Kosugi Ryouji 小杉亮治

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KOSUGI Ryouji 小杉亮治

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Researcher Number	10356991
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 総括研究主幹
Affiliation (based on the past Project Information) *help	2022 – 2024: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 上級主任研究員 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究員 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 2013 – 2014: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員
Review Section/Research Field	Except Principal Investigator Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics / Thin film/Surface and interfacial physical properties
Keywords	Except Principal Investigator 検出器 / 放射線耐性 / ダイヤモンド / シリコンカーバイド / 荷電粒子検出器 / ピクセル検出器 / ワイドギャップ半導体 / ミューオン・電子転換過程 / ASIC / SiC … More / 半導体検出器 / 移動度劣化 / しきい値シフト / 界面水素 / チャネルドーピング / 界面窒素 / EDMR / ESR / しきい値電圧 / MOS界面 / 電流検出ESR法 / ESR法 / 電界効果トランジスタ / 界面欠陥 / 酸化膜界面 / 炭化ケイ素 / 閾値変動 / チャネル移動度 / 電子スピン共鳴分光 / 界面準位 / MOSFET / 4H-SiC / パワーエレクトロニクス Less

Development of SiC Detectors for the COMET Experiment
- Principal Investigator
  
  岸下徹一
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics
- Research Institution
  High Energy Accelerator Research Organization
Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation
- Principal Investigator
  
  Fujinoki Takahide
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba

All 2023 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor2023
- Author(s)
  Kishishita Tetsuichi、Kosugi Ryoji、Fujita Yowichi、Fukao Yoshinori、Kojima Kazutoshi、Masumoto Keiko、Nishiguchi Hajime、Tanaka Manobu M.、Tanaka Yasunori
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: - Issue: 6 Pages: 1-1
- DOI
  10.1109/tns.2023.3265318
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K22526
[Journal Article] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2014
- Author(s)
  R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata, T. Yatsuo, Y. Tanaka, H. Okumura
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 845-850
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 414-417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] SiC MOS interface states: difference between Si face and C face2013
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Pages: 55-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013
- Author(s)
  梅田享英, 岡本光央, 小杉亮治, 原田信介, 荒井亮, 佐藤嘉洋, 牧野高紘, 大島武, 奥村元
- Journal Title
  
  シリコンテクノロジー（応用物理学会分科会）
  
  Volume: 161 Pages: 98-102
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英、阿部裕太、Y.-W. Zhu、岡本光央、小杉亮治、原田信介、春山盛善、小野田忍、大島武
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016
- Author(s)
  梅田享英、鹿児山陽平、奥田貴史、須田淳、木本暢恒、小杉亮治、岡本光央、原田信介
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015
- Author(s)
  T. Umeda, R. Arai, M. Okamoto, R. Kosugi, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2013
- Author(s)
  R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata, T. Yatsuo, Y. Tanaka, H. Okumura
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance
- Author(s)
  T. Umeda, Y. Sato, R. Kosugi, M. Okamoto), S. Harada, H. Okumura
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定
- Author(s)
  鹿児山陽平、岡本光央、小杉亮治、原田信介、牧野高紘、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Defects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance
- Author(s)
  Y. Kagoyama, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, T. Makino, T. Ohshima
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC中の空孔欠陥と水素の反応と、水素複合欠陥のESR評価
- Author(s)
  棚井創基、村上功樹、奥田貴史、須田淳、木本恒暢、小杉亮治、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 電流検出ESRによる C面4H-SiC MOSFET界面欠陥からの水素脱離の観察
- Author(s)
  荒井亮、梅田享英、佐藤嘉洋、岡本光央、原田信介、小杉亮治、奥村元、牧野高紘、大島武
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学、京都府
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] SiC MOS interface states: difference between Si face and C face
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOS界面窒化処理における窒素ドーピングのESR定量
- Author(s)
  梅田享英、佐藤嘉洋、佐久間由貴、小杉亮治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286054

1. Fujinoki Takahide (10361354)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. OKAMOTO Mitsuo (60450665)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
3. HARADA Shinsuke (20392649)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
4. 岸下徹一 (80789165)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
5. 深尾祥紀 (80443018)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. 梅田享英

# of Collaborated Projects: 0 results

# of Collaborated Products: 14 results

Kosugi Ryouji 小杉 亮治

KOSUGI Ryouji 小杉 亮治

Research Projects

Research Products

Co-Researchers

Development of SiC Detectors for the COMET Experiment

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2014

Author(s)

Journal Title

Data Source

[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014

Author(s)

Journal Title

Data Source

[Journal Article] SiC MOS interface states: difference between Si face and C face2013

Author(s)

Journal Title

Data Source

[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013

Author(s)

Journal Title

Data Source

[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Defects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 4H-SiC中の空孔欠陥と水素の反応と、水素複合欠陥のESR評価

Kosugi Ryouji 小杉亮治

KOSUGI Ryouji 小杉亮治