Tsutsui Kazuo 筒井一生

… Alternative Names

TSUTSUI Kazuo 筒井一生

筒井一生ツツイカズオ

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Researcher Number	60188589
Other IDs
External Links
Affiliation (Current)	2022: 東京工業大学, 科学技術創成研究院, 教授
Affiliation (based on the past Project Information) *help	2016 – 2022: 東京工業大学, 科学技術創成研究院, 教授 2015: 東京工業大学, 大学院総合理工学研究科, 教授 2014 – 2015: 東京工業大学, 総合理工学研究科(研究院), 教授 2009 – 2010: Tokyo Institute of Technology, 大学院・総合理工学研究科, 教授 2008: Tokyo Institute of Technology, 大学院・総合理工学研究科(研究院), 准教授 … More 2007 – 2008: 東京工業大学, 大学院・総合理工学研究科, 准教授 2005 – 2006: Tokyo Institute of Technology, Intercisciplinary Graduate School of Science and Engineering, Associate Professor, 大学院総合理工学研究科, 助教授 2004 – 2005: 東京工業大学, 大学院・総合理工学研究科, 助教授 1993 – 2002: 東京工業大学, 大学院・総合理工学研究科, 助教授 1991: 東京工業大学, 総合理工学研究科, 助教授 1986 – 1988: 東京工業大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering / 電子材料工学 / Science and Engineering / 表面界面物性 / 電子デバイス・機器工学 / Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Science and Engineering / Electronic materials/Electric materials … More / Applied optics/Quantum optical engineering / Applied materials / Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related Less
Keywords	Principal Investigator 弗化物 / CaF_2 / 電子ビーム / 表面改質 / 自然形成 / CdF_2 / 共鳴トンネル / CaF2 / CdF2 / 選択成長 … More / GaAs / ヘテロエピタキシー / シリコン / フッ化物 / 量子ドット / 位置制御 / 超薄膜 / 無機レジスト / ガリウム / 分子線エピタキシ- / 単電子 / ヘテロ構造 / 電子デバイス / 半導体 / 界面制御 / 電気・電子材料 / ZnSe / Fluoride / resonant tunneling / 混晶 / MgF2 / SrF2 / 立体チャネル / FinFET / GaN / 電子ビ-ム / 量子細線 / 表面光吸収法 / その場観察 / P(リン) / P偏光 / ブル-スタ-角 / 電子線 / ローテーショナル・ツイン / 双晶 / X線CTR法 / 自己組織的形成 / 量子構造 / 微細加工 / フッ化カドミウム / n型伝導 / ガドリニウム / 金属ドット / クーロンブロッケード / 多重トンネル接合 / 金属ドットアレイ / トンネル接合 / 表面不活性 / ゲルマニウム / シリサイド / 化学反応抑制 / バッファ層 / エピタキシャルシリサイド / ニッケルシリサイド / 量子井戸 / トンネル現象 / 不純物ドーピング / 光電子ホログラフィー / 不純物 / シリコン(Si) / ヒ素(As) / 二硫化モリブデン(MoS2) / 原子配列構造 / 電気的活性化 / 原子ホログラフィー / 電子状態 / 層状物質 / 光電子回折 / シリコン（Si） / ヒ素（As） / 二硫化モリブデン（MoS2） / 半導体物性 / 砒素 / 二硫化モリブデン / 硫化モリブデン / 半導体の不純物 / 活性サイト / 半導体デバイス / ボロン / イオン性度 / ヘテロエピタキシ- / イオン性度制御層 / II-VI族化合物 / IV-V族化合物 / SrF_2 / ヘテロ界面 / エピタキシャル成長 / ionicity / heteroepitaxy / interface control / 量子効果デバイス / 集積化 / quantum devices / integration / 弗化物混晶 / バンドエンジニアリング / 伝導帯端不連続 / 超薄膜ヘテル / 弗化カルシウム / 弗化カドミウム / fluoride alloy system / band enginnering / heterosutructures / band discontinuity / 格子整合 / MgF_2 / Si / 超薄膜ヘテロ / トンネル / Lattice matching / Resonant tunneling / Alloy crystal / パワーデバイス / 窒化ガリウムGaN / トランジスタ / GaNデバイス / 結晶成長 / 窒化ガリウム … More Except Principal Investigator MOSFET / 活性サイト / ドーパント / 光電子ホログラフィー / 蛍光X線ホログラフィー / 表面界面ホログラフィー / 電子回折イメージング / 第一原理計算 / 不純物 / 先端材料 / 近接場光 / ロ-テ-ショナル・ツイン / 回転双晶 / ヘテロエピタキシ- / GaAs / 弗化物 / (111)面 / 2段階成長 / ばらつき / ゆらぎ / CMOS / ダブルゲート / FinFET / シリサイド / 感度解析 / トランジスタ / 3次元構造 / ロバストネス / 特性ばらつき / ショットキー / オン電流 / 3次元 / ショットキー接合 / 数値解析 / 三次元構造MOSFET / しきい値 / Schottky source / drain / エネルギー障壁 / 短チャネル効果 / Niシリサイド / 界面 / ナノ物質 / ホログラフィー / 表面・界面 / ドーバント / 光化学気相堆積 / ファイバ / プローブ / フォトマスク / 近接場 / 気相化学堆積 / photochemical vapor deposition / near-field / fiber / probe / photomask / フォトニック結晶 / 自然放出光制御 / 自然放出寿命 / 位相制御領域 / マイクロマニピュレイション法 / マイクロマニピュレーション法 / 無しきい値レーザー / リングレーザー / 選択結晶成長 / Photonic Crystals / Spontaneous Emission Control / Spontaneous Emission Life Time / Spatial Phase Control Regions / Micromanipulation Technogoly / 光集積回路 / 量子ドット / 光スイッチ / 励起子 / 導波路 / 堆積 / 解離 / optical near field / Photonic integrated circuit / Quantum dot / Optical switch / Exciton / Waveguide / 固相成長 / 横方向成長 / SOI / 非晶質シリコン / 三次元集積回路 / 選択ドーピング / シリコン / 選択ドープ法 / 横方向固相成長 / 選択ドープ構造 / エピタキシャル成長 / イオン注入 / lateral solid phase epitaxy / selective doping / silicon-on-insulator / amorphous Si / 蛍光Ｘ線ホログラフィー / 蛍光X線ﾎﾛｸﾞﾗﾌｨｰ / ゲルマニウム / ピゾ抵抗効果 / 水素アニール / ホール効果 / 格子欠陥 / 酸素ドナー / 低温プロセス / 酸化膜 / 反転層 / スパッタ法 / スピンオングラス法 / ピエゾ抵抗効果 / 結晶歪 / 非線形性 / スピン・オン・グラス / 歪 / 原子分解能ホログラフィー / 機能物質 / 局所機能構造科学 / 電子デバイス / 半導体 / パワーデバイス Less

高移動度二次元正孔ガスpチャネルGaNトランジスタの開発
- Principal Investigator
  
  星井拓也
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Piezoresistance Effects of p-type Ge
- Principal Investigator
  
  松田和典
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokushima Bunri University
Management and research support by platform construction of 3D active-site science
- Principal Investigator
  
  大門寛
- Project Period (FY)
  2019
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Toyota Physical and Chemical Research Institute
GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structuresPrincipal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Construction of oversea base and international network for 3D active site science
- Principal Investigator
  
  DAIMON Hiroshi
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Nara Institute of Science and Technology
GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area GrowthPrincipal Investigator
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2015 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Supervision and research support by platform construction of 3D active-site science
- Principal Investigator
  
  DAIMON Hiroshi
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Nara Institute of Science and Technology
Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devicesPrincipal Investigator
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Fabrication of fluoride resonant tunneling devices on Si with stable electrical properties by using surface inactive layersPrincipal Investigator
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
Robustness of Three-Dimensional MOSFETs
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Study of Fluoride Ultra-thin Hetero Structure Devices with Complete Lattice Matched StructuresPrincipal Investigator
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
Study on operation of a nano-photonic integrated circuit by optical near field and deposition of semiconductor nano-patterns
- Principal Investigator
  
  OHTSU Motoichi
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Tokyo Institute of Technology
Band Engineering on Alloy of Fluorides for HeterodevicesPrincipal Investigator
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
電子線位置制御による高密度極微電極島の自然形成Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tokyo Institute of Technology
Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1998 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (B)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
  The Institute of Physical and Chemical Research
Integrated Gountum Devices using Fluoride HeterostructuresPrincipal Investigator
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
電子線位置制御による高密度極微電極島の自然形成Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
Development of nanometric photochemical vapor deposition by optical near field
- Principal Investigator
  
  OHTSU Motoichi
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
エピタキシャル弗化物による超微細加工技術の研究Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
n型伝導フッ化カドミウムの分子線エピタキシャル成長の研究Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
エピタキシャル弗化物による超微細加工技術の研究Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
エピタキシャル沸化物による超微細加工技術の研究Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
"Interface Controlled Heteroepitaxy of Ionic Crystals and Covalent Crystals Using Ionicity Control Layr"Principal Investigator
- Principal Investigator
  
