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Hattori Takeo  服部 健雄

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HATTORI Takeo  服部 健雄

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Researcher Number 10061516
External Links
Affiliation (Current) 2022: 東京都市大学, その他部局等, 名誉教授
Affiliation (based on the past Project Information) *help 2008 – 2009: 東京工業大学, フロンティア研究センター, 客員教授
2007 – 2009: Tohoku University, 未来科学技術共同研究センター, 教授
2004 – 2007: 武蔵工業大学, 名誉教授
2006: 東北大学, 未来科学技術 協同研究センター, 教授
2004 – 2005: 武蔵工業大学, 工学部, 名誉教授
1987 – 2003: 武蔵工業大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Applied materials / 表面界面物性 / Thin film/Surface and interfacial physical properties / Science and Engineering
Except Principal Investigator
Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords
Principal Investigator
シリコン酸化膜 / 光電子分光法 / シリコン界面 / XPS / 自然酸化膜 / 界面構造 / 酸化反応 / interface structure / 酸化機構 / oxidation reaction … More / 原子スケール / シリコン酸化膜@シリコン界面 / 熱酸化膜 / 放射光 / 角度分解光電子分光法 / 電子帯構造 / ゲート絶縁膜 / 高誘電率膜 / 希土類金属酸化膜 / 最大エントロピー法 / 希土類酸化膜 / 界面 / SiO_2 / 酸化速度 / 水素終端 / シリコン / 初期酸化 / 層状成長 / 界面反応 / Hydrogen termination / silicon / oxidation mechanism / atomic-scale / 酸化膜の層状成長 / 価電子帯 / silicon oxide / Si-SiO_2 / X線光電子分光法 / 角度分解X線光電子分光法 / 赤外全反射吸収測定法 / シリコン表面の清浄化 / シリコン自然酸化膜 / シリコンの初期酸化 / シリコンー水素結合 / 全外全反射吸収測定法 / 真空紫外域反射測定法 / シリコン酸化膜の光吸収 / シリコンーシリコン結合 / 単色化X線励起光電子分光法 / シンクロトロン軌道放射光 / シリコン酸窒化膜 / シリコン熱酸化膜 / 深さ方向分析 / 組成遷移層 / 電子エネルギー損失 / X線光電子分光分析装置 / 0 1s光電子のエネルギー損失 / 電子状態の沁み出し / 価電子に対するエネルギー障壁 / 電子状態から決まる界面 / Si界面構造 / シリコン酸窒化膜の表面粗さ / シリコン酸窒化膜の界面粗さ / シリコン窒化膜 / 真空紫外域 / 反射スペクトル / 光学定数 / 光吸収係数 / Si界面 / 界面の平坦性 / Si2p光電子スペクトル / ステップ / ストレス緩和速度 / エッチング速度 / サブオキサイド / MgKα線 / ZrKζ線 / 金属 / 酸化膜界面 / 平坦性 / 初期酸化過程 / 界面形成過程 / 局所的酸化 / initial oxidation / layr by layr growth / interface reaction / プレオキサイド / native oxide / preoxide / initial stage of oxidation / Si-SiO2 / 価電子帯の不連続量 / layr-by-layr oxidation of silicon / valence band / valence band discontinuity / 表面粗さ / 界面準位 / 界面ダイポール / 界面原子構造 / 第一原理分子軌道計算 / 弾性散乱 / 活性酸素原子 / 価電子帯オフセット / ダイポール相互作用 / 非弾性散乱 / 光電子回折 / surface roughness / interface states / interface dipole / first principle molecular orbital calculation / elastic scattering / 誘電率 / 高エネルギー光電子分光法 / 硬X線 / Synchrotron radiation / photoelectron spectroscopy / Angle-resolved photoelectron spectroscopy / gate insulators / High dielectric constant film / Rare oxide film / Maximum entropy concept / Dielectric constant / 軟X線励起光電子分光法 / ZrMζ線 / 回転タ-ゲット / 超軟X線 / 非破壊分析 / Si_2p光電子スペクトル / 洗浄過程 / Photoelectron Spectroscopy / Soft X-ray Photoelectron Spectroscopy / Zr Mzeta / Rotating anode / Si interface / Native oxide / Thermal oxide … More
Except Principal Investigator
MOSFET / 光電子分光 / SiGe / LSI / SiO_2 / HfO_2 / ばらつき / ゆらぎ / CMOS / ダブルゲート / FinFET / シリサイド / 感度解析 / トランジスタ / 3次元構造 / ロバストネス / 特性ばらつき / ショットキー / オン電流 / 3次元 / ショットキー接合 / 数値解析 / 三次元構造MOSFET / しきい値 / Schottky source / drain / エネルギー障壁 / 短チャネル効果 / Niシリサイド / 界面 / 誘電率 / シリコン / 酸化膜 / 表面 / 薄膜 / 第一原理計算 / 極薄Si酸化膜 / 点欠陥緩和過程 / 高アスペクト比 / 低抵抗コンタクト抵抗 / 量子化学計算 / 電界効果型トランジスタ / 強誘電体 / Si高精度化プロセス / Si / Ge歪超格子 / 極薄酸化膜 / 低抵抗コンタクト / 高アスペクト比プロセス / Siプロセス量子化学研究 / 欠損測定 / ヘテロ界面 / 欠陥緩和 / 無損傷化 / ultra thin Si oxide / point defect relaxation process / high aspect ratio / low contact resistance / quantum chemistry calculation / field effect transistor / ferroelectric / ゲート絶縁膜 / 高誘電率 / 欠陥 / gate oxide / dielectric constant / defects / x-ray photoelectron spectroscopy Less
  • Research Projects

