Uedono Akira 上殿明良

… Alternative Names

Researcher Number	20213374
Other IDs
External Links
Affiliation (Current)	2020: 筑波大学, 数理物質系, 教授
Affiliation (based on the past Project Information) *help	2016 – 2020: 筑波大学, 数理物質系, 教授 2015: 筑波大学, 数理物質科学研究科(系), 教授 2013: 筑波大学, 数理物質科学研究科, 教授 2012 – 2013: 筑波大学, 数理物質科学研究科(系), 教授 2009 – 2011: 筑波大学, 数理物質科学研究科, 教授 … More
Review Section/Research Field	Principal Investigator Physical properties of metals / Science and Engineering / Physical properties of metals / 高分子構造・物性(含繊維) / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Applied materials / Physical properties of metals / 工業分析化学 / Nuclear engineering … More
Keywords	Principal Investigator 陽電子消滅 / 陽電子 / 格子欠陥 / 点欠陥 / GaN / 欠陥 / 低速陽電子ビーム / 低速陽電子 / ZnO / 空孔型欠陥 … More Except Principal Investigator 陽電子消滅 / 酸化亜鉛 / 半導体 / 結晶欠陥 / 微小共振器 / 励起子 / 励起子ポラリトン / エピタキシー / ヘリコン波励起プラズマ / ヘリコン波励起プラズマスパッタ / GaN / OVPE / ドーパント / 陽電子 / 電気・電子材料 / 電子・電気材料 / ポラリトンレーザー / 縮退四光波混合 / 2パラメ-タ-測定装置 / 自由体積 / ポリエチレン / ポリプロピレン / 残留応力 / エポキシ樹脂 / ポリビニルアルコ-ル / ラプラス逆変換 / 高分子 / エポキシ / ドップラ-広がり / oーポジトロニウム / positron annihilation / ortho-positronium / free volume / polymer / polyethylene / polyvinyl alcohol / epoxy resin / polypropylene / 圧力容器鋼 / 照射脆化 / イオン照射 / 低温照射 / 電気抵抗測定 / アニーリング / PRESSURE VESSELE STEEL / IRRADIATION EMBRITTLEMENT / ION IRRADIATION / LOW TEMPERATURE IRRADIATION / ELECTRIC RESISTIVITY MEARUREMENT / 高誘電率絶縁膜 / 集積回路 / ゲート絶縁膜 / 伝導機構 / 電荷捕獲 / 信頼性 / シリコン酸化膜 / 酸素欠損 / High-k Dielectrics / Integrated Circuits / Gate Dielectrics / Conduction Mechanism / Charge Trapping / Reliability / Silicon Dioxide / Oxygen Deficiency / 誘電体酸化物 / 透明導電膜 / 分布ブラッグ反射鏡 / エピタキシャル成長 / 多層構造 / MgZnO / 酸化マグネシウム亜鉛 / 量子井戸 / Helicon-wave-excited-plasma / zinc oxide / dielectric oxides / transparent conducting oxides / distributed Bragg reflector / epitaxy / multilayer structures / magnesium zinc oxide / a-Si:H/c-Siヘテロ接合太陽電池 / 水素化アモルファスシリコン / ボイド / 新規評価手法 / a-Si:H/c-Siヘテロ接合 / 分光エリプソメトリー / Siヘテロ接合太陽電池 / 結晶シリコン / ヘテロ接合太陽電池 / 界面微視的構造 / 分光偏光解析 / 新評価手法確立 / 気相成長 / 低抵抗 / 低転位 / ダイヤモンド / BEC / Ps / ポジトロニウム Less

Growth of a thick GaN crystal with extremely low resistivity by the OVPE methodOngoing
- Principal Investigator
  
  森勇介
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium sourceOngoing
- Principal Investigator
  
  今西正幸
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka University
負性電子親和力を利用した高密度ポジトロニウム生成のためのダイヤモンド表面制御Ongoing
- Principal Investigator
  
  田中真伸
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 15:Particle-, nuclear-, astro-physics, and related fields
- Research Institution
  High Energy Accelerator Research Organization
Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilationPrincipal InvestigatorOngoing
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Elucidation of void structure near the interface of a-Si:H/c-Si heterojunctions
- Principal Investigator
  
  Matsuki Nobuyuki
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Kanagawa University
Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operation
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering method
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Study of insulator/Si interfaces and their stress using a monoenergetic positron beamPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
Study of point defects and light-emitting dynamics in group-III nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film quality
- Principal Investigator
  
  YAMABE Kikuo
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methods
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
Study of vacancy-type defects in metal/metal-oxide by means of positron annihilationPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATIONPrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  UNIVERSITY OF TSUKUBA
低速陽電子線を用いた高温熱平衡状態におけるSiの点欠陥挙動解析Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
陽電子消滅を用いた高分子の分子構造の研究Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  高分子構造・物性(含繊維)
- Research Institution
  University of Tsukuba
ポジトロンを用いたシリコンの空孔-酸素複合体の研究Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
半導体の融点直下に於ける熱平衡欠陥の研究Principal Investigator
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
Development of a pulshed monoenergetic positron beam linePrincipal Investigator
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
陽電子消滅法による半導体中の結晶欠陥の研究
- Principal Investigator
  
  堂山昌男
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  Teikyo University of Science & Technology
陽電子による半導体中の結晶欠陥及びドーパント状態の研究
- Principal Investigator
  
  堂山昌男
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Teikyo University of Science & Technology
APPLICATION OF ION IRRADIATION FOR MECHANISTIC STUDY ON NEUTRON IRRADIATION EMBRITTLEMENT IN STEELS
- Principal Investigator
  
  ISHINO Shiori
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  Nuclear engineering
- Research Institution
  THE UNIVERSITY OF TOKYO
Analysis of thermal transition of polymers by positron annihilation.
- Principal Investigator
  
  UJIHIRA Yusuki
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  工業分析化学
- Research Institution
  The University of Tokyo

