Harada Shinsuke 原田信介

… Alternative Names

原田信介ハラダシンスケ

HARADA Shinsuke 原田信介

Less

Researcher Number	20392649
Other IDs
Affiliation (Current)	2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長
Affiliation (based on the past Project Information) *help	2019 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長 2017: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, グループリーダー 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究チーム長 2014: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究チーム長 2013: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究員
Review Section/Research Field	Except Principal Investigator Thin film/Surface and interfacial physical properties / Basic Section 21010:Power engineering-related / Medium-sized Section 29:Applied condensed matter physics and related fields
Keywords	Except Principal Investigator 4H-SiC / MOSFET / 電子スピン共鳴分光 / 炭化ケイ素 / MOS界面 / パワーエレクトロニクス / 界面準位 / 閾値変動 / 界面欠陥 / ESR … More / 移動度劣化 / ワイドギャップ半導体 / 窒化ガリウム / 電子スピン共鳴 / 第一原理計算 / GaN / MOS界面欠陥 / チャネル移動度 / 酸化膜界面 / 電界効果トランジスタ / ESR法 / 電流検出ESR法 / しきい値電圧 / EDMR / 界面窒素 / チャネルドーピング / 界面水素 / しきい値シフト / ダングリングボンド / SiC / SiC MOSFET / 高信頼性特性 / 負荷短絡 / 機械応力 / 残留ダメージ / 負荷短絡破壊 / 電気－熱－応力連成解析 / TCADシミュレーション / アルミ電極と銅電極 / 引っ張り応力、せん断応力 / SiC/SiO2界面 / 電流検出 / 電流検出型電子スピン共鳴 / スピン欠陥 / ダイヤモンド / BVセンター / PbCセンター / 炭素ダングリングボンド / IV族系半導体 Less

Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETs
- Principal Investigator
  
  岩室憲幸
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  University of Tsukuba
ワイドギャップ半導体MOS界面欠陥の正体の横断的解明
- Principal Investigator
  
  藤ノ木享英 (梅田享英)
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  University of Tsukuba
Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfaces
- Principal Investigator
  
  Umeda Takahide
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation
- Principal Investigator
  
  Fujinoki Takahide
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs2022
- Author(s)
 Y. Abe, A. Chaen, M. Sometani, S. Harada, Y. Yamazaki, T. Ohshima, T. Umeda
- Journal Title
 
 Applied Physics Letters
 
 Volume: 120 Pages: 064001-064001
- DOI
 10.1063/5.0078189
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-20H00340, KAKENHI-PROJECT-20J15088
[Journal Article] Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 )/ SiO2 interfaces with wet oxidation2020
- Author(s)
  T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, S. Harada, T. Hatakeyama
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Pages: 151602-151602
- DOI
  10.1063/1.5116170
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces2020
- Author(s)
  E. Higa, M. Sometani, H. Hirai, H. Yano, S. Harada, T. Umeda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Pages: 171602-171602
- DOI
  10.1063/5.0002944
- NAID
  120007132633
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface2020
- Author(s)
  Umeda T.、Kobayashi T.、Sometani M.、Yano H.、Matsushita Y.、Harada S.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Pages: 071604-071604
- DOI
  10.1063/1.5143555
- NAID
  120007003559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-17H02781
[Journal Article] Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4HSiC(0001)/SiO2 interfaces2020
- Author(s)
  T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 127 Pages: 145301-145301
- DOI
  10.1063/1.5134648
- NAID
  120007132646
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Anomalous carbon clusters in 4H-SiC/SiO2 interfaces2019
- Author(s)
  Y. Kagoyama, M. Okamoto, T. Yamasaki, N. Tajima, J. Nara, T. Ohno, H. Yano, S. Harada, and T. Umeda
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 125 Pages: 065302-065302
- DOI
  10.1063/1.5066356
- NAID
  120007133646
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03830, KAKENHI-PROJECT-17H02781
[Journal Article] Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy2018
- Author(s)
  T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, S. Harada
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Pages: 061605-061605
- DOI
  10.1063/1.5041059
- NAID
  120007127942
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors2018
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112
- DOI
  10.1063/1.4994241
- NAID
  120007133812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-17H02781
[Journal Article] Interface defects in C-face 4H-SiC MOSFETs: An electrically-detected-magnetic-resonance study2017
- Author(s)
  T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
- Journal Title
  