    (14 results)
  • Research Products

    (79 results)
  • Co-Researchers

    (26 People)
  •  Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial AnalysesPrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Tohoku University
  •  Robustness of Three-Dimensional MOSFETs

    • Principal Investigator
      IWAI Hiroshi
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Study on dielectric constant of ultrathin films in gate structures

    • Principal Investigator
      HIROSE Kazuyuki
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Japan Aerospace Exploration Agency
  •  Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon InterfacePrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Musashi Institute of Technology
  •  XPS Study of electrical defects in thin HfAlOx films formed on Si substrates

    • Principal Investigator
      HIROSE Kazuyuki
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Japan Aerospace Exploration Agency
  •  断面光電子分光法による非晶質シリコン酸化膜の組成および結合状態密度の深さ方向分析Principal Investigator

    • Principal Investigator
      服部 健雄
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Musashi Institute of Technology
  •  Studies on Carrier Trap Levels at Ultrathin SiO_2/Si Interface and Its Relation with Microscopic StructuresPrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      表面界面物性
    • Research Institution
      Musashi Institute of Technology
  •  Development of Ultra-smooth Si Surface by the Control of SiO_2/Si Interface Formation on an Atomic-ScalePrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Musashi Institute of Technology
  •  Ultimate Materials and Processes for Integrated Intelligent System

    • Principal Investigator
      HORIIKE Yasuhiro
    • Project Period (FY)
      1995 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
      Toyo University
  •  Formation of Extremely Flat Silicon Oxide/Silicon Interface by the Thermal Oxidation of Hydrogen-Terminated Silicon SurfacePrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Musashi Institute of Technology
  •  Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide FilmPrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Musashi Institute of Technology
  •  その場観察用X線光電子分光分析器の開発とシリコン酸化・窒化極薄膜の形成機構の解明Principal Investigator

    • Principal Investigator
      服部 健雄
    • Project Period (FY)
      1989 – 1991
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Research Institution
      Musashi Institute of Technology
  •  超ULSIのための高品質SiO_2極薄膜の作成とSiO_2/Si界面の極微細構造評価Principal Investigator

    • Principal Investigator
      服部 健雄
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Musashi Institute of Technology
  •  Investigation on Improvement in the Ultrasoft X-ray Excited Photoelectron SpectroscopyPrincipal Investigator

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      Musashi Institute of Technology

All 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation

  • [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010

    • Author(s)
      T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
    • Journal Title

      Applied Physics Letters Vol. 96, No. 10

    • NAID

      110008106358

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Si-SiO_2系の形成・構造・物性」、表面科学 (日本表面科学会)2010

    • Author(s)
      服部健雄, 廣瀬和之
    • Journal Title

      (社)日本表面科学会創立30周年記念特集号分野別記念解説 Vol. 31, No. 1

    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009

    • Author(s)
      K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
    • Journal Title

      ECS Trans Vol.16

      Pages: 29-34

    • Data Source
      KAKENHI-PROJECT-18063009
  • [Journal Article] Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film2009

