Kangawa Yoshihiro 寒川義裕

… Alternative Names

KANGAWA Yoshihiro 寒川義裕

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Researcher Number	90327320
Other IDs	https://orcid.org/0000-0002-4982-8883
External Links
Affiliation (Current)	2025: 九州大学, 応用力学研究所, 教授
Affiliation (based on the past Project Information) *help	2022 – 2025: 九州大学, 応用力学研究所, 教授 2017 – 2020: 九州大学, 応用力学研究所, 教授 2007 – 2016: KYUSHU UNIVERSITY, Research Institute for Applied Mechanics, Associate Professor 2004 – 2006: Kyushu University, Research Institute for Applied Machanics, Associate Professor, 応用力学研究所, 助教授 2003: 東京農工大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Inorganic materials/Physical properties / Medium-sized Section 30:Applied physics and engineering and related fields Except Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 窒化アルミニウム / 溶液成長 / 反応経路探索 / 表面プロセス / 化合物半導体 / 化学気相成長 / 結晶工学 / 結晶成長 / テンプレート基板 / 窒化物半導体 / パワーデバイス用材料 / その場観察 … More Except Principal Investigator … More AlN / 窒化物半導体 / AlGaN / 結晶成長 / 非極性面 / 深紫外LED / 結晶工学 / エピタキシャル成長 / HVPE / ナノ構造 / far-UVC / LED / AｌNテンプレート / 高温アニール / アニール / AlNテンプレート / 超格子 / 転位 / 偏析 / 窒化物混晶半導体 / 特異構造場 / 計算物理 / 量子ドット / 自然超格子 / 組成変調 / 極性反転 / ボンドエンジニアリング / 特異構造 / 計算科学 / Interstitial atom site / Crystal polarity / ALCHEMI / Energy gap / Oxygen atom / Transmission electron microscopy / Molecular beam enitaxv / Indium nitridp / 酸化インジウム / 占有確率 / アルケミ法 / 電子顕微鏡 / 収束電子回折 / 格子間原子位置 / 結晶極性 / アルケミ / エネルギーギャップ / 酸素 / 透過型電子顕微鏡 / 分子線エピタキシャル成長 / 窒化インジウム / Thermodynamic Analysis / AlCl / AlCl_3 / Free-standing substrate / Epitaxial Growth / 基板結晶 / ナノ結晶場制御 / 原料分子制御 / 厚膜エピタキシャル成長 / 熱力学解析 / 一塩化アルミニューム / 三塩化アルミニューム / 自立基板結晶 / 表面制御 / 電子状態 / エピタキシー / バンドギャップ / ナノリボン / グラフェン / 界面反応エピタキシャル法 / ヘテロエピタキシャル成長 / III族窒化物 / 窒化シリコン / AM-MEE成長法 / AlNダブルバッファー層 / 原子フラックス測定 / 半導体物性 / 電子・電気材料 / エピタキシャル / PA-MBE / 3次元解析 / シリコン / SiC / Si / 電磁場 Less

Crystallographic Mapping of Nonpolar Plane Growth in Nitride Semiconductors and Its Application to Far-Ultraviolet LEDs
- Principal Investigator
  
  三宅秀人
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
Science of Semiconductor Chemical Vapor DepositionPrincipal Investigator
- Principal Investigator
  
  寒川義裕
- Project Period (FY)
  2024 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Kyushu University
Non-polar growth of AlGaN nitride semiconductor and its application in deep ultraviolet LEDs
- Principal Investigator
  
  三宅秀人
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
A new fabrication technique of AlN/sapphire templatePrincipal Investigator
- Principal Investigator
  
  Kangawa Yoshihiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kyushu University
Computational materials design for hetero-bond manipulation
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Mie University
Development of AlN growth method using AlN powderPrincipal Investigator
- Principal Investigator
  
  Kangawa Yoshihiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kyushu University
Fabrication of graphene nanostructures and correlation to electronic properties
- Principal Investigator
  
  TANAKA Satoru
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kyushu University
Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control method
- Principal Investigator
  
  OHACHI Tadashi
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Doshisha University
Development of new method of crystal growth using dynamic electromagnetic force
- Principal Investigator
  
  KAKIMOTO Koichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Nano-analysis of occupation sites of impurity atoms and relation with functional characteristics
- Principal Investigator
  
  KUWANO Noriyuki
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  National University Corporation Tokyo University of Agriculture and Technology

[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Yoshihiro Kangawa Takashi Nakayama, Kenji Shiraishi
- Total Pages
  223
- Publisher
  Springer
- ISBN
  9783319766409
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE2021
- Author(s)
  Kangawa Yoshihiro、Kusaba Akira、Kempisty Pawel、Shiraishi Kenji、Nitta Shugo、Amano Hiroshi
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 21 Issue: 3 Pages: 1878-1890
- DOI
  10.1021/acs.cgd.0c01564
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach2021
- Author(s)
  Yosho Daichi、Matsuo Yuriko、Kusaba Akira、Kempisty Pawel、Kangawa Yoshihiro、Murakami Hisashi、Koukitu Akinori
- Journal Title
  
