KOUKITU Akinori 纐纈明伯

Researcher Number	10111626
Other IDs
External Links
Affiliation (Current)	2025: 東京農工大学, 工学(系)研究科(研究院), 名誉教授
Affiliation (based on the past Project Information) *help	2015 – 2016: 東京農工大学, 工学(系)研究科(研究院), 理事 2012 – 2014: 東京農工大学, 工学(系)研究科(研究院), 教授 2010 – 2012: Tokyo University of Agriculture and Technology, 大学院・工学研究院, 教授 2007 – 2009: Tokyo University of Agriculture and Technology, 大学院・共生科学技術研究院, 教授 2008: Tokyo University of Agriculture and Technology, 大学院共生科学技術研究院, 教授 … More 2006: 東京農工大学, 大学院共生科学技術研究院, 教授 2004: National University Corporation Tokyo University of Agriculture and Technology, Institute of Symbiotic Science and Technology, Professor, 大学院・共生科学技術研究部, 教授 2004: 東京農工大学, 大学院・共生科学技術研究部, 教授 2000 – 2003: Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Prof., 工学部, 教授 1990 – 1999: 東京農工大学, 工学部, 助教授 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Crystal engineering / Science and Engineering Except Principal Investigator Applied materials science/Crystal engineering / Nanomaterials/Nanobioscience
Keywords	Principal Investigator GaAs / 気相成長 / HVPE / 窒化物半導体 / 化合物半導体 / その場測定 / Web / エピタキシャル成長 / ALE / 熱力学解析 … More / 原料分子制御 / AlGaN / AlN / HVPE成長 / 自立基板結晶 / マイクロバランス / Internet / Thermodynamic analysis / 計算機能を有するデータベース / MOVPE / インターネット / reconstruction / In situ gravimetric monitoring / In situ monitoring / InGaN / THVPE / 窒化物 / 結晶成長 / 解離吸着 / 光 / グラヴィメトリック法 / 原子層エピタキシー / 表面光吸収法 / 原子層エピタキシ- / Thermodynamic Analysis / AlCl / AlCl_3 / Free-standing substrate / Epitaxial Growth / 基板結晶 / ナノ結晶場制御 / 厚膜エピタキシャル成長 / 一塩化アルミニューム / 三塩化アルミニューム / Compound Semiconductor / Vapor Phase Epitaxy / Data base using calculation system / 電子デバイス / 光デバイス / データーベース / 気相エピタキシャル成長 / Vapor phase epitaxy / Vapor-solid relation / Nitrides / VPE / MBE / III族窒化物 / ネットワーク / 固相組成 / 気相-固相関係 / first principle calculation / surface photo absorption / adsorption with dissociation / surface reconstruction / in situ monitoring / hydrogen-chemisorption / As脱離 / 表面反応 / 第一原理計算 / 表面光吸収 / 表面再構成 / 水素吸着 / Atomic layr epitaxy (ALE) / In situ optical monitoring / 有機金属 / III-V族半導体 / In situ gravimetric Monitoring / recorstruction / Atomic layer epitaxy / In situ optical Monitoring / 大陽電池材料 / 発光素子材料 / 太陽電池 / 発光素子 / InGaN三元混晶 / 受光材料 / 発光材料 / 三元混晶 / 窒化物結晶 / InGaN, HVPE成長,原料分子制御 / バルク結晶 / 窒化ガリウム / 結晶工学 / エピタキシャル / A1GaN / A1N / A1系窒化物 / AIGaN / AIN / HVPE成 / 原料分子制御法 / Al系窒化物 / 厚膜エピタキシー / 再構成表面 / 原子レベル / 薄膜 / 成長メカニズム / 原子・分子レベル … More Except Principal Investigator InN / GaN / in situ monitoring / gravimetric monitoring / compound semiconductor / vapor phase epitaxy / III nitrides / 反応過程 / GaAs基板 / 緩衝層 / 表面光吸収法 / 原子層エキタピシー / 表面反応 / 窒化物 / その場観察 / グラヴィメトリック法 / 化合物半導体 / 気相成長 / III族窒化物 / 電子プローブ / 構造解析 / 構造評価 / 格子欠陥 / 結晶成長 / 組織制御 / デバイス材料 / 電子顕微鏡 / MOークロライド系 / エピタキシ- / GaAs Less

Thick and high quarity InGaN growth by THVPEPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Is it possible to grow InGaN ternary alloy by HVPE?Principal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
New Growth Method for Bulk GaN using molecule-controlling methodPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursorsPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo University of Agriculture and Technology
電子プローブによる光・電子デバイス材料および実装素子のナノ組織解析技術の進展
- Principal Investigator
  
  桑野範之
- Project Period (FY)
  2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  Kyushu University
Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.Principal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  National University Corporation Tokyo University of Agriculture and Technology
Thermodynamic interactive database for vapor phase epitaxy using internetPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
Thermodynamic analysis system for vapor phase epitaxy by using internetPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture & Technology
In situ Monitoring of Surface Reaction of III Nitrides Using Gravimetric and Optical Monitoring Methods
- Principal Investigator
  
  SEKI Hisashi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture & Technology
In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring MethodsPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture & Technology
表面再構成構造のマイクロバランスおよび光を用いたその場測定Principal Investigator
- Principal Investigator
  
  纐纈明伯
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
In situ gravimetric monitoring of atomic layr epitaxy usingPrincipal Investigator
- Principal Investigator
  
  KOUKITU Akinori
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo University of Agriculture and Technology
化合物半導体ALE成長プロセスのその場観察Principal Investigator
- Principal Investigator
  
  纐纈明伯
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo University of Agriculture and Technology
化合物半導体ALE成長プロセスのその場観察Principal Investigator
- Principal Investigator
  
  纐纈明伯
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo University of Agriculture and Technology
化合物半導体ALE成長プロセスのその場観察Principal Investigator
- Principal Investigator
  
  纐纈明伯
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo University of Agriculture and Technology
GaAsのホトエピタキシ-とそのメカニズム
- Principal Investigator
  
  SEKI Hisashi
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo University of Agriculture and Technology

[Book] GaNパワーデバイスの技術展開(分担執筆)2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Total Pages
  264
- Publisher
  サイエンス&テクノロジー
- Data Source
  KAKENHI-PROJECT-23360008
[Book] Technology of Gallium Nitride Crystal Growth Hydride Vapor Epitaxy of GaN2010
- Author(s)
  A.Koukitu, Y.Kumagai
- Total Pages
  326
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069004
[Book] Springer Handbook of Crystal Growth2010
- Author(s)
  Carl Hemmingsson, Bo Monemar, Yoshinao Kumagai, Akinori Koukitu
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069004
[Book] Technology of Gallium Nitride Crystal Growth Hydride Vapor Epitaxy of GaN2010
- Author(s)
  A. Koukitu, Y. Kumagai
- Publisher
  Springer
- Data Source
  KAKENHI-PLANNED-18069004
[Book] 室化物基板および格子整合成長とデバイス特性(天野浩編集)・室化ガリウムのハイドライド気相成長2009
- Author(s)
  纐纈明伯、熊谷義直
- Total Pages
  225
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PLANNED-18069004
[Book] 熱力学解析による化合物半導体の気相成長第79巻,第11号2009
- Author(s)
  纐纈明伯, 熊谷義直
- Publisher
  金属
- Data Source
  KAKENHI-PLANNED-18069004
[Book] 電子物性・材料の事典2006
- Author(s)
  纐纈明伯, (共著, 森泉豊栄, 岩本光正, 小田俊理, 山本寛, 川名明夫編)
- Total Pages
  696
- Publisher
  朝倉書店
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl32017
- Author(s)
  Kenji Iso, Karen Matsuda, Nao Takekawa, Hisashi Murakami ans Akinori Koukitu
- Journal Title
  
