KAWASAKI Koji 川崎宏治

Researcher Number	10234056
Affiliation (based on the past Project Information) *help	2007: Tokyo Institute of Technology, 大学院・総合理工学研究科, 助教 2005 – 2006: 東京工業大学, 大学院総合理工学研究科, 助手 2004: 東京工業大学, 助手 1993 – 2003: 東京工業大学, 大学院・総合理工学研究科, 助手 2001: Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Researoh associate, 理学部, 助手 … More 2000: 東京工業大学, 大学院・総合理工学, 助手 2000: 東京工業大学, 大学院・総合理工学研究科・(文部科学教官)助手 1999: 東京工業大学, 大学院・総合理工学研究所, 助手 1994: 東京工業大学, 大学院総合理工学研究科, 助手 1993: 東京工業大学, 大学院・総合理工学研究所, 助手 1992: 東京工業大学, 総合理工学研究科, 助手 1992: 東京工業大学, 総理工, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / 表面界面物性 / Applied physics, general / Science and Engineering Except Principal Investigator Applied materials science/Crystal engineering / 電子デバイス・機器工学 / Science and Engineering / 表面界面物性 / 電子材料工学
Keywords	Principal Investigator MBE / GaN / 量子ドット / 選択成長法 / 単一電子トランジスタ / 窒化物 / AlGaN / 自然形成 / Ga液滴 / CaF_2 … More / その場観察 / 表面改質 / 電子ビーム / CARBONNANOTUBE / NITRIDE SEMICONDUCTOR / INFRARED CONTROL / SPIN / SINGLE-ELECTRON / QUANTUM DOTS / AlN / 赤外光 / 電子スピン / クーロンブロッケード / 単一電子スピン / 半導体量子ドット / カーボンナノチューブ / 窒化物半導体 / 赤外制御 / スピン / 単一電子 / resonant tunneling / Coulomb diamond / single-electron transistor / vertical coupled quantum dots / selective area growth / quantum pillar / nitride / アンモニア / 負性微分抵抗 / 共鳴トンネルダイオード / ナノ構造 / 量子相関素子 / 結合量子ドット / 共鳴トンネル / クーロンダイヤモンド / AIGaN / 垂直型結合量子ドット / 選択成長 / 量子ピラー / 超格子 / 深紫外 / 縱型発光素子 / 位置制御 / 液滴エピタキシー / 分子線エピタキシー / 窒化ガリウム / 表面エネルギー / 量子サイズ効果 / フォトルミネセンス / 三次元量子ドット / 光デバイス / 自然形成法 / GaAs / P / F脱離 / 電子線照射 / 表面光吸収分光法 / 光の干渉効果 / その場制御 / 原子オーダー / 弗素原子 / 表面光吸収法 / 弗化物 … More Except Principal Investigator CaF_2 / 弗化物 / 電子ビーム / 自然形成 / 表面改質 / MOCVD / 位置制御 / 量子ドット / フッ化物 / ヘテロエピタキシー / p型 / AlGaN / ワイドバンドギャップ / CdF_2 / GaAs / ZnSe / 単電子 / ガリウム / 無機レジスト / シリコン / 双晶 / ローテーショナル・ツイン / temperature modulation technique / boron oxide material / flax crystal growth technique / anti-surfactant method / hetero nonlinear photonic crystal / vertical type Deep UV LED / two light beam in-situ monitoring system / deep UV LED / LED / ドーピング / Al N / ナノテクノロジー / 半導体発光デバイス / 深紫外 / 低転位化 / レーザーリフトオフ / 低転移化 / 縦型LED / 結晶成長 / 深紫外線 / Al GaN / p型ZnO / フラックス法 / 高効率深紫外波長変換 / 非線型フォトニック結晶 / 量子ドットAlInGaN / 表面核生成機構 / 良質AlGaN / 縦型深紫外LED / 温度変調結晶成長法 / ボロン酸化物 / フラックス結晶成長法 / アンチサーファクタント / ヘテロ非線形フォトニック結晶 / 縦型深紫外発光素子 / 2光束その場観測システム / 深紫外半導体発光素子 / Hall-effect measurement / Co-doping / Mg-doping / Alternating supply method / Wide bandgap / Deep UV-LED / パルス供給法 / ホール濃度 / サファイヤ / GaN / 不純物対 / 第一原理計算 / MBE / 窒化物半導体 / 高濃度P型 / 交互供給コドーピング / 紫外半導体レーザ / 紫外LED / III族窒化物半導体 / 有機金属気相成長法 / 交互供給成長法 / 貫通転位密度 / コドーピング / Mgドーピング / 交互供給法 / MOCVD法 / 深紫外LED / multiwall nanotube / Coulomb blockade / tunnelingphenomena / conduction / nanotuber / carbon / 化学修飾 / パルス光励起 / 吸収スペクトル / 金属電極 / スピン / カーボンナノチューブ / 多層ナノチューブ / クーロンブロッケイド / トンネル現象 / 電気伝導 / ナノチューブ / カーボン / integration / quantum devices / resonant tunneling / Fluoride / 超薄膜 / 集積化 / 量子効果デバイス / 共鳴トンネル / Micromanipulation Technogoly / Spatial Phase Control Regions / Spontaneous Emission Life Time / Spontaneous Emission Control / Photonic Crystals / 選択結晶成長 / リングレーザー / 無しきい値レーザー / マイクロマニピュレーション法 / マイクロマニピュレイション法 / 位相制御領域 / 自然放出寿命 / 自然放出光制御 / フォトニック結晶 / interface control / heteroepitaxy / ionicity / エピタキシャル成長 / 半導体 / ヘテロ界面 / SrF_2 / IV-V族化合物 / II-VI族化合物 / 分子線エピタキシ- / イオン性度制御層 / 界面制御 / ヘテロエピタキシ- / イオン性度 / トンネル接合 / 金属ドットアレイ / 多重トンネル接合 / クーロンブロッケード / 金属ドット / 微細加工 / 量子構造 / 自己組織的形成 / X線CTR法 / 二段階成長 / 界面 / 電子線 / ブル-スタ-角 / P偏光 / P(リン) / その場観察 / 表面光吸収法 Less

