HASHIMOTO Akihiro 橋本明弘

Researcher Number	10251985
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2016 – 2023: 福井大学, 学術研究院工学系部門, 教授 2012 – 2015: 福井大学, 工学(系)研究科(研究院), 教授 2014: 福井大学, 大学院工学研究科, 教授 2013: 福井大学, 工学系研究科, 教授 2011: 福井大学, 工学研究科, 准教授 … More 2007 – 2011: University of Fukui, Graduate Schcol of Engineering, Associate Professor 2007 – 2008: University of Fukui, 工学研究科, 准教授 2006: 福井大学, 大学院工学研究科, 助教授 2006: University of Fukui, Department of Electrical and Electronics Engineering, Associated Professor, 工学研究科, 助教授 2005: 福井大学, 工学部, 助教授 2003: 福井大学, 助教授 2002 – 2003: 福井大学, 工学部, 助教授 1993 – 1999: 福井大学, 工学部, 助教授 1996 – 1997: 福井大学, 工学部・電子工学科, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Electron device/Electronic equipment / Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator HIGHLY LATTICE MISMATCHED HETEROEPITAXY / Si / InGaN / III-V NITRIDES / ALTERNATING SOURCE SUPPLY MBE / 格子不整合ヘテロエピタクシー / 窒化物半導体 / 格子不整合ヘテロエピタキシ- / シリコン / 窒化インジウムガリウム … More / III族窒化物半導体 / 交互供給MBE法 / A1N単結晶薄膜 / 固相C60薄膜 / AlN単結晶薄膜 / 電界効果トランジスタ / SiC基板 / 炭素系デバイス / グラフェン / 固相C_<60>薄膜 / 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / ブルーシフト / レッドシフト / 発光スペクトル / 輝度劣化現象 / シリコン微粒子 / N_2レーザパルス / レーザアブレーション現象 / ポーラスシリコン … More Except Principal Investigator GaN / GaAs / 2次元評価 / 窒化物半導体 / 界面顕微光応答法 / ワイドバンドギャップ半導体 / InN / ショットキー電極 / グラフェン / Mg doping / MOVPE / 金属／半導体界面 / SiC / キャリア濃度 / アンモニア / InAs / 窒化 / Si / 電極 / ２次元評価 / エピタキシー / タンデム太陽電池 / Mgドーピング / 金属/半導体界面 / 信頼性評価 / 表面損傷 / α-Ga2O3 / 耐圧評価 / IGZO / 欠陥評価 / ショットキー接触 / 金属ー半導体界面 / on resistance / breakdown voltage / p-type semiconductor / field effect transistor / diode / p-n junction / nitride semiconductor / アニール / 正孔濃度 / 高耐圧 / pnダイオード / オン抵抗 / 耐圧 / p形半導体 / 電界効果トランジスタ / ダイオード / pn接合 / Si substrate / two-dimensional electron gas / indium nitride (InN) / III比 / V / 残留キャリア濃度 / N面劣化 / twist / tilt / 電子移動度 / 抵抗率 / CP_2Mg / Si基板 / 二次元電子ガス / Selective area growth / Low temperature growth / Photolysis / Ammonia(NH_3) / ArF excier laser / Indium nitride(InN) / トリメチルインジウム(TMI) / 光分解 / エキシマレーザ / 光化学反応 / MOCVD / 選択成長 / 低温成長 / 光分解反応 / アンモニア(NH_3) / ArFエキシマレーザ / 窒化インジウム(InN) / detection of dislocations / needle-like hillocks / photo-electrochemistry / hole injection / electrochemical etching / 結晶欠陥 / 紫外光照射 / 正孔 / 電流密度-電解電位曲線 / サファイア基板 / 剥離 / 紫外線照射効果 / 陽極溶解反応 / 光電気化学エッチング / 転位 / 貫通転位 / 針状ヒロック / 光電気化学的エッチング / 不均一性 / 電気化学的エッチング / Ga metal / SSD method / ammonia / GaP / Nitridation / GaAs基板 / SSD法 / ウルツ鉱構造 / 閃亜鉛鉱構造 / 金属ガリウム / 合成溶質拡散(SSD)法 / CaAs / バルク結晶 / tandem solar cell / MOCVD growth / heteroepitaxy / nitridation / MOCVD成長 / ヘテロエピタキシャル成長 / 二次元評価 / 窒化ガリウム / 表面制御 / 電子状態 / バンドギャップ / ナノリボン / ナノ構造 / 電子デバイス / 表面保護 / フォトルミネッセンス / X線ロッキングカーブ半値幅 / 相分離 / SNOM / Raman scattering / Parasitic reaction / Growth pressure / 半導体物性 / 結晶成長 / Pt catalyst / NH3 cracking / hetero-structure / 白金族触媒援用MOVPE / 光起電力 / Cp_2Mg / InAlN/InGaNヘテロ構造 / ヘテロ構造 / InGaN / InAlN / 高効率太陽光発電材料・素子 / フォトニックバンドギャップ / 非周期性 / 強局在状態 / 光バンドギャップ / メソスコピック光導波路 / 光局在 Less

Analysis of ohmic metal/semiconductor interfaces by low-temperature SIPM
- Principal Investigator
  
  Shiojima Kenji
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Fukui
Two-dimensional characterization of an initial stage of the degradation of metal/semiconductor interfaces by using scanning internal photoemission microscopy with near-ultra-violet light
- Principal Investigator
  
  Shiojima Kenji
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Fukui
Two-dimensional characterization of degradation mechanism in metal/wide-bandgap semiconductor contacts by scanning internal photoemission microscopy
- Principal Investigator
  
  Shiojima Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
2-dimentional mapping of graphene-inserted metal contacts
- Principal Investigator
  
  SHIOJIMA Kenji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
Fabrication of graphene nanostructures and correlation to electronic properties
- Principal Investigator
  
  TANAKA Satoru
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kyushu University
Surface passivation of GaN by graphene layers
- Principal Investigator
  
  SHIOJIMA Kenji
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui
Basic Research for Carbon Electronics Devices using Solid C_<60> and/or GraphenePrincipal Investigator
- Principal Investigator
  
  HASHIMOTO Akihiro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
A research on InAlN-based tandem solar cells
- Principal Investigator
  
  YAMAMOTO Akio
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Fukui
High quality InN grown by MOVPE and its electron transport properties
- Principal Investigator
  
  YAMAMOTO Akio
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
High-Voltage GaN p-n Junction Diodes with Low Leakage Current
- Principal Investigator
  
  KUZUHARA Masaaki
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui
MOCVD Growth of InN using ArF Excier Laser
- Principal Investigator
  
  YAMAMOTO Akio
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Fukui
Study on bulk crystal growth for nitide semiconductors
- Principal Investigator
  
  YAMAMOTO Akio
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Fukui University
Study on electrochemical etching of nitride semiconductors
- Principal Investigator
  
  YAMAMOTO Akio
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Fukui University
InGaN CRYSTAL GROWTH ON Si SUBSTRATE BY ALTERNATING SOURCE SUPPLY MBEPrincipal Investigator
- Principal Investigator
  
  HASHIMOTO Akihiro
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  FUKUI UNIVERSITY
光の局在領域における電子及び光子の量子相互作用に関する理論的研究
- Principal Investigator
  
  大高眞人
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  University of Fukui
Study on thin-film growth and solar-cell application on InN
- Principal Investigator
  
  YAMAMOTO Akio
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Fukui University
N_2レーザパルスによるポーラスシリコン薄膜のレーザアブレーション機構の解明Principal Investigator
- Principal Investigator
  
  橋本明弘
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Fukui

[Book] 高効率太陽電池の開発と応用 (第4章多接合太陽電池、第2節化合物半導体のエピタキシャル成長、pp49～pp66)2009
- Author(s)
  橋本明弘, 他(分担執筆)
- Total Pages
  18
- Publisher
  シー・エム・シー出版
- Data Source
  KAKENHI-PROJECT-19360141
[Book] 高効率太陽電池の開発と応用2009
- Author(s)
  橋本明弘
- Publisher
  シー・エム・シー出版
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] RF-MBE growth and orientation control of GaN on epitaxial graphene2021
- Author(s)
  Bhuiyan Ashraful G.、Kamada Yuta、Islam Md. Sherajul、Syamoto Riku、Ishimaru Daiki、Hashimoto Akihiro
- Journal Title
  
  Results in Physics
  
  Volume: 20 Pages: 103714-103714
- DOI
  10.1016/j.rinp.2020.103714
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Growth of single crystalline Si on graphene using RF-MBE: Orientation control with an AlN interface layer2021
- Author(s)
  Bhuiyan Ashraful G.、Terai Taiji、Katsuzaki Tomohiro、Takeda Naoki、Hashimoto Akihiro
- Journal Title
  
  Applied Surface Science
  
  Volume: 548 Pages: 149295-149295
- DOI
  10.1016/j.apsusc.2021.149295
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228, KAKENHI-PROJECT-21K04135
[Journal Article] Phonon localization in single wall carbon nanotube: Combined effect of 13C isotope and vacancies2020
- Author(s)
  Islam Md. Sherajul、Howlader Ashraful Hossain、Anindya Khalid N.、Zheng Rongkun、Park Jeongwon、Hashimoto Akihiro
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 128 Issue: 4 Pages: 045108-045108
- DOI
  10.1063/5.0011810
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Vacancy-induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study2020
- Author(s)
  Islam A. S. M. Jannatul、Islam Md. Sherajul、Ferdous Naim、Park Jeongwon、Hashimoto Akihiro
- Journal Title
  
  Physical Chemistry Chemical Physics
  
  Volume: 22 Issue: 24 Pages: 13592-13602
- DOI
  10.1039/d0cp00990c
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Behaviour of Raman B1 (high) mode and evaluation of crystalline quality in the InxGa1?xN alloys grown by RF-MBE2020
- Author(s)
  Bhuiyan Ashraful G、Kuroda Kenji、Islam Md Sherajul、Hashimoto Akihiro
- Journal Title
  
  Bulletin of Materials Science
  
  Volume: 43 Issue: 1
- DOI
  10.1007/s12034-020-02252-x
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon2020
- Author(s)
  Anindya Khalid N.、Islam Md Sherajul、Park Jeongwon、Bhuiyan Ashraful G.、Hashimoto Akihiro
- Journal Title
  