    • Author(s)
      K. Kakushima, K. Tachi, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
    • Journal Title

      Journal of Applied Physics Vol. 106, No. 12

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009

    • Author(s)
      K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
    • Journal Title

      ECS Transactions 16

      Pages: 29-34

    • Data Source
      KAKENHI-PROJECT-18063009
  • [Journal Article] 巻頭言、LSIにかかわる技術の変遷と課題2009

    • Author(s)
      服部健雄
    • Journal Title

      応用物理学会誌 Vol. 78, No. 9

      Pages: 841-841

    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Band bending measurement of HfO_2/SiO_2/Si capacitor with ultra-thin La_2O_3 insertion by XPS2008

    • Author(s)
      K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
    • Journal Title

      Applied Surface Science Vol. 254

      Pages: 6106-6108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2008

    • Author(s)
      K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
    • Journal Title

      Journal of Physics : Conference Series Vol. 100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals2008

    • Author(s)
      T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
    • Journal Title

      Journal of Applied Physics Vol. 104, No. 11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Obser-vation of band bending of metal/high-k Si capacitor with high energy x-ray photo-electron spectroscopy and its application to interface dipole measurement2008

    • Author(s)
      K. Kakushima, K. Okamoto, K. Tachi, J. Song, T. Kawanago, K. Tsutsui, N. Sugii, P. Ahmet, T. Hattori, H. Iwai
    • Journal Title

      Journal of Applied Physics Vol. 104, No. 10

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy2008

    • Author(s)
      M. Murugesan, J. C. Bea, C.-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
    • Journal Title

      Journal of Applied Physics Vol. 104, No. 7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Evaluation of Si_3N_4/Si Interface by UV Raman Spectrsocopy2008

    • Author(s)
      A. Ogura, T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
    • Journal Title

      Applied Surface Science Vol. 254

      Pages: 6229-6231

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Activated boron and its concen-tration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements2008

    • Author(s)
      K. Tsutsui, T. Matsuda, M. Watanabe, C-G Jin, Y. Sasaki, B. Mizuno, E. Ikenaga, K. Kakushima, P. Alhmet, T. Maruizumi, H. Nohira, T. Hattori, H. Iwai
    • Journal Title

      Journal of Applied Physics Vol. 104, No. 9

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Photoelectron Spectros-copy Studies of SiO_2/Si Interfaces2007

    • Author(s)
      K. Hirose, H. Nohira, K. Azuma, T. Hattori
    • Journal Title

      Progress in Surface Science Vol. 82

      Pages: 3-54

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Angle-resolved photoelectron spectroscopy on gate insulators2007

    • Author(s)
      T. Hattori
    • Journal Title

      Microelectronics Reliability Vol. 47

      Pages: 20-26

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] Electrical Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si (110) and Si (100) Surfaces2007

    • Author(s)
      M. Higuchi, T. Aratani, T. Hamada, S. Shinagawa, H. Nohira, E. Ikenaga, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi
    • Journal Title

      Japanese Journal of Applied Physics Vol. 46, No. 4B

      Pages: 1895-1898

    • NAID

      10022545462

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen-hydrogen radicals2007

    • Author(s)
      M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Maruizumi, A. Teramoto, T. Ohmi, T. Hattori
    • Journal Title

      Applied Physics Letters Vol. 90, No. 12

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Angle-resolved photoelectron spectroscopy on gate insulators2007

    • Author(s)
      T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi
    • Journal Title

      Microelectronics Reliability Vol. 47

      Pages: 20-26

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] マイクロ波励起プラズマを用いた高品質シリコン窒化膜の形成2007

    • Author(s)
      寺本章伸, 荒谷崇, 樋口正顕, 池永英司, 平山昌樹, 須川成利, 服部健雄, 大見忠弘
    • Journal Title

      真空 (日本真空協会) Vol. 50, No. 11

      Pages: 659-664

    • NAID

      10020009820

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Mgle-resolved photoelectron spectroscopy on gate insulators2007

    • Author(s)
      服部 健雄
    • Journal Title

      Microelectronics Reliability 47

      Pages: 20-26

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] ラジカル窒化シリコン酸窒化膜における窒素プロファイルのX線光電子分光分析による評価2007

    • Author(s)
      河瀬和雅, 梅田浩司, 井上真雄, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
    • Journal Title

