Shiraishi Kenji 白石賢二

… Alternative Names

Researcher Number	20334039
Other IDs
External Links
Affiliation (Current)	2020: 名古屋大学, 未来材料・システム研究所, 教授
Affiliation (based on the past Project Information) *help	2015 – 2017: 名古屋大学, 未来材料・システム研究所, 教授 2015: 名古屋大学, 工学研究科, 教授 2014: 名古屋大学, 大学院工学研究科, 教授 2013 – 2014: 名古屋大学, 工学(系)研究科(研究院), 教授 2012: 筑波大学, 数理物質科学研究科, 教授 … More
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering / 表面界面物性 / Thin film/Surface and interfacial physical properties Except Principal Investigator Biological Sciences / Science and Engineering / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / 物理学一般 / Nanomaterials/Nanobioscience
Keywords	Principal Investigator 第一原理計算 / 理論 / 界面 / 半導体 / ナノサイエンス / ナノ物性 / 量子効果 / 界面反応 / シリコン / 欠陥 … More Except Principal Investigator 量子論 / タンパク質 / 電子状態 / プロトン移動 / 第一原理計算 / 計算科学 / 密度汎関数理論 / 半導体 / ナノ物質 / バイオ物質 / 電子移動 / 理論 / チトクローム酸化酵素 / ヘム / ナノ構造体 / 炭素ナノチューブ / 表面・界面 / 量子力学 / ナノ構造 / ハイブリッド計算 / 第一原理分子動力学計算 / 触媒反応 / 酵素反応 / 電子状態計算 / RNA / 立体構造 / シトクローム酸化酵素 / ペプチドグループ / アミドプロトン / III族窒化物半導体 / 点欠陥 / 発光ダイナミックス / GaN / AlN / InN / 光学測定 / 陽電子消滅 / 非輻射再結合 / AIN / MBE / CL / 表面・界面物性 / マイクロ・ナノデバイス / 計算物理 / シリコン酸窒化 / 自己拡散 / マイクロ・ナのデバイス / ダイヤモンド / キャリア伝導 / 電子電気材料 / 結晶工学 / 電気・電子材料 / 酸化物 / 窒化物 / 絶縁破壊機構 / 表面・界面物理解析 / 信頼性物理 / ゲート絶縁膜 / 結晶性 / ヘテロエピタキシャル成長 / 透過型電子顕微鏡 / SiC MOS / GaN on Si(001) / 結晶欠陥 / 発光解析 / ヘテロ界面 / 断面TEM観察 / 炭化ケイ素 / ＭＯＳゲート絶縁膜 / ＴＤＤＢ / Soft Breakdown / Hard Breakdown / 経時酸化膜絶縁破壊 / 絨毯爆撃状絶縁破壊痕 / SiO2 / タンパク質ナノチューブ / タンパク質ナノリング / 数理構造解析 / 非経験的分子軌道理論 / D, L交互アミノ酸リング / L体アミノ酸5残基リング / 電子構造 / 分子構造 / 生体高分子 / 高分子合成 / ペプチドナノリング / 蛋白質ナノチューブ / 第一原理電子論 / 環状ペプチド / Fmoc固相合成 / AFM観察 / ワイドバンドギャップ半導体 / 骨格構造の数理 / 分子構造と電子構造 / Protein nanotube / Protein nanoring / Mathematical molecular desigining / Ab initio molecular orbitals theory / D.L alternating amino acids rings / Synthesis and AFM observation / Electronic structure / Molecular structure / ナノ形状 / Car-Parrinello分子動力学 / Car-Parrinello分子動力学法 / Car-Parrinello法 / 密度汎関数法 / nano-material / bio-material / quantum theory / electron state / nano-shape / density functional theory / Car-Parrinello molecular dynamics / computational science Less

Synthesis of New Group IV Two Dimensional MaterialsPrincipal Investigator
- Principal Investigator
  
  Shiraishi Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Fundamental study of high-performance, low-power transistor by hetero interface formation
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Extremely high density carrier doping mechanism on diamond and application to the next generation devices
- Principal Investigator
  
  KASU Makoto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saga University
タンパク質超分子中のプロトン移動機構の電子レベルでの解明
- Principal Investigator
  
  BOERO Mauro
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Biological Sciences
- Research Institution
  University of Tsukuba
Theoretical Design of Nano-Device and Nano-Interface by First Principles ApproachPrincipal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Study of point defects and light-emitting dynamics in group-III nitride semiconductors
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
New development of the theories of nano-interfaces and their application to nano-devicesPrincipal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Control of Silicon Nanostructure Oxidation by Nitrogen Doping
- Principal Investigator
  
  UEMATSU Masashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Keio University
チトクローム酸化酵素におけるプロトンポンプ機構の電子レベルでの解明
- Principal Investigator
  
  BOERO Mauro
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Biological Sciences
- Research Institution
  University of Tsukuba
Quantum Design of Shapes and Functions in Nano- and Bio-Materials
- Principal Investigator
  
  OSHIYAMA Atsushi
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
  University of Tsukuba
Quantum Theory of Shapes and Properties in Nano-and Bio-Materials : Computational Physics Approach
- Principal Investigator
  
  OSHIYAMA Atsushi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  University of Tsukuba
Theoretical studies on the behaviors of impurities in high-k gate dielectrics.Principal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Theoretical studies on the basic processes of Si thermal oxidation.Principal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Institute of Physics, University of Tsukuba
First-principles theory of the protein nanotubes
- Principal Investigator
  
  TAKEDA Kyozaburo
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  物理学一般
- Research Institution
  Waseda University

All 2018 2017 2016 2015 2013 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model2018
- Author(s)
  T. Nagura, S. Kawachi, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, K. Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57
- NAID
  210000148861
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice2018
- Author(s)
  H. Shirakawa, M. Araidai, K. Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57
- NAID
  210000148905
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface2018
- Author(s)
  K. Chokawa, T. Narita, D. Kikuta, T. Kachi, K. Shiozaki, K. Shiraishi
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Pages: 031002-031002
- NAID
  210000136116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifes-pan Archive Memories2017
- Author(s)
  H. Shirakawa, K. Yamaguchi, M. Araidai, K. Kamiya, K. Shiraishi
- Journal Title
  