[Book] Advances in Light Emitting Materials(edited by B. Monemar and H.Grimmeiss)("Impact of Point Defects on the Luminescence Properties of (Al,Ga)N", Materials Science Forum 590, pp.233-248(2008) ISBN0-87849-358-1 ISBN-13978-087849-358-6)2008
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, S.P.DenBaars, U.K.Mishra, J.S.Speck, S.Nakamura
- Total Pages
  278
- Publisher
  Trans Tech Publications, Stafa-Zuerich
- Data Source
  KAKENHI-PLANNED-18069001
[Book] Advances in Light Emitting Materials, edited by B. Monemar and H. Grimmeiss, (edited by B. Monemar and H. Grimmeiss), (Impact of Point Defects on the Luminescence Properties of (Al,Ga)N)2008
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck and S. Nakamura
- Total Pages
  278
- Publisher
  Stafa-Zuerich
- Data Source
  KAKENHI-PLANNED-18069001
[Book] IEEE 2005 Int.Reliability Physics Symposium Proceeding2005
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Publisher
  Charge Trapping by Oxygen-Related Defects in HfO2-based High-k Gate Dielectrics
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Book] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics, IEEE 2005 Int.Reliability Physics Symposium Proceeding
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Impact of defects on the electrical properties of p-n diodes formed by implanting Mg and H ions into N-polar GaN2019
- Author(s)
  H. Iguchi, T. Narita, K. Kataoka, M. Kanechika, and A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Pages: 125102-125102
- DOI
  10.1063/1.5116886
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Annealing behavior of vacancy-type defects in Mg- and H-implanted GaN studied using monoenergetic positron beams2019
- Author(s)
  Uedono Akira、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Shima Kohei、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 256 Pages: 19001041-12
- DOI
  10.1002/pssb.201900104
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Characterization of the distribution of defects introduced by plasma exposure in Si substrate2019
- Author(s)
  Sato Yoshihiro、Shibata Satoshi、Uedono Akira、Urabe Keiichiro、Eriguchi Koji
- Journal Title
  
  Journal of Vacuum Science & Technology A
  
  Volume: 37 Pages: 011304-011304
- DOI
  10.1116/1.5048027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H05849, KAKENHI-PLANNED-16H06424
[Journal Article] Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam2019
- Author(s)
  Uedono Akira、Siladie Alexandra-Madalina、Pernot Julien、Daudin Bruno、Ishibashi Shoji
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 125 Pages: 175705-175705
- DOI
  10.1063/1.5088653
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy2019
- Author(s)
  Yamashita Yudai、Takahara Yuuki、Sato Takuma、Toko Kaoru、Uedono Akira、Suemasu Takashi
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 5 Pages: 055506-055506
- DOI
  10.7567/1882-0786/ab14b9
- NAID
  210000155702
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K18865, KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-18H03767, KAKENHI-PROJECT-19J21372
[Journal Article] Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys2019
- Author(s)
  Ishibashi Shoji、Uedono Akira、Kino Hiori、Miyake Takashi、Terakura Kiyoyuki
- Journal Title
  
  Journal of Physics: Condensed Matter
  
  Volume: 31 Pages: 475401-475401
- DOI
  10.1088/1361-648x/ab35a4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Effect of dopant concentration and annealing of Yttrium doped CuO nanocrystallites studied by positron annihilation spectroscopy2019
- Author(s)
  Sellaiyan S.、Vimala Devi L.、Sako K.、Uedono A.、Sivaji K.
- Journal Title
  
  Journal of Alloys and Compounds
  
  Volume: 788 Pages: 549-558
- DOI
  10.1016/j.jallcom.2019.02.247
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy2019
- Author(s)
  Sumiya M.、Fukuda K.、Takashima S.、Ueda S.、Onuma T.、Yamaguchi T.、Honda T.、Uedono A.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 511 Pages: 15-18
- DOI
  10.1016/j.jcrysgro.2019.01.021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures2019
- Author(s)
  Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Takashima Shin-ya、Ueno Katsunori、Edo Masaharu、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Ishibashi Shoji、Uedono Akira
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SC Pages: SC0802-SC0802
- DOI
  10.7567/1347-4065/ab0d06
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE2019
- Author(s)
  Yamazaki A.、Naramoto H.、Sasa K.、Ishii S.、Tomita S.、Sataka M.、Kudo H.、Ohkubo M.、Uedono A.
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  
  Volume: 450 Pages: 319-322
- DOI
  10.1016/j.nimb.2018.10.015
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ￣ ) p-type GaN fabricated by sequential ion-implantation of Mg and H2018
- Author(s)
  Shima K.、Iguchi H.、Narita T.、Kataoka K.、Kojima K.、Uedono A.、Chichibu S. F.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Pages: 191901-191901
- DOI
  10.1063/1.5050967
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H04809
[Journal Article] Valence band edge tail states and band gap defect levels of GaN bulk and InxGa1−xN films detected by hard X-ray photoemission and photothermal deflection spectroscopy2018
- Author(s)
  M. Sumiya, S. Ueda, K. Fukuda, Y. Asai, Y. Cho, L. Sang, A. Uedono, T. Sekiguchi, T. Onuma, and T. Honda
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 2 Pages: 021002-021002
- DOI
  10.7567/apex.11.021002
- NAID
  210000136099
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8?MeV proton beam2018
- Author(s)
  K. Koike, M. Yano, S. Gonda, A. Uedono, S. Ishibashi, K. Kojima, S. F. Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Pages: 161562-161562
- DOI
  10.1063/1.5010704
- NAID
  120006537224
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04936, KAKENHI-PROJECT-17K06472, KAKENHI-PLANNED-16H06424
[Journal Article] Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films2018
- Author(s)
  Iwashita Shinya、Denpoh Kazuki、Kagaya Munehito、Kikuchi Takamichi、Noro Naotaka、Hasegawa Toshio、Moriya Tsuyoshi、Uedono Akira
- Journal Title
  
  Thin Solid Films
  
  Volume: 660 Pages: 865-870
- DOI
  10.1016/j.tsf.2018.03.001
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams2018
- Author(s)
  Uedono Akira、Yamada Takahiro、Hosoi Takuji、Egger Werner、Koschine Toenjes、Hugenschmidt Christoph、Dickmann Marcel、Watanabe Heiji
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Pages: 182103-182103
- DOI
  10.1063/1.5027257
- NAID
  120006537233
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] AlN metal–semiconductor field-effect transistors using Si-ion implantation2018
- Author(s)
  H. Okumura、S. Suihkonen、J. Lemettinen、A. Uedono、Y. Zhang、D. Piedra、T. Palacios
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FR11-04FR11
- DOI
  10.7567/jjap.57.04fr11
- NAID
  210000149017
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14110, KAKENHI-PLANNED-16H06424
[Journal Article] Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate2018
- Author(s)
  Chichibu S. F.、Shima K.、Kojima K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.、Uedono A.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Pages: 211901-211901
- DOI
  10.1063/1.5030645
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Positron Annihilation Studies on Chemically Synthesized FeCo Alloy2018
- Author(s)
  Rajesh P.、Sellaiyan S.、Uedono A.、Arun T.、Joseyphus R. Justin
- Journal Title
  
  Scientific Reports
  
  Volume: 8
- DOI
  10.1038/s41598-018-27949-2
- NAID
  120006496522
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN2018
- Author(s)
  Chichibu S. F.、Uedono A.、Kojima K.、Ikeda H.、Fujito K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Pages: 161413-161413
- DOI
  10.1063/1.5012994
- NAID
  120006537225
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907, KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-17H04809
[Journal Article] 陽電子消滅による空孔型欠陥の評価2018
- Author(s)
  1.上殿明良
- Journal Title
  
