SHIRAISHI Kenji 白石賢二

Researcher Number	20334039
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2015 – 2017: 名古屋大学, 未来材料・システム研究所, 教授 2015: 名古屋大学, 工学研究科, 教授 2014: 名古屋大学, 大学院工学研究科, 教授 2013 – 2014: 名古屋大学, 工学(系)研究科(研究院), 教授 2012: 筑波大学, 数理物質科学研究科, 教授 … More 2007 – 2010: University of Tsukuba, 大学院・数理物質科学研究科, 教授 2008: University of Tsukuba, 大学院数理物質科学研究科, 教授 2007 – 2008: 筑波大学, 数理物質科学研究科, 教授 2006: University of Tsukuba, Graduate School of Pure and Applied Sciences, Associate Professor, 大学院数理物質科学研究科, 助教授 2006: 筑波大学, 数理物質化学研究科, 助教授 2004 – 2005: 筑波大学, 大学院・数理物質科学研究科, 助教授 2001 – 2003: 筑波大学, 物理学系, 助教授 Less
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties / 表面界面物性 / Science and Engineering Except Principal Investigator Electronic materials/Electric materials / Science and Engineering / Biological Sciences / Nanomaterials/Nanobioscience / 物理学一般 / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 理論 / 第一原理計算 / 界面 / 半導体 / LSI / Silicon / 欠陥 / シリコン / 界面反応 / 量子効果 … More / ナノ物性 / ナノサイエンス / 多軌道タイトバインディング法 / IV族元素 / ナノリボン / スピン軌道相互作用 / タイトバインディング近似 / 物質合成 / 物質設計 / エッジ状態 / 物質創製 / 二次元物質 / スタネン / ゲルマネン / シリセン / Interface Reaction / High-k dielectrics / Insulating films / Impurity / Defects / Semiconductor / HfO_2 / トランジスタ特性 / Si界面 / High-k絶縁膜 / SiO_2界面 / Si / シリコンナノ構造 / 量子論 / 高誘電率絶縁膜 / 絶縁膜 / 不純物 / 格子欠陥 / Diffusion barrier / Self-diffusion / Impurity diffusion / Interface / Thermal Oxidation / First principles calculations / Theory / 歪み / プロセスシミュレーション / 酸化膜 / 拡散 / シミュレーション / シリコン酸化膜 / 拡散障壁 / 自己拡散 / 不純物拡散 / 熱酸化 / 界面準位 / 絶縁体 / 金属 / 酸化物 / ナノデバイス / 将来デバイス / 炭素ナノチューブ / MOSトランジスタ / 半導体デバイス / 新材料 / ナノ界面 … More Except Principal Investigator 電子状態 / タンパク質 / 量子論 / バイオ物質 / ナノ物質 / 半導体 / 密度汎関数理論 / 計算科学 / 第一原理計算 / プロトン移動 / computational science / Car-Parrinello molecular dynamics / density functional theory / nano-shape / electron state / quantum theory / bio-material / nano-material / 密度汎関数法 / Car-Parrinello法 / Car-Parrinello分子動力学法 / Car-Parrinello分子動力学 / ナノ形状 / Molecular structure / Electronic structure / Synthesis and AFM observation / D.L alternating amino acids rings / Ab initio molecular orbitals theory / Mathematical molecular desigining / Protein nanoring / Protein nanotube / 分子構造と電子構造 / 骨格構造の数理 / ワイドバンドギャップ半導体 / AFM観察 / Fmoc固相合成 / 環状ペプチド / 第一原理電子論 / 蛋白質ナノチューブ / ペプチドナノリング / 高分子合成 / 生体高分子 / 分子構造 / 電子構造 / L体アミノ酸5残基リング / D, L交互アミノ酸リング / 非経験的分子軌道理論 / 数理構造解析 / タンパク質ナノリング / タンパク質ナノチューブ / SiO2 / 絨毯爆撃状絶縁破壊痕 / 経時酸化膜絶縁破壊 / Hard Breakdown / Soft Breakdown / ＴＤＤＢ / ＭＯＳゲート絶縁膜 / 炭化ケイ素 / 断面TEM観察 / ヘテロ界面 / 発光解析 / 結晶欠陥 / GaN on Si(001) / SiC MOS / 透過型電子顕微鏡 / ヘテロエピタキシャル成長 / 結晶性 / ゲート絶縁膜 / 信頼性物理 / 表面・界面物理解析 / 絶縁破壊機構 / 窒化物 / 酸化物 / 電気・電子材料 / 結晶工学 / 電子電気材料 / キャリア伝導 / ダイヤモンド / マイクロ・ナのデバイス / 自己拡散 / シリコン酸窒化 / 計算物理 / マイクロ・ナノデバイス / 表面・界面物性 / CL / MBE / AIN / 非輻射再結合 / 陽電子消滅 / 光学測定 / InN / AlN / GaN / 発光ダイナミックス / 点欠陥 / III族窒化物半導体 / アミドプロトン / ペプチドグループ / シトクローム酸化酵素 / 立体構造 / RNA / 電子状態計算 / 酵素反応 / 触媒反応 / 第一原理分子動力学計算 / ハイブリッド計算 / ナノ構造 / 量子力学 / 表面・界面 / 炭素ナノチューブ / ナノ構造体 / ヘム / チトクローム酸化酵素 / 理論 / 電子移動 Less

Synthesis of New Group IV Two Dimensional MaterialsPrincipal Investigator
- Principal Investigator
  
  Shiraishi Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Fundamental study of high-performance, low-power transistor by hetero interface formation
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Extremely high density carrier doping mechanism on diamond and application to the next generation devices
- Principal Investigator
  
  KASU Makoto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saga University
タンパク質超分子中のプロトン移動機構の電子レベルでの解明
- Principal Investigator
  
  BOERO Mauro
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Biological Sciences
- Research Institution
  University of Tsukuba
Theoretical Design of Nano-Device and Nano-Interface by First Principles ApproachPrincipal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Study of point defects and light-emitting dynamics in group-III nitride semiconductors
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
New development of the theories of nano-interfaces and their application to nano-devicesPrincipal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Control of Silicon Nanostructure Oxidation by Nitrogen Doping
- Principal Investigator
  
  UEMATSU Masashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Keio University
チトクローム酸化酵素におけるプロトンポンプ機構の電子レベルでの解明
- Principal Investigator
  
  BOERO Mauro
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Biological Sciences
- Research Institution
  University of Tsukuba
Quantum Design of Shapes and Functions in Nano- and Bio-Materials
- Principal Investigator
  
  OSHIYAMA Atsushi
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
  University of Tsukuba
Quantum Theory of Shapes and Properties in Nano-and Bio-Materials : Computational Physics Approach
- Principal Investigator
  
  OSHIYAMA Atsushi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  University of Tsukuba
Theoretical studies on the behaviors of impurities in high-k gate dielectrics.Principal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Theoretical studies on the basic processes of Si thermal oxidation.Principal Investigator
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Institute of Physics, University of Tsukuba
First-principles theory of the protein nanotubes
- Principal Investigator
  
  TAKEDA Kyozaburo
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  物理学一般
- Research Institution
  Waseda University