  IEICE Transaction on Electronics
  
  Volume: E100 Pages: 928-933
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] First-principles study on adsorption structure and electronic state of stanene on α-alumina surface2017
- Author(s)
  Araidai Masaaki、Kurosawa Masashi、Ohta Akio、Shiraishi Kenji
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 9 Pages: 095701-095701
- DOI
  10.7567/jjap.56.095701
- NAID
  210000148278
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17551, KAKENHI-PROJECT-15H03564
[Journal Article] Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons2017
- Author(s)
  A. Hattori, S. Tanaya, K. Yada, M. Araidai, M. Sato, Y. Hatsugai, K. Shiraishi, and Y. Tanaka
- Journal Title
  
  J. Phys.: Condens. Matter
  
  Volume: 29 Pages: 115302-111
- DOI
  10.1088/1361-648x/aa57e0
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-15H05853, KAKENHI-PLANNED-15H05855, KAKENHI-PROJECT-26247064, KAKENHI-PROJECT-15H03564, KAKENHI-PROJECT-16K13845, KAKENHI-PLANNED-25107005
[Journal Article] Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule2013
- Author(s)
  Y. Takagi, K. Shiraishi, M. Kasu, H. Sato
- Journal Title
  
  Surface Science
  
  Volume: 609 Pages: 203-206
- DOI
  10.1016/j.susc.2012.12.015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article]2010
- Author(s)
  Y. Sakurai, J-I Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys. 45
  
  Pages: 14001-14001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] A massively-parallel electronic-structure calculations based on real-space density functional theory2010
- Author(s)
  J-I, Iwata, D. Takahashi, A. Oshiyama, T. Boku, K. Shiraishi, S. Okada, K. Yabana
- Journal Title
  
  J. Comp. Phys. 229
  
  Pages: 2339-2363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] First principles studies on In-related nitride semiconductors2009
- Author(s)
  T. Obata, J-I. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Cryst. Growth (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-Prinicple Study on In-related Nitride" Smiconductors2009
- Author(s)
  T. Obata, J.-I. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Cryst. Growth (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons2009
- Author(s)
  K. Kamiya, S. Yamamoto, K. Shiraishi, A. Oshiyama
- Journal Title
  
  J. Phys. Chem. B 113
  
  Pages: 6866-6872
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Theoretical studies on the charge trap mechanism of MONOS type memories - Relationship between atomistic information and program/erase actions2009
- Author(s)
  A. Otake, K. Yamaguchi, K. Kobayashi, K. Shiraishi
- Journal Title
  
  Microelectronic. Eng. 86
  
  Pages: 1849-1851
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] A Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe $d$ Electrons2009
- Author(s)
  K. Kamiya, S. Yamamoto, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Significant change in electronic structures of heme upon reduction by strong coulomb repulsion between Fe d electrons2009
- Author(s)
  K. Kamiya, S. Yamamoto, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Phys. Chem. B 113
  
  Pages: 6886-6886
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Large-scale density-functional calculations on silicon divacancies.2008
- Author(s)
  J. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Physics Beview B77
  
  Pages: 115280-115280
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Chemical controllability of charge states of nitrogen-related defects in HfOxNy : First-principles calculations2008
- Author(s)
  N. Umezawa, K. Shiraishi, Y. Akasaka, A. Oshiyama, 他8名
- Journal Title
  
  Phys. Rev. B77
  
  Pages: 165130-165130
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Large-scale density-functional calculations on Si divacancies2008
- Author(s)
  J. -I. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Phys. Rev. B77
  
  Pages: 115208-115208
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] 'Chemical Controllability of Charge States of Nitrogen-Related Defects in HfO$_x$N$ y$ : First-Principles Calculations2008
- Author(s)
  N. Umezawa, K. Shiraishi, Y. Akasaka, A. Oshiyama, S. Inumiya, S. Miyazaki, K. Ohmori, T. Chikyow, T. Ohno_ K. Yamahe. Y. Nara.
- Journal Title
  
  Physical Review B 77
  
  Pages: 165130-165130
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing distortion2008
- Author(s)
  K. Takai, K. Shiraishi, A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Possible proton transfer mechanism through peptide groups in the H-pathway of the bovine cytochrome c oxidas2008
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Biochimica et Biophysica Acta-Bioenergetics 1777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Generation of Acceptor Levels in Ge by the Uniaxial Strain-A Theoretical Approach-2008
- Author(s)
  K. Takai, K. Shiraishi and A. Oshiyama
- Journal Title
  
  ECS Trans 16
  
  Pages: 261-266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level2008
- Author(s)
  M. Muraguchi, Y. Takada, S. Nomura, K. Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7807-7811
- NAID
  120001870459
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices2008
- Author(s)
  Y. Takada, M. Muraguchi, K. Shiraishi
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6199-6202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing dist ortion2008
- Author(s)
  K., Takai・K., Shiraishi・A., Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Ge Vacancies at Ge/Si Interfacee: Stress Enhanced Pairing Distrotion2008
- Author(s)
  K. Takai, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Physics Beview B77
  
  Pages: 45308-45308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Ge vacancies at Ge/Si interfaces : stress enhanced pairing distrotion2008
- Author(s)
  K. Takai, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Phys. Rev. B77
  
  Pages: 45308-45308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] 金属/絶縁体界面の統一理論2008
- Author(s)
  白石賢二、中山隆史
- Journal Title
  
  表面科学 29
  
  Pages: 92-98
- NAID
  10021165483
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] First-Principles Molecular Dynamics Study of Proton Transfer Mechanism in Bovine Cytochromec Oxidase.2007
- Author(s)
  Kamiya, K.・Boero, M.・Tateno, M.・Shiraishi, K.・Oshiyama, A.
- Journal Title
  
  Journal of Physics 19
  
  Pages: 365220-365220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Quantum Effects in Double-Walled Carbon Nanotube Capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Physics Beview B76
  
  Pages: 155436-155436
- NAID
  120000835204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum effects in double- walled carbon nanotubec capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Phys. Rev. B76
  
  Pages: 155436-155436
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76(15)
  
  Pages: 155436-155436
- NAID
  120000835204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics2007
- Author(s)
  N., Umezawa・K., Shiraishi・K., Torii, et. al.
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N., Umezawa・K., Shiraishi・S., Sugino, et. al.
- Journal Title
  