  New Diamond
  
  Volume: 34 Pages: 49-52
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition2018
- Author(s)
  Iwashita Shinya、Moriya Tsuyoshi、Kikuchi Takamichi、Kagaya Munehito、Noro Naotaka、Hasegawa Toshio、Uedono Akira
- Journal Title
  
  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
  
  Volume: 36 Pages: 021515-021515
- DOI
  10.1116/1.5001552
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] AlN metal-semiconductor field-effect transistors using Si-ion implantation2018
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, Y. Zhang, D. Piedra, and T. Palacios
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149017
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams2018
- Author(s)
  Uedono Akira、Nabatame Toshihide、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Sumiya Masatomo、Ishibashi Shoji
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Pages: 155302-155302
- DOI
  10.1063/1.5026831
- NAID
  120006537221
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams2017
- Author(s)
  Uedono Akira、Takashima Shinya、Edo Masaharu、Ueno Katsunori、Matsuyama Hideaki、Egger Werner、Koschine Tonjes、Hugenschmidt Christoph、Dickmann Marcel、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 2017 Pages: 1700521-1700521
- DOI
  10.1002/pssb.201700521
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation2017
- Author(s)
  Uedono Akira、Imanishi Masayuki、Imade Mamoru、Yoshimura Masashi、Ishibashi Shoji、Sumiya Masatomo、Mori Yusuke
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 475 Pages: 261-265
- DOI
  10.1016/j.jcrysgro.2017.06.027
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams2017
- Author(s)
  Uedono Akira、Tanaka Taketoshi、Ito Norikazu、Nakahara Ken、Egger Werner、Hugenschmidt Christoph、Ishibashi Shoji、Sumiya Masatomo
- Journal Title
  
  Thin Solid Films
  
  Volume: 639 Pages: 78-83
- DOI
  10.1016/j.tsf.2017.08.021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424
[Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, and A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol.113,No.21 Pages: 2135061-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu,K. Hiramatsu, A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Pages: 213-213
- DOI
  10.1063/1.4807906
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-24560010
[Journal Article] Time-resolved luminescence studies on AlN and high AlN mole fractionAlGaN alloys2013
- Author(s)
  S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 10 Pages: 501-506
- DOI
  10.1002/pssc.201200676
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 50 Pages: 1-8
- DOI
  10.1149/05042.0001ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements2013
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, and Z. Sitar
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Pages: 1421031-5
- DOI
  10.1063/1.4823826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam2012
- Author(s)
  A.Uedono, S.Ishibashi, K.Tenjinbayashi, T.Tsutsui, K.Nakahara, D.Takamizu, S.F.Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 111 Pages: 0145081-6
- DOI
  10.1063/1.3675516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Major impacts of point defects and impurities on the carrier recombination dynamics in AlN2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, A.Uedono
- Journal Title
  
  Appl.Phys.Lett. 97
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Application of positron annihilation technique to front and backend processes for modern LSI devices2011
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  J.Phys. : Conf.Ser.
  
  Volume: 262
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions2011
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono
- Journal Title
  
  Applied Physics Letters
  
  Volume: 99 Pages: 0519021-3
- DOI
  10.1063/1.3615681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  40017116081
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Proc.of 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  
  Pages: 1498-1501
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅の基礎と最先端2010
- Author(s)
  上殿明良, 他
- Journal Title
  
  応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト
  
  Pages: 1-8
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN2010
- Author(s)
  S.Chen, A.Uedono, S.Ishibashi, S.Tomita, H.Kudo, K.Akimoto
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam2010
- Author(s)
  A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- NAID
  40017116081
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅法を用いた材料解析-材料不良解析への応用-2010
- Author(s)
  上殿明良
- Journal Title
  
  SDM2009 190
  
  Pages: 49-52
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅の基礎と最先端2010
- Author(s)
  上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
- Journal Title
  
  応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Epitaxial DyScO_3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO32010
- Author(s)
  G.Yuan, K.Nishio, M.Lippmaa, A.Uedono
- Journal Title
  
  J.Phys.D : Appl.Phys. 43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu配線の欠陥評価2010
- Author(s)
  上殿明良, 他
- Journal Title
  
  電子デバイスにおける原子輸送・応力問題第15回研究会予稿集
  
  Pages: 31-34
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Identification of extremely radiative nature of AlN by time-resolved photoluminescence2010
- Author(s)
  T.Onuma, K.Hazu, A.Uedono, T.Sota, S.F.Chichibu
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Proc.13th IEEE Int.Interconnect Tech.Conf.
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  Proc.2010 Int.Workshop on Junction Technology Extended Abstracts
  
  Pages: 149-154
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] 陽電子消滅の基礎と最先端2010
- Author(s)
  上殿明良, 他
- Journal Title
  
  応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト
  
  Pages: 1-8
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy2010
- Author(s)
  T.Onuma, A.Uedono, H.Asamizu, H.Sato, J.F.Kaeding, M.Iza, S.P.DenBaars, S.Nakamura, S.F.Chichibu
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam2009
- Author(s)
  K.Yamanaka, A.Uedono
- Journal Title
  
  Scripta Materialia 61
  
  Pages: 8-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009
- Author(s)
  T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono and S. F. Chichibu
- Journal Title
  
  J. App. Phys 105
- NAID
  120002338505
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] 陽電子消滅による窒化物光半導体の点欠陥の評価2009
- Author(s)
  上殿明良
- Journal Title
  
  日本結晶成長学会誌(総合報告)
  
  Volume: 36 Pages: 155-165
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
- Author(s)
  R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, K. Yamabe
- Journal Title
  
  Proc. IEEE Int. Electron Device Meeting (IEDM)
  
  Pages: 131-134
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009
- Author(s)
  T.Onuma, T.Shibata, K.Kosaka, K.Asai, S.Sumiya, M.Tanaka, T.Sota, A.Uedono, S.F.Chichibu
- Journal Title
  
  J.App.Phys. 105
- NAID
  120002338505
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009
- Author(s)
  A.Uedono, H.Nakamori, K.Narita, J.Suzuki, X.Wang, S.-B.Che, Y.Ishitani, A.Yoshikawa, S.Ishibashi
- Journal Title
  
  J.App.Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Point defects in group-III nitride semiconductors studied by positron annihilation2009
- Author(s)
  A.Uedono, et al.
- Journal Title
  
  J.Crystal Growth
  
  Volume: 311 Pages: 3075-3079
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation m2009
- Author(s)
  上殿明良
- Journal Title
  
  J. Appl. Phys 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams2009
- Author(s)
  A. Uedono, N. Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, M. Yoshimaru, N. Oshima, T. Ohdaira, R. Suzuki
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- NAID
  40016890464
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Journal Title
  
  Proc.IEEE Int.Electron Device Meeting (IEDM)
  
  Pages: 131-134
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Positron annihilation study on defects in HfSiON films deposited byelectron-beam evaporation2009
- Author(s)
  G.Yuan, X.Lu, H.Ishiwara, A.Uedono
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams2009
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  40016890464
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams2009
- Author(s)
  上殿明良, et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  40016890464
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009
- Author(s)
  A. Uedono, H. Nakamori, K. Narita, and J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa and S. Ishibashi
- Journal Title
  
  J. App. Phys 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] III族窒化物半導体(Al, Ga)Nにおける発光特性と点欠陥の相関関係2009
- Author(s)
  秩父重英, 上殿明良
- Journal Title
  
  日本結晶成長学会誌(総合報告)
  
  Volume: 36 Pages: 166-177
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation2009
- Author(s)
  上殿明良
- Journal Title
  
  J. Appl. Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  上殿明良, et al.
- Journal Title
  
  Proc.12tn IEEE 2009 Int.Interconnect Tech. 12
  
  Pages: 75-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Journal Title
  
  Proc.12tn IEEE 2009 Int.Interconnect Tech.
  
