Hattori Takeo 服部健雄

… Alternative Names

HATTORI Takeo 服部健雄

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Researcher Number	10061516
External Links
Affiliation (Current)	2025: 東京都市大学, その他部局等, 名誉教授
Affiliation (based on the past Project Information) *help	2008 – 2009: 東京工業大学, フロンティア研究センター, 客員教授 2007 – 2009: Tohoku University, 未来科学技術共同研究センター, 教授 2004 – 2007: 武蔵工業大学, 名誉教授 2006: 東北大学, 未来科学技術協同研究センター, 教授 2004 – 2005: 武蔵工業大学, 工学部, 名誉教授 1987 – 2003: 武蔵工業大学, 工学部, 教授
Review Section/Research Field	Principal Investigator 表面界面物性 / Applied materials / Thin film/Surface and interfacial physical properties / Science and Engineering Except Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator シリコン酸化膜 / 光電子分光法 / interface structure / 酸化反応 / 界面構造 / 自然酸化膜 / XPS / シリコン界面 / 原子スケール / oxidation reaction … More / 酸化機構 / Si-SiO_2 / silicon oxide / 価電子帯 / 酸化膜の層状成長 / atomic-scale / oxidation mechanism / silicon / Hydrogen termination / 界面反応 / 層状成長 / 初期酸化 / シリコン / 水素終端 / 酸化速度 / SiO_2 / 界面 / 希土類酸化膜 / 最大エントロピー法 / 希土類金属酸化膜 / 高誘電率膜 / ゲート絶縁膜 / 電子帯構造 / 角度分解光電子分光法 / 放射光 / 熱酸化膜 / シリコン酸化膜@シリコン界面 / Thermal oxide / Native oxide / Si interface / Rotating anode / Zr Mzeta / Soft X-ray Photoelectron Spectroscopy / Photoelectron Spectroscopy / 洗浄過程 / Si_2p光電子スペクトル / 非破壊分析 / 超軟X線 / 回転タ-ゲット / ZrMζ線 / 軟X線励起光電子分光法 / Dielectric constant / Maximum entropy concept / Rare oxide film / High dielectric constant film / gate insulators / Angle-resolved photoelectron spectroscopy / photoelectron spectroscopy / Synchrotron radiation / 硬X線 / 高エネルギー光電子分光法 / 誘電率 / elastic scattering / first principle molecular orbital calculation / interface dipole / interface states / surface roughness / 光電子回折 / 非弾性散乱 / ダイポール相互作用 / 価電子帯オフセット / 活性酸素原子 / 弾性散乱 / 第一原理分子軌道計算 / 界面原子構造 / 界面ダイポール / 界面準位 / 表面粗さ / valence band discontinuity / valence band / layr-by-layr oxidation of silicon / 価電子帯の不連続量 / Si-SiO2 / initial stage of oxidation / preoxide / native oxide / プレオキサイド / interface reaction / layr by layr growth / initial oxidation / 局所的酸化 / 界面形成過程 / 初期酸化過程 / 平坦性 / 酸化膜界面 / 金属 / ZrKζ線 / MgKα線 / サブオキサイド / エッチング速度 / ストレス緩和速度 / ステップ / Si2p光電子スペクトル / 界面の平坦性 / Si界面 / 光吸収係数 / 光学定数 / 反射スペクトル / 真空紫外域 / シリコン窒化膜 / シリコン酸窒化膜の界面粗さ / シリコン酸窒化膜の表面粗さ / Si界面構造 / 電子状態から決まる界面 / 価電子に対するエネルギー障壁 / 電子状態の沁み出し / 0 1s光電子のエネルギー損失 / X線光電子分光分析装置 / 電子エネルギー損失 / 組成遷移層 / 深さ方向分析 / シリコン熱酸化膜 / シリコン酸窒化膜 / シンクロトロン軌道放射光 / 単色化X線励起光電子分光法 / シリコンーシリコン結合 / シリコン酸化膜の光吸収 / 真空紫外域反射測定法 / 全外全反射吸収測定法 / シリコンー水素結合 / シリコンの初期酸化 / シリコン自然酸化膜 / シリコン表面の清浄化 / 赤外全反射吸収測定法 / 角度分解X線光電子分光法 / X線光電子分光法 … More Except Principal Investigator MOSFET / HfO_2 / SiO_2 / LSI / SiGe / 光電子分光 / x-ray photoelectron spectroscopy / defects / dielectric constant / gate oxide / 欠陥 / 高誘電率 / ゲート絶縁膜 / ferroelectric / field effect transistor / quantum chemistry calculation / low contact resistance / high aspect ratio / point defect relaxation process / ultra thin Si oxide / 無損傷化 / 欠陥緩和 / ヘテロ界面 / 欠損測定 / Siプロセス量子化学研究 / 高アスペクト比プロセス / 低抵抗コンタクト / 極薄酸化膜 / Ge歪超格子 / Si / Si高精度化プロセス / 強誘電体 / 電界効果型トランジスタ / 量子化学計算 / 低抵抗コンタクト抵抗 / 高アスペクト比 / 点欠陥緩和過程 / 極薄Si酸化膜 / 第一原理計算 / 薄膜 / 表面 / 酸化膜 / シリコン / 誘電率 / 界面 / Niシリサイド / 短チャネル効果 / エネルギー障壁 / drain / Schottky source / しきい値 / 三次元構造MOSFET / 数値解析 / ショットキー接合 / 3次元 / オン電流 / ショットキー / 特性ばらつき / ロバストネス / 3次元構造 / トランジスタ / 感度解析 / シリサイド / FinFET / ダブルゲート / CMOS / ゆらぎ / ばらつき Less

Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial AnalysesPrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Robustness of Three-Dimensional MOSFETs
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Study on dielectric constant of ultrathin films in gate structures
- Principal Investigator
  
  HIROSE Kazuyuki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace Exploration Agency
Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon InterfacePrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Musashi Institute of Technology
XPS Study of electrical defects in thin HfAlOx films formed on Si substrates
- Principal Investigator
  
  HIROSE Kazuyuki
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace Exploration Agency
断面光電子分光法による非晶質シリコン酸化膜の組成および結合状態密度の深さ方向分析Principal Investigator
- Principal Investigator
  
  服部健雄
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Musashi Institute of Technology
Studies on Carrier Trap Levels at Ultrathin SiO_2/Si Interface and Its Relation with Microscopic StructuresPrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
Development of Ultra-smooth Si Surface by the Control of SiO_2/Si Interface Formation on an Atomic-ScalePrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
Ultimate Materials and Processes for Integrated Intelligent System
- Principal Investigator
  
  HORIIKE Yasuhiro
- Project Period (FY)
  1995 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
  Toyo University
Formation of Extremely Flat Silicon Oxide/Silicon Interface by the Thermal Oxidation of Hydrogen-Terminated Silicon SurfacePrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide FilmPrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Musashi Institute of Technology
その場観察用X線光電子分光分析器の開発とシリコン酸化・窒化極薄膜の形成機構の解明Principal Investigator
- Principal Investigator
  
  服部健雄
- Project Period (FY)
  1989 – 1991
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Research Institution
  Musashi Institute of Technology
超ULSIのための高品質SiO_2極薄膜の作成とSiO_2/Si界面の極微細構造評価Principal Investigator
- Principal Investigator
  
  服部健雄
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Musashi Institute of Technology
Investigation on Improvement in the Ultrasoft X-ray Excited Photoelectron SpectroscopyPrincipal Investigator
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  Applied materials
- Research Institution
  Musashi Institute of Technology