      真空 (日本真空協会) Vol. 50, No. 11

      Pages: 672-677

    • NAID

      10020009875

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-82006

    • Author(s)
      T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, et al.
    • Journal Title

      International Journal of High Speed Electronics and Systems (to be published in)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006

    • Author(s)
      K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
    • Journal Title

      IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology

      Pages: 368-371

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006

    • Author(s)
      鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
    • Journal Title

      応用物理学会分科会シリコンテクノロジー No.82-2

      Pages: 55-60

    • NAID

      110004757013

    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] X-ray photoelectron spectroscopy study of dielectric constants for Si compounds2006

    • Author(s)
      K. Hirose, M. Kihara, D. Kobayashi, H. Okamoto, S. Shinagawa, H. Nohira, E. Ikenaga, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi, T. Hattori
    • Journal Title

      Applied Physics letters Vol. 89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard X-ray photoelectron spectroscopy at SPring-82006

    • Author(s)
      T.Hattori et al.
    • Journal Title

      International Journal of High Speed Electronics and Systems (to be published)

    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Valence charges for ultrathin SiO_2 film formed on Si(100)2006

    • Author(s)
      K.Hirose, M.Kihara, H.Okamoto, H.Nohira, E.Ikenaga, Y.Takata, K.Kobayashi, T.Hattori
    • Journal Title

      Journal de Physique IV 132

      Pages: 83-86

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006

    • Author(s)
      K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
    • Journal Title

      2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device-Science and Technology-

      Pages: 25-26

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy2005

    • Author(s)
      Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg et al.
    • Journal Title

      Journal of Electron Spectroscopy and Related Phenomena 144-147

      Pages: 1063-1065

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Angle-resolved XPS studies on transition layers at SiO_2/Si interfaces2005

    • Author(s)
      T.Hattori et al.
    • Journal Title

      J.Electron Spectroscopy & Related Phenomena 144-147

      Pages: 457-460

    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Angle-resolved XPS studies on transition layers at SiO_2/Si interfaces.2005

    • Author(s)
      T.Hattori
    • Journal Title

      J.Electron Spectroscopy and Related Phenomena 144-147

      Pages: 457-460

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Angle-resolved XPS studies on transition layers at SiO_2/Si interfaces2005

    • Author(s)
      T.Hattori
    • Journal Title

      J. Electron Spectroscopy and Related Phenomena 144-147

      Pages: 457-460

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-82005

    • Author(s)
      Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, E.Ikenaga, K.Horiba, S.Shin, M.Arita, K.Shimada, H.Namatame, M.Taniguchi, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, K.Kobayashi
    • Journal Title

      Nuclear Instruments and Methods in Physics Research A 547

      Pages: 50-55

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy2005

    • Author(s)
      Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, M.Taniguchi, S.Shin, T.Ishikawa, K.Kobayashi
    • Journal Title

      Journal of Electron Spectroscopy and Related Phenomena 144-147

      Pages: 1063-1065

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Thermal Stability of LaO_x/Si Interfacial Transition Layer2005

    • Author(s)
      H.Nohira, T.Yoshida, H.Okamoto, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, K.Kobayashi, Y.Takata, T.Hattori
    • Journal Title

      ECS Transactions 1

      Pages: 87-95

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation2005

    • Author(s)
      Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, S.Shin, H.Nohira, T.Hattori
    • Journal Title

      Materials Science Forum 483-485

      Pages: 585-588

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Determination of electron escape depth in ultrathin silicon oxide2005

    • Author(s)
      H.Nohira, H.Okamoto, K.Azuma, Y.Nakata, E.Ikenaga, K.Kobayashi, Y.Takata, S.Shin, T.Hattori
    • Journal Title

      Applied Physics Letters 86・8

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process.2004

    • Author(s)
      T.Hattori
    • Journal Title

      Applied Surface Science 234-1/4

      Pages: 197-201

    • NAID

      10011880703

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004

    • Author(s)
      T.Hattori et al.
    • Journal Title

      Microelectronic Engineering 71(1-4)

      Pages: 283-287

    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004

    • Author(s)
      T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, et al.
    • Journal Title

      Microelectronic Engineering 72

      Pages: 283-287

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004

    • Author(s)
      T.Hattori
    • Journal Title

      Applied Surface Science 234・1-4

      Pages: 197-201

    • NAID

      10011880703

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004

    • Author(s)
      H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, T.Hattori
    • Journal Title