  Current Applied Physics
  
  Volume: 20 Issue: 4 Pages: 572-581
- DOI
  10.1016/j.cap.2020.02.006
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Molecular dynamics study of thermal transport in single-layer silicon carbide nanoribbons2020
- Author(s)
  Islam Md. Sherajul、Islam A. S. M. Jannatul、Mahamud Orin、Saha Arnab、Ferdous Naim、Park Jeongwon、Hashimoto Akihiro
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 1 Pages: 015117-015117
- DOI
  10.1063/1.5131296
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] RF-MBE and MOVPE InxGa1-xN films over the entire composition range: A study on growth method dependence2020
- Author(s)
  Bhuiyan Ashraful G.、Islam Md. Sherajul、Hironaga Daizo、Hashimoto Akihiro
- Journal Title
  
  Superlattices and Microstructures
  
  Volume: 140 Pages: 106448-106448
- DOI
  10.1016/j.spmi.2020.106448
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy2020
- Author(s)
  Bhuiyan Ashraful G.、Ishimaru Daiki、Hashimoto Akihiro
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 20 Issue: 3 Pages: 1415-1421
- DOI
  10.1021/acs.cgd.9b00699
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Molecular beam epitaxy of InAlN alloys in the whole compositional range2020
- Author(s)
  Bhuiyan Ashraful G.、Islam Md. Sherajul、Hashimoto Akihiro
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 1 Pages: 015053-015053
- DOI
  10.1063/1.5139974
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Combined effect of 13C isotope and vacancies on the phonon properties in AB stacked bilayer graphene2020
- Author(s)
  Anindya Khalid N.、Islam Md. Sherajul、Hashimoto Akihiro、Park Jeongwon
- Journal Title
  
  Carbon
  
  Volume: 168 Pages: 22-31
- DOI
  10.1016/j.carbon.2020.06.059
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Fabrication of InN on epitaxial graphene using RF-MBE2019
- Author(s)
  Ishimaru Daiki、Bhuiyan Ashraful G.、Hashimoto Akihiro
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Issue: 4 Pages: 045301-045301
- DOI
  10.1063/1.5092826
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Tunable electronic properties in stanene and two dimensional silicon-carbide heterobilayer: A first principles investigation2019
- Author(s)
  Ferdous Naim、Islam Md. Sherajul、Park Jeongwon、Hashimoto Akihiro
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 2
- DOI
  10.1063/1.5066029
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Journal Article] Vacancy and Curvature Effects on The Phonon Properties of Single Wall Carbon Nanotube2018
- Author(s)
  Ashraful Hossain Howlader, Md. Sherajul Islam, Satoru Tanaka, Akihiro Hashimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 2S2 Pages: 02CB08-02CB08
- DOI
  10.7567/jjap.57.02cb08
- NAID
  210000148655
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Journal Article] Effect of 10 B isotope and vacancy defects on the phonon modes of two-dimensional hexagonal boron nitride2018
- Author(s)
  Md. Sherajul Islam, Khalid N. Anindya, Ashraful G. Bhuiyan, Satoru Tanaka, Takayuki Makino, and Akihiro Hashimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 2S2 Pages: 02CB04-02CB04
- DOI
  10.7567/jjap.57.02cb04
- NAID
  210000148651
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981, KAKENHI-PROJECT-18K04228
[Journal Article] Numerical Ananysisi on Phonon Localization of Vacancy Type Disordered Graphene2015
- Author(s)
  Md. S. Islam, Md. T. Rahaman, A. G. Bhuiyan, A. Hashimoto
- Journal Title
  
  Journal of Circuits, Systems, and Computers
  
  Volume: 24 Issue: 02 Pages: 1540002-1540017
- DOI
  10.1142/s0218126615400022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Effect of vacancy defects on phonon properties of hydrogen passivated GNRs2014
- Author(s)
  Md. S. Islam, S. Tanaka, A. Hashimoto
- Journal Title
  
  Carbon
  
  Volume: 88 Pages: 146-154
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Analysis of vibrational properties of C-doped hexagonal boron nitride (h-BN)2014
- Author(s)
  M. Sherajul-Isram, K. Ushida, S. Tanaka, T. Makino, A. Hashimoto
- Journal Title
  
  Comput. Mater. Sci
  
  Volume: 94 Pages: 225-233
- DOI
  10.1016/j.commatsci.2014.04.047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24540337, KAKENHI-PROJECT-24560369
[Journal Article] Effect of boron and nitrogen doping with native point defects on the vibrational properties of graphene2014
- Author(s)
  M. Sherajul-Isram, K. Ushida, S. Tanaka, T. Makino, A. Hashimoto
- Journal Title
  
  Comput. Mater. Sci
  
  Volume: 94 Pages: 35-43
- DOI
  10.1016/j.commatsci.2014.01.040
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24540337, KAKENHI-PROJECT-24560369
[Journal Article] Polarized microscopic laser Raman scattering spectroscopy for edge structure of epitaxial graphene and localized vibrational mode2014
- Author(s)
  Md. S. Islam, D. Tamakawa, S. Tanaka, T. Makino, A. Hashimoto
- Journal Title
  
  Carbon
  
  Volume: 77 Pages: 1073-1081
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene2014
- Author(s)
  Md. S. Islam, A. G. Bhuiyan, S. Tanaka, T. Makino, A. Hashimoto
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 105 Issue: 24
- DOI
  10.1063/1.4904469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560369
[Journal Article] Numerical analysis on vacancy induced vibrational properties of graphene nanoribbons2013
- Author(s)
  Md. Sherajul Islam, Kenji Ushida, Satoru Tanaka, Akihiro Hashimoto
- Journal Title
  
  Computational Materials Science
  
  Volume: 79 Pages: 356-361
- DOI
  10.1016/j.commatsci.2013.06.047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246014, KAKENHI-PROJECT-24560369
[Journal Article] Numerical experiments on phonon properties of isotope and vacancy-type disordered graphene2013
- Author(s)
  Md. Sherajul Islam, Kenji Ushida, Satoru Tanaka, Akihiro Hashimoto
- Journal Title
  
  Computational Materials Science
  
  Volume: 40 Pages: 115-122
- DOI
  10.1016/j.diamond.2013.10.013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246014, KAKENHI-PROJECT-24560369
[Journal Article] MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content2011
- Author(s)
  K.Sugita, M.Tanaka, K.Sasamoto, A.G.Bhuiyan, A.Hashimoto, A.Yamamoto
- Journal Title
  
  J.Cryst.Growth Vol.318
  
  Pages: 505-508
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] Platinum-catalyst- assisted metalorganic vapor phase epitaxy of InN2011
- Author(s)
  K.Sasamoto, K.Sugita, A.Hashimoto, A.Yamamoto
- Journal Title
  
  J.Cryst.Growth Vol.314
  
  Pages: 62-65
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] C_<60> Field Effect Transistors2010
- Author(s)
  Akihiro Hashimoto
- Journal Title
  
  Handbook of Nanophysics : Nanoelectronics & Nanophotonics 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Recent Advances in InN-based Solar Cells ; Status and Challenges in InGaN and InAlN Solar Cells2010
- Author(s)
  A.Yamamoto, Md.R.Islam, T.T.Kang, A.Hashimoto
- Journal Title
  
  Phys.Stat.Sol.(c) Vol.7
  
  Pages: 1309-1316
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] Few-layer epitaxial graphene grown on vicinal 6H-SiC studies by DUV Raman spectroscopy2010
- Author(s)
  K. Kisoda, S. Kamoi, N. Hasuike, H. Harima, K. Morita, A. Hashimoto and S. Tanaka
- Journal Title
  
  Applied Physics Letters
  
  Volume: vol97 Issue: 3 Pages: 33108-33108
- DOI
  10.1063/1.3466150
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] AIN/InN metal oxide semiconductor heterostructure field effect transistor2010
- Author(s)
  Md.Sherajul Islam, Sakib M.Muhtadi, Md.Tarivir Hasan, Ashraful G.Bhuiyan, Md.Rafiqul Islam, A.Hashimoto, A.Yamamoto
- Journal Title
  
  Phys.Status Solidi
  
  Volume: C7 Pages: 1983-1987
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article]2010
- Author(s)
  A. Hashimoto
- Journal Title
  
  Nano-electronics & Nanophotonics 6
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Few-layer epitaxial graphene grown on vicinal 6H-SiC stud Raman spectroscopy2010
- Author(s)
  K.Kisoda, S.Kamoi, N.Hasuike, H.Harima, K.Morita, A.Hashimoto, S.Tanaka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97 Pages: 33108-33108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] AlN/InN metal oxide semiconductor heterostructure field effect transistor2010
- Author(s)
  Md. Sherajul Islam, Sakib M. Muhtadi, Md. Tanvir Hasan, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto and A. Yamamoto
- Journal Title
  
  Phys. Status Solidi(C)
  
  Volume: vol7 Issue: 7-8 Pages: 1983-1987
- DOI
  10.1002/pssc.200983597
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] 2DEG properties in InGaN/InN/InGaN-based double channel HEMTs2010
- Author(s)
  Md. Tanvir Hasan, Md. Rejvi Kaysir, Md. Sheraju Islaml, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto and A. Yamamoto
- Journal Title
  
  Phys. Status Solidi(C)
  
  Volume: vol7 Issue: 7-8 Pages: 1997-2000
- DOI
  10.1002/pssc.200983608
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] 2DEG properties in InGaN/lnN/InGaN-based double channel HEMTs2010
- Author(s)
  Md.Tanvir Hasan, Md.Rejvi Kaysir, Md.Sheraju Islaml, Ashraful G.Bhuiyan, Md.Rafiqul Islam, A.Hashimoto, A.Yamamoto
- Journal Title
  
  Phys.Status Solidi
  
  Volume: C7 Pages: 1997-2000
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article]2009
- Author(s)
  A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
- Journal Title
  
  Diamond & Related Materials 18
  
  Pages: 388-391
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene2009
- Author(s)
  Akihiro Hashimoto, Hiromitsu Terasaki, Akio Yamamoto, Satoru Tanaka
- Journal Title
  
