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Japanese Journal of Applied Physics
Volume: 57
210000148861
210000148905
Applied Physics Express
Volume: 11 Pages: 031002-031002
210000136116
IEICE Transaction on Electronics
Volume: E100 Pages: 928-933
Jpn. J. Appl. Phys.
Volume: 56 Issue: 9 Pages: 095701-095701
10.7567/jjap.56.095701
210000148278
J. Phys.: Condens. Matter
Volume: 29 Pages: 115302-111
10.1088/1361-648x/aa57e0
Surface Science
Volume: 609 Pages: 203-206
10.1016/j.susc.2012.12.015
Jpn. J. Appl. Phys. 45
Pages: 14001-14001
J. Comp. Phys. 229
Pages: 2339-2363
J. Cryst. Growth (印刷中)(掲載確定)
J. Phys. Chem. B 113
Pages: 6866-6872
Microelectronic. Eng. 86
Pages: 1849-1851
Journal of Physical Chemistry B (印刷中)(掲載確定)
Pages: 6886-6886
Physics Beview B77
Pages: 115280-115280
Phys. Rev. B77
Pages: 165130-165130
Pages: 115208-115208
Physical Review B 77
PHYSICAL REVIEW B 77
Biochimica et Biophysica Acta-Bioenergetics 1777
ECS Trans 16
Pages: 261-266
Jpn. J. Appl. Phys. 47
Pages: 7807-7811
120001870459
Appl. Surf. Sci. 254
Pages: 6199-6202
Pages: 45308-45308
表面科学 29
Pages: 92-98
10021165483
Journal of Physics 19
Pages: 365220-365220
Physics Beview B76
Pages: 155436-155436
120000835204
Phys. Rev. B76
PHYSICAL REVIEW B 76(15)
IEEE ELECTRON DEVICE LETTERS 28
Pages: 363-365
APPLIED PHYSICS LETTERS 91
JOURNAL OF APPLIED PHYSICS 101
Journal of the American Chemical Society 129
Pages: 9663-9673
PHYSICAL REVIEW B 76(15) : Art. No. 155436 OCT
JAPANEST JOURNAL OF APPLIED PHYSICS PART 1 46
Pages: 1891-1894
PHYSICAL REVIEW B 76 (15) : Art. No. 155436
J. Ame. Chem. Soc. 129
Pages: 9663-9663
APPLIED PHYSICS LETTERS 91 (13) : Art. No. 132904
Technical Digest of 2007 Symposium on VLSI Technology
Pages: 66-67
IEEE Electron Device Letters 28
IEEE Electron Dev. Lett. 28
Pages: 363-363
IEICE TRANSACTIONS ON ELECTRONICS E90C
Pages: 955-961
10018216417
OURNAL OF PHYSICS-CONDENSED MATTER 19 (36) : Art. No. 365218
Journal of Physics: Condensed Matter 19
Pages: 365218-365218
Pages: 3507-3509
40015421738
表面科学 28
Pages: 28-33
PHYSICAL REVIEW B 76
APPLIED PHYSICS LETTERS 91(13) : Art. No. 132904 SEP
JOURNAL OF CRYSTAL GROWTH 301
Pages: 75-78
JOURNAL OF PHYSICS-CONDENSED MATTER 19
110007519658
ECS Transactions 1(5)
Pages: 479-479
10018461127
J.Phys.Chem B 110
Pages: 4443-4450
J. Phys. Chem. B 110
Pages: 4443-4443
Jpn. J. Appl. Phys Part 2, 45
J. Phys. Chem B 110
J.Phys.Chem.B 110
Physica B 376-377
Pages: 392-392
Thin Solid Films 508
Pages: 305-305
Pages: 270-270
Jpn. J. Appl. Phys. Part 2 45
Pages: 392-394
J.Appl.Phys. 100
Pages: 305-310
Physica B (In press)
Journal of Physical Chemistry B 110
ECS Transactions 2(1)
Pages: 25-25
ECS Transactions 3(3)
Pages: 351-351
Pages: 196-196
Physica B
Pages: 270-275
Technical Digest of 2006 Symposium on VLS1 Tech., Honolulu, USA
Pages: 206-206
J. Appl. Phys. 100
ECS Transactions 1
Jpn.J.Appl.Phys. Part 2, 45
Technical Digest of 2006 Symposium on VLSI Tech.(Honolulu, USA)
Japanese Journal of Applied Physics Part 1 45
Pages: 694-694
40007140212
ECS Transactions 2
Pages: 196-199
Pages: 129-129
Appl.Phys.Lett. 88
Pages: 112903-112903