  TSUTSUI Kazuo
- Project Period (FY)
  1993 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
電子線直接描画選択成長法による量子細線形成法の研究Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
ヘテロ成長におけるロ-テ-ショナル・ツイン生成機構の解明とその制御
- Principal Investigator
  
  古川静二郎
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
表面光吸収法を用いたその場観察による電子ビーム表面改質エピタキシーの機構解明Principal Investigator
- Principal Investigator
  
  古川静二郎, 筒井一生
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo Institute of Technology
ヘテロ成長におけるローテーショナル・ツイン生成機構の解明とその制御Principal Investigator
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
Lateral Solid Phase Epitaxy of Selectively Doped Si Films
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Tokyo Institute of Technology

[Book] Jpn. J. Appl. Phys. Selected Topics in Applied Physics “Frontier of active site science: new insights on material functions2019
- Author(s)
  Hiroshi Daimon, Koichi Hayashi, Toyohiko Kinoshita, and Kazuo Tsutsui
- Total Pages
  200
- Publisher
  IOP Science
- Data Source
  KAKENHI-WRAPUP-19H05451
[Journal Article] Peculiar temperature dependence of dynamical sound speed in liquid Se50Te50 by inelastic x-ray scattering2020
- Author(s)
  Inui M、Kajihara Y、Tsuchiya Y、Hosokawa S、Matsuda K、Uchiyama H、Tsutsui S、Baron A Q R
- Journal Title
  
  Journal of Physics: Condensed Matter
  
  Volume: 32 Pages: 214003-214003
- DOI
  10.1088/1361-648x/ab6d8e
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18738, KAKENHI-WRAPUP-19H05451, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-18H01142
[Journal Article] Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography2020
- Author(s)
  TSUTSUI Kazuo、MORIKAWA Yoshitada
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 010503-1-8 Issue: 1 Pages: 010503-010503
- DOI
  10.7567/1347-4065/ab603e
- NAID
  210000157782
- ISSN
  0021-4922, 1347-4065
- Year and Date
  2020-01-01
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-WRAPUP-19H05451
[Journal Article] Local Structure and Atomic Dynamics in Fe2VAl Heusler-type Thermoelectric Material: The Effect of Heavy Element Doping2020
- Author(s)
  K. Kimura, K. Yamamoto, K. Hayashi, S. Tsutsui, N. Happo, S. Yamazoe, H. Miyazaki, S. Nakagami, J. R. Stellhorn, S. Hosokawa, T. Matsushita, H. Tajiri, A. K. R. Ang, Y. Nishino
- Journal Title
  
  Physical Review B
  
  Volume: 101 Pages: 024302-024302
- DOI
  10.1103/physrevb.101.024302
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06771, KAKENHI-PROJECT-18K04748, KAKENHI-PROJECT-18K18738, KAKENHI-PUBLICLY-19H05126, KAKENHI-WRAPUP-19H05451, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-17K14801, KAKENHI-PROJECT-19H00655
[Journal Article] Detection of collective optic excitations in molten NaI2019
- Author(s)
  Hosokawa、Inui、Bryk、Mryglod、Pilgrim、Kajihara、Matsuda、Ohmasa、Tsutsui
- Journal Title
  
  Condensed Matter Physics
  
  Volume: 22 Pages: 43602-43602
- DOI
  10.5488/cmp.22.43602
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18738, KAKENHI-WRAPUP-19H05451, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-18H01142
[Journal Article] Dynamical sound speed and structural inhomogeneity in liquid Te studied by inelastic x-ray scattering2019
- Author(s)
  M. Inui, Y. Kajihara, S. Hosokawa, K. Matsuda, Y. Tsuchiya, S. Tsutsui, and A. Q. R. Baron
- Journal Title
  
  J. Non-Crystalline Solids: X
  
  Volume: 1 Pages: 100006-100006
- DOI
  10.1016/j.nocx.2018.100006
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18738, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-18H01142, KAKENHI-PROJECT-16K05475, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Nonlinear Piezoresistance Coefficients of Semiconductors2019
- Author(s)
  Kazunori Matsuda, Hiroki Uyama and Kazuo Tsutsui
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Pages: 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04478
[Journal Article] Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing2019
- Author(s)
  Shimizu Jun'ichi、Ohashi Takumi、Matsuura Kentaro、Muneta Iriya、Kuniyuki Kakushima、Tsutsui Kazuo、Ikarashi Nobuyuki、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 7 Pages: 2-6
- DOI
  10.1109/jeds.2018.2854633
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Peculiar atomic dynamics in liquid GeTe with asymmetrical bonding: observation by inelastic x-ray scattering2018
- Author(s)
  M. Inui, A. Koura, Y. Kajihara, S. Hosokawa, A. Chiba, K. Kimura, F. Shimojo, S. Tsutsui, and A. Q. R. Baron
- Journal Title
  
  Phys. Rev. B
  
  Volume: 97 Pages: 174203-174203
- DOI
  10.1103/physrevb.97.174203
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18738, KAKENHI-PROJECT-16H06285, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-16K05475, KAKENHI-PROJECT-16K05478, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PROJECT-16K05521
[Journal Article] Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film2018
- Author(s)
  Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
- Journal Title
  
  J., Ele. Mat.
  
  Volume: 47 Pages: 3497-3497
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001
[Journal Article] Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration2018
- Author(s)
  Matsuura Kentaro、Shimizu Jun'Ichi、Toyama Mayato、Ohashi Takumi、Muneta Iriya、Ishihara Seiya、Kakushima Kuniyuki、Tsutsui Kazuo、Ogura Atsushi、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 1246-1252
- DOI
  10.1109/jeds.2018.2883133
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Phonon excitations in a single crystal Mg85Zn6Y9 with a synchronized long-period stacking ordered phase2018
- Author(s)
  S. Hosokawa, J. R. Stellhorn, H. Ikemoto, K. Mimura, K. Wakita, and N. Mamedov
- Journal Title
  
  Acta Materialia
  
  Volume: 146 Pages: 273-279
- DOI
  10.1016/j.actamat.2017.12.053
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PUBLICLY-16H01553, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-17H03431
[Journal Article] Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization2018
- Author(s)
  K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, and H. Wakabayashi
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: － Pages: 3497-3501
- DOI
  10.1007/s11664-018-6191-z
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16J11377, KAKENHI-PLANNED-26105014
[Journal Article] Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing2018
- Author(s)
 Toyama Mayato、Ohashi Takumi、Matsuura Kentaro、Shimizu Jun’ichi、Muneta Iriya、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 57 Issue: 7S2 Pages: 07MA04-07MA04
- DOI
 10.7567/jjap.57.07ma04
- NAID
 210000149377
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Static and dynamic structures of liquid Ba8Ga16Sn30: a melt of the thermoelectric clathrate compounds2018
- Author(s)
  M. Inui, K. Suekuni, Y. Kajihara, S. Hosokawa, T. Takabatake, Y. Nakajima, K. Matsuda, K. Ohara, H. Uchiyama, and S. Tsutsui
- Journal Title
  
  J. Phys.: Condens. Matter
  
  Volume: 30 Pages: 455101-455101
- DOI
  10.1088/1361-648x/aae3f3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K18738, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-18H01142, KAKENHI-PROJECT-16K05475, KAKENHI-PROJECT-17K14418, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Viscoelastic anomaly accompanying anti-crossing behavior in liquid As2Se32018
- Author(s)
  M. Inui, A. Q. R. Baron, Y. Kajihara, K. Matsuda, S. Hosokawa, K. Kimura, Y. Tsuchiya, F. Shimojo, M. Yao, S. Tsutsui, D. Ishikawa, and K. Tamura
- Journal Title
  
  J. Phys.: Condens. Matter
  
  Volume: 30
- DOI
  10.1088/1361-648x/aacab5
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18738, KAKENHI-PROJECT-16H06285, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-18H01142, KAKENHI-PROJECT-16K05475, KAKENHI-PROJECT-16K05478, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness2017
- Author(s)
  T. Ohashi, I. Muneta, K. Matsuura, S. Ishihara, Y. Hibino, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, and H. Wakabayashi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10
- NAID
  210000135806
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001
[Journal Article] Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography2017
- Author(s)
  Tsutsui Kazuo、Matsushita Tomohiro、Natori Kotaro、Muro Takayuki、Morikawa Yoshitada、Hoshii Takuya、Kakushima Kuniyuki、Wakabayashi Hitoshi、Hayashi Kouichi、Matsui Fumihiko、Kinoshita Toyohiko
- Journal Title
  
  Nano Lett.
  
