Kosugi Ryouji 小杉亮治

… Alternative Names

KOSUGI Ryouji 小杉亮治

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Researcher Number	10356991
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 総括研究主幹
Affiliation (based on the past Project Information) *help	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 総括研究主幹 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 総括研究主幹 2022 – 2024: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 上級主任研究員 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究員 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 2013 – 2014: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員
Review Section/Research Field	Except Principal Investigator Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics / Basic Section 28040:Nanobioscience-related / Thin film/Surface and interfacial physical properties
Keywords	Except Principal Investigator 水素結合 / 半導体 / 核酸 / 蛍光相関分光法 / サブテラヘルツ / 検出器 / 放射線耐性 / ダイヤモンド / シリコンカーバイド / 荷電粒子検出器 … More / ピクセル検出器 / ワイドギャップ半導体 / ミューオン・電子転換過程 / ASIC / SiC / 半導体検出器 / 移動度劣化 / しきい値シフト / 界面水素 / チャネルドーピング / 界面窒素 / EDMR / ESR / しきい値電圧 / MOS界面 / 電流検出ESR法 / ESR法 / 電界効果トランジスタ / 界面欠陥 / 酸化膜界面 / 炭化ケイ素 / 閾値変動 / チャネル移動度 / 電子スピン共鳴分光 / 界面準位 / MOSFET / 4H-SiC / パワーエレクトロニクス Less

Sub-THz波によるDNA塩基対の組み替え:sub-THz光源開発と蛍光相関分光法による直接検証
- Principal Investigator
  
  山本条太郎
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 28040:Nanobioscience-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
不安定核実験への応用を目的とした低ゲイン増幅型シリコンカーバイド検出器の開発
- Principal Investigator
  
  岸下徹一
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics
- Research Institution
  High Energy Accelerator Research Organization
Development of SiC Detectors for the COMET Experiment
- Principal Investigator
  
  岸下徹一
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics
- Research Institution
  High Energy Accelerator Research Organization
Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation
- Principal Investigator
  
  Fujinoki Takahide
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba

All 2023 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor2023
- Author(s)
  Kishishita Tetsuichi、Kosugi Ryoji、Fujita Yowichi、Fukao Yoshinori、Kojima Kazutoshi、Masumoto Keiko、Nishiguchi Hajime、Tanaka Manobu M.、Tanaka Yasunori
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: - Issue: 6 Pages: 1-1
- DOI
  10.1109/tns.2023.3265318
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K22526
[Journal Article] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2014
- Author(s)
  R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata, T. Yatsuo, Y. Tanaka, H. Okumura
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 845-850
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 414-417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] SiC MOS interface states: difference between Si face and C face2013
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Pages: 55-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013
- Author(s)
  梅田享英, 岡本光央, 小杉亮治, 原田信介, 荒井亮, 佐藤嘉洋, 牧野高紘, 大島武, 奥村元
- Journal Title
  
  シリコンテクノロジー（応用物理学会分科会）
  
  Volume: 161 Pages: 98-102
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英、阿部裕太、Y.-W. Zhu、岡本光央、小杉亮治、原田信介、春山盛善、小野田忍、大島武
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016
- Author(s)
  梅田享英、鹿児山陽平、奥田貴史、須田淳、木本暢恒、小杉亮治、岡本光央、原田信介
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015
- Author(s)
  T. Umeda, R. Arai, M. Okamoto, R. Kosugi, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2013
- Author(s)
  R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata, T. Yatsuo, Y. Tanaka, H. Okumura
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance
- Author(s)
  T. Umeda, Y. Sato, R. Kosugi, M. Okamoto), S. Harada, H. Okumura
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定
- Author(s)
  鹿児山陽平、岡本光央、小杉亮治、原田信介、牧野高紘、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Defects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance
- Author(s)
  Y. Kagoyama, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, T. Makino, T. Ohshima
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC中の空孔欠陥と水素の反応と、水素複合欠陥のESR評価
- Author(s)
  棚井創基、村上功樹、奥田貴史、須田淳、木本恒暢、小杉亮治、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 電流検出ESRによる C面4H-SiC MOSFET界面欠陥からの水素脱離の観察
- Author(s)
  荒井亮、梅田享英、佐藤嘉洋、岡本光央、原田信介、小杉亮治、奥村元、牧野高紘、大島武
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学、京都府
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] SiC MOS interface states: difference between Si face and C face
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOS界面窒化処理における窒素ドーピングのESR定量
- Author(s)
  梅田享英、佐藤嘉洋、佐久間由貴、小杉亮治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286054

1. 岸下徹一 (80789165)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
2. Fujinoki Takahide (10361354)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. OKAMOTO Mitsuo (60450665)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
4. HARADA Shinsuke (20392649)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
5. 深尾祥紀 (80443018)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. 山本条太郎 (20585088)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 今清水正彦 (90465930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 北村徳隆 (40979043)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 梅田享英

# of Collaborated Projects: 0 results

# of Collaborated Products: 14 results

Kosugi Ryouji 小杉 亮治

KOSUGI Ryouji 小杉 亮治

Research Projects

Research Products

Co-Researchers

Sub-THz波によるDNA塩基対の組み替え:sub-THz光源開発と蛍光相関分光法による直接検証

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

不安定核実験への応用を目的とした低ゲイン増幅型シリコンカーバイド検出器の開発

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of SiC Detectors for the COMET Experiment

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2014

Author(s)

Journal Title

Data Source

[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014

Author(s)

Journal Title

Data Source

[Journal Article] SiC MOS interface states: difference between Si face and C face2013

Author(s)

Journal Title

Data Source

[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013

Author(s)

Journal Title

Data Source

[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Development of SiC super-junction (SJ) devices by multi-epitaxial growth2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定

Kosugi Ryouji 小杉亮治

KOSUGI Ryouji 小杉亮治