  ECS Transactions
  
  Volume: 80 Pages: 147-153
- DOI
  10.1149/08001.0147ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements2017
- Author(s)
 T. Hatakeyama, Y. Kiuchi, M. Sometani, S. Harada, D. Okamoto, H. Yano, Y. Yonezawa, H. Okumura
- Journal Title
 
 Applied Physics Express
 
 Volume: 10 Issue: 4 Pages: 046601-046601
- DOI
 10.7567/apex.10.046601
- NAID
 210000135827
- ISSN
 1882-0778, 1882-0786
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-17H02781
[Journal Article] Evaluation of Schottky barrier height on 4H-SiC m-face $\{ 1\bar{1}00\} $ for Schottky barrier diode wall integrated trench MOSFET2017
- Author(s)
 Y. Kobayashi, H. Ishimori, A. Kinoshita, T. Kojima, M. Takei, H. Kimura, S. Harada
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 56 Issue: 4S Pages: 04CR08-04CR08
- DOI
 10.7567/jjap.56.04cr08
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-17H02781
[Journal Article] Improvement of channel mobility in 4H-SiC C-face MOSFETs by H2 rich wet re-oxidation2014
- Author(s)
  M. Okamoto, Y. Makibuchi, M. Araoka, M. Miyazato, N. Sugahara, T. Tsutsumi, Y. Ohnishi, H. Kimura, S. Harada, K. Fukuda, A. Ohtsuki, H. Okumura
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 975-978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 414-417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013
- Author(s)
  梅田享英, 岡本光央, 小杉亮治, 原田信介, 荒井亮, 佐藤嘉洋, 牧野高紘, 大島武, 奥村元
- Journal Title
  