  Phisica Status Solidi B
  
  Volume: 254 Issue: 8
- DOI
  10.1002/pssb.201600679
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy2017
- Author(s)
  Y. Inatomi, Y. Kangawa, K. Kakimoto, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 3 Pages: 038002-038002
- DOI
  10.7567/jjap.56.038002
- NAID
  210000147493
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-26246018
[Journal Article] Growth of thick and high crystalline quality InGaN layers on GaN (000-1) substrate using tri-halide vapor phase epitaxy2016
- Author(s)
  Takahide Hirasaki, Martin Eriksson, Quang Tu Thieu, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Per Olof Holtz, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 456 Pages: 145-150
- DOI
  10.1016/j.jcrysgro.2016.08.019
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy2016
- Author(s)
  M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, S. Yamakoshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 13 Pages: 133503-133506
- DOI
  10.1063/1.4945267
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790043, KAKENHI-PROJECT-26246018
[Journal Article] LETTER Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates2016
- Author(s)
  Kenji Iso, Nao Takekawa, Karen Matsuda, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami and Akinori Koukitu
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 10 Pages: 105501-105501
- DOI
  10.7567/apex.9.105501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26246018, KAKENHI-PROJECT-16K04945
[Journal Article] Growth of Thick InGaN Layers by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000143862
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Growth of thick InGaN layers by tri-halide vapor phase epitaxy2014
- Author(s)
  Takahide Hirasaki, Kazuma Asano, Mizuki Banno, Masato Ishikawa, Fumiaki Sakuma, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 5S1 Pages: 1-4
- DOI
  10.7567/jjap.53.05fl02
- NAID
  210000143862
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26246018
[Journal Article] Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability2014
- Author(s)
  Yoshihiro Kangawa, Tomonori Ito, Akinori Koukitu, and Koichi Kakimoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 10 Pages: 1-11
- DOI
  10.7567/jjap.53.100202
- NAID
  210000144512
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24560025, KAKENHI-PROJECT-26246018
[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
- Author(s)
  Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JB10-08JB10
- DOI
  10.7567/jjap.52.08jb10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-24360006, KAKENHI-PROJECT-25390064
[Journal Article] Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates2013
- Author(s)
  Rie Togashi, Sho Yamamoto, K. Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Per-Olof Holtz, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JD05-08JD05
- DOI
  10.7567/jjap.52.08jd05
- NAID
  210000142640
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-25390064
[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
- Author(s)
  Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi, Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polarInN(10-13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H. C. Cho, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  J. Crystal Growth
  
  Volume: vol. 367 Pages: 122-125
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656011
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10-13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C.Cho, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 367 Pages: 122-125
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10- 13) crystal on GaAs(110) by MOVPE2013
- Author(s)
  H.C. Cho, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 367 Pages: 122-125
- DOI
  10.1016/j.jcrysgro.2012.12.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008, KAKENHI-PROJECT-24656011, KAKENHI-PROJECT-25390064
[Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides2013
- Author(s)
  Takahide Hirasaki, Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai,, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 413-416
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase Epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 472-475
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy2013
- Author(s)
  Hisashi Murakami, Sae Takenaka, Tetsuro Hotta, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Pages: 472-475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Influence of growth temperature on the twin formation of the InN{10-13} on GaAs(110) by metalorganic vapor phase epitaxy2012
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 9 Issue: 3-4 Pages: 677-680
- DOI
  10.1002/pssc.201100383
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H_2 and N_22012
- Author(s)
  Y. Kumagai, T. Igi, M. Ishizuki, R. Togashi, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.350 Issue: 1 Pages: 60-65
- DOI
  10.1016/j.jcrysgro.2011.12.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vaporphase epitaxy2012
- Author(s)
  H. Murakami, K. Kumagai and A. Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: vol.10 Pages: 472-475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656011
[Journal Article] Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates2012
- Author(s)
  Toru Nagashima, Akira Hakomori, Takafumi Shimoda, Keiichiro Hironaka, Yuki Kubota, Toru Kinoshita, Reo Yamamoto, Kazuya Takada, Yoshinao Kumagai, Akinori Koukitu, Hiroyuki Yanagi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中) Issue: 1 Pages: 75-79
- DOI
  10.1016/j.jcrysgro.2011.12.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates2012
- Author(s)
  Rie Togashi, Toru Nagashima, Manabu Harada, Hisashi Murakami, Yoshinao Kumagai, Hiroyuki Yanagi, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中) Pages: 197-200
- DOI
  10.1016/j.jcrysgro.2011.10.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers2012
- Author(s)
  Rui Masuda, Chih-Wei Hsu, Martin Eriksson, Yoshinao Kumagai, Akinori Koukitu, Per-Olof Holtz
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 3R Pages: 031103-031103
- DOI
  10.1143/jjap.51.031103
- NAID
  210000140324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Thermodynamic analysis of InGaN-HVPE growth using group-III chlorides, bromides, and iodides2012
- Author(s)
  T. Hirasaki, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: vol.10 Pages: 413-416
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656011
[Journal Article] 窒化物化合物半導体の厚膜結晶成長技術-HVPE成長を中心にして-2012
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Journal Title
  
  鉱山
  
  Volume: 700 Pages: 25-34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy2012
- Author(s)
  J.A.Freitas Jr., J.C.Culbertson, M.A.Mastro, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Growth of semi-polar InN layer on GaAs (110) surface by MOVPE2011
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Issue: 1 Pages: 479-482
- DOI
  10.1016/j.jcrysgro.2010.10.027
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy2011
- Author(s)
  J.Tajima, R.Togashi, H.Murakami, Y.Kumagai, K.Takada, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 441-445
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy2011
- Author(s)
  J. Tajima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
- Journal Title
  
  Physica Status Solidi(c)
  
  Volume: Vol.8No.7-8 Issue: 7-8 Pages: 2028-2030
- DOI
  10.1002/pssc.201000954
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Thermodynamic analysis on HVPE growth of InGaN ternary alloy2011
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Issue: 1 Pages: 441-445
- DOI
  10.1016/j.jcrysgro.2010.11.079
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments2011
- Author(s)
  Tetsuo Fujii, Naoki Yoshii, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 314 Issue: 1 Pages: 108-112
- DOI
  10.1016/j.jcrysgro.2010.11.097
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008
[Journal Article] Tri-halide vapor phase epitaxy of GaN using GaCl_3 gas as a group III precursor2011
- Author(s)
  T.Yamane, K.Hanaoka, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 5 Pages: 1471-1474
- DOI
  10.1002/pssc.201000902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011
- Author(s)
  Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Jpn., J.Appl.Phys. 50
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of semi-polar InN layer on GaAs (110) surface by MOVPE2011
- Author(s)
  Hisashi Murakami, Hyun Chol Cho, Mayu Suematsu, Rie Togashi, Yoshinao Kumagai, Ryuichi Toba, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 479-482
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 5 Pages: 1577-1580
- DOI
  10.1002/pssc.201000867
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] First-principles study on the effect of surface hydrogen coverage on the adsorption process of ammonia on InN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Semi-polar InN(10-13) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas2011
- Author(s)
  H.C.Cho, M.Suematsu, H.Murakami, Y.Kumagai, R.Toba, A.Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 7-8 Pages: 2025-2027
- DOI
  10.1002/pssc.201000951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011
- Author(s)
  J. Tajima, C. Echizen, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50, No.5 Issue: 5R Pages: 055501-055501
- DOI
  10.1143/jjap.50.055501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560009, KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Tri-halide vapor phase epitaxy of GaN using GaCl_3 gas as a group III precursor2011
- Author(s)
  T.Yamane, K.Hanaoka, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-principles study on the effect of surface hydrogen coverage on the adsorption process of ammonia on InN(0001) surfaces2011
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solide C
  
  Volume: 8 Issue: 7-8 Pages: 2267-2269
- DOI
  10.1002/pssc.201000896
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360008, KAKENHI-PROJECT-23760008
[Journal Article] Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Hirokazu Adachi, Aya Otake, Yoshihiro Higashikawa, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2022-2024
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of substrate polarity of (0001) and (0001)GaN surfaces on hydride vapor-phase epitaxy of InN2010
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 651-655
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlNlayers grown by HVPE2010
- Author(s)
  Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 312
  
  Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Selective growth of InN on patterned GaAs(111)B substrate-influence of InN decomposition at the interface2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2019-2021
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation of the decomposition mechanism of AlN(0001) surface under a hydrogen atmosphere2010
- Author(s)
  Hikari Suzuki, Uliana Panyukova, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 7 Pages: 2265-2267
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2010
- Author(s)
  Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 2530-2536
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Measurement of misorientation of AIN layer grown on (111)Si for freestanding substrate2009
- Author(s)
  K.Saito, J.Tajima, Y.Kumagai, M.Ishizuki, K.Takada, H.Morioka, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450℃2009
- Author(s)
  Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2837-2839
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for an initial growth process of GaN on(0001)and(000-1)surfaces by vapor phase epitaxy2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001)Si Face2009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Sohei Abe, Hisashi Murakami, Yoshinao Kumagai, Hironori Okumura, Tsunenobu Kimoto, Jun Suda, Akinori Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016743032
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy2009
- Author(s)
  Toru Nagashima, Keiichiro Hironaka, Masanari Ishizuki, Yoshinao Kumagai, Akinori Koukitu, Kazuya Takada
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of substrate polarity of(0001)and(000-1)GaN surfaces on hydride vap or-phase epitaxy of InN2009
- Author(s)
  Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 651-6550
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical investigation on the decomposition process of GaN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3103-3105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Investigation of polarity dependent InN{0001}decomposition in N_2 and H_2 ambient2009
- Author(s)
  R.Togashi, T.Kamoshita, H.Adachi, H. Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ gravimetric monitoring of surface reactions between sapphire and NH_32009
- Author(s)
  Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3110-3113
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Controlled formation of voids at the AlN/sapphire interface by sapphire decomposition for self-separation of the AlN layer2009
- Author(s)
  J.Tajima, Y.Kubota, M.Ishizuki, T.Nagashima, R.Togashi, H.Murakami, Y.Kumagai, K.Takada, A.Koukitu
- Journal Title
  
  Physica Status Solidi C 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity control and preparation of AIN nano-islands by hydride vapor phase epitaxy2009
- Author(s)
  T. Nagashima, K. Hironaka, M. Ishizuki, Y. Kumagai, A. Koukitu, K. Takada
- Journal Title
  
  Physica Status Solidi(c) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4954-4958
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thin protective AIN layers on sapphire substrates at 1065℃ for hydride vapor phase epitaxy of AIN above 1300 ℃2008
- Author(s)
  J. Tajima, Y. Kubota, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1515-1517
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AlN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 3434-3437
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire2008
- Author(s)
  Yoshinao Kumagai, Jumpei Tajima, Masanari Ishizuki, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
- Journal Title
  
  Appl.Phys.Express 1
- NAID
  210000013992
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AIN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3434-3437
- NAID
  40016057214
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for the decomposition process of_GaN (0001) and (000-1) surfaces2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1632-1636
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111) A grown by metalorganic vapor phase epitaxy2008
- Author(s)
  H. Murakami, J. Torii, H.-C. Cho, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1602-1606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First principles study of the decomposition processes of AIN in ahydrogen atmosphere2008
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 3042-3044
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-temperature growth of thick AIN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy2008
- Author(s)
  K. Eriguchi, T. Hiratsuka, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4016-4019
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Experimental and ab-initio studies of temperature dependent InN decomposition in various ambient2008
- Author(s)
  R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1518-1521
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Self-Separation of a Thick AIN Layer from a Sapphire Substratevia Interfacial Voids Formed by the Decomposition of Sapphire2008
- Author(s)
  Y. Kumagai, J. Tajima, M. Ishizuki, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Applied Physics Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Characterization of a freestanding AIN substrate prepared by hydride vapor phase epitaxy2008
- Author(s)
  Y. Kumagai, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 1512-1514
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-temperature Growth of Nonpolar AIN2008
- Author(s)
  K. Akiyama, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 3434-3437
- NAID
  40016057214
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor phase epitaxy2007
- Author(s)
  H.Murakami, J.Torii, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 387-389
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] A new system for growing thick InN layers by hydride vapor phase epitaxy2007
- Author(s)
  J. Kikuchi, Y. Nishizawa, H. Murakami, Y. Kumagai, A. Koukitu
- Journal Title
  
  Pysica State Solide 4
  
  Pages: 2419-2422
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of AIN crystalline quality with high epitaxial growth ratc by hydridc vapor phase epitaxy2007
- Author(s)
  T. Nagashima, M. Harada, A. Hakomori, H, Yanagi, H. Fukuyama, Y. Kumagai, A. Koukitu, K. Takada
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 355-359
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Theoretical Analysis for Surface Reconstruction of AIN and InN in the Presence of Hydrogen2007
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5112-5115
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen coverage on Si{111} substrate on the growth of GaN buffer layer2007
- Author(s)
  Y. Matsuo, Y. Kangawa Rie Togashi, K. Kakimoto and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 66-69
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Analyses of GaN (0001) and surfaces by highly-charged ions2007
- Author(s)
  K.Motohashi, K. Hosoya, M. Imano, S. Tsurubuchi and A.Koukitu
- Journal Title
  
  Surface Science 601
  
  Pages: 5304-5308
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of AlxGa1-xN ternary alloy using AlCl3 and GaCl2007
- Author(s)
  Akinori Koukitu, Fumitaka Satoh, Takayoshi Yamane, Hisashi Murakami, Yoshinao Kumagai
- Journal Title
  
  J.Cryst.Growth 305
  
  Pages: 335-339
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl_3 using In metal and Cl_22007
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Nishizawa, H.Murakami, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 57-61
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-speed epitaxial growth AIN above 1200 ºC by hydride vapor phase epitaxy2007
- Author(s)
  T. Nagashima, M. Harada, H. yanagi, Y. kumagai, A. Koukitu, K.Takada
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 42-44
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-Principles Calculation and X-ray Absorption Fine Structure Analys is of Fc Doping Mcchanism for Scomi-Inaulating CaN Crowth on GaAs Substrates2007
- Author(s)
  R. Togashi, F. Sato, H. Murakami, J. Iihara, K. Yamaguchi, Y. Kumagai, A. Koukitu
- Journal Title
  
  Pysica State Solide 244
  
  Pages: 1862-1866
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Al- and N-polar AIN laters layers on c-plane sapphire substrates by modified flow-modulation MOCVD2007
- Author(s)
  M. Takeuchi, H. Shimizu, R.Kajitami, K. Kawasaki, T.Kinoshita, K. Takada, H. Murakami, Y.Kumagai, Y. Kumagai, A. Koukitu, T. Koyama, S.F.Chichibue, Y. Aoyagi
- Journal Title
  
  Jpn. J. Appl. Phys. 305
  
  Pages: 360-365
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ GraVimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AIN2007
- Author(s)
  K. Akiyama, T. Araki, H. Murakami, Y. kumagai, and A. koukitu
- Journal Title
  
  Pysica State Solide 4
  
  Pages: 2297-2300
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007
- Author(s)
  Y. Kumagai, J. Kikuchi, Y. Nishizawa, H; Murakami, and A Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 57-61
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] High-speed epitaxial growth of AlN above 1200℃ by hydride vapor phase epitaxy2007
- Author(s)
  T.Nagashima, M.Harada, H.Yanagi, Y.Kumagai, A.Koukitu, K.Takada
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 42-44
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Properties of Fe-dopcd semi-insulating GaN substrates for high-frequency device fabrication2007
- Author(s)
  J.A. Freitas Jr., J.G. Tischler, J.-H. Kim, , Y. Kurnagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 403-407
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Ab initio calculation for the decomposition proces of GaN (0001) and (000-1) surfaces2007
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 1632-1636
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of AlxGal-xN tcrnory alloy using ALCl3 and GaCl2007
- Author(s)
  Akinori Koukitu, Takayoshi Yamane, Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 335-339
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] MOVPE-like HVPE of AIN using solid aluminum trichloride source2007
- Author(s)
  K.Eriguchi, H.Murakami, U.Panyukova, Y.Kumagai, S.Ohira, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 332-335
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Numerical study of the relationship between growth condition and atomic arrangement of InGaN2007
- Author(s)
  Y. Kangawa, K. Kakimoto, T. Ito, A. Koukitu
- Journal Title
  
  Physica status solide(b) 224
  
  Pages: 1784-1788
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007
- Author(s)
  Yoshinao Kumagai, Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Akinori Koukitu
- Journal Title
  
  J.Cryst.Growth 300
  
  Pages: 57-61
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity dependence of AIN {0001} decomposition in flowing H22007
- Author(s)
  Y. Kumagai, K. Akiyama, R. Togashi, H. Murakami, M. Takeuchi, T. Kinoshita, K. Takada, Y. Aoyagi, A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 305
  