  APPLIED PHYSICS LETTERS 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures2007
- Author(s)
  K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Possible Mechanism of Proton Transfer through Peptide Groups in the H-pathway of the Bovine Cytochrome c Oxidase2007
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of the American Chemical Society 129
  
  Pages: 9663-9673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76(15) : Art. No. 155436 OCT
- NAID
  120000835204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Guiding principle of energy level controllability of silicon dangling bonds in HfSiON2007
- Author(s)
  N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
- Journal Title
  
  JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46
  
  Pages: 1891-1894
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76 (15) : Art. No. 155436
- NAID
  120000835204
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Possible mechanism of proton transfer through peptideg Groups in the H pathway of the Bovine Cytochrome c Oxidase2007
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Ame. Chem. Soc. 129
  
  Pages: 9663-9663
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics2007
- Author(s)
  N. Umezawa, K. Shiraishi, K. Torii, et. al.
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N, Umezawa, K, Shiraishi, et al
- Journal Title
  
  APPLIED PHYSICS LETTERS 91 (13) : Art. No. 132904
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Gate-component-induced high-k compositional change for dual-metal/dual-high-k CMOS-Cost-effective approach to utilize the effective work function stabilization by pinning-2007
- Author(s)
  M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, S. Miyazaki, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, and Y. Ohji.
- Journal Title
  
  Technical Digest of 2007 Symposium on VLSI Technology
  
  Pages: 66-67
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-based High-k Dielectrics2007
- Author(s)
  N. Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamaba, and Y. Nara
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-based High-k Dielectrics2007
- Author(s)
  N., Umezawa・K., Shiraishi・K., Torii・M., Boero, et. al.
- Journal Title
  
  IEEE Electron Dev. Lett. 28
  
  Pages: 363-363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films2007
- Author(s)
  T., ・Endoh・K., Hirose・K., Shiraishi
- Journal Title
  
  IEICE TRANSACTIONS ON ELECTRONICS E90C
  
  Pages: 955-961
- NAID
  10018216417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum effects in a cylindrical carbon-nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
- Journal Title
  
  OURNAL OF PHYSICS-CONDENSED MATTER 19 (36) : Art. No. 365218
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based High-k dielectrics2007
- Author(s)
  N. Umezawa, K. Shiraishi, K. Torii, M. Boero, 他6名
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 363-363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum Effects in Cylindrical Carbon-Nanotube Capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of Physics: Condensed Matter 19
  
  Pages: 365218-365218
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics2007
- Author(s)
  N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
- Journal Title
  
  JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46
  
  Pages: 3507-3509
- NAID
  40015421738
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Possible mechanism of proton transfer through peptide groups in the H-pathway of the Bovine cytochrome c oxidase.2007
- Author(s)
  Kamiya, K.・Boero, M.・Tateno, M.・Shiraishi, K.・Oshiyama, A.
- Journal Title
  
  J. Ame. Chem. Soc. 129
  
  Pages: 9663-9663
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子間混晶化2007
- Author(s)
  中山隆史、白石賢二
- Journal Title
  
  表面科学 28
  
  Pages: 28-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76
- NAID
  120000835204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N. Umezawa, K. Shiraishi, S. Sugino, et. al.
- Journal Title
  
  APPLIED PHYSICS LETTERS 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N, Umezawa, K, Shiraishi, et.al.
- Journal Title
  
  APPLIED PHYSICS LETTERS 91(13) : Art. No. 132904 SEP
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Ab initio-based approach on initial growth kinetics of GaN on GaN(001)2007
- Author(s)
  Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi and K. Kakimoto
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH 301
  
  Pages: 75-78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Novel Mechanism for Proton Transfer in Bovine Cytochrome c Oxidase2007
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of Physics: Condensed Matter 19
  
  Pages: 365220-365220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum effects in a cylindrical carbon-nanotube capacito2007
- Author(s)
  K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
- Journal Title
  
  JOURNAL OF PHYSICS-CONDENSED MATTER 19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films2007
- Author(s)
  T. Endoh, K. Hirose, K. Shiraishi
- Journal Title
  
  IEICE TRANSACTIONS ON ELECTRONICS E90C
  
  Pages: 955-961
- NAID
  110007519658
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] THEORETICAL STUDIES ON THE PHYSICAL PROPERTIES OF POLY-SI AND METAL GATES/HfO_2 RELATED HIGH-K DIELECTRICS INTERFACES2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Yasuo Nara
- Journal Title
  
  ECS Transactions 1(5)
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, K. Nakamura
- Journal Title
  
  Jpn. J. Appl. Phys. 45
- NAID
  10018461127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J.Phys.Chem B 110
  
  Pages: 4443-4450
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Chem. B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura
- Journal Title
  
  Jpn. J. Appl. Phys Part 2, 45
- NAID
  10018461127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Chem B 110
  
  Pages: 4443-4450
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J.Phys.Chem.B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Ymada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-392
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Enhances Si and B diffusion in Smiconductir-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M, Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Jpn. J. Appl. Phys. Part 2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Unique behavior of F-centers in high-k Hf-based Oxide2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-394
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation2006
- Author(s)
  A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
- Journal Title
  
  J.Appl.Phys. 100
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks2006
- Author(s)
  K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, T. Arikado, Y. Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-310
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Real-space Density-functional Calculations for Si Divacancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B (In press)
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Enol-to-keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces-Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces-2006
- Author(s)
  K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 25-25
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures - Remarkable Advantages of La_2O_3 over HfO_2 -2006
- Author(s)
  K.Ohmori, P.Ahmet, K.Shiraishi, K.Yamabe, H.Watanabe, Y.Akasaka, N.Umezawa, K.Nakajima, M.Yoshitake, T.Nakayama, K.-S.Chang, K.Kakushima, Y.Nara, M.L.Green, H.Iwai, K.Yamada, T.Chikyow
- Journal Title
  
  ECS Transactions 3(3)
  
  Pages: 351-351
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Enhanced Si and B diffusion in Smiconductir-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Real-space Density-Functional Cal- culations for Si Divacancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 196-196
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Real-space Density-Functional Calculations for Si Deviancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-275
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Enol-to-keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks2006
- Author(s)
  Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Technical Digest of 2006 Symposium on VLS1 Tech., Honolulu, USA
  