  Pages: 75-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  A. Uedono, N. Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, M. Yoshimaru, N. Oshima, T. Ohdaira, R. Suzuki
- Journal Title
  
  Proc. 12tn IEEE 2009 Int. Interconnect Tech.
  
  Pages: 75-77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008
- Author(s)
  A.Uedono, C.Shaoqiang, S.Jongwon, K.Ito, H.Nakamori, N.Honda, S.Tomita, K.Akimoto, H.Kudo, S.Ishibashi
- Journal Title
  
  J.App.Phys. 103
- NAID
  120001870265
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008
- Author(s)
  上殿明良
- Journal Title
  
  J. Appl. Phys. 103
- NAID
  120001870265
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008
- Author(s)
  A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo and S. Ishibashi
- Journal Title
  
  J. App. Phys 103
- NAID
  120001870265
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.Denbaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams2007
- Author(s)
  A. Uedono
- Journal Title
  
  J. Appl. Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams2007
- Author(s)
  A. Uedono
- Journal Title
  
  J. App. Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360285
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sot
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams2007
- Author(s)
  A.Uedono
- Journal Title
  
  J. App. Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Impact of nitridation on open volumes in HfSiO_x studied using monoenergetic positron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Yamabe, K.Eguchi, M.Takayanagi, T.Odaira, M.Marumatsu, R.Suzuki, A.S.Hamid, T.Chikyow
- Journal Title
  
  Appl. Phys. Lett. 88
  
  Pages: 171912-171912
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Impact of nitridation on open volumes in HfSiO_x studied using monoenergetic positron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Yamabe, K.Eguchi, M.Takayanagi, T.Odaira, M.Marumatsu, R.Suzuki, A.S.Hamid, T.Chikyow
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 171912-171912
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006
- Author(s)
  S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
- Journal Title
  
  Journal of Applied Physics 99(9)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006
- Author(s)
  S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
- Journal Title
  
  Journal of Applied Physics 99 (9)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.Yamabe
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
- Journal Title
  
  Semiconductor Science and Technology 20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.Yamabe
- Journal Title
  
  Journal of Applied Physics 97
  
  Pages: 33508-33508
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of open spaces in high-k materials by monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Surface Science 26
  
  Pages: 268-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23508-23508
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing Properties of Open Volumes in HfSiO_x and HfAlO_x gate dielectrics Studied Using Monoenergetic Positron Beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing properties of open volumes in HfSiO_x and HfAlO_x gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J. Appl. Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.yamabe
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono, K.Ikeuchi, K.Yamabe, T.Ohdaira, M.Muramatsu, R.Suzuki, A.S.Hamid, T.Chikyow, K.Torii, K.Yamada
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Exciton-polariton spectra and limiting factors for the room temperature photoluminescence efficiency in ZnO2005
- Author(s)
  Chichibu, Uedono, Tsukazaki, Onuma, Zamfirescu, Ohtomo, Kavokin, Cantwell, Litton, Sota, Kawasaki
- Journal Title
  
  Semiconductor Science and Technology (4月出版)
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] 陽電子による先端半導体材料の評価2005
- Author(s)
  上殿明良ほか
- Journal Title
  
  応用物理 74
  
  Pages: 1223-1226
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 99
  
  Pages: 54507-54507
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing properties of open volumes in HfSiO_x and HfAlO_x gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J. Appl. Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Vacancy-type defects in wide-gap semiconductors probed by positron annihilation2005
- Author(s)
  A.Uedono, S.F.Chichibu
- Journal Title
  
  Extended Abstracts of 24th Electronic Materials Symposium 24
  
  Pages: 333-334
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Defects Introduced Into Electroplated Cu Films During Room-Temperature Recrystallization Probed by a Monoenergetic Positron Beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Exeiton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
- Journal Title
  
  Semiconductor Science and Technology 20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] 低速陽電子ビームを用いたhigh-k膜の空隙評価2005
- Author(s)
  上殿明良ほか
- Journal Title
  
  表面科学 26
  
  Pages: 268-273
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of advanced semiconductor materials by positron annihilation2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Ouyoubutsuri 74
  
  Pages: 1223-1226
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positron beams2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J. Appl. Phys. 99
  
  Pages: 54507-54507
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono et al.
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing properties of open volumes in HfSiOx arid HfAlOx gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono, K.Ikeuchi, K.Yamabe, T.Ohdaira, M.Muramatsu, R.Suzuki, A.S.Hamid, T.Chikyow, K.Torii, K.Yamada
- Journal Title
  
  J.Appl.Phys. 98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x fabricated by atomic-layer-deposition technique using monoenergetic positron beam2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 43
  
  Pages: 7848-7852
- NAID
  10014215085
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Jpn.J.Appl.Phys. 43(11B)
  
  Pages: 7848-7852
- NAID
  130004531545
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of HfO.3A1O.70x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Japanese Journal of Applied Physics 43(11B)
  
  Pages: 7848-7852
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Vacancy-Type Defects in SrTiO_3 Probed by a Monoenergetic Positron Beam2004
- Author(s)
  A.Uedono, M.Kiyohara, K.Shimoyama, Y.Matsunaga, N.Yasui, K.Yamabe
- Journal Title
  
  Materials Sci.Forum 445-446
  
  Pages: 201-203
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Point defects in thin HfAlO_x films probed by monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Mat.Res.Soc.Symp.Proc. 786
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x fabricated by atomic-layer-deposition technique using monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 7848-7852
- NAID
  10014215085
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.-.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85 (23)
  
  Pages: 5586-5588
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Characterizing metal-oxide-semiconductor structures consisting of HfSiO_x as gate dielectrics using monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 1254-1259
- NAID
  10012859094
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Point defects in thin HfAlO_x films probed by monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Mat. Res. Soc. Symp. Proc. 786
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Suppression of the Transient Current of MOS Consisting of HfAlO_x as Gate Dielectrics Studied by Positron Annihilation2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28, 2004, Tokyo, Japan
  