  Pages: 366-371
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Influence of hydrogen coverage on Si(111) substrate on the growth of GaN buffer layer2007
- Author(s)
  Y.Matsuo, Y.Kangawa, R.Togashi, K.Kakimoto, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 66-69
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230℃ Using (111)Si as a Starting Substrate2007
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Akinori Koukitu
- Journal Title
  
  Jpn.J.Appl.Phys. 46
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Analysis of compositional instability of InGaN by Monte Carlo simulation2007
- Author(s)
  Y.Kangawa, K.Kakimoto, T.Ito, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 190-192
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thick Al_xGa_<1-x>N ternary alloy by hydride vapor phase epitaxy2007
- Author(s)
  T.Yamane, F.Satoh, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.300
  
  Pages: 164-167
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Growth of thick AlxGal-xN ternary alloy by hydride vapor phase epitaxy2007
- Author(s)
  T. Yamane, F. Satoh, H. Murakami, Y. Kumagai and A. Koukitu
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 164-167
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl_3 and NH_32006
- Author(s)
  Y.Kumagai, K.Takemoto, J.Kikuchi, T.Hasegawa, H.Murakami, A.Koukitu
- Journal Title
  
  physica status solidi (b) Vol.243
  
  Pages: 1431-1435
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates2006
- Author(s)
  Y.Kumagai, F.Satoh, R.Togashi, H.Murakami, K.Takemoto, J.Iihara, K.Yamaguchi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth Vol.296
  
  Pages: 11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis of various types of hydride vapor phase epitaxy systems for high-speed growth of InN2006
- Author(s)
  J.Kikuchi, Y.Nishizawa, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45
- NAID
  10018632545
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Al_x Ga_<1-x>N2006
- Author(s)
  H.Murakami, J.Kikuchi, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) Vol.3
  
  Pages: 1457-1460
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Thermodynamic analysis of AlGaN HYPE2005
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth 5月(in press)
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of AlGaN HVPE2005
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] ハイドライド気相成長法によるAl系窒化物の高速成長 -AlNのHVPE成長は可能か?-2004
- Author(s)
  熊谷義直, 纐纈明伯
- Journal Title
  
  信学技報 ED2004-121,CPM2004-95,LQE2004-59
  
  Pages: 24-30
- NAID
  110003308838
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large Indium mole fraction2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by hydride vapor phase epitaxy.2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kangawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources2004
- Author(s)
  Y.Kumagai, J.Kkikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by vapor phase epitaxy2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kanagawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (111)A substrate2004
- Author(s)
  H.Murakami, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 268
  
  Pages: 1-7
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (a) 201
  
  Pages: 2846-2849
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources.2004
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content.2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi(a) 201
  
  Pages: 2846-2849
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (111)A substrate.2004
- Author(s)
  H.Murakami, Y.Kangawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 268
  
  Pages: 1-7
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Pulse laser assisted MOVPE for InGaN with high indium content2004
- Author(s)
  N.Kawaguchi, K.Hida, Y.Kanagawa, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (a) 201
  
  Pages: 2846-2849
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of AlGaN HVPE2004
- Author(s)
  A.Koukitu, J.Kikuchi, Y.Kangawa, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Is it possible to grow AlN by hydride vapor phase epitaxy2004
- Author(s)
  Y.Kumagai, H.Shikauchi, J.Kikuchi, T.Yamane, Y.Kangawa, A.Koukitu
- Journal Title
  
  IPAP Conf.Series 4
  
  Pages: 9-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Study of pulse laser assisted metalorganic vapor phase epitaxy of InGaN with large indium mole fraction.2004
- Author(s)
  Y.Kangawa, N.Kawaguchi, K.Hida, Y.Kumagai, A.Koukitu
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10013429957
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic analysis of InN and In_xGa_<1-x>N MOVPE using various nitrogen sources2004
- Author(s)
  Y.Kumagai, J.Kikuchi, Y.Matsuo, Y.Kangawa, K.Tanaka, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 341-347
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] High growth rate HVPE of Al-related nitrides.2004
- Author(s)
  Y.Kumagai, A.Koukitu
- Journal Title
  
  Tushingakkai Gihou ED2004-121,CPM2004-95,LQE2004-59(in Japanese)
  
  Pages: 24-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] InGaN気相成長における気相-固相関係に対する基板拘束の影響2003
- Author(s)
  寒川義裕, 伊藤智徳, 熊谷義直, 纐纈明伯
- Journal Title
  
  日本結晶成長学会誌 30
  
  Pages: 104-110
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth2003
- Author(s)
  Y.Kumagai, T.Yamane, T.Miyaji, H.Murakami, Y.Kangawa, A.Koukitu
- Journal Title
  
  physica status solidi (c) 0
  
  Pages: 2498-2501
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Influence constraint from substrate on relationship between input mole ration and solid composition of InGaN during MBE and MOVPE.2003
- Author(s)
  Y.Kangawa, T.Itho, Y.Kumagai, A.Koukitu
- Journal Title
  
  J.Japanease Association for Crystal Growth(in Japanese) 30
  
  Pages: 104-110
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE.2003
- Author(s)
  Y.Kangawa, T.Ito, Y.Kumagai, A.Koukitu
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 453-457
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE2003
- Author(s)
  Y.Kangawa, T.Ito, Y.Kumagai, A.Koukitu
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 453-457
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] A quantum Approach on a stability of GaAs surface structure.2003
- Author(s)
  Y.Kangawa, T.Itho, K.Shiraishi, T.Ohihachi, A.Koukitu
- Journal Title
  
  Surface Science(in Japanese) 24
  
  Pages: 642-647
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth.2003
- Author(s)
  Y.Kumagai, T.Yamane, T.Miyaji, H.Murakami, Y.Kangawa, A.Koukitu
- Journal Title
  
  Physica status solidi(c) 0
  
  Pages: 2498-2501
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] GaAs表面構造の安定性に対する量子論的アプローチ2003
- Author(s)
  寒川義裕, 伊藤智徳, 白石賢二, 大鉢忠, 纐纈明伯
- Journal Title
  
  表面科学 24
  
  Pages: 642-647
- NAID
  130004486109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Journal Article] A new system for growing thick InN layers by hydride vapor phase epitaxy
- Author(s)
  J.Kikuchi, Y.Nishizawa, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AIN
- Author(s)
  K.Akiyama, T.Araki, H.Murakami, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of crystalline quality for Al- and N-polar AlN layers by modified flow-modulation MOCVD growth
- Author(s)
  M.Takeuchi, H.Shimizu, R.Kajitani, K Kawasaki, T.Kinoshita, K.Takada, H.Murakami, Y.Kumagai, A.Koukitu, Y.Aoyagi
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] First-Principles Calculation and X-ray Absorption Fine Structure Analysis of Fe Doping Mechanism for Semi-Insulating GaN Growth on GaAs Substrates
- Author(s)
  R.Togashi, F.Sato, H.Murakami, J.Iihara, K.Yamaguchi, Y.Kumagai, A.Koukitu
- Journal Title
  