Jpn.J.Appl.Phys.Part 2 45
Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
Pages: 135-136
Jpn. J. Appl. Phys. Part2 45
Pages: 407-410
Jap.J.of Appl.Phys. 45
Pages: 694-699
Pages: 392-395
J.Appl.Phys. 99
Pages: 54507-54507
Pages: 4433-4433
J. Phys. Chem. B110
Pages: 63-63
Appl.Surf.Sci. 244
Pages: 178-178
Jap.J.Appl.Phys.PART 2 44
10016856711
Technical Digest of IEEE International Electron Devices Meeting
Applied.Surface.Science 244
Journal of Chemical Physics 122
Pages: 224101-224101
Applied Physics Letters 86
Pages: 143507-143507
Jap.J.Appl.Phys.PART 1 44
Pages: 7756-7756
10016870318
IEEE Electron Device Letters 26
Pages: 722-722
Jap. J. Appl. Phys. PART 2 44
Pages: 186-186
Extended Abstracts of the 2004 Conference on Solid State Device and Materials, Kobe, Japan
Pages: 488-489
10022542324
J. Chem. Phys 122
Technical Digest of IEEE International Electron Devices Meeting, Washington D.C., USA
Pages: 43-46
110004382125
Japanease Journal of Applied Physics PART 2 44
Surface Science 585
Jpn. J. Appl. Phys. PART 1 44
Proceedings of the 27th International Conference on the Physics of Semiconductors
Pages: 427-430
J.Chem.Phys 122
Appl.Phys.Lett. 86
Japanease Journal of Applied Physics PART 1 44
Surf. Sci. 585
IEEE Electron Device Lett. 26
Pages: 722-724
Appl. Surf. Sci 244
Technical Digest of IEEE International Electron Devices Meeting, Washington D.C.
Japanese Journal of Applied Physics, PART 2 44
Pages: 389-390
Technical Digest of 2005 Symposium on VLSI Technology, Kyoto, Japan
Pages: 228-229
Pages: 228-228
Applied Surface Science 244
Applied Physics Letters (in press)
Pages: 860-861
Surf.Sci. 585
Japanese Journal of Applied Physics, PART 1 44
Appl. Phys. Lett 86
Jpn.J.Appl.Phys.PART 1 44
J.Chem.Phys. 122
Pages: 7756-7759
Ouyobutsuri 74
Pages: 1211-1216
Pages: 43-43
e-Journal of Surface Science and Nanotechnology 3
Pages: 488-488
130004438978
J.Phys.Soc.Jpn 73
Pages: 3198-3208
110001979277
Nikkei Micro Device Vol.10
Pages: 55-58
Technical Digest of 2004 Symposium on VLST Technology, Honolulu, USA
Pages: 108-109
Japanese Journal of Applied Physics 43
10013787295
J.Appl.Phys. 96
Pages: 5513-5519
Jap.J.Appl.Phys.Part 1 43
Pages: 8223-8226
10014216586
日経マイクロデバイス 10月号
Tech. Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
Jpn.J.Appl.Phys. 43
210000057192
J. Phys. Soc. Jpn 73
Phys.Rev.B 69
Pages: 45401-45401
Jpn.J.Appl.Phys.Part 2, Express Letter 43
Tech.Digest of 2004 IEEE International Electron Device Meeting (San Francisco, USA, December 13-15, 2004)
Pages: 129-132
Phys. Rev. B 69
Jpn.J.Appl.Phys.Part 1 43
Pages: 7847-7852
10014215085
Appl.Phys.Lett. 85
Pages: 221-223
Technical Digest of 2004 IEEE International Electron Device Meeting, San Francisco, USA
110003311212
Jap.J.Appl.Phys. 43
Pages: 7837-7842
10014215041
Jpn. J. Appl. Phys. 43
Tech.Digest of 2004 Symposium on VLSI Technology, (Honolulu, USA, June 15-17, 2004)
Phys.Rev. B, 69
Jpn. J. Appl. Phys. Part 2, Express Letter 43
Trans.Material Res.Soc.Jpn. 31
Proceedings of 35^<th> European Solid-State Device Research Conference (ESSDERC 2005)(12-16 September 2005, Grenoble, France.)
Pages: 201-204