  Pages: 120-123
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Vacancy-Type Defects in SrTiO_3 Probed by a Monoenergetic Positron Beam2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Materials Science Forum 445-446
  
  Pages: 201-203
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7848-7848
- NAID
  10014215085
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterizing metal-oxide-semiconductor structures consisting of HfSiO_x as gate dielectrics using monoenergetic positron beams2004
- Author(s)
  A.Uedono et al.
- Journal Title
  
  Jpn. J. Appl. Phys. 43
  
  Pages: 1254-1259
- NAID
  10012859094
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Journal Title
  
  IEEE 2005 Int.Reliability Physics Symposium Proceeding
  
  Pages: 648-649
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Patent] 低速陽電子ビーム発生装置2009
- Inventor(s)
  上殿明良,服部信美,中村友二,江口和弘,五十嵐信行,吉丸正樹
- Industrial Property Rights Holder
  株式会社半導体理工学研究センター,国立大学法人筑波大学
- Acquisition Date
  2009-10-16
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] InGaN/GaNヘテロ構造成長におけるAlNテンプレートの変化2020
- Author(s)
  角谷正友，高原悠希，矢代秀平，本田徹，Dickerson Kindole1，竹端寛治，今中康貴，上殿明良
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)2020
- Author(s)
  嶋紘平，中須大蔵，正直花奈子，上杉謙次郎，小島一信，上殿明良，三宅秀人，秩父重英
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)2020
- Author(s)
  中須大蔵，嶋紘平，正直花奈子，上杉謙次郎，小島一信，上殿明良，三宅秀人，秩父重英
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 陽電子消滅によるSiO2/GaN構造の空隙と空孔型欠陥の検出2020
- Author(s)
  上殿明良，上野航，細井卓治，W. Egger，T. Koschine，C. Hugenschmidt，M. Dickmann M.，渡部平司
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 気相成長m面自立AlN基板およびホモエピタキシャル層の偏光特性と発光ダイナミクス2020
- Author(s)
  秩父重英，小島一信，羽豆耕治，石川陽一，古澤健太郎，三田清二，Collazo Ramon，Sitar Zlatko，上殿明良
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] PVT成長AlN上にHVPE成長させたSi添加AlN基板の陰極線蛍光評価2020
- Author(s)
  秩父重英，嶋紘平，小島一信，Moody Baxter，三田清二，Collazo Ramon，Sitar Zlatko，熊谷義直，上殿明良
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Impact of Vacancy Complexes on the Nonradiative Recombination Processes in III-N Devices2019
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
- Organizer
  13th Int. Conf. Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Annealing behaviors of open spaces in thin Al2O3 films deposited on semiconductors studied using monoenergetic positron beams2019
- Author(s)
  A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and S. Ishibashi
- Organizer
  15th Int. Workshop Slow Positron Beam Techniques and Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors2019
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
- Organizer
  SPIE Photonics West, OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Open spaces in Al2O3 film deposited on widegap semiconductors probed by monoenergetic positron beams2019
- Author(s)
  A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, M. Sumiya, and S. Ishibashi
- Organizer
  American Vacuum Society Int. Sym. Ohio
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] エピタキシャル成長およびイオン注入Mg添加GaN中の非輻射再結合中心2019
- Author(s)
  秩父重英，嶋紘平，小島一信，高島信也，上野勝典，江戸雅晴，井口紘子，成田哲生，片岡恵太，石橋章司，上殿明良
- Organizer
  第216回研究集会　シリコンテクノロジー分科会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] The Infuence of AlN Nucleation Layer on Radio Frequency (RF) Transmission Loss of GaN-on-Si Structure2019
- Author(s)
  M. Zhao, V. Spampinato, A. Franquet, D. Hein, L. Chang and A. Uedono
- Organizer
  13th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 容量測定を用いたp-GaNエピへの低濃度Mg注入と共注入影響の評価2019
- Author(s)
  高島信也，上野勝典，田中亮，松山秀昭，江戸雅晴，嶋紘平，小島一信，秩父重英，上殿明良
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN2019
- Author(s)
  S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and A. Uedono
- Organizer
  13th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] In Line and Ex Situ Metrology and Characterization to Enable Area Selective Deposition2019
- Author(s)
  C. Vallee, M. Bonvalot, B. Pelissier, J.-H. Tortai, S. David, S. belahcen, V. Pesce, M. Jaffal, A. Bsiesy, R. Gassilloud, N. Posseme, T. Grehl, P. Bruner, and A. Uedono
- Organizer
  American Vacuum Society Int. Sym.
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Photoluminescence Studies of Sequentially Mg and H Ion-Implanted GaN with Various Implantation Depths and Crystallographic Planes2019
- Author(s)
  K Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu
- Organizer
  13th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Vacancy-type defects in GaN-based power device structure defect characterization inion implanted GaN and Al2O3/GaN2019
- Author(s)
  A. Uedono, W. Egger, C. Hugenschmidt, and S. Ishibashi
- Organizer
  Compound Semiconductor Week 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 注入深さ・極性面の異なるMgイオン注入GaNのフォトルミネッセンス2019
- Author(s)
  秩父重英，嶋紘平，井口紘子，成田哲生，片岡恵太，小島一信，上殿明良
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy2019
- Author(s)
  A. Uedono, W. Egger, C. Hugenschmidt, and S. Ishibashi
- Organizer
  SPIE Photonics West, OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Vacancy-type defects in ion-implanted GaN probed by monoenergetic positron beams2019
- Author(s)
  A. Uedono, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, and S. Ishibashi
- Organizer
  MLZ User Meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Carrier Trapping Properties of Defects in Mg-implanted GaN Probed by Monoenergetic Positron Beams2018
- Author(s)
  A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, and S. Chichibu, S. Ishibashi
- Organizer
  45th Int. Sym. Compound Semiconductors, 30th Int. Conf. Indium Phosphide and Related Materials, Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Mgイオン注入N極性面GaNの時間分解フォトルミネッセンス評価2018
- Author(s)
  嶋紘平, 井口紘子, 成田哲生, 片岡恵太, 上殿明良, 小島一信, 秩父重英
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 光熱偏向分光法によるMgイオン注入GaN層の評価2018
- Author(s)
  福田清貴，高島信也，尾沼猛儀，山口智広，本田徹，上殿明良，角谷正友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Carrier trapping by vacancy-type defects in group-III nitrides studied by means of positron annihilation2018
- Author(s)
  A. Uedono, M. Sumiya, and S. Ishibashi
- Organizer
  Third DAE-BRNS Trombay Positron Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Carrier Trapping and Detrapping Processes in Wide Bandgap Semiconductors Studied by Positron Annihilation2018
- Author(s)
  A. Uedono, W. Egger, C. Hugenschmidt, and S. Ishibashi
- Organizer
  Int. Conf. Positron Annihilation
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 陽電子消滅による窒化物半導体中0次元特異構造（点欠陥）のキャリア捕獲の評価2018
- Author(s)
  上殿明良，石橋章司，角谷正友
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価－ボイドサイズと光学パラメータの相関普遍性に関する考察－2018
- Author(s)
  松木伸行、松井卓矢、満汐孝治、オロークブライアン、大島永康、上殿明良
- Organizer
  第65回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] Mg イオン注入GaN MOSFET のチャネル特性向上2018
- Author(s)
  高島信也，田中亮，上野勝典，松山秀昭，江戸雅晴, 小島一信, 秩父重英, 上殿明良, 中川清和
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal election spectroscopy2018
- Author(s)
  M. Sumiya, K. Fukuda, S. Takashima, T. Yamaguchi, T. Onuma, T. Honda, and A. Uedono
- Organizer
  19TH Int. Conf. Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 学術界における量子ビーム利用－陽電子消滅法を例に－2018
- Author(s)
  上殿明良
- Organizer
  第1回量子ビームクラブ研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Al2O3/n-, p-GaN構造の光熱偏向分光法による評価2018
- Author(s)
  福田清貴，浅井祐哉，関慶祐，Sang Liwen，吉越章隆，上殿明良，石垣隆正，尾沼猛儀，山口智広，本田徹，角谷正友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 高純度ZnO中のSRH型非輻射再結合中心の起源と捕獲断面積2018
- Author(s)
  秩父重英，小島一信，小池一歩，矢野満明，權田俊一，石橋章司，上殿明良
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Evaluation of Al2O3/n-, p-GaN samples by photothermal deflection spectroscopy2018
- Author(s)
  K. Fukuda, Y. Asai, L. Sang, A. Yoshigoe, A. Uedono, T. Onuma, T. Yamaguchi, T. Honda, and M. Sumiya
- Organizer
  Int. Workshop on Nitride Semiconductor 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Analysis of deep traps at Al2O3/n-GaN interface using photo-assisted C-V measurement2018