All 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation

[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010
- Author(s)
  T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics Letters Vol. 96, No. 10
- NAID
  110008106358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Si-SiO_2系の形成・構造・物性」、表面科学 (日本表面科学会)2010
- Author(s)
  服部健雄, 廣瀬和之
- Journal Title
  
  (社)日本表面科学会創立30周年記念特集号分野別記念解説 Vol. 31, No. 1
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans Vol.16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film2009
- Author(s)
  K. Kakushima, K. Tachi, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Journal of Applied Physics Vol. 106, No. 12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
- Journal Title
  
  ECS Transactions 16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] 巻頭言、LSIにかかわる技術の変遷と課題2009
- Author(s)
  服部健雄
- Journal Title
  
  応用物理学会誌 Vol. 78, No. 9
  
  Pages: 841-841
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Band bending measurement of HfO_2/SiO_2/Si capacitor with ultra-thin La_2O_3 insertion by XPS2008
- Author(s)
  K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Applied Surface Science Vol. 254
  
  Pages: 6106-6108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2008
- Author(s)
  K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Journal Title
  
  Journal of Physics : Conference Series Vol. 100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals2008
- Author(s)
  T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Obser-vation of band bending of metal/high-k Si capacitor with high energy x-ray photo-electron spectroscopy and its application to interface dipole measurement2008
- Author(s)
  K. Kakushima, K. Okamoto, K. Tachi, J. Song, T. Kawanago, K. Tsutsui, N. Sugii, P. Ahmet, T. Hattori, H. Iwai
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy2008
- Author(s)
  M. Murugesan, J. C. Bea, C.-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Evaluation of Si_3N_4/Si Interface by UV Raman Spectrsocopy2008
- Author(s)
  A. Ogura, T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Surface Science Vol. 254
  
  Pages: 6229-6231
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Activated boron and its concen-tration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements2008
- Author(s)
  K. Tsutsui, T. Matsuda, M. Watanabe, C-G Jin, Y. Sasaki, B. Mizuno, E. Ikenaga, K. Kakushima, P. Alhmet, T. Maruizumi, H. Nohira, T. Hattori, H. Iwai
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Photoelectron Spectros-copy Studies of SiO_2/Si Interfaces2007
- Author(s)
  K. Hirose, H. Nohira, K. Azuma, T. Hattori
- Journal Title
  
  Progress in Surface Science Vol. 82
  
  Pages: 3-54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Angle-resolved photoelectron spectroscopy on gate insulators2007
- Author(s)
  T. Hattori
- Journal Title
  
  Microelectronics Reliability Vol. 47
  
  Pages: 20-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Electrical Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si (110) and Si (100) Surfaces2007
- Author(s)
  M. Higuchi, T. Aratani, T. Hamada, S. Shinagawa, H. Nohira, E. Ikenaga, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 4B
  
  Pages: 1895-1898
- NAID
  10022545462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen-hydrogen radicals2007
- Author(s)
  M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Maruizumi, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics Letters Vol. 90, No. 12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Angle-resolved photoelectron spectroscopy on gate insulators2007
- Author(s)
  T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi
- Journal Title
  
  Microelectronics Reliability Vol. 47
  
  Pages: 20-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] マイクロ波励起プラズマを用いた高品質シリコン窒化膜の形成2007
- Author(s)
  寺本章伸, 荒谷崇, 樋口正顕, 池永英司, 平山昌樹, 須川成利, 服部健雄, 大見忠弘
- Journal Title
  
  真空 (日本真空協会) Vol. 50, No. 11
  
  Pages: 659-664
- NAID
  10020009820
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Mgle-resolved photoelectron spectroscopy on gate insulators2007
- Author(s)
  服部健雄
- Journal Title
  
  Microelectronics Reliability 47
  
  Pages: 20-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] ラジカル窒化シリコン酸窒化膜における窒素プロファイルのX線光電子分光分析による評価2007
- Author(s)
  河瀬和雅, 梅田浩司, 井上真雄, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
- Journal Title
  