  CrystEngComm
  
  Volume: 23 Issue: 6 Pages: 1423-1428
- DOI
  10.1039/d0ce01683g
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K15181, KAKENHI-PLANNED-16H06417, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-19H02614
[Journal Article] First‐Principles Calculation of Bandgaps of Al1- xInxN Alloys and Short‐Period Al1-xInxN/Al1-yInyN Superlattices2020
- Author(s)
  Kawamura Takahiro、Fujita Yuma、Hamaji Yuya、Akiyama Toru、Kangawa Yoshihiro、Gorczyca Izabela、Suski Tadeusz、Wierzbowska Maigorzata, Krukowski Stanisiaw
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900530-1900530
- DOI
  10.1002/pssb.201900530
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Oxygen Incorporation Kinetics in Vicinal m (10-10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy2020
- Author(s)
  Yosho Daichi、Shintaku Fumiya、Inatomi Yuya、Kangawa Yoshihiro、Iwata Jun-Ichi、Oshiyama Atsushi、Shiraishi Kenji、Tanaka Atsushi、Amano Hiroshi
- Journal Title
  
  physica status solidi (RRL) Rapid Research Letters
  
  Volume: 2020 Issue: 6 Pages: 2000142-2000142
- DOI
  10.1002/pssr.202000142
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18H03873
[Journal Article] Absolute surface energies of oxygen-adsorbed GaN surfaces2020
- Author(s)
  Kawamura Takahiro、Akiyama Toru、Kitamoto Akira、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 549 Pages: 125868-125868
- DOI
  10.1016/j.jcrysgro.2020.125868
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18K04957
[Journal Article] Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE2020
- Author(s)
  Shintaku Fumiya、Yosho Daichi、Kangawa Yoshihiro、Iwata Jun-Ichi、Oshiyama Atsushi、Shiraishi Kenji、Tanaka Atsushi、Amano Hiroshi
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 5 Pages: 055507-055507
- DOI
  10.35848/1882-0786/ab8723
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873, KAKENHI-PLANNED-16H06418
[Journal Article] Modeling carbon coverage on polar GaN surfaces during MOVPE2020
- Author(s)
  Yosho Daichi、Inatomi Yuya、Kangawa Yoshihiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 048002-048002
- DOI
  10.35848/1347-4065/ab80e2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE2020
- Author(s)
  Inatomi Y.、Kangawa Y.
- Journal Title
  
  Applied Surface Science
  
  Volume: 502 Pages: 144205-144205
- DOI
  10.1016/j.apsusc.2019.144205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19J11998, KAKENHI-PLANNED-16H06418
[Journal Article] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN2020
- Author(s)
  Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Kangawa Yoshihiro
- Journal Title
  
  Scientific Reports
  
  Volume: 10 Issue: 1 Pages: 185701-11
- DOI
  10.1038/s41598-020-75380-3
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PLANNED-16H06427
[Journal Article] Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy2019
- Author(s)
  Inatomi Y.、Kangawa Y.、Pimpinelli A.、Einstein T. L.
- Journal Title
  
  Physical Review Materials
  
  Volume: 3 Issue: 1
- DOI
  10.1103/physrevmaterials.3.013401
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Chemical vapor deposition condition dependence of reconstructed surfaces on 4H-SiC (0001), (000-1), and (1-100) surfaces2019
- Author(s)
  Chokawa Kenta、Makino Emi、Hosokawa Norikazu、Onda Shoichi、Kangawa Yoshihiro、Shiraishi Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 11 Pages: 115501-115501
- DOI
  10.7567/1347-4065/ab4c21
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films2019
- Author(s)
  Kusaba Akira、Li Guanchen、Kempisty Pawel、von Spakovsky Michael、Kangawa Yoshihiro
- Journal Title
  
  Materials
  
  Volume: 12 Issue: 6 Pages: 972-972
- DOI
  10.3390/ma12060972
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Evolution of the free energy of the GaN(0001) surface based on first-principles phonon calculations2019
- Author(s)
  Kempisty Pawel、Kangawa Yoshihiro
- Journal Title
  
  Physical Review B
  
  Volume: 100 Issue: 8
- DOI
  10.1103/physrevb.100.085304
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018
- Author(s)
  Kawamura Takahiro、Kitamoto Akira、Imade Mamoru、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi、Akiyama Toru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 11 Pages: 115504-115504
- DOI
  10.7567/jjap.57.115504
- NAID
  210000149765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04957, KAKENHI-PLANNED-16H06418, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under the oxide vapor phase epitaxy growth conditions2017
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 印刷中 Issue: 8 Pages: 1600706-1600706
- DOI
  10.1002/pssb.201600706
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15K13351, KAKENHI-PROJECT-15K17459, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010
[Journal Article] DFT modeling of carbon incorporation in GaN(0001) and GaN(000-1) metalorganic vapor phase epitaxy2017
- Author(s)
  Kempisty Pawel、Kangawa Yoshihiro、Kusaba Akira、Shiraishi Kenji、Krukowski Stanislaw、Bockowski Michal、Kakimoto Koichi、Amano Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 14 Pages: 141602-141602
- DOI
  10.1063/1.4991608
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 3 Pages: 038002-038002
- DOI
  10.7567/jjap.56.038002
- NAID
  210000147493
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-26246018
[Journal Article] Thermodynamic analysis of (0001) and $(000\bar{1})$ GaN metalorganic vapor phase epitaxy2017
- Author(s)
  Kusaba Akira、Kangawa Yoshihiro、Kempisty Pawel、Valencia Hubert、Shiraishi Kenji、Kumagai Yoshinao、Kakimoto Koichi、Koukitu Akinori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 7 Pages: 070304-070304
- DOI
  10.7567/jjap.56.070304
- NAID
  210000147978
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics2017
- Author(s)
  Kusaba Akira、Li Guanchen、von Spakovsky Michael、Kangawa Yoshihiro、Kakimoto Koichi
- Journal Title
  