- Author(s)
  K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, A. Uedono, L. Sang, Y. Koide, and T. Ohishi
- Organizer
  2018 Int. Conf. Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 分子線酸素ビーム照射下その場観察XPS によるGaN 表面酸化の面方位依存性2018
- Author(s)
  浅井祐哉，関慶祐，吉越章隆，隅田真人，石垣隆正，上殿明良，角谷正友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] 陽電子消滅法によるp-GaNエピ層、イオン注入層の点欠陥評価2018
- Author(s)
  上殿明良
- Organizer
  第149回結晶工学分科会研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018
- Author(s)
  角谷正友，福田清貴，上田茂典，浅井祐哉，Cho Yujin，関口隆史，上殿明良，尾沼猛儀，Sang Liwen，山口智広，本田徹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures2018
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono
- Organizer
  Int. Workshop on Nitride Semiconductor 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] III-V族窒化物の価電子帯構造およびギャップ内準位の評価2018
- Author(s)
  角谷正友, 福田清貴，上田茂典, 浅井祐哉, Cho Yujin, 関口隆史, 上殿明良, 尾沼猛儀, Sang Liwen, 本田徹
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams2018
- Author(s)
  A. Uedono, T. Tanaka, N. Ito, K. Nakahara, W. Egger, C. Hugenschmidt, S. Ishibashi, and M. Sumiya
- Organizer
  Electro Chemical Soc. and Americas Int. Meeting Electrochem. Solis state Science
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O2 molecular beam irradiation2018
- Author(s)
  Y. Asai, A. Yoshigoe, M. Sumita, A. Uedono, and M. Sumiya
- Organizer
  Int. Workshop on Nitride Semiconductor 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Study of point defects in nitrides and oxides by means of positron annihilation2017
- Author(s)
  A. Uedono
- Organizer
  5th Int. Conf. on Light-Emitting Devices and Their Industrial Applications
- Invited
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, T. Palacios
- Organizer
  2017 Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] GaN基板上Mg添加GaNの時間分解フォトルミネッセンス評価2017
- Author(s)
  秩父重英，小島一信，嶋紘平，高島信也，江戸雅晴，上野勝典，石橋章司，上殿明良
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] AlN metal-semiconductor field-effect transistors using Si-ion implantation2017
- Author(s)
  H. Okumura, S. Suihkonen, J. Lemettinen, A. Uedono, and T. Palacios
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Theoretical calculation of positron annihilation parameters for defects in UV materials (AlN, ZnO, Ga2O3)2017
- Author(s)
  S. Ishibashi and A. Uedono
- Organizer
  Int. Workshop on UV Materials and Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Fast optical determination of microvoid size in hydrogenated amorpshous silicon layers based on data obtained from positron annihilation spectroscopy2017
- Author(s)
  N. Matsuki, N. Oshima, B. O’Rourke, A. Uedono
- Organizer
  27th International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] Role of point defects on the luminescent properties of epitaxial and ion-implanted Mg-doped GaN fabricated on a GaN substrate2017
- Author(s)
  S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
- Organizer
  12th Int. Conf. Nitride Semiconductors, Strasbourg Convention Center
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures2017
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  11th Int. Sym. Semiconductor on Light Emitting Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Theoretical Calculation of Positron Annihilation Parameters in Group-III nitrides2017
- Author(s)
  S. Ishibashi and A. Uedono
- Organizer
  29th Int. Conf. Defects in Semiconductors, Matsue
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価－ボイドサイズ・水素結合・Si結合角ゆらぎの相互相関－2017
- Author(s)
  松木伸行、オロークブライアン、大島永康、上殿明良
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] 窒化物半導体合金中の陽イオン空孔における局所構造と陽電子消滅パラメータの間の相関の計算科学的研究2016
- Author(s)
  石橋章司、上殿明良、木野日織、三宅隆、寺倉清之
- Organizer
  平成28年度京都大学原子炉実験所専門研究会
- Place of Presentation
  京都大学原子炉実験所（大阪府泉南郡）
- Year and Date
  2016-12-08
- Data Source
  KAKENHI-PLANNED-16H06424
[Presentation] Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors2013
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  京都
- Year and Date
  2013-09-17
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英, 羽豆耕治, 石川陽一, 古澤健太郎, 上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都(シンポジウム招待)(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英,羽豆耕治,石川陽一,古澤健太郎,上殿明良
- Organizer
  2012年春季応用物理学会シンポジウム
- Place of Presentation
  東京(依頼講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Si添加Al_<0.6>Ga_<0.4>N混晶薄膜の時間分解フォトルミネッセンス評価2012
- Author(s)
  羽豆耕治, 石川陽一, 田代公則, 三宅秀人, 平松和政, 上殿明良, 秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 高AlNモル分率AlGaN混晶薄膜の時間分解PL/CL評価2012
- Author(s)
  秩父重英, 羽豆耕治, 尾沼猛儀, 上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono, S.Ishibashi, S.F.Chichibu, K.Akimoto
- Organizer
  SPIE Photonics West California
- Place of Presentation
  USA
- Year and Date
  2011-01-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Identification of extremely radiative nature of AlN by time-resolved photoluminescence and time-resolved cathodoluminescence measurements2011
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono, T.Sota
- Organizer
  SPIE Photonics West California
- Place of Presentation
  USA
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, T.Sota, A.Uedono
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono, et al.
- Organizer
  SPIE Photonics West
- Place of Presentation
  California, USA(招待講演)
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono
- Organizer
  SPIE Photonics West
- Place of Presentation
  California, USA(招待講演)
- Year and Date
  2011-01-25
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] AlNエピタキシャル薄膜の発光寿命と点欠陥他の関係について2011
- Author(s)
  秩父重英, 羽豆耕治, 尾沼猛儀, 上殿明良
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, T.Sota, A.Uedono
- Organizer
  European Materials Research Society, 2011 Spring Meeting
- Place of Presentation
  Nice, France(招待)(招待講演)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
- Author(s)
  A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, K.Tenjinbayashi1, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
- Organizer
  10th Int.Workshop on Junction Technology
- Place of Presentation
  FuXuan Hotel at Fundan University, FuXuan Hotel, Shanghai, China
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Application of positron annihilation technique to front and backend processes for modern LSI devices2010
- Author(s)
  A.Uedono
- Organizer
  12th Int.Workshop on Slow Positron Beam Technique
- Place of Presentation
  Magnetic Island, State of Queensland, Australia(招待講演)
- Year and Date
  2010-08-01
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Organizer
  2010 IEEE Int.Interconnect Technology Conf.
- Place of Presentation
  Hyatt Regency San Francisco Airport Hotel, Burlingame, California, USA
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出2010
- Author(s)
  上殿明良, 井上尚也, 林喜宏, 江口和弘, 中村友二, 廣瀬幸範, 吉丸正樹, 大島永康, 大平俊行, 鈴木良一
- Organizer
  配線・実装技術と関連材料技術
- Place of Presentation
  機械振興会館東京
- Year and Date
  2010-02-05
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良
- Organizer
  応用物理学会薄膜・表面物理分科会
- Place of Presentation
  名城大学(招待講演)
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Application of positron annihilation technique to front and backend processes for modern LSI devices2010
- Author(s)
  A.Uedono, S.Ishibashi, N.Oshima, T.Ohdaira, R Suzuki
- Organizer
  12th Int.Workshop on Slow Positron Beam Technique
- Place of Presentation
  Magnetic Island, State of Queensland, Australia
- Year and Date
  2010-08-01
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良,石橋章司,大島永康,大平俊行,鈴木良一
- Organizer
  応用物理学会薄膜・表面物理分科会第11回「イオンビームによる表面・界面解析」特別研究会
- Place of Presentation
  名古屋名城大学
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
- Author(s)
  A.Uedono
- Organizer
  10th Int.Workshop on Junction Technology
- Place of Presentation
  Shanghai, China(招待講演)
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation2010
- Author(s)
  A.Uedono
- Organizer