All 2018 2017 2016 2015 2013 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model2018
- Author(s)
  T. Nagura, S. Kawachi, K. Chokawa, H. Shirakawa, M. Araidai, H. Kageshima, T. Endoh, K. Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57
- NAID
  210000148861
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice2018
- Author(s)
  H. Shirakawa, M. Araidai, K. Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57
- NAID
  210000148905
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface2018
- Author(s)
  K. Chokawa, T. Narita, D. Kikuta, T. Kachi, K. Shiozaki, K. Shiraishi
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Pages: 031002-031002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons2017
- Author(s)
  A. Hattori, S. Tanaya, K. Yada, M. Araidai, M. Sato, Y. Hatsugai, K. Shiraishi, and Y. Tanaka
- Journal Title
  
  J. Phys.: Condensed Matter
  
  Volume: 29 Issue: 11 Pages: 115302-111
- DOI
  10.1088/1361-648x/aa57e0
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-15H05853, KAKENHI-PLANNED-15H05855, KAKENHI-PROJECT-26247064, KAKENHI-PROJECT-15H03564, KAKENHI-PROJECT-16K13845, KAKENHI-PLANNED-25107005
[Journal Article] Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifes-pan Archive Memories2017
- Author(s)
  H. Shirakawa, K. Yamaguchi, M. Araidai, K. Kamiya, K. Shiraishi
- Journal Title
  
  IEICE Transaction on Electronics
  
  Volume: E100 Pages: 928-933
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03564
[Journal Article] First-principles study on adsorption structure and electronic state of stanene on α-alumina surface2017
- Author(s)
  Araidai Masaaki、Kurosawa Masashi、Ohta Akio、Shiraishi Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 9 Pages: 095701-095701
- DOI
  10.7567/jjap.56.095701
- NAID
  210000148278
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17551, KAKENHI-PROJECT-15H03564
[Journal Article] Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule2013
- Author(s)
  Y. Takagi, K. Shiraishi, M. Kasu, H. Sato
- Journal Title
  
  Surface Science
  
  Volume: 609 Pages: 203-206
- DOI
  10.1016/j.susc.2012.12.015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360124
[Journal Article] A massively-parallel electronic-structure calculations based on real-space density functional theory2010
- Author(s)
  J-I, Iwata, D. Takahashi, A. Oshiyama, T. Boku, K. Shiraishi, S. Okada, K. Yabana
- Journal Title
  
  J. Comp. Phys. 229
  
  Pages: 2339-2363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article]2010
- Author(s)
  Y. Sakurai, J-I Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys. 45
  
  Pages: 14001-14001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] First-Prinicple Study on In-related Nitride" Smiconductors2009
- Author(s)
  T. Obata, J.-I. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Cryst. Growth (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Significant change in electronic structures of heme upon reduction by strong coulomb repulsion between Fe d electrons2009
- Author(s)
  K. Kamiya, S. Yamamoto, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Phys. Chem. B 113
  
  Pages: 6886-6886
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] A Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe $d$ Electrons2009
- Author(s)
  K. Kamiya, S. Yamamoto, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First principles studies on In-related nitride semiconductors2009
- Author(s)
  T. Obata, J-I. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Cryst. Growth (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Significant Change in Electronic Structures of Heme Upon Reduction by Strong Coulomb Repulsion between Fe d Electrons2009
- Author(s)
  K. Kamiya, S. Yamamoto, K. Shiraishi, A. Oshiyama
- Journal Title
  
  J. Phys. Chem. B 113
  
  Pages: 6866-6872
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Theoretical studies on the charge trap mechanism of MONOS type memories - Relationship between atomistic information and program/erase actions2009
- Author(s)
  A. Otake, K. Yamaguchi, K. Kobayashi, K. Shiraishi
- Journal Title
  
  Microelectronic. Eng. 86
  
  Pages: 1849-1851
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] 'Chemical Controllability of Charge States of Nitrogen-Related Defects in HfO$_x$N$ y$ : First-Principles Calculations2008
- Author(s)
  N. Umezawa, K. Shiraishi, Y. Akasaka, A. Oshiyama, S. Inumiya, S. Miyazaki, K. Ohmori, T. Chikyow, T. Ohno_ K. Yamahe. Y. Nara.
- Journal Title
  
  Physical Review B 77
  
  Pages: 165130-165130
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Ge vacancies at Ge/Si interfaces : stress enhanced pairing distrotion2008
- Author(s)
  K. Takai, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Phys. Rev. B77
  
  Pages: 45308-45308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Large-scale density-functional calculations on Si divacancies2008
- Author(s)
  J. -I. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Phys. Rev. B77
  
  Pages: 115208-115208
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Possible proton transfer mechanism through peptide groups in the H-pathway of the bovine cytochrome c oxidas2008
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Biochimica et Biophysica Acta-Bioenergetics 1777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Large-scale density-functional calculations on silicon divacancies.2008
- Author(s)
  J. Iwata, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Physics Beview B77
  
  Pages: 115280-115280
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing dist ortion2008
- Author(s)
  K., Takai・K., Shiraishi・A., Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Ge Vacancies at Ge/Si Interfacee: Stress Enhanced Pairing Distrotion2008
- Author(s)
  K. Takai, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Physics Beview B77
  
  Pages: 45308-45308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Generation of Acceptor Levels in Ge by the Uniaxial Strain-A Theoretical Approach-2008
- Author(s)
  K. Takai, K. Shiraishi and A. Oshiyama
- Journal Title
  
  ECS Trans 16
  
  Pages: 261-266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Ge vacancies at Ge/Si interfaces: Stress-enhanced pairing distortion2008
- Author(s)
  K. Takai, K. Shiraishi, A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] 金属/絶縁体界面の統一理論2008
- Author(s)
  白石賢二、中山隆史
- Journal Title
  
  表面科学 29
  
  Pages: 92-98
- NAID
  10021165483
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level2008
- Author(s)
  M. Muraguchi, Y. Takada, S. Nomura, K. Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7807-7811
- NAID
  120007131216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices2008
- Author(s)
  Y. Takada, M. Muraguchi, K. Shiraishi
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6199-6202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Chemical controllability of charge states of nitrogen-related defects in HfOxNy : First-principles calculations2008
- Author(s)
  N. Umezawa, K. Shiraishi, Y. Akasaka, A. Oshiyama, 他8名
- Journal Title
  
  Phys. Rev. B77
  
  Pages: 165130-165130
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures2007
- Author(s)
  K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Novel Mechanism for Proton Transfer in Bovine Cytochrome c Oxidase2007
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of Physics: Condensed Matter 19
  
  Pages: 365220-365220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics2007
- Author(s)
  N. Umezawa, K. Shiraishi, K. Torii, et. al.
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76(15) : Art. No. 155436 OCT
- NAID
  120007139048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Possible mechanism of proton transfer through peptide groups in the H-pathway of the Bovine cytochrome c oxidase.2007
- Author(s)
  Kamiya, K.・Boero, M.・Tateno, M.・Shiraishi, K.・Oshiyama, A.
- Journal Title
  
  J. Ame. Chem. Soc. 129
  
  Pages: 9663-9663
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N., Umezawa・K., Shiraishi・S., Sugino, et. al.
- Journal Title
  