  Pages: 206-206
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation2006
- Author(s)
  A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
- Journal Title
  
  J. Appl. Phys. 100
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Theoretcial studies on the physical properties of polu-Si and metal gate/HfO_2 related high-k dielectrics interfaces2006
- Author(s)
  K. Shiraishi, 他8名
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, et al.
- Journal Title
  
  Jpn.J.Appl.Phys. Part 2, 45
- NAID
  10018461127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks2006
- Author(s)
  Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Technical Digest of 2006 Symposium on VLSI Tech.(Honolulu, USA)
  
  Pages: 206-206
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics Part 1 45
  
  Pages: 694-694
- NAID
  40007140212
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces -2006
- Author(s)
  K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 25-25
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] New theory of effective work functions at metal/high-k dielectric interfaces : Application to metal/high-k HfO_2 and La_2O_3 dielectric interfaces2006
- Author(s)
  K. Shiraishi, 他12名
- Journal Title
  
  ECS Transactions 2
  
  Pages: 25-25
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Real-space Density-Functional Cal- culations for Si Divacancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 196-199
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, et al.
- Journal Title
  
  Jpn. J. Appl. Phys. Part 2 45
- NAID
  10018461127
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Physics of Metal/High-k Interfaces2006
- Author(s)
  T.Nakayama, K.Shiraishi, S.Miyazaki, Y.Akasaka, T.Nakaoka, K.Torii, A.Ohta, P.Ahmet, K.Ohmori, N.Umezawa, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 3(3)
  
  Pages: 129-129
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Effect of N atom doping on dielectric constants of Hf-based gate oxides2006
- Author(s)
  H.Momida, T.Hamada, T.Yamamoto, T.Uda, N.Umezawa, T.Chikyow, K.Shiraishi, T.Ohno
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 112903-112903
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe et al.
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks"2006
- Author(s)
  K.Shiraishi
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-310
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Enol-to-Keto tautomerism of peptide groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Chem. B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Enhanced Si and B diffusion in Semiconductor-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Physical Model of Electron and Hole Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) for Embedded Flash Memories2006
- Author(s)
  Kenji Shiraishi
- Journal Title
  
  Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
  
  Pages: 135-136
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe et al.
- Journal Title
  
  Jpn. J. Appl. Phys. Part2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-310
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Mechanism of oxide deformation during silicon thermal oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 407-410
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metla Gates/HfO_2 related High-k Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi.
- Journal Title
  
  Jap.J.of Appl.Phys. 45
  
  Pages: 694-699
- NAID
  40007140212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-395
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metla Gates/HfO_2 related High-k Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positoron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, N.Umezawa, A.Hamid, T.Chikyow, T.Ohdaira, M.Muramatsu, R.Suzuki, S.Inumiya, S.Kamiyama, Y.Akasaka, Y.Nara, K.Yamada
- Journal Title
  
  J.Appl.Phys. 99
  
  Pages: 54507-54507
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metla Gates/HfO_2 related High-K Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enhanced Si and B diffusion in Smiconductir-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B 110
  
  Pages: 4433-4433
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Enol-to-keto tautomerism of peptide groups2006
- Author(s)
  K. Kamiya, M. Boero, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Phys. Chem. B110
  
  Pages: 4443-4443
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO_2 related High-k Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-392
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Real-space Density-Functional Cal-culations for Si Divacancies with Large Size Super cell Models2006
- Author(s)
  J.I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 196-196
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Extensive Studies for Effects of Nitrogen Incorporation into Hf-based High-k Gate Dielectricxs2006
- Author(s)
  N.Umezawa, K.Shiraishi, H.Watanabe, K.Torii, Y.Akasaka, S.Inumiya, M.Boero, A.Uedono, S.Miyazaki, T.Ohno, T., Chikyow, K.Yamabe, Y.Nara, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 63-63
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n 1 1)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Appl.Surf.Sci. 244
  
  Pages: 178-178
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Jap.J.Appl.Phys.PART 2 44
- NAID
  10016856711
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-kdieletrics interfaces - Guiding principles for gate metal selection.2005
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  Journal of Chemical Physics 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Letters 26
  
  Pages: 722-722
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Jap. J. Appl. Phys. PART 2 44
- NAID
  10016856711
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate2005
- Author(s)
  H.Momida, T.Hamada, T.Yamamoto, T.Uda, N.Umezawa, K.Shiraishi, T.Chikyow, T.Ohno
- Journal Title
  
  Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan
  
  Pages: 488-489
- NAID
  10022542324
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  J. Chem. Phys 122
  
  Pages: 224101-224101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005
- Author(s)
  K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
  
  Pages: 43-46
- NAID
  110004382125
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
- Journal Title
  
  Japanease Journal of Applied Physics PART 2 44
- NAID
  10016856711
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Atomic Processes at and near Silicon/Silicon Dioxide interfaces2005
- Author(s)
  K.Shiraishi
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 427-430
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  J.Chem.Phys 122
  
  Pages: 224101-224101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-kdielectrics2005
- Author(s)
  N.Umezawa, K.shiraishi et al.
- Journal Title
  
  Appl.Phys.Lett. 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Japanease Journal of Applied Physics PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New electron states that float on semiconductor and metal surface2005
- Author(s)
  S. Okada, Y. Enomoto, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Surf. Sci. 585
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Letters 26
  
  Pages: 722-722
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Japanease Journal of Applied Physics PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Lett. 26
  
  Pages: 722-724
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n 1 1)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Appl. Surf. Sci 244
  
  Pages: 178-178
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005
- Author(s)
  K.Shiraishi
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting, Washington D.C.
  