  真空 (日本真空協会) Vol. 50, No. 11
  
  Pages: 672-677
- NAID
  10020009875
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-82006
- Author(s)
  T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, et al.
- Journal Title
  
  International Journal of High Speed Electronics and Systems (to be published in)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006
- Author(s)
  K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
- Journal Title
  
  IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
  
  Pages: 368-371
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006
- Author(s)
  鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No.82-2
  
  Pages: 55-60
- NAID
  110004757013
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] X-ray photoelectron spectroscopy study of dielectric constants for Si compounds2006
- Author(s)
  K. Hirose, M. Kihara, D. Kobayashi, H. Okamoto, S. Shinagawa, H. Nohira, E. Ikenaga, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics letters Vol. 89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at SPring-82006
- Author(s)
  T.Hattori et al.
- Journal Title
  
  International Journal of High Speed Electronics and Systems (to be published)
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Valence charges for ultrathin SiO_2 film formed on Si(100)2006
- Author(s)
  K.Hirose, M.Kihara, H.Okamoto, H.Nohira, E.Ikenaga, Y.Takata, K.Kobayashi, T.Hattori
- Journal Title
  
  Journal de Physique IV 132
  
  Pages: 83-86
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006
- Author(s)
  K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Journal Title
  
  2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device-Science and Technology-
  
  Pages: 25-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy2005
- Author(s)
  Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg et al.
- Journal Title
  
  Journal of Electron Spectroscopy and Related Phenomena 144-147
  
  Pages: 1063-1065
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Angle-resolved XPS studies on transition layers at SiO_2/Si interfaces2005
- Author(s)
  T.Hattori et al.
- Journal Title
  
  J.Electron Spectroscopy & Related Phenomena 144-147
  
  Pages: 457-460
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Angle-resolved XPS studies on transition layers at SiO_2/Si interfaces.2005
- Author(s)
  T.Hattori
- Journal Title
  
  J.Electron Spectroscopy and Related Phenomena 144-147
  
  Pages: 457-460
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Angle-resolved XPS studies on transition layers at SiO_2/Si interfaces2005
- Author(s)
  T.Hattori
- Journal Title
  
  J. Electron Spectroscopy and Related Phenomena 144-147
  
  Pages: 457-460
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-82005
- Author(s)
  Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, E.Ikenaga, K.Horiba, S.Shin, M.Arita, K.Shimada, H.Namatame, M.Taniguchi, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, K.Kobayashi
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research A 547
  
  Pages: 50-55
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy2005
- Author(s)
  Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, M.Taniguchi, S.Shin, T.Ishikawa, K.Kobayashi
- Journal Title
  
  Journal of Electron Spectroscopy and Related Phenomena 144-147
  
  Pages: 1063-1065
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Thermal Stability of LaO_x/Si Interfacial Transition Layer2005
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, K.Kobayashi, Y.Takata, T.Hattori
- Journal Title
  
  ECS Transactions 1
  
  Pages: 87-95
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation2005
- Author(s)
  Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, S.Shin, H.Nohira, T.Hattori
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 585-588
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Determination of electron escape depth in ultrathin silicon oxide2005
- Author(s)
  H.Nohira, H.Okamoto, K.Azuma, Y.Nakata, E.Ikenaga, K.Kobayashi, Y.Takata, S.Shin, T.Hattori
- Journal Title
  
  Applied Physics Letters 86・8
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process.2004
- Author(s)
  T.Hattori
- Journal Title
  
  Applied Surface Science 234-1/4
  
  Pages: 197-201
- NAID
  10011880703
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori et al.
- Journal Title
  
  Microelectronic Engineering 71(1-4)
  
  Pages: 283-287
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, et al.
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004
- Author(s)
  T.Hattori
- Journal Title
  