  シリコンテクノロジー（応用物理学会分科会）
  
  Volume: 161 Pages: 98-102
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] SiC MOS interface states: difference between Si face and C face2013
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Pages: 55-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrical detection of Tv2a-type VSi centres in SiC-MOSFET2021
- Author(s)
  Y. Abe, A. Chaen, M. Sometani, S. Harada, Y. Yamazaki, T. Ohshima, T. Umeda
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: An EDMR study2019
- Author(s)
  T. Umeda, T. Kobayashi, Y. Matsushita, E. Higa, H. Yano, M. Sometani, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Identifications of major and minor interface defects at C-face 4H-SiC/SiO2 interfaces with wet oxidation2019
- Author(s)
  T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] C面窒化4H-SiC/SiO2界面の電流検出型電子スピン共鳴分光2019
- Author(s)
  成ケ澤雅人，比嘉栄斗，染谷満，畠山哲夫，原田信介，梅田享英
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO2 interfaces2019
- Author(s)
  E. Higa, M. Sometani, S. Harada, H. Yano, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Carbon Pb center (the PbC center) at 4H-SiC(0001)/SiO2 interface2019
- Author(s)
  T. Umeda, Y. Nakano, E. Higa, H. Yano, M. Sometani, S. Harada
- Organizer
  30th International Conference on Defects in Semiconductors (ICDS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] C面４H-SiCウェット酸化の特殊性と界面欠陥：EDMR分光からの知見2019
- Author(s)
  梅田享英，鹿児山陽平，富田和輝，阿部裕太，岡本光央，畠山哲夫，原田信介
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC Si面・a面・m面界面欠陥の電流検出型電子スピン共鳴分光法による評価2019
- Author(s)
  比嘉栄斗，染谷満，原田信介，矢野裕司，梅田享英
- Organizer
  第6回先進パワー半導体分科会講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahigh-temperature oxidation2018
- Author(s)
  T. Umeda, T. Hosoi, T. Okuda, T. Kimoto, M. Sometani, S. Harada, H. Watanabe
- Organizer
  European Conference on Silicon Carbide and Related Materials 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC(0001)/SiO2界面の炭素ダングリングボンド欠陥（PbCセンター）2018
- Author(s)
  梅田享英、神成田亘平、奥田貴史、木本暢恒、染谷満、原田信介
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 15NOポストアニール後の4H-SiC MOS界面の窒素ドーピングのESR定量2018
- Author(s)
  梅田享英，染谷満，原田信介
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 電流検出型電子スピン共鳴による(000-1)4H-SiC/SiO2界面炭素ダングリングボンドの検出2018
- Author(s)
  鹿児山陽平、梅田享英、染谷満、原田信介、畠山哲夫
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Oxidation-process dependence of single photon sources embedded in 4H-SiC MOSFETs2017
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Interface defects related to threshold-voltage shift in C-face 4H-SiC MOSFETs: An EDMR study2017
- Author(s)
  T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
- Organizer
  232nd Electrochemical Society Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英、阿部裕太、Y.-W. Zhu、岡本光央、小杉亮治、原田信介、春山盛善、小野田忍、大島武
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016
- Author(s)
  梅田享英、鹿児山陽平、奥田貴史、須田淳、木本暢恒、小杉亮治、岡本光央、原田信介
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Microscopic difference between dry and wet oxidations of C-face 4H-SiC MOSFFETs studied by electrically detected magnetic resonance2015
- Author(s)
  Y. Kagoyama, M. Okamoto, S. Harada, R. Arai, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrically Detected Magnetic Resonance Study on Interface Defects Responsible forThreshold‐Voltage Shift in C‐face 4H‐SiC MOSFETs2015
- Author(s)
  T. Umeda, R. Arai, S.J. Ma, G.W. Kim, M. Okamoto, H. Yoshioka, S. Harada, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015
- Author(s)
  T. Umeda, R. Arai, M. Okamoto, R. Kosugi, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 電流検出ESRによる C面4H-SiC MOSFET界面欠陥からの水素脱離の観察
- Author(s)
  荒井亮、梅田享英、佐藤嘉洋、岡本光央、原田信介、小杉亮治、奥村元、牧野高紘、大島武
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学、京都府
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrically Detected Magnetic Resonance (EDMR) Study on Interface Defects in C-face 4H-SiC Metal-Oxide-Semi-conductor Field Effect Transistors
- Author(s)
  G.W. Kim, S.J. Ma, R. Arai, M. Okamoto, S. Harada, T. Makino, T. Ohshima, T. Umeda
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance
- Author(s)
  T. Umeda, Y. Sato, R. Kosugi, M. Okamoto), S. Harada, H. Okumura
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] SiC MOS interface states: difference between Si face and C face
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 水素リッチウェット再酸化によって作製された4H-SiC(000-1)面上MOSFET
- Author(s)
  岡本光央、巻渕陽一、荒岡幹、宮里真樹、須ケ原紀之　、堤岳志、大西泰彦、木村浩、原田信介、福田憲司、大月章弘、奥村元
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館、埼玉県
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定
- Author(s)
  鹿児山陽平、岡本光央、小杉亮治、原田信介、牧野高紘、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Defects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance
- Author(s)
  Y. Kagoyama, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, T. Makino, T. Ohshima
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Improvement of channel mobility in 4H-SiC C-face MOSFETs by H2 rich wet re-oxidation
- Author(s)
  M. Okamoto, Y. Makibuchi, M. Araoka, M. Miyazato, N. Sugahara, T. Tsutsumi, Y. Ohnishi, H. Kimura, S. Harada, K. Fukuda, A. Ohtsuki, H. Okumura
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054

1. Fujinoki Takahide (10361354)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. OKAMOTO Mitsuo (60450665)

# of Collaborated Projects: 2 results

# of Collaborated Products: 27 results
3. KOSUGI Ryouji (10356991)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
4. 岩室憲幸 (50581203)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 矢野裕司 (40335485)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 牧野俊晴 (20360258)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 五十嵐信行 (40771100)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 磯谷順一 (60011756)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 松下雄一郎 (90762336)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. ONO Takahisa

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
12. 梅田享英

# of Collaborated Projects: 0 results

# of Collaborated Products: 38 results
13. 大島武

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Harada Shinsuke 原田 信介

原田 信介 ハラダ シンスケ

HARADA Shinsuke 原田 信介

Research Projects

Research Products

Co-Researchers

Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETs

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

ワイドギャップ半導体MOS界面欠陥の正体の横断的解明

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfaces

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Electrical detection of <i>T</i><sub>V2a</sub>-type silicon vacancy spin defect in 4H-SiC MOSFETs2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 )/ SiO2 interfaces with wet oxidation2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces2020

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface2020

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4HSiC(0001)/SiO2 interfaces2020

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Anomalous carbon clusters in 4H-SiC/SiO2 interfaces2019

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Interface defects in C-face 4H-SiC MOSFETs: An electrically-detected-magnetic-resonance study2017

Author(s)

Journal Title

DOI

Harada Shinsuke 原田信介

原田信介ハラダシンスケ

HARADA Shinsuke 原田信介