  Materials
  
  Volume: 10 Issue: 8 Pages: 948-948
- DOI
  10.3390/ma10080948
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface2017
- Author(s)
  Kempisty Pawel、Strak Pawel、Sakowski Konrad、Kangawa Yoshihiro、Krukowski Stanislaw
- Journal Title
  
  Physical Chemistry Chemical Physics
  
  Volume: 19 Issue: 43 Pages: 29676-29684
- DOI
  10.1039/c7cp05214f
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth2017
- Author(s)
  Inatomi Yuya、Kangawa Yoshihiro、Ito Tomonori、Suski Tadeusz、Kumagai Yoshinao、Kakimoto Koichi、Koukitu Akinori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 7 Pages: 078003-078003
- DOI
  10.7567/jjap.56.078003
- NAID
  210000148014
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy2016
- Author(s)
  A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 12 Pages: 125601-125601
- DOI
  10.7567/apex.9.125601
- NAID
  210000138129
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16J04128
[Journal Article] AlN 溶液成長における固-液界面その場観察装置の開発2015
- Author(s)
  寒川義裕, 三宅秀人, Michal Bockowski, 柿本浩一
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 42 Pages: 232-237
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Journal Article] Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN2015
- Author(s)
  Y. Kangawa, A. Kusaba, H. Sumiyoshi, H. Miyake, M. Bockowski, K. Kakimoto
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 8 Issue: 6 Pages: 065601-065601
- DOI
  10.7567/apex.8.065601
- NAID
  210000137566
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Journal Article] Structural and optical properties of AlN grown by solid source solution growth method2015
- Author(s)
  Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8 Pages: 085501-085501
- DOI
  10.7567/jjap.54.085501
- NAID
  210000145511
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Journal Article] Possibility of AlN growth using Li-Al-N solvent2010
- Author(s)
  Y.Kangawa, K.Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 2569-2573
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Possibility of AlN growth using Li-Al-N solvent2010
- Author(s)
  Y.Kangawa, K.Kakimoto
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 2569-2573
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Possibility of AlN growth using Li- Al- N solvent2010
- Author(s)
  Y.Kangawa
- Journal Title
  
  J.Crystal Growth (掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Numerical Analysis of mc-Si Crystal Growth2010
- Author(s)
  Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Gao Bing, X.J. Chen, Lijun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa
- Journal Title
  
  Solid State Phenomena 156-158,4
  
  Pages: 193-198
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Numerical investigation of crystal growth process of bulk Si and nitrides-a review2007
- Author(s)
  K. Kakimoto, L. Liu, H. Miyazawa, S. Nakano, D. Kashiwagi, X.J. Chen, Y. Kangawa
- Journal Title
  
  Cryst. Res. Technol. 42,12
  
  Pages: 1185-1189
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360012
[Journal Article] Thermodynamic analysis of AlGaN HYPE2005
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth 5月(in press)
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of AlGaN HVPE2005
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of AlGaN HVPE2004
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by hydride vapor phase epitaxy2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kangawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (a) 201
  
  Pages: 2846-2849
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources.2004
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction.2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large Indium mole fraction2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content.2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi(a) 201
  
  Pages: 2846-2849
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by hydride vapor phase epitaxy.2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kangawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (111)A substrate.2004
- Author(s)
  H.Murakami, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 268
  
  Pages: 1-7
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources2004
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources2004
- Author(s)
  Y.Kumagai, J.Kkikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (111)A substrate2004
- Author(s)
  H.Murakami, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 268
  
  Pages: 1-7
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE2003
- Author(s)
  Y.Kangawa, T.Ito, Y.Kumagai, A.Koukitu
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 453-457
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] A quantum Approach on a stability of GaAs surface structure.2003
- Author(s)
  Y.Kangawa, T.Itho, K.Shiraishi, T.Ohihachi, A.Koukitu
- Journal Title
  
  Surface Science(in Japanese) 24
  
  Pages: 642-647
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth.2003
- Author(s)
  Y.Kumagai, T.Yamane, T.Miyaji, H.Murakami, Y.Kangawa, A.Koukitu
- Journal Title
  