AlGaN系縦型高効率深紫外発光デバイスの研究Principal Investigator
- Principal Investigator
  
  川崎宏治
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Development of deep UV light emitting devices using nano-technology and the application
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  2003 – 2007
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Ritsumeikan University
  Tokyo Institute of Technology
INFRARED LIGHT CONTROL OF SINGLE-ELECTRON SPIN IN THE NITRIDE QUANTUM DOTS AND ITS APPLICATIONPrincipal Investigator
- Principal Investigator
  
  KAWASAKI KOJI, 青柳克信
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied physics, general
- Research Institution
  Tokyo Institute of Technology
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
- Principal Investigator
  
  HIRAYAMA Hideki, 青柳克信
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
  Tokyo Institute of Technology
Study on vertical coupled quantum dots fabrication using selective area growth of nitride nano-pillarsPrincipal Investigator
- Principal Investigator
  
  KAWASAKI Koji
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
Control of spin transport in carbon nanotubes
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
  The Institute of Physical and Chemical Research
表面エネルギー変調による高均一サイズ窒化ガリウム量子ドットの自然形成Principal Investigator
- Principal Investigator
  
  川崎宏治
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
電子線位置制御による高密度極微電極島の自然形成
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tokyo Institute of Technology
Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1998 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (B)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
  The Institute of Physical and Chemical Research
Integrated Gountum Devices using Fluoride Heterostructures
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
電子線位置制御による高密度極微電極島の自然形成
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
弗化物中の埋込ガリウムヒ素三次元量子ドット構造の物性と応用Principal Investigator
- Principal Investigator
  
  川崎宏治
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
エピタキシャル弗化物による超微細加工技術の研究
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
エピタキシャル弗化物による超微細加工技術の研究
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
エピタキシャル沸化物による超微細加工技術の研究
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
光の干渉効果を用いた表面光吸収分光法による表面改質エピタキシ-のその場観察Principal Investigator
- Principal Investigator
  
  川崎宏治
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
弗化物上InP電子ビーム表面改質エピタキシ-のその場制御Principal Investigator
- Principal Investigator
  
  川崎宏治
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
"Interface Controlled Heteroepitaxy of Ionic Crystals and Covalent Crystals Using Ionicity Control Layr"
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  1993 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
表面光吸収法を用いたその場観察による電子ビーム表面改質エピタキシーの機構解明
- Principal Investigator
  
  古川静二郎, TSUTSUI Kazuo
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo Institute of Technology
ヘテロ成長におけるローテーショナル・ツイン生成機構の解明とその制御
- Principal Investigator
  
  古川静二郎
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
ヘテロ成長におけるローテーショナル・ツイン生成機構の解明とその制御
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology

All 2007 2006 2005 2002

All Journal Article Patent

[Journal Article] Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD2007
- Author(s)
  M.Takeuchi, H.Shimizu, R.Kajitani, K.Kawasaki, Y.Kumagai, A.Koukits, Y.Aoyagi
- Journal Title
  
  J. Crystal Growth, 298
  
  Pages: 336-336
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Vertical AIGaN deep ultraviolet light emitting diode emitting 322nm fabricated by the laser lift-off technique2007
- Author(s)
  K. Kawasaki, Y. Aoyagi
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 261114-261116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032004
[Journal Article] Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique2006
- Author(s)
  K.Kawasaki, C.Koike, Y.Aoyagi, M.Takeuchi
- Journal Title
  
  Appl. Phys. Lett. 89・25
  
  Pages: 261114-261114
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Vertical AIGaN deep ultraviolet light a mitting diode emitting at 322 nmfabricated by the laser lift-off technique2006
- Author(s)
  K.Kawasaki
- Journal Title
  
  Appl.Phys.Lett. 89
  
  Pages: 261114-261116
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Vertical AlGaN deep ultraviolet light emitting diode emitting at 322nm fabricated by the laser lift-off technique2006
- Author(s)
  K. Kawasaki
- Journal Title
  
  Appl. Phys. Lett. 89
  
  Pages: 261114-261114
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] 深紫外窒化物系発光デバイス2006
- Author(s)
  川崎宏治
- Journal Title
  
  光学 35
  
  Pages: 264-253
- NAID
  10017484853
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy2002
- Author(s)
  Koji Kawasaki, Ikuo Nakamatsu, Hideki Hirayama, Kazuo Tsutsui, Yoshinobu Aoyagi
- Journal Title
  
  Journal of Crystal Growth 243
  
  Pages: 129-133
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205015
[Journal Article] Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy2002
- Author(s)
  Koji Kawasaki
- Journal Title
  
  Journal of Crystal Growth 243
  
  Pages: 129-133
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205015
[Patent] 「加熱プレス機」2007
- Inventor(s)
  川崎宏治, 青柳克信
- Industrial Property Rights Holder
  東京工業大学
- Industrial Property Number
  2007-018879
- Filing Date
  2007
- Data Source
  KAKENHI-PROJECT-15GS0207
[Patent] レーザーリフトオフ法およびレーザーリフトオフ装置2005
- Inventor(s)
  川崎宏治, 青柳克信
- Industrial Property Rights Holder
  東京工業大学
- Industrial Property Number
  2005-342734
- Filing Date
  2005-11-28
- Data Source
  KAKENHI-PROJECT-15GS0207

1. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 10 results

# of Collaborated Products: 0 results
2. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 7 results

# of Collaborated Products: 4 results
3. HIRAYAMA Hideki (70270593)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. 古川静二郎 (60016318)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
5. 佐々木公洋 (40162359)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
6. TAKEUCHI Misaichi (60284585)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
7. SEGAWA Yusaburo (30087473)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. FUJII Kenichi (10189988)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TSUKAGOSHI Kazuhito (50322665)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. AJIKI Hiroshi (60283735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. KANDA Akinobu (30281637)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. YOSHIDA Hiroshi (30133929)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. ISHIBASHI KOJI (30211048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. INOUE Shinnichiro (20391865)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. MATSUMOTO Yuji (60302981)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. KOINUMA Hideomi (70011187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 松村英樹 (90111682)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 岩井荘八 (40087474)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 前田瑞夫 (10165657)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 荒川泰彦 (30134638)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. SHINYA Norio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. DEN Akiharu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KAWASAKI Koji 川崎 宏治

Research Projects

Research Products

Co-Researchers

AlGaN系縦型高効率深紫外発光デバイスの研究Principal Investigator

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INFRARED LIGHT CONTROL OF SINGLE-ELECTRON SPIN IN THE NITRIDE QUANTUM DOTS AND ITS APPLICATIONPrincipal Investigator

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Research Field

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Principal Investigator

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Study on vertical coupled quantum dots fabrication using selective area growth of nitride nano-pillarsPrincipal Investigator

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Principal Investigator

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表面エネルギー変調による高均一サイズ窒化ガリウム量子ドットの自然形成Principal Investigator

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弗化物中の埋込ガリウムヒ素三次元量子ドット構造の物性と応用Principal Investigator

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光の干渉効果を用いた表面光吸収分光法による表面改質エピタキシ-のその場観察Principal Investigator

Principal Investigator

KAWASAKI Koji 川崎宏治