  Volume: 17 Pages: 7533-7538
- DOI
  10.1021/acs.nanolett.7b03467
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105007, KAKENHI-PLANNED-26105013, KAKENHI-PLANNED-26105014, KAKENHI-PROJECT-15KK0167, KAKENHI-PLANNED-26105010, KAKENHI-PROJECT-17H02911
[Journal Article] Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness2017
- Author(s)
  T. Ohashi, I. Muneta, K. Matsuura, S. Ishihara, Y. Hibino, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura, and H. Wakabayashi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10
- NAID
  210000135806
- Peer Reviewed
- Data Source
  KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Quantitative analysis of sputter-deposited MoS2 properties on SiO2 substrate roughness2017
- Author(s)
  Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Journal Title
  
  Applied Physics Express (APEX)
  
  Volume: 10
- Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Dispersion relations of the acoustic modes in divalent liquid metals2017
- Author(s)
  Inui Masanori、Kajihara Yukio、Kimura Koji、Matsuda Kazuhiro、Miyatake Tetsu、Chiba Ayano、Hosokawa Shinya、Tsutsui Satoshi、Baron Alfred Q. R.
- Journal Title
  
  European Physical Journal: Web of Conferences
  
  Volume: 151 Pages: 06002-06002
- DOI
  10.1051/epjconf/201715106002
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K05475, KAKENHI-PROJECT-16K05521, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PROJECT-16H06285, KAKENHI-PUBLICLY-16H01553, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814, KAKENHI-PROJECT-15K05209
[Journal Article] Impurity effects in the microscopic elastic properties of polycrystalline Mg-Zn-Y alloys with a synchronized long-period stacking ordered phase2017
- Author(s)
  S. Hosokawa, K. Kimura, M. Yamasaki, Y. Kawamura, K. Yoshida, M. Inui, S. Tsutsui, A. Q. R. Baron, Y. Kawakita, and S. Itoh
- Journal Title
  
  Journal of Aolloys and Compounds
  
  Volume: 695 Pages: 426-432
- DOI
  10.1016/j.jallcom.2016.10.266
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-WRAPUP-16H01701, KAKENHI-PROJECT-26610118, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PROJECT-16H06285, KAKENHI-PROJECT-16H02404
[Journal Article] Phonon Excitations in Pd40Ni40P20 Bulk Metallic Glass by Inelastic X-Ray Scattering2017
- Author(s)
  S. Hosokawa, M. Inui, Y. Kajihara, T. Ichitsubo, K. Matsuda, H. Kato, A. Chiba, K. Kimura, K. Kamimura, S. Tsutsui, H. Uchiyama, and A. Q. R. Baron
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 879 Pages: 767-772
- DOI
  10.4028/www.scientific.net/msf.879.767
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26610118, KAKENHI-PROJECT-15K05209, KAKENHI-PROJECT-16K05475, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Asymmetrical bonding in liquid Bi disentangled by inelastic X-ray scattering2017
- Author(s)
  Inui Masanori、Kajihara Yukio、Munejiri Shuji、Hosokawa Shinya、Chiba Ayano、Ohara Koji、Tsutsui Satoshi、Baron Alfred Q. R.
- Journal Title
  
  European Physical Journal: Web of Conferences
  
  Volume: 151 Pages: 06001-06001
- DOI
  10.1051/epjconf/201715106001
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K05475, KAKENHI-PROJECT-16K05521, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PROJECT-16H06285, KAKENHI-PUBLICLY-16H01553, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814
[Journal Article] "High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics：accepted and to be published
  
  Volume: -
- DOI
  10.1021/nl303583v
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Inelastic X-ray scattering on liquid benzene analyzed using a generalized Langevin equation2017
- Author(s)
  Yoshida Koji、Fukuyama Nami、Yamaguchi Toshio、Hosokawa Shinya、Uchiyama Hiroshi、Tsutsui Satoshi、Baron Alfred Q.R.
- Journal Title
  
  Chemical Physics Letters
  
  Volume: 680 Pages: 1-5
- DOI
  10.1016/j.cplett.2017.05.005
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PROJECT-16H06285, KAKENHI-PUBLICLY-16H01553, KAKENHI-ORGANIZER-26105001, KAKENHI-PROJECT-17H02814
[Journal Article] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness2017
- Author(s)
 Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Journal Title
 
 Applied Physics Express
 
 Volume: 10 Issue: 4 Pages: 041202-041202
- DOI
 10.7567/apex.10.041202
- NAID
 210000135806
- ISSN
 1882-0778, 1882-0786
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-16J11377, KAKENHI-PLANNED-26105014
[Journal Article] La2O3 gate dielectrics for AlGaN/GaN HEMT2016
- Author(s)
  J. Chen, T. Kawanago, H. Wakabayashi, K. Tsutsui, H. Iwai, D. Nohata, H. Nohira, K. Kakushima
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 60 Pages: 16-19
- DOI
  10.1016/j.microrel.2016.02.004
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Chemical and orbital fluctuations in Ba3CuSb2O92016
- Author(s)
  Y. Wakabayashi, D. Nakajima, Y. Ishiguro, K. Kimura, T. Kimura, S. Tsutsui, A. Q. R. Baron, K. Hayashi, N. Happo, S. Hosokawa, K. Ohwada, and S. Nakatsuji
- Journal Title
  
  Phys. Rev. B
  
  Volume: 93
- NAID
  120006697262
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors2016
- Author(s)
  Y. Takei, K. Tsutsui, W. Saito, K. Kakushima, H. Wakabayashi, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55-4 Issue: 4 Pages: 040306-040306
- DOI
  10.7567/jjap.55.040306
- NAID
  210000146222
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Chemical and orbital fluctuations inBa3CuSb2O92016
- Author(s)
  Y. Wakabayashi, D. Nakajima, Y. Ishiguro, K. Kimura, T. Kimura, S. Tsutsui, A. Q. R. Baron, K. Hayashi, N. Happo, S. Hosokawa, K. Ohwada, and S. Nakatsuji
- Journal Title
  
  PHYSICAL REVIEW B
  
  Volume: 93 Pages: 245117-245117
- DOI
  10.1103/physrevb.93.245117
- NAID
  120006697262
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-16H01553, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105008, KAKENHI-PLANNED-26105013, KAKENHI-PROJECT-25286040, KAKENHI-PROJECT-26287080, KAKENHI-PROJECT-16H06285, KAKENHI-PLANNED-26105006, KAKENHI-PROJECT-16H02209
[Journal Article] Chemical and orbital fluctuations in Ba3CuSb2O92016
- Author(s)
  Y. Wakabayashi, D. Nakajima, Y. Ishiguro, K. Kimura, T. Kimura, S. Tsutsui, A. Q. R. Baron, K. Hayashi, N. Happo, S. Hosokawa, K. Ohwada, and S. Nakatsuji
- Journal Title
  
  Phys. Rev. B
  
  Volume: 93 Pages: 245117-245117
- NAID
  120006697262
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs2015
- Author(s)
 Takumi Ohashi, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura and Hitoshi Wakabayashi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 54 Issue: 4S Pages: 04DN08-04DN08
- DOI
 10.7567/jjap.54.04dn08
- NAID
 210000145087
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-25889022, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers2015
- Author(s)
  Y. Takei, M. Kamiya, K. Tsutsui, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai
- Journal Title
  
  Physica Status Solidi A
  
  Volume: -
- DOI
  10.1002/pssa.201431645
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105014
[Journal Article] A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer2014
- Author(s)
  M. Hadi, S. Kano, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 29 Pages: 115030-115030
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-26105001
[Journal Article] Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures2014
- Author(s)
  Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka H. Iwai
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Pages: 265-270
- Data Source
  KAKENHI-ORGANIZER-26105001
[Journal Article] Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures2014
- Author(s)
  Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka H. Iwai
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Pages: 265-270
- Data Source
  KAKENHI-PLANNED-26105014
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors : Separation of Short Channel Effects2010
- Author(s)
  Y.Kobayashi, K.Tsutsui, K.Kakushima, P.Ahmet, V.P.Rao, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physics 49(掲載決定)
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects2010
- Author(s)
  Y. Koyabashi, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys Vol.49
  
  Pages: 44201-44201
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y. Kobayasih, K. Kakushima, P. Ahmet, V.R. Rao, K. Tsutsui, H. Iwai
- Journal Title
  
  Microelectronics Reliability Vol.50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans Vol.16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Growth of Ultra Thin Fluoride Heterostructures on Ge(111) for Quantum Devices2009
- Author(s)
  Takao Oshita, Keita Takahashi, Kazuo Tsutsui
- Journal Title
  
  Journal of Crystal Growth vol.311
  
  Pages: 2224-2226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360004
[Journal Article] Si基板上のフッ化物系共鳴トンネルダイオード2009
- Author(s)
  筒井一生
- Journal Title
  
  応用物理 78巻, 第5号
  
  Pages: 432-436
- NAID
  10024751771
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360004
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
- Journal Title
  