  Pages: 43-46
- NAID
  110004382125
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Japanese Journal of Applied Physics, PART 2 44
- NAID
  10016856711
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-principles study of excess Si-atom stability around Si oxide/Si interfaces2005
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 389-390
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Impact of Electrode-side Chemical Structures on Electron Mobility in Metal/HfO2 MISFETs with sub-1nm EOT2005
- Author(s)
  Y.Akasaka, K.Miyagawa, T.Sasaki, K.Shiraishi, S.Kamiyama, O.Ogawa, F.Ootsuka, Y.Nara
- Journal Title
  
  Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan
  
  Pages: 228-229
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Impact of Electrode-side Chemical Structures on Electron Mobility in Metal/HfO_2 MISFETs with sub-1nm EOT2005
- Author(s)
  Y.Akasaka, K.Miyagawa, T.Sasaki, K.Shiraishi, S.Kamiyama, O.Ogawa, F.Ootsuka, Y.Nara
- Journal Title
  
  Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan
  
  Pages: 228-228
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikow, K.Torii, K.Yamabe, H.Kitajima, T.Arikado
- Journal Title
  
  Appl.Phys.Lett. 86
  
  Pages: 143507-143507
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First Principles Studies on the Novel Intrinsic Effect of Nitrogen Atoms for Reduction in Gate Leakage Current through Hf-based High-k Dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, et al.
- Journal Title
  
  Applied Physics Letters (in press)
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies on metal induced gap states(MIGS) at metal/high-k HfO_2 interfaces2005
- Author(s)
  T.Nakaoka, K.Shiraishi, Y.Akasaka, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan
  
  Pages: 860-861
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surf.Sci. 585
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics, PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Appl.Phys.Lett. 86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  Journal of Chemical Physics 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Letters 26
  
  Pages: 722-722
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Appl. Phys. Lett 86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jpn.J.Appl.Phys.PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
- Journal Title
  
  Jap.J.Appl.Phys.PART 2 44
- NAID
  10016856711
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - Guiding principles for gate metal selection,2005
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting
- NAID
  110004382125
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.shiraishi, T.Chikyow
- Journal Title
  
  J.Chem.Phys. 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
- Journal Title
  
  Japanease Journal of Applied Physics PART 2 44
- NAID
  10016856711
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.PART 1 44
  
  Pages: 7756-7759
- NAID
  10016870318
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n 11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Reliability degradation model of HfO_2 related high-k gate dielectrics2005
- Author(s)
  K.Torii, K.Shiraishi, S.Miyazaki, K.Yamada
- Journal Title
  
  Ouyobutsuri 74
  
  Pages: 1211-1216
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection2005
- Author(s)
  K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
  
  Pages: 43-43
- NAID
  110004382125
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  Journal of Chemical Physics 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to phase diagram calculations for GaAs(001) surfaces2005
- Author(s)
  T.Ito, H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 488-488
- NAID
  130004438978
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs (n 11) A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Appl.Surf.Sci. 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Electronic Structure of Polyglycine and Active sites of Cytochrome c Oxidase2004
- Author(s)
  K.Kamiya, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J.Phys.Soc.Jpn 73
  
  Pages: 3198-3208
- NAID
  110001979277
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Proposal of a new O-vacancy model that can explain many phenomena2004
- Author(s)
  K.Shiraishi, K.Yamada, T.Chikyow
- Journal Title
  
  Nikkei Micro Device Vol.10
  
  Pages: 55-58
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Technical Digest of 2004 Symposium on VLST Technology, Honolulu, USA
  
  Pages: 108-109
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach2004
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013787295
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Simulation of correlated diffusion of Si and B in thermally grown Si O_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
- Journal Title
  
  J.Appl.Phys. 96
  
  Pages: 5513-5519
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces2004
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.Part 1 43
  
  Pages: 8223-8226
- NAID
  10014216586
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] 多くの現象を説明できる新モデル「酸素空孔説」を提案2004
- Author(s)
  白石賢二
- Journal Title
  
  日経マイクロデバイス 10月号
  
  Pages: 55-58
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
- Author(s)
  K.Shiraishi
- Journal Title
  
  Tech. Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
  
  Pages: 108-109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Band Structures of Wurtzite InN and Ga{1-x}InxN by All-Electron GW Calculation2004
- Author(s)
  M.Usuda, N.Hamada, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  210000057192
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Electronic Structure of Polyglycine and Active sites of Cytochrome c Oxidase2004
- Author(s)
  K.Kamiya, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Soc. Jpn 73
  
  Pages: 3198-3208
- NAID
  110001979277
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Density Functional Calculations and Eigenchannel Analyses for Electron Transport in Al and Si Atomic Wires2004
- Author(s)
  S.Okano, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Phys.Rev.B 69
  
  Pages: 45401-45401
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-k MISFET with p+poly-Si Gates -A Theoretical Approach2004
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2, Express Letter 43
- NAID
  10013787295
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physical model of BTI, TDDB, and SILC in HfO_2-based high-k dielectrics2004
- Author(s)
  K.Torii, K.Shiraishi, S.Miyazaki, K.Yamabe, M.Boero, T.Chikyow, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Tech.Digest of 2004 IEEE International Electron Device Meeting (San Francisco, USA, December 13-15, 2004)
  
  Pages: 129-132
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Density Functional Calculations and Eigenchannel Analyses for Electron Transport in Al and Si Atomic Wires2004
- Author(s)
  S.Okano, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Phys. Rev. B 69
  
  Pages: 45401-45401
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Jpn.J.Appl.Phys.Part 1 43
  
  Pages: 7847-7852
- NAID
  10014215085
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Correlated diffusion of silicon and boron in thermally grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
- Journal Title
  
  Appl.Phys.Lett. 85
  
  Pages: 221-223
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physical Model of BTI, TDDB, and SILC in HfO_2 based high-k gate dielectrics2004
- Author(s)
  K.Torii, K.Shiraishi, et al.
- Journal Title
  
  Technical Digest of 2004 IEEE International Electron Device Meeting, San Francisco, USA
  
  Pages: 129-132
- NAID
  110003311212
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004
- Author(s)
  S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, Y.Takahashi, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys. 43
  
  Pages: 7837-7842
- NAID
  10014215041
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Band Structures of Wurtzite InN and Ga{1-x}InxN by All-Ele ctron GW Calculation2004
- Author(s)
  M.Usuda, N.Hamada, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
- Journal Title
  
  Tech.Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
  
  Pages: 108-109
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Density Functional Calculations and Eigenchannel Analyses for Electron Transport in Al and Si Atomic Wires2004
- Author(s)
  S.Okano, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Phys.Rev. B, 69
  
  Pages: 45401-45401
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-k MISFET with p^+poly-Si Gates -A Theoretical Approach2004
- Author(s)
  K.Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. Part 2, Express Letter 43
- NAID
  10013787295
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides
- Author(s)
  N.Umezawa, K.Shiraishi, Y.Akasaka, S.Inumiya, A.Uedono, S.Miyazaki, T.Chikyow, T.Ohno, Y.Nara, K.Yamada
- Journal Title
  
  Trans.Material Res.Soc.Jpn. 31
  
  Pages: 129-132
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] The Role of Nitrogen Incorporation in Hf-based High-k Dielectrics : Reduction in Electron Charge Traps
- Author(s)
  N.Umezawa, K.Shiraishi, K.Torii, M.Boero, T.Chikyow, H.Watanabe, K.Yamabe, T.Ohno, K.Yamada, Y.Nara
- Journal Title
  
  Proceedings of 35^<th> European Solid-State Device Research Conference (ESSDERC 2005)(12-16 September 2005, Grenoble, France.)
  