  Physica status solidi(c) 0
  
  Pages: 2498-2501
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth2003
- Author(s)
  Y.Kumagai, T.Yamane, T.Miyaji, H.Murakami, Y.Kangawa, A.Koukitu
- Journal Title
  
  physica status solidi (c) 0
  
  Pages: 2498-2501
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE.2003
- Author(s)
  Y.Kangawa, T.Ito, Y.Kumagai, A.Koukitu
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 453-457
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] GaAs表面構造の安定性に対する量子論的アプローチ2003
- Author(s)
  寒川義裕, 伊藤智徳, 白石賢二, 大鉢忠, 纐纈明伯
- Journal Title
  
  表面科学 24
  
  Pages: 642-647
- NAID
  130004486109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Influence constraint from substrate on relationship between input mole ration and solid composition of InGaN during MBE and MOVPE.2003
- Author(s)
  Y.Kangawa, T.Itho, Y.Kumagai, A.Koukitu
- Journal Title
  
  J.Japanease Association for Crystal Growth(in Japanese) 30
  
  Pages: 104-110
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] InGaN気相成長における気相-固相関係に対する基板拘束の影響2003
- Author(s)
  寒川義裕, 伊藤智徳, 熊谷義直, 纐纈明伯
- Journal Title
  
  日本結晶成長学会誌 30
  
  Pages: 104-110
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Presentation] Quantitative compatibility of ab initio thermodynamics with real growth processes of III nitrides semiconductors2021
- Author(s)
  Pawel Kempisty, Konrad Sakowski, Akira Kusaba, and Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Modeling semiconductor epitaxy for next generation power device application2021
- Author(s)
  Yoshihiro Kangawa
- Organizer
  IMI Workshop on Fiber Topology Meets Applications
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio atomistic thermodynamics of pseudo-hot surfaces in the context of GaN growth and doping2021
- Author(s)
  Pawel Kempisty, Stanislaw Krukowski, and Yoshihiro Kangawa
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Magorzata Wierzbowska, and Stanisaw Krukowski
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Impurity incorporation mechanism in GaN MOVPE: ab initio-based approach2021
- Author(s)
  Yoshihiro Kangawa
- Organizer
  SPIE Photonic West OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Bandgaps of InN/AlN superlattices and AlInN alloys: Influence of composition and strain2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Malgorzata　Wierzbowska,　and　Stanislaw Krukowski
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Surface coverage of impurities during GaN and AlN MOVPE2021
- Author(s)
  Daichi Yosho, Yoshihiro Kangawa
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of Lattice Distortion on the Effective Bandgaps of Polar InN/AlN Superlattices2021
- Author(s)
  Kouhei Basaki, Akito Korei, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] More quantitative prediction of III-nitride growth: theoretical and data-driven approaches2021
- Author(s)
  Akira Kusaba, Yoshihiro Kangawa
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Data Analysis for Sputtering and High-Temperature Annealing in AlN Templates Fabrication2020
- Author(s)
  A. Kusaba, Y. Kangawa, K. Norimatsu, and H. Miyake
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A theoretical model for carbon coverage on GaN polar surfaces during MOVPE2020
- Author(s)
  D. Yosho, Y. Inatomi, and Y. Kangawa
- Organizer
  37th Electronic Materials Symposium
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 機械学習によるスパッタAlN膜の高温アニール最適プロセス探索2020
- Author(s)
  草場彰, 寒川義裕, 則松研二, 三宅秀人
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN薄膜におけるらせん転位およびMg不純物と電子物性の相関：第一原理計算に基づく理論解析2020
- Author(s)
  中野崇志、原嶋庸介、大河内勇斗、長川健太、洗平昌晃、白石賢二、押山淳、草場彰、寒川義裕、田中敦之、本田善央、天野浩
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催「電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－」（第25回）
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 微傾斜m-GaN MOVPEにおける酸素混入機構：量子論に立脚したBCFモデル2020
- Author(s)
  用正大地, 新宅史哉, 稲富悠也, 寒川義裕, 岩田潤一, 押山淳, 白石賢二, 田中敦之, 天野浩
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 不純物混入と深紫外デバイス特性の相関2020
- Author(s)
  寒川義裕
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体プロセス・インフォマティクス：不純物混入の抑制2020
- Author(s)
  寒川義裕
- Organizer
  第49回薄膜・表面物理度基礎講座
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体成長プロセスの理論解析：不純物混入機構2020
- Author(s)
  寒川義裕
- Organizer
  日本物理学会2020年秋季大会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Relationship between the band gap of InN/AlN SLs and lattice distortion2019
- Author(s)
  Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Step bunching stability; instability diagram for nitride semiconductor growth2019
- Author(s)
  Y. Inatomi, Y. Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体成長モデリングの進展：不純物混入機構の考察2019
- Author(s)
  寒川義裕
- Organizer
  第11回九大2D物質研究会「2D物質の形成と構造・物性評価」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A new theoretical approach to nitride crystal growth: impurity incorporation mechanism2019
- Author(s)
  Yoshihiro Kangawa, Pawel, Kempisty, and Kenji Shiraishi
- Organizer
  13th International Conference on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Electronic structure analysis of the core structures of threading dislocations in GaN2019
- Author(s)
  Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano
- Organizer
  Compound Semiconductor Week 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] らせん転位およびMg不純物を含むGaNの電子構造解析2019
- Author(s)
  中野崇志、原嶋庸介、長川健太、洗平昌晃、白石賢二、押山淳、草場彰、寒川義裕、田中敦之、本田善央、天野浩
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Band gaps in short period superlattices consisted of different compositional AlInN alloys2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Electronic Properties of GaN Nanopipe Threading Dislocation with m-plane Surface2019
- Author(s)
  Takashi Nakano, Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi, Atsushi Oshiyama, Shigeyoshi Usami, Akira Kusaba, Yoshihiro Kangawa, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamics of vapor-surface equilibria in ab initio modelling of semiconductor growth processes2019
- Author(s)
  Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanisaw Krukowski
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造におけるバンドギャップに対する格子不整合の影響2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 未来材料開拓に向けた相界面制御2019
- Author(s)
  寒川義裕
- Organizer
  第48回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Adatom Density on Polar GaN Surfaces During MOVPE2019
- Author(s)