  ECS Transactions 16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Growth of Ultra Thin Fluoride Heterostructures on Ge(lll)for Quantum Devices2009
- Author(s)
  T. Oshita, K. Takahashi, K. Tsutsui
- Journal Title
  
  Journal of Crystal Growth 311(7)
  
  Pages: 2224-2226
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360004
[Journal Article] Si基板上のフッ化物系共鳴トンネルグイオード2009
- Author(s)
  筒井一生
- Journal Title
  
  応用物理 78
  
  Pages: 432-436
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360004
[Journal Article] Growth of Fluoride Quantum Well Heterostructures for Resonant Tunneling Devices on Si Substrates2008
- Author(s)
  Kazuo Tsutsui, Takao Oshita, So Watanabe, Motoki Maeda
- Journal Title
  
  ECS Transaction Vol.13, No.2
  
  Pages: 253-262
- Data Source
  KAKENHI-PROJECT-20360004
[Journal Article] Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi_22008
- Author(s)
  Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering 85
  
  Pages: 315-319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni-silicide Films on Heavily Doped n^+ and P^+ Si Substrates2008
- Author(s)
  Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow and Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni silicide Films on Heavily Doped n+ and p+ Si Substrates2008
- Author(s)
  P. Ahmet, T. Shiozawa, K. Nagahiro, T. Nagata, K. Kakushima, K. Tsutsui, T. Chikyo, H. Iwai
- Journal Title
  
  Microelectronic Engineering Vol.85
  
  Pages: 1642-1645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] 弗化物共鳴トンネル素子とそのCMOS集積化への展望2008
- Author(s)
  筒井一生
- Journal Title
  
  電子情報通信学会誌 vol.91, No.2
  
  Pages: 147-149
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360004
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, and H. Iwai
- Journal Title
  
  ECS Transaction Vol. 6, No. 4
  
  Pages: 83-88
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  ECS Transaction 6
  
  Pages: 83-88
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y.Kobahashi, K.Tsutsui, K.Kakushima, V.Hariharan, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  SOI Device Technology 13 (ECS Transaction-Chicago) 3(出版予定)(掲載決定)
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y. Kobayashi, V.R. Manoj, K. Tsutsui, V. Hariharan, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  IEICE Trans. on Electronics Vol.E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahmet, K. Kakushima and H. Iwai
- Journal Title
  
  ECS Transaction 11
  
  Pages: 207-213
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y.Kobayashi, C.R.Manoj, K.Tsutsui, V.Hariharan, K.Kakushima, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  IEICE Transactions on Electronics (出版予定)(掲載決定)
- NAID
  110007541196
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions vol. E90-C, No.10
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Crystalline structure of epitaxial Ca_xMg_<1-x>F_2 alloys on Si(100) and Si(111) substrates2006
- Author(s)
 M.Maeda, N.Matsudo, S.Watanabe, K.Tsutsui
- Journal Title
 
 Thin Solid Films (印刷中)
- Description
 「研究成果報告書概要(和文)」より
- Data Source
 KAKENHI-PROJECT-16560003
[Journal Article] Crystalline structure of epitaxial Ca_xMg_<1-x>F_2 alloys on Si(100) and Si(111) substrates2006
- Author(s)
 M.Maeda, N.Matsudo, S.Watanabe, K.Tsutsui
- Journal Title
 
 Thin Solid Films (to be published)
- Description
 「研究成果報告書概要(欧文)」より
- Data Source
 KAKENHI-PROJECT-16560003
[Journal Article] Fluoride Resonant Tunneling Diodes on Si Substrates improved by Additional Thermal Oxidation Process2005
- Author(s)
  S.Watanabe, M.Maeda, T.Sugisaki, K.Tsutsui
- Journal Title
  
  Japanese Journal of Applied Physics 44・4B
  
  Pages: 2637-2637
- NAID
  10022539504
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Surface Modification of Si Substrates by CdF_2 Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures2005
- Author(s)
  M.Maeda, J.Omae, S.Watanabe, Y.Toriumi, K.Tsutsui
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Surface Modification of Si Substrates by CdF_2 Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures2005
- Author(s)
  M.Maeda, J.Omae, S.Watanabe, Y.Toriumi, K.Tsutsui
- Journal Title
  
  Journal of Crystal Growth 278
  
  Pages: 643-643
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Growth characteristics of ultra-thin epitaxial Ca_xMg_<1-x>F_2 alloys on Si(111) substrates2005
- Author(s)
 M.Maeda, N.Matsudo, S.Watanabe, K.Tsutsui
- Journal Title
 
 Journal of Crystal Growth vol.285
 
 Pages: 572-572
- Description
 「研究成果報告書概要(欧文)」より
- Data Source
 KAKENHI-PROJECT-16560003
[Journal Article] Growth characteristics of ultra-thin epitaxial Ca_xMg_<1-x>F_2 alloys on Si(111) substrates2005
- Author(s)
 M.Maeda, N.Matsudo, S.Watanabe, K.Tsutsui
- Journal Title
 
 Journal of Crystal Growth 285
 
 Pages: 572-572
- Description
 「研究成果報告書概要(和文)」より
- Data Source
 KAKENHI-PROJECT-16560003
[Journal Article] Growth characteristics of ultra-thin epitaxial Ca_xMg_<1-x>F_2 alloys on Si(111) substrates2005
- Author(s)
 Motoki Maeda, Natsuko Matsudo, So Watanabe, Kazuo Tsutsui
- Journal Title
 
 Journal of Crystal Growth 285
 
 Pages: 572-578
- Data Source
 KAKENHI-PROJECT-16560003
[Journal Article] Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process2005
- Author(s)
  S.Watanabe, M.Maeda, T.Sugisaki, K.Tsutsui
- Journal Title
  
  Japanese Journal of Applied Physics vol.44
  
  Pages: 2637-2637
- NAID
  10022539504
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process2005
- Author(s)
  So Watanabe, Motoki Maeda, Tsuyoshi Sugisaki, Kazuo Tsutsui
- Journal Title
  
  Japanese Journal of Applied Physics 44・4B
  
  Pages: 2637-2641
- NAID
  10022539504
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Surface Modification of Si Substrates by CdF_2 Molecular Beam for Stable Growth of Fluoride Ultra-Thin Heterostructures2005
- Author(s)
  M.Maeda, J.Omae, S.Watanabe, Y.Toriumi, K.Tsutsui
- Journal Title
  
  Journal of Crystal Growth vol.278
  
  Pages: 643-643
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] CdF_2分子線により表面改質したSi(111)基板上への弗化物共鳴トンネルダイオードの製作2004
- Author(s)
  大前譲治, 前田元輝, 筒井一生
- Journal Title
  
  第65回応用物理学会学術連合講演会予稿集
  
  Pages: 1231-1231
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] 弗化物共鳴トンネルダイオードにおける酸化効果を用いたCaF_2バリア層の絶縁性向上2004
- Author(s)
  渡邊聡, 杉崎剛, 前田元輝, 筒井一生
- Journal Title
  
  第65回応用物理学会学術連合講演会予稿集
  
  Pages: 1240-1240
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Ca_xMg_<1-x>F_2混晶薄膜のSi(111)基板上へのエピキシャル成長2004
- Author(s)
 前田元輝, 松土夏子, 渡邊聡, 筒井一生
- Journal Title
 
 第65回応用物理学会学術連合講演会予稿集
 
 Pages: 1240-1240
- Data Source
 KAKENHI-PROJECT-16560003
[Journal Article] 弗化物3重障壁共鳴トンネルダイオードにおける混晶井戸の有効性2004
- Author(s)
  鳴海陽平, 齋藤格広, 渡邊聡, 前田元輝, 筒井一生
- Journal Title
  
  第65回応用物理学会学術連合講演会予稿集
  
  Pages: 1223-1223
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process2004
- Author(s)
  S.Watanabe, M.Maeda, T.Sugisaki, K.Tsutsui
- Journal Title
  
  Ext.Abs.of 2004 Int.Conf.on Solid State Devices and Materials
  
  Pages: 606-607
- NAID
  10022539504
- Data Source
  KAKENHI-PROJECT-16560003
[Journal Article] Fabrication of Buried Active Layer Type Fluoride Resonant Tunneling Diodes on Si Substrates2002
- Author(s)
  S.Watanabe, H.Kambayashi, H.Sekine, K.Tsutsui
- Journal Title
  
  Domestic Conf.of Japan Soc.Applied Physics, Spring Meeting, [in Japanese] (28a-K-1)
  
  Pages: 933-933
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12650304
[Journal Article] Si基板上の活性層埋め込み型弗化物共鳴トンネルダイオードの製作2002
- Author(s)
  渡邊聡, 神林宏, 関根広志, 筒井一生
- Journal Title
  
  第49回応用物理学関係連合講演会予稿集(講演番号28a-K-1)
  