  Pages: 201-204
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Band Structures of Wurtzite InN and Ga{1-x}InxN by All-Electron GW Calculation
- Author(s)
  M.Usuda, N.Hamada, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  210000057192
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Presentation] ゲルマネンの水素吸脱着に関する第一原理計算2018
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会第73回年次大会
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] IV族系二次元物質の理論的研究2017
- Author(s)
  白石賢二
- Organizer
  日本物理学会第72回年次大会
- Place of Presentation
  吹田市
- Year and Date
  2017-03-17
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Electronic States of Silicene and Germanene on Amorphous Alumina2017
- Author(s)
  M. Araidai、M. Kurosawa、A. Ohta、K. Shiraishi
- Organizer
  International Conference on Solid State Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Theoretical Studies on Group IV Two Dimensional Material2017
- Author(s)
  K. Shiraishi
- Organizer
  Japan-India Seminar
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First-principles study on adsorption structures and electronic states of stanene and germanene on alumina2017
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  Special Meeting in JSPS Brain Circulation Program
- Place of Presentation
  名古屋
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 水素終端シリセン・ゲルマネンスタネンナノリボンのエッジ状態2017
- Author(s)
  服部綾実，棚谷翔，矢田圭司，洗平昌晃，佐藤昌利，初貝安弘，白石賢二，田仲由喜夫
- Organizer
  第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Place of Presentation
  名古屋
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] ELECTRONIC STRUCTURES OF GROUP IV TWO DIMENSIONAL MATERIALS2017
- Author(s)
  K. Shiraishi、A. Hattori、S. Tanaya、K. Yada、M. Araidai、Y. Hatsugai、M. Sato、Y. Tanaka
- Organizer
  13th International Conference on Diffusion in Solids and Liquids (DSL 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 水素終端シリセン，ゲルマネン，スタネンリボンにおけるエッジ状態2016
- Author(s)
  服部綾実，洗平昌晃，初貝安弘，矢田圭司，白石賢二，佐藤昌利，田仲由喜夫
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Edge states of silicene, germanene and stanene nanoribbons with edge hydrogen terminations2016
- Author(s)
  服部綾美、洗平昌晃、初貝安弘、矢田圭司、白石賢二、佐藤昌利、田仲由喜夫
- Organizer
  Quantum Materials Program Meeting
- Place of Presentation
  トロント
- Year and Date
  2016-04-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Edge states of silicene, germanene and stanene nanoribbons with edge hydrogen terminations2016
- Author(s)
  服部綾美、洗平昌晃、初貝安弘、矢田圭司、白石賢二、佐藤昌利、田仲由喜夫
- Organizer
  Frontiers in Quantum Materials and Devices Workshop
- Place of Presentation
  和光市
- Year and Date
  2016-06-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Electronic States of two-dimensional crystals of group IV element on α-Al2O3(0001) surfaces2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures,
- Place of Presentation
  ローマ
- Year and Date
  2016-10-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Theoretical Investigation of Group IV Two Dimensional Materials2016
- Author(s)
  白石賢二、服部綾美、棚谷翔、矢田圭司、洗平昌晃、初貝安弘、佐藤昌利、田仲由喜夫
- Organizer
  JSPS-EPSRC Tohoku-Cambridge-CNRS Core to Core program Symposium
- Place of Presentation
  仙台
- Year and Date
  2016-11-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Edge states of silicene, germanene and stanene nanoribbons with edge hydrogen terminations2016
- Author(s)
  服部綾美、洗平昌晃、初貝安弘、矢田圭司、白石賢二、佐藤昌利、田仲由喜夫
- Organizer
  Physics of bulk-edge correspondence & its universality From solid state physics to cold atoms International workshop 2016
- Place of Presentation
  京都
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Theoretical Studies on Electronic Structures of Silicene Ribbon and Silicene on Insulator2016
- Author(s)
  白石賢二、服部綾美、棚谷翔、洗平昌晃、大田晃生、黒澤昌志、初貝安弘、佐藤正敏、田仲由喜夫
- Organizer
  International Symposium on 2D Layered Materials and Art: Two Worlds Meet
- Place of Presentation
  マルセイユ、フランス
- Year and Date
  2016-03-23
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 絶縁膜上にあるIV族系二次元結晶の電子状態解析2016
- Author(s)
  洗平昌晃，黒澤昌志，大田晃生，白石賢二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First-Principles Study on Germanene and Stanene on α-Alumina2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  24th International Colloquium on Scanning Probe Microscopy
- Place of Presentation
  ホノルル
- Year and Date
  2016-12-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First Principles Theoretical Investigation of Future Nano-Materials2016
- Author(s)
  白石賢二
- Organizer
  8th International Syposium on Advanced Plasma Science and Its Application for Nitrides and Nanomaterials
- Place of Presentation
  名古屋
- Year and Date
  2016-03-06
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First-principles study on two-dimensional crystals of group IV element on insulating film2015
- Author(s)
  洗平昌晃、大田晃生、黒澤昌志、白石賢二
- Organizer
  23rd International Colloquium on Scanning Probe Microscopy
- Place of Presentation
  ニセコ
- Year and Date
  2015-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 絶縁膜上のIV族系二次元結晶に関する第一原理計算2015
- Author(s)
  洗平昌晃，黒澤昌志，大田晃生，白石賢二
- Organizer
  日本表面科学会第35回表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First Principles Study of Silicene2015
- Author(s)
  白石賢二
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR) 2015
- Place of Presentation
  釜山、韓国
- Year and Date
  2015-06-15
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  K. Shiraishi
- Organizer
  216th Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 蛋白質の立体構造・電子状態・生物機能の間の相関関係の研究2009
- Author(s)
  神谷克政、重田育照、マウロボエロ、白石賢二、押山淳
- Organizer
  第64回日本物理学会年次大会
- Place of Presentation
  立教大学
- Year and Date
  2009-03-28
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance-2009
- Author(s)
  白石賢二
- Organizer
  The 15^<th> International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  白石賢二
- Organizer
  216^<th> Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer2009
- Author(s)
  S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  216th Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  白石賢二
- Organizer
  10^<th>I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] First principles studies on the proton transfer mechanism in cytochrome c oxidase2009
- Author(s)
  白石賢二
- Organizer
  第47回日本生物物理学会年会シンポジウム"Structural chemical studies on physiological functions of proteins"
- Place of Presentation
  徳島市
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts2009
- Author(s)
  K. Shiraishi
- Organizer
  2009 Symposium on VLSI Technologies
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Universal Guiding Principles for Charge-Trap Memories with High Program/Erase Cycle Endurance2009
- Author(s)
  K. Yamaguchi, A. Otake, K. Kobayashi, K. Shiraishi
- Organizer
  2009 IEEE Electron Devices Meeting
- Place of Presentation
  Baltimore, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] イオン性と共有結合性が織りなす新しい材料科学の世界-High-kゲートスタックを振り返って2009
- Author(s)
  白石賢二
- Organizer
  2009年秋季第70回応用物理学会学術講演会シンポジウム、「High-kゲートスタック研究を振り返り、次のステップヘ」
- Place of Presentation
  富山市
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical models for work function control2009
- Author(s)
  白石賢二
- Organizer
  16^<th> biannual conference of Insulating Films on Semiconductors
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics for Si nanowire FET and its fabrication2009
- Author(s)
  白石賢二
- Organizer
  PICE International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  K. Shiraishi
- Organizer
  10th I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts2009
- Author(s)
  白石賢二
- Organizer
  2009 Symposium on VLSI Technologies
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical models for work function control2009
- Author(s)
  K. Shiraishi
- Organizer
  16th biannual conference of Insulating Films on Semiconductors
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance-2009
- Author(s)
  K. Shiraishi, K. Yamaguchi, A. Otake, K. Kobayashi
- Organizer
  The 15th International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics for Si nanowire FET and its fabrication2009
- Author(s)
  K. Shiraishi
- Organizer
  PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
- Place of Presentation
  Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-2008
- Author(s)
