Muraguchi Masakazu 村口正和

… Alternative Names

Researcher Number	90386623
Other IDs
Affiliation (Current)	2020: 北海道科学大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2017: 北海道科学大学, 工学部, 准教授 2016: 東北大学, 工学研究科, 准教授 2008 – 2010: Tohoku University, 学際科学国際高等研究センター, 教育研究支援者 2009: 東北大学, 学際科学国際高等研究センター, 教育研究補助者
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties Except Principal Investigator Science and Engineering / Computer system
Keywords	Principal Investigator トンネル現象 / ナノドット・ナノ構造 / 量子ダイナミクス / 二次元電子ガス / 2次元電子ガス / ナノ構造 / ナノドット / 動的相関 / 非平衡状態 / ナノドットメモリー / 電子ガス … More Except Principal Investigator … More

脳型コンピューティング向けダーク・シリコンロジックLSIの基盤技術開発Ongoing
- Principal Investigator
  
  羽生貴弘
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Computer system
- Research Institution
  Tohoku University
Theoretical Study on Tunneling Phenomena in Interface of Semiconductor Devices based on Quantum DynamicsPrincipal Investigator
- Principal Investigator
  
  MURAGUCHI Masakazu
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba

All 2011 2010 2009 2008

All Journal Article Presentation

[Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Key Engineering Materials vol.470
  
  Pages: 48-53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Key Engineering Materials
  
  Volume: 470 Pages: 48-53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
- Journal Title
  
  AIP Conference Series
  
  Volume: (未定印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Japanese Journal of Applied Physics 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
- Journal Title
  
  AIP Conference Series 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E94-C(印刷中)
- NAID
  10029505917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: (未定印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
- Journal Title
  
  IEICE Transactions on Electronics E94-C
  
  Pages: 730-736
- NAID
  10029505917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, T.Endoh, K.Shiraishi
- Journal Title
  
  IEICE Transacions on Electronics E93-C
- NAID
  10026825422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, T.Endoh, Kenji Shiraishi
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E93-C Pages: 563-568
- NAID
  10026825422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010
- Author(s)
  Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi
- Journal Title
  
  IEICE Transacions on Electronics No.5(to be published)
- NAID
  10026825422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010
- Author(s)
  M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
- Journal Title
  
  Physica E
  
  Pages: 2602-2605
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article]2010
- Author(s)
  Y. Sakurai, J-I Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys. 45
  
  Pages: 14001-14001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010
- Author(s)
  M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
- Journal Title
  
  Physica E (未定, In Press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots2009
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, K.Shiraishi
- Journal Title
  
  Journal of Physics : Conference Series 150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical Study on Time Dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot2009
- Author(s)
  村口正和
- Journal Title
  
  Journal of Physics C (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots2009
- Author(s)
  M. Muraguchi
- Journal Title
  
  Journal of Physics : Conference Series 150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical study of the time-dependent phenomenon of photon assisted tunneling through a charged quantum dot2009
- Author(s)
  M. Muraguchi
- Journal Title
  
  Journal of Physics : Condensed Matter 21
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical study of the time-dependent phenomenon of photon-assisted tunneling through a charged quantum dot2009
- Author(s)
  M.Muraguchi
- Journal Title
  
  JOURNAL OF PHYSICS-CONDENSED MATTER 21
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Theoretical study of the time-dependent phenomenon of photon assisted tunneling through a charged quantum dot2009
- Author(s)
  M.Muraguchi, K.Shiraishi, K.Takeda
- Journal Title
  
  Journal of Physics : Condensed Matter 21
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron zas weakly counled with a discrete level2008
- Author(s)
  村口正和
- Journal Title
  