  Pages: 933-933
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-12650304
[Journal Article] Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs2002
- Author(s)
  Toshiaki Terayama, Hiroshi Sekine, Kazuo Tsutsui
- Journal Title
  
  Jpn.J.Applied Physics 41(4B)
  
  Pages: 2598-2601
- NAID
  110006341219
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12650304
[Journal Article] Cd-rich Ca_xCd_<1-x>F_2混晶のSi(111)基板上へのエピタキシャル成長2002
- Author(s)
 前田元輝, 神林宏, 筒井一生
- Journal Title
 
 第49回応用物理学関係連合講演会予稿集(講演番号27p-YH-2)
 
 Pages: 1374-1374
- Description
 「研究成果報告書概要(和文)」より
- Data Source
 KAKENHI-PROJECT-12650304
[Journal Article] Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs2002
- Author(s)
  Toshiaki Terayama, Hiroshi Sekine, Kazuo Tsutsui
- Journal Title
  
  Japanese J. Applied Physics 41(4B)
  
  Pages: 2598-2601
- NAID
  110006341219
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-12650304
[Journal Article] Growth Characteristics of Ca_xCd_<1-x>F_2 Films on Si Substrates Using CaF_2 Buffer Layer2002
- Author(s)
 H.Kambayashi, T.Gotoh, H.Maeda, K.Tsutsui
- Journal Title
 
 J.of Crystal Growth vol.237-239
 
 Pages: 2061-2064
- Description
 「研究成果報告書概要(欧文)」より
- Data Source
 KAKENHI-PROJECT-12650304
[Journal Article] Epitaxial growth of Cd-rich Ca_xCd_<1-x>F_2 on Si (111) Substrates2002
- Author(s)
 M.Maeda, H.Kambayashi, K.Tsutsui
- Journal Title
 
 Domestic Conf.of Japan Soc.Applied Physics, Spring Meeting, [in Japanese] (27p-YH-2)
 
 Pages: 1374-1374
- Description
 「研究成果報告書概要(欧文)」より
- Data Source
 KAKENHI-PROJECT-12650304
[Journal Article] Growth Characteristics of Ca_xCd_<1-x>F_2 Films on Si Substrates Using CaF_2 Buffer Layer2002
- Author(s)
 H.Kanibayashi, T.Gotoh, H.Maeda, K.Tsutsui
- Journal Title
 
 J. of Crystal Growth 237-239
 
 Pages: 2061-2064
- Description
 「研究成果報告書概要(和文)」より
- Data Source
 KAKENHI-PROJECT-12650304
[Journal Article] Electrical Characteristics of CaCdF_2 Films grown on Si(111) substrates2001
- Author(s)
  H.Kambayashi, H.Maeda, K.Tsutsui
- Journal Title
  
  Domestic Conf.of Japan Soc.Applied Physics, Spring Meeting, [in Japanese] (14a-YB-7)
  
  Pages: 1052-1052
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12650304
[Journal Article] Si基板上のエピタキシャルCaCdF_2混晶層の電気的特性2001
- Author(s)
  神林宏, 前田寛, 筒井一生
- Journal Title
  
  第62回応用物理学会学術講演会予稿集(講演番号14a-YB-7)
  