  K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki
- Organizer
  214th Meeting of Electrochemical Society
- Place of Presentation
  Pheonix, AZ., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Schottky barrier at Metal/high-k Interface2008
- Author(s)
  T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
- Organizer
  2008 MRS Spring Meeting, H5.5
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Characteristic Nature of High-k Dielectric Interfaces2008
- Author(s)
  K. Shiraishi
- Organizer
  IEEE EDS WIMNACT 2008 on NANOELECRONICS
- Place of Presentation
  Sikkim, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Characteristic Nature of High-K Dielectric Interfaces2008
- Author(s)
  K. Shiraishi
- Organizer
  IEEE EDS WIMNACT 2008 on NANOELECRONICS
- Place of Presentation
  Sikkim, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] MONOS型メモリの電荷蓄積機構の理論的研究2008
- Author(s)
  白石賢二
- Organizer
  応用物理学会シリコンテクノロジー分科会
- Place of Presentation
  東京大学
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Characteristic Nature of High-k Dielectric Interfaces2008
- Author(s)
  K. Shiraishi
- Organizer
  IEEE EDS WIMNACT 2008 on NANOELECRONICS
- Place of Presentation
  Sikkim, India
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Physics of Schottky barrier at Metal/high-k Interfaces2008
- Author(s)
  T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
- Organizer
  2008 MRS Spring Meeting
- Place of Presentation
  San Francisco, USA(invited)
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 数nmサイズSi量子ドットの大規模第一原理計算2008
- Author(s)
  岩田潤一、白石賢二、押山淳
- Organizer
  日本物理学会
- Place of Presentation
  岩手大学
- Year and Date
  2008-09-21
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] タンパク質内環境下における新しいpKaの第一原理計算による提案2008
- Author(s)
  田中朝紀、神谷克政、重田育照、白石賢二
- Organizer
  第46回日本生物物理学会
- Place of Presentation
  福岡
- Year and Date
  2008-12-04
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] MONOS型メモリの電荷蓄積機構の理論的研究2008
- Author(s)
  白石賢二
- Organizer
  応用物理学会シリコンテクノロジー分科会. 表面・界面・シリコン材料研究委員会
- Place of Presentation
  東京大学
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Theoretical investigations on metal/high-k interfaces2008
- Author(s)
  白石賢二
- Organizer
  2008 Intemational Conferonce on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  北京
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical investigations on metal/high-k interfaces2008
- Author(s)
  K. Shiraishi. T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada
- Organizer
  2008 International Conference on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 超分子における機能制御機構の量子構造生物学2007
- Author(s)
  舘野賢・神谷克也・白石賢二・押山淳・ボエロマウロ
- Organizer
  科学研究費補助金特定領域研究「生体超分子構造」第三回ワ-クショップ
- Place of Presentation
  ホテルニュ-アカオ,熱海
- Year and Date
  2007-07-11
- Data Source
  KAKENHI-PROJECT-18054004
[Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji and K. Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D. C., USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] シトクロ-ム酸化酸素の発現機構の理論的解析2007
- Author(s)
  舘野賢・神谷克也・白石賢二・押山淳・ボエロマウロ
- Organizer
  科学研究費補助金特定領域研究「生体超分子構造」公開シンポジウム
- Place of Presentation
  千里ライフサイエンスセンタ,大阪
- Year and Date
  2007-12-18
- Data Source
  KAKENHI-PROJECT-18054004
[Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, and K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K. Shiraishi
- Organizer
  ISSP International Workshop/ Symposium on Foundation and Application of Density Functional Theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-K Gate Stacks Based on Thermodynamics2007
- Author(s)
  K., Shiraishi・Y., Akasaka・G., Nakamura・T., Nakayama・S., Miyazaki・H., Watanabe・A., Ohta・K., Ohmori・T., Chikyow・Y., Nara・K., Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D. C., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K., Shiraishi
- Organizer
  ISSP International Workshiop/Symposium on Foundation and Application of Density Functional Theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Recent Progress in Understanding the Mechanism of Shottoky Barrier Height Formation at Various Interfaces2007
- Author(s)
  K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada
- Organizer
  International Symposium on Theories of Organic-Metal Interfaces 2007
- Place of Presentation
  Suita, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada(Invited)
- Organizer
  211th Meeting of Electrochemical Society, Chicago
- Place of Presentation
  USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics-O Vacancies and Interface Reaction2007
- Author(s)
  K. Shiraishi
- Organizer
  14th International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  Mumbai, India
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K. Shiraishi
- Organizer
  ISSP Int. Sympo. on Foundation and Application of density functional theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Interface Properties of Hf-Based High-K Gate Dielectrics -O Vacancies and Interface Reaction2007
- Author(s)
  K. Shiraishi
- Organizer
  14th International Workshop on the Physics of Semicon ductor Devices
- Place of Presentation
  Mumbai, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics -O Vacancies and Interface Reaction-2007
- Author(s)
  K. Shiraishi
- Organizer
  14th International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  Mumbai, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K. Shiraishi
- Organizer
  ISSP International Workshop/Symposium on Foundation and Application of Density Functional Theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Physics of Metal/High-k Interfaces2006
- Author(s)
  T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
- Organizer
  Fourth International Symposium on High Dielectric Constant Gate Stacks at the 210th Meeting of Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006
- Author(s)
  K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T-J. King Liu, H. Iwai, K. Yamada
- Organizer
  8th International Conference on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] What Happen at High-k Dielectric Interfaces?2006
- Author(s)
  K. Shiraishi, T. Nakayama, Y. Akasaka, H. Takeuchi, S. Miyazaki, N. Umezawa, G. Nakamura, A. Ohta, T. Nakaoka, H. Watanabe, K. Yamabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  San Diego, CA, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical approaches towards elucidation of the cytochrome c oxidase reaction mechanism2006
- Author(s)
  K. Shiraishi
- Organizer
  Int. Workshop on Reaction Mechanisms of Energy Transducing Metalloenzymes
- Place of Presentation
  Hyogo
- Year and Date
  2006-06-17
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006
- Author(s)
  K. Shiraishi
- Organizer
  8th Int. Conf. on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Theoretical approaches for protein function2006
- Author(s)
  K. Shiraishi
- Organizer
  5th East Asian Biophysics Symposium
- Place of Presentation
  Okinawa, Japan
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Theory of Fermi Level Pinning of High-k Dielectrics2006
- Author(s)
  K. Shiraishi, H. Takeuchi, Y. Akasaka, H. Watanabe, N. Umezawa, T. Chikyow, Y. Nara, T. -J. King Liu, K. Yamada
- Organizer
  2006 International Conference on Simulation of Semiconductor Process and Devices
- Place of Presentation
  Monterey, CA, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] What happen at high-k dielectric interfaces?2006
- Author(s)
  K. Shiraishi
- Organizer
  37^<th> IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  San Diego, CA, USA
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Physical Model of Electron and Hole Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) for Embedded Flash Memories2006
- Author(s)
  K. Shiraishi
- Organizer
  2006 International Work-shop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  川崎
- Year and Date
  2006-11-10
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Diamond MOS Interface Properties Studied by XPS/UPS/XANES and C-V Measurements
- Author(s)
  M. Kasu, K. Hirama, K. Harada, M. Imamura, K. Takahashi, K. Shiraishi
- Organizer
  The 7th International Symposium on Surface Science
- Place of Presentation
  松江
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24360124