  10th IEEE International Conference on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China(招待講演)
- Year and Date
  2010-11-02
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅によるAlGaN中の欠陥評価2010
- Author(s)
  上殿明良, 三宅秀人, 平松和政, 石橋章司
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出2010
- Author(s)
  上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
- Organizer
  配線・実装技術と関連材料技術,
- Place of Presentation
  機械振興会館東京
- Year and Date
  2010-02-05
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Degradation in HfSiON film induced by electrical stress application2010
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Organizer
  217th Electrochemical Society Meeting
- Place of Presentation
  Hyatt Regency Vancouver and The Fairmont Hotel Vancouver, Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅によるAIGaN中の欠陥評価2010
- Author(s)
  上殿明良
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良
- Organizer
  応用物理学会薄膜・表面物理分科会
- Place of Presentation
  名城大学(招待講演)
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation2010
- Author(s)
  A.Uedono, S.Ishibashi, N.Oshima, T.Ohdaira, R.Suzuki
- Organizer
  2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-02
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
- Author(s)
  A.Uedono
- Organizer
  2010 IEEE Int.Interconnect Technology Conf.
- Place of Presentation
  California, USA
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2010
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, T.Sota, A.Uedono
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
- Organizer
  第15回結晶工学セミナー
- Place of Presentation
  学習院大学
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良,石橋章司,大島永康,大平俊行,鈴木良一
- Organizer
  第15回結晶工学セミナー「物理・化学分析の最先端技術を基礎から理解する」-究極の分析を目指して-
- Place of Presentation
  東京学習院大学
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良
- Organizer
  第15回結晶工学セミナー
- Place of Presentation
  学習院大学(招待講演)
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] AlN及び高AlNモル分率AlxGa1・xNエピタキシャル層の時間分解分光計測2010
- Author(s)
  秩父重英, 尾沼猛儀, 羽豆耕治, 上殿明良, 宗田孝之
- Organizer
  応用物理学会応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用」
- Place of Presentation
  大阪大学吹田キャンパス
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子の基礎と最先端2010
- Author(s)
  上殿明良
- Organizer
  第15回結晶工学セミナー
- Place of Presentation
  学習院大学(招待講演)
- Year and Date
  2010-11-18
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu 配線の欠陥評価2010
- Author(s)
  上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
- Organizer
  第15回電子デバイスにおける原子輸送・応力問題研究会
- Place of Presentation
  横浜市白山ハイテクパーク
- Year and Date
  2010-07-23
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu配線の欠陥評価2010
- Author(s)
  上殿明良
- Organizer
  第15回電子デバイスにおける原子輸送・応力問題研究会
- Place of Presentation
  白山ハイテクパーク(招待講演)
- Year and Date
  2010-07-23
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価2010
- Author(s)
  上殿明良, 石橋章司, 大島永康, 大平俊行, 鈴木良一
- Organizer
  応用物理学会
- Place of Presentation
  名城大学
- Year and Date
  2010-12-03
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子消滅によるAlGaN中の欠陥評価2010
- Author(s)
  上殿明良
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(招待講演)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Structure-modification model of porogen-based porous SiOC film with UV curing2010
- Author(s)
  Y.Oka, A.Uedono, K.Goto, Y.Hirose, M.Matsuura, M.Fujisawa, K.Asai
- Organizer
  Advanced Metallization Conference 2010
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-10-20
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  上殿明良, et al.
- Organizer
  12tn IEEE 2009 Int.Interconnect Tech.
- Place of Presentation
  Royton Sapporo Hotel Hokkaido
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅法を用いた材料解析-材料不良解析への応用-2009
- Author(s)
  上殿明良
- Organizer
  X線分析研究懇談会
- Place of Presentation
  大阪市立大学
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
- Author(s)
  A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
- Organizer
  12tn IEEE 2009 Int.Interconnect Tech.
- Place of Presentation
  Royton Sapporo Hotel, Hokkaido, Japan
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] 陽電子消滅法を用いた材料解析-材料不良解析への応用-2009
- Author(s)
  上殿明良
- Organizer
  X線分析研究懇談会
- Place of Presentation
  大阪市立大学(大阪府大阪市)(招待講演)
- Year and Date
  2009-11-05
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Theoretical calculations of positron states and annihilation parameters in group-III nitride semiconductors2009
- Author(s)
  S.Ishibashi, A.Uedono
- Organizer
  25th International Conference on Defects in Semiconductors
- Place of Presentation
  St Petersburg, Russia
- Year and Date
  2009-06-20
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration2009
- Author(s)
  N.Asami, T.Owada, S.Akiyama, N.Ohara, Y.Iba, T.Kouno, H.Kudo, S.Takesako, T.Osada, T.Kirimura, H.Watatani, A.Uedono, Y.Nara, M.Kase
- Organizer
  12tn IEEE 2009 Int.Interconnect Tech.
- Place of Presentation
  Royton Sapporo Hotel, Hokkaido, Japan
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Organizer
  2009 IEEE Int.Electron Devices Meeting
- Place of Presentation
  Hilton Baltimore, Baltimore, MD, USA
- Data Source
  KAKENHI-PROJECT-19360285
[Presentation] Point defects in group-III nitride semiconductors studied by positron annihilation2008
- Author(s)
  A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki
- Organizer
  The 2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-06
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子を用いたIII族窒化物半導体の点欠陥の研究2008
- Author(s)
  上殿明良
- Organizer
  特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
- Place of Presentation
  学士会館(東京)
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N2008
- Author(s)
  S. F. Chichibu, T. Onuma, and A. Uedono
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Raditive and nonradiative processes in (Al,In,Ga)N alloy films2007
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota
- Organizer
  14th Semiconducting and Insulating Materials Conference
- Place of Presentation
  Fayetteville, Arkansas, USA
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子消滅を用いた窒化物光半導体の空孔型欠陥の検出2007
- Author(s)
  上殿明良・秩父重英
- Organizer
  応用物理学会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 「ワイドバンドギャップ窒化物・酸化物半導体の発光寿命と点欠陥の関係」
- Author(s)
  秩父重英,上殿明良
- Organizer
  ワイドギャップ半導体光・電子デバイス162委員会 10月定期研究会
- Place of Presentation
  名城大学
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  The Fourth International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Effects of Si-doping on the near-band-edge emission dynamics of Al0.6Ga0.4N epilayers grown on AlN templates by metalorganic vapor phase epitaxy
- Author(s)
  S. F. Chichibu, H. Miyake, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hiramatsu, A. Uedono
- Organizer
  The IUMRS International Conference in Asia 2013 (IUMRS-ICA-2013)
- Place of Presentation
  Bangalore, India
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  The 39th International Symposium on Compound Semiconductors (ISCS 2012)
- Place of Presentation
  Santa Barbara, CA, USA
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Impacts of point defects on the photoluminescence lifetime of Si-doped Al0.6Ga0.4N epilayers grown on an AlN template
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), ECS222nd
- Place of Presentation
  Hawaii, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Effects of Si-doping on the recombination dynamics of excitons in AlGaN alloys studied by time-resolved cathodoluminescence
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Hazu, K. Furusawa, K. Hiramatsu, A. Uedono
- Organizer
  European Materials Research Society, 2013 Spring Meeting, Session L: Group III nitrides
- Place of Presentation
  Strasbourg, France
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] III-V族窒化物半導体の欠陥評価最前線
- Author(s)
  秩父重英,上殿明良
- Organizer
  応用物理学会　シリコンテクノロジー分科会第148回研究集会
- Place of Presentation
  グランキューブ大阪（大阪国際会議場）
- Invited
- Data Source
  KAKENHI-PROJECT-22246037