  APPLIED PHYSICS LETTERS 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Possible mechanism of proton transfer through peptideg Groups in the H pathway of the Bovine Cytochrome c Oxidase2007
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Ame. Chem. Soc. 129
  
  Pages: 9663-9663
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76(15)
  
  Pages: 155436-155436
- NAID
  120007139048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-based High-k Dielectrics2007
- Author(s)
  N. Umezawa, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, H. Watanabe, K. Yamabe, T. Ohno, K. Yamaba, and Y. Nara
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子間混晶化2007
- Author(s)
  中山隆史、白石賢二
- Journal Title
  
  表面科学 28
  
  Pages: 28-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films2007
- Author(s)
  T., ・Endoh・K., Hirose・K., Shiraishi
- Journal Title
  
  IEICE TRANSACTIONS ON ELECTRONICS E90C
  
  Pages: 955-961
- NAID
  10018216417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-based High-k Dielectrics2007
- Author(s)
  N., Umezawa・K., Shiraishi・K., Torii・M., Boero, et. al.
- Journal Title
  
  IEEE Electron Dev. Lett. 28
  
  Pages: 363-363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Quantum effects in a cylindrical carbon-nanotube capacito2007
- Author(s)
  K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
- Journal Title
  
  JOURNAL OF PHYSICS-CONDENSED MATTER 19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Gate-component-induced high-k compositional change for dual-metal/dual-high-k CMOS-Cost-effective approach to utilize the effective work function stabilization by pinning-2007
- Author(s)
  M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, S. Miyazaki, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara, and Y. Ohji.
- Journal Title
  
  Technical Digest of 2007 Symposium on VLSI Technology
  
  Pages: 66-67
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Possible Mechanism of Proton Transfer through Peptide Groups in the H-pathway of the Bovine Cytochrome c Oxidase2007
- Author(s)
  K. Kamiya, M. Boero, M. Tateno, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of the American Chemical Society 129
  
  Pages: 9663-9673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N, Umezawa, K, Shiraishi, et.al.
- Journal Title
  
  APPLIED PHYSICS LETTERS 91(13) : Art. No. 132904 SEP
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Quantum effects in a cylindrical carbon-nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
- Journal Title
  
  OURNAL OF PHYSICS-CONDENSED MATTER 19 (36) : Art. No. 365218
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based High-k dielectrics2007
- Author(s)
  N. Umezawa, K. Shiraishi, K. Torii, M. Boero, 他6名
- Journal Title
  
  IEEE Electron Device Letters 28
  
  Pages: 363-363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N. Umezawa, K. Shiraishi, S. Sugino, et. al.
- Journal Title
  
  APPLIED PHYSICS LETTERS 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K., Uchida・S., Okada・K., Shiraishi・A., Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76
- NAID
  120007139048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation2007
- Author(s)
  N, Umezawa, K, Shiraishi, et al
- Journal Title
  
  APPLIED PHYSICS LETTERS 91 (13) : Art. No. 132904
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum effects in double- walled carbon nanotubec capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Phys. Rev. B76
  
  Pages: 155436-155436
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based high-k dielectrics2007
- Author(s)
  N., Umezawa・K., Shiraishi・K., Torii, et. al.
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Guiding principle of energy level controllability of silicon dangling bonds in HfSiON2007
- Author(s)
  N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
- Journal Title
  
  JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46
  
  Pages: 1891-1894
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum Effects in Cylindrical Carbon-Nanotube Capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Journal of Physics: Condensed Matter 19
  
  Pages: 365218-365218
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films2007
- Author(s)
  T. Endoh, K. Hirose, K. Shiraishi
- Journal Title
  
  IEICE TRANSACTIONS ON ELECTRONICS E90C
  
  Pages: 955-961
- NAID
  110007519658
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Ab initio-based approach on initial growth kinetics of GaN on GaN(001)2007
- Author(s)
  Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi and K. Kakimoto
- Journal Title
  
  JOURNAL OF CRYSTAL GROWTH 301
  
  Pages: 75-78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] First-Principles Molecular Dynamics Study of Proton Transfer Mechanism in Bovine Cytochromec Oxidase.2007
- Author(s)
  Kamiya, K.・Boero, M.・Tateno, M.・Shiraishi, K.・Oshiyama, A.
- Journal Title
  
  Journal of Physics 19
  
  Pages: 365220-365220
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Quantum Effects in Double-Walled Carbon Nanotube Capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Physics Beview B76
  
  Pages: 155436-155436
- NAID
  120007139048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Quantum effects in a double-walled carbon nanotube capacitor2007
- Author(s)
  K. Uchida, S. Okada, K. Shiraishi, and A. Oshiyama
- Journal Title
  
  PHYSICAL REVIEW B 76 (15) : Art. No. 155436
- NAID
  120007139048
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics2007
- Author(s)
  N., Umezawa・K., Shiraishi・S., Miyazaki, et. al.
- Journal Title
  
  JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46
  
  Pages: 3507-3509
- NAID
  40015421738
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks2006
- Author(s)
  K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, T. Arikado, Y. Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-310
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J.Phys.Chem B 110
  
  Pages: 4443-4450
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO_2 related High-k Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Real-space Density-functional Calculations for Si Divacancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B (In press)
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Real-space Density-Functional Cal- culations for Si Divacancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 196-196
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Enol-to-keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics Part 1 45
  
  Pages: 694-694
- NAID
  40007140212
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Chem B 110
  
  Pages: 4443-4450
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-395
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe et al.
- Journal Title
  
  Jpn. J. Appl. Phys. Part2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Ymada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-392
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura
- Journal Title
  
  Jpn. J. Appl. Phys Part 2, 45
- NAID
  10018461127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks2006
- Author(s)
  Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Technical Digest of 2006 Symposium on VLSI Tech.(Honolulu, USA)
  
  Pages: 206-206
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Effect of N atom doping on dielectric constants of Hf-based gate oxides2006
- Author(s)
  H.Momida, T.Hamada, T.Yamamoto, T.Uda, N.Umezawa, T.Chikyow, K.Shiraishi, T.Ohno
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 112903-112903
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Unique behavior of F-centers in high-k Hf-based Oxide2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-394
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Jpn. J. Appl. Phys. Part 2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures - Remarkable Advantages of La_2O_3 over HfO_2 -2006
- Author(s)
  K.Ohmori, P.Ahmet, K.Shiraishi, K.Yamabe, H.Watanabe, Y.Akasaka, N.Umezawa, K.Nakajima, M.Yoshitake, T.Nakayama, K.-S.Chang, K.Kakushima, Y.Nara, M.L.Green, H.Iwai, K.Yamada, T.Chikyow
- Journal Title
  
  ECS Transactions 3(3)
  
  Pages: 351-351
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Enhances Si and B diffusion in Smiconductir-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M, Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, K. Nakamura
- Journal Title
  
  Jpn. J. Appl. Phys. 45
- NAID
  10018461127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe et al.
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Physical Model of Electron and Hole Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) for Embedded Flash Memories2006
- Author(s)
  Kenji Shiraishi
- Journal Title
  
  Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
  
  Pages: 135-136
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Enhanced Si and B diffusion in Semiconductor-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] New theory of effective work functions at metal/high-k dielectric interfaces : Application to metal/high-k HfO_2 and La_2O_3 dielectric interfaces2006
- Author(s)
  K. Shiraishi, 他12名
- Journal Title
  