      Applied Surface Science 234

      Pages: 493-496

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] X-ray photoelectron spectroscopy study on SiO_2/Si interface structures formed by three kinds of atomic oxygen at 300℃2004

    • Author(s)
      M.Shioji, T.Shiraishi, K.Takahashi, H.Nohira, K.Azuma, Y.Nakata, Y.Takata, S.Shin, K.Kobayashi, T.Hattori
    • Journal Title

      Applied Physics Letters 84・19

      Pages: 3756-3758

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004

    • Author(s)
      T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai
    • Journal Title

      Microelectronic Engineering 72

      Pages: 283-287

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004

    • Author(s)
      T.Hattori, K.Azuma, Y.Nakata, M.Shioji, T.Shiraishi, T.Yoshida, K.Takahashi, H.Nohira, Y.Takata, S.Shin, K.Kobayashi
    • Journal Title

      Applied Surface Science 234・1〜4

      Pages: 197-201

    • NAID

      10011880703

    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004

    • Author(s)
      T.Hattori et al.
    • Journal Title

      Applied Surface Science 234(1-4)

      Pages: 197-201

    • NAID

      10011880703

    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Chemical and electronic structure of SiO_2/Si interfacial transition layer.2003

    • Author(s)
      T.Hattori
    • Journal Title

      Applied Surface Science 212/213

      Pages: 547-555

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry2003

    • Author(s)
      Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, S.Oda
    • Journal Title

      Journal of Applied Physics 42

      Pages: 1957-1961

    • NAID

      80015977591

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Chemical and electronic structure of SiO_2/Si interfacial transition layer2003

    • Author(s)
      T.Hattori
    • Journal Title

      Applied Surface Science 212-213

      Pages: 547-555

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560025
  • [Journal Article] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems2003

    • Author(s)
      K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, S.Shin, K.Tamasaku, D.Miwa, T.Ishikawa, H.Nohira, T.Hattori, Y.Sugita, O.Nakatsuka, A.Sakai, S.Zaima
    • Journal Title

      Applied Physics Letters 83

      Pages: 1005-1007

    • NAID

      120002338858

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Chemical and electronic structures of Lu2O3/Si interfacial transition layer2003

    • Author(s)
      H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, T.Hattori
    • Journal Title

      Applied Surface Science 216

      Pages: 234-238

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry2003

    • Author(s)
      Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, et al.
    • Journal Title

      Journal of Applied Physics 42

      Pages: 1957-1961

    • NAID

      80015977591

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-8

    • Author(s)
      T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, Y.Sugita, E.Ikenaga, K.Kobayashi, Y.Takata, H.Kondo, S.Zaima
    • Journal Title

      Int.J.High Speed Electronics and Systems (to be publised)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206006
  • [Presentation] 原子スケールで平坦なSiO_2/Si界面極近傍における歪評価2010

    • Author(s)
      服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之, 廣沢一郎
    • Organizer
      応用物理学会、19p-P13-13
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer2010

    • Author(s)
      W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
    • Organizer
      China Semiconductor Technology International Conference(CSTIC)
    • Place of Presentation
      上海、中国
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御2010

    • Author(s)
      茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs2009

    • Author(s)
      W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
    • Organizer
      G-COE PICE International Symposium on Silicon Nano Devices
    • Place of Presentation
      Tokyo Institute of Technology, Japan
    • Year and Date
      2009-10-13
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire2009

    • Author(s)
      H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
    • Organizer
      216^<th> Electrochemical Society Meeting
    • Place of Presentation
      Vienna, Austria
    • Year and Date
      2009-10-09
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化2009

    • Author(s)
      茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
    • Organizer
      第70回応用物理学学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-11
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelec-tron Spectroscopy2009

    • Author(s)
      S. Zaima, T. Hattori
    • Organizer
      International Work-shop for New Opportunities in Hard X-ray Photoelectron Spectroscopy : HAXPES 2009
    • Place of Presentation
      Long Island, NY, USA
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用2009

    • Author(s)
      細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
    • Organizer
      2009春季第56回応用物理学会学術講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II2009

    • Author(s)
      小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
    • Organizer
      第70回応用物理学学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] UVラマン分光法によるSiO_2/Si界面の評価2009