  Applied Surface Science 234・1-4
  
  Pages: 197-201
- NAID
  10011880703
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, T.Hattori
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] X-ray photoelectron spectroscopy study on SiO_2/Si interface structures formed by three kinds of atomic oxygen at 300℃2004
- Author(s)
  M.Shioji, T.Shiraishi, K.Takahashi, H.Nohira, K.Azuma, Y.Nakata, Y.Takata, S.Shin, K.Kobayashi, T.Hattori
- Journal Title
  
  Applied Physics Letters 84・19
  
  Pages: 3756-3758
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004
- Author(s)
  T.Hattori, K.Azuma, Y.Nakata, M.Shioji, T.Shiraishi, T.Yoshida, K.Takahashi, H.Nohira, Y.Takata, S.Shin, K.Kobayashi
- Journal Title
  
  Applied Surface Science 234・1〜4
  
  Pages: 197-201
- NAID
  10011880703
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004
- Author(s)
  T.Hattori et al.
- Journal Title
  
  Applied Surface Science 234(1-4)
  
  Pages: 197-201
- NAID
  10011880703
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Chemical and electronic structure of SiO_2/Si interfacial transition layer.2003
- Author(s)
  T.Hattori
- Journal Title
  
  Applied Surface Science 212/213
  
  Pages: 547-555
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry2003
- Author(s)
  Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, S.Oda
- Journal Title
  
  Journal of Applied Physics 42
  
  Pages: 1957-1961
- NAID
  80015977591
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Chemical and electronic structure of SiO_2/Si interfacial transition layer2003
- Author(s)
  T.Hattori
- Journal Title
  
  Applied Surface Science 212-213
  
  Pages: 547-555
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560025
[Journal Article] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems2003
- Author(s)
  K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, S.Shin, K.Tamasaku, D.Miwa, T.Ishikawa, H.Nohira, T.Hattori, Y.Sugita, O.Nakatsuka, A.Sakai, S.Zaima
- Journal Title
  
  Applied Physics Letters 83
  
  Pages: 1005-1007
- NAID
  120002338858
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Chemical and electronic structures of Lu2O3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, T.Hattori
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry2003
- Author(s)
  Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, et al.
- Journal Title
  
  Journal of Applied Physics 42
  
  Pages: 1957-1961
- NAID
  80015977591
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-8
- Author(s)
  T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, Y.Sugita, E.Ikenaga, K.Kobayashi, Y.Takata, H.Kondo, S.Zaima
- Journal Title
  
  Int.J.High Speed Electronics and Systems (to be publised)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Presentation] 原子スケールで平坦なSiO_2/Si界面極近傍における歪評価2010
- Author(s)
  服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之, 廣沢一郎
- Organizer
  応用物理学会、19p-P13-13
- Place of Presentation
  東海大学
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer2010
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  China Semiconductor Technology International Conference(CSTIC)
- Place of Presentation
  上海、中国
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御2010
- Author(s)
  茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs2009
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire2009
- Author(s)
  H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  216^<th> Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化2009
- Author(s)
  茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelec-tron Spectroscopy2009
- Author(s)
  S. Zaima, T. Hattori
- Organizer
  International Work-shop for New Opportunities in Hard X-ray Photoelectron Spectroscopy : HAXPES 2009
- Place of Presentation
  Long Island, NY, USA
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用2009
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II2009
- Author(s)
  小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] UVラマン分光法によるSiO_2/Si界面の評価2009
- Author(s)
  服部真季, 吉田哲也, 小瀬村大亮, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
- Organizer
  応用物理学会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009
- Author(s)
  T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] UV-Raman Spectroscopy Study on SiO_2/Si Interface2009
- Author(s)
  M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi
- Organizer
  Symposium on Dielectric and Semiconductor Materials、Devices、and Processing、215th ECS Meeting
- Place of Presentation
  San Francisco
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsu i, N. Sugii, A. N. Chandorkar, T. Hattori, and H. Iwai
- Organizer
  Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用2008
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers2008
- Author(s)
  Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
- Organizer
  7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い2008
- Author(s)
  アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Evaluation of Si_3N_4/Si Interface by UV Raman Spectroscopy2007
- Author(s)
  T. Yoshida, K. Yamasaki, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
- Organizer
  Fifth International symposium on Control of Semiconductor Interfaces, OA2-5
- Place of Presentation
  Hachioji, Tokyo
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性2007
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Al酸化物・窒化物における相対ケミカルシフトと誘電率の関係の検証2006
- Author(s)
  鈴木治彦、松田徹、野平博司、高田恭考、池永英司、小林大輔、小林啓介、服部健雄、廣瀬和之
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  草津
- Year and Date
  2006-08-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006
- Author(s)
  K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Organizer
  2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device -Science and Technology-
- Place of Presentation
  Kawasaki
- Year and Date
  2006-11-08
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006
- Author(s)
  K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
- Organizer
  IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai
- Year and Date
  2006-10-25
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006
- Author(s)
  鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
- Organizer
  応用物理学会分科会シリコンテクノロジー研究会
- Place of Presentation
  広島
- Year and Date
  2006-06-22
- Data Source
  KAKENHI-PROJECT-18360026

1. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 9 results

# of Collaborated Products: 34 results
2. HIROSE Kazuyuki (00280553)

# of Collaborated Projects: 3 results

# of Collaborated Products: 9 results
3. MORIKI Kazunori (60166395)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. IWAI Hiroshi (40313358)

# of Collaborated Projects: 2 results

# of Collaborated Products: 22 results
5. KOBAYASHI Daisuke (90415894)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
6. TAKAHASHI Kohro (10124596)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. AKIYA Masahiro (60231833)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
9. KAKUSHIMA Kuniyuki (50401568)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
10. PARHAT Ahmet (00418675)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
11. KIMURA Kenji (50127073)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. NAKAJIMA Kaoru (80293885)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. TERAMOTO Akinobu (80359554)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
14. SUWA Tomoyuki (70431541)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
15. KINOSHITA Toyohiko (60202040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
16. HORIIKE Yasuhiro (20209274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. YASUDA Yukio (60126951)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. TACHIBANA Aketomo (40135463)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. FUYUKI Takashi (10165459)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. OHMI Shun-ichiro (30282859)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
22. KOBAYASHI Keisuke (50372149)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
23. TAKATA Yasutaka (90261122)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
24. 鶴島稔夫 (10236953)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 松波弘之 (50026035)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. ITO Akio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Hattori Takeo 服部 健雄

HATTORI Takeo 服部 健雄

Research Projects

Research Products

Co-Researchers

Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial AnalysesPrincipal Investigator

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Robustness of Three-Dimensional MOSFETs

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Study on dielectric constant of ultrathin films in gate structures

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Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon InterfacePrincipal Investigator

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XPS Study of electrical defects in thin HfAlOx films formed on Si substrates

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断面光電子分光法による非晶質シリコン酸化膜の組成および結合状態密度の深さ方向分析Principal Investigator

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Studies on Carrier Trap Levels at Ultrathin SiO_2/Si Interface and Its Relation with Microscopic StructuresPrincipal Investigator

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Development of Ultra-smooth Si Surface by the Control of SiO_2/Si Interface Formation on an Atomic-ScalePrincipal Investigator

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Ultimate Materials and Processes for Integrated Intelligent System

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Formation of Extremely Flat Silicon Oxide/Silicon Interface by the Thermal Oxidation of Hydrogen-Terminated Silicon SurfacePrincipal Investigator

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Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide FilmPrincipal Investigator

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その場観察用X線光電子分光分析器の開発とシリコン酸化・窒化極薄膜の形成機構の解明Principal Investigator

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超ULSIのための高品質SiO_2極薄膜の作成とSiO_2/Si界面の極微細構造評価Principal Investigator

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Hattori Takeo 服部健雄

HATTORI Takeo 服部健雄