  ECS Transactions 2
  
  Pages: 25-25
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Characterization of HfSiON gate dielectrics using monoenergetic positoron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, N.Umezawa, A.Hamid, T.Chikyow, T.Ohdaira, M.Muramatsu, R.Suzuki, S.Inumiya, S.Kamiyama, Y.Akasaka, Y.Nara, K.Yamada
- Journal Title
  
  J.Appl.Phys. 99
  
  Pages: 54507-54507
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Enol-to-Keto tautomerism of peptide groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Chem. B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-18054004
[Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks"2006
- Author(s)
  K.Shiraishi
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-310
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-392
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B 110
  
  Pages: 4433-4433
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces -2006
- Author(s)
  K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 25-25
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Extensive Studies for Effects of Nitrogen Incorporation into Hf-based High-k Gate Dielectricxs2006
- Author(s)
  N.Umezawa, K.Shiraishi, H.Watanabe, K.Torii, Y.Akasaka, S.Inumiya, M.Boero, A.Uedono, S.Miyazaki, T.Ohno, T., Chikyow, K.Yamabe, Y.Nara, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 63-63
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Oxygen-Vacancy-Induced Threshold Voltage Shifts in Hf-Related High-k Gate Stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-305
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Real-space Density-Functional Cal- culations for Si Divacancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 196-199
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enhanced Si and B diffusion in Smiconductir-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretcial studies on the physical properties of polu-Si and metal gate/HfO_2 related high-k dielectrics interfaces2006
- Author(s)
  K. Shiraishi, 他8名
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Physics of Metal/High-k Interfaces2006
- Author(s)
  T.Nakayama, K.Shiraishi, S.Miyazaki, Y.Akasaka, T.Nakaoka, K.Torii, A.Ohta, P.Ahmet, K.Ohmori, N.Umezawa, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 3(3)
  
  Pages: 129-129
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces-Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces-2006
- Author(s)
  K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
- Journal Title
  
  ECS Transactions 2(1)
  
  Pages: 25-25
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks2006
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado, Y.Nara
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 305-310
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation2006
- Author(s)
  A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
- Journal Title
  
  J.Appl.Phys. 100
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Enol-to-keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Journal of Physical Chemistry B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Introduction of defects into HfO_2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation2006
- Author(s)
  A.Uedono, T.Naito, T.Otsuka, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, T.Chikyow, Y.Akasaka, S.Kamiyama, Y.Nara, Yamada
- Journal Title
  
  J. Appl. Phys. 100
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metla Gates/HfO_2 related High-K Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enhanced Si and B diffusion in Smiconductir-Grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-270
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Real-space Density-Functional Cal-culations for Si Divacancies with Large Size Super cell Models2006
- Author(s)
  J.I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 196-196
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metla Gates/HfO_2 related High-k Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, et al.
- Journal Title
  
  Jpn.J.Appl.Phys. Part 2, 45
- NAID
  10018461127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Mechanism of oxide deformation during silicon thermal oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 407-410
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] THEORETICAL STUDIES ON THE PHYSICAL PROPERTIES OF POLY-SI AND METAL GATES/HfO_2 RELATED HIGH-K DIELECTRICS INTERFACES2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Yasuo Nara
- Journal Title
  
  ECS Transactions 1(5)
  
  Pages: 479-479
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi.
- Journal Title
  
  Jap.J.of Appl.Phys. 45
  
  Pages: 694-699
- NAID
  40007140212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Enol-to-keto tautomerism of peptide groups2006
- Author(s)
  K. Kamiya, M. Boero, K. Shiraishi and A. Oshiyama
- Journal Title
  
  J. Phys. Chem. B110
  
  Pages: 4443-4443
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Chem. B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Enol-to-Keto Tautomerism of Peptide Groups2006
- Author(s)
  K.Kamiya, M.Boero, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J.Phys.Chem.B 110
  
  Pages: 4443-4443
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks2006
- Author(s)
  Y.Akasaka, K.Shiraishi, N.Umezawa, O.Ogawa, T.Kasuya, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Technical Digest of 2006 Symposium on VLS1 Tech., Honolulu, USA
  
  Pages: 206-206
- Data Source
  KAKENHI-PROJECT-18360017
[Journal Article] Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-275
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Unique Behavior of F-centers in High-k Hf-based Oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, et al.
- Journal Title
  
  Jpn. J. Appl. Phys. Part 2 45
- NAID
  10018461127
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical Studies on the Physical Properties of Poly-Si and Metla Gates/HfO_2 related High-k Dielectric Interfaces2006
- Author(s)
  K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  ECS Transactions 1
  
  Pages: 479-479
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning2006
- Author(s)
  Y.Akasaka, G.Nakamura, K.Shiraishi, N.Umezawa, K.Yamabe, O.Ogawa, M.Lee, T.Amiaka, T.Kasuya, H.Watanabe, T.Chikyow, F.Ootsuka, Y.Nara, K.Nakamura
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2 45
- NAID
  10018461127
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Real-space Density-Functional Calculations for Si Deviancies with Large Size Supercell Models2006
- Author(s)
  J.-I.Iwata, A.Oshiyama, K.Shiraishi
- Journal Title
  
  Physica B
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  J. Chem. Phys 122
  
  Pages: 224101-224101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Japanease Journal of Applied Physics PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
- Journal Title
  
  Jap.J.Appl.Phys.PART 2 44
- NAID
  10016856711
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.PART 1 44
  
  Pages: 7756-7759
- NAID
  10016870318
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies on metal induced gap states(MIGS) at metal/high-k HfO_2 interfaces2005
- Author(s)
  T.Nakaoka, K.Shiraishi, Y.Akasaka, T.Chikyow, K.Yamada, Y.Nara
- Journal Title
  
  Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan
  
  Pages: 860-861
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs (n 11) A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Appl.Surf.Sci. 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-principles study of excess Si-atom stability around Si oxide/Si interfaces2005
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 389-390
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  Journal of Chemical Physics 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005
- Author(s)
  K.Shiraishi
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting, Washington D.C.
  