  Diamond & Related Materials 18
  
  Pages: 388-391
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Raman scattering of In-rich AlxIn1-xN : Unexpected two-mode behavior of A1(LO)2009
- Author(s)
  T.T.Kang, A.Hashimoto, A.Yamamoto
- Journal Title
  
  Phys.Rev.B Vol.79
  
  Pages: 33301-33301
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2009
- Author(s)
  M. Horie, K. Sugita, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Solar Energy Materials and Solar Cells 93
  
  Pages: 1013-1015
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Raman scattering of In-rich Al_xIn_<1-x>N : Unexpected two-mode behavior of A_1(LO)2009
- Author(s)
  T. T. Kang, A, Hashimoto, A. Yamamoto
- Journal Title
  
  Physical revew B 79
  
  Pages: 33301-33301
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] MOVPE growth and Mg doping of InxGa1-xN (x-0.4) for solar cell2009
- Author(s)
  M.Horie, K.Sugita, A.Hashimoto, A.Yamamoto
- Journal Title
  
  Solar Energy Materials and solar cells Vol.93
  
  Pages: 1013-1015
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene2009
- Author(s)
  A.Hashimoto, H.Terasaki, A.Yamamoto, S.Tanaka
- Journal Title
  
  Diamond & Related Materials 18
  
  Pages: 383-391
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article]2009
- Author(s)
  T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
- Journal Title
  
  J. Appl. Phys 106
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Elucidation of factors obstructing quality improvement of MOVPE-grown InN2009
- Author(s)
  A.Yamamoto, K.Sugita, A.Hashimoto
- Journal Title
  
  J.Cryst.Growth Vol.311
  
  Pages: 4636-4640
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2009
- Author(s)
  T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Optics Letters 34
  
  Pages: 2507-2509
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Electron Beam Irradiation Effect for Solid C_60 Epitaxy on Graphene2009
- Author(s)
  A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
- Journal Title
  
  Diamond & Related Materials
  
  Volume: vol18 Pages: 388-391
- URL
  http://www.sciencedirect.com/science/journal/09259635/18/2-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560352
[Journal Article] Terahertz characterization of semiconductor alloy AlInN : negative imaginary conductivity and its meaning2009
- Author(s)
  T.T.Kang, M.Yamamoto, M.Tanaka, A.Hashimoto, A.Yamamoto, R.Sudo, A.Noda, D.W.Liu, K.Yamamoto
- Journal Title
  
  OPTICSLETTER Vol.34
  
  Pages: 2507-2509
- NAID
  120001493899
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2009
- Author(s)
  K. Sugita, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Status Sol 6
  
  Pages: 389-392
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition2009
- Author(s)
  T.T.Kang, M.Yamamoto, M.Tanaka, A.Hashimoto, A.Yamamoto
- Journal Title
  
  J.Appl.Phys. Vol.106
  
  Pages: 53525-53525
- NAID
  120001631795
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] Mg doping behavior of MOVPE InxGa1-xN (x-0.4)2009
- Author(s)
  Md.R.Islam, K.Sugita, M.Horie, A.Hashimoto, A.Yamamoto
- Journal Title
  
  J.Cryst.Growth Vol.311
  
  Pages: 2817-2820
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2009
- Author(s)
  K. Sugita, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Status Sol 6
  
  Pages: 393-396
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2009
- Author(s)
  T.T. Kang, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Rev. B 79
  
  Pages: 33301-33301
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2009
- Author(s)
  Md. R. Islam, K. Sugita, M. Horie, A. Hashimoto, A. Yamamoto
- Journal Title
  
  J. Cryst. Growth 31
  
  Pages: 2817-2820
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene2009
- Author(s)
  Akihiro Hashimoto, et. al
- Journal Title
  
  Diamond & Related Materials 18
  
  Pages: 388-391
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE2008
- Author(s)
  A. Hashimoto
- Journal Title
  
  physica status solidi (c) 5
  
  Pages: 1876-1878
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2008
- Author(s)
  A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
- Journal Title
  
  Phys. Sta. Sol. 5
  
  Pages: 1762-1764
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300℃) in O_2 atmosphere2008
- Author(s)
  K. Sugita, Y. Nagai, D. Matsuoka, A. Hashimoto, H. Harima, A. Yamamoto
- Journal Title
  
  physica status solidi (c) 5
  
  Pages: 1765-1767
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Journal Article] New nitridation technique for mosaicity control in RF-MBE InN growth2008
- Author(s)
  Akihiro Hashimoto, et. al
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 1771-1773
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE2008
- Author(s)
  Akihiro Hashimoto, et. al
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 1876-1878
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2008
- Author(s)
  T.T. Kang, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Applied Physics Letters 92
  
  Pages: 110902-110902
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2008
- Author(s)
  A. Hashimoto, K. Iwao, A. Yamamoto
- Journal Title
  
  Phys. Status Sol. 5
  
  Pages: 1876-1878
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2008
- Author(s)
  K. Sugita, Y. Nagai, D. Matsuoka, A. Hashimoto, H. Harima, A. Yamamoto
- Journal Title
  
  Phys. Status Sol 5
  
  Pages: 1765-1767
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Atmospheric-pressure MOVPE growth of In-rich InAlN2008
- Author(s)
  Y.Houchin, A.Hashimoto, A.Yamamoto
- Journal Title
  
  Phys.Stat.Sol.(c) Vol.5
  
  Pages: 1571-1574
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article] Atmospheric-pressure MOVPE growth of In-rich InAlN2008
- Author(s)
  Y. Houchin, A. Hashimoto, A. Yamamoto
- Journal Title
  
  physica status solidi (c) 5
  
  Pages: 1571-1574
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2008
- Author(s)
  K. Iwao, A. Yamamoto, A. Hashimoto
- Journal Title
  
  Phys. Status Sol. 5
  
  Pages: 1771-1773
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Van der Waals epitaxy of solid C_<60> on graphene sheet2008
- Author(s)
  Akihiro Hashimoto, et. al
- Journal Title
  
  Diamond & Related Materials 17
  
  Pages: 1622-1624
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2008
- Author(s)
  Y. Houchin, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Status Sol 5
  
  Pages: 1571-1574
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] New nitridation technique for mosaicity control in RF-MBE InN growth2008
- Author(s)
  K.Iwao, A.Yamamoto, A.Hashimoto
- Journal Title
  
  Phys.Stat.Sol.(c) Vol.5
  
  Pages: 1771-1773
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2008
- Author(s)
  A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
- Journal Title
  
  Diamond & Related Materials 17
  
  Pages: 1622-1624
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2007
- Author(s)
  Y. Nagai, H. Niwa, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Status Sol. 4
  
  Pages: 2457-2460
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Characterization of MOVPE InN films grown on 3_c-SiC/Si(LLL) templates2007
- Author(s)
  M. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
- Journal Title
  
  physica status solidi (c) 4
  
  Pages: 2441-2444
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Journal Article] High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy2007
- Author(s)
  W. J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Powder Diffraction 22
  
  Pages: 219-222
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Journal Article]2007
- Author(s)
  K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Sta. Sol. 4
  
  Pages: 2461-2464
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] A Quantitative study of Suppression Effect for Oxygen Contamination by Ga Beam Irradiation in InN RF-MBE Growth2007
- Author(s)
  A.Hashimoto
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 500-500
- Data Source
  KAKENHI-PLANNED-18069005
[Journal Article]2007
- Author(s)
  M.S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Status Sol. 4
  
  Pages: 2441-2444
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2007
- Author(s)
  A. Hashimoto, K. Matsumoto, A. Yamamoto
- Journal Title
  
  J. Cryst. Growth 301/302
  
  Pages: 1021-1024
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] A quantitative study of suppressioneffect for oxygen contamination irradiation in InN RF-MOMBE growth2007
- Author(s)
  Akihiro Hashimoto, et. al.
- Journal Title
  
  J. Cryst. Growth 301-302
  
  Pages: 500-503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2007
- Author(s)
  K. Iwao, A. Yamamoto, A. Hashimoto
- Journal Title
  
  Phys. Status Sol. 4
  
  Pages: 2453-2456
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Electrical and optical properties of MOVPE InN doped with Mg using CP_2Mg2007
- Author(s)
  A. Yamamoto, Y. Nagai, H. Niwa, H. Miwa, A. Hashimoto
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 399-402
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Journal Article]2007
- Author(s)
  A. Hashimoto, K. Iwao, A. Yamamoto
- Journal Title
  
  J. Cryst. Growth 301/302
  
  Pages: 500-503
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Fabrication and Characterization of C_<60> FET using A1N insulator Film2007
- Author(s)
  Akihiro Hashimoto, et. al.
- Journal Title
  
  J. Cryst. Growth 301-302
  
  Pages: 1021-1024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] Phys. Status Sol.2007
- Author(s)
  K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
- Journal Title
  
  4
  
  Pages: 2461-2464
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article]2007
- Author(s)
  W.J. Wang, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
- Journal Title
  
  Phys. Status Sol. 4
  
  Pages: 2415-2418
- Data Source
  KAKENHI-PROJECT-19360141
[Journal Article] A comparative study on MOVPE InN films grown on 3_c-SiC/Si(LLL) and sapphire2006
- Author(s)
  T. Kobayashi, M. S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto, Y. Ito
- Journal Title
  
  physica status solidi (a) 203
  
  Pages: 127-130
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Journal Article] MOVPE InN on a 3_c-SiC/Si(LLL) template formed by C^+-ion implantation into Si(LLL)2005
- Author(s)
  A. Yamamoto, T. Kobayashi, T. Yamauchi, M. Sasase, A. Hashimoto, Y. Ito
- Journal Title
  
  physica status solidi (c) 2
  
  Pages: 2281-2284
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Journal Article] Low temperature growth of GaN using catalyst-assisted MOVPE
- Author(s)
  K.Sasamoto, T.Hotta, M.Tanaka, K.Sugita, A.G.Bhuiyan, A.Hashimoto, A.Yamamoto
- Journal Title
  