  physica status solidi (c) (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Improvement of AlN crystalline quality with high epitaxial growth rate by hydride vapor phase epitaxy
- Author(s)
  T.Nagashima, M.Harada, A.Hakomori, H, Yanagi, H.Fukuyama, Y.Kumagai, A.Koukitu, K.Takada
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] RF-MBE growth of 2H-AlN templates by using a mode change MEE on Si(111) for HVPE growth
- Author(s)
  T.Ohachi, H.Shimomura, N.Yamabe, T.Yamane, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Polarity dependence of AlN {0001} decomposition in flowing H_2
- Author(s)
  Y.Kumagai, K.Akiyama, R.Togashi, H.Murakami, M.Takeuchi, T.Kinoshita, K.Takada, Y.Aoyagi, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] HVPE growth of Al_xGa_<1-x>N ternary alloy using AlCl_3 and GaCl
- Author(s)
  A.Koukitu, T.Yamane, F.Satoh, H.Murakami, Y.Kumagai
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Journal Article] Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication
- Author(s)
  J.A.Freitas, Jr., J.G Tischler, J-H.Kim, Y.Kumagai, A.Koukitu
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PLANNED-18069004
[Patent] AlGaN気相成長方法及び気相成長装置2004
- Inventor(s)
  纐纈明伯
- Industrial Property Rights Holder
  国立大学法人東京農工大学
- Industrial Property Number
  2004-251810
- Filing Date
  2004-08-31
- Data Source
  KAKENHI-PROJECT-15360004
[Patent] AlGaN気相成長方法および気相成長装置
- Inventor(s)
  纐纈明伯
- Industrial Property Rights Holder
  国立大学法人東京農工大学
- Industrial Property Number
  2004-251810
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360004
[Presentation] Growth of GaN and InGaN thick epitaxial layers by tri-halide vapor phase epitaxy2016
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto and Akinori Koukitu
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Kyoto University, Kyoto, Japan
- Year and Date
  2016-07-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] High-Speed Growth of Thick InGaN Ternary Alloy by Tri-Halide Vapor Phase Epitaxy2016
- Author(s)
  H. Murakami, T. Hirasaki, M. Meguro, Q.-T. Thieu, R. Togashi, Y. Kumagai, B. Monemar, A. Koukitu
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center, Aichi，Japan
- Year and Date
  2016-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Recent Progress in Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN2016
- Author(s)
  Hisashi Murakami, Nao Takekawa, Takahide Hirasaki, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Year and Date
  2016-10-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Dependence of GaN Growth on the Substrates with Various Surface Orientations by Tri-Halide Vapor Phase Epitaxy Using GaCl32016
- Author(s)
  Kenji Iso, Karen Matsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami, and Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
- Year and Date
  2016-10-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] High Temperature Growth of Thick InGaN Layers using Tri-Halide Vapor Phase Epitaxy2016
- Author(s)
  M. Meguro, T. Hirasaki, T. Hasegawa, Q. T.Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
- Organizer
  International Conference on LEDs and their Industrial Applications ’16
- Place of Presentation
  パシフィコ横浜、神奈川県
- Year and Date
  2016-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN Layers2015
- Author(s)
  Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
- Place of Presentation
  Hansol Oak Valley, Wonju, Korea
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] HVPE growth of the group III nitrides2015
- Author(s)
  A. Koukitu, Y. Kumagai, H. Murakami
- Organizer
  14th Akasaki Research Center Symposium
- Place of Presentation
  Akasaki Research Center
- Year and Date
  2015-11-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Thick (10 μm) and High Crystalline Quality InGaN Growth on GaN(000-1) Substrate by Tri-Halide Vapor Phase Epitaxy2015
- Author(s)
  Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX)
- Place of Presentation
  Act City Hamamatsu, Shizuoka, Japan
- Year and Date
  2015-11-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] 第一原理計算と統計力学を用いたIII族窒化物の成長における熱化学データの算出2014
- Author(s)
  竹川直，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] トリハライド気相成長法を用いたr面サファイヤ基板上へのGaN成長2014
- Author(s)
  富樫理恵, 小島千恵，藤田直人，斉藤広伸，村上尚，熊谷義直，纐纈明伯塩野杏奈，竹川直，藤村侑，村上尚，熊谷義直，纐纈明伯
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学, 愛知県
- Year and Date
  2014-07-15
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Estimation of thermochemical data for the growth of group-III nitrides by the combination of first principles and statistical thermodynamic2014
- Author(s)
  Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Theoretical calculation of thermochemical data for the growth of group-III nitrides2014
- Author(s)
  N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-16
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Nitrides by HVPE -current and prospects-2014
- Author(s)
  A. KOUKITU, Y. KUMAGAI and H. MURAKAMI
- Organizer
  International Workshop on Nitride Semiconductors(IWN2014)
- Place of Presentation
  WROCLAW, Poland
- Year and Date
  2014-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] High-Speed Growth of InN over 10 μm/h by a Novel HVPE System2014
- Author(s)
  N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications2014
- Author(s)
  T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Influence of Growth Temperature on InGaN Growth by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  Takahide Hirasaki, Yuta Watanabe, Masato Ishikawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Temperature Dependence of InGaN Growth by Tri-Halide Vapor Phase Epitaxy2014
- Author(s)
  T. Hirasaki, Y. Watanabe, T. Hasegawa, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-16
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] Theoretical investigation of the influence of surface orientation on In-incorporation during InGaN growth using THVPE2014
- Author(s)
  Yu Fujimura, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  33rd Electronic Materials Symposium (EMS-33)
- Place of Presentation
  ラフォーレ修善寺, 静岡県
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] トリハライド気相成長法によるInGaN成長における成長温度の影響2014
- Author(s)
  長谷川智康，平崎貴英，渡辺雄太，村上尚，熊谷義直，纐纈明伯
- Organizer
  応用物理学会第3回結晶工学未来塾（2014）
- Place of Presentation
  学習院大学, 東京都
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-26246018
[Presentation] High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System2014
- Author(s)
  R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Growth of Semi-polar InN Layers on GaAs(311)A and (311)B by MOVPE2014
- Author(s)
  Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
- Organizer
  Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Semi-polar growth of InN on GaAs(11n) substrate by MOVPE2013
- Author(s)
  Hisashi Murakami, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  2013 Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE 法によるAlN 基板作製と260 nm 帯深紫外LED への応用2013
- Author(s)
  熊谷義直, 纐纈明伯
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  京都テルサ, 京都府
- Year and Date
  2013-06-07
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE growth of the group III nitrides for bulk growth -from thermodynamic analysis to crystalgrowth?2013
- Author(s)
  A. Koukitu
- Organizer
  12th Akasaki esearch Center Symposium (Invited)
- Place of Presentation
  Nagoya University
- Year and Date
  2013-02-27
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] Thermodynamic analysis of HVPE -Is it possible to grow InGaN by HVPE?-2013
- Author(s)
  A. Koukitu
- Organizer
  2012 Meijo International Symposium on Nitride Semiconductors (Invited)
- Place of Presentation
  Meijo University
- Year and Date
  2013-02-28
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] Fabrication of DUV-LEDs on AlN Substrates2013
- Author(s)
  T.Kinoshita, T. bata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu, and Z.Sitar
- Organizer
  Conference on LED and Its Industrial Application '13 (LEDIA '13)
- Place of Presentation
  パシフィコ横浜, 神奈川県
- Year and Date
  2013-04-25
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN2013
- Author(s)
  Benjamin E.Gaddy, Zachary A.Bryan, Isaac S.Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, Ramon Collazo and Douglas L.Irving
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Year and Date
  2013-08-26
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates2013
- Author(s)
  T.Kinoshita, T.Obata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu and Z.Sitar
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, D.C., U.S.A.
- Year and Date
  2013-08-26
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 様々なハロゲン化合物を用いたInGaN-HVPE成長の熱力学解析2012
- Author(s)
  平崎貴英、花岡幸史、村上尚、熊谷義直、纐纈明伯
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] GaAs(110)基板上半極性InN成長における水素添加効果2012
- Author(s)
  村上尚、堀田哲郎、富樫理恵、熊谷義直、纐纈明伯
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] MOVPE法によるGaAs(110)上InN成長における水素添加の影響2012
- Author(s)
  堀田哲郎, 末松真友, 竹中佐江, 冨樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Thermodynamic analysis of InGaN-HVPE growth using III-bromides and III-iodides2012
- Author(s)
  T. Hirasaki, H. Murakami, Y. Kumagai and A. Koukitu
- Organizer
  The 4th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hotel St. Petersburg, Russia
- Year and Date
  2012-07-17
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] GaAs(311)A及び(311)B上半極性InNのMOVPE成長2012
- Author(s)
  堀田哲郎、村上尚、熊谷義直、纐纈明伯
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] その場重量測定法を用いたサファイア表面の反応メカニズムの解明2011
- Author(s)
  吉田崇, 冨樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  科学研究費補助金・特定領域研究・公開シンポジウム窒化物光半導体のフロンティア～材料潜在能力の極限発現～
- Place of Presentation
  東京ガーデンパレス
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy2011
- Author(s)
  J.A.Freitas Jr., J.C.Culbertson, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] InN/sapphire(0001)MBEテンプレート上へのInN HVPEにおける成長速度の影響2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] In系窒化物半導体のMOVPE、HVPE成長2011
- Author(s)
  村上尚, 富樫理恵, 稲葉克彦, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス(招待講演)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Measurement of temperature dependent lattice constants of single crystal AlN and various starting substrates for the growth of AlN2011
- Author(s)
  R.Togashi, M.Sakai, T.Nagashima, J.Tajima, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC (0001) substrates by the intentional formation of non c-axis oriented AlN grains2011
- Author(s)
  H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Crack in HVPE grown 2H-AlN films on AlN templates prepared by PA-MBE using AM-MEE2011
- Author(s)
  T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire(0001)テンプレート上AlN HVPE成長における成長速度増加の検討2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Possibility of InGaN HVPE growth with the high growth rate and the wide composition control2011
- Author(s)
  A.Koukitu, K.Hanaoka, H.Murakami, Y.Kumagai
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates2011
- Author(s)
  T.Nagashima, A.Hakomori, T.Shimoda, K.Hironaka, Y.Kubota, T.Kinoshita, R.Yamamoto, H.Yanagi, Y.Kumagai, A.Koukitu, K.Takada
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates2011
- Author(s)
  Rie Togashi, Toru Nagashima, Manabu Harada, Yoshinao Kumagai, Hiroyuki Yanagi, Akinori Koukitu