1. CHICHIBU Shigefusa (80266907)

# of Collaborated Projects: 5 results

# of Collaborated Products: 58 results
2. SOTA Takayuki (90171371)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
3. SUGIYAMA Mutsumi (40385521)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
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# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
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# of Collaborated Products: 3 results
7. 津坂佳幸 (20270473)

# of Collaborated Projects: 2 results

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8. 河村貴宏 (80581511)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
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# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. UCHIDA Kazuyuki (10393810)

# of Collaborated Projects: 1 results

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11. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

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12. HAZU Kouji (30367057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
13. FURUSAWA Kentaro (40392104)

# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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18. SEKIMURA Naoto (10183055)

# of Collaborated Projects: 1 results

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19. AKIMOTO Katsuhiro (90251040)

# of Collaborated Projects: 1 results

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20. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 1 results

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21. SUEMASU Takashi (40282339)

# of Collaborated Projects: 1 results

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22. Matsuki Nobuyuki (30373450)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
23. ORourke Brian (60586551)

# of Collaborated Projects: 1 results

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24. 角谷正友 (20293607)

# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

# of Collaborated Products: 31 results
26. 奥村宏典 (80756750)

# of Collaborated Projects: 1 results

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27. 森勇介 (90252618)

# of Collaborated Projects: 1 results

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28. 酒井朗 (20314031)

# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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31. KOBAYASI Yosinori

# of Collaborated Projects: 1 results

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# of Collaborated Projects: 1 results

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33. BRIAN O rourke

# of Collaborated Projects: 0 results

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34. ONUMA Takeyoshi

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# of Collaborated Products: 2 results
35. 小島一信

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# of Collaborated Products: 6 results
36. 嶋紘平

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# of Collaborated Products: 6 results
37. 小池一歩

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# of Collaborated Products: 1 results
38. 矢野満明

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39. Palacios Tomas

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40. Suihkonen Sami

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41. 平松和政

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42. 三宅秀人

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Uedono Akira 上殿 明良

上殿 明良 ウエドノ アキラ

UEDONO Akira 上殿 明良

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Growth of a thick GaN crystal with extremely low resistivity by the OVPE methodOngoing

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Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium sourceOngoing

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負性電子親和力を利用した高密度ポジトロニウム生成のためのダイヤモンド表面制御Ongoing

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Study of trapping/scattering dynamics of carriers in crystal singularity by means of positron annihilationPrincipal InvestigatorOngoing

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Study of insulator/Si interfaces and their stress using a monoenergetic positron beamPrincipal Investigator

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Study of point defects and light-emitting dynamics in group-III nitride semiconductorsPrincipal Investigator

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Study of vacancy-type defects in metal/metal-oxide by means of positron annihilationPrincipal Investigator

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STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATIONPrincipal Investigator

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低速陽電子線を用いた高温熱平衡状態におけるSiの点欠陥挙動解析Principal Investigator

Uedono Akira 上殿明良

上殿明良ウエドノアキラ

UEDONO Akira 上殿明良