  Pages: 43-46
- NAID
  110004382125
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  Journal of Chemical Physics 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jpn.J.Appl.Phys.PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Microscopic Effect of Nitrogen Doping on Dielectric Constant of Hf-silicate2005
- Author(s)
  H.Momida, T.Hamada, T.Yamamoto, T.Uda, N.Umezawa, K.Shiraishi, T.Chikyow, T.Ohno
- Journal Title
  
  Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan
  
  Pages: 488-489
- NAID
  10022542324
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Reliability degradation model of HfO_2 related high-k gate dielectrics2005
- Author(s)
  K.Torii, K.Shiraishi, S.Miyazaki, K.Yamada
- Journal Title
  
  Ouyobutsuri 74
  
  Pages: 1211-1216
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Letters 26
  
  Pages: 722-722
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics, PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.shiraishi, T.Chikyow
- Journal Title
  
  J.Chem.Phys. 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-kdielectrics2005
- Author(s)
  N.Umezawa, K.shiraishi et al.
- Journal Title
  
  Appl.Phys.Lett. 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Impact of Electrode-side Chemical Structures on Electron Mobility in Metal/HfO2 MISFETs with sub-1nm EOT2005
- Author(s)
  Y.Akasaka, K.Miyagawa, T.Sasaki, K.Shiraishi, S.Kamiyama, O.Ogawa, F.Ootsuka, Y.Nara
- Journal Title
  
  Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan
  
  Pages: 228-229
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to phase diagram calculations for GaAs(001) surfaces2005
- Author(s)
  T.Ito, H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 488-488
- NAID
  130004438978
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-kdieletrics interfaces - Guiding principles for gate metal selection.2005
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Jap. J. Appl. Phys. PART 2 44
- NAID
  10016856711
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Atomic Processes at and near Silicon/Silicon Dioxide interfaces2005
- Author(s)
  K.Shiraishi
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 427-430
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Impact of Electrode-side Chemical Structures on Electron Mobility in Metal/HfO_2 MISFETs with sub-1nm EOT2005
- Author(s)
  Y.Akasaka, K.Miyagawa, T.Sasaki, K.Shiraishi, S.Kamiyama, O.Ogawa, F.Ootsuka, Y.Nara
- Journal Title
  
  Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan
  
  Pages: 228-228
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Applied Physics Letters 86
  
  Pages: 143507-143507
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Japanese Journal of Applied Physics, PART 2 44
- NAID
  10016856711
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection2005
- Author(s)
  K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
  
  Pages: 43-43
- NAID
  110004382125
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - Guiding principles for gate metal selection,2005
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting
- NAID
  110004382125
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] First Principles Studies on the Novel Intrinsic Effect of Nitrogen Atoms for Reduction in Gate Leakage Current through Hf-based High-k Dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, et al.
- Journal Title
  
  Applied Physics Letters (in press)
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] New electron states that float on semiconductor and metal surface2005
- Author(s)
  S. Okada, Y. Enomoto, K. Shiraishi and A. Oshiyama
- Journal Title
  
  Surf. Sci. 585
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n 1 1)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Appl.Surf.Sci. 244
  
  Pages: 178-178
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Letters 26
  
  Pages: 722-722
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Appl. Phys. Lett 86
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  Journal of Chemical Physics 122
  
  Pages: 224101-224101
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Jap.J.Appl.Phys.PART 2 44
- NAID
  10016856711
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Effect of nitrogen on diffusion in silicon oxynitride2005
- Author(s)
  M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Japanease Journal of Applied Physics PART 1 44
  
  Pages: 7756-7756
- NAID
  10016870318
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikow, K.Torii, K.Yamabe, H.Kitajima, T.Arikado
- Journal Title
  
  Appl.Phys.Lett. 86
  
  Pages: 143507-143507
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces -Guiding principles for gate metal selection-2005
- Author(s)
  K.Shiraishi, Y.Akasaka, S.Miyazaki, T.Nakayama, T.Nakaoka, G.Nakamura, K.Torii, H.Furutou, A.Ohta, P.Ahmet, K.Ohmori, H.Watanabe, T.Chikyow, M.L.Green, Y.Nara, K.Yamada
- Journal Title
  
  Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
  
  Pages: 43-46
- NAID
  110004382125
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n 11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] A practical treatment for the three-body interactions in the transcorrelated variational Monte Carlo method : Application to atoms from lithium to neon2005
- Author(s)
  N.Umezawa, S.Tsuneyuki, T.Ohno, K.Shiraishi, T.Chikyow
- Journal Title
  
  J.Chem.Phys 122
  
  Pages: 224101-224101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n 1 1)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Appl. Surf. Sci 244
  
  Pages: 178-178
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surface Science 585
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] New Electron States that Float on semiconductor and Metal Surface2005
- Author(s)
  S.Okada, Y.Enomoto, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Surf.Sci. 585
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
- Journal Title
  
  Japanease Journal of Applied Physics PART 2 44
- NAID
  10016856711
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Role of nitrogen incorporation into Hf-based high-k gate dielectrics for termination of local current leakage paths2005
- Author(s)
  H.Watanabe, S.Kamiyama, N.Umezawa, K.Shiraishi, S.Yoshida, Y.Watanabe, T.Arikado, T.Chikyow, K.Yamada, K.Yasutake
- Journal Title
  
  Japanease Journal of Applied Physics PART 2 44
- NAID
  10016856711
- Data Source
  KAKENHI-PROJECT-17053002
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Letters 26
  
  Pages: 722-722
- Data Source
  KAKENHI-PROJECT-17064002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi et al.
- Journal Title
  
  Appl.Phys.Lett. 86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D_2O-ALD2005
- Author(s)
  K.Torii, T.Kawahara, K.Shiraishi
- Journal Title
  
  IEEE Electron Device Lett. 26
  
  Pages: 722-724
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
- Journal Title
  
  Tech.Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
  
  Pages: 108-109
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] 多くの現象を説明できる新モデル「酸素空孔説」を提案2004
- Author(s)
  白石賢二
- Journal Title
  
  日経マイクロデバイス 10月号
  
  Pages: 55-58
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-k MISFET with p^+poly-Si Gates -A Theoretical Approach2004
- Author(s)
  K.Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. Part 2, Express Letter 43
- NAID
  10013787295
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Density Functional Calculations and Eigenchannel Analyses for Electron Transport in Al and Si Atomic Wires2004
- Author(s)
  S.Okano, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Phys.Rev. B, 69
  
  Pages: 45401-45401
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Band Structures of Wurtzite InN and Ga{1-x}InxN by All-Electron GW Calculation2004
- Author(s)
  M.Usuda, N.Hamada, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  210000057192
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Proposal of a new O-vacancy model that can explain many phenomena2004
- Author(s)
  K.Shiraishi, K.Yamada, T.Chikyow
- Journal Title
  
  Nikkei Micro Device Vol.10
  
  Pages: 55-58
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Electronic Structure of Polyglycine and Active sites of Cytochrome c Oxidase2004
- Author(s)
  K.Kamiya, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J.Phys.Soc.Jpn 73
  
  Pages: 3198-3208
- NAID
  110001979277
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces2004
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.Part 1 43
  
  Pages: 8223-8226
- NAID
  10014216586
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-k MISFET with p+poly-Si Gates -A Theoretical Approach2004
- Author(s)
  K.Shiraishi, K.Yamada, K.Torii, Y.Akasaka, K.Nakajima, M.Konno, T.Chikyow, H.Kitajima, T.Arikado
- Journal Title
  
  Jpn.J.Appl.Phys.Part 2, Express Letter 43
- NAID
  10013787295
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physical Model of BTI, TDDB, and SILC in HfO_2 based high-k gate dielectrics2004
- Author(s)
  K.Torii, K.Shiraishi, et al.
- Journal Title
  
  Technical Digest of 2004 IEEE International Electron Device Meeting, San Francisco, USA
  
  Pages: 129-132
- NAID
  110003311212
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Band Structures of Wurtzite InN and Ga{1-x}InxN by All-Ele ctron GW Calculation2004
- Author(s)
  M.Usuda, N.Hamada, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004
- Author(s)
  S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, Y.Takahashi, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys. 43
  