- Organizer
  5th International Workshop on Crystal Growth Technology (IWCGT-5)
- Place of Presentation
  Berlin-Kopenick, Berlin, Germany
- Year and Date
  2011-06-27
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] GaAs(110)上半極性InN(10-13)成長における窒化及びバッファ層の効果2011
- Author(s)
  趙賢哲, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of Growth Temperature on the Twin Formation of the InN{10-13} on GaAs(110)by Metalorganic Vapor Phase Epitaxy2011
- Author(s)
  Hisashi Murakami, H.-C.Cho, Mayu Suematsu, Katsuhiko Inaba, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  SECC, Glasgow, Scotland
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温下での水素・窒素同時供給によるサファイア基板表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気下熱処理におけるc面サファイア基板表面分解・AlN形成の挙動及びその熱力学解析2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈a明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] サファイア結晶基板の製造技術開発競争2011
- Author(s)
  熊谷義直, 纐纈明伯
- Organizer
  日本学術振興会結晶成長の科学と技術・第161委員会第72回研究会
- Place of Presentation
  東北大学金属材料研究所(招待講演)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] AlN/sapphire(0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
- Author(s)
  添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] MOVPE法による高指数面GaAs(311)A及び(311)B基板上への半極性InN成長2011
- Author(s)
  末松真友, 竹中佐江, 堀田哲郎, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC(0001) substrates by the intentional formation of non c-axis oriented AlN grains2011
- Author(s)
  H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-4
- Place of Presentation
  Koyasan, Wakayama, Japan 招待講演
- Year and Date
  2011-06-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H2 and N22011
- Author(s)
  Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-6
- Place of Presentation
  Koyasan, Wakayama, Japan 招待講演
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] MOVPE法を用いた半極性InN(1013)低温成長への水素添加の影響2011
- Author(s)
  竹中佐江, 末松真友, 堀田哲郎, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)MBEテンプレート上へのInN成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] サファイア基板の水素・窒素混合雰囲気下熱処理による表面分解および・AlN形成の熱力学的検討2011
- Author(s)
  国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第41回結晶成長国内会議(NCCG-41)
- Place of Presentation
  つくば国際会議場
- Year and Date
  2011-11-05
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] a面サファイア表面の反応メカニズムの原子レベルその場測定2011
- Author(s)
  吉田崇, 阿部創平, 土屋正樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H_2 and N_22011
- Author(s)
  Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
- Organizer
  7th International Workshop on Bulk Nitride Semiconductors (IWBNS-7)
- Place of Presentation
  高野山大学(和歌山県)(招待講演)
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPEの熱力学的反応解析とリアクタ設計2011
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 水素・窒素混合雰囲気での高温熱処理によるc面サファイア基板表面分解及びAlN形成2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] MOVPE法によるGaAs(110)上InN{10-13}の成長温度が双晶形成に与える影響2011
- Author(s)
  堀田哲郎, 末松真友, 趙賢哲, 富樫理恵, 稲葉克彦, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性2011
- Author(s)
  猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE法によるInN/sapphire(0001)テンプレート上InN高速成長の検討2011
- Author(s)
  山本翔, 東川義弘, 富樫理恵, 村上尚, 熊谷義直, 山口智弘, 荒木努, 名西やすし, 纐纈明伯
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Influence of GaN substrate polarity on InN growth by hydride vapor phase epitaxy2010
- Author(s)
  R.Togashi, A.Otake, Y.Higashikawa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM) WeB3-3
- Place of Presentation
  Kagawa, Japan 口頭発表
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaAs(110)基板上半極性InNのMOVPE成長2010
- Author(s)
  村上尚, 趙賢哲, 末松真友, 富樫理恵, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study on the influence of surface hydrogen coverage on the initial growth process of AlN(0001) surface2010
- Author(s)
  Hikari Suzuki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Thermodynamic Analysis on HVPE Growth of InGaN Ternary Alloy2010
- Author(s)
  Koshi Hanaoka, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14)
- Place of Presentation
  Beijing, China 基調講演
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温その場X線回折による単結晶AlNの格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による気相成長法におけるGaN(0001)へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 単結晶AlNの格子定数の温度依存性2010
- Author(s)
  酒井美希, 田島純平, 永島徹, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] InGaN三元混晶のHVPE成長に関する熱力学的考察2010
- Author(s)
  花岡幸史, 田口悠嘉, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of nucleation behavior in the initial growth stage on the HVPE growth of InN on sapphire (0001) substrates2010
- Author(s)
  Y.Higashikawa, A.Otake, R.Togashi, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN及びAlN成長用初期基板の格子定数の温度依存性測定2010
- Author(s)
  酒井美希, 永島徹, 田島純平, 富樫理恵, 村上尚, 森岡仁, 山内剣, 斎藤啓介, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(招待講演)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14) DK1
- Place of Presentation
  Beijing, China 招待講演
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 非c軸配向AlNグレインを利用した6H-SiC(0001)基板上AlNのSelf-ELO2010
- Author(s)
  関口修平, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010) A1.8
- Place of Presentation
  Tampa, FL, U.S.A. 口頭発表
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長におけるNH_3供給分圧変調効果2010
- Author(s)
  東川義弘, 大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaN自立基板上InNハイドライド気相成長における基板極性の影響2010
- Author(s)
  富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effects of growth temperature on the crystal orientation of InN on GaAs(110) by metalorganic vapor phase epitaxy2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaCl_3を用いたGaNのHVPE成長2010
- Author(s)
  山根貴好, 花岡幸史, 近藤秀昭, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE Growth of Nitrides2010
- Author(s)
  纐纈明伯, 熊谷義直
- Organizer
  Growth of Bulk Nitrides
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-01-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of Hydrogen Gas on the Growth of Semi-polar InN2010
- Author(s)
  Hyunchol Cho, Mayu Suematsu, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による窒化物表面へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高温熱処理によるc面sapphire基板表面の窒化2010
- Author(s)
  猪木孝洋, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Two-Step Growth of (0001) ZnO Single Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy2010
- Author(s)
  Rui Masuda, Rie Togashi, Hisashi Murakami Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] First-principle Study on the Effect of Surface Hydrogen Coverage on the Adsorption Process of Ammonia on the InN(0001) Surfaces2010
- Author(s)
  Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of Semi-Polar InN Layer on GaAs(110) Surface by MOVPE2010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Mayu Suematsu, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride vapor-phase epitaxy of GaN using GaCl_32010
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハライド気相成長法によるc面sapphire基板上ZnO二段階成長2010
- Author(s)
  篠塚俊克, 増田塁, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハライド気相成長法を用いたsapphire(0001)基板上ZnO二段階成長2010
- Author(s)
  篠塚俊克, 増田塁, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長におけるキャリアガスの影響2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2010 (IWN2010)
- Place of Presentation
  Florida (USA)
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハイドライド気相成長法によるGaN自立基板上InN成長の極性依存性2010
- Author(s)
  富樫理恵, 足立裕和, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] a面sapphire基板上c面AlN HVPE成長における面内配向性の制御2010
- Author(s)
  田島純平, 越前史, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算によるAlN(0001)表面へのV族原料吸着過程の解析2010
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 窒化物半導体のHVPE成長-表面反応解析から結晶成長へ-2010
- Author(s)
  纐纈明伯, 村上尚, 熊谷義直
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)(基調講演)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] サファイア(0001)基板上InN HVPE成長における成長初期核制御の効果2010
- Author(s)
  東川義弘, 大竹斐, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] r面sapphire基板上a面AlN HVPE成長初期過程におけるキャリアガスの影響2010
- Author(s)
  田島純平, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(三重県)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 水素・窒素混合雰囲気における高温熱処理がc面sapphire基板表面に与える影響2010
- Author(s)
  猪木孝洋, 石附正成, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Lattice constants of AlN in the range 25-1600℃ investigated by using a quasi-bulk crystal grown by hydride vapor phase epitaxy2010
- Author(s)
  Yoshinao Kumagai, Miki Sakai, Jumpei Tajima, Toru Nagashima, Rie Togashi, Hisashi Murakami, Hitoshi Morioka, Tsutomu Yamauchi, Keisuke Saito, Kazuya Takada Akinori Koukitu
- Organizer
  The 37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(基調講演)
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Tri-halide vapor-phase epitaxy of GaN2010
- Author(s)
  Takayoshi Yamane, Hisashi Murakami, Koshi Hanaoka, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effect of High NH_3 Input Partial Pressure on HVPE of InN on (0001) Sapphire Substrates2010
- Author(s)
  Rie Togashi, Aya Otake, Yoshihiro Higashikawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-08-12
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Carrier Gas Dependence of a-Plane AlN Layer Growth on r-Plane Sapphire Substrates at Initial Stage by Hydride Vapor Phase Epitaxy2010
- Author(s)
  Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Temperature dependence of the lattice constants of single crystal AlN2010
- Author(s)
  M.Sakai, J.Tajima, T.Nagashima, R.Togashi, H.Murakami, H.Morioka, T.Yamauchi, K.Saito, Y.Kumagai, K.Takada, A.Koukitu
- Organizer
  29th Electronic Materials Symposium (EMS-29)
- Place of Presentation
  ラフォーレ修善寺(静岡)
- Year and Date
  2010-07-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN-HVPE成長のための原料探索-熱力学解析-2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE2009
- Author(s)
  熊谷義直, 江夏悠貴, 石附正成, 富樫理恵, 田島純平, 村上尚, 高田和哉, 纐纈明伯
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] XPSを用いたGaN結晶の表面改質評価2009
- Author(s)
  野口和之, 野崎理, 渡邉謙二, 纐纈明伯, 熊谷義直, 本田徹
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)の分解過程の解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphke(0001)基板上InN HVPE成長における成長温度依存性2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Control of indium composition in coherently grown InGaN thin films2009
- Author(s)
  屋山巴, 寒川義裕, 柿本浩一, 纐纈明伯
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Si汚染の低減を目指したAlN-HVPE成長のための原料探索2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical investigation of the decomposition mechanism of AlN(0001)surface under a hydrogen atmosphere2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE AlN厚膜自発分離の最適化に向けたAlN/sapphire(0001)界面ボイドの拡張制御2009
- Author(s)
  江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 高品位厚膜InGaN三元混晶成長の検討2009
- Author(s)
  纐纈明伯
- Organizer
  東北大プロジェクト研究会プログラム
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2009-10-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Spontaneous polarization effects in XPS spectra of GaN2009
- Author(s)
  野口和之, 野崎理, 渡邉謙二, 纐纈明伯, 熊谷義直, 本田徹
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 熱力学解析による化合物半導体の気相成長2009
- Author(s)
  纐纈明伯, 熊谷義直
- Organizer
  ワイドギャップ半導体の結晶成長技術-高度環境・エネルギー社会に向けて-
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2009-11-18
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 熱力学解析によるAlN-HVPE成長のための原料探索-Si汚染の低減を目指して-2009
- Author(s)
  田口悠嘉, 鈴木ひかり, 熊谷義直, 纐纈明伯