  Pages: 1052-1052
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-12650304
[Patent] ｐチャネルＧａＮＭＯＳデバイス及びその製造方法2021
- Inventor(s)
  星井拓也、筒井一生
- Industrial Property Rights Holder
  星井拓也、筒井一生
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-137005
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-21K04172
[Presentation] 横型GaN系FinFETにおける異なるチャネル伝導形態の比較検討2021
- Author(s)
  久恒悠介、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] GaN FinFETの低オン抵抗・高耐圧化に向けたドリフト領域拡幅の検討2021
- Author(s)
  久恒悠介、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 窒素プラズマ ALE による P チャネル GaN HFET の特性向上2021
- Author(s)
  木村匠之介、三浦克之、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04172
[Presentation] 選択成長法を用いたGaN 系FinFET2021
- Author(s)
  筒井一生,濱田拓也,高山研,金相佑,星井拓也,角嶋邦之,若林整,高橋言緒,井手利英,清水三聡
- Organizer
  電気学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] p型Geの異常ピエゾ抵抗係数2021
- Author(s)
  松田，筒井，山本，長岡，梶山
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04478
[Presentation] 選択成長法を用いたGaN FinFETの作製：成長窓形成プロセスの検討2021
- Author(s)
  太田貴士、佐々木満考、高山研、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 分極接合基板のC-V特性において二段階変化が起こる要因の解明2021
- Author(s)
  鬼村和志、星井拓也、松橋泰平、沖田寛昌、角嶋邦之、若林整、筒井一生、中島昭
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04172
[Presentation] Geのピエゾ抵抗効果（Ⅰ）2020
- Author(s)
  松田和典，生田壮馬，中谷友哉，長岡史郎，筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04478
[Presentation] 横型GaN FinFETの構造最適化についての検討2020
- Author(s)
  久恒悠介、金相佑、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良2020
- Author(s)
  高山研、太田貴士、佐々木満孝、向井勇人、濱田拓也、高橋言雄、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング2019
- Author(s)
  筒井一生、松下智裕、名取鼓太朗、小川達博、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography2019
- Author(s)
  K. Tsutsui, K. Natori, T. Ogawa, T. Muro, T. Matsuishita, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, K. Hayashi, F. Matsui, T. Kinoshita
- Organizer
  Materials Research Meeting 2019　（MRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-WRAPUP-19H05451
[Presentation] High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing2019
- Author(s)
  Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] FinFET応用に向けた選択成長GaNチャネルの電気特性2019
- Author(s)
  濱田拓也、向井勇人、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第66回応用物理学会春期学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析2019
- Author(s)
  筒井一生
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces2019
- Author(s)
  Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, and Kazuo Tsutsui
- Organizer
  13tu Int. Conf. on Nitride Semiconductor (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析2019
- Author(s)
  筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE using Triethylgallium2019
- Author(s)
  Takuya Hoshii, Hiromasa Okita, Taihei Matsuhashi, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen-Inn Chyi, and Kazuo Tsutsui
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] GaN Fin構造選択成長における低抵抗領域の発生原因の検討2019
- Author(s)
  高山研、向井勇人、濱田拓也、高橋言緒、井手利英、清水三総、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 放射光X線を用いたTaドープFe2VAlホイスラー型熱電材料のフォノン及び局所構造解析2019
- Author(s)
  木村耕治, 山本健太, 林好一, 筒井智嗣, 山添誠司, 宮崎秀俊, 中神秀麻, J. R. Stellhorn, 細川伸也, 松下智裕, 田尻寛男, A. K. R. Ang, 西野洋一
- Organizer
  第16回日本熱電学会
- Data Source
  KAKENHI-WRAPUP-19H05451
[Presentation] 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs2019
- Author(s)
  松浦賢太朗、清水淳一、外山真矢人、大橋匠、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  応用物理学会シリコンテクノロジー分科会研究集会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減2019
- Author(s)
  松浦賢太朗、濱田昌也、坂本拓朗、谷川晴紀、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第66回応用物理学会春期学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 選択成長法を用いたGaN FinFETの作製2019
- Author(s)
  向井勇人、髙山研、濱田拓也、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング2019
- Author(s)
  筒井一生
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] Dopant structure measurements using photoelectron holography and its analysis tools2019
- Author(s)
  Tomohiro Matsushita, Takayuki Muro, Toyohiko Kinoshita, Kazuo Tsutsui, Takayoshi Yokoya, Fumihiko Matui, and Hiroshi Daimon
- Organizer
  The 40th International Conference on Vacuum Ultraviolet and X-ray Physics
- Data Source
  KAKENHI-WRAPUP-19H05451
[Presentation] 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography2019
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, and Toyohiko Kinoshita
- Organizer
  The 8th International Symposium on Control of Semiconductor Interfaces　（ISCSI-VIII)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-WRAPUP-19H05451
[Presentation] 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング2019
- Author(s)
  筒井一生
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング2019
- Author(s)
  筒井一生、松下智裕、名取鼓太朗、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測2019
- Author(s)
  筒井一生、松下智裕、名取鼓太郞、小川達博、室隆桂之、森川良忠、星井拓也、角嶋邦之、若林整、林好一、松井文彦、木下豊彦
- Organizer
  応用物理学会シリコンテクノロジー分科会研究会/電子情報通信学会SDM研究会（合同開催）
- Invited
- Data Source
  KAKENHI-WRAPUP-19H05451
[Presentation] FinFET応用に向けた選択成長GaNチャネルの電気特性2018
- Author(s)
  濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生
- Organizer
  第82回半導体・集積回路シンポジウム
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] 絶縁膜を通した硫黄粉末アニールによるスパッタMoS2膜の結晶性改善2018
- Author(s)
  濱田昌也、松浦賢太郎、谷川晴紀、大橋匠、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Analyses of 3D atomic arrangements of impurity atoms doped in Silicon by spectro-photoelectron holography technique2018
- Author(s)
  Kazuo Tsutsui
- Organizer
  Int. Workshop on Junction Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] 保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善2018
- Author(s)
  五十嵐智、松浦賢太朗、濱田昌也、谷川晴紀、坂本拓朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの貫通転位の低減2018
- Author(s)
  濱田拓也、黒岩宏紀、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate2018
- Author(s)
  Kentaro Matsuura, Jun’ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi
- Organizer
  2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去2018
- Author(s)
  谷川晴紀、松浦賢太朗、濱田昌也、坂本拓朗、宗田伊理也、星井拓也、角嶋邦之、筒井一生、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング2018
- Author(s)
  向井勇人、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Three-dimensional atomic imaging of dopants using atomic resolution holography2018
- Author(s)
  Tomohiro Matsushita, Takayuki Muro, Toyohiko Kinoshita, Fumihiko Matsui, Hiroshi Daimon, Naohisa Happo, Sinya Hosokokawa, Kenji Ohoyama, Kazuo Tsutsui, Takayoshi Yokoya, Kouichi Hayashi
- Organizer
  14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography2018
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Electrical properties of selectively grown GaN channel for FinFETs2018
- Author(s)
  Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, and Kazuo Tsutsui
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Migration制御したスパッタリング法による2次元層状MoS2成膜2018
- Author(s)
  大橋匠、坂本拓朗、松浦賢太朗、清水淳一、外山真矢人、石原聖也、日比野祐介、宗田伊理也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価2018
- Author(s)
  小川達博、名取鼓太郎、星井拓也、仲武昌史、渡辺義夫、永山勉、樋口隆弘、加藤慎一、谷村英昭、角嶋邦之、若林整、筒井一生
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique2018
- Author(s)
  Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, and Toyohiko Kinoshita
- Organizer
  18th Int. Workshop on Junction Technology (IWJT2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites2018
- Author(s)
  Toyohiko Kinoshita, Tomohiro Matsushita, Takayuki Muro, Takuo Ohkochi, Hitoshi Osawa, Kouichi Hayashi, Fumihiko Matsui, Kazuo Tsutsui, Kotaro Natori, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, 他12名
- Organizer
  14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film2018
- Author(s)
  M. Hamada, K. Matsuura, T. Sakamoto, H. Tanigawa, T. Ohashi, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  IEEE S3S Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs2018
- Author(s)
  松浦賢太朗、清水淳一、外山真矢人、大橋匠、宗田伊理也、石原聖也、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減2018
- Author(s)
  坂本拓朗、大橋匠、松賢太朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Analyses of 3D atomic arrangements of impurity atoms doped in Silicon by spectro-photoelectron holography technique2018
- Author(s)
  Kazuo Tsutsui
- Organizer
  Int. Workshop on Junction Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719
[Presentation] Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy2018
- Author(s)
  T. Sakamoto, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, Y. Suzuki, N. Ikarashi H. Wakabayashi
- Organizer
  IEEE S3S Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ堆積MoS2膜の下地材料依存性2017
- Author(s)
  大橋匠、宗田伊理也、石原聖也、日比野祐介、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの形状制御2017
- Author(s)
  黒岩宏紀、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Active dopant concentration in Si(001) with ion-implanted dopant studied by angle resolved photoelectron spectroscopy2017
- Author(s)
  Y. Higa, S.N. Takeda, T. Ebato, M. Yoneda, A. Fujinaka, K. Morita, N. Morimoto, A.K.R. Ang, H. Daimon and K. Tsutsui
- Organizer
  The 8th International symposium on surface science(ISSS-8) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Si結晶中にドープされたAsの異なる原子配列構造と深さ分布2017
- Author(s)
  小川達博、名取鼓太郎、星井拓也、仲武昌史、渡辺義夫、角嶋邦之、若林整、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性2017
- Author(s)
  外山真矢人、大橋匠、松浦賢太朗、清水淳一、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] SiにドープされたAsの光電子ホログラフィー評価と電気的活性化との関係2017
- Author(s)
  名取鼓太郎、筒井一生、松下智裕、室隆桂之、星井拓也、角嶋邦之、若林整、林好一、松井文彦、森川良忠、下村勝、木下豊彦
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] MoS2ターゲット高温スパッタ法のロングスロー化によるMoS2膜結晶性向上2017
- Author(s)
  坂本拓朗、大橋匠、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製2017
- Author(s)
  篠原健朗、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT構造におけるドット形凹凸AlGaN層形成によるコンタクト抵抗低減の検討2017
- Author(s)
  渡部拓巳、久永真之祐、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas2017
- Author(s)
  Yasunori Okada, Shimpei Yamaguchi, Takumi Ohashi,Iriya Muneta, Kuniyuki Kasushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Organizer