  Japanese Jourfial of Applied Physics 47
  
  Pages: 7807-7811
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices2008
- Author(s)
  Y. Takada, M. Muraguchi, K. Shiraishi
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6199-6202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas wealdy coupled with a discrete level2008
- Author(s)
  M. Muraguchi
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 7807-7811
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas wealdy coupled with a discrete level2008
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, K.Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 7807-7811
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760019
[Journal Article] Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level2008
- Author(s)
  M. Muraguchi, Y. Takada, S. Nomura, K. Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7807-7811
- NAID
  120001870459
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  IMFEDK2010, B-2
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Collective Tunneling Model in Charge Trap Type NVM Cell2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 2次元電子ガス-量子ドット界面における電子トンネル過程に対する微視的考察2010
- Author(s)
  村口正和, 高田幸宏, 櫻井蓉子, 野村晋太郎, 白石賢二, 牧原克典, 池田弥央, 宮崎誠一, 重田育照, 遠藤哲郎
- Organizer
  日本物理学会2010年春季大会
- Place of Presentation
  岡山大学(岡山県)
- Year and Date
  2010-03-21
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 8A-4
- Place of Presentation
  Tokyo, Japan, June
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta, T.Endoh
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
- Organizer
  International Conference on the Physics of Semiconductors, Th-P2-105.
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  ISTESNE 2010, ISTESNE 2010
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigeta, T.Endoh
- Organizer
  International Conference on the Physics of Semiconductors
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Collective Tunneling Model in Charge Trap Type NVM Cell2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  International Conference on. Solid State Devices and Materials (SSDM2010), E-3-2
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor2010
- Author(s)
  M.Muraguchi, Y, Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta, T.Endoh
- Organizer
  International Meeting for Future of Electron Devices, Kansai 2010
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2009
- Author(s)
  村口正和
- Organizer
  The 14th International Conference on Modulated Semiconductor structures(MSS-14)
- Place of Presentation
  Kobe, Japan
- Year and Date
  2009-07-20
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor2009
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  International Conference on.Solid State Devices and Materials (SSDM2009)
- Place of Presentation
  Sendai, Japan.
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] New insight into Tunneling Process between Quantum Dot and Electron Gas2009
- Author(s)
  Masakazu Muraguchi
- Organizer
  America Physical Society 2009 March Meeting
- Place of Presentation
  Pittsburg, USA
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 1, Importance of the Electronic State on the Electrode in Electron, Tunneling Processes between the Electrode and the Quantum Dot2009
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  The 14th International Conference on Modulated Semiconductor structures (MSS-14)
- Place of Presentation
  Kobe, Japan
- Year and Date
  2009-07-20
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 電子ガス-量子ドット結合系における電子ダイナミクスII2009
- Author(s)
  村口正和, 遠藤哲郎, 櫻井蓉子, 野村晋太郎, 高田幸宏, 白石賢二, 池田弥央,牧原克典, 宮崎誠一, 斉藤慎一
- Organizer
  日本物理学会春季大会
- Place of Presentation
  立教大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Study of Electronic State in Electrode for Nano-Electronic Devices2009
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  The 2009 International Meeting for Future of Electron Devices,Kansai
- Place of Presentation
  Osaka, Japan
- Year and Date
  2009-05-14
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] New insight into Tunneling Process between Quantum Dot and Electron Gas2009
- Author(s)
  M.Muraguchi, T.Endoh, Y.Sakurai, S.Nomura, Y.Takada, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
- Organizer
  America Physical Society 2009 March Meeting.
- Place of Presentation
  Pittsburg, USA.
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer2009
- Author(s)
  S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  216th Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor2009
- Author(s)
  村口正和
- Organizer
  International Conference on.Solid State Devices and Materials(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2009
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2009
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 電子ガス-量子ドット結合系における電子ダイナミクスII2009
- Author(s)
  村口正和
- Organizer
  日本物理学会第64回年次大会
- Place of Presentation
  立教大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] 少数個の電子で動く未来デバイスの姿2009
- Author(s)
  村口正和、遠藤哲郎、白石賢二、野村晋太郎、櫻井蓉子、高田幸宏、宮崎誠一、牧原克典、池田弥央
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Study of Electronic State in Electrode for Nano-Electronic Devices2009
- Author(s)
  村口正和
- Organizer
  The 2009 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Year and Date
  2009-05-14
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 円-リング複合型量子ドットのFloquet状態2009
- Author(s)
  村口正和, 遠藤哲郎, 杉山功太, 多川知希, 奧西拓馬, 武田京三郎
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本大学(熊本県)
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 円―リング複合型量子ドットの Floquet 状態2009
- Author(s)
  村口正和
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本大学(熊本県)
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical Study on Electron Dynamics for a Two-dimensional Electron Gas Coupled with a Quantum Dot2008
- Author(s)
  M.Muraguchi
- Organizer
  International Conference on the Physics of Semiconductors.
- Place of Presentation
  Rio de Janeiro,Brazil.
- Year and Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system2008
- Author(s)
  M.Muraguchi, Y.Takada, Y.Sakurai, T.Endoh, S.Nomura
- Organizer
  13^<th> Advanced Heterostructures and Nanostructures Workshop.
- Place of Presentation
  Hawaii, USA.
- Year and Date
  2008-12-10
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots2008
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, K.Shiraishi
- Organizer
  International conference on Low Temperature Physics.
- Place of Presentation
  Amsterdam, Holland.
- Year and Date
  2008-08-06
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 信頼性を支配するトンネル現象に対する新しい理解2008
- Author(s)
  村口正和, 白石賢二
- Organizer
  第55回応用物理学関係連合講演会(シンポジウム講演)
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical Study on Time-dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot2008
- Author(s)
  M.Muraguchi, T.Okunishi, K.Shiraishi, K.Takeda
- Organizer
  International Conference on Quantum Simulators and Design 2008.
- Place of Presentation
  東京都江東区,Japan
- Year and Date
  2008-06-02
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical Study on Time-dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot2008
- Author(s)
  M. Muraguchi
- Organizer
  International Conference on Quantum Simulators and Design 2008
- Place of Presentation
  東京都江東区, Japan
- Year and Date
  2008-06-02
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 信頼性を支配するトンネル現象に対する新しい理解(シンポジウム講演)2008
- Author(s)
  村口正和
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system2008
- Author(s)
  Masakazu Muraguchi
- Organizer
  13^<th> Advanced Heterostructures and Nanostructures Workshop
- Place of Presentation
  Hawaii, USA
- Year and Date
  2008-12-10
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical Study on Electron Dynamics for a Two-dimensional Electron Gas Coupled with a Quantum Dot2008
- Author(s)
  M. Muraguchi
- Organizer
  International Conference on the Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] 電子ガスー量子ドット結合系における電子ダイナミクス2008
- Author(s)
  村口正和, 高田幸宏, 櫻井蓉子, 野村晋太郎, 斎藤慎一, 白石賢二
- Organizer
  日本物理学会秋季大会
- Place of Presentation
  岩手大学
- Year and Date
  2008-09-21
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots2008
- Author(s)
  M. Muraguchi
- Organizer
  International conference on Low Temperature Physics
- Place of Presentation
  Amsterdam, Holland
- Year and Date
  2008-08-06
- Data Source
  KAKENHI-PROJECT-20760019
[Presentation] Theoretical investigation of quantum dot coupled to a two-dimensional electron system2008
- Author(s)
  村口正和
- Organizer
  13th Advanced Heterostructures and Nanostructures Workshop
- Place of Presentation
  ハワイ(アメリカ)
- Year and Date
  2008-12-09
- Data Source
  KAKENHI-PROJECT-18063003

1. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
2. OSHIYAMA Atsushi (80143361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. OKADA Susumu (70302388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. YAMAUCHI Jun (90383984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NAKAYAMA Takashi (70189075)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. BOERO Mauro (40361315)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. NOMURA Shintaro (90271527)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
8. ENDOH Tetsuo (00271990)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. BERBER Savas (90375402)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 羽生貴弘 (40192702)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 夏井雅典 (10402661)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 米田友洋 (30182851)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 今井雅 (70323665)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 池田正二 (90281865)

# of Collaborated Projects: 1 results

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15. 鬼沢直哉 (90551557)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Muraguchi Masakazu 村口 正和

村口 正和 ムラグチ マサカズ

MURAGUCHI Masakazu 村口 正和

Research Projects

Research Products

Co-Researchers

脳型コンピューティング向けダーク・シリコンロジックLSIの基盤技術開発Ongoing

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Theoretical Study on Tunneling Phenomena in Interface of Semiconductor Devices based on Quantum DynamicsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

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Research Institution

Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach

Principal Investigator

Project Period (FY)

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Research Institution

[Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2011

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[Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2011

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[Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2011

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[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011

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[Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2011

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[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2011

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NAID

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[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011

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[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2011

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NAID

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[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010

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NAID

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[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010

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NAID

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[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010

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NAID

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[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010

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[Journal Article]2010

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Muraguchi Masakazu 村口正和

村口正和ムラグチマサカズ

MURAGUCHI Masakazu 村口正和