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法を用いたsapphire(0001)基板上InN成長における成長温度の影響2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 水素雰囲気下におけるAlN(0001)面の分解過程の理論解析2009
- Author(s)
  鈴木ひかり, ウリアナ・パニュコワ, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire界面ボイドの形成制御により自発分離したAlN自立基板の特性2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第39回結晶成長国内会議(NCCG-39)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2009-11-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Temperature dependence of InN growth on(0001)sapphire substrates by atmospheric pressure hydride vapor phase epitaxy2009
- Author(s)
  熊谷義直, 足立裕和大竹斐, 東川義弘, 富樫理恵, 村上尚, 纐纈明伯
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 成長モード制御によるMOVPE-InNの高品質化の検討2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Selective growth of InN on patterned GaAs(111)B substrate-Influence of InN decomposition at the interface-2009
- Author(s)
  Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of source precursor for AlN-HVPE to decrease Si-contamination2009
- Author(s)
  纐纈明伯, 田口悠嘉, 鈴木ひかり, 村上尚, 熊谷義直
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-25
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] ハイドライド気相成長法によるsapphire(0001)基板上InN成長の成長温度依存性2009
- Author(s)
  大竹斐, 足立裕和, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] XPS spectra of(0001)and(000-1)GaN surfaces2009
- Author(s)
  Kazuyuki Noguchi, Tadashi Nozaki, Naoyuki Sakai, Yoshinao Kumagai, Akinori Koukitu, Tohru Honda
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  ICC Jeju, Korea
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] sapphire(0001)基板上HVPE AlN厚膜自発分離のための界面ボイド拡張制御2009
- Author(s)
  江夏悠貴, 久保田有紀, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学(茨城県)
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] AlN/sapphire界面ボイドの形成を利用したfreestanding AlN基板の作製2009
- Author(s)
  内田健悟, 江夏悠貴, 石附正成, 田島純平, 富樫理恵, 村上尚, 熊谷義直, 高田和哉, 纐纈明伯
- Organizer
  応用物理学会結晶工学分科会2009年年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Two step growth of InN layer on SiO_2 patterned GaAs(111)B2009
- Author(s)
  趙賢哲, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第28回電子材料シンポジウム(EMS-28)
- Place of Presentation
  ラフォーレ琵琶湖(滋賀県)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 気相成長法におけるGaN(0001)の成長初期過程の理論解析2009
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Growth of 2H-AlN films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth2009
- Author(s)
  T.Ohachi, N.Yamabe, K.Ohkusa, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  6th International Workshop on Bulk Nitride Semiconductors(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-24
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Preparation of a crack-free AIN template layer on sapphire substrate by hydride vapor phase epitaxy at 1450℃2008
- Author(s)
  J. Tajima, H. Murakami, Y. Kumagai, K. Takada, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Ab Initio Calculation for an Initial Growth Process of GaN on (0001) and (000-1) Surfaces by Vapor Phase2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Controlled Formation of Voids at the AIN and Sapphire Interface by the Sapphire Decomposition for Self-Separation of AIN Layers2008
- Author(s)
  J. Tajima, Y. Kubota, M. Ishizuki, T. Nagashima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere2008
- Author(s)
  H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Investigation of Polarity Dependent InN{0001} Decomposition in N_2 and H_2 Ambient2008
- Author(s)
  R. Togashi, H. Adachi, T. Kamoshita, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 20089
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Progress in Preparation of Freestanding AIN Substrates by Hydride Vapor Phase Epitaxy2008
- Author(s)
  Y. Kumagai, J. Tajima, Y Kubota, M. Ishizuki, R. Togashi, H. Murakami, T. Nagashima, K. Takada, A. Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Improvements in crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure2008
- Author(s)
  H. Murakami, H.-C. Cho, Y. Kumagai, A. Koukitu
- Organizer
  14th International Conference of Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ gravimetric monitoring of surface reactions between sapphire and NH_<3>2008
- Author(s)
  K. Akiyama, Y. Ishii, H. Murakami, Y., Kumagai, A. Koukitu
- Organizer
  2nd International Symposium on Growth of III-Nitrides
- Place of Presentation
  ラフォーレ修善寺, 伊豆, 静岡
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situグラヴィメトリック法によるNH3雰囲気下(ooo1)c面サファイア表面反応メカニズム2008
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  千葉県、日本大学
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Progress in Preparation of Freestanding AlN Substrates by Hydride Vapor Phase Epitaxy2008
- Author(s)
  Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008) We2b-C1
- Place of Presentation
  Montreux Music and Convention Center, Montreux, Switzerland 招待講演
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Characterization of a Freestanding AIN Substrate Prepared by Hydride Vapor Phase Epitaxy2007
- Author(s)
  Yoshinao Kumagai, Toru Nagashima, Hisashi Murakami. Kazuya Takada, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Hydride Vapor phase epitaxy of Al_xGa<1_x>N layers on GaN substrates2007
- Author(s)
  Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] in situ グラヴィメトリック法によるNH3雰囲気下(0001)c面サファイア分解速度の測定2007
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of AlN decomposition processes in hydrogen atmosphere2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Polarity Control of 2H-AIN templates on Si (111) grown by RF-MBE using a mode change MEE for HVPE growth2007
- Author(s)
  T. Ohachi, H. Shimomura, N. Yamabe, K. Oride, H. Murakami, Y. Kumagai, and A. Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Groth of thin Protective AIN Layers on Sapphire Substrates at 1065℃ for Hydride Vapor Phase Epitaxy of AIN above 1300℃2007
- Author(s)
  Junpei Tajima, Yuki Kubota, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (10-12)r-plane Sapphire for the High Temperature Growth of non-polar AIN2007
- Author(s)
  Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Influence of hydrogen inputpartial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy2007
- Author(s)
  Hisashi MURAKAMI, Jun-ichi TORII, Yoshinao KUMAGAI and Akinori KOUKITU
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] si(111)基板を初期基板に用いたHvPE法によるAIN自立基板の作製2007
- Author(s)
  熊谷義直, 永嶋徹, 村上尚, 高田和哉, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 様々な雰囲気下におけるN極性lnN分解の温度依存性2007
- Author(s)
  富樫理恵, 鴨下朋樹, 西澤雄樹, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるsapphire基板上AIN高温成長における中間層導入の効果2007
- Author(s)
  田島純平, 久保田有紀, 永嶋徹, 樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] NH_3雰囲気下(0001)c面サファイア表面反応過程のグラヴィメトリック法によるその場測定2007
- Author(s)
  秋山和博, 石井泰寛, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] High Temperature Growth of High-Quality AIN by Sohd-Source HVPE2007
- Author(s)
  Ken-ichi Eriguchi, Hisashi Murakami, Uliana Panyukova, Yoshinao Kumagai, Shigeo Ohira, Akinori Koukitu
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)および(000-1)面の分解過程の解析2007
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 第一原理計算による水素雰囲気下におけるGaN(0001)および(000-1)面の分解過程の解析2007
- Author(s)
  鈴木ひかり, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Experimental and Ab-Initio Studies of Temperature Dependent InN Decomposition in Various Ambient2007
- Author(s)
  Rie Togashi, Tomoki Kamoshita, Yuuki Nishizawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Nevada, Lasvegas, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Decomposition Rate on the Surface of (10-12)r-plane Sapphire Monitored by in situ Gravimetric Monitoring Method for the High Temperature Growth of non-polar AIN2007
- Author(s)
  Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるGaN基板上高品質Al_XGa_<1-x>N成長2007
- Author(s)
  村上尚, 佐藤史隆, 秋山和博, 武藤弘, 柴田克幸, 山下宗修, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Ab initio calculation of decomposition GaN (0001) and (000-1) Surfaces2007
- Author(s)
  Hikari Suzuki, Rie Togashi, His ashi Murakami, Yoshinao Kumagai and Akinori Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of the decomposition of AIN in a hydrogen atmospher2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] In situグラヴィメトリック法によるNH_3雰囲気下(ooo1)c面サファイア表面反応メカニズム2007
- Author(s)
  秋山和博, 石井泰寛, 村上谷義直, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Polarity-dependent growth of InN on Ga-and N-polar GaN surfaces byhydride vapor phase epitaxy2007
- Author(s)
  Y. Kumagai, R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, A. Koukitu
- Organizer
  5th Intemational Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  Bahia, Brazil
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Effect of hydrogen partial pressure on the growth of InN layers on GaAs (111)A surfaces by metalorganic vapor phase epitaxy2007
- Author(s)
  Hisashi MURAKAMI, Hyun-Chol CH0, Yoshinao KUMAGAI and Akinori KOUKITU
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  滋賀県、ラフォーレ琵琶湖
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] GaN{0001}基板を用いたInNHVPE成長における極性制御2007
- Author(s)
  鴨下朋樹, 西澤雄樹, 富樫理恵, 村上尚, 熊谷義直, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE growth of AIN and AIGaN2007
- Author(s)
  Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-08-16
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 固体AICI_3を用いた光加熱HVPEによるAINの高温成長2007
- Author(s)
  江里口健一, 平塚貴子, 村上尚, 熊谷義直, 大平重男, 纐纈明伯
- Organizer
  結晶工学分科会2007年年末講演会
- Place of Presentation
  東京、学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE法によるSi-doped AlN成長の検討2007
- Author(s)
  久保田有紀, 田島純平, 永嶋徹, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] Theoretical study of AIN decomposition processes in hydrogen atmosphere2007
- Author(s)
  U. Panyukova, H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
- Organizer
  15th International Conference on Crystal Growth
- Place of Presentation
  Utah, USA
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] 原料分子制御HVPE法によるAIN,AIGaNおよびlnN成長2007
- Author(s)
  纐纈明伯, 熊谷義直, 村上尚
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道、北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069004
[Presentation] HVPE growth of the group III nitrides for bulk growth - from thermodynamic analysis to crystal growth -
- Author(s)
  A. Koukitu
- Organizer
  12th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya University, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] Thermodynamic analysis of HVPE -Is it possible to grow InGaN by HVPE?-
- Author(s)
  A. Koukitu
- Organizer
  2012 Meijo International Symposium on Nitride Semiconductors (MSN2012)
- Place of Presentation
  Meijo University, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23360008
[Presentation] HVPE growth of the group III nitrides for bulk growth - from thermodynamic analysis to crystal growth -
- Author(s)
  A. Koukitu
- Organizer
  12th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya University, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24656011
[Presentation] Thermodynamic analysis of HVPE -Is it possible to grow InGaN by HVPE?-
- Author(s)
  A. Koukitu
- Organizer
  2012 Meijo International Symposium on Nitride Semiconductors (MSN2012)
- Place of Presentation
  Meijo University, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24656011