  Pages: 7837-7842
- NAID
  10014215041
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Electronic Structure of Polyglycine and Active sites of Cytochrome c Oxidase2004
- Author(s)
  K.Kamiya, K.Shiraishi, A.Oshiyama
- Journal Title
  
  J. Phys. Soc. Jpn 73
  
  Pages: 3198-3208
- NAID
  110001979277
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
- Author(s)
  K.Shiraishi
- Journal Title
  
  Tech. Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
  
  Pages: 108-109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Density Functional Calculations and Eigenchannel Analyses for Electron Transport in Al and Si Atomic Wires2004
- Author(s)
  S.Okano, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Phys.Rev.B 69
  
  Pages: 45401-45401
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] Simulation of correlated diffusion of Si and B in thermally grown Si O_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
- Journal Title
  
  J.Appl.Phys. 96
  
  Pages: 5513-5519
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physical model of BTI, TDDB, and SILC in HfO_2-based high-k dielectrics2004
- Author(s)
  K.Torii, K.Shiraishi, S.Miyazaki, K.Yamabe, M.Boero, T.Chikyow, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Tech.Digest of 2004 IEEE International Electron Device Meeting (San Francisco, USA, December 13-15, 2004)
  
  Pages: 129-132
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach2004
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013787295
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Physics in Fermi Level Pinning at the PolySi/Hf-based High-k Oxide Interface2004
- Author(s)
  K.Shiraishi et al.
- Journal Title
  
  Technical Digest of 2004 Symposium on VLST Technology, Honolulu, USA
  
  Pages: 108-109
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Correlated diffusion of silicon and boron in thermally grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
- Journal Title
  
  Appl.Phys.Lett. 85
  
  Pages: 221-223
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Jpn.J.Appl.Phys.Part 1 43
  
  Pages: 7847-7852
- NAID
  10014215085
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Density Functional Calculations and Eigenchannel Analyses for Electron Transport in Al and Si Atomic Wires2004
- Author(s)
  S.Okano, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Phys. Rev. B 69
  
  Pages: 45401-45401
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Journal Article] An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides
- Author(s)
  N.Umezawa, K.Shiraishi, Y.Akasaka, S.Inumiya, A.Uedono, S.Miyazaki, T.Chikyow, T.Ohno, Y.Nara, K.Yamada
- Journal Title
  
  Trans.Material Res.Soc.Jpn. 31
  
  Pages: 129-132
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] The Role of Nitrogen Incorporation in Hf-based High-k Dielectrics : Reduction in Electron Charge Traps
- Author(s)
  N.Umezawa, K.Shiraishi, K.Torii, M.Boero, T.Chikyow, H.Watanabe, K.Yamabe, T.Ohno, K.Yamada, Y.Nara
- Journal Title
  
  Proceedings of 35^<th> European Solid-State Device Research Conference (ESSDERC 2005)(12-16 September 2005, Grenoble, France.)
  
  Pages: 201-204
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Band Structures of Wurtzite InN and Ga{1-x}InxN by All-Electron GW Calculation
- Author(s)
  M.Usuda, N.Hamada, K.Shiraishi, A.Oshiyama
- Journal Title
  