    • Author(s)
      服部真季, 吉田哲也, 小瀬村大亮, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
    • Organizer
      応用物理学会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009

    • Author(s)
      T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-06-25
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] UV-Raman Spectroscopy Study on SiO_2/Si Interface2009

    • Author(s)
      M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi
    • Organizer
      Symposium on Dielectric and Semiconductor Materials、Devices、and Processing、215th ECS Meeting
    • Place of Presentation
      San Francisco
    • Year and Date
      2009-05-25
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術2008

    • Author(s)
      又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
    • Organizer
      2008秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs2008

    • Author(s)
      K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsu i, N. Sugii, A. N. Chandorkar, T. Hattori, and H. Iwai
    • Organizer
      Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用2008

    • Author(s)
      細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers2008

    • Author(s)
      Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
    • Organizer
      7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
    • Place of Presentation
      Shanghai, China
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008

    • Author(s)
      K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
    • Organizer
      214th ECS Meeting
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い2008

    • Author(s)
      アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井 洋
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学船橋キャンパス
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008

    • Author(s)
      K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
    • Organizer
      214th Electrochem. Society (ECS) Meeting (PRiME 2008)
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2008-10-14
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術2008

    • Author(s)
      野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井 洋
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学船橋キャンパス
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Evaluation of Si_3N_4/Si Interface by UV Raman Spectroscopy2007

    • Author(s)
      T. Yoshida, K. Yamasaki, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
    • Organizer
      Fifth International symposium on Control of Semiconductor Interfaces, OA2-5
    • Place of Presentation
      Hachioji, Tokyo
    • Year and Date
      2007-11-13
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性2007

    • Author(s)
      野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井 洋
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18063009
  • [Presentation] Al酸化物・窒化物における相対ケミカルシフトと誘電率の関係の検証2006

    • Author(s)
      鈴木治彦、松田徹、野平博司、高田恭考、池永英司、小林大輔、小林啓介、服部健雄、廣瀬和之
    • Organizer
      第67回応用物理学会学術講演会
    • Place of Presentation
      草津
    • Year and Date
      2006-08-30
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Presentation] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006

    • Author(s)
      K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
    • Organizer
      2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device -Science and Technology-
    • Place of Presentation
      Kawasaki
    • Year and Date
      2006-11-08
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Presentation] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006

    • Author(s)
      K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
    • Organizer
      IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai
    • Year and Date
      2006-10-25
    • Data Source
      KAKENHI-PROJECT-18360026
  • [Presentation] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006

    • Author(s)
      鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
    • Organizer
      応用物理学会分科会 シリコンテクノロジー研究会
    • Place of Presentation
      広島
    • Year and Date
      2006-06-22
    • Data Source
      KAKENHI-PROJECT-18360026
  • 1.  NOHIRA Hiroshi (30241110)
    # of Collaborated Projects: 9 results
    # of Collaborated Products: 34 results
  • 2.  HIROSE Kazuyuki (00280553)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 9 results
  • 3.  MORIKI Kazunori (60166395)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 4.  IWAI Hiroshi (40313358)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 22 results
  • 5.  KOBAYASHI Daisuke (90415894)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 6.  TAKAHASHI Kohro (10124596)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  AKIYA Masahiro (60231833)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  TSUTSUI Kazuo (60188589)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 17 results
  • 9.  KAKUSHIMA Kuniyuki (50401568)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 18 results
  • 10.  PARHAT Ahmet (00418675)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 18 results
  • 11.  KIMURA Kenji (50127073)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  NAKAJIMA Kaoru (80293885)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  TERAMOTO Akinobu (80359554)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 12 results
  • 14.  SUWA Tomoyuki (70431541)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 15.  KINOSHITA Toyohiko (60202040)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 16.  HORIIKE Yasuhiro (20209274)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  SHIRAKI Yasuhiro (00206286)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  YASUDA Yukio (60126951)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  TACHIBANA Aketomo (40135463)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  FUYUKI Takashi (10165459)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  OHMI Shun-ichiro (30282859)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 22.  KOBAYASHI Keisuke (50372149)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 10 results
  • 23.  TAKATA Yasutaka (90261122)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 11 results
  • 24.  鶴島 稔夫 (10236953)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  松波 弘之 (50026035)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  ITO Akio
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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