1. BOERO Mauro (40361315)

# of Collaborated Projects: 7 results

# of Collaborated Products: 25 results
2. OSHIYAMA Atsushi (80143361)

# of Collaborated Projects: 6 results

# of Collaborated Products: 60 results
3. OKADA Susumu (70302388)

# of Collaborated Projects: 6 results

# of Collaborated Products: 17 results
4. BERBER Savas (90375402)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. NAKAYAMA Takashi (70189075)

# of Collaborated Projects: 3 results

# of Collaborated Products: 20 results
6. YAMAUCHI Jun (90383984)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. UCHIDA Kazuyuki (10393810)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
8. IWATA Junichi (70400695)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
9. MASARU Tateno (40291926)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
10. UEMATSU Masashi (60393758)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. AKIYAMA Toru (40362363)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
12. MURAGUCHI Masakazu (90386623)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
13. NOMURA Shintaro (90271527)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
14. ENDOH Tetsuo (00271990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
15. UEDONO Akira (20213374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. CHICHIBU Shigefusa (80266907)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. KAGESHIMA Hiroyuki (70374072)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. WATANABE Takanobu (00367153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. ITO Kohei (30276414)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. KASU Makoto (50393731)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
21. NIWA Masaaki (90608936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. SATO Soshi (80649749)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. YAMABE Kikuo (10272171)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. TAKEDA Kyozaburo (40277851)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. MIHARA Hisakazu (30183966)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 重田育照 (80376483)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. 財満鎭明 (70158947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 宮崎誠一 (70190759)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 牧原克則 (90553561)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. 初貝安弘 (80218495)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
32. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 21 results
33. 中塚理 (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. 田仲由喜夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
35. 佐藤宇史

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
36. 佐藤昌利

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Shiraishi Kenji 白石 賢二

SHIRAISHI Kenji 白石 賢二

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Synthesis of New Group IV Two Dimensional MaterialsPrincipal Investigator

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Theoretical Design of Nano-Device and Nano-Interface by First Principles ApproachPrincipal Investigator

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New development of the theories of nano-interfaces and their application to nano-devicesPrincipal Investigator

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Theoretical studies on the behaviors of impurities in high-k gate dielectrics.Principal Investigator

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Theoretical studies on the basic processes of Si thermal oxidation.Principal Investigator

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Shiraishi Kenji 白石賢二

SHIRAISHI Kenji 白石賢二