  Jpn.J.Appl.Phys. 43
- NAID
  210000057192
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16310083
[Presentation] ゲルマネンの水素吸脱着に関する第一原理計算2018
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会第73回年次大会
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 水素終端シリセン・ゲルマネンスタネンナノリボンのエッジ状態2017
- Author(s)
  服部綾実，棚谷翔，矢田圭司，洗平昌晃，佐藤昌利，初貝安弘，白石賢二，田仲由喜夫
- Organizer
  第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Place of Presentation
  名古屋
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] ELECTRONIC STRUCTURES OF GROUP IV TWO DIMENSIONAL MATERIALS2017
- Author(s)
  K. Shiraishi、A. Hattori、S. Tanaya、K. Yada、M. Araidai、Y. Hatsugai、M. Sato、Y. Tanaka
- Organizer
  13th International Conference on Diffusion in Solids and Liquids (DSL 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Electronic States of Silicene and Germanene on Amorphous Alumina2017
- Author(s)
  M. Araidai、M. Kurosawa、A. Ohta、K. Shiraishi
- Organizer
  International Conference on Solid State Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Theoretical Studies on Group IV Two Dimensional Material2017
- Author(s)
  K. Shiraishi
- Organizer
  Japan-India Seminar
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] IV族系二次元物質の理論的研究2017
- Author(s)
  白石賢二
- Organizer
  日本物理学会第72回年次大会
- Place of Presentation
  吹田市
- Year and Date
  2017-03-17
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First-principles study on adsorption structures and electronic states of stanene and germanene on alumina2017
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  Special Meeting in JSPS Brain Circulation Program
- Place of Presentation
  名古屋
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Edge states of silicene, germanene and stanene nanoribbons with edge hydrogen terminations2016
- Author(s)
  服部綾美、洗平昌晃、初貝安弘、矢田圭司、白石賢二、佐藤昌利、田仲由喜夫
- Organizer
  Physics of bulk-edge correspondence & its universality From solid state physics to cold atoms International workshop 2016
- Place of Presentation
  京都
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 絶縁膜上にあるIV族系二次元結晶の電子状態解析2016
- Author(s)
  洗平昌晃，黒澤昌志，大田晃生，白石賢二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Edge states of silicene, germanene and stanene nanoribbons with edge hydrogen terminations2016
- Author(s)
  服部綾美、洗平昌晃、初貝安弘、矢田圭司、白石賢二、佐藤昌利、田仲由喜夫
- Organizer
  Quantum Materials Program Meeting
- Place of Presentation
  トロント
- Year and Date
  2016-04-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 水素終端シリセン，ゲルマネン，スタネンリボンにおけるエッジ状態2016
- Author(s)
  服部綾実，洗平昌晃，初貝安弘，矢田圭司，白石賢二，佐藤昌利，田仲由喜夫
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  東北学院大学泉キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Electronic States of two-dimensional crystals of group IV element on α-Al2O3(0001) surfaces2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures,
- Place of Presentation
  ローマ
- Year and Date
  2016-10-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Theoretical Investigation of Group IV Two Dimensional Materials2016
- Author(s)
  白石賢二、服部綾美、棚谷翔、矢田圭司、洗平昌晃、初貝安弘、佐藤昌利、田仲由喜夫
- Organizer
  JSPS-EPSRC Tohoku-Cambridge-CNRS Core to Core program Symposium
- Place of Presentation
  仙台
- Year and Date
  2016-11-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First-Principles Study on Germanene and Stanene on α-Alumina2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  24th International Colloquium on Scanning Probe Microscopy
- Place of Presentation
  ホノルル
- Year and Date
  2016-12-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Edge states of silicene, germanene and stanene nanoribbons with edge hydrogen terminations2016
- Author(s)
  服部綾美、洗平昌晃、初貝安弘、矢田圭司、白石賢二、佐藤昌利、田仲由喜夫
- Organizer
  Frontiers in Quantum Materials and Devices Workshop
- Place of Presentation
  和光市
- Year and Date
  2016-06-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First Principles Theoretical Investigation of Future Nano-Materials2016
- Author(s)
  白石賢二
- Organizer
  8th International Syposium on Advanced Plasma Science and Its Application for Nitrides and Nanomaterials
- Place of Presentation
  名古屋
- Year and Date
  2016-03-06
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Theoretical Studies on Electronic Structures of Silicene Ribbon and Silicene on Insulator2016
- Author(s)
  白石賢二、服部綾美、棚谷翔、洗平昌晃、大田晃生、黒澤昌志、初貝安弘、佐藤正敏、田仲由喜夫
- Organizer
  International Symposium on 2D Layered Materials and Art: Two Worlds Meet
- Place of Presentation
  マルセイユ、フランス
- Year and Date
  2016-03-23
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] 絶縁膜上のIV族系二次元結晶に関する第一原理計算2015
- Author(s)
  洗平昌晃，黒澤昌志，大田晃生，白石賢二
- Organizer
  日本表面科学会第35回表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First-principles study on two-dimensional crystals of group IV element on insulating film2015
- Author(s)
  洗平昌晃、大田晃生、黒澤昌志、白石賢二
- Organizer
  23rd International Colloquium on Scanning Probe Microscopy
- Place of Presentation
  ニセコ
- Year and Date
  2015-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] First Principles Study of Silicene2015
- Author(s)
  白石賢二
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR) 2015
- Place of Presentation
  釜山、韓国
- Year and Date
  2015-06-15
- Invited
- Data Source
  KAKENHI-PROJECT-15H03564
[Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts2009
- Author(s)
  白石賢二
- Organizer
  2009 Symposium on VLSI Technologies
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer2009
- Author(s)
  S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  216th Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  白石賢二
- Organizer
  10^<th>I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance-2009
- Author(s)
  白石賢二
- Organizer
  The 15^<th> International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical models for work function control2009
- Author(s)
  白石賢二
- Organizer
  16^<th> biannual conference of Insulating Films on Semiconductors
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Universal Guiding Principles for Charge-Trap Memories with High Program/Erase Cycle Endurance2009
- Author(s)
  K. Yamaguchi, A. Otake, K. Kobayashi, K. Shiraishi
- Organizer
  2009 IEEE Electron Devices Meeting
- Place of Presentation
  Baltimore, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Atomistic Studies for MONOS-Type Charge Trap Memories -A Theoretical Guiding Principles for High Program/Erase Endurance-2009
- Author(s)
  K. Shiraishi, K. Yamaguchi, A. Otake, K. Kobayashi
- Organizer
  The 15th International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  New Delhi, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] First principles studies on the proton transfer mechanism in cytochrome c oxidase2009
- Author(s)
  白石賢二
- Organizer
  第47回日本生物物理学会年会シンポジウム"Structural chemical studies on physiological functions of proteins"
- Place of Presentation
  徳島市
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 蛋白質の立体構造・電子状態・生物機能の間の相関関係の研究2009
- Author(s)
  神谷克政、重田育照、マウロボエロ、白石賢二、押山淳
- Organizer
  第64回日本物理学会年次大会
- Place of Presentation
  立教大学
- Year and Date
  2009-03-28
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  K. Shiraishi
- Organizer
  216th Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts2009
- Author(s)
  K. Shiraishi
- Organizer
  2009 Symposium on VLSI Technologies
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics for Si nanowire FET and its fabrication2009
- Author(s)
  K. Shiraishi
- Organizer
  PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
- Place of Presentation
  Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical models for work function control2009
- Author(s)
  K. Shiraishi
- Organizer
  16th biannual conference of Insulating Films on Semiconductors
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics for Si nanowire FET and its fabrication2009
- Author(s)
  白石賢二
- Organizer
  PICE International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] イオン性と共有結合性が織りなす新しい材料科学の世界-High-kゲートスタックを振り返って2009
- Author(s)
  白石賢二
- Organizer
  2009年秋季第70回応用物理学会学術講演会シンポジウム、「High-kゲートスタック研究を振り返り、次のステップヘ」
- Place of Presentation
  富山市
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  K. Shiraishi
- Organizer
  10th I10th International Conference on Atomically Cotrolled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Granada, Spain
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Nano-Interfaces and Nano-Structures for Future Si Nano-Devices2009
- Author(s)
  白石賢二
- Organizer
  216^<th> Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Characteristic Nature of High-K Dielectric Interfaces2008
- Author(s)
  K. Shiraishi
- Organizer
  IEEE EDS WIMNACT 2008 on NANOELECRONICS
- Place of Presentation
  Sikkim, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Characteristic Nature of High-k Dielectric Interfaces2008
- Author(s)
  K. Shiraishi
- Organizer
  IEEE EDS WIMNACT 2008 on NANOELECRONICS
- Place of Presentation
  Sikkim, India
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical investigations on metal/high-k interfaces2008
- Author(s)
  白石賢二
- Organizer
  2008 Intemational Conferonce on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  北京
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] タンパク質内環境下における新しいpKaの第一原理計算による提案2008
- Author(s)
  田中朝紀、神谷克政、重田育照、白石賢二
- Organizer
  第46回日本生物物理学会
- Place of Presentation
  福岡
- Year and Date
  2008-12-04
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] MONOS型メモリの電荷蓄積機構の理論的研究2008
- Author(s)
  白石賢二
- Organizer
  応用物理学会シリコンテクノロジー分科会. 表面・界面・シリコン材料研究委員会
- Place of Presentation
  東京大学
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] 数nmサイズSi量子ドットの大規模第一原理計算2008
- Author(s)
  岩田潤一、白石賢二、押山淳
- Organizer
  日本物理学会
- Place of Presentation
  岩手大学
- Year and Date
  2008-09-21
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] MONOS型メモリの電荷蓄積機構の理論的研究2008
- Author(s)
  白石賢二
- Organizer
  応用物理学会シリコンテクノロジー分科会
- Place of Presentation
  東京大学
- Year and Date
  2008-06-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Characteristic Nature of High-k Dielectric Interfaces2008
- Author(s)
  K. Shiraishi
- Organizer
  IEEE EDS WIMNACT 2008 on NANOELECRONICS
- Place of Presentation
  Sikkim, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Schottky barrier at Metal/high-k Interfaces2008
- Author(s)
  T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
- Organizer
  2008 MRS Spring Meeting
- Place of Presentation
  San Francisco, USA(invited)
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Schottky barrier at Metal/high-k Interface2008
- Author(s)
  T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
- Organizer
  2008 MRS Spring Meeting, H5.5
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-2008
- Author(s)
  K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki
- Organizer
  214th Meeting of Electrochemical Society
- Place of Presentation
  Pheonix, AZ., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical investigations on metal/high-k interfaces2008
- Author(s)
  K. Shiraishi. T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada
- Organizer
  2008 International Conference on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Recent Progress in Understanding the Mechanism of Shottoky Barrier Height Formation at Various Interfaces2007
- Author(s)
  K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada
- Organizer
  International Symposium on Theories of Organic-Metal Interfaces 2007
- Place of Presentation
  Suita, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K., Shiraishi
- Organizer
  ISSP International Workshiop/Symposium on Foundation and Application of Density Functional Theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] シトクロ-ム酸化酸素の発現機構の理論的解析2007
- Author(s)
  舘野賢・神谷克也・白石賢二・押山淳・ボエロマウロ
- Organizer
  科学研究費補助金特定領域研究「生体超分子構造」公開シンポジウム
- Place of Presentation
  千里ライフサイエンスセンタ,大阪
- Year and Date
  2007-12-18
- Data Source
  KAKENHI-PROJECT-18054004
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-K Gate Stacks Based on Thermodynamics2007
- Author(s)
  K., Shiraishi・Y., Akasaka・G., Nakamura・T., Nakayama・S., Miyazaki・H., Watanabe・A., Ohta・K., Ohmori・T., Chikyow・Y., Nara・K., Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D. C., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada(Invited)
- Organizer
  211th Meeting of Electrochemical Society, Chicago
- Place of Presentation
  USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji, K. Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, M. Kadoshima, H. Watanabe, K. Ohmori, T. Chikyow, K. Yamabe, Y. Nara, Y. Ohji and K. Yamada
- Organizer
  212th Meeting of Electrochemical Society
- Place of Presentation
  Washington D. C., USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] 超分子における機能制御機構の量子構造生物学2007
- Author(s)
  舘野賢・神谷克也・白石賢二・押山淳・ボエロマウロ
- Organizer
  科学研究費補助金特定領域研究「生体超分子構造」第三回ワ-クショップ
- Place of Presentation
  ホテルニュ-アカオ,熱海
- Year and Date
  2007-07-11
- Data Source
  KAKENHI-PROJECT-18054004
[Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K. Shiraishi
- Organizer
  ISSP International Workshop/Symposium on Foundation and Application of Density Functional Theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics-O Vacancies and Interface Reaction2007
- Author(s)
  K. Shiraishi
- Organizer
  14th International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  Mumbai, India
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K. Shiraishi
- Organizer
  ISSP Int. Sympo. on Foundation and Application of density functional theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007
- Author(s)
  K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, and K. Yamada
- Organizer
  211th Meeting of Electrochemical Society
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18360017
[Presentation] Interface Properties of Hf-Based High-k Gate Dielectrics -O Vacancies and Interface Reaction-2007
- Author(s)
  K. Shiraishi
- Organizer
  14th International Workshop on the Physics of Semiconductor Devices
- Place of Presentation
  Mumbai, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] How can first principles calculations give large contributions to industries?2007
- Author(s)
  K. Shiraishi
- Organizer
  ISSP International Workshop/ Symposium on Foundation and Application of Density Functional Theory
- Place of Presentation
  Kashiwa, Japan
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Interface Properties of Hf-Based High-K Gate Dielectrics -O Vacancies and Interface Reaction2007
- Author(s)
  K. Shiraishi
- Organizer
  14th International Workshop on the Physics of Semicon ductor Devices
- Place of Presentation
  Mumbai, India
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] What Happen at High-k Dielectric Interfaces?2006
- Author(s)
  K. Shiraishi, T. Nakayama, Y. Akasaka, H. Takeuchi, S. Miyazaki, N. Umezawa, G. Nakamura, A. Ohta, T. Nakaoka, H. Watanabe, K. Yamabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  San Diego, CA, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physics of Metal/High-k Interfaces2006
- Author(s)
  T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
- Organizer
  Fourth International Symposium on High Dielectric Constant Gate Stacks at the 210th Meeting of Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Theoretical approaches towards elucidation of the cytochrome c oxidase reaction mechanism2006
- Author(s)
  K. Shiraishi
- Organizer
  Int. Workshop on Reaction Mechanisms of Energy Transducing Metalloenzymes
- Place of Presentation
  Hyogo
- Year and Date
  2006-06-17
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006
- Author(s)
  K. Shiraishi
- Organizer
  8th Int. Conf. on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] What happen at high-k dielectric interfaces?2006
- Author(s)
  K. Shiraishi
- Organizer
  37^<th> IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  San Diego, CA, USA
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Theory of Fermi Level Pinning of High-k Dielectrics2006
- Author(s)
  K. Shiraishi, H. Takeuchi, Y. Akasaka, H. Watanabe, N. Umezawa, T. Chikyow, Y. Nara, T. -J. King Liu, K. Yamada
- Organizer
  2006 International Conference on Simulation of Semiconductor Process and Devices
- Place of Presentation
  Monterey, CA, USA
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Physical Model of Electron and Hole Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) for Embedded Flash Memories2006
- Author(s)
  K. Shiraishi
- Organizer
  2006 International Work-shop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  川崎
- Year and Date
  2006-11-10
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Theoretical approaches for protein function2006
- Author(s)
  K. Shiraishi
- Organizer
  5th East Asian Biophysics Symposium
- Place of Presentation
  Okinawa, Japan
- Data Source
  KAKENHI-PROJECT-17064002
[Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006
- Author(s)
  K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T-J. King Liu, H. Iwai, K. Yamada
- Organizer
  8th International Conference on Solid-State and Integrated-Circuit Technology
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Diamond MOS Interface Properties Studied by XPS/UPS/XANES and C-V Measurements
- Author(s)
  M. Kasu, K. Hirama, K. Harada, M. Imamura, K. Takahashi, K. Shiraishi
- Organizer
  The 7th International Symposium on Surface Science
- Place of Presentation
  松江
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24360124

