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KUWANO Hiroshi  桑野 博

ORCIDConnect your ORCID iD *help
Researcher Number 10051525
Other IDs
Affiliation (based on the past Project Information) *help 1995 – 2003: KEIO UNIVERSITY,FACULTY OF SCIENCE AND TECHNOLOGY,PROFESSOR, 理工学部, 教授
1994: 慶應義塾大学, 理工学部・電気工学科, 教授
Review Section/Research Field
Principal Investigator
電子デバイス・機器工学
Except Principal Investigator
電子デバイス・機器工学
Keywords
Principal Investigator
elemental boron source / rapid thermal diffusion / modeling of dopant profiles / ultra-shallow junctions / silicon / diffusion of boron / プロセスモデリング / ド-ピング / 元素ボロン拡散源 / 急速熱拡散 … More / ドーパント分布のモデリング / 極浅接合 / シリコン / ボロン拡散 … More
Except Principal Investigator
シリコン / silicon / 空格子点 / 点欠陥 / Si_3N_4 / quantum dynamics / atomic layer doping / nuclear magnetic resonance / ^<31>P nuclear spin / isotope control / spin-free silicon / quntum computating / 量子ダイナミックス / 単原子層ドーピング / 核磁気共鳴 / ^<31>P核スピン / 同位体組成制御 / スピンフリーシリコン / 量子コンピューティング / process modeling / Fermi level effect / self-interstitial / vacancy / point defect / enriched isotope / self-diffusion / 格子間原子 / プロセスモデリング / フェルミ準位効果 / 自己格子間原子 / 高純度同位元素 / 自己拡散 / interstitialcy component / excess vacancy generation / compressive strain in Si / Si_3N_4 film stress / Si structure / enhanced diffusion of Sb / retarded diffusion of B and P / dopant (B,P,Sb) diffusion in Si / 窒化膜応力 / 圧縮応力 / 空格子点拡散係数 / 不純物拡散 / 格子間原子拡散機構成分 / 過剰空格子点の発生 / Si中の圧縮歪 / Si_3N_4膜応力 / Si構造 / Sbの増速拡散 / BとPの減速拡散 / Si中のドーパント(B,P,Sb)拡散 Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (5 People)
  •  Basic Research on Silicon Quantum Computation Based on Isotope Control and Neutron Irradiation

    • Principal Investigator
      MATSUMOTO Satoru
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Keio University
  •  Silicon Self-Diffusion Using Isotopically Enriched ^<28>Si Epitaxial Layers

    • Principal Investigator
      MATSUMOTO Satoru
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (A).
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Keio University
  •  Control of Point Defects in Si and its Application to Process Simulation

    • Principal Investigator
      MATSUMOTO Satoru
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Keio University
  •  FORMATION OF ULTRA-SHALLOW PN-JUNCTIONS AND MODELING OF DOPANT PROFILESPrincipal Investigator

    • Principal Investigator
      KUWANO Hiroshi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      KEIO UNIVERSITY
  • 1.  MATSUMOTO Satoru (00101999)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  YOSHIDA Masayuki (80038984)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  ITOH Kohei (30276414)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  ETO Mikio (00221812)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  KURODA Tadahiro (50327681)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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