  The 17th International Workshop on Junction Technology 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 角度分解光電子分光を用いたサブバンド測定によるイオン打ち込み Si(001) の反転層ポテンシャル勾配及び活性ドーパント濃度の評価2017
- Author(s)
  比嘉友大、武田さくら、江波戸達哉、米田允俊、藤中秋穂、森田一帆、森本夏輝、Ang Artoni Kevin、大門寛、筒井一生
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Crystallinity Improvement using Migration Enhancement Method for Sputtered-MoS2 Film2017
- Author(s)
  Shin Hirano, Jun’ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technoogy and Manufuctureing Conference (EDTM2017)
- Place of Presentation
  富山国際会議場（富山市）
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET2017
- Author(s)
  Jun’ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi and Hitoshi Wakabayashi
- Organizer
  Electron Devices Technoogy and Manufuctureing Conference (EDTM2017)
- Place of Presentation
  富山国際会議場（富山市）
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] トンネル電極を形成したスパッタMoS2膜における電流の障壁膜厚依存性2017
- Author(s)
  早川直希、宗田伊理也、大橋匠、松浦賢太朗、清水淳一、角嶋邦之、筒井一生、若林整
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜上ALD-Al2O3膜の成長過程観察2017
- Author(s)
  谷川晴紀、大橋匠、松浦賢太朗、清水淳一、外山真矢人、早川直希、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 表面近傍の活性ドーパント濃度の熱処理依存性2017
- Author(s)
  比嘉友大、武田さくら、江波戸達也、米田允俊、藤中秋輔、森田一帆、森本夏輝、Ang Kevin、Tan Xin、大門寛、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing2017
- Author(s)
  M. Toyama, T. Ohashi, K. Matsuura, J. Shimizu, I. Muneta, K. Kakushima, K. Tsutsui, and H. Wakabayashi
- Organizer
  Advanced Metallization Conference 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography2017
- Author(s)
  Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui
- Organizer
  11th International Symposium on Atomic Level Characterizations for New Materials and Devices ’17
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果のメカニズム解明2016
- Author(s)
  武井優典、下田智裕、高橋昌靖、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] SiにドープされたAsの光電子ホログラフィーによる評価2016
- Author(s)
  名取鼓太郎、筒井一生、松下智裕、室隆桂之、木下豊彦、星井拓也、角嶋邦之、若林整、松井文彦、下村勝
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子ホログラフィーによる Si 中ドーパントサイトの研究2016
- Author(s)
  筒井　一生
- Organizer
  第10回物性科学領域横断研究会
- Place of Presentation
  神戸大学六甲第二キャンパス(兵庫県神戸市)
- Year and Date
  2016-12-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719
[Presentation] デバイス高性能化に向けたSi中ドーパントサイトの研究2016
- Author(s)
  筒井　一生
- Organizer
  物性研究所短期研究会「原子層上の活性サイトで発現する局所機能物性」
- Place of Presentation
  東京大学物性研究所(千葉県柏市）
- Year and Date
  2016-12-21
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] S/Mo比増加によるMoS2膜の低キャリア濃度化2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野祐介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] デバイス高性能化に向けたSi中ドーパントサイトの研究2016
- Author(s)
  筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  物性研究所短期研究会「原子層上の活性サイトで発現する局所機能物性」
- Place of Presentation
  東京大学物性研究所（柏市）
- Year and Date
  2016-12-20
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film2016
- Author(s)
  K. Matsuura, T. Ohashi, I. Muneta S. Ishihara, N. Sawamoto, K. Kakushima, K. Tsutsui, A. Ogura and H. Wakabayashi
- Organizer
  47th IEEE Semiconductor Interface Specialists Conference (SISC2016)
- Place of Presentation
  San Diego, USA
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子ホログラフィーによる Si 中ドーパントサイトの研究2016
- Author(s)
  筒井　一生
- Organizer
  第10回物性科学領域横断研究会
- Place of Presentation
  神戸大学六甲第二キャンパス(兵庫県神戸市)
- Year and Date
  2016-12-09
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] スパッタMoS2膜のフォーミングガス雰囲気ポストアニーリングによる電気特性向上2016
- Author(s)
  清水淳一、大橋匠、松浦賢太朗、角嶋邦之、筒井一生、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] TFT応用に向けたRFマグネトロンスパッタリング法によるMoS2膜の形成2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野裕介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会
- Place of Presentation
  キャンパス・イノベーションセンター（東京）
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] デバイス高性能化に向けたSi中ドーパントサイトの研究2016
- Author(s)
  筒井　一生
- Organizer
  物性研究所短期研究会「原子層上の活性サイトで発現する局所機能物性」
- Place of Presentation
  東京大学物性研究所(千葉県柏市)
- Year and Date
  2016-12-21
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-INTERNATIONAL-15K21719
[Presentation] 立体チャネルトランジスタ応用に向けたGaN選択成長の検討2016
- Author(s)
  黒岩宏紀、武井優典、高橋言緒、井手利英、清水三聡、筒井一生、角嶋邦之、若林整、岩井洋
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming- Gas Annealing for 3D-IC2016
- Author(s)
  J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials (SSDM2016)
- Place of Presentation
  つくば国際会議場（つくば市）
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 産業応用技術における３Ｄ活性サイトイメージング：半導体中の不純物サイト2016
- Author(s)
  筒井一生
- Organizer
  第29回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  千葉
- Year and Date
  2016-01-09
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 光電子ホログラフィーによる Si 中ドーパントサイトの研究2016
- Author(s)
  筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦
- Organizer
  第10回物性科学領域横断研究会
- Place of Presentation
  神戸大学（神戸市）
- Year and Date
  2016-12-09
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタMoS2膜のフォーミングガス雰囲気ポストアニーリングによる電気特性向上2016
- Author(s)
  清水淳一、大橋匠、松浦賢太朗、角嶋邦之、筒井一生、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 産業応用技術における３Ｄ活性サイトイメージング：半導体中の不純物サイト2016
- Author(s)
  筒井一生
- Organizer
  第29回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  柏の葉カンファレンスセンター（千葉県柏市）
- Year and Date
  2016-01-09
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果のメカニズム解明2016
- Author(s)
  武井優典、下田智裕、高橋昌靖、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] S/Mo比増加によるMoS2膜の低キャリア濃度化2016
- Author(s)
  大橋匠、松浦賢太朗、石原聖也、日比野祐介、澤本直美、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果の凹凸構造サイズ依存性2015
- Author(s)
  下田智裕、武井優典、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] 硫黄粉末アニールの減圧化によるスパッタMoS2薄膜の結晶性向上2015
- Author(s)
  松浦賢太朗、大橋匠、石原聖也、澤本直美、日比野祐介、須田耕平、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] Introduction of uneven structures under ohmic contacts to reduce contact resistances on AlGaN/GaN HEMTs2015
- Author(s)
  K. Tsutsui
- Organizer
  IEEE TENCON2015
- Place of Presentation
  Macau (China)
- Year and Date
  2015-11-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] AlGaN/GaN HEMTへの凹凸AlGaN層導入によるコンタクト抵抗低減効果の凹凸構造サイズ依存性2015
- Author(s)
  下田智裕、武井優典、筒井一生、齋藤渉、角嶋邦之、若林整、岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns2015
- Author(s)
  Yusuke Takei, Tomohiro Shimoda, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai
- Organizer
  2015 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Ohmic contacts formation on AlGaN/GaN HEMTs by introducing uneven AlGaN layer structures2015
- Author(s)
  K. Tsutsui
- Organizer
  IEEE EDS Mini-Colloquium: WIMNACT 45
- Place of Presentation
  東京工業大学（神奈川県）
- Year and Date
  2015-02-19
- Invited
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 硫黄粉末アニールの減圧化によるスパッタMoS2薄膜の結晶性向上2015
- Author(s)
  松浦賢太朗、大橋匠、石原聖也、澤本直美、日比野祐介、須田耕平、角嶋邦之、筒井一生、小椋厚志、若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Lowering contact resistances on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers: Effects of configuration and size of lateral patterns2015
- Author(s)
  Y. Takei, T. Shimoda, W. Saito, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai
- Organizer
  Material Research Society Fall Meeting
- Place of Presentation
  Boston (USA)
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] Ohmic contacts formation on AlGaN/GaN HEMTs by introducing uneven AlGaN layer structures2015
- Author(s)
  K. Tsutsui
- Organizer
  IEEE EDS Mini-Colloquium: WIMNACT 45
- Place of Presentation
  東京工業大学すずかけ台キャンパス(神奈川県横浜市）
- Year and Date
  2015-02-19
- Invited
- Data Source
  KAKENHI-ORGANIZER-26105001
[Presentation] Introduction of uneven structures under ohmic contacts to reduce contact resistances on AlGaN/GaN HEMTs2015
- Author(s)
  K. Tsutsui
- Organizer
  IEEE TENCON2015
- Place of Presentation
  Macau, China
- Year and Date
  2015-11-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Ge基板上の弗化物絶縁膜へのSrF_2層導入による電流リーク制御2011
- Author(s)
  高橋慶太, 林優士, 萱沼良介, 齊藤昇, 筒井一生
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge基板上の弗化物絶縁膜へのSrF2層導入による電流リーク制御2011
- Author(s)
  高橋慶太, 林優士, 萱沼良介, 齊藤昇, 筒井一生
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川(震災により講演会中止)
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] シリサイドバッファ層を用いたSi基板上弗化物ヘテロ構造の成長2011
- Author(s)
  萱沼良介 ,林優士, 齊藤昇, 高橋慶太, 筒井一生
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] シリサイドバッファ層を用いたSi基板上弗化物ヘテロ構造の成長2011
- Author(s)
  萱沼良介, 林優士, 齊藤昇, 高橋慶太, 筒井一生
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川(震災により講演会中止)
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge基板上での高温成長による弗化物RTDの欠陥制御2010
- Author(s)
  高橋慶太, 林優士, 萱沼良介, 齊藤昇, 筒井一生
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Epitaxial NiSi_2 Buffer Technique for Fluoride Resonant Tunneling Devices on Si2010
- Author(s)
  Keita Takahashi, Yuki Yoshizumi, Yuji Fukuoka, Noboru Saito, Kazuo Tsutsui
- Organizer
  2010 Int.Conf.on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge基板上での高温成長による弗化物RTDの欠陥制御2010
- Author(s)
  高橋慶太, 林優士, 萱沼良介, 齊藤昇, 筒井一生
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge(111)基板上への弗化物超薄膜の成長と共鳴トンネル素子への応用2010
- Author(s)
  高橋慶太, 齊藤昇, 大下隆生, 筒井一生
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市(東海大学)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs2010
- Author(s)
  P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, K. Tsutsui, H. Iwai
- Organizer
  10th Int. Workshop on Junction Technology (IWJT2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Epitaxial NiSi_2 Buffer Technique for Fluoride Resonant Tunneling Devices on Si2010
- Author(s)
  Keita Takahashi, Yuki Yoshizumi, Yuji Fukuoka, Noboru Saito, Kazuo Tsutsui
- Organizer
  2010 Int.Conf.on Solid State Devices and Materials(SSDM2010)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Si基板上の弗化物共鳴トンネル素子のためのNiSi_2二段階成長2010
- Author(s)
  齊藤昇, 吉住友樹, 福岡佑二, 高橋慶太, 筒井一生
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市(東海大学)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer2010
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  China Semiconductor Technology International Conference(CSTIC)