  Phys.Stat.Sol.(c) in press
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069005
[Patent] In系III族元素窒化物の製造方法およびその装置2009
- Inventor(s)
  山本あき勇, 橋本明弘
- Industrial Property Rights Holder
  福井大学
- Industrial Property Number
  2009-077643
- Filing Date
  2009-03-26
- Data Source
  KAKENHI-PLANNED-18069005
[Patent] In系III族元素窒化物の製造方法及びその装置2009
- Inventor(s)
  山本あき勇、橋本明弘
- Industrial Property Rights Holder
  福井大学
- Industrial Property Number
  2009-077643
- Filing Date
  2009-03-26
- Data Source
  KAKENHI-PLANNED-18069005
[Patent] グラフェンシートの製造方法2007
- Inventor(s)
  橋本明弘
- Industrial Property Rights Holder
  福井大学
- Industrial Property Number
  2007-261188
- Filing Date
  2007-10-04
- Data Source
  KAKENHI-PROJECT-19360141
[Patent] グラフェンシートの製造方法2007
- Inventor(s)
  橋本明弘、田中悟
- Industrial Property Rights Holder
  福井大学
- Filing Date
  2007-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Patent] グラフェンシートの製造方法2007
- Inventor(s)
  橋本明弘
- Industrial Property Rights Holder
  福井大学
- Industrial Property Number
  2007-233535
- Filing Date
  2007-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 多機能２次元形成過程におけるAlN層被覆率のN2ガス流量依存性2022
- Author(s)
  犬飼将成、橋本明弘
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] 多機能2次元構造作製におけるエピタキシャルグラフェン形成過程2021
- Author(s)
  社本利玖、勝崎友裕、水野裕介、橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] ポーラスSiCを用いた多機能2次元構造の形成2021
- Author(s)
  水野裕介，山下雄大，犬飼将成，橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] ポーラスエピタキシャルグラフェン形成におけるSiC表面構造の影響2021
- Author(s)
  平井瑠一、山下雄大、橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] AlN/エピタキシャルグラフェン/SiC構造形成におけるAlN膜厚及びステップ高さの影響2021
- Author(s)
  山下雄大，勝崎友裕，水野裕介，橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04135
[Presentation] AlN保護膜を用いたポーラスエピタキシャルグラフェンの孔径制御2020
- Author(s)
  平井瑠一, 社本利久, 橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 多機能2次元構造を用いたエピタキシャルグラフェン上GaN成長2020
- Author(s)
  社本利玖、平井瑠一、勝崎友裕、橋本明弘
- Organizer
  応用物理学秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 修復された多機能2次元構造を用いたGaN成長2020
- Author(s)
  水野裕介、社本利玖、勝崎友裕、橋本明弘
- Organizer
  応用物理学秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 多機能2次元構造を用いたエピタキシャルグラフェン上薄膜Si成長2020
- Author(s)
  社本利久, 平井瑠一, 橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Si薄膜成長へ向けたエピタキシャルグラフェンの表面改質2020
- Author(s)
  勝崎友裕、社本利玖、平井瑠一、橋本明弘
- Organizer
  応用物理学秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] H2エッチングSiC表面の微細孔形成2020
- Author(s)
  平井瑠一、社本利玖、山下雄大、橋本明弘
- Organizer
  応用物理学秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Influence of Pore Density of Porous Epitaxial Graphene on Aniline Polymerization2019
- Author(s)
  Ryuichi Hirai and Akihiro Hashimoto
- Organizer
  Material Research Meeting 2019 (MRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 極薄AlN中間層を用いたエピタキシャルグラフェン上Si薄膜成長(II)2019
- Author(s)
  寺井汰至、石丸大樹、鎌田裕太、竹内智哉、橋本明弘
- Organizer
  第66回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Repair of multifunctional 2 dimension structures by regrowth of AlN atomic layer in MEE mode2019
- Author(s)
  Yuta Kamada, Tomoya Takeuchi and Akihiro Hashimoto
- Organizer
  13th International Conference on Nitride Semiconductor (ICNS 13) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Orientation Control of a-axis in InN Growth by AlN/Epitaxial Graphene/ 4H-SiC(0001)2019
- Author(s)
  Riku Shamoto, Yuta Kamada and Akihiro Hashimoto
- Organizer
  Material Research Meeting 2019 (MRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] N2プラズマ照射を行ったエピタキシャルグラフェン上極薄AlN中間層の界面状態分析2019
- Author(s)
  鎌田裕太, 竹内智哉, 社本利玖, 橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Repair of Multifunctional Two Dimension Structure by Additional Growth of AlN Atomic Layer in MEE Mode2019
- Author(s)
  Yuta Kamada, Tomoya Takeuchi, Riku Shamoto and Akihiro Hashimoto
- Organizer
  Material Research Meeting 2019 (MRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Epitaxial graphene formation in N2 ambience using Si sublimation method2019
- Author(s)
  Tomoya Takeuchi, Yuta Kamada and Akihiro Hashimoto
- Organizer
  The International Symposium on Epitaxial Graphene (ISEG-2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 新規電極材応用に向けたポーラスエピタキシャルグラフェン上微細孔の制御2019
- Author(s)
  竹田直喜、石丸大樹、橋本明弘
- Organizer
  第66回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] A New Approach for Multifunctional 2 Dimension Structure Formation2019
- Author(s)
  Akihiro Hashimoto and Daiki Ishimaru
- Organizer
  13th International Conference on Nitride Semiconductor (ICNS 13) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] N2雰囲気中エピタキシャルグラフェン形成2019
- Author(s)
  竹内智哉、寺井汰至、鎌田裕太、佐藤祐大、橋本明弘
- Organizer
  第66回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 熱劣化したエピタキシャルグラフェン上極薄AlN中間層の修復2019
- Author(s)
  佐藤祐大、寺井汰至、鎌田裕太、竹内智哉、橋本明弘
- Organizer
  第66回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Orientational Control of Initial Si Nuclei Growth on Epitaxial Graphene Substrate using AlN Multi-functional Intermediate Layer2018
- Author(s)
  T. Terai, D. Ishimaru, and A. Hashimoto
- Organizer
  20th International Conference on Molecular Beam Epitaxy (MBE2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 4H-SiCポーラスエピタキシャルグラフェンの孔径及び孔密度制御2018
- Author(s)
  竹田直喜、石丸大樹、橋本明弘
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 4H-SiC(0001)ポーラスエピタキシャルグラフェンの孔径及び孔密度制御 (Ⅱ)2018
- Author(s)
  竹田直喜、石丸大樹、橋本明弘
- Organizer
  第79回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] エピタキシャルグラフェン上AlN中間層を用いたGaNのa軸配向性制御2018
- Author(s)
  石丸大樹、寺井汰至、橋本明弘
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] エピタキシャルグラフェン上極薄AlN中間層を用いたGaN成長におけるa軸配向制御2018
- Author(s)
  鎌田裕太、寺井汰至、竹内智哉、佐藤祐大、橋本明弘
- Organizer
  第79回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Orientation Control of a-Axis of GaN with using AlN Multi-function Intermediate Layer on Epitaxial Graphene/ 4H-SiC (0001)2018
- Author(s)
  N. Takeda, T. Terai, D. Ishimaru, and A. Hashimoto
- Organizer
  20th International Conference on Molecular Beam Epitaxy (MBE2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] AlNバッファー層を用いたエピタキシャルグラフェン基板上Si初期成長核配向制御2018
- Author(s)
  寺井汰至、石丸大樹、橋本明弘
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Formation and Characterization of Ultra-thin AlN Intermediate Layer on Epitaxial Graphene2018
- Author(s)
  T. Terai, D. Ishimaru, Y. Sato, Y. Kamada, T. Takeuchi, and A. Hashimoto
- Organizer
  International Workshop on Nitride Semiconductor 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] グラフェン上極薄AlN中間層を用いたAlNホモエピタキシャル成長2018
- Author(s)
  佐藤祐大、石丸大樹、寺井汰至、鎌田裕太、竹内智哉、橋本明弘
- Organizer
  第79回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] オージェ電子分光法(AES)によるグラフェン上極薄AlN中間層の界面状態分析2018
- Author(s)
  竹内智哉、寺井汰至、鎌田裕太、佐藤祐大、橋本明弘
- Organizer
  第79回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 極薄AlN中間層を用いたエピタキシャルグラフェン上Si薄膜成長2018
- Author(s)
  寺井汰至、石丸大樹、鎌田裕太、竹内智哉、橋本明弘
- Organizer
  第79回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] Nitride Growth by using Ultra-thin AlN/ Epitaxial Graphene Intermediate Layer on 4H-SiC (0001)2018
- Author(s)
  Y. Sato, D. Ishimaru, T. Terai, Y. Kamada, T. Takeuchi, and A. Hashimoto
- Organizer
  International Workshop on Nitride Semiconductor 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04228
[Presentation] 強制振動子法を用いたポーラス SiC のフォノン解析(Ⅱ)2018
- Author(s)
  佐藤祐大、大八木晋、橋本明弘
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Orientational control of initial Si nuclei growth on epitaxial graphene substrate by RF-MBE2017
- Author(s)
  Taiji Terai, Daiki Ishimaru, Akihiro Hashimoto
- Organizer
  The International Symposium on Epitaxial Graphene (ISEG-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動子法を用いたポーラス SiC のフォノン解析(Ⅰ)2017
- Author(s)
  佐藤祐大、大八木晋、橋本明弘
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Orientational control of a-axis in initial stage of InN by Si nuclei formation on epitaxial graphene substrate2017
- Author(s)
  Daiki Ishimaru, Taiji Terai, Akihiro Hashimoto
- Organizer
  The International Symposium on Epitaxial Graphene (ISEG-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] サブ2次元ナノカーボン系の折れ曲がり効果が及ぼすエッジフォノンへの影響2017
- Author(s)
  大八木晋、Md. Sherajul Islam、南部卓也、橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Effect of 10B Isotope Doping on Phonon Modes of 2D h-BN2017
- Author(s)
  Md. Sherajul Islam, Akihiro Hashimoto
- Organizer
  The 6th International Symposium on Organiv and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] RF-MBE法によるエピタキシャルグラフェン基板上Si初期成長核配向制御2017
- Author(s)
  寺井汰至、石丸大樹、橋本明弘
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 4H-SiC上ポーラスエピタキシャルグラフェン基板を用いたRF-MBE InN初期核形成2017
- Author(s)
  石丸大樹、寺井汰至、橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Control of pore density of porous epitaxial graphene by RF-N2 plasma irradiation2017
- Author(s)
  Naoki Takeda, Daiki Ishimaru, Kosuke Imai, Akihiro Hashimoto
- Organizer
  The International Symposium on Epitaxial Graphene (ISEG-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Numerical study on phonon properties of porous silicon-carbide system by force vibrational method2017
- Author(s)
  Yuta Sato, Shin Oyagi, Akihiro Hashimoto
- Organizer
  The International Symposium on Epitaxial Graphene (ISEG-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] RF-N2プラズマ照射による4H-SiCポーラスエピタキシャルグラフェンの孔密度制御2017
- Author(s)
  竹田直喜、石丸大樹、橋本明弘
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] エピタキシャルグラフェン基板上Si初期成長核を用いたInN成長におけるa軸配向性制御2017
- Author(s)
  石丸大樹、寺井汰至、橋本明弘
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] RF誘導加熱による孔径及び孔密度制御されたポーラスエピタキシャルグラフェン形成2017
- Author(s)
  今井宏友、石丸大樹、橋本明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  横浜市（パシフィコ横浜）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 4H-SiC(0001)上エピタキシャルグラフェン基板を用いたMOVPE法InNエピタキシャル成長2016
- Author(s)
  戸松　侑輝、道幸　雄真、石丸　大樹、橋本　明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 塩酸エッチングしたSiC上エピタキシャルグラフェンの表面解析2016
- Author(s)
  栗本逸清、橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 4H-SiC上エピタキシャルグラフェン基板を用いたMOVPE法InNエピタキシャル成長初期過程2016
- Author(s)
  石丸大樹、戸松侑輝、橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動手法を用いたサブ2次元ナノカーボンのフォノン解析（II）2016
- Author(s)
  大八木　晋、Md. Sherajul Islam、南部　卓也、橋本　明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] PF誘導加熱による微傾斜Si面SiC（0001）上単一ドメインエピタキシャルグラフェンの欠陥密度制御2016
- Author(s)
  道幸　雄真、和田　拓也、今井　宏友、橋本　明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Cl添加によるバンドギャップの揺らぎに対するペロブスカイト太陽電池への影響2016
- Author(s)
  宮野　了一、吉田　清孝、伊藤　省吾、橋本　明弘、牧野　哲征
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動手法による窒化物混晶の格子振動解析（II）2016
- Author(s)
  南部　卓也、大八木　晋、Md. Sherajul Islam、橋本　明弘
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  東京都（東工大）
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Comparative Study of Initial Growth Stage of InN on Epitaxial Graphene by MBE and MOVPE2016
- Author(s)
  D. Ishimaru, Y. Tomatsu, A. Hashimoto
- Organizer
  The 19th International Conference on Molecular Beam Epitaxy (MBE 2016)
- Place of Presentation
  Montpellier
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動手法を用いたサブ2次元ナノカーボンのエッジフォノン解析2016
- Author(s)
  大八木晋、Md. Sherajul Islam、南部卓也、橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Numerical Study on Phonon Properties for Sub 2-dimensional Nano-carbon System by Force Vibrational Method2016
- Author(s)
  Shin Ohyagi, Md. Sherajul Islam, Takuya Nambu, Akihiro Hashimoto
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動子法によるSub２次元グラフェン・ナノ構造の格子振動解析2016
- Author(s)
  橋本　明弘
- Organizer
  第8回九大グラフェン研究会（応用力学研究所）「原子層物質の成長と物性」
- Place of Presentation
  九州大学伊都キャンパス
- Year and Date
  2016-01-29
- Invited
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] RF誘導加熱による微傾斜Si面SiC(0001)上エピタキシャルグラフェン形成の昇温プロファイル依存性2016
- Author(s)
  和田拓也、道幸雄真、今井宏友、橋本明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  新潟市（朱鷺メッセ）
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動手法による窒化物混晶の格子振動解析2015
- Author(s)
  南部　卓也、大八木　晋、Md. Sherajul Islam、橋本　明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] PFPA-NHSを用いたエピタキシャルグラフェン/ポリアニリン構造ナノコンポジットの作製2015
- Author(s)
  今井　宏友、橋本　明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 強制振動手法を用いたサブ2次元ナノカーボンのフォノン解析2015
- Author(s)
  大八木　晋、橋本　明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] 4H-SiC(0001)上エピタキシャルグラフェン基板を用いたMOVPE法InNエピタキシャル成長初期過程2015
- Author(s)
  戸松　侑輝、道幸　雄真、石丸　大樹、橋本　明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] PF誘導加熱による微傾斜Si面SiC（0001）上大面積単一ドメインエピタキシャルグラフェンの形成2015
- Author(s)
  道幸　雄真、今井　宏友、橋本　明弘
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市（名古屋国際会議場）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15K05981
[Presentation] Vibrational Properties of Graphene Nanoribbons with Realistic Edge Structures2014
- Author(s)
  Md. S. Islam, T. Makino, S. Tanaka and A. Hashimoto
- Organizer
  The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
- Place of Presentation
  Fukuoka
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Numerical Study on Phonon Properties of Defective Silicene2014
- Author(s)
  T. Nambu, Md. S. Islam, S. Tanaka and A. Hashimoto
- Organizer
  The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
- Place of Presentation
  Fukuoka
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Vacancy Induced Phonon Properties of Hydrogen Passivated Graphene2014
- Author(s)
  Md. Sherajul Islam, Md. Tawabur Rahman, A. G. Bhuiyan, Akihiro Hashimoto
- Organizer
  IEEE 1st International Conference on Electrical Information and Communication Technology (EICT 2013)
- Place of Presentation
  Khulna, Bangladesh
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 転写グラフェンの曲線状エッジにおける偏光顕微ラマン散乱分光2013
- Author(s)
  玉川大輔, 石田高章, 田中悟, 橋本明弘
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Vibrational Properties of Graphane with Vacancy - Type Defects2013
- Author(s)
  Md. Sherajul Islam, Akihiro Hashimoto
- Organizer
  2013 MRS (Material Research Society) fall meeting
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Al0.7Ga0.3N Growth on Epitaxial Graphene by RF - MBE2013
- Author(s)
  Yuki Sakagawa, Kouzi Shimizu, Takayuki Makino, Akihiro Hashimoto
- Organizer
  2013 MRS (Material Research Society) fall meeting
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] MBE成長In-rich InxAl1-xN混晶フォノンのラマン散乱評価2013
- Author(s)
  小池隆, 金廷坤, 中西晋一, 蓮池紀幸, 木曽田賢治, 播磨弘, 兒玉賢治, 橋本明弘, 山本暠勇
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 水素終端したグラフェンナノリボンの格子振動解析2013
- Author(s)
  牛田憲次, Md. Sherajul Islam, 田中悟, 橋本明弘
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] RF-MBE成長InGaN混晶のB1(high)モードによる成長温度最適化の検討2013
- Author(s)
  坂川祐樹, 兒玉賢治, 廣長大造, 橋本明弘
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] ラマン散乱によるMBE成長InxGa1-xN混晶フォノンの評価2013
- Author(s)
  中西晋一, 金廷坤, 小池隆, 蓮池紀幸, 木曽田賢治, 播磨弘, 兒玉賢治, 橋本明弘, 山本暠勇
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Effect of boron and nitrogen doping on the vibrational properties of graphene2013
- Author(s)
  Md Sherajul Islam, Taknobu Hirooka, Takayuki Makino, Satoru Tanaka, Akihiro Hashimoto
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Growth of AlN on Graphene Substrate by RF2013
- Author(s)
  Kensuke Kasagi, Kouji Shimizu, Yuki Sakagawa, Takayuki Makino, Akihiro Hashimoto
- Organizer
  2013 MRS (Material Research Society) fall meeting
- Place of Presentation
  Boston, U.S.A.
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Analysis of vibrational properties of C - doped hexagonal boron nitride ( h - BN)2013
- Author(s)
  Md sherajul Islam, Takanobu Hirooka, Takayuki Makino, Satoru Tanaka, Akihiro Hashimoto,
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Polarized Microscopic Laser Raman Scattering Spectroscopy for Edge Structure of TransferredEpitaxial Graphene2012
- Author(s)
  D. Tamagawa, T. Ishida, D. Tsunemi, T. Kajiwara, S. Tanaka, A. Hashimoto
- Organizer
  MRS 2012 Autumn Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] ラマン不活性B1(high)振動モードによるInxGa1-xN混晶の結晶性評価2012
- Author(s)
  兒玉賢治, 清水浩司, 橋本明弘, 播磨弘, 金廷坤
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 転写エピタキシャルグラフェンが有する固有応力2012
- Author(s)
  玉川大輔, 石田高章, 田中悟, 橋本明弘
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Full molar fraction Raman spectra from RF-MBE grown InxAl1-xN alloys2012
- Author(s)
  K. Kodama, H. Harima, A. Yamamoto, A. Hashimoto
- Organizer
  ISGN-4
- Place of Presentation
  Russia　St.Petersburg
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] ラマン散乱分光法による中間組成域InGaNの結晶性評価における成長方法の影響2012
- Author(s)
  廣長大造, 兒玉賢治, 橋本明弘, 播磨弘, 金廷坤
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Inference on Raman spectra by the crystal qualityof RF-MBE grown InxAl1-xN alloys (0≤x≤1)2012
- Author(s)
  K. Kasagi, K. Kodama, T. Kim, H. Harima, A. Hashimoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Comparative studies of Raman Spectra from InGaN grown by MBE and by MOVPE2012
- Author(s)
  D. Hironaga, K. Kadama, K. Karagi, A. Hashimoto, H. Harima
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] MOVPE法InN成長のためのNH3分解におけるPt触媒温度(RT～1000℃)効果2012
- Author(s)
  杉田憲一, 廣長大造, 三原章宏, 橋本明弘, 山本暠勇
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] InGaN混晶のラマン散乱分光法におけるB1振動モードの組成依存性2012
- Author(s)
  兒玉賢治, 播磨弘, 山本〓勇, 橋本明弘
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A comparative study on MOVPE InGaN with intermediate In compositions grown on GaN/sapphire template and AlN/Si(111) substrate2012
- Author(s)
  A. Mihara, Y.d Zheng, D. Hironaga, A. Hashimoto, N. Shigekawa, a. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] New polytypes (4H, 6H) of III-nitrides grown by　hetero-step-flow mode on vicinal SiC surfaces2012
- Author(s)
  Y. Ishiyama, M. Takagi, Y. Higashihara, J. Nishinaka, M. Funato, Y. Kawakami, A. Hashimoto, S. Tanaka
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] AFM/LFM同時測定によるSiO_2上転写グラフェンの表面観察2012
- Author(s)
  常見大基, 山口喜弓, 石田大輔, 栗栖悠輔, 田中悟, 橋本明弘, 福井一俊, 山本晃司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Intrinsic Stress of Transfer Epitaxial Graphene2012
- Author(s)
  K. Kodama, Md. Sherajul Islam, S. Tanaka, A. Hashimoto
- Organizer
  IUMRS-ICEM
- Place of Presentation
  神奈川県横浜市
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Numerical Analysis on The Lattice Vibration of Percolation Network of Graphene2012
- Author(s)
  Md. Sherajul Islam,K. Ushida, S. Tanaka, A. Hashimoto
- Organizer
  IUMRS-ICEM
- Place of Presentation
  神奈川県横浜市
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 転写エピタキシャルグラフェンのエッジにおける偏光顕微ラマン散乱分光2012
- Author(s)
  玉川大輔, 田中悟, 橋本明弘
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Vibrational Properties of Percolation Network of Graphene Nanoribbons2012
- Author(s)
  Md. Sherajul Islam, 牛田憲次, 橋本明弘, 田中悟
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Large Area Transfer Method for Epitaxial Graphene2012
- Author(s)
  T. Ishida, D. Tsunemi, T. Kajiwara, S. Tanaka, A. Hashimoto
- Organizer
  MRS 2012 Autumn Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Numerical Study on Lattice Vibration of Hydrogen Passivated Percoration Graphene Network2012
- Author(s)
  N. Ushida, Md. Sherajul Islam, S. Tanaka, A. Hashimoto
- Organizer
  MRS 2012 Autumn Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] Behavior of B1(high) Mode in Raman Spectra from InxGa1-xN Alloys ( 0 ≤ x ≤ 1 ) Grown by RF-MBE2012
- Author(s)
  K. Kodama, K. Shimizu, T. Kim, H. Harima, A. Hashimoto
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] 強制振動子法によるグラフェンのパーコレーションネットワークの振動解析2012
- Author(s)
  牛田憲次, Md. Sherajul Islam, 橋本明弘, 田中悟
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24560369
[Presentation] エピタキシャルグラフェンの大面積転写(III)2012
- Author(s)
  石田高章, 森田康平, 田中悟, 橋本明弘
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Graphene formation on GaN substrates and electrical characteristics of metal/graphene/GaN structure2011
- Author(s)
  K. Tanaka, Y. Shimotsuji, S. Tanaka, A. Hashimoto, and K. Shiojima
- Organizer
  Graphene 2011
- Place of Presentation
  Bilbao Spain
- Year and Date
  2011-04-11
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Repair for Process-induced Defects of Transferred Graphene2011
- Author(s)
  T.Ishida, Y.Shimotsuji, R.Kajiwara, S.Tanaka, A.Hashimoto
- Organizer
  Graphene 2011
- Place of Presentation
  Bilbao Spain
- Year and Date
  2011-04-11
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化2011
- Author(s)
  田中浩太郎、下辻康広、橋本明弘、塩島謙次、田中悟
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  福井大学
- Year and Date
  2011-09-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 大面積転写エピタキシャルグラフェンの偏光顕微ラマン散乱分光2011
- Author(s)
  玉川大輔, 石田高章, 山本〓勇, 田中悟, 橋本明弘
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 偏光顕微ラマン散乱分光法による欠陥修復転写エピタキシャルグラフェンの評価2011
- Author(s)
  石田高章, 玉川大輔, 梶原隆司, 田中悟, 橋本明弘
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] エピタキシャルグラフェンの大面積転写(II)2011
- Author(s)
  下辻康広, 石田高章, 森田康平, 田中悟, 橋本明弘
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Repair for Process-induced Defects of Transferred Graphen2011
- Author(s)
  T. Ishida, Y. Shimotsuji, R. Kajiwara, S. Tanaka, and A. Hashimoto
- Organizer
  Graphene 2011
- Place of Presentation
  Bilbao Spain
- Year and Date
  2011-04-11
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] グラフェンの転写過程で形成された欠陥の修復2011
- Author(s)
  石田高章, 下辻康広, 梶原隆司, 田中悟, 橋本明弘
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Catalyst-assisted MOVPE growth of InN and GaN2011
- Author(s)
  A.Yamamoto, K.Sasamoto, K.Sugita, A.Hashimoto
- Organizer
  European Materials Research Society 2011 Spring Meeting
- Place of Presentation
  Nice, France(招待講演)
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] Large Area Transfer of Epitaxial Graphene2011
- Author(s)
  Y. Shimotsuji, T. Ishida, K. Morita, S. Tanaka, and A. Hashimoto
- Organizer
  Graphene 2011
- Place of Presentation
  Bilbao Spain
- Year and Date
  2011-04-11
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] RF-MBE Growth of GaN and InN on Epitaxial graphene Substrate2011
- Author(s)
  K. Kodama, S. Tanaka, A. Yamamoto, and A. Hashimoto
- Organizer
  9th International Conference Nitride Semiconductors(ICNS-9)
- Place of Presentation
  Glasgow UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] RF-MBE Growth of GaN and InN on Epitaxial graphene Substrate2011
- Author(s)
  K.Kodama, S.Tanaka, A.Yamamoto, A.Hashimoto
- Organizer
  9th International Conference Nitride Semicond uctors (ICNS-9)
- Place of Presentation
  Glasgow UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化2011
- Author(s)
  田中浩太郎、下辻康広、橋本明弘、塩島謙次、田中悟
- Organizer
  平成23年度電気関係学会北陸支部連合大会
- Place of Presentation
  福井大学
- Year and Date
  2011-09-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積転写グラフェン層の顕微ラマン散乱分光測定2010
- Author(s)
  寺崎博満, 塩島謙次, 森田康平, 田中悟, 日比野浩樹, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Year and Date
  2010-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] RF-MBE法によるHOPG基板上InN成長2010
- Author(s)
  小竹弘倫, 田畑裕行, 下辻康広, 朴木博則, 山本嵩勇, 橋本明弘
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚、日本
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] SiO2/Si基板上大面積転写エピタキシャルグラフェン層のラマン散乱分光法評価2010
- Author(s)
  寺崎博満, 橋本明弘, 森田康平, 田中悟, 日比野浩樹
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚、日本
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A roll of low-temperature MEE buffer layer in m-plane GaN growth onm-plane ZnO substrate2010
- Author(s)
  Y.Shimotsuji, A.Yamamoto, A.Hashimoto
- Organizer
  16^<th> 1nt.Conf.on Molecular Beam Epitaxy(MBE 2010)
- Place of Presentation
  Berlin, Germmany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] MOVPE growth of InAlN/InGaN heterostructures with an intermediate In composition range2010
- Author(s)
  K.Sugita, M.Tanaka, K.Sasamoto, A.G.Bhuiyan, A.Hashimoto, A.Yamamoto
- Organizer
  16th International Conference on Crystal Growth
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] A New Transfer Process of Epitaxial Graphene2010
- Author(s)
  A. Hashimoto
- Organizer
  23rd International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kokura, Japan
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] エピタキシャル・グラフェンの大面積転写技術2010
- Author(s)
  橋本明弘
- Organizer
  第2回九大グラフェン研究会 (主催・九大応用力学研究所)
- Place of Presentation
  九州大学、福岡、日本
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE growth of InN on HOPG substrate2010
- Author(s)
  H. Kotake, Y. Shimotsuji, A. Yamamoto and A. Hashimoto
- Organizer
  16^<th> Int. Conf. on Molecular Beam Epitaxy(MBE 2010)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Growth temperature dependence of Cp_2Mg supply effects on MOVPE InN growth2010
- Author(s)
  K.Sugita, K.Sasamoto, A.Hashimoto, A.Yamamoto
- Organizer
  2010 International Workshop on Nitride Semiconductors
- Place of Presentation
  Tampa, USA
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] A roll of low-temperature MEE buffer layer in m-plane GaN growth on m-plane ZnO substrate2010
- Author(s)
  Y. Shimotsuji, A. Yamamoto and A. Hashimoto
- Organizer
  MBE 2010
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 各種ZnO単結晶基板上のGaN初期成長膜界面のラザフォード後方散乱法による評価2010
- Author(s)
  井澤佑介、尾賀孝宏*、伊田貴寛、栗山一男、橋本明弘、小竹弘倫, 上條健
- Organizer
  法政大学イオン工学シンポジウム
- Place of Presentation
  法政大学
- Year and Date
  2010-12-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] エピタキシャルグラフェン引き剥がしプロセスにおけるTi-C結合の形成2010
- Author(s)
  下辻康広, 橋本明弘, 森田康平, 田中悟
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] ZnO基板上皿面GaN成長の低温MEEバッファ層による効果2010
- Author(s)
  下辻康広, 朴木博則, 田畑裕行, 山本嵩勇, 橋本明弘
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚、日本
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A New Transfer Process of Epitaxial Graphene”(lnvited)2010
- Author(s)
  A.Hashimoto
- Organizer
  23rd International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kokura, Japan
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] エピタキシャルグラフェン/Tiテープを用いたSiO2/Si基板上への大面積グラフェン転写プロセス2010
- Author(s)
  寺崎博満, 橋本明弘, 森田康平, 田中悟, 日比野浩樹
- Organizer
  2010年春季・第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚、日本
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE growth of InN on HOPG substrate2010
- Author(s)
  H.Kotake, Y.Shimotsuji, A.Yamamoto, A.Hashimoto
- Organizer
  16^<th> Int.Conf.on Molecular Beam Epitaxy(MBE 2010)
- Place of Presentation
  Berlin, Germmany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer2009
- Author(s)
  A. Hashimoto, H. Terasaki, K. Morita, S. Tanaka, H. Hibino
- Organizer
  Abstracts of MRS 2009 Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009
- Author(s)
  Y. Shimotsuji, A. Yamamoto and A. Hashimoto
- Organizer
  International Conference Nitride Semiconductors-8(ICNS-8)
- Place of Presentation
  Jeju Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A Breakthrough Toward Wafer-size Bi-layer Graphene Transfer2009
- Author(s)
  橋本明弘, 寺崎博満, 森田康平, 田中悟, 日比野浩樹
- Organizer
  Abstracts of MRS 2009 Fall Meeting, Symp. L5.2
- Place of Presentation
  Boston, USA
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Adducts formation in MOCVD growth of InAlN : Growth pressure dependence2009
- Author(s)
  M.Tanaka, M.Yamamoto, T.T.Kang, A.Hashimoto, A.Yamamoto
- Organizer
  The 51st TMS Electronic Materials Conference
- Place of Presentation
  Pennsylvania, USA
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] RF-MBE法によるHOPG基板上InN成長2009
- Author(s)
  小竹弘倫, 田畑裕行, 下辻康広, 山本〓勇, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Characterization of InN grown by Pt catalyst-assisted MOVPE2009
- Author(s)
  K. Sasamoto, K. Sugita, A. Hashimoto, A. Yamamoto
- Organizer
  Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた転写グラフェン層のSiO_2基板上への大面積転写 (ラマン測定)2009
- Author(s)
  寺崎博満, 森田康平, 田中悟, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A breakthrough toward wafer-size bi-layer graphene transfer2009
- Author(s)
  橋本明弘, 寺崎博満, 森田康平, 日比野浩樹, 田中悟
- Organizer
  Technical Digest of International Conference on Si & Related Materials 2009, (ICSCRM2009), Tu-P-86
- Place of Presentation
  Nurnberg, Germany
- Year and Date
  2009-10-17
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] ZnO基板上m面GaN成長の低温MEEバッファ層による効果2009
- Author(s)
  下辻康広, 朴木博則, 田畑裕行, 山本〓勇, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009
- Author(s)
  下辻康広, 山本嵩勇, 橋本明弘
- Organizer
  Abstract book of 8th Int'1 Conference of Nitride Semiconductors (ICNS8), ThP-32
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A breakthrough toward wafer-size bi-layer graphene transfer2009
- Author(s)
  A. Hashimoto, H. Terasaki, K. Morita, H. Hibino and S. Tanaka
- Organizer
  Technical Digest of International Conference on Silicon Carbide & Related Materials 2009,(ICSCRM2009)
- Place of Presentation
  Germany
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Step-graded Interlayers for the improvement of MOVPE InxGa1-xN (x ~ 0. 4) Epi-layer Quality2009
- Author(s)
  Md. R. Islam, Y. Ohmura, A. Hashimoto, A. Yamamoto, K. Kinoshita, Y. Koji
- Organizer
  Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層転写過程のLEEM/AFM観察2009
- Author(s)
  森田康平, 寺崎博満, 塩島謙次, 田中悟, 日比野浩樹, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate2009
- Author(s)
  A. Hashimoto, H. Terasaki and S. Tanaka
- Organizer
  Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(DIAMOND2009)
- Place of Presentation
  Athens, Greek
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer2009
- Author(s)
  橋本明弘, 寺崎博満, 森田康平, 田中悟, 日比野浩樹
- Organizer
  Abstracts of MRS 2009 Fall Meeting, Symp. L5.2
- Place of Presentation
  Boston, USA
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate2009
- Author(s)
  A. Hashimoto, H. Terasaki, S. Tanaka
- Organizer
  Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009)
- Place of Presentation
  Athens, Greek
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層の転写法2009
- Author(s)
  寺崎博満, 塩島謙次, 森田康平, 田中悟, 日比野浩樹, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層の転写法2009
- Author(s)
  寺崎博満, 橋本明弘, 塩島謙次, 森田康平, 田中悟, 日比野浩樹
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山、日本
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate2009
- Author(s)
  橋本明弘, 寺崎博満, 田中悟
- Organizer
  Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009), O62
- Place of Presentation
  Athens, Greek
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate2009
- Author(s)
  橋本明弘, 寺崎博満, 田中悟
- Organizer
  Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009), O62
- Place of Presentation
  Athens, Greek
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた転写グラフェン層のSiO_2基板上への大面積転写 (再転写手法)2009
- Author(s)
  寺崎博満, 森田康平, 田中悟, 橋本明弘
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2009-03-19
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer2009
- Author(s)
  A. Hashimoto, H. Terasaki, K. Morita, S. Tanaka and H. Hibino
- Organizer
  MRS 2009 Fall Meeting, Symp
- Place of Presentation
  Boston, USA
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21560352
[Presentation] Pt catalyst-assisted metalorganic vapor phase epitaxy of InN2009
- Author(s)
  K.Sasamoto, K.Sugita, A.Hashimoto, A.Yamamoto
- Organizer
  The 51st TMS Electronic Materials Conference
- Place of Presentation
  Pennsylvania, USA
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] Recent Advances in InN-based Solar Cells2009
- Author(s)
  A.Yamamoto, Md R.Islam, T.- T.Kang, A.Hashimoto
- Organizer
  Status and Challenges in InGaN and InAlN Solar Cells, European Materials Research Society 2009 Fall Meeting Warsaw
- Place of Presentation
  Poland(招待講演)
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009
- Author(s)
  下辻康広, 山本嵩勇, 橋本明弘
- Organizer
  Abstract book of 8th Int'l Conference of NitrideSemicon ductors (ICNS8), ThP-32
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009
- Author(s)
  M. Yamamoto, Ting-Ting Kang, M. Tanaka, A. Hashimoto, A. Yamamoto
- Organizer
  Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 転写されたSiC上エピタキシャルグラフェン層の層数・表面構造評価2009
- Author(s)
  上原直也, 寺崎博満, 森田康平, 塩島謙次, 日比野浩樹, 水野清義, 橋本明弘, 田中悟
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山、日本
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A breakthrough toward wafer-size bi-layer graphene transfer2009
- Author(s)
  橋本明弘, 寺崎博満, 森田康平, 日日比野浩樹, 田中悟
- Organizer
  Technical Digest of International Conference on Silicon Cai Materials 2009, (ICSCRM2009), Tu-P-86 (Late News)
- Place of Presentation
  Nurnberg, Germany
- Year and Date
  2009-10-17
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積転写グラフェン層の顕微ラマン散乱分光測定2009
- Author(s)
  寺崎博満, 橋本明弘, 塩島謙次, 森田康平, 田中悟, 日比野浩樹
- Organizer
  2009年秋季・第70回応用物理学会学術講演会
- Place of Presentation
  富山大学、富山、日本
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell2008
- Author(s)
  Akihiro Hashimoto
- Organizer
  15th Int'l Conference on Molecular BeamEpitaxy (MBE2008), MP28
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Direct Measurements of Van der Waals Force in HOPG2008
- Author(s)
  Akihiro Hashimoto
- Organizer
  2^<nd> Conference on New Diamond & Nano Carbons 2008 (NDNC2008), P1-064
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2008-05-27
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene2008
- Author(s)
  Akihiro Hashimoto
- Organizer
  2^<nd> Conference on New Diamond & Nano Carbons 2008 (NDNC2008), Oral B4-002
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2008-05-26
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE InN Growth on Step-ordered Off-angle Sapphire Substrates2008
- Author(s)
  Akihiro Hashimoto
- Organizer
  Int. Workshop on Nitride Semiconductor 2008 (IWN2008), WS2a
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A breakthrough toward wafer-size bi-layer graphene transfer2008
- Author(s)
  A. Hashimoto, H. Terasaki, K. Morita, H. Hibino, S. Tanaka
- Organizer
  Technical Digest of International Conference on Silicon Carbide & Related Materials 2009
- Place of Presentation
  Nurnberg, Germany
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Elucidation of obstructing factors in improving MOVPE-grown InN quality2008
- Author(s)
  A. Yamamoto, K. Sugita, A. Hashimoto
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Suitzerland
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] Step-flow Growth in Solid C_<60> Epitaχy on Graphene2008
- Author(s)
  Akihiro Hashimoto
- Organizer
  19th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, a Nitrides, (DIAMOND2008)
- Place of Presentation
  Sitges, Spain
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Graphene/SiC上の固相C60薄膜のファンデルワールスエピタキシー2008
- Author(s)
  橋本明弘
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部、船橋
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene2008
- Author(s)
  A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
- Organizer
  Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE growth of In-rich InGaN for Tandem Solar Cell2008
- Author(s)
  A. Hashimoto
- Organizer
  The 15th International Conference on Molecular Beam Epitaxy (MBE2008)
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] MBE法によるグラフェン/傾斜SiC基板上固相C60薄膜のステップフロー成長2008
- Author(s)
  橋本明弘
- Organizer
  第69回応用物理学会学術講演会, 5a-X-1
- Place of Presentation
  中部大学、愛知
- Year and Date
  2008-09-05
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Λ study on near-field photoluminescence inhomogeneity in In-rich InAlN2008
- Author(s)
  T. T. Kang, Y. Houchin, A. Hashimoto, A. Yamamoto
- Place of Presentation
  Montreux Switzerland
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] RF-MBE InN Growth on Step-ordered Off-angle Sapphire Substrates2008
- Author(s)
  A. Hashimoto, H. Terasaki, S. Tanaka
- Organizer
  Technical Digests of Int. Workshop on Nitride Semiconductor 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A Study of Mg-doping Behavior of RF-MBE InN using Homo-junction Structure2008
- Author(s)
  A. Hashimoto
- Organizer
  The 15th International Conference on Molecular Beam Epitaxy (MBE2008)
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] RF-MBE法による高品質InN 用のテンプレートとしての微傾斜サファイア基板上のAIN成長2008
- Author(s)
  橋本明弘
- Organizer
  第69回応用物理学会学術講演会, 4a-CA-8
- Place of Presentation
  中部大学、愛知
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell2008
- Author(s)
  A. Hashimoto, K. Iwao H. Hohnoki, A. Yamamoto
- Organizer
  Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] 傾斜SiC基板上エピクキシャルグラフェンの表面欠陥近傍の顕微ラマン分光測定2008
- Author(s)
  橋本明弘
- Organizer
  第69回応用物理学会学術講演会, 2p-R-10
- Place of Presentation
  中部大学、愛知
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Step-flow Growth in Solid C60 Epitaxy on Graphene2008
- Author(s)
  A. Hashimoto, H. Terasaki, S. Tanaka
- Organizer
  Delegate Manual of 19th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2008)
- Place of Presentation
  Sitges, Spain
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Graphenen層の分子間力測定2008
- Author(s)
  橋本明弘
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部、船橋
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A Study of Mg-doping Behavior of RF-MBE InN using Homo-junction Structure2008
- Author(s)
  Akihiro Hashimoto
- Organizer
  15th Int'l Conference on Molecxilar Beam Epitaxy (MBE2008), MP25
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] New nitridation technique for mosaicity Control in RF-MBE InN Growth2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  7th International Conference of Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Transfer of Large Area Graphene Sheets from Carbonized 6H-SiC by a Direct Bonding Technique2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  Material Research Society(MRS)2007 Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell2007
- Author(s)
  A. Hashimoto, K. Iwao, A. Yamamoto
- Organizer
  Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A Trade-off Relation between Tilt and Twist Angle Fluctuations in InN Grown by RF-MBE2007
- Author(s)
  A. Hashimoto, A. Yamamoto, K. Iwao
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Low-temperature annealing effects of MOVPE InN : Improvement of photoluminescence properties (in Japanese)2007
- Author(s)
  Y. Nagai, K. Sugita, A. Hashimoto, A. Yamamoto
- Organizer
  The 54th Spring Meeting of the Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2007-03-27
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] MOVPE GROWTH OF In-RICH InAlN FOR InAlN TANDEM SOLAR CELL2007
- Author(s)
  Y. Houchin, A. Hashimoto, A. Yamamoto
- Organizer
  17th Internatoinal Photovoltaic Science and Engineering Conference
- Year and Date
  2007-12-05
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] RF-MBE法で成長したInNにおけるサファイア基板二段階窒化の効果2007
- Author(s)
  橋本明弘
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学、札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet2007
- Author(s)
  A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
- Organizer
  Abstract book of The 18th Europian Diamond and Related Mterials
- Place of Presentation
  Berlin
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Atmospheric-Pressure MOVPE Growth of In-Rich InAlN2007
- Author(s)
  Y. Houchin, A. Hashimoto, A. Yamamoto
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A trade-off relation between tilt and twist angle fluctuations in lnN grown by RF-MBE2007
- Author(s)
  A. Hashimoto
- Organizer
  7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-16
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] Mosaicity Control of In-rich InGaN in RF-MBE Growth by Template Technique2007
- Author(s)
  K. Iwao, Y. Yamada, A. Yamamoto, A. Hashimoto
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  18th European conference on diamond, diamond-like materials, carbon nanotubes, and nitrides
- Place of Presentation
  Berlin, Germany
- Year and Date
  2007-09-12
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A new formation method of large area grapheme on SiO2/Si substrate2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  18th European conference on diamond, diamond-like materials, carbon nanotubes, and nitrides
- Place of Presentation
  Berlin, Germany
- Year and Date
  2007-09-13
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] MOVPE growth of In-rich InAlN for InAlN tandem solar cell2007
- Author(s)
  Y.Houchin, A.Hashimoto, A.Yamamoto
- Organizer
  17th International Photovoltaic Science and Engineering Conference (PVSEC-17)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] MOVPE Growth and Mg-doping of InxGa1-xN (x~0. 4) for Tandem Solar Cell2007
- Author(s)
  M. Horie, A. Hashimoto, A. Yamamoto
- Organizer
  Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Transfer of Large Area Graphene Sheets from Carbonized 6H-SiC by a Direct Bonding Technique2007
- Author(s)
  A. Hashimoto, K. Iwao, S. Tanaka, A. Yama- moto
- Organizer
  Abstracts of MRS 2007 Fall Meeting
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] SiO2/Si基板上への大面積グラフェン形成法2007
- Author(s)
  橋本明弘
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学、札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Marked Improvements in Electrical and Optical Properties for MOVPE InN Annealed at a Low Temperature (~300 C) in O2 Atmosphere2007
- Author(s)
  Y. Nagai, K. Sugita, A. Hashimoto, A. Yamamoto
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  17th International Photovoltaic Science and Engineering Conference(PVSEC-17)
- Place of Presentation
  福岡コンベンションセンター,福岡
- Year and Date
  2007-12-05
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Status and substrate-related issues for MOVPE InN2007
- Author(s)
  A.Yamamoto, K.Sugita, A.Hashimoto
- Organizer
  European Materials Research Society 2007 Spring Meeting
- Place of Presentation
  Strasbourg, France(招待講演)
- Data Source
  KAKENHI-PLANNED-18069005
[Presentation] The Importanve of Reducing Strain for the Improvement of Crystalline Quality of MOVPE InN2007
- Author(s)
  K. Sugita, A. Hashimoto, A. Yamamoto
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Etching and Optical Deterioration of Nitrogen-Fa Face of Wultzite InN in NH3 Ambient2007
- Author(s)
  A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] New Nitridation Technique for Mosaicity Control in RF-MBE InN Growth2007
- Author(s)
  K. Iwao, A. Yamamoto, A. Hashimoto
- Organizer
  Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Mosaicity control of In-rich InGaN in RF-MBE growth by template technique2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  7th International Conference of Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] GaInNAs Epitaxy for High Efficient Tandem Solar Cell by RF-MBE (Invited)2007
- Author(s)
  A. Hashimoto
- Organizer
  Abstracts of MBE-Taiwan 2007
- Place of Presentation
  Kaohsiung, Taiwan
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A New Formation Method of Large Area Graphene on SiO2/Si Substrate2007
- Author(s)
  A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
- Organizer
  Abstract book of The 18th Europian Diamond and Related Mterials
- Place of Presentation
  Berlin
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE2007
- Author(s)
  Akihiro Hashimoto
- Organizer
  7th International Conference of Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] MOVPE Growth of In-rich InAlN for InAlN Tandem Solar Cell2007
- Author(s)
  Y. Houchin, A. Hashimoto, A. Yamamoto
- Organizer
  Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-19360141
[Presentation] Mg-doping of MOVPE InN using CP_2Mg (LL) (in Japanese)2006
- Author(s)
  Y. Nagai, K. Niwa, H. Miwa, A. Hashimoto, A. Yamamoto
- Organizer
  The 53th Spring Meeting of the Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2006-03-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] Mg-doping of MOVPE InN using CP_2Mg (L)"(in Japanese)2006
- Author(s)
  Y. Nagai, K. Niwa, H. Miwa, A. Hashimoto, A. Yamamoto
- Organizer
  The 53th Spring Meeting of the Japan Society of Applied Physics and Related Societies
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2006-03-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] Adduct Formation of CP_2Mg with NH_3 in MOVPE Growth of Mg-doped InN2006
- Author(s)
  Y. Nagai, H. Miwa, A. Hashimoto, A. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors 2006
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2006-10-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] Crystalline quality of MOVPE InN grown on 3_c-SiC/Si(LLL) substrates(in Japanese)2006
- Author(s)
  M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
- Organizer
  The 67th Fall Meeting of the Japan Society of Applied Physics
- Place of Presentation
  Kusatsu, Japan
- Year and Date
  2006-08-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] Characterization of MOVPE InN films grown on 3_c-SiC/Si(LLL) templates2006
- Author(s)
  M. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
- Organizer
  International Workshop on Nitride Semiconductors 2006
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2006-10-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] Metalorganic vapor phase epitaxial (MOVPE) growth of InN2005
- Author(s)
  A. Yamamoto, H. Miwa, A. Hashimoto
- Organizer
  INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS AND THIN FILMS 2005
- Place of Presentation
  San Diego, USA
- Year and Date
  2005-05-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] MOVPE growth of high quality InN on 3_c-SiC/Si(LLL) substrates(in Japanese)2005
- Author(s)
  M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
- Organizer
  Technical Reports of the Institute of Electronics, Information and CommunicationEngineers
- Place of Presentation
  Fukui, Japan
- Year and Date
  2005-11-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] "Mg-doping effects of MOVPE InN using CP_2Mg" (in Japanese)2005
- Author(s)
  Y. Nagai, K. Niwa, H. Miwa, A. Hashimoto, A. Yamamoto
- Organizer
  Technical Reports of the Institute of Electronics, Information and Communication Engineers
- Place of Presentation
  Fukui, Japan
- Year and Date
  2005-11-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] "MOVPE growth of high quality InN on Si(LLL) substrates" (in Japanese)2005
- Author(s)
  M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y, Ito
- Organizer
  The 67th Fall Meeting of the Japan Society of Applied Physics
- Place of Presentation
  Tokushima, Japan
- Year and Date
  2005-09-09
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278
[Presentation] A comparative study on MOVPE InN films grow on 3c-SiC/Si(LLL) and sapphire substrates2005
- Author(s)
  T. Kobayashi, M. S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto, Y. Ito
- Organizer
  European Materials Research Society 2005 FALL MEETING
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2005-09-05
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560278

1. YAMAMOTO Akio (90210517)

# of Collaborated Projects: 10 results

# of Collaborated Products: 86 results
2. SHIOJIMA Kenji (70432151)

# of Collaborated Projects: 6 results

# of Collaborated Products: 9 results
3. KUZUHARA Masaaki (20377469)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. FUKUI Kazutoshi (80156752)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. TANAKA Satoru (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
6. KOMORI Fumio (60170388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. MIZUNO Seigi (60229705)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. VISIKOVSKIY Anton (70449487)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KANGAWA Yoshihiro (90327320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. INAGAKI Yuji (10335458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. OHKUBO Mitugu (80260561)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 大高眞人 (60108248)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. TAKAOKA Hidetoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 牧野哲征

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

HASHIMOTO Akihiro 橋本 明弘

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Basic Research for Carbon Electronics Devices using Solid C_<60> and/or GraphenePrincipal Investigator

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InGaN CRYSTAL GROWTH ON Si SUBSTRATE BY ALTERNATING SOURCE SUPPLY MBEPrincipal Investigator

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HASHIMOTO Akihiro 橋本明弘