1. BOERO Mauro (40361315)

# of Collaborated Projects: 7 results

# of Collaborated Products: 25 results
2. OSHIYAMA Atsushi (80143361)

# of Collaborated Projects: 6 results

# of Collaborated Products: 60 results
3. OKADA Susumu (70302388)

# of Collaborated Projects: 6 results

# of Collaborated Products: 17 results
4. BERBER Savas (90375402)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. NAKAYAMA Takashi (70189075)

# of Collaborated Projects: 3 results

# of Collaborated Products: 20 results
6. YAMAUCHI Jun (90383984)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. UCHIDA Kazuyuki (10393810)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
8. IWATA Junichi (70400695)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
9. MASARU Tateno (40291926)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
10. UEMATSU Masashi (60393758)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. AKIYAMA Toru (40362363)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
12. MURAGUCHI Masakazu (90386623)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
13. NOMURA Shintaro (90271527)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
14. ENDOH Tetsuo (00271990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
15. UEDONO Akira (20213374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. CHICHIBU Shigefusa (80266907)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. KAGESHIMA Hiroyuki (70374072)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. WATANABE Takanobu (00367153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. ITO Kohei (30276414)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. KASU Makoto (50393731)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
21. NIWA Masaaki (90608936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. SATO Soshi (80649749)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. YAMABE Kikuo (10272171)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. TAKEDA Kyozaburo (40277851)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. MIHARA Hisakazu (30183966)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 重田育照 (80376483)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. 財満鎭明 (70158947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 宮崎誠一 (70190759)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 牧原克則 (90553561)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. 初貝安弘 (80218495)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
32. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
33. 中塚理 (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. 田仲由喜夫

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
35. 佐藤宇史

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

SHIRAISHI Kenji 白石 賢二

Research Projects

Research Products

Co-Researchers

Synthesis of New Group IV Two Dimensional MaterialsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Theoretical Design of Nano-Device and Nano-Interface by First Principles ApproachPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

New development of the theories of nano-interfaces and their application to nano-devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Theoretical studies on the behaviors of impurities in high-k gate dielectrics.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Theoretical studies on the basic processes of Si thermal oxidation.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model2018

SHIRAISHI Kenji 白石賢二