- Place of Presentation
  上海、中国
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunneling Diodes2010
- Author(s)
  Keita Takahashi, Takao Oshita, Kazuo Tsutsui
- Organizer
  52nd Electronic Materials Conference (EMC2010)
- Place of Presentation
  Notre Dame, USA.
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] NiSi_2バッファ層を用いたSi基板上弗化物ヘテロ構造の成長2010
- Author(s)
  齊藤昇, 吉住友樹, 福岡佑二, 萱沼良介, 林優士, 高橋慶太, 筒井一生
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge(111)基板上への弗化物超薄膜の成長と共鳴トンネル素子への応用2010
- Author(s)
  高橋慶太, 齊藤昇, 大下隆生, 筒井一生
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Si基板上の弗化物共鳴トンネル素子のためのNiSi_2二段階成長2010
- Author(s)
  齊藤昇, 吉住友樹, 福岡佑二, 高橋慶太, 筒井一生
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御2010
- Author(s)
  茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge (111) and Its Application to Resonant Tunneling Diodes2010
- Author(s)
  Keita Takahashi, Takao Oshita, Kazuo Tsutsui
- Organizer
  52nd Electronic Materials Conference (EMC 2010)
- Place of Presentation
  Notre Dame, Indiana, USA
- Year and Date
  2010-06-24
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] NiSi_2バッファ層を用いたSi基板上弗化物ヘテロ構造の成長2010
- Author(s)
  齊藤昇, 吉住友樹, 福岡佑二, 萱沼良介, 林優士, 高橋慶太, 筒井一生
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs2009
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] NiSi_2バッファ層を用いたSi基板上の弗化物ヘテロ構造の成長2009
- Author(s)
  吉住友樹, 齊藤昇, 大下隆生, 筒井一生
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge(111)基板上への弗化物超薄膜エピタキシャル成長2009
- Author(s)
  高橋慶太, 大下隆生, 筒井一生
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  茨城
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] FinFETの構造ばらつきによるオン電流のばらつきの検討2009
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Ge(lll)基板上への弗化物超薄膜エピタキシヤル成長2009
- Author(s)
  高橋慶太, 大下隆生, 筒井一生
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市(筑波大学)
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire2009
- Author(s)
 H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
 216^<th> Electrochemical Society Meeting
- Place of Presentation
 Vienna, Austria
- Year and Date
 2009-10-09
- Data Source
 KAKENHI-PROJECT-18063009
[Presentation] Ge(111)基板上への弗化物超薄膜エピタキシャル成長と共鳴トンネルダイオード試作2009
- Author(s)
  高橋慶太, 齊藤昇, 大下隆生, 筒井一生
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市(富山大学)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Ge(111)基板上への弗化物超薄膜エピタキシャル成長と共鳴トンネルダイオード試作2009
- Author(s)
  高橋慶太, 齊藤昇, 大下隆生, 筒井一生
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] NiSi_2バッファ層を用いたSi基板上の弗化物ヘテロ構造の成長2009
- Author(s)
  吉住友樹, 齊藤昇, 大下隆生, 筒井一生
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市(富山大学)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化2009
- Author(s)
  茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用2009
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II2009
- Author(s)
  小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] エピタキシャルNiSi_2バッファ層を用いたSi基板上への弗化物ヘテロ構造の成長2009
- Author(s)
  吉住友樹, 横手善智, 大下隆生, 筒井一生
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  茨城
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Short-channel effects on FinFETs induced by inappropriate fin widths2009
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.Ramgopal Rao, K.Tsutsui, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] NiSi2バッファ層を用いたSi基板上弗化物共鳴トンネルダイオードの検討2008
- Author(s)
  横手義智, 高橋慶太, 吉住友樹, 大下隆生, 筒井一生
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井市(中部大学)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Analysis of Threshold Voltage Variations of FinFETs: Separation of Short Channel Effects and Space Charge Effects2008
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Ibaraki, Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用2008
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] NiSi_2バッファ層を用いたSi基板上弗化物共鳴トンネルダイオードの検討2008
- Author(s)
  横手義智, 高橋慶太, 吉住友樹, 大下隆生, 筒井一生
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers2008
- Author(s)
  Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
- Organizer
  7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETにおけるショートチャネル効果のフィン幅依存性2008
- Author(s)
  小林勇介, 角嶋邦之, パールハットアヘメト, ラムゴパルラオ, 筒井一生, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Ge(111)基板上弗化物共鳴トンネルダイオードの製作2008
- Author(s)
  高橋慶太, 横手義智, 大下隆生, 筒井一生
- Organizer
  第69回応用物理学会学術講演会3p-ZQ-14
- Place of Presentation
  愛知
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い2008
- Author(s)
  アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, Angada B. Sachidc, K. Tsutsui, K. Kakushima, P. Ahmet, V. Ramgopal Rao and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Growth of Fluoride Quantum Well Heterostructures for Resonant Tunneling Devices on Si Substrates2008
- Author(s)
  Kazuo Tsutsui, Talao Oshita, So Watanabe, Motoki Maeda
- Organizer
  213th ECS Meeting
- Place of Presentation
  Phoenix, USA.(Invited)
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, A.B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Growth of ultra thin fluoride heterostructures on Ge (111) for quantum devices2008
- Author(s)
  Takao Oshita, Keita Takahashi, Kazuo Tsutsui
- Organizer
  15th Int.Conf.on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada.
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, K uniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silicide on N^+-Si by Direct Deposition of Group III Element (A1,B) Thin Film at Ni/Si Interface2008
- Author(s)
  K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, and H. Iwai
- Organizer
  Materials for Advanced Metalization (MAM2008)
- Place of Presentation
  Dresden, Germany
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Ge(lll)基板上弗化物共鳴トンネルダイオードの製作2008
- Author(s)
  高橋慶太, 横手義智, 大下隆生, 筒井一生
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井市(中部大学)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-20360004
[Presentation] FinFETの閾値変動における短チャネル効果による影響の切り分け2008
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Organizer
  211th ECS Meeting
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahment, K. Kakushima and H. Iwai
- Organizer
  212th ECS Meeting
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討2007
- Author(s)
  小林勇介, 角嶋邦之, Ahmet P., Rao V.R., 筒井一生, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性2007
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 金属ゲート電極材料のAlGaN/GaN HEMT のリーク電流への影響
- Author(s)
  大賀一樹、川那子高暢、角嶋邦之、片岡好則、西山彰、杉井信之、若林整、筒井一生、名取研二、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 高温スパッタリング法によるMoS2膜の形成と電気特性
- Author(s)
  松浦賢太朗，大橋匠，山口晋平，須田耕平，石原聖也，澤本直美，角嶋邦之，杉井信之，西山彰，片岡好則，名取研二，筒井一生，岩井洋，小椋厚志，若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT構造への凹凸AlGaN層導入によるコンタクト抵抗の低減
- Author(s)
  武井優典、下田智裕、筒井一生、齋藤渉、角嶋邦之、若林整、片岡好則、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 硬Ｘ線光電子分光を用いた金属/AlGaN/GaN のバンド構造の解析
- Author(s)
  大賀一樹，陳江寧，川那子高暢，角嶋邦之，野平博司，片岡好則，西山彰，杉井信之，若林整，筒井一生，名取研二，岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN HEMT 構造のAlGaN層内部の電子トラップ解析
- Author(s)
  馬場俊之、永久雄一、川那子高暢、角嶋邦之、片岡好則、西山彰、杉井信之、若林整、筒井一生、名取研二、岩井洋
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] AlGaN/GaN系2次元電子ガスへのノンアロイコンタクトにおけるコンタクト抵抗のAlGaN層厚依存性による抵抗成分分析
- Author(s)
  武井優典，岡本真里，シンマン，萱沼玲，下田智裕，三井陽平，齋藤渉，筒井一生，角嶋邦之，若林整，片岡好則，岩井洋
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] スパッタ堆積MoS2膜の下地平坦化による電気特性向上
- Author(s)
  大橋匠、山口晋平、松浦賢太朗、須田耕平、石原聖也、澤本直美、角嶋邦之、杉井信之、西山彰、片岡好則、名取研二、筒井一生、岩井洋、小椋厚志、若林整
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure
- Author(s)
  M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito
- Organizer
  IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2014)
- Place of Presentation
  Knoxville, Tennessee, USA
- Year and Date
  2014-10-13 – 2014-10-15
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 大面積MoS2膜形成に向けたMoの硫化プロセスの検討
- Author(s)
  松浦賢太朗、大橋匠、山口晋平、須田耕平、石原聖也、澤本直美、角嶋邦之、杉井信之、西山彰、片岡好則、名取研二、筒井一生、岩井洋、小椋厚志、若林整
- Organizer
  第62回応用物理学会春期学術講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] 高温スパッタリング法におけるMoS2薄膜化と電気特性
- Author(s)
  大橋匠，山口晋平，松浦賢太朗，須田耕平，石原聖也，澤本直美，角嶋邦之，杉井信之，西山彰，片岡好則，名取研二，筒井一生，岩井洋，小椋厚志，若林整
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers
- Author(s)
  Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, and Hiroshi Iwai
- Organizer
  The International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PLANNED-26105014
[Presentation] Multi-Layered MoS2 Thin Film Formed by High- Temperature Sputtering for Enhancement-Mode nMOSFETs
- Author(s)
  T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura and H. Wakabayashi
- Organizer
  Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  つくば国際会議場（茨城県）
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PLANNED-26105014

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63. 中島陽一

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64. 中辻知

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Tsutsui Kazuo 筒井 一生

TSUTSUI Kazuo 筒井 一生

筒井 一生 ツツイ カズオ

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GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structuresPrincipal Investigator

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GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area GrowthPrincipal Investigator

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Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devicesPrincipal Investigator

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Fabrication of fluoride resonant tunneling devices on Si with stable electrical properties by using surface inactive layersPrincipal Investigator

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Study of Fluoride Ultra-thin Hetero Structure Devices with Complete Lattice Matched StructuresPrincipal Investigator

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Band Engineering on Alloy of Fluorides for HeterodevicesPrincipal Investigator

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電子線位置制御による高密度極微電極島の自然形成Principal Investigator

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Tsutsui Kazuo 筒井一生

TSUTSUI Kazuo 筒井一生

筒井一生ツツイカズオ