporo Hotel, Hokkaido, Japan
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Organizer
  12tn IEEE 2009 Int.Interconnect Tech.
- Place of Presentation
  Royton Sapporo Hotel, Hokkaido, Japan
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  上殿明良, et al.
- Organizer
  12tn IEEE 2009 Int.Interconnect Tech.
- Place of Presentation
  Royton Sapporo Hotel Hokkaido
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅法を用いた材料解析-材料不良解析への応用-2009
- Author(s)
  上殿明良
- Organizer
  X線分析研究懇談会
- Place of Presentation
  大阪市立大学(大阪府大阪市)(招待講演)
- Year and Date
  2009-11-05
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Theoretical calculations of positron states and annihilation parameters in group-III nitride semiconductors2009
- Author(s)
  S.Ishibashi, A.Uedono
- Organizer
  25th International Conference on Defects in Semiconductors
- Place of Presentation
  St Petersburg, Russia
- Year and Date
  2009-06-20
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子消滅法を用いた材料解析-材料不良解析への応用-2009
- Author(s)
  上殿明良
- Organizer
  X線分析研究懇談会
- Place of Presentation
  大阪市立大学
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Organizer
  2009 IEEE Int.Electron Devices Meeting
- Place of Presentation
  Hilton Baltimore, Baltimore, MD, USA
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N2008
- Author(s)
  S. F. Chichibu, T. Onuma, and A. Uedono
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Point defects in group-III nitride semiconductors studied by positron annihilation2008
- Author(s)
  A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki
- Organizer
  The 2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-06
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子を用いたIII族窒化物半導体の点欠陥の研究2008
- Author(s)
  上殿明良
- Organizer
  特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
- Place of Presentation
  学士会館(東京)
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Raditive and nonradiative processes in (Al,In,Ga)N alloy films2007
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota
- Organizer
  14th Semiconducting and Insulating Materials Conference
- Place of Presentation
  Fayetteville, Arkansas, USA
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子消滅を用いた窒化物光半導体の空孔型欠陥の検出2007
- Author(s)
  上殿明良・秩父重英
- Organizer
  応用物理学会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Effects of Si-doping on the recombination dynamics of excitons in AlGaN alloys studied by time-resolved cathodoluminescence
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Hazu, K. Furusawa, K. Hiramatsu, A. Uedono
- Organizer
  European Materials Research Society, 2013 Spring Meeting, Session L: Group III nitrides
- Place of Presentation
  Strasbourg, France
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  The 39th International Symposium on Compound Semiconductors (ISCS 2012)
- Place of Presentation
  Santa Barbara, CA, USA
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Impacts of point defects on the photoluminescence lifetime of Si-doped Al0.6Ga0.4N epilayers grown on an AlN template
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 「ワイドバンドギャップ窒化物・酸化物半導体の発光寿命と点欠陥の関係」
- Author(s)
  秩父重英,上殿明良
- Organizer
  ワイドギャップ半導体光・電子デバイス162委員会 10月定期研究会
- Place of Presentation
  名城大学
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Effects of Si-doping on the near-band-edge emission dynamics of Al0.6Ga0.4N epilayers grown on AlN templates by metalorganic vapor phase epitaxy
- Author(s)
  S. F. Chichibu, H. Miyake, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hiramatsu, A. Uedono
- Organizer
  The IUMRS International Conference in Asia 2013 (IUMRS-ICA-2013)
- Place of Presentation
  Bangalore, India
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] III-V族窒化物半導体の欠陥評価最前線
- Author(s)
  秩父重英,上殿明良
- Organizer
  応用物理学会　シリコンテクノロジー分科会第148回研究集会
- Place of Presentation
  グランキューブ大阪（大阪国際会議場）
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), ECS222nd
- Place of Presentation
  Hawaii, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  The Fourth International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-22246037

1. CHICHIBU Shigefusa (80266907)

# of Collaborated Projects: 5 results

# of Collaborated Products: 53 results
2. SOTA Takayuki (90171371)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
3. SUGIYAMA Mutsumi (40385521)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. YAMABE Kikuo (10272171)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
5. 堂山昌男 (40010748)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. 大島永康 (00391889)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. OSHIYAMA Atsushi (80143361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. UCHIDA Kazuyuki (10393810)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. HAZU Kouji (30367057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
11. FURUSAWA Kentaro (40392104)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
12. UJIHIRA Yusuki (40010805)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. NOMURA Kiyosi (40124680)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. ISHINO Shiori (70010733)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. KAWANISHI Hiroshi (40010970)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. SEKIMURA Naoto (10183055)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. AKIMOTO Katsuhiro (90251040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. SUEMASU Takashi (40282339)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. Matsuki Nobuyuki (30373450)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. ORourke Brian (60586551)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 角谷正友 (20293607)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
23. 石橋章司 (30356448)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
24. 奥村宏典 (80756750)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
25. 田中真伸 (00222117)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. KOBAYASI Yosinori

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. TUKAMOTO Tetsuo

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. 三宅秀人

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
29. 平松和政

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
30. 小島一信

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Uedono Akira 上殿 明良

上殿 明良 ウエドノ アキラ

UEDONO Akira 上殿 明良

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負性電子親和力を利用した高密度ポジトロニウム生成のためのダイヤモンド表面制御Ongoing

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Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilationPrincipal InvestigatorOngoing

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Study of insulator/Si interfaces and their stress using a monoenergetic positron beamPrincipal Investigator

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Study of point defects and light-emitting dynamics in group-III nitride semiconductorsPrincipal Investigator

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Study of vacancy-type defects in metal/metal-oxide by means of positron annihilationPrincipal Investigator

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STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATIONPrincipal Investigator

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低速陽電子線を用いた高温熱平衡状態におけるSiの点欠陥挙動解析Principal Investigator

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陽電子消滅を用いた高分子の分子構造の研究Principal Investigator

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ポジトロンを用いたシリコンの空孔-酸素複合体の研究Principal Investigator

Uedono Akira 上殿明良

上殿明良ウエドノアキラ

UEDONO Akira 上殿明良