1. SEKI Hisashi (70015022)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
2. KUMAGA Yoshinao (20313306)

# of Collaborated Projects: 4 results

# of Collaborated Products: 251 results
3. MURAKAMI Hajime (90401455)

# of Collaborated Projects: 3 results

# of Collaborated Products: 237 results
4. TAKAHASHI Naoyuki (50242243)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. HAGIWARA Yoichi (40218392)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. KANGAWA Yoshinao (90327320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 24 results
7. 桑野範之 (50038022)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 田中信夫 (40126876)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 森博太郎 (10024366)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 進藤大輔 (20154396)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 尾鍋研太郎 (50204227)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. TOGASHI Rie

# of Collaborated Projects: 1 results

# of Collaborated Products: 23 results
13. ITO Tomonori

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

KOUKITU Akinori 纐纈 明伯

Research Projects

Research Products

Co-Researchers

Thick and high quarity InGaN growth by THVPEPrincipal Investigator

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Is it possible to grow InGaN ternary alloy by HVPE?Principal Investigator

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New Growth Method for Bulk GaN using molecule-controlling methodPrincipal Investigator

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Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursorsPrincipal Investigator

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Review Section

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電子プローブによる光・電子デバイス材料および実装素子のナノ組織解析技術の進展

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Thick Epitaxy of AlN and AlGaN with controlling source molecules and nano-crystal field.Principal Investigator

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Thermodynamic interactive database for vapor phase epitaxy using internetPrincipal Investigator

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Thermodynamic analysis system for vapor phase epitaxy by using internetPrincipal Investigator

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In situ Monitoring of Surface Reaction of III Nitrides Using Gravimetric and Optical Monitoring Methods

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In situ Monitoring of Atomic Level Reaction on GaAs Surface Using Gravimetric and Optical Monitoring MethodsPrincipal Investigator

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表面再構成構造のマイクロバランスおよび光を用いたその場測定Principal Investigator

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In situ gravimetric monitoring of atomic layr epitaxy usingPrincipal Investigator

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化合物半導体ALE成長プロセスのその場観察Principal Investigator

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KOUKITU Akinori 纐纈明伯

[Book] 熱力学解析による化合物半導体の気相成長第79巻,第11号2009