  Y. Inatomi, Y. Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study on step bunching instability during nitride semiconductor growth2019
- Author(s)
  Yuya Inatomi, and Yoshihiro Kangawa
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles calculation of absolute surface energies of GaN during oxide vapor phase epitaxy growth2019
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体におけるステップバンチング発生機構の解明2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 酸素不純物を考慮したGaN表面エネルギーの面方位依存性2019
- Author(s)
  河村貴宏，北本啓，今西正幸，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] m面GaN-MOVPEにおける酸素混入量の基板傾斜方向依存性の理論解析2019
- Author(s)
  新宅史哉、寒川義裕、岩田潤一、押山淳、白石賢二、田中敦之、天野浩
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MOVPE成長中の極性面AlN表面における吸着原子の安定性解析2019
- Author(s)
  稲富悠也, 寒川義裕, 岩谷素顕, 三宅秀人
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Monte Carlo simulation of GaN MOVPE process: carbon incorporation mechanism2019
- Author(s)
  S. Yamamoto, Y. Okawachi, P. Kempisty, Y. Kangawa, K. Shiraishi
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical approach to oxygen incorporation mechanism in vicinal m-GaN MOVPE2019
- Author(s)
  Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, and Hiroshi Amano
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Calculation of Band Gaps of Al1-xInxN Alloys and Short Period Al1-xInxN/Al1-yInyN Superlattices2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Magorzata　Wierzbowska,　and　Stanisaw Krukowski
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MOVPE条件下におけるⅢ族窒化物半導体無極性面の熱力学解析2019
- Author(s)
  清水紀志, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体におけるステップバンチング発生機構の解明2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-17K06795
[Presentation] First-principles phonon calculations as a method of improving the atomistic thermodynamics of III-nitrides surfaces2019
- Author(s)
  Pawel Kempisty, Yoshihiro Kangawa
- Organizer
  5th Workshop on ab initio phonon calculations
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Study of the origins of carbon impurities on GaN MOVPE from a gas phase reaction perspective2019
- Author(s)
  Yuto Okawachi, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Koichi Kakimoto, Sheng Yo, Yoshio Honda, Shugo Nitta, Hiroshi Amano, Kenji Shiraishi
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 吸着原子の拡散距離が表面モフォロジーに与える影響2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第42回結晶成長討論会
- Data Source
  KAKENHI-PROJECT-17K06795
[Presentation] 吸着原子の拡散距離が表面モフォロジーに与える影響2019
- Author(s)
  稲富悠也、寒川義裕
- Organizer
  第42回結晶成長討論会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical approach to impurity incorporation mechanism in GaN MOVPE2019
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, Kenji Shiraishi
- Organizer
  The 38th Electronic Materials Symposium (EMS-38)
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 未来材料開拓に向けた相界面制御2019
- Author(s)
  寒川義裕
- Organizer
  第48回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-17K06795
[Presentation] キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析2019
- Author(s)
  河村貴宏，竹田浩基，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  2019 年第66 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical approach of oxygen incorporation into GaN grown on vicinal GaN(10-10)2019
- Author(s)
  Fumiya Shintaku, Yoshihiro Kangawa, Jun-Ichi Iwata, Atsushi Oshiyama, Kenji Shiraishi, Atsushi Tanaka, Hiroshi Amano
- Organizer
  1st International Workshop on AlGaN based UV-Laserdiodes
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造のバンドギャップと格子歪みとの関係2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Unintentional doping in GaN MOVPE: A new theoretical model2019
- Author(s)
  Yoshihiro Kangawa
- Organizer
  1st International Workshop on AlGaN based UV-Laserdiodes
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study: Impurity incorporation in GaN MOVPE2018
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer2018
- Author(s)
  Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, and Yoshihiro Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities2018
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio-based approach to crystal growth of nitride semiconductors: alloy composition and impurity concentration2018
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
- Organizer
  4th International Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Surface adatom density and lifetime on polar GaN surfaces during MBE and MOVPE: a theoretical approach2018
- Author(s)
  Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] III族窒化物半導体超格子におけるバンドギャップの組成依存性2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of surface reconstruction on the impurity incorporation in GaN MOVPE2018
- Author(s)
  Yoshihiro Kangawa
- Organizer
  Mathematical Aspects of Surface and Interface Dynamics 16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Modeling and process design of III-nitride MOVPE2018
- Author(s)
  Y. Kangawa, P. Kempisty, K. Shiraishi
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN表面構造およびO不純物の脱離エネルギーの解析2018
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  2018年春季第65回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theory of GaN MOVPE process considering surface reconstruction2018
- Author(s)
  Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto
- Organizer
  SPIE photonic west OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Investigation of Compositional Dependence of Band Gaps in AlN/InN and InN/GaN Superlattices2018
- Author(s)
  Yuma Fujita, Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Malgorzata Wierzbowska, Stanislaw Krukowski
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Contribution of first principles phonon calculations to thermodynamics analysis of GaN surfaces2018
- Author(s)
  Pawel Kempisty, Yoshihiro Kangawa, Stanislaw Krukowski
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio based-approach to impurity incorporation mechanism in GaN MOVPE2018
- Author(s)
  Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
- Organizer
  The 6th Japan-China Symposium on Crystal Growth and Crystal Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles analysis of oxygen adsorption on kinked GaN(0001) surface2018
- Author(s)
  Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices2018
- Author(s)
  Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition2018
- Author(s)
  Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, A. Kusaba, Y. Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018
- Author(s)
  Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, S. F. Chichibu
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Surface reconstruction and impurity incorporation in GaN MOVPE: Ab initio-based modeling2018
- Author(s)
  Y. Kangawa, P. Kempisty, S. Krukowski, K. Shiraishi, K. Kakimoto
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN-MOVPE成長におけるCH4吸着確率とC不純物濃度の面方位依存性2018
- Author(s)
  草場彰，李冠辰，Pawel Kempisty，Michael R. von Spakovsky，寒川義裕
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlInN超格子構造におけるバンドギャップの組成依存性2018
- Author(s)
  藤田裕真，河村貴宏，鈴木泰之，秋山亨，寒川義裕
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000－1): the growth orientation dependence of the C impurity concentration2018
- Author(s)
  Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, and Yoshihiro Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System2018
- Author(s)
  A. Kusaba, G. Li, M. R. von Spakovsky, P. Kempisty, Y. Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A new theoretical model for adatom density and lifetime on polar GaN surfaces during MBE and MOVPE2018
- Author(s)
  Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein
- Organizer
  第37回電子材料シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic improvement of III-nitrides surface thermodynamics by including first principles phonon calculations2018
- Author(s)
  Pawel Kempisty, and Yoshihiro Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN MOVPEにおける炭素取込み機構の考察2018
- Author(s)
  寒川義裕
- Organizer
  第47 回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A theoretical model for carbon incorporation during step-flow growth of GaN by MOVPE2018
- Author(s)
  Y. Inatomi, Y. Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 電子材料開発における計算科学の進展2018
- Author(s)
  寒川義裕
- Organizer
  佐賀大学シンクロトロン光応用研究センター講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体の有機金属気相エピタキシー成長における熱力学解析：半極性面の検討2018
- Author(s)
  瀬田雄基，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳，草場彰，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Monte Carlo simulation of carbon incorporation in GaN MOVPE2018
- Author(s)
  S. Yamamoto, Y. Inatomi, A. Kusaba, P. Kempisty, Y. Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるAlN/InN超格子のバンドギャップ解析2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Adsorption of ammonia in III-nitrides vapor phase epitaxy: theoretical approach based on steepest-entropy-ascent quantum thermodynamics2017
- Author(s)
  A. Kusaba, G. Li, M. R. von Spakovsky, Y. Kangawa, K. Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic Modeling of GaN MOVPE: Contribution of Surface State2017
- Author(s)
  A. Kusaba, Y. Kangawa, P. Kempisty, K. Shiraishi, K. Kakimoto, A. Koukitu
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] NH3化学吸着の非平衡状態発展：最急エントロピー勾配量子熱力学モデリング2017
- Author(s)
  草場彰, Guanchen Li, Michael R. von Spakovsky, 寒川義裕, 柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of lattice constraint on In incorporation in InGaN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto
- Organizer
  The 36th Electronic Materials Symposium
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 分子動力学法によるAlNバッファ層のひずみ緩和シミュレーション2017
- Author(s)
  森本由成，河村貴宏，鈴木泰之，寒川義裕，柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算を用いたOVPE成長中の半極性GaN表面構造の解析2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第46回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Non-Polar GaN Surfaces under the OVPE Growth Conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InGaN薄膜成長における格子不整合とIn組成の相関2017
- Author(s)
  稲富悠也、寒川義裕、伊藤智徳、柿本浩一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, S. F. Chichibu, K. Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of InGaN MOVPE: influence of lattice constraint2017
- Author(s)
  Y. Inatomi, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN(0001)におけるNH3吸着過程の非平衡量子熱力学モデリング：付着係数の理論解析2017
- Author(s)
  草場彰, G. Li, M. R. von Spakovsky, 寒川義裕, 柿本浩一
- Organizer
  第46回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stability of the carbon and oxygen impurities in the subsurface layer near the polar GaN surface2017
- Author(s)
  P. Kempisty, Y. Kangawa, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano
- Organizer
  International Conference on Materials and Systems for Sustainability 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN非極性表面構造の第一原理計算2017
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Steepest-entropy-ascent quantum thermodynamic modeling of NH3 chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy conditions2017
- Author(s)
  A. Kusaba, Guanchen Li, Michael R. von Spakovsky, Y. Kangawa, K. Kakimoto
- Organizer
  E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Density Functional Theory study on stability of carbon and oxygen at GaN(0001) and GaN(000-1) surfaces2017
- Author(s)
  P. Kempisty, Y. Kangawa, K. Shiraishi, S. Krukowski, M. Bockowski, K. Kakimoto, H. Amano
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE法によるGaN成長における極性および非極性GaN表面構造の解析2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN MOVPEにおける結晶成長プロセスの理論解析2017
- Author(s)
  寒川義裕, 芳松克則, 白石賢二, 柿本浩一
- Organizer
  日本学術振興会第162委員会第105回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 窒化物半導体結晶成長モデリングの現状と課題2017
- Author(s)
  寒川義裕, 白石賢二, 柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A kinetic－thermodynamic theory in step－flow growth of compound semiconductor: Application to impurity incorporation in GaN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto
- Organizer
  大阪電気通信大学国際ワークショップ
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlInN薄膜成長における格子不整合と組成取り込み効率の相関2017
- Author(s)
  稲富悠也, 寒川義裕, 伊藤智徳, 柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles study of semipolar GaN (10-11) surfaces under oxide vapor phase epitaxy growth conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Molecular dynamics simulation of strain relaxation of AlN buffer layer2017
- Author(s)
  Yusei Morimoto, Takahiro Kawamura, Yasuyuki Suzuki, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Surface Phase Diagrams of GaN(0001) and (000-1) under the Oxide Vapor Phase Epitaxy Growth Conditions2016
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of InN metalorganic vapor phase epitaxy: influence of growth orientation and surface reconstruction2016
- Author(s)
  A. Kusaba, Y. Kangawa, K. Kakimoto, K. Shiraishi, H. Amano, A. Koukitu
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of Growth Orientation on Driving Force for InN Deposition by MOVPE2016
- Author(s)
  A. Kusaba, Y. Kangawa, M. R. von Spakovsky, K. Shiraishi, K. Kakimoto, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab Initio-Based Approach to Crystal Growth of Nitride Semiconductors: Contribution of Growth Orientation and Surface Reconstruction2016
- Author(s)
  Y. Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN結晶成長シミュレーションの新展開：第一原理計算に基づくアプローチ2016
- Author(s)
  寒川義裕, 白石賢二, 柿本浩一
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] nnovation of AlN solution growth technique2016
- Author(s)
  Y. Kangawa
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors
- Place of Presentation
  新竹（台湾）
- Year and Date
  2016-10-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First Principles Based Simulation for Compound Semiconductor Growth Processes2016
- Author(s)
  Y. Kangawa
- Organizer
  2016 International Conference on Solid State devices and Materials (SSDM 2016) Short Course
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるOVPE成長条件下におけるGaN(000-1)表面構造の解析2016
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stable Structure of GaN(0001) under the OVPE Growth Conditions2016
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Contribution of lattice constraint to indium incorporation during coherent growth of InGaN2016
- Author(s)
  T. Tamura, A. Kusaba, Y. Kangawa, T. Ito, T. Suski, K. Kakimoto, A. Koukitu
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlN固体ソース溶液成長における固‐液界面形状のその場観察2015
- Author(s)
  草場彰, 住吉央朗, 寒川義裕, 三宅秀人, 柿本浩一
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  仙台
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Development of in-situ observation system for high-temperature liquid/solid interfaces: application to solid-source solution growth of AlN2015
- Author(s)
  Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto
- Organizer
  Fifth European Conference on Crystal Growth (ECCG-5)
- Place of Presentation
  Bologna, Italy
- Year and Date
  2015-09-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Development of in situ observation system for liquid/solid interface during solution growth of AlN2015
- Author(s)
  Y. Kangawa, H. Miyake, M. Bockowski, K. Kakimoto
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP2015)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2015-08-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] 電力変換の高効率化に向けた次世代パワーデバイス用AlN結晶の開発2014
- Author(s)
  寒川義裕
- Organizer
  九州大学共進化社会システム創成拠点フォーラム
- Place of Presentation
  市ヶ谷、7A-8
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Microstructure of AlN/AlN(0001) grown by solid-source solution growth (3SG) method2013
- Author(s)
  Y. Kangawa, S. Nagata, K. Kakimoto
- Organizer
  8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII)
- Place of Presentation
  Kloster Seeon, Germany, TU4-3
- Invited
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Dislocation propagation behavior in AlN grown by solid-source solution growth (3SG) method2013
- Author(s)
  Y. Kangawa, S. Nagata, B. M. Epelbaum, K. Kakimoto
- Organizer
  JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学、18a-M6-1
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method2013
- Author(s)
  Y. Kangawa, S. Nagata, B. M. Epelbaum, K. Kakimoto
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  Warsaw, Poland, WeO2-28742
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] AlNバルク成長に向けた2相溶液成長法の提案2011
- Author(s)
  寒川義裕、土岐隆太郎、屋山巴、柿本浩一
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  (東日本大震災のため講演会は中止、アブストラクト発表のみ)
- Year and Date
  2011-03-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AIN バルク成長に向けた2相溶液成長法の提案2011
- Author(s)
  寒川義裕、土岐隆太郎、屋山巴、柿本浩一
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  東日本大震災のため講演会は中止、アブストラクト発表のみ
- Year and Date
  2011-03-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Two-phase-solution growth of AlN on self-nucleated AlN crystal2011
- Author(s)
  Y. Kangawa,, B.M.Epelbaum, K.Kakimoto
- Organizer
  7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7)
- Place of Presentation
  Koyasan University, Japan
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Two-phase-solution growth of AlN on self-nucleated AlN crystal2011
- Author(s)
  Y.Kangawa, B.M.Epelbaum, K.Kakimoto
- Organizer
  7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7)
- Place of Presentation
  Koyasan, Japan(招待講演)
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Differential thermal analysis of Li3N-Al pseudobinary system for AlN growth2010
- Author(s)
  T.Yayama, Y.Kangawa, K.Kakimoto
- Organizer
  The 16th. International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Calculation of Phase Diagrams of Li3N-Al pseudo binary system for AlN Growth2010
- Author(s)
  T.Yayama, Y.Kangawa, K.Kakimoto
- Organizer
  The 3rd International Symposium on Growth of III-Nitride 2010 (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-04
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AlN溶液成長に向けたLi3N-Al擬二元系状態図解析2010
- Author(s)
  屋山巴, 寒川義裕, 柿本浩一
- Organizer
  2010年第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AlN成長に向けたLi3N-Al擬二元系状態図2010
- Author(s)
  屋山巴, 寒川義裕, 柿本浩一
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Microstructures in AlN/sapphire grown by vapor phase epitaxy using Al and Li_3N2009
- Author(s)
  Y.Kangawa
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Li_3Nを窒素源とする気相成長により作製したAlN/sapphireの微細組織観察2009
- Author(s)
  寒川義裕
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(つくば市)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] (招待講演)Possibility of AlN growth using Li-Al-N solvent2009
- Author(s)
  Y.Kangawa
- Organizer
  6th International Workshop on Bulk Nitride
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-26
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] CL studies of AlN/AlN(0001) grown by solid source solution growth method
- Author(s)
  H. Sumiyoshi, Y. Kangawa, S. F. Chichibu, M. Knetzger, E. Meissner, Y. Iwasaki, K. Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2014 (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25420712
[Presentation] 固体ソース溶液成長におけるAlN成長機構の解析
- Author(s)
  住吉央朗, 寒川義裕, 秩父重英, M. Knetzger, E. Meissner, 岩崎洋介, 柿本浩一
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学
- Year and Date
  2014-07-25 – 2014-07-26
- Data Source
  KAKENHI-PROJECT-25420712

1. 秋山亨 (40362363)

# of Collaborated Projects: 2 results

# of Collaborated Products: 19 results
2. 三宅秀人 (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. KAKIMOTO Koichi (90291509)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
4. LIU Lijun (00380535)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
5. KANGAWA Yoshihiro (80423557)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. UDA Satoshi (90361170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. HUANG Xinming (80375104)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. OHACHI Tadashi (40066270)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TANAKA Satoru (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. HASHIMOTO Akihiro (10251985)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. KOMORI Fumio (60170388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. MIZUNO Seigi (60229705)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. VISIKOVSKIY Anton (70449487)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. INAGAKI Yuji (10335458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. KOUKITU Akinori (10111626)

# of Collaborated Projects: 1 results

# of Collaborated Products: 23 results
16. KUWANO Noriyuki (50038022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. HATA Satoshi (60264107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. ITO Tomonori (80314136)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
19. 正直花奈子 (60779734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 河村貴宏 (80581511)

# of Collaborated Projects: 1 results

# of Collaborated Products: 31 results
21. 平松和政 (50165205)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 草場彰 (70868926)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
23. 杉山佳奈美 (70974377)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 新田州吾 (80774679)

# of Collaborated Projects: 1 results

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25. 山田陽一 (00251033)

# of Collaborated Projects: 1 results

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26. 上杉謙次郎 (40867305)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 安永弘樹 (00976855)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. 赤池良太 (10984297)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 小島一信 (30534250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 市川修平 (50803673)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. BOĆKOWSKI Michał

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. MEISSNER Elke

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
33. 押山淳

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Kangawa Yoshihiro 寒川 義裕

KANGAWA Yoshihiro 寒川 義裕

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Science of Semiconductor Chemical Vapor DepositionPrincipal Investigator

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A new fabrication technique of AlN/sapphire templatePrincipal Investigator

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Development of AlN growth method using AlN powderPrincipal Investigator

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[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018

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[Journal Article] Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE2021

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[Journal Article] Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach2021

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[Journal Article] First‐Principles Calculation of Bandgaps of Al1- xInxN Alloys and Short‐Period Al1-xInxN/Al1-yInyN Superlattices2020

Kangawa Yoshihiro 寒川義裕

KANGAWA